CN109659413A - A kind of light-emitting diode chip for backlight unit and preparation method thereof - Google Patents
A kind of light-emitting diode chip for backlight unit and preparation method thereof Download PDFInfo
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- CN109659413A CN109659413A CN201811618503.XA CN201811618503A CN109659413A CN 109659413 A CN109659413 A CN 109659413A CN 201811618503 A CN201811618503 A CN 201811618503A CN 109659413 A CN109659413 A CN 109659413A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses a kind of light-emitting diode chip for backlight unit and preparation method thereof, belong to technical field of semiconductors.Light-emitting diode chip for backlight unit includes substrate, n type semiconductor layer, active layer, p type semiconductor layer, N-type electrode, P-type electrode and graphene extend item, on the partial region for the first surface that substrate is arranged in graphene extension item, n type semiconductor layer is laid on the region of graphene extension item and the not set graphene extension item of first surface, active layer and p type semiconductor layer are sequentially laminated on n type semiconductor layer, p type semiconductor layer is equipped with the groove for extending to graphene extension item, N-type electrode is arranged on the extension item of the graphene in groove, P-type electrode is arranged on p type semiconductor layer.The present invention replaces the finger part of N-type electrode that electric current is uniformly injected into n type semiconductor layer by using graphene extension item, can effectively promote the light emission luminance of LED chip.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of light-emitting diode chip for backlight unit and preparation method thereof.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.Chip is the core component of LED.
Existing LED chip includes substrate, n type semiconductor layer, active layer, p type semiconductor layer, P-type electrode and N-type electricity
Pole, N-type electrode and P-type electrode include pad portion and finger part.Wherein, pad portion realizes the injection of electric current.Finger
Partial one end is connect with pad portion, and the other end of finger part extends to the direction far from pad portion, so that electric current is equal
Even injection n type semiconductor layer or p type semiconductor layer.
Specifically, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate, the pad of P-type electrode
Part and finger part are arranged on p type semiconductor layer；P type semiconductor layer is equipped with the groove for extending to n type semiconductor layer,
The pad portion of N-type electrode is arranged on the n type semiconductor layer in groove.If the finger part of N-type electrode is also disposed at recessed
On n type semiconductor layer in slot, then the region that groove occupies is larger, and the light-emitting area of active layer is accordingly smaller, the light of sending
Less, the light emission luminance of LED chip is lower；If the finger part of N-type electrode is arranged by insulating layer in p type semiconductor layer
On, and be connected to using several spaced through-holes with n type semiconductor layer, then the finger part of N-type electrode can be blocked and be absorbed
The light that active layer issues still can reduce the light projected from LED chip, reduce the light emission luminance of LED chip.
Summary of the invention
The embodiment of the invention provides a kind of light-emitting diode chip for backlight unit and preparation method thereof, are able to solve prior art N-type
The finger part of electrode promote electric current be uniformly injected into n type semiconductor layer while, cause LED chip project light reduce,
The problem of light emission luminance reduces.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of light-emitting diode chip for backlight unit, the light-emitting diode chip for backlight unit includes lining
Bottom, n type semiconductor layer, active layer, p type semiconductor layer, N-type electrode, P-type electrode and graphene extend item, and the graphene expands
On the partial region for the first surface that the substrate is arranged in exhibition item, the n type semiconductor layer is laid on the graphene extension
On the region of item and the not set graphene extension item of the first surface, the active layer and the p type semiconductor layer according to
Secondary to be layered on the n type semiconductor layer, the p type semiconductor layer is equipped with the groove for extending to the graphene extension item,
On the graphene extension item of the N-type electrode setting in the groove, the P-type electrode is arranged in the p type semiconductor layer
On.
Optionally, graphene extension item with a thickness of 1nm~500nm.
Optionally, the P-type electrode includes pad portion, and the graphene extends item from the N-type electrode to the weldering
Disc portion extends.
Preferably, the graphene extension item is located on the plane of symmetry of the light-emitting diode chip for backlight unit.
Further, the P-type electrode further includes two finger parts connecting respectively with the pad portion, Mei Gesuo
It states finger part to extend from the pad portion to the N-type electrode, two finger parts are on the first surface
Projection is located at the two sides of the projection of the graphene extension item on the first surface.
Optionally, two finger parts are parallel with graphene extension item.
Preferably, two finger parts are equal with the distance between graphene extension item.
It is highly preferred that the finger part and graphene extension the distance between item for the graphene extend item with
The 1/10~10/11 of the distance between the edge of the light-emitting diode chip for backlight unit.
Preferably, length of the graphene extension item on the extending direction perpendicular to graphene extension item is 5 μ
M~50 μm.
On the other hand, the embodiment of the invention provides a kind of production method of light-emitting diode chip for backlight unit, the production methods
Include:
Graphene is set on the partial region of the first surface of substrate and extends item；
It is successively given birth on the region that the graphene extends item and the not set graphene extension item of the first surface
Long n type semiconductor layer, active layer and p type semiconductor layer；
The groove for extending to the graphene extension item is opened up on the p type semiconductor layer；
N-type electrode is set on graphene extension item in the groove, p-type electricity is set on the p type semiconductor layer
Pole.
Technical solution provided in an embodiment of the present invention has the benefit that
Replace the finger part of N-type electrode that electric current is uniformly injected into n type semiconductor layer by using graphene extension item,
Since graphene has very high carrier mobility, being uniformly injected into for electric current may be implemented completely.Again due to graphene
The thickness of extension item can achieve very thin, therefore graphene can first be arranged on the partial region of substrate and extend item, then in stone
N type semiconductor layer, active layer and p type semiconductor layer, i.e. graphene are successively laid on other regions of black alkene extension item and substrate
Extension item can be arranged directly on the growth between substrate and n type semiconductor layer without influencing whether subsequent epitaxial material.And stone
Black alkene extension item is set up directly between substrate and n type semiconductor layer, neither occupies the setting area of active layer, causes active
The light that layer issues is reduced, and will not block and absorb the light of active layer sending, therefore can effectively promote the hair of LED chip
Brightness.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of main view of light-emitting diode chip for backlight unit provided in an embodiment of the present invention；
Fig. 2 is a kind of top view of light-emitting diode chip for backlight unit provided in an embodiment of the present invention；
Fig. 3 is a kind of flow chart of the production method of light-emitting diode chip for backlight unit provided in an embodiment of the present invention；
Fig. 4 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 201 execution
Main view；
Fig. 5 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 201 execution
Top view；
Fig. 6 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 202 execution
Main view；
Fig. 7 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 202 execution
Top view；
Fig. 8 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 203 execution
Main view；
Fig. 9 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 203 execution
Top view；
Figure 10 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 204 execution
Main view；
Figure 11 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 204 execution
Top view.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of light-emitting diode chip for backlight unit.Fig. 1 is provided in an embodiment of the present invention a kind of luminous
The main view of diode chip for backlight unit, Fig. 2 are a kind of top view of light-emitting diode chip for backlight unit provided in an embodiment of the present invention.Referring to Fig. 1
And Fig. 2, the light-emitting diode chip for backlight unit include substrate 10, n type semiconductor layer 21, active layer 22, p type semiconductor layer 23, N-type electrode
31, P-type electrode 32 and graphene extend item 40.The partial region of the first surface of substrate 10 is arranged in graphene extension item 40
On, n type semiconductor layer 21 is laid on the region of graphene extension item 40 and the not set graphene extension item 40 of first surface, is had
Active layer 22 and p type semiconductor layer 23 are sequentially laminated on n type semiconductor layer 21, and p type semiconductor layer 23 is equipped with and extends to graphene
The groove 100 of item 40 is extended, N-type electrode 31 is arranged on the extension item 40 of the graphene in groove 100, and P-type electrode 32 is arranged in P
In type semiconductor layer 23.
It should be noted that in specific implementation, since graphene extension item is equipped with n type semiconductor layer or N-type electricity
Pole, therefore can not see that graphene extends item on the top view of LED chip, but Fig. 2 provided in an embodiment of the present invention is in order to aobvious
Show the relationship between graphene extension item and N-type electrode, p-type, adopts and graphene extension item is represented by dashed line in the front of LED chip
On projection.
The embodiment of the present invention replaces the finger part of N-type electrode that electric current is uniformly injected into N by using graphene extension item
In type semiconductor layer, since graphene has very high carrier mobility, being uniformly injected into for electric current may be implemented completely.
Again due to graphene extension item thickness can achieve it is very thin, can first on the partial region of substrate be arranged graphene expand
Item is opened up, then is successively laid with n type semiconductor layer, active layer and P-type semiconductor on other regions that graphene extends item and substrate
Layer, i.e. graphene extension item can be arranged directly between substrate and n type semiconductor layer without influencing whether subsequent epitaxial material
Growth.And graphene extension item is set up directly between substrate and n type semiconductor layer, neither occupies the setting area of active layer
Domain, the light for causing active layer to issue are reduced, and will not block and absorb the light of active layer sending, therefore can effectively be promoted
The light emission luminance of LED chip.
In practical applications, the size of N-type electrode is generally larger than the width of graphene extension item, therefore also can in groove
It extends on the n type semiconductor layer or substrate of the not set graphene extension item in part, N-type electrode is arranged in groove simultaneously
On n type semiconductor layer (or substrate) and graphene extension item.
Further, the annular groove that n type semiconductor layer is extended to from p type semiconductor layer, N can be set on the side wall of groove
Type electrode is arranged simultaneously on the graphene extension layer in n type semiconductor layer and groove in a ring groove, is conducive to the cross of electric current
To transmission, the voltage of LED chip is reduced.
Optionally, as shown in Figure 1, the thickness d of graphene extension item 40 can be 1nm~500nm, such as 250nm.Pass through limit
The thickness for determining graphene extension item reduces to subsequently epitaxial growing as far as possible in the case where effectively realizing that electric current is uniformly injected into
Influence.
Optionally, as shown in Fig. 2, P-type electrode 32 may include pad portion 32a, graphene extends item 40 can be from N-type
Electrode 31 extends to pad portion 32a, is conducive to being uniformly injected into for electric current.
In specific implementation, as shown in Fig. 2, the projection of pad portion 32a on the first surface and graphene extend item 40
There is no overlapping region between projection on the first surface, directly can longitudinally be transmitted to avoid electric current, is conducive to electric current and carries out cross
To extension.
Preferably, as shown in Fig. 2, graphene extends length of the item 40 on the extending direction perpendicular to graphene extension item 40
Spending w1 can be 5 μm~50 μm, such as 25 μm.The width that item is extended by limiting graphene is effectively realizing that electric current is uniformly injected into
In the case where, reduce the influence to subsequently epitaxial growing as far as possible.
Preferably, as shown in Fig. 2, graphene extension item 40 can be located on the plane of symmetry of the light-emitting diode chip for backlight unit, have
Conducive to being uniformly injected into for electric current.
Further, as shown in Fig. 2, P-type electrode 32 can also include two fingers connecting respectively with pad portion 32a
Part 32b, each finger part 32b extend from pad portion 32a to N-type electrode 31, and two finger part 32b are in first surface
On projection be located at the two sides of graphene extension item 40 projection on the first surface, promote electric current be uniformly injected into and it is horizontal
To extension.
Preferably, as shown in Fig. 2, length w2 of the finger part 32b on the extending direction perpendicular to finger part 32b can
Think 1 μm~100 μm, such as 50 μm.By limiting the width of finger part, in the case where effectively realizing that electric current is uniformly injected into,
Avoid blocking and absorbing the light of active layer sending as far as possible.
Optionally, as shown in Fig. 2, two finger part 32b can be parallel with graphene extension item 40, be conducive to electric current
It is uniformly injected into.
Preferably, as shown in Fig. 2, the distance between two finger part 32b and graphene extension item 40 can be equal, have
Conducive to being uniformly injected into for electric current.
It is highly preferred that the distance between finger part 32b and graphene extension item 40 s1 can extend item 40 for graphene
The 1/10~10/11 of the distance between the edge of light-emitting diode chip for backlight unit s2, such as 1/2.By limiting finger part in stone
Positional relationship between black alkene extension item and LED chip edge, not only improves the extending transversely of electric current, is conducive to the uniform of electric current
Injection.
Specifically, the distance between edge of finger part 32b and light-emitting diode chip for backlight unit s3 can be 10 μm~200
μm, such as 100 μm, realize that effect is good.
Specifically, the material of substrate 10 can be using one in sapphire, silicon, gallium nitride, silicon nitride, silicon carbide, glass
Kind, such as plain film Sapphire Substrate or graphical sapphire substrate (English: PatternedSapphire Substrate, letter
Claim: PSS).The material of n type semiconductor layer 21 can use the gallium nitride (GaN) of n-type doping (such as silicon).Active layer 22 can wrap
It includes multiple Quantum Well and multiple quantum is built, multiple Quantum Well and multiple quantum build alternately laminated setting；The material of Quantum Well can be with
Using InGaN (InGaN), the material that quantum is built can use gallium nitride.The material of p type semiconductor layer 23 can use p-type
Adulterate the gallium nitride of (such as magnesium).The material of N-type electrode 31 and P-type electrode 32 can use gold (Au), aluminium (Al), nickel (Ni), platinum
(Pt), one of chromium (Cr), titanium (Ti) or a variety of.
Further, the thickness of n type semiconductor layer 21 can be 1 μm~5 μm, preferably 3 μm；N in n type semiconductor layer 21
The doping concentration of type dopant can be 1018/cm3~1019/cm3, preferably 5*1018/cm3.The thickness of Quantum Well can be
2.5nm~3.5nm, preferably 3nm；The thickness that quantum is built can be 9nm~20nm, preferably 15nm；The quantity of Quantum Well with
The quantity that quantum is built is identical, and the quantity that quantum is built can be 5~15, preferably 10.The thickness of p type semiconductor layer 23 can
Think 100nm~800nm, preferably 450nm；The doping concentration of P-type dopant can be 10 in p type semiconductor layer 2318/cm3
~1020/cm3, preferably 1019/cm3。
Optionally, which can also include buffer layer, and buffer layer is arranged in substrate and n type semiconductor layer
Between, nuclearing centre is provided for epitaxial growth.
Specifically, the material of buffer layer uses aluminium nitride or aluminium gallium nitride alloy, such as AlxGa1-xN, 0 < x < 1, can alleviate
Lattice mismatch between substrate material and epitaxial material.
Further, buffer layer with a thickness of 0.5nm~5 μm, such as 2.5 μm.
Optionally, which can also include transparency conducting layer, and transparency conducting layer is arranged in P-type semiconductor
Between layer and P-type electrode.It is better than p type semiconductor layer using the ability extending transversely of transparency conducting layer, promotes P-type electrode injection
Electric current carries out extending transversely.
Specifically, the material of transparency conducting layer can using tin indium oxide (English: Indium tin oxide, referred to as:
ITO), one of zinc oxide (ZnO), zinc-tin oxide (ZTO), ZnO transparent conductive glass (GZO) of gallium doping.
Preferably, which can also include current barrier layer, and current barrier layer is arranged in P-type semiconductor
Between layer and transparency conducting layer, carry out the electric current of P-type electrode injection first in the transparent conductive layer extending transversely, then longitudinal injection
In p type semiconductor layer, to promote the extending transversely of electric current, the luminous efficiency of chip is improved.
Specifically, the material of current barrier layer can use silica (SiO2), silicon nitride (SiN), titanium dioxide
(TiO2One of).
Optionally, which can also include passivation layer, and passivation layer setting removes p-type in p type semiconductor layer
On region in region and groove except electrode settings area in addition to n type semiconductor layer setting area, to LED core
Piece is protected.
Specifically, the material of passivation layer can use silica (SiO2), silicon nitride (SiN), titanium dioxide (TiO2) in
One kind.
The embodiment of the invention provides a kind of production methods of light-emitting diode chip for backlight unit, are suitable for Fig. 1 and hair shown in Fig. 2
Luminous diode chip.Fig. 3 is a kind of flow chart of the production method of light-emitting diode chip for backlight unit provided in an embodiment of the present invention.Referring to
Fig. 3, the production method include:
Step 201: graphene being set on the partial region of the first surface of substrate and extends item.
Fig. 4 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 201 execution
Main view, Fig. 5 is production method provided in an embodiment of the present invention light-emitting diode chip for backlight unit for being formed after step 201 execution
Top view.Wherein, 10 substrate is indicated, 40 indicate that graphene extends item.It extends the setting of item 40 with Fig. 5, graphene referring to fig. 4 and exists
On the partial region on one surface of substrate 10.
Specifically, which may include:
Using plasma enhancing chemical vapour deposition technique is laid with graphene on the first surface of substrate；
The photoresist of certain figure is formed on graphene using photoetching technique, photoresist setting extends item institute in graphene
On region；
Dry etching does not have the graphene of photoresist overlay, and the graphene left forms graphene extension item；
Remove photoresist.
In specific implementation, the photoresist that certain figure is formed using photoetching technique may include:
It is laid with a layer photoresist；
Photoresist is exposed by the mask plate of certain figure；
Photoresist after exposure is impregnated in developer solution, part photoresist is dissolved, the photoresist left is schemed needed for being
The photoresist of shape.
Optionally, when the light-emitting diode chip for backlight unit further includes buffer layer, then buffer layer is first formed on the substrate, then slow
It rushes on layer and graphene extension item is set.Specifically, buffer layer can using metallo-organic compound chemical gaseous phase deposition (English:
Metal Organic Chemical Vapor Deposition, referred to as: MOCVD) technology growth forms, object can also be used
Physical vapor deposition (English: Physical Vapor Deposition, abbreviation: PVD) technology deposits.
Step 202: successively growing N-type on the region that graphene extends item and the not set graphene extension item of first surface
Semiconductor layer, active layer and p type semiconductor layer.
Fig. 6 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 202 execution
Main view, Fig. 7 is production method provided in an embodiment of the present invention light-emitting diode chip for backlight unit for being formed after step 202 execution
Top view.Wherein, 21 n type semiconductor layer is indicated, 22 indicate active layer, and 23 indicate p type semiconductor layer.Referring to Fig. 6 and Fig. 7, N
Type semiconductor layer 21, active layer 22 and p type semiconductor layer 23 are successively laid on other areas of graphene extension item 40 and substrate 10
On domain.
Specifically, which may include:
Using metallo-organic compound chemical gaseous phase deposition (English: Metal Organic Chemical
VaporDeposition, referred to as: MOCVD) technology extends item in graphene and the not set graphene of first surface extends the area of item
N type semiconductor layer, active layer and p type semiconductor layer are successively grown on domain.
Step 203: the groove for extending to graphene extension item is opened up on p type semiconductor layer.
Fig. 8 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 203 execution
Main view, Fig. 9 is production method provided in an embodiment of the present invention light-emitting diode chip for backlight unit for being formed after step 203 execution
Top view.Wherein, 100 groove is indicated.Referring to Fig. 8 and Fig. 9, groove 100 extends to graphene extension from p type semiconductor layer 23
Item 40.
Specifically, which may include:
The photoresist of certain figure is formed on p type semiconductor layer using photoetching technique, photoresist is arranged on dielectric layer
On region in addition to groove region；
Dry etching does not have the p type semiconductor layer of photoresist overlay and active layer, forms groove；
Remove photoresist.
It optionally, can be after groove formation, in p-type when the light-emitting diode chip for backlight unit further includes transparency conducting layer
Transparency conducting layer is formed on semiconductor layer；Transparency conducting layer can also be first formed on p type semiconductor layer, then in transparency conducting layer
It is upper to form the groove for extending to n type semiconductor layer.Specifically, the forming process of transparency conducting layer can include: first to be laid with thoroughly
Bright conductive layer recycles photoetching technique and lithographic technique graphical to transparency conducting layer.
Preferably, when the light-emitting diode chip for backlight unit further includes current barrier layer, then electricity is first formed on p type semiconductor layer
Flow barrier, then transparency conducting layer is formed on current barrier layer and p type semiconductor layer.Specifically, the formation of current barrier layer
Process may include: first to be laid with current barrier layer, recycle photoetching technique and lithographic technique graphical to current barrier layer.
Step 204: N-type electrode being set on the graphene extension item in groove, p-type electricity is set on p type semiconductor layer
Pole.
Figure 10 is the light-emitting diode chip for backlight unit that production method provided in an embodiment of the present invention is formed after step 204 execution
Main view, Figure 11 is production method provided in an embodiment of the present invention light-emitting diodes tube core for being formed after step 204 execution
The top view of piece.Wherein, 31 N-type electrode is indicated, 32 indicate P-type electrode.Referring to Figure 10 and Figure 11, N-type electrode 31 is arranged recessed
On graphene extension item 40 in slot 100, P-type electrode 32 is arranged on p type semiconductor layer 23.
Optionally, which may include:
Using removing P on region of the photoetching technique in groove in addition to N-type electrode region and p type semiconductor layer
Photoresist is formed on region except type electrode region；
Electrode material is laid on photoresist, graphene extension item and p type semiconductor layer；
The electrode material on photoresist and photoresist is removed, graphene extends the electrode material on item and forms N-type electrode, P
Electrode material in type semiconductor layer forms P-type electrode.
Optionally, when the light-emitting diode chip for backlight unit further includes passivation layer, then after N-type electrode and P-type electrode are formed,
In region of the p type semiconductor layer in addition to P-type electrode setting area and groove in addition to n type semiconductor layer setting area
Region on form passivation layer.Specifically, the forming process of passivation layer may include: first to be laid with passivation layer, recycle photoetching skill
Art and lithographic technique are graphical to passivation layer.
It should be noted that using photoetching technique and lithographic technique to certain layer (transparency conducting layer, current barrier layer or blunt
Change layer) patterned process can be similar with the forming process of groove, therefore is no longer described in detail one by one.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of light-emitting diode chip for backlight unit, which is characterized in that the light-emitting diode chip for backlight unit includes substrate, n type semiconductor layer, has
Active layer, p type semiconductor layer, N-type electrode, P-type electrode and graphene extend item, and the graphene extension item is arranged in the substrate
First surface partial region on, the n type semiconductor layer is laid on graphene extension item and the first surface not
It is arranged on the region of the graphene extension item, the active layer and the p type semiconductor layer are sequentially laminated on the N-type and partly lead
On body layer, the p type semiconductor layer is equipped with the groove for extending to the graphene extension item, and the N-type electrode is arranged in institute
It states on the graphene extension item in groove, the P-type electrode is arranged on the p type semiconductor layer.
2. light-emitting diode chip for backlight unit according to claim 1, which is characterized in that graphene extension item with a thickness of
1nm~500nm.
3. light-emitting diode chip for backlight unit according to claim 1 or 2, which is characterized in that the P-type electrode includes welding disk
Point, the graphene extension item extends from the N-type electrode to the pad portion.
4. light-emitting diode chip for backlight unit according to claim 3, which is characterized in that the graphene extension item is located at the hair
On the plane of symmetry of luminous diode chip.
5. light-emitting diode chip for backlight unit according to claim 4, which is characterized in that the P-type electrode further includes two difference
The finger part connecting with the pad portion, each finger part extend from the pad portion to the N-type electrode,
The projection of two finger parts on the first surface is located at the graphene extension item in the first surface
On projection two sides.
6. light-emitting diode chip for backlight unit according to claim 5, which is characterized in that two finger parts and the graphite
It is parallel that alkene extends item.
7. light-emitting diode chip for backlight unit according to claim 6, which is characterized in that two finger parts and the graphite
It is equal that alkene extends the distance between item.
8. light-emitting diode chip for backlight unit according to claim 7, which is characterized in that the finger part and the graphene expand
The 1/10 of the distance between the distance between exhibition item edge for extending item and the light-emitting diode chip for backlight unit for the graphene~
10/11。
9. light-emitting diode chip for backlight unit according to claim 3, which is characterized in that the graphene extension item is perpendicular to institute
Stating the length on the extending direction of graphene extension item is 5 μm~50 μm.
10. a kind of production method of light-emitting diode chip for backlight unit, which is characterized in that the production method includes:
Graphene is set on the partial region of the first surface of substrate and extends item；
N-type is successively grown on the region that the graphene extends item and the not set graphene extension item of the first surface
Semiconductor layer, active layer and p type semiconductor layer；
The groove for extending to the graphene extension item is opened up on the p type semiconductor layer；
N-type electrode is set on graphene extension item in the groove, P-type electrode is set on the p type semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112103305A (en) * | 2020-09-21 | 2020-12-18 | 中国科学院长春光学精密机械与物理研究所 | Micro-LED array based on Micro-patterned graphene, preparation method of Micro-LED array and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456856A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Inversion LED chip and ohmic contact electrode structure of inversion LED chip |
| CN104538523A (en) * | 2015-01-09 | 2015-04-22 | 南京大学 | Semiconductor device for improving current expanding |
| CN108538982A (en) * | 2018-06-21 | 2018-09-14 | 河北工业大学 | A kind of chip epitaxial structure of low-resistance LED and preparation method thereof |
-
2018
- 2018-12-28 CN CN201811618503.XA patent/CN109659413A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456856A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Inversion LED chip and ohmic contact electrode structure of inversion LED chip |
| CN104538523A (en) * | 2015-01-09 | 2015-04-22 | 南京大学 | Semiconductor device for improving current expanding |
| CN108538982A (en) * | 2018-06-21 | 2018-09-14 | 河北工业大学 | A kind of chip epitaxial structure of low-resistance LED and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112103305A (en) * | 2020-09-21 | 2020-12-18 | 中国科学院长春光学精密机械与物理研究所 | Micro-LED array based on Micro-patterned graphene, preparation method of Micro-LED array and display device |
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Application publication date: 20190419 |