CN113871519B - Light-emitting diode and manufacturing method thereof - Google Patents
Light-emitting diode and manufacturing method thereof Download PDFInfo
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- CN113871519B CN113871519B CN202111165751.5A CN202111165751A CN113871519B CN 113871519 B CN113871519 B CN 113871519B CN 202111165751 A CN202111165751 A CN 202111165751A CN 113871519 B CN113871519 B CN 113871519B
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 121
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000003475 lamination Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 16
- 230000000873 masking effect Effects 0.000 claims description 4
- 238000000605 extraction Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 100
- 230000000694 effects Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Abstract
The invention belongs to the field of semiconductors, and particularly relates to a light-emitting diode, which comprises a substrate and a semiconductor lamination, wherein the semiconductor lamination comprises a first semiconductor layer, a second semiconductor layer, an active layer, a first electrode and a second electrode, wherein the active layer is clamped between the first semiconductor layer and the second semiconductor layer, the first electrode and the second electrode are respectively electrically connected with the first semiconductor layer and the second semiconductor layer, and at least the first electrode comprises a bonding pad part and an extension part. The invention can increase the whole reflection area of the light-emitting diode, avoid the problem that the extension part shields the light, and improve the light extraction efficiency of the light-emitting diode.
Description
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to a light-emitting diode and a manufacturing method thereof.
Background
The Light-Emitting Diode (LED) has the characteristics of energy saving, environmental protection, safety, durability, high photoelectric conversion rate, strong controllability and the like, and is widely applied to the related fields of displays, automobile illumination, general illumination backlight sources and the like.
The light extraction efficiency is an important index for evaluating the quality of the light emitting diode. In the prior art, a forward scribing process is generally adopted, and a high-temperature side wall corrosion process is matched, so that a certain angle is corroded on the side wall of the epitaxial layer of the light-emitting diode, the original side surface light is reflected to the front surface, and the light-emitting efficiency is improved. However, the side wall corrosion morphology and the light-emitting area are blocked by the first electrode, and the side light cannot be reflected to the front surface, so that the brightening process is ineffective.
Therefore, how to improve the light extraction efficiency of the light emitting diode is always a problem to be solved.
Disclosure of Invention
In order to solve the technical problems, the specific technical scheme is as follows:
according to a first aspect of the present invention, there is provided a light emitting diode comprising a substrate and a semiconductor stack, the semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, and a first electrode and a second electrode electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, at least the first electrode comprising a pad portion and an extension portion, characterized in that under the extension portion there are support structures arranged at intervals, a first recess is arranged between adjacent support structures, and the bottom of the first recess exposes the substrate.
Preferably, an included angle a is formed between the substrate and the inner wall of the first groove facing the active layer, so as to form a reflecting surface.
Preferably, the side wall of the semiconductor lamination is an inclined side wall and forms an included angle A with the substrate so as to form a reflecting surface.
Preferably, the included angle a is greater than 0 degrees and less than 90 degrees.
Preferably, the extension portion extends along the top surface, the side wall, and the upper surface of the substrate of the support structure.
Preferably, the extension portion is disposed on the support structure and suspended above the substrate.
Preferably, the side surface of the support structure along the direction of the extension part of the first electrode is an inclined side surface, and an included angle B is formed between the side surface and the substrate.
Preferably, the included angle B is greater than 90 degrees and less than 180 degrees.
Preferably, the support structure has a length of at least 3 μm.
Preferably, the length of the support structure is gradually reduced or gradually increased from the pad part to the end of the extension part or the same length.
Preferably, the length of the first groove is gradually reduced or gradually increased from the pad part to the end of the extension part or the same length.
Preferably, a second groove is provided in a region of the first semiconductor layer located between the pad portion of the first electrode and the active layer.
Preferably, the bottom of the second groove exposes the substrate.
Preferably, the second grooves are arc-shaped or block-shaped and are continuously or discretely arranged.
Preferably, the distance from the reflecting surface to the active layer is 0-25 μm.
The second aspect of the present invention provides a method for manufacturing the light emitting diode, at least comprising the following steps:
s1, providing a substrate;
s2: growing a semiconductor stack on the substrate, the semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer;
s3: manufacturing a first electrode and a second electrode, wherein the first electrode is electrically connected with the first semiconductor layer, and the second electrode is electrically connected with the second semiconductor layer, and at least the first electrode comprises a bonding pad part and an extension part;
the substrate processing device is characterized in that supporting structures are arranged below the extension parts at intervals, first grooves are arranged between adjacent supporting structures, and the bottoms of the first grooves are exposed out of the substrate.
Preferably, the first groove is formed by means of a photomask and etching, and has an inclined inner wall.
Preferably, the first semiconductor layer between the pad part and the active layer is removed by means of a photomask and etching while the first groove is formed, to form a second groove having inclined inner walls.
Preferably, the semiconductor stack having the inclined surface is formed by means of a photomask and etching.
The invention can effectively avoid the problem that the first electrode shields the light and improve the light extraction efficiency of the light-emitting diode by manufacturing the inclined reflecting surface between the first electrode and the active layer and at the side surface of the semiconductor lamination, thereby increasing the whole reflecting area of the light-emitting diode.
Drawings
FIG. 1 is a schematic top view of a prior art LED;
FIG. 2 is a schematic top view of a first LED according to an embodiment of the present invention;
FIG. 3 is a schematic view of the cross-sectional structure of line H-H' of one of FIG. 2 provided by the present invention;
FIG. 4 is an enlarged view at G of FIG. 2 provided by the present invention;
FIG. 5 is a schematic top view of a second LED according to an embodiment of the present invention;
FIG. 6 is a schematic top view of a third LED according to an embodiment of the present invention;
FIG. 7 is a schematic top view of a fourth LED according to an embodiment of the present invention;
FIG. 8 is a schematic view of a cross-sectional structure of the line H-H' of FIG. 2 according to another embodiment of the present invention;
FIG. 9 is a schematic top view of a fifth LED according to an embodiment of the present invention;
fig. 10 is a schematic top view of a sixth light emitting diode according to an embodiment of the present invention.
Detailed Description
The following embodiments will illustrate the concepts of the invention with the accompanying drawings, in which like or identical parts are given the same reference numerals, and in which the shapes or thicknesses of the elements may be expanded or contracted. It should be noted that elements not shown in the drawings or described in the specification may be in a form known to those skilled in the art.
In the following embodiments, terms used to indicate directions, such as "upper", "lower", "front", "rear", "left", and "right", refer only to directions in the drawings. Accordingly, the directional terminology is used to illustrate and not limit the invention.
FIG. 1 is a schematic top view of a prior art LED;
referring to fig. 1, a prior art light emitting diode includes a substrate, a semiconductor stack, and an electrode. The semiconductor stack comprises a first semiconductor layer 1, a second semiconductor layer 3 and an active layer 2 sandwiched between the first semiconductor layer 1 and the second semiconductor layer 3. The electrodes include a first electrode 4 and a second electrode 5 electrically connected to the first semiconductor layer 1 and the second semiconductor layer 3, respectively.
In order to improve the light extraction efficiency of the light emitting diode, the prior art adopts a forward scribing process to scribe the semiconductor lamination, and then forms the semiconductor lamination with the side wall having an inclined angle through a high-temperature side wall corrosion process, so that the light emitted from the original side surface is reflected to the front surface, and the light emission efficiency is improved. However, the inclined sidewall 6 of the semiconductor stack formed by the sidewall etching process is far from the active layer 2, and in particular, the inclined sidewall 6 is generally formed at the outer periphery of the semiconductor stack. Since the inclined sidewall 6 is formed on the periphery of the semiconductor stack, the first electrode 4 is disposed between the inclined sidewall 6 and the active layer, and the first electrode 4 can block and absorb the lateral light emitted from the active layer 2, so that the inclined sidewall 6 cannot reflect the original lateral light into forward light, which makes the lighting process ineffective, and further affects the light emitting efficiency of the light emitting diode.
Accordingly, the present invention is directed to the above-mentioned problems, and an led having improved light extraction efficiency is designed and proposed.
Example 1
Referring to fig. 2 and 3, a light emitting diode according to an embodiment of the present invention includes a substrate 10 and a semiconductor stack including a first semiconductor layer 20, a second semiconductor layer 40, an active layer 30 interposed between the first semiconductor layer 20 and the second semiconductor layer 40, and a first electrode 21 and a second electrode 41 electrically connected to the first semiconductor layer 20 and the second semiconductor layer 40, respectively.
Specifically, the substrate 10 of the present embodiment is made of Al 2 O 3 Any one or a combination of a plurality of SiC, gaAs, gaN, alN, gaP, si, znO, mnO. This practice isEmbodiments are preferably sapphire substrates, which may also be Patterned Sapphire Substrates (PSS) to alter the propagation path of light to improve the light extraction efficiency of the light emitting diode.
Both the first semiconductor layer 20 and the second semiconductor layer 40 may be formed of a multi-layered III-V compound semiconductor layer, which may be a single-layer structure or a multi-layer structure, may be p-type doped or n-type doped, may be p-type doped with an impurity type of Mg, zn, ca, sr, or Ba, and may be n-type doped with Si, ge, or Sn, without excluding other element equivalent substitution doping. When the first semiconductor layer 20 is n-doped, the second semiconductor layer 40 is p-doped; in contrast, when the first semiconductor layer 20 is p-type doped, the second semiconductor layer 40 is n-type doped.
The active layer 30 is interposed between the first semiconductor layer 20 and the second semiconductor layer 40. Electrons or holes provided by the first semiconductor layer 20 and holes or electrons provided by the second semiconductor layer 40 are recombined in the active layer 30, and light is emitted when the active layer 30 is driven by a voltage. The color of the light depends on the material of the compound semiconductor layer of the active layer 30, and the specific radiation wave band is 390-950 nm, such as blue, green, red, yellow, orange, and infrared light, and the active layer 30 may have a single quantum well or multiple quantum well structure.
Etching part of the second semiconductor layer 40 to the first semiconductor layer 20 to expose the surface of the first semiconductor layer 20, manufacturing a first electrode 21 on the exposed surface of the first semiconductor layer 20, and manufacturing a second electrode 41 on the second semiconductor layer 40, wherein the first electrode 21 and the second electrode 41 are respectively arranged at two sides of the semiconductor lamination. In the present embodiment, in order to increase the current uniformity of the semiconductor stack, the lengths of the first electrode 21 and the second electrode 41 are increased accordingly. Specifically, the first electrode 21 includes a pad portion 211 and an extension portion 212, one end of the extension portion 212 is connected to the pad portion 211, and the other end extends from the pad portion 211 in the direction of the second electrode 41, so that the current of the pad portion 211 is spread along the extension portion 212. Similarly, the second electrode 41 also includes a pad portion and an extension portion, and the extension portion extends from the pad portion thereof in the direction of the first electrode 21. By increasing the areas of the first electrode 21 and the second electrode 41 in the above manner, the current uniformity of the semiconductor layer is improved. Accordingly, in order to fabricate the extension 212 of the first electrode 21, a portion of the semiconductor stack is sacrificed, and the area of the active layer 30 is reduced, but the present embodiment still has the effect of improving the light-emitting brightness compared to the conventional light-emitting diode having the electrode structure without the extension 212.
With continued reference to fig. 3, the present embodiment has support structures 22 disposed at intervals below the extension 212 of the first electrode 21, and first grooves 23 are disposed between adjacent support structures 22, and the bottoms of the first grooves 23 are exposed from the substrate 10. The support structure 22 is in fact part of the first semiconductor layer 20, so as to ensure that the current flowing out of the extension 212 can spread through the support structure 22 to the whole first semiconductor layer 20.
Specifically, the first groove 23 of the present embodiment has four inner walls, wherein the inner wall facing and close to the active layer 30 is made to be inclined, and forms an included angle a with the substrate 10, wherein the angle a is greater than 0 degrees and smaller than 90 degrees, so as to form a reflecting surface 50 for reflecting lateral light, and see fig. 4; the inner wall facing and away from the active layer 30 may be made inclined or not; the remaining opposing inner walls are substantially the sides of the support structure 22.
Further, with continued reference to fig. 3, the extension 212 of the first electrode 21 may extend along the top, side, and upper surface of the support structure 22, i.e., the extension 212 may span planes of different heights. The side of the support structure 22 is the side of the support structure 22 in the direction of the extension 212 of the first electrode 21. Specifically, in the area where the support structure 22 is located, the extension 212 is disposed on the top surface of the support structure 22, and in the area where the first recess 23 is located, the extension 212 is disposed against the upper surface of the substrate 10, and the other extension 212 is disposed along the side surface of the support structure 22 to form a complete extension 212. Through the above structure, under the premise of ensuring that the current is conducted, a part of the extension part 212 is positioned on the surface of the substrate 10, and the whole inner wall of the first groove 23 is positioned above the extension part 212, so that the reflecting surface 50 is positioned above the extension part 212, and compared with the extension part 212, the reflecting surface 50 is closer to the active layer 30, and when the lateral light does not reach the first electrode extension part 212, the lateral light can be directly reflected to the front through the reflecting surface 50 at first, thereby avoiding the shielding and absorption of the extension part 212 of the first electrode 21 on the lateral light, improving the light extraction efficiency and realizing the brightness improvement effect. In other embodiments, the first groove 23 may have three inner walls. Specifically, a portion of the first semiconductor layer 20 facing and away from the outside of the inner wall of the active layer 30 is entirely removed to form a semiconductor device having only three-sided inner walls, see fig. 5 in detail.
Further, with continued reference to fig. 3, the side of the support structure 22 along the extension 212 of the first electrode 21 is an inclined side and forms an angle B with the substrate 10, preferably the angle B is in a range of more than 90 degrees and less than 180 degrees. The included angle between the side surface of the supporting structure 22 and the substrate 10 forms an obtuse angle, so that the situation that the first electrode 21 extends along the top surface, the side surface and the upper surface of the substrate 10 of the supporting structure 22 to cause line breakage can be effectively avoided, and the integrity and the reliability of the arrangement of the extending part 212 are ensured. Regarding the degree of side inclination of the support structure 22, it is possible to adjust by controlling the inclination of the inner wall of the first recess 23.
Regarding the length and number of the first grooves 23 and the support structures 22, they can be adjusted according to the actual situation. Specifically, the longer the first grooves 23, the larger the area of the reflecting surface 50, and the more light rays are reflected from the side light to the front, and similarly, the larger the number of the first grooves 23, the larger the reflecting area. However, based on process capability limitations, the length of the support structure 22 is at least 3 μm, the shorter the length of the support structure 22, the longer the corresponding first groove 23, the larger the area of the reflective surface 50, and similarly, the fewer the number of support structures 22, the longer the corresponding first groove 23, and the larger the area of the reflective surface 50. Further, the lengths of the first grooves 23 or the supporting structures 22 in this embodiment may be the same, so as to facilitate the uniform reflection of the lateral light into the forward light, avoiding the local darkness and forming a relatively obvious contrast. Further, the length of the first groove 23 gradually decreases or gradually increases from the pad portion 211 toward the end of the extension portion 212; the length of the support structure 22 is gradually reduced or gradually increased from the pad portion 211 toward the end of the extension portion 212, and the present embodiment is not particularly limited. In addition, the width of the support structure 22 is at least the same as the width of the extension 212 of the first electrode 21 to ensure a good current spreading.
The sidewalls of the semiconductor stack are sloped sidewalls and form an acute angle a with the substrate 10, with a specific angle a having a degree greater than 0 degrees and less than 90 degrees, to form the reflective surface 50. Further, the distance from the inclined reflecting surface 50 of the semiconductor stack to the active layer 30 in the prior art is shortened, and specifically, the distance from the inclined reflecting surface 50 of the semiconductor stack to the active layer 30 is preferably 0-25 μm, so as to achieve a better reflection effect. The distance from the reflective surface 50 of the first recess 23 to the active layer 30 may also be set to 0-25 μm, see fig. 6 and 7.
Example 2
Referring to fig. 8, the difference between the present embodiment and embodiment 1 is that the extension portion 212 of the first electrode 21 can be disposed on the supporting structure 22 and suspended above the substrate 10. Because the support structure 22 and the bottom of the first groove 23 have a height difference, in the process of manufacturing the extension 212 of the first electrode 21, the extension 212 is not tightly attached to the bottom of the first groove 23, but the side light can be directly reflected to the front through the reflecting surface 50 when the side light does not reach the extension 212 of the first electrode 21, so that the shielding and absorption of the side light are avoided, the light extraction efficiency is improved, and the brightness is improved. In addition, the structure that the extension 212 of the first electrode 21 is disposed on the support structure 22 and suspended above the substrate 10 can be achieved by shortening the interval of the support structure 22, i.e. shortening the length of the first recess 23. In order to increase the area of the reflecting surface 50 as much as possible, the reflection effect is improved by increasing the number of the supporting structures 22 and decreasing the length of the supporting structures 22, thereby forming a greater number of the first grooves 23, so as to achieve the effect of brightness.
Example 3
Referring to fig. 9 and 10, the present embodiment is different from embodiments 1 and 2 in that a second groove 60 is provided in a region of the first semiconductor layer 20 located between the pad portion 211 of the first electrode 21 and the active layer 30. The bottom of the second groove 60 exposes the substrate 10, and is inclined towards the inner wall of the active layer 30, and its specific structure is the same as that of the first groove 23, so that the area of the reflecting surface 50 is further increased, which is more beneficial to reflecting the side light to the front light, and further improving the light extraction rate. Further, the second grooves 60 are arc-shaped or block-shaped and are continuously or discretely arranged, i.e. are continuously arc-shaped or continuously block-shaped or discretely arc-shaped or discrete block-shaped, and the continuous arc-shaped arrangement is preferred in this embodiment.
Example 4
The embodiment provides a manufacturing method of a light emitting diode, which at least comprises the following steps:
s1, providing a substrate 10; wherein the substrate 10 is a patterned sapphire substrate;
s2, growing a semiconductor lamination layer on the substrate 10, wherein the semiconductor lamination layer comprises a first semiconductor layer 20, a second semiconductor layer 40 and an active layer 30 which is clamped between the first semiconductor layer 20 and the second semiconductor layer 40;
the method of forming the first semiconductor layer 20 and the second semiconductor layer 40 is not particularly limited, and examples thereof include Metal Organic Chemical Vapor Deposition (MOCVD), molecular Beam Epitaxy (MBE), halide vapor phase epitaxy (HPVE), sputtering, ion plating, and electron shower. The implementation is made by adopting a conventional MOCVD method.
S3, manufacturing a first electrode 21 and a second electrode 41, wherein the first electrode 21 is electrically connected with the first semiconductor layer 20, the second electrode 41 is electrically connected with the second semiconductor layer 40, and the first electrode 21 comprises a pad part 211 and an extension part 212;
specifically, a step is formed by etching a portion of the second semiconductor layer 40 to the first semiconductor layer 20, and then the first electrode 21 and the second electrode 41 are formed on the surface of the step and the surface of the second semiconductor layer 40, respectively. The etching method may be dry etching, wet etching or a combination of the two.
The invention makes the first electrode 21 with interval distribution under the reserved extension 212 before the extension 212 growsA recess 23 is provided to form the support structure 22, and the bottom of the first recess 23 is exposed to the substrate 10. The first recess 23 is formed by means of a photomask and etching, and has an inclined inner wall. For example, the first groove 23 is formed by a photomask process and dry etching, and the sidewall of the first groove 23 is etched by the sidewall to form an inclined surface. Wherein, the inclined inner wall of the first groove 23 can be etched by etching with acid solution, which can be diluted mixed solution of sulfuric acid and hydrofluoric acid, H 2 PO 3 Solution H 2 SO 4 Solution H 2 PO 3 And H 2 SO 4 The temperature of the corrosion solution is 25-350 ℃ and can achieve better corrosion effect.
The first semiconductor layer 20 between the pad part 211 and the active layer 30 may be removed by means of a photomask and etching while the first groove 23 is formed, to form the second groove 60 having inclined inner walls. For example, the second groove 60 is formed by removing the first semiconductor layer 20 between the pad portion 211 and the active layer 30 by a photomask process and a dry etching method, and forming an inclined surface by etching the sidewall of the first groove 23 through the sidewall. The sidewall of the semiconductor stack forms a reflective surface 50 surrounding the active layer 30 by means of a photomask and etching, and the distance between the reflective surface 50 and the active layer 30 is reduced, preferably by 0-25 μm, so as to have a better reflective distance. Specifically, the semiconductor stack may be subjected to a forward scribing or a masking process and dry etching to remove a portion of the first semiconductor layer 20 while etching the sidewalls of the semiconductor stack in cooperation with the sidewalls to form the reflective surface 50.
The invention increases the whole reflection area of the light emitting diode and simultaneously can effectively avoid the problem that the extension 212 shields the light, improves the light extraction efficiency of the light emitting diode and realizes better reflection effect by reducing the distance between the reflection surface 50 of the semiconductor lamination and the active layer 30 by manufacturing the inclined reflection surface 50 between the first electrode 21 and the active layer 30 and the side surface of the semiconductor lamination.
It should be understood that the foregoing specific embodiments are preferred examples of the present invention, and the scope of the present invention is not limited to the examples, but any modifications made in accordance with the present invention are within the scope of the present invention.
Claims (16)
1. The light-emitting diode comprises a substrate and a semiconductor lamination layer, wherein the semiconductor lamination layer comprises a first semiconductor layer, a second semiconductor layer, an active layer and a first electrode and a second electrode, wherein the active layer is clamped between the first semiconductor layer and the second semiconductor layer, the first electrode and the second electrode are respectively electrically connected with the first semiconductor layer and the second semiconductor layer, and at least the first electrode comprises a bonding pad part and an extension part.
2. A light emitting diode according to claim 1 wherein the sidewalls of the semiconductor stack are sloped sidewalls and form an angle a with the substrate to form the reflective surface.
3. A light emitting diode according to claim 1 wherein the extension extends along the top surface, side walls, and upper surface of the substrate of the support structure.
4. The led of claim 1, wherein the extension is disposed on the support structure and suspended above the substrate.
5. The led of claim 1, wherein the side of the support structure along the direction of the first electrode extension is an inclined side and forms an angle B with the substrate, wherein the angle B is greater than 90 degrees and less than 180 degrees.
6. A light emitting diode according to claim 1 wherein the support structure has a length of at least 3 μm.
7. A light emitting diode according to claim 1, wherein the length of the support structure is gradually reduced or gradually increased or the same from the pad portion to the end of the extension portion.
8. A light emitting diode according to claim 1, wherein the length of the first groove is gradually reduced or gradually increased or the same from the pad portion to the end of the extension portion.
9. A light emitting diode according to claim 1, wherein a region of the first semiconductor layer between the pad portion of the first electrode and the active layer is provided with a second recess.
10. The led of claim 9, wherein the bottom of the second recess exposes the substrate.
11. A light emitting diode according to claim 9 wherein the second grooves are arc-shaped or block-shaped and are arranged continuously or discretely.
12. A light emitting diode according to claim 1 or 2, wherein the distance from the reflective surface to the active layer is 0-25 μm.
13. A manufacturing method of a light emitting diode at least comprises the following steps:
s1, providing a substrate;
s2: growing a semiconductor stack on the substrate, the semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer;
s3: manufacturing a first electrode and a second electrode, wherein the first electrode is electrically connected with the first semiconductor layer, and the second electrode is electrically connected with the second semiconductor layer, and at least the first electrode comprises a bonding pad part and an extension part;
the LED display device is characterized in that supporting structures are arranged below the extension parts at intervals, first grooves are arranged between adjacent supporting structures, the bottoms of the first grooves are exposed out of the substrate, an included angle A is formed between the inner wall of the first grooves facing the active layer and the substrate, so that a reflecting surface is formed, and the included angle A is larger than 0 degree and smaller than 90 degrees.
14. The method of claim 13, wherein the first recess is formed by masking and etching and has an inclined inner wall.
15. The method of claim 13, wherein the first semiconductor layer is removed between the pad portion and the active layer by masking and etching to form a second recess having an inclined inner wall while the first recess is formed.
16. The method of claim 13, wherein the semiconductor stack having the inclined surface is formed by masking and etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111165751.5A CN113871519B (en) | 2021-09-30 | 2021-09-30 | Light-emitting diode and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111165751.5A CN113871519B (en) | 2021-09-30 | 2021-09-30 | Light-emitting diode and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN113871519A CN113871519A (en) | 2021-12-31 |
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