CN115332410A - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
CN115332410A
CN115332410A CN202210825345.5A CN202210825345A CN115332410A CN 115332410 A CN115332410 A CN 115332410A CN 202210825345 A CN202210825345 A CN 202210825345A CN 115332410 A CN115332410 A CN 115332410A
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CN
China
Prior art keywords
layer
opening
semiconductor
extension
semiconductor layer
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Pending
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CN202210825345.5A
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Chinese (zh)
Inventor
杨人龙
张平
张丽明
张玉杰
张中英
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Priority to CN202210825345.5A priority Critical patent/CN115332410A/en
Publication of CN115332410A publication Critical patent/CN115332410A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The disclosed light emitting diode includes: a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; an insulating layer formed on the transparent conductive layer, the insulating layer having a series of openings; a second electrode formed on the insulating layer and electrically connected to the second semiconductor layer, the second electrode including a second pad portion and a second extension portion; a current blocking layer disposed on the semiconductor stack and under the second extension; the current blocking layer comprises a first portion and a second portion adjacent to the first portion, the first portion and the insulating layer opening have an overlapping area in the projection direction of the semiconductor lamination, the distance between the first portion and the second extension portion is T1, the distance between the second portion and the second extension portion is T2, and T1 is larger than T2.

Description

Light emitting diode
Technical Field
The invention relates to the technical field of semiconductors, in particular to a light emitting diode.
Background
The Light Emitting Diode (LED) is a semiconductor device that emits Light by using energy released during carrier recombination, has many advantages of low power consumption, pure chromaticity, long service life, small volume, fast response time, energy saving, environmental protection, and the like, and is widely applied to lighting, visible Light communication, light Emitting display, and other scenes.
In GaN LEDs, P-GaN generally causes a certain current crowding under the P-type electrode due to its low carrier mobility. Therefore, a current blocking layer is usually added below the P-type electrode to suppress current over-injection and increase current diffusion in the transparent conductive layer. The chip manufacturing process usually includes at least five processes of MESA Etching (MESA), manufacturing a current blocking layer, manufacturing a transparent conductive layer (such as ITO), manufacturing an insulating layer, and manufacturing an electrode.
Disclosure of Invention
The invention provides a light emitting diode, which can improve the uniformity and the reliability of current diffusion of the light emitting diode.
Specifically, an embodiment of the present invention provides a light emitting diode, including: a light emitting diode comprising: a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; a transparent conductive layer on the current blocking layer and/or on the second semiconductor layer; an insulating layer formed on the transparent conductive layer, the insulating layer having a series of openings; a first electrode formed on the insulating layer and electrically connected to the first semiconductor layer; a second electrode formed on the insulating layer and electrically connected to the second semiconductor layer, the second electrode including a second pad portion and a second extension portion; a current blocking layer disposed on the semiconductor stack and under the second extension; the current blocking layer comprises a first portion and a second portion adjacent to the first portion, the first portion and the insulating layer opening have an overlapping area in the projection direction of the semiconductor lamination, the distance between the first portion and the second extension portion is T1, the distance between the second portion and the second extension portion is T2, and T1 is larger than T2.
Further, the difference value between the T1 and the T2 is 0.5 to 15 mu m.
Furthermore, the distance between the first part and the second expansion part is 6 to 18 mu m, and the distance between the second part and the second expansion part is 3 to 10 mu m.
Furthermore, the insulating layer opening comprises a first opening to expose a part of the surface of the transparent conductive layer, the first part of the current blocking layer and the first opening have an overlapping area in the projection direction of the semiconductor lamination, and the distance between the second extension and the transparent conductive layer through the first opening is within 5 to 30 μm in the extension direction parallel to the second extension.
Further, in the extending direction parallel to the second expansion part, the width of the first part is 5-30 μm, and the width of the second part is larger than 15 μm.
Further, the transparent conductive layer has a second opening to expose a part of the surface of the second semiconductor layer, the insulating layer has a third opening to expose a part of the surface of the second semiconductor layer, projections of the second opening and the third opening on the semiconductor stack layer have an overlapping area, and the second pad portion is in contact with the semiconductor layer through the second opening and the third opening.
Further, a minimum distance between the third opening of the insulating layer and the second opening of the transparent conductive layer is less than 3 μm.
Further, the semiconductor stack includes a mesa formed through the second semiconductor layer and the active layer and one or more via holes to expose a portion of a surface of the first semiconductor layer therethrough, the first electrode includes a first pad part on the mesa and a first extension part on the insulating layer, the first extension part extending from the first pad part to the second pad part.
Further, the insulating layer covers the sidewall of the stacked semiconductor via, the insulating layer has a fifth opening to expose a part of the surface of the first semiconductor layer, the end of the first extension portion is in contact with the first semiconductor layer through the fifth opening, and the distance between the end of the first extension portion and the fifth opening of the insulating layer in the extending direction parallel to the first extension portion is less than 10 μm.
Furthermore, in the extending direction parallel to the second extension part, the distance between the tail end of the second extension part and the current barrier layer is 0-20 mu m.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings required to be used in the description of the embodiments will be briefly introduced below, and it is apparent that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a top view of an LED according to an embodiment of the present invention;
FIG. 2 isbase:Sub>A side cross-sectional view taken along line A-A' of FIG. 1;
FIG. 3 is a side cross-sectional view taken along line B-B' of FIG. 1;
FIG. 4 is an enlarged schematic view of detail C of FIG. 1;
fig. 5 is a SEM image of a conventional product.
Reference numerals are as follows:
110. a substrate; 120. a semiconductor stack; 121. a first semiconductor layer; 122. an active layer; 123. a second semiconductor layer; 124. a table top; 125. a through hole; 130. a current blocking layer; 131. a first portion; 132. a second portion; 140. a transparent conductive layer; 150. an insulating layer; 160. a first electrode; 161. a first pad part; 162. a second expansion section; 170. a second electrode; 171. a second pad part; 172. a second expanded portion; 151. a first opening; 141 a second opening; 152. a third opening; 142. a fourth opening; 153. a fifth opening; 154. and a sixth opening.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
Referring to fig. 1 to 4, fig. 1 isbase:Sub>A top view ofbase:Sub>A light emitting diode according to an embodiment of the present invention, fig. 2 isbase:Sub>A side sectional view taken along linebase:Sub>A-base:Sub>A 'of fig. 1, and fig. 3 isbase:Sub>A side sectional view taken along line B-B' of fig. 1; fig. 4 is an enlarged view of a portion C of fig. 1. As shown in fig. 1 to 4, the light emitting diode 10 includes, for example: a substrate 110, a semiconductor stack 120, a current blocking layer 130, a transparent conductive layer 140, an insulating layer 150, a first electrode 160, and a second electrode 170.
As shown in fig. 1 to 4, the substrate 110 may be an insulating substrate, and preferably may be made of a transparent material or a translucent material or a non-transparent material. In the illustrated embodiment, the substrate 110 is sapphire (Al) 2 O 3 ) A substrate. In some embodiments, substrate 110 may be a patterned sapphire substrate, but is not limited thereto. The substrate 110 may also be made of a conductive or semiconductor material. For example, the substrate 110 may be silicon carbide (SiC), silicon (Si), magnesium aluminum oxide (MgAl) 2 O 4 ) Magnesium oxide (MgO), lithium aluminum oxide (LiAlO 2), aluminum gallium oxide (LiGaO) 2 ) And gallium nitride (GaN). In some embodiments, the substrate 110 may be thinned or removed to form a thin film type LED light emitting diode.
In some embodiments, the upper surface of the substrate 110 may have a patterned structure (not shown in the drawings), which may improve external light extraction efficiency and crystallinity of the semiconductor stack 120. Alternatively, the upper surface patterning structure of the substrate 110 may be formed in various shapes, such as a mesa, a cone, a triangular pyramid, a hexagonal pyramid, a cone-like, a triangular pyramid-like, or a hexagonal pyramid-like, and the like. In addition, a patterned structure of the upper surface of the substrate 110 may be selectively formed at each regionOr may be omitted at the domain. The material of the patterned structure may be the same as the material of the substrate 110 or may be different from the material of the substrate 110. For example, the material of the patterned structure is selected to have a refractive index lower than that of the substrate 110 to facilitate light extraction, and may be SiO 2 And so on.
In this specification, the upper and lower positions are defined by the position of the substrate 110. Assume that the direction close to the substrate 110 is downward and the direction away from the substrate 110 is upward. The upper and lower position settings in this specification are only for describing the positional relationship of the respective members in the illustrated embodiments, and do not represent an indication or suggestion that they must have a specific orientation.
The semiconductor stack 120 may be formed on the substrate 110 by Metal Organic Chemical Vapor Deposition (MOCVD), molecular Beam Epitaxy (MBE), hydride vapor deposition (HVPE), physical vapor deposition (pvd), or ion plating. The substrate 110 has opposite upper and lower surfaces, and the semiconductor stack 120 is formed on the upper surface of the substrate 110. The semiconductor stack 120 includes a first semiconductor layer 121, an active layer 122 (or referred to as a light emitting layer 122, an active layer 122), and a second semiconductor layer 123 sequentially stacked on the upper surface of the substrate 110 along a stacking direction. In other embodiments, the semiconductor stack 120 may also be formed on the substrate 110 by a bonding layer, which is preferably a light-transmissive material.
The semiconductor stack 120 may provide light of a specific central emission wavelength, such as blue, green or red light or violet or ultraviolet light. In the illustrated embodiment, the blue light is provided by the stacked semiconductor layer 120. In the illustrated embodiment, the first semiconductor layer 121 in the semiconductor stack 120 is an N-type semiconductor layer, and can provide electrons to the active layer 122 under the action of a power source. In some embodiments, the N-type semiconductor layer in the first semiconductor layer 121 includes an N-type doped nitride layer. The N-type doped nitride layer may include one or more N-type impurities of a group IV element. The N-type impurity may be one of Si, ge, sn, or a combination thereof.
In some embodiments, the active layer 122 may be a multi-quantum well (MQWs) structure in which quantum well layers and quantum barrier layers are alternately stacked. The active layer 122 may be a single quantum well structure or a multiple quantum well structure. The quantum barrier layer may be a GaN layer or an AlGaN layer. In some embodiments, the active layer 122 may include a multi-quantum well structure of GaN/AlGaN, inAlGaN/InAlGaN, or InGaN/AlGaN. To improve the light emitting efficiency of the active layer 122, this may be accomplished by varying the depth of the quantum wells, the number of layers, the thickness, and/or other characteristics of the pairs of quantum wells and quantum barriers in the active layer 122.
The second semiconductor layer 123 in the semiconductor stack 120 is a P-type semiconductor layer, and can provide holes to the active layer 122 under the action of a power supply. In some embodiments, the P-type semiconductor layer in the second semiconductor layer 123 includes a P-type doped nitride layer. P-type doped nitride layer impurities. The P-type hetero-may include one or more group II elements and may Be one of Mg, zn, be, or a combination thereof. The second semiconductor layer 123 may have a single-layer structure or a multi-layer structure having different compositions. The arrangement of the semiconductor stack 120 is not limited thereto, and other kinds of semiconductor stacks 120 may be selected according to actual requirements.
In some embodiments, the light emitting diode may have a buffer layer (not shown) between the substrate 110 and the semiconductor stack 120 to reduce lattice mismatch between the substrate 110 and the first semiconductor layer 121. In some embodiments, the buffer layer may include an unintentionally doped GaN layer (abbreviated u-GaN) or an unintentionally doped AlGaN layer (abbreviated u-AlGaN).
The buffer layer may be a single layer or a plurality of layers. The buffer layer may be formed by metal organic chemical vapor Deposition, molecular beam epitaxy, or Physical Vapor Deposition (PVD). The physical vapor deposition may include sputtering (sputter) method, such as reactive sputtering, or evaporation; such as electron beam evaporation or thermal evaporation. In one embodiment, the buffer layer may include an aluminum nitride (AlN) buffer layer formed on the substrate 110 having the patterned structure surface, and be formed by a sputtering method. The sputtering method can form a dense buffer layer with high uniformity, so that an aluminum nitride buffer layer can be deposited on the patterned structure surface of the substrate 110.
The semiconductor stack 120 may include a partially exposed region of the first semiconductor layer 121 formed by partially removing the second semiconductor layer 123 and the active layer 122 by etching. For example, as shown in fig. 1, the semiconductor stack 120 may include a mesa 124 formed through the second semiconductor layer 123 and the active layer 122 and one or more vias 125 to expose a portion of the surface of the first semiconductor layer 121 therethrough. The through holes 125 may be regularly arranged on the semiconductor stack 120. However, it is to be understood that the present invention is not limited thereto, and the configuration and number of the through holes 125 may be changed according to various ways.
The first electrode 160 and the second electrode 170 are provided for external electrical connection of the first semiconductor layer 121 and the second semiconductor layer 123, and may be electrically connected to the first semiconductor layer 121 and the second semiconductor layer 123, respectively. The first electrode 160 and the second electrode 170 may be located on the same side of the substrate 110 or on opposite sides of the substrate 110. Fig. 3-5 reveal that the first electrode 160 and the second electrode 170 are located on the same side of the substrate 110.
As shown in fig. 1, the led comprises a rectangle in a top view, having a long side and a short side. The first electrode 160 includes a first pad portion 161; and one or more first extension portions 162 extending from the first pad portion 161 and extending toward the second pad portion 171 in a direction along a long side of the light emitting diode. The second electrode 170 includes a second pad portion 171; and one or more second expanding portions 172 extending from the second pad portion 171 and extending toward the first pad portion 161 in a direction along the long side of the light emitting diode.
The current blocking layer 130 has a stripe portion formed on the second semiconductor layer 123 and under the second extension 172. The current blocking layer 130 is similar in shape to the second extension 172. The light emitting diode according to the embodiment forms the current blocking layer 130 under the second extension portion 172, so that current injection close to the lower portion of the second extension portion 172 can be suppressed, and the length and uniformity of current injection can be increased.
The material of the current blocking layer 130 includes at least one of transparent inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, and aluminum oxide. The current blocking layer 130 may also be a single layer or an alternating multi-layer structure, and the single layer may be a material having high light transmittance, for example, higher than 80%, such as silicon oxide. The current blocking layer 130 may also be a material that is combined in multiple layers to form a reflective material with a reflectivity higher than 60%, such as a bragg mirror. The thickness of the current blocking layer 130 can be selected from any thickness of 50 to 500nm.
The transparent conductive layer 140 is disposed on the current blocking layer 130 and/or the surface of the second semiconductor layer 123, so that the current injected into the second electrode 170 is uniformly diffused to the entire surface of the second semiconductor layer 123, and the transparent conductive layer 140 can enhance ohmic contact with the second semiconductor layer 123. The material of the transparent conductive layer 140 may be ITO, inO, snO, CTO, ATO, znO, gaP, or a combination thereof. The transparent conductive layer 140 can be formed by evaporation or sputtering. The thickness of the transparent conductive layer 140 is selected from the range of 5nm to 500nm in the present embodiment. Further, it is preferably selected from the range of 20nm to 300 nm.
The insulating layer 150 is formed on the transparent conductive layer 140 while covering the upper surface of the mesa 124, the sidewalls of the via 125, and the sidewalls connecting between the mesa 124 and the upper surface of the transparent conductive layer 140, i.e., substantially covering the entire device surface. The material of the insulating layer 150 can be SiO 2 、Si 3 N 4 、Al 2 O 3 、TiO 2 Etc., siO is selected in this embodiment 2 。
In the light emitting diode structure of this embodiment, the insulating layer 150, on one hand, protects the surface of the light emitting diode, on the other hand, can be used as a current blocking layer for inhibiting current over-injection below the electrode and increasing current diffusion of the transparent conductive layer 140, and considering the requirements of both, the thickness d is preferably λ/4 nx (2 k-1), where λ is the light emitting wavelength of all the source layers 122, n is the refractive index of the insulating layer 150, k is a natural number greater than 1, k is preferably 2 to 3, and the corresponding thickness is preferably 150nm to 500nm. When the thickness of the insulating layer 150 is too small, it is not preferable to function as a current blocking layer and a protection function, and when the thickness is too large, the material itself absorbs light to additionally increase light loss.
The first pad portion 161 of the first electrode 160 is located on the mesa 124 of the stack of semiconductor layers 120, and the first extension portion 161 is located on the insulating layer 150. The second electrode 170 is positioned on the insulating layer 150.
As shown in fig. 1 to 4, the insulating layer 150 includes a first opening 151 to expose a portion of the surface of the transparent conductive layer 140, and the second extension 172 contacts the transparent conductive layer 140 through the first opening 151. The insulating layer 150 under the second extension 172 serves as a current blocking layer, and when energized, most of the current is injected from the second extension 172 into the transparent conductive layer 140 through the first opening 151. Since a burn or an electrostatic breakdown may easily occur at a position where the second extension 172 contacts the transparent conductive layer 140 through the first opening 151 in a high current or high electrostatic impact mode, especially, an ESD explosion point burn may easily occur at a stepped position of the current blocking layer 130 under the first opening 151, as shown in fig. 5, resulting in poor ESD performance and a reduction in ESD yield of the light emitting diode. Thus, in an embodiment, the current blocking layer 130 has a first portion 131 and a second portion 132 adjacent to the first portion 131. The first portion 131 has an overlapping area with a projection of the first opening 151 on the semiconductor stack 120, and the first portion 131 is located outside the first opening 151. The distance between the first portion 131 and the second extension portion 172 is T1, and the distance between the second portion 131 and the second extension portion 172 is T2, so that T1 is greater than T2, most of the current injected into the transparent conductive layer 140 from the second extension portion 172 through the first opening 151 can be laterally extended to a farther place, and the transparent conductive layer under the first opening 151 can be prevented from being excessively gathered, so as to achieve the effect of adjusting the current diffusion uniformity and improve the high-order ESD impact resistance of the product. In a preferred embodiment, T1 is larger than T2 by 0.5 μm to 15 μm, such as larger than 0.5 μm, 1 μm, 2 μm, 5 μm, 10 μm, 15 μm. If T1 exceeds T2 by more than 15 μm, the light absorption is affected by the too large area of the current blocking layer 130, which affects the light extraction efficiency of the led. Further, T1 may preferably be 6 to 18 μm, and T2 may preferably be 3 to 10 μm.
In one embodiment, the distance between the second extension 172 and the transparent conductive layer 140 through the first opening 151 is between 5 μm and 30 μm. If the thickness is less than 5 μm, the contact area between the second extension portion 172 and the transparent conductive layer 140 is too small, which is likely to cause current crowding effect and is not conducive to the balanced current extension of the led; if the thickness is larger than 30 micrometers, the contact area between the electrode of the expansion part and the transparent conducting layer is larger, so that the current regulation and control effect of the whole surface of the light-emitting diode is reduced, and the luminous efficiency of a product is influenced.
In an embodiment, in the extending direction parallel to the second extension part 172, the width of the first portion 131 is T3, and T3 may be 5 to 30 μm; the width of the second portion is T4, and T4 may be greater than 15 μm.
In one embodiment, the transparent conductive layer 140 includes a second opening 141 to expose a portion of the surface of the second semiconductor layer 123, and the insulating layer 150 covering the transparent conductive layer 140 includes a third opening 152 to expose a portion of the surface of the second semiconductor layer 123. The projections of the second opening 141 and the third opening 152 on the semiconductor stacked layer 120 have an overlapping area. The second pad part 172 is in contact with the second semiconductor layer 123 through the second opening 141 and the third opening 152, so that the contact area between the second pad part 172 and the second semiconductor layer 123 can be increased, the adhesion between the electrode and the nitride interface is good, and the risk that the second pad part 172 and the adhesion interface fall off during wire bonding can be reduced. The minimum distance between the third opening 152 and the second opening 141 is less than 3 μm.
In an embodiment, the transparent conductive layer 140 includes a fourth opening 142 to expose a portion of the surface of the second semiconductor layer 123, and the projection of the fourth opening 142 and the through hole 125 of the stacked semiconductor layer 120 on the stacked semiconductor layer 120 has an overlapping area. The fourth opening 142 is formed outside the via 125 of the stack of semiconductor layers 120. The insulating layer 150 includes a fifth opening 153 to expose a portion of the surface of the first semiconductor layer 121, and the fifth opening 153 has an overlapping area with a projection of the via 125 of the stacked semiconductor layer 120 on the stacked semiconductor layer 120. The fifth opening 153 is formed inside the through hole 125 of the stack of semiconductor layers 120. The first extension 162 is formed on the insulating layer 150 to contact the first semiconductor layer 121 through the fifth opening 153. The end of the first extension 162 is formed in the fifth opening having the smallest distance from the second pad portion, and the distance from the end of the first extension 162 to the fifth opening is less than 10 μm in the extending direction parallel to the first extension.
In one embodiment, the distance between the end of the second extension 172 and the first opening 151 is less than 10 μm in the direction parallel to the extension direction of the second extension; the distance between the end of the second extension part 172 and the current extension layer is 0 to 20 μm.
In one embodiment, the insulating layer 150 covering the mesa 124 of the stack of semiconductor layers 120 has a sixth opening 154, and the sixth opening 154 has a ring shape. The first pad portion 161 is located on the insulating layer 150 covering the mesa 124, and contacts the first semiconductor layer 121 through the annular sixth opening 154, and the first extension portion 162 is formed on the second semiconductor layer 123, and contacts the first semiconductor layer 121 through the via 124.
In yet another embodiment, the first width T1 of the first portion 131 becomes gradually larger from the extending direction of the second extension portion 172, so that the possibility of occurrence of an ESD pop point due to gradual current crowding of the second extension portion 172 along the extending direction can be avoided.

Claims (10)

1. A light emitting diode comprising:
a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;
a transparent conductive layer on the current blocking layer and/or on the second semiconductor layer;
an insulating layer formed on the transparent conductive layer, the insulating layer having a series of openings;
a first electrode formed on the insulating layer and electrically connected to the first semiconductor layer;
a second electrode formed on the insulating layer and electrically connected to the second semiconductor layer, the second electrode including a second pad portion and a second extension portion;
a current blocking layer disposed on the semiconductor stack and under the second extension;
the current blocking layer comprises a first portion and a second portion adjacent to the first portion, the first portion and the insulating layer opening have an overlapping area in the projection direction of the semiconductor lamination, the distance between the first portion and the second extension portion is T1, the distance between the second portion and the second extension portion is T2, and T1 is larger than T2.
2. The LED of claim 1, wherein the difference between T1 and T2 is 0.5-15 μm.
3. The light-emitting diode of claim 1, wherein the distance between the first part and the second extension is 6 to 18 μm, and the distance between the second part and the second extension is 3 to 10 μm.
4. The light-emitting diode of claim 1, wherein the opening of the insulating layer comprises a first opening to expose a part of the surface of the transparent conductive layer, the first portion of the current blocking layer and the first opening have an overlapping area in a projection direction of the stacked semiconductor layer, and a distance from the second extended portion to the transparent conductive layer through the first opening is 5 to 30 μm in an extending direction parallel to the second extended portion.
5. The light-emitting diode of claim 1, wherein the width of the first portion is 5 to 30 μm and the width of the second portion is greater than 15 μm in an extending direction parallel to the second extension portion.
6. The light-emitting diode according to claim 1, wherein the transparent conductive layer has a second opening to expose a part of a surface of the second semiconductor layer, the insulating layer has a third opening to expose a part of a surface of the second semiconductor layer, projections of the second opening and the third opening on the semiconductor stacked layer have an overlapping area, and the second pad portion is in contact with the semiconductor layer through the second opening and the third opening.
7. The light-emitting diode according to claim 6, wherein a minimum distance between the third opening of the insulating layer and the second opening of the transparent conductive layer is less than 3 μm.
8. The light-emitting diode according to claim 1, wherein the stack of semiconductor layers includes a mesa formed through the second semiconductor layer and the active layer and one or more vias to expose a portion of a surface of the first semiconductor layer therethrough, the first electrode includes a first pad portion on the mesa and a first extension on the insulating layer, the first extension extending from the first pad portion to the second pad portion.
9. The led of claim 9, wherein the insulating layer covers the sidewalls of the stacked semiconductor via, the insulating layer has a fifth opening to expose a portion of the surface of the first semiconductor layer, the end of the first extension portion contacts the first semiconductor layer through the fifth opening, and the distance between the end of the first extension portion and the fifth opening of the insulating layer is less than 10 μm in a direction parallel to the extension direction of the first extension portion.
10. The light-emitting diode according to claim 1, wherein a distance between a terminal of the second extension and the current blocking layer in a direction parallel to an extending direction of the second extension is 0 to 20 μm.
CN202210825345.5A 2022-07-14 2022-07-14 Light emitting diode Pending CN115332410A (en)

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CN202210825345.5A CN115332410A (en) 2022-07-14 2022-07-14 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210825345.5A CN115332410A (en) 2022-07-14 2022-07-14 Light emitting diode

Publications (1)

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CN115332410A true CN115332410A (en) 2022-11-11

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