KR100965242B1 - Light emitting diode with a plurality of insulator layers and fabrication method of the same - Google Patents
Light emitting diode with a plurality of insulator layers and fabrication method of the same Download PDFInfo
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- KR100965242B1 KR100965242B1 KR1020080011584A KR20080011584A KR100965242B1 KR 100965242 B1 KR100965242 B1 KR 100965242B1 KR 1020080011584 A KR1020080011584 A KR 1020080011584A KR 20080011584 A KR20080011584 A KR 20080011584A KR 100965242 B1 KR100965242 B1 KR 100965242B1
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Abstract
The invention provides a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer formed in sequence; Two or more insulating layers having different refractive indices having regions alternately stacked on the second conductive semiconductor layer and having regions opened to expose a portion of the second conductive semiconductor layer; A bonding metal layer formed on an outermost layer of the insulating layers; A substrate formed on the bonding metal layer; A light emitting diode including ohmic electrodes formed between the second conductive semiconductor layer and the bonding metal layer through the open regions of the insulating layers is provided.
Semiconductor layer, DBR, reflectance, reflecting layer, ohmic electrode, diode
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly, to a light emitting diode in which a plurality of insulating layers having different refractive indices are alternately stacked and a method of manufacturing the same.
In general, nitrides of Group III elements, such as gallium nitride (GaN) and aluminum nitride (AlN), have excellent thermal stability and have a direct transition energy band structure. As a lot of attention. In particular, blue and green light emitting devices using gallium nitride (GaN) have been used in various applications such as large-scale color flat panel display devices, traffic lights, indoor lighting, high density light sources, high resolution output systems, and optical communications.
The nitride semiconductor layer of such a group III element, in particular, GaN, is difficult to fabricate a homogeneous substrate capable of growing it, and thus, it is difficult to fabricate a homogeneous substrate capable of growing it, such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy; MBE) and other processes. As a hetero substrate, a sapphire substrate having a hexagonal structure is mainly used. However, since sapphire is an electrically insulator, it restricts the light emitting diode structure and is very stable mechanically and chemically, making it difficult to process such as cutting and shaping, and low thermal conductivity. Accordingly, in recent years, after the nitride semiconductor layers are grown on a dissimilar substrate such as sapphire, a technique of manufacturing a light emitting diode having a vertical structure by separating the dissimilar substrate has been studied.
1 is a cross-sectional view illustrating a vertical light emitting diode according to the prior art.
Referring to FIG. 1, the vertical light emitting diode includes a
Compound semiconductor layers are generally grown on a sacrificial substrate (not shown), such as a sapphire substrate, using metalorganic chemical vapor deposition or the like. Thereafter, the
In general, the vertical light emitting diode adopts a
However, after the
In addition, in the case of the conventional metal reflective film, since there is no material having a reflectivity of 80% or more in the ultraviolet region, there is a problem that light loss occurs when manufacturing the ultraviolet light emitting diode.
An object of the present invention is to improve the luminous efficiency of a light emitting diode by preventing the reflective layer from being damaged by heat treatment in the light emitting diode.
In addition, another object of the present invention is to provide a light emitting diode having excellent light efficiency in the ultraviolet region.
According to an aspect of the present invention for achieving the above object, the first conductive semiconductor layer, the active layer, the second conductive semiconductor layer formed in sequence; Two or more insulating layers having different refractive indices having regions alternately stacked on the second conductive semiconductor layer and having regions opened to expose a portion of the second conductive semiconductor layer; A bonding metal layer formed on an outermost layer of the insulating layers; A substrate formed on the bonding metal layer; A light emitting diode including ohmic electrodes formed between the second conductive semiconductor layer and the bonding metal layer through the open regions of the insulating layers is provided.
Preferably, the insulating layers are alternately stacked with at least two insulating layers selected from a nitride based insulating layer, an oxide based insulating layer, and a sulfur based insulating layer.
Preferably, the insulating layers, two or more different insulating layers are repeatedly alternately stacked in a plurality of layers.
Preferably, the insulating layers are etched into a matrix pattern of islands or a plurality of lines or reticulated patterns.
Preferably, the light emitting diode further comprises an electrode pad formed on the first conductivity type semiconductor layer; The substrate formed on the bonding metal layer is a conductive substrate.
Preferably, the light emitting diode is a portion of the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer is etched to expose a portion of the insulating layers and the ohmic electrodes, the first conductive semiconductor Electrode pads are formed on top of the layer and on the exposed at least one ohmic electrode, respectively, and the substrate formed on the bonding metal layer is an insulating substrate.
According to another aspect of the invention, the steps of alternately stacking two or more insulating layers having different refractive indices on the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer sequentially formed on the sacrificial substrate; Partially patterning the stacked insulating layers so that the second conductive semiconductor layer is exposed to form regions open to the insulating layers; Forming ohmic electrodes in contact with the second conductivity type semiconductor layer in open regions of the insulating layers; Forming a bonding substrate on the insulating layers and the ohmic electrodes through a bonding metal; A light emitting diode manufacturing method comprising the step of separating the sacrificial substrate is provided.
Preferably, the laminating step alternately stacks at least two insulating layers selected from a nitride based insulating layer, an oxide based insulating layer, and a sulfur based insulating layer.
Preferably, the laminating step is to alternately stack two or more different insulating layers in a plurality of layers.
Preferably, in the patterning etching step, the stacked insulating layers are etched into a matrix pattern of islands or a plurality of lines or reticulated patterns using photolithography.
Preferably, the method further comprises forming an electrode pad on the first conductivity type semiconductor layer; The bonding substrate is a conductive substrate.
Advantageously, the method further comprises etching a portion of said first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer to expose said insulating layers and a portion of said ohmic electrodes; Forming an electrode pad on each of the first conductive semiconductor layer and the exposed ohmic electrodes; The bonding substrate is an insulating substrate.
According to the present invention, a plurality of insulating layers having different refractive indices are laminated between a bonding substrate and a semiconductor layer in a light emitting diode to form a distributed bragg reflector (DBR), and partially patterning the insulating layers to form open regions and to open the insulating layers. By pattern-depositing an ohmic electrode in the regions, the light reflectance of the insulating layer is not damaged by the heat source for bonding the bonding substrate so that the light generated in the active layer and traveling toward the bonding substrate is efficiently reflected from the insulating layers. You can.
In addition, due to the plurality of insulating layers serving as the DBR, light reflectance of 95% or more can be obtained regardless of the wavelength, thereby improving utilization in the ultraviolet region.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention to those skilled in the art will fully convey. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.
2 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
Referring to FIG. 2, compound semiconductor layers including a first
A plurality of
The
The
Since the
Distributed Bragg Reflectors (DBRs) are used in cases where high reflectivity is required in various light emitting devices including light emitting functions, light detection functions, light modulation functions, and the like. Distributed Bragg Reflector (DBR) is a reflector reflecting light by alternately stacking two kinds of media having different refractive indices and using the difference in the refractive indices.
The
The
Meanwhile, a
Meanwhile, the
In the conventional vertical light emitting diode, the metal reflection layer (23 of FIG. 1) is oxidized at the time of heat treatment for bonding the bonding substrate using the bonding metal layer, so that the light reflectance is lowered. On the contrary, according to the exemplary embodiment of the present invention, as the reflection function is performed on the insulating
3 to 8 are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.
Referring to FIG. 3, compound semiconductor layers are formed on the
Meanwhile, the
Referring to FIG. 4, insulating
Referring to FIG. 5, after the SiO 2 layer and the Si 3 N 4 layer are alternately stacked, the insulating
Referring to FIG. 6, after the
Referring to FIG. 7, a
Referring to FIG. 8, the
Subsequently, an electrode pad (73 in FIG. 2) is formed on the first
Meanwhile, before forming the
9 is a cross-sectional view for describing a light emitting diode according to another exemplary embodiment of the present invention.
Referring to FIG. 9, the configuration and operation of the light emitting diode illustrated in FIG. 2 are almost the same. However, in FIG. 2, although the
The present invention is not limited to the above described embodiments, and various modifications and changes can be made by those skilled in the art, which are included in the spirit and scope of the present invention as defined in the appended claims.
1 is a cross-sectional view for explaining a vertical light emitting diode according to the prior art.
2 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
3 to 8 are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.
9 is a cross-sectional view illustrating a light emitting diode according to another embodiment of the present invention.
Claims (12)
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KR1020080011584A KR100965242B1 (en) | 2008-02-05 | 2008-02-05 | Light emitting diode with a plurality of insulator layers and fabrication method of the same |
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Cited By (1)
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KR20180119192A (en) * | 2017-04-24 | 2018-11-02 | 삼성디스플레이 주식회사 | Display device and manufacturing method of the same |
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KR101654342B1 (en) * | 2010-03-31 | 2016-09-06 | 서울바이오시스 주식회사 | High efficiency light emitting diode |
CN103022278A (en) * | 2011-09-27 | 2013-04-03 | 大连美明外延片科技有限公司 | Preparation method of patterned sapphire substrate |
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KR20060029418A (en) * | 2004-10-01 | 2006-04-06 | 엘지이노텍 주식회사 | Light emitting diode and method for manufacturing there of |
KR20060035424A (en) * | 2004-10-22 | 2006-04-26 | 서울옵토디바이스주식회사 | Gan compound semiconductor light emitting element and method of manufacturing the same |
KR20070031351A (en) * | 2007-01-30 | 2007-03-19 | 삼성전기주식회사 | A device and manufacturing method of vertically structured GaN type Light Emitting Diode |
JP2007258277A (en) | 2006-03-20 | 2007-10-04 | Matsushita Electric Works Ltd | Semiconductor light emitting device |
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KR20060029418A (en) * | 2004-10-01 | 2006-04-06 | 엘지이노텍 주식회사 | Light emitting diode and method for manufacturing there of |
KR20060035424A (en) * | 2004-10-22 | 2006-04-26 | 서울옵토디바이스주식회사 | Gan compound semiconductor light emitting element and method of manufacturing the same |
JP2007258277A (en) | 2006-03-20 | 2007-10-04 | Matsushita Electric Works Ltd | Semiconductor light emitting device |
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KR20180119192A (en) * | 2017-04-24 | 2018-11-02 | 삼성디스플레이 주식회사 | Display device and manufacturing method of the same |
KR102324219B1 (en) * | 2017-04-24 | 2021-11-12 | 삼성디스플레이 주식회사 | Display device and manufacturing method of the same |
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