KR101337617B1 - Vertical light emitting diode having ohmic electrode pattern and method of fabricating the same - Google Patents
Vertical light emitting diode having ohmic electrode pattern and method of fabricating the same Download PDFInfo
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- KR101337617B1 KR101337617B1 KR1020060110058A KR20060110058A KR101337617B1 KR 101337617 B1 KR101337617 B1 KR 101337617B1 KR 1020060110058 A KR1020060110058 A KR 1020060110058A KR 20060110058 A KR20060110058 A KR 20060110058A KR 101337617 B1 KR101337617 B1 KR 101337617B1
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Abstract
A vertical light emitting diode having an ohmic electrode pattern and a method of manufacturing the same are disclosed. This light emitting diode includes a conductive substrate. Compound semiconductor layers are located on the conductive substrate. The compound semiconductor layers include a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer. On the other hand, an ohmic electrode pattern is interposed between the compound semiconductor layers and the conductive substrate. The ohmic electrode pattern is in ohmic contact with the compound semiconductor layers and has an opening exposing the compound semiconductor layers. Meanwhile, a metal reflection layer is interposed between the ohmic electrode pattern and the conductive substrate. The metal reflective layer also fills the opening. Accordingly, the light absorption by the ohmic electrode pattern may be reduced to increase the reflectance of light, thereby improving luminous efficiency. The thickness of the ohmic electrode pattern may be increased to provide a vertical light emitting diode capable of stabilizing ohmic contact resistance. Can be.
Vertical light emitting diodes, ohmic electrodes, reflective layers, conductive substrates
Description
1 is a cross-sectional view illustrating a conventional vertical light emitting diode.
2 is a cross-sectional view for describing a vertical light emitting diode having an ohmic electrode pattern according to an exemplary embodiment of the present invention.
3 to 7 are cross-sectional views illustrating a method of manufacturing a vertical light emitting diode having an ohmic electrode pattern according to an embodiment of the present invention.
The present invention relates to a vertical light emitting diode and a method of manufacturing the same, and more particularly to a vertical light emitting diode having an ohmic electrode pattern between the metal reflection layer and the compound semiconductor layer and a method of manufacturing the same.
In general, nitrides of Group III elements, such as gallium nitride (GaN) and aluminum nitride (AlN), have excellent thermal stability and have a direct transition energy band structure. As a lot of attention. In particular, blue and green light emitting devices using gallium nitride (GaN) have been utilized in various applications such as large-scale color flat panel display devices, traffic lights, indoor lighting, high density light sources, high resolution output systems, and optical communications.
The nitride semiconductor layer of such a group III element, in particular GaN, is difficult to fabricate a homogeneous substrate capable of growing it, and thus, a metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy method on a heterogeneous substrate having a similar crystal structure. ; MBE) is grown through the process. A sapphire substrate having a hexagonal system structure is mainly used as a heterogeneous substrate. However, since sapphire is an electrically nonconductive material, it limits the light emitting diode structure and is very stable in terms of mechanics and chemistry, making it difficult to process such as cutting and shaping, and has low thermal conductivity. In recent years, a technology for growing a nitride semiconductor layer on a heterogeneous substrate such as sapphire and then separating the heterogeneous substrate to fabricate a vertical-type LED has been researched.
1 is a cross-sectional view illustrating a conventional vertical light emitting diode.
Referring to FIG. 1, the vertical light emitting diode includes a
The compound semiconductor layers are generally grown on a sacrificial substrate (not shown) such as a sapphire substrate by using a metal organic chemical vapor deposition method or the like. Thereafter, an
The vertical light emitting diode adopts a
However, even when the
SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a vertical light emitting diode capable of improving light emission efficiency by reducing light absorption by an ohmic electrode layer and a method of manufacturing the same.
Another object of the present invention is to provide a vertical light emitting diode and a method of manufacturing the same, which can ensure stable ohmic contact characteristics.
In order to achieve the above technical problem, a vertical light emitting diode having an ohmic electrode pattern according to an aspect of the present invention includes a conductive substrate. Compound semiconductor layers are located on the conductive substrate. The compound semiconductor layers include a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer. On the other hand, an ohmic electrode pattern is interposed between the compound semiconductor layers and the conductive substrate. The ohmic electrode pattern is in ohmic contact with the compound semiconductor layers and has an opening exposing the compound semiconductor layers. Meanwhile, a metal reflection layer is interposed between the ohmic electrode pattern and the conductive substrate. The metal reflective layer also fills the opening. Accordingly, the light absorption by the ohmic electrode pattern may be reduced to increase the reflectance of light, and the thickness of the ohmic electrode pattern may be increased to provide a vertical light emitting diode capable of stabilizing ohmic contact resistance.
The ohmic electrode pattern may be formed in various shapes, and the opening may be formed to be distributed over a wide surface. For example, the ohmic electrode pattern may be a matrix pattern of islands, a plurality of lines or a reticular pattern. Accordingly, the reflectance of the light can be evenly improved over the wide surface of the metal reflection layer while preventing current concentration.
Meanwhile, an electrode pad is positioned on the compound semiconductor layers facing the conductive substrate. In addition, an extension extending from the electrode pad is disposed on the compound semiconductor layers. The extension portion prevents current flowing into the compound semiconductor layer from being concentrated on the electrode pad portion and distributes the current. The extension part may be disposed to be positioned on the ohmic electrode pattern, but it is preferably mainly located on the opening of the ohmic electrode pattern for current dispersion.
According to another aspect of the present invention, a method of manufacturing a vertical light emitting diode having an ohmic electrode pattern includes forming compound semiconductor layers on a sacrificial substrate. The compound semiconductor layers include a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer. An ohmic electrode pattern having an opening exposing the compound semiconductor layers is formed on the compound semiconductor layers. Thereafter, a metal reflection layer is formed on the compound semiconductor layers on which the ohmic electrode pattern is formed. The metal reflection layer fills the opening. Meanwhile, a conductive substrate is formed on the metal reflection layer, and the sacrificial substrate is separated from the compound semiconductor layers. As a result, a vertical light emitting diode having an ohmic electrode pattern is manufactured.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.
2 is a cross-sectional view illustrating a vertical light emitting diode having an
Referring to FIG. 2, compound semiconductor layers including a first
An
Meanwhile, a
In addition, an
Meanwhile, the
The conventional vertical light emitting diode has an ohmic electrode layer (21 in FIG. 1) between the metal reflection layer (23 in FIG. 1) and the compound semiconductor layers. Therefore, since the light directed to the
3 to 6 are cross-sectional views illustrating a method of manufacturing a vertical light emitting diode having an
Referring to FIG. 3, compound semiconductor layers are formed on the
Meanwhile, before forming the compound semiconductor layers, the
Referring to FIG. 4, an
The
The
The ohmic electrode layer or the ohmic electrode pattern may be heat-treated as necessary to make ohmic contact with the second conductivity-
Referring to FIG. 5, the
The
Referring to FIG. 6, a
Subsequently, an
Meanwhile, before forming the
According to embodiments of the present invention, by adopting an ohmic electrode pattern having an opening, it is possible to provide a vertical light emitting diode which can reduce light absorption generated by the conventional ohmic electrode layer and thus improve luminous efficiency. In addition, a thick ohmic electrode pattern can be formed to ensure stable ohmic contact characteristics.
Claims (11)
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KR1020060110058A KR101337617B1 (en) | 2006-11-08 | 2006-11-08 | Vertical light emitting diode having ohmic electrode pattern and method of fabricating the same |
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KR1020060110058A KR101337617B1 (en) | 2006-11-08 | 2006-11-08 | Vertical light emitting diode having ohmic electrode pattern and method of fabricating the same |
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KR101337617B1 true KR101337617B1 (en) | 2013-12-06 |
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Cited By (1)
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WO2017096975A1 (en) * | 2015-12-08 | 2017-06-15 | 天津三安光电有限公司 | Method for preparing vertical light-emitting diode |
Families Citing this family (5)
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KR101449035B1 (en) * | 2008-04-30 | 2014-10-08 | 엘지이노텍 주식회사 | Semiconductor light emitting device |
KR101667815B1 (en) | 2010-02-18 | 2016-10-19 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
US8604500B2 (en) | 2010-03-17 | 2013-12-10 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
WO2012057482A2 (en) * | 2010-10-25 | 2012-05-03 | 일진머티리얼즈 주식회사 | Vertical-type light-emitting diode cell array, and method for manufacturing same |
KR101926499B1 (en) * | 2012-04-20 | 2018-12-10 | 엘지이노텍 주식회사 | Light emitting device, light emitting device package, and light unit |
Citations (2)
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JP2004235581A (en) * | 2003-01-31 | 2004-08-19 | Shin Etsu Handotai Co Ltd | Process for fabricating light emitting element |
KR20060095690A (en) * | 2005-02-28 | 2006-09-01 | 삼성전기주식회사 | Vertical structure nitride semiconductor light emitting device |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004235581A (en) * | 2003-01-31 | 2004-08-19 | Shin Etsu Handotai Co Ltd | Process for fabricating light emitting element |
KR20060095690A (en) * | 2005-02-28 | 2006-09-01 | 삼성전기주식회사 | Vertical structure nitride semiconductor light emitting device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017096975A1 (en) * | 2015-12-08 | 2017-06-15 | 天津三安光电有限公司 | Method for preparing vertical light-emitting diode |
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