KR101229834B1 - Vertical light emitting diode and method of fabricating the same - Google Patents

Vertical light emitting diode and method of fabricating the same Download PDF

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KR101229834B1
KR101229834B1 KR1020060092827A KR20060092827A KR101229834B1 KR 101229834 B1 KR101229834 B1 KR 101229834B1 KR 1020060092827 A KR1020060092827 A KR 1020060092827A KR 20060092827 A KR20060092827 A KR 20060092827A KR 101229834 B1 KR101229834 B1 KR 101229834B1
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South Korea
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layer
compound semiconductor
semiconductor layers
transparent
light emitting
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KR1020060092827A
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Korean (ko)
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KR20080027584A (en
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김윤구
서원철
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서울옵토디바이스주식회사
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Abstract

A vertical light emitting diode and a method of manufacturing the same are disclosed. This light emitting diode includes a conductive substrate. Compound semiconductor layers are located on the conductive substrate. The compound semiconductor layers include a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer. Meanwhile, a metal reflective layer is interposed between the compound semiconductor layers and the conductive substrate, and transparent patterns spaced apart from each other are interposed between the compound semiconductor layers and the metal reflective layer. The transparent patterns reduce light loss due to internal reflection by scattering light incident on the metal reflection layer.

Vertical LEDs, total internal reflection, reflective layers, conductive substrates

Description

Vertical light emitting diode and its manufacturing method {VERTICAL LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME}

1 is a cross-sectional view illustrating a vertical light emitting diode according to the prior art.

2 is a cross-sectional view illustrating a vertical light emitting diode according to an embodiment of the present invention.

3 to 6 are cross-sectional views illustrating a method of manufacturing a vertical light emitting diode according to an embodiment of the present invention.

7 is a cross-sectional view for describing a vertical light emitting diode according to another exemplary embodiment of the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical light emitting diode and a method of manufacturing the same, and more particularly, to a vertical light emitting diode employing transparent patterns between a metal reflection layer and a compound semiconductor layer in order to reduce light loss due to internal reflection. .

In general, nitrides of Group III elements, such as gallium nitride (GaN) and aluminum nitride (AlN), have excellent thermal stability and have a direct transition energy band structure. As a lot of attention. In particular, blue and green light emitting devices using gallium nitride (GaN) have been used in various applications such as large-scale color flat panel displays, traffic lights, indoor lighting, high-density light sources, high resolution output systems and optical communication.

The nitride semiconductor layer of such a group III element, in particular GaN, is difficult to fabricate a homogeneous substrate capable of growing it, and thus, a metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy method on a heterogeneous substrate having a similar crystal structure. ; MBE) is grown through the process. A sapphire substrate having a hexagonal system structure is mainly used as a heterogeneous substrate. However, since sapphire is an electrically nonconductive material, it limits the light emitting diode structure and is very stable in terms of mechanics and chemistry, making it difficult to process such as cutting and shaping, and has low thermal conductivity. In recent years, a technology for growing a nitride semiconductor layer on a heterogeneous substrate such as sapphire and then separating the heterogeneous substrate to fabricate a vertical-type LED has been researched.

1 is a cross-sectional view illustrating a conventional vertical light emitting diode.

Referring to FIG. 1, the vertical light emitting diode includes a conductive substrate 31. Compound semiconductor layers including a first conductive semiconductor layer 15, an active layer 17, and a second conductive semiconductor layer 19 are positioned on the conductive substrate 31. In addition, a metal reflection layer 23 and an adhesive layer 27 are interposed between the compound semiconductor layers and the conductive substrate 31.

The compound semiconductor layers are generally grown on a sacrificial substrate (not shown) such as a sapphire substrate by using a metal organic chemical vapor deposition method or the like. Thereafter, a metal reflection layer 23 and an adhesive layer 27 are formed on the compound semiconductor layers, and a conductive substrate 31 is attached thereto. Subsequently, the sacrificial substrate is separated from the compound semiconductor layers by using a laser lift-off technique or the like, and the first conductivity type compound semiconductor layer 15 is exposed. Thereafter, an electrode pad 17 is formed on the exposed first conductivity type compound semiconductor layer 15. Accordingly, by adopting the conductive substrate 31 having excellent heat dissipation performance, the light emitting efficiency of the light emitting diode can be improved, and the light emitting diode of FIG. 1 having a vertical structure can be provided.

However, since the GaN-based compound semiconductor layers have a relatively high refractive index, light loss due to total internal reflection occurs at the surface of the compound semiconductor layers. Internal total reflection occurs when light incident on the surface is incident at an angle greater than the critical angle. To prevent this, techniques for making the upper surface of the compound semiconductor layers into rough surfaces have been used. However, after being reflected from the metal reflection layer, incident to the side surfaces of the compound semiconductor layers at an angle greater than the critical angle, total internal reflection may occur at the side surfaces before entering the upper surface of the compound semiconductor layers, so that light loss may occur. Is generated.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a vertical light emitting diode that can improve luminous efficiency by reducing internal reflection generated on surfaces of compound semiconductor layers.

Another object of the present invention is to provide a method of manufacturing a vertical light emitting diode that can reduce internal reflection generated on the surfaces of compound semiconductor layers.

In order to achieve the above technical problem, a vertical light emitting diode according to an aspect of the present invention includes a conductive substrate. Compound semiconductor layers are located on the conductive substrate. The compound semiconductor layers include a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer. Meanwhile, a metal reflection layer is interposed between the compound semiconductor layers and the conductive substrate. In addition, transparent patterns spaced apart from each other are interposed between the compound semiconductor layers and the metal reflection layer. The transparent patterns reduce the total internal reflection generated in the compound semiconductor layers by scattering the light incident on the metal reflection layer or changing the reflection angle of the incident light.

The transparent patterns may be formed of a conductive transparent material such as ITO or Ni / Au. In addition, the transparent patterns may include a highly reflective coating layer such as SiO 2 or TiO 2 .

In addition, each of the transparent patterns may be a hot mirror or a cold mirror having a multilayer structure. Hot mirrors reflect infrared light and transmit ultraviolet and visible light. In contrast, cold mirrors transmit infrared light and reflect ultraviolet and visible light. Therefore, when the transparent patterns are cold mirrors, infrared rays may be transmitted toward the conductive substrate to promote heat dissipation.

Meanwhile, an adhesive layer may be interposed between the metal reflection layer and the conductive substrate. The adhesive layer improves the bonding force between the conductive substrate and the metal reflection layer. In addition, a diffusion barrier layer may be interposed between the adhesive layer and the metal reflection layer. The diffusion barrier layer prevents the diffusion of metal elements from the adhesive layer or the conductive substrate to the metal reflection layer.

According to another aspect of the present invention, a method of manufacturing a vertical light emitting diode includes forming compound semiconductor layers on a sacrificial substrate. The compound semiconductor layers include a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer. A plurality of transparent patterns spaced apart from each other are formed on the compound semiconductor layers. Thereafter, a metal reflection layer is formed on the compound semiconductor layers on which the transparent patterns are formed, and a conductive substrate is formed on the metal reflection layer. Thereafter, the sacrificial substrate is separated from the compound semiconductor layers. Accordingly, a vertical light emitting diode having transparent patterns interposed between the metal reflection layer and the compound semiconductor layers may be manufactured.

Forming the transparent patterns includes forming a transparent layer on the compound semiconductor layers. The transparent layer is patterned to form a plurality of transparent patterns spaced apart from each other. The transparent layer may be a single layer or a stack of multiple layers.

The transparent patterns can also be formed using lift-off techniques. That is, a photoresist is formed using a photoresist to form a photoresist pattern having openings exposing the top surfaces of the compound semiconductor layers, and a transparent layer is formed thereon. The transparent layer fills the openings of the photoresist pattern. Then, the transparent layer filling the openings is left, and the transparent layer superimposed with the photosensitive agent is removed together with the photosensitive agent. As a result, transparent patterns corresponding to the openings are formed.

Meanwhile, before forming the conductive substrate, a diffusion barrier layer and / or an adhesive layer may be formed on the metal reflection layer. In addition, after the conductive substrate is formed, an electrode pad may be formed on the exposed surfaces of the compound semiconductor layers.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

2 is a cross-sectional view illustrating a vertical light emitting diode according to an embodiment of the present invention.

Referring to FIG. 2, compound semiconductor layers including a first conductive semiconductor layer 55, an active layer 57, and a second conductive semiconductor layer 59 are positioned on the conductive substrate 71. The conductive substrate 71 is a substrate such as Si, GaAs, GaP, AlGaINP, Ge, SiSe, GaN, AlInGaN or InGaN, but Al, Zn, Ag, W, Ti, Ni, Au, Mo, Pt, Pd, Cu It may be a single metal of Cr or Fe or an alloy thereof. Meanwhile, the compound semiconductor layers are III-N-based compound semiconductor layers, and the first conductive type and the second conductive type represent N type and P type, or P type and N type.

A metal reflection layer 63 is interposed between the compound semiconductor layers and the conductive substrate 71. The metal reflection layer 63 is formed of a metal material having a high reflectance such as silver (Ag) or aluminum (Al).

Meanwhile, transparent patterns 61 spaced apart from each other are interposed between the compound semiconductor layers and the metal reflection layer 63. The transparent patterns 61 may be formed of a conductive transparent material such as ITO or Ni / Au, but are not limited to the conductive transparent material, and may be formed of an insulating high reflection coating layer such as SiO 2 or TiO 2 . The transparent patterns 61 may have various shapes, such as a hemisphere, a semi-ellipse, a square pillar, and a truncated pyramid.

In addition, an adhesive layer 67 may be interposed between the metal reflective layer 63 and the conductive substrate 71, and a diffusion barrier layer 65 may be interposed between the adhesive layer 67 and the metal reflective layer 63. The adhesive layer 67 improves the adhesion between the conductive substrate 71 and the metal reflection layer 63 to prevent the conductive substrate 71 from being separated from the metal reflection layer 63, and the diffusion barrier layer 65 may be formed by the adhesive layer 67 or Metal elements are prevented from diffusing from the conductive substrate 71 into the metal reflection layer 63 to maintain the reflectivity of the metal reflection layer 63.

Meanwhile, the electrode pad 73 is positioned on the upper surface of the compound semiconductor layers to face the conductive substrate 71. Accordingly, light can be emitted by supplying a current through the conductive substrate 71 and the electrode pad 73.

In a conventional vertical light emitting diode, an interface between a metal reflection layer and a compound semiconductor layer forms a plane, and light generated in the compound semiconductor layers and incident on the metal reflection layer is reflected at an angle equal to the incident angle. Therefore, the light incident on the metal reflection layer is reflected according to the angle of incidence and directed to the side or top surface of the compound semiconductor layers. Some of this light is emitted to the outside through the side or top surfaces of the compound semiconductor layers, but some are totally internally reflected at the side or top surface, resulting in light loss.

However, according to the embodiment of the present invention, the light incident in the direction of the metal reflection layer 63 is scattered by the transparent patterns 61, or after passing through the transparent patterns 61, the transparent patterns 61 and the The light is incident on the upper surface of the compound semiconductor layers at an angle smaller than the incident angle incident on the transparent patterns 61 by reflecting at the interface of the metal reflective layer 63. Therefore, it is possible to reduce the total internal reflection generated at the side or top surface of the compound semiconductor layers, thereby improving the luminous efficiency of the light emitting diode.

On the other hand, the metal reflecting layer 63 has a reflectivity different according to the wavelength, and the shorter the wavelength, the lower the reflectivity. However, the highly reflective coating layer can maintain a constant reflectance regardless of the wavelength. Therefore, when the transparent patterns 61 are formed using the high reflection coating layer, the light emission efficiency may be further improved by maintaining high reflectance regardless of the wavelength.

3 to 6 are cross-sectional views illustrating a method of manufacturing a vertical light emitting diode according to an embodiment of the present invention.

Referring to FIG. 3, compound semiconductor layers are formed on the sacrificial substrate 51. The sacrificial substrate 51 may be a sapphire substrate, but is not limited thereto and may be another hetero substrate. The compound semiconductor layers include a first conductive compound semiconductor layer 55, an active layer 57, and a second conductive compound semiconductor layer 59. The compound semiconductor layers are III-N-based compound semiconductor layers, and may be grown by metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). The first conductivity type and the second conductivity type represent N-type and P-type, or P-type and N-type.

Meanwhile, before forming the compound semiconductor layers, the buffer layer 53 may be formed. The buffer layer 53 is adopted to mitigate lattice mismatch between the sacrificial substrate 51 and the compound semiconductor layers, and may generally be a gallium nitride-based material layer.

Referring to FIG. 4, transparent patterns 61 spaced apart from each other are formed on the compound semiconductor layers. The transparent patterns 61 may be formed to have various shapes such as a hemisphere, a semi-ellipse, a square pillar, or a truncated pyramid by various patterning processes.

For example, the transparent patterns 61 may be formed using a lithography technique. That is, a transparent layer (not shown) is formed on the second conductive compound semiconductor layer 59, and a photoresist pattern corresponding to the transparent patterns is formed on the transparent layer by using a lithography technique. The transparent layer may be a single layer, but is not limited thereto, and may be a laminate formed of a plurality of layers. In addition, the photoresist pattern has openings exposing the transparent layer. Subsequently, the transparent patterns are formed by etching the transparent layer using the photoresist pattern as an etching mask.

In this case, by reflowing the photoresist pattern, transparent patterns having a shape such as hemisphere, semi-ellipse or truncated pyramid may be formed.

The transparent patterns 61 may also be formed using a lift-off technique. That is, a photoresist pattern having openings exposing the top surface of the second conductivity-type semiconductor layer 59 is formed using a photoresist, and a transparent layer (not shown) is formed thereon. The transparent layer fills the openings of the photoresist pattern and is also formed on the photoresist pattern. Then, the transparent layer filling the openings is left, and the transparent layer superimposed with the photosensitive agent is removed together with the photosensitive agent. As a result, transparent patterns 61 corresponding to the openings are formed.

Referring to FIG. 5, the metal reflection layer 63 is formed on the compound semiconductor layers on which the transparent patterns 61 are formed. The metal reflection layer 63 may be formed by, for example, plating or deposition of silver (Ag) or aluminum (Al).

The conductive substrate 71 is formed on the metal reflection layer 63. The conductive substrate 61 is a substrate such as Si, GaAs, GaP, AlGaINP, Ge, SiSe, GaN, AlInGaN or InGaN, but Al, Zn, Ag, W, Ti, Ni, Au, Mo, Pt, Pd, Cu It may be formed by attaching a single metal of Cr or Fe or an alloy substrate thereof on the compound semiconductor layers. In this case, the conductive substrate 61 may be attached to the metal reflection layer 63 through an adhesive layer 67, and formed on the metal reflection layer 63 before the diffusion barrier layer 65 forms the adhesive layer 67. Can be. On the other hand, the conductive substrate 71 may be formed using a plating technique. That is, the conductive substrate 71 may be formed by plating a metal such as Cu or Ni on the metal reflection layer 63, and for improving the diffusion barrier layer 65 and / or the adhesive force for preventing the diffusion of metal elements. An adhesive layer 67 can be added.

Referring to FIG. 6, a sacrificial substrate 51 is separated from the compound semiconductor layers. The sacrificial substrate 51 may be separated by laser lift off (LLO) technology or other mechanical or chemical methods. In this case, the buffer layer 53 is also removed to expose the first conductivity type compound semiconductor layer 55. Subsequently, an electrode pad 73 is formed on the compound semiconductor layer 55. The electrode paddle 73 is ohmic contacted to the first conductivity type compound semiconductor layer 55.

According to the present embodiment, a vertical light emitting diode having transparent patterns 61 spaced apart from each other between the metal reflection layer 63 and the compound semiconductor layers is manufactured. Meanwhile, in the present embodiment, a method of manufacturing a single vertical light emitting diode has been described. In general, a plurality of vertical light emitting diodes are manufactured by cutting the conductive substrate 71 and separating them into individual LED chips. In this case, electrode pads 73 are formed on the LED chip regions, and the conductive substrate 71 is cut along predefined scribing lines.

7 is a cross-sectional view for describing a vertical light emitting diode according to another exemplary embodiment of the present invention.

Referring to FIG. 7, the vertical light emitting diode according to the present embodiment is different from the vertical light emitting diode described with reference to FIG. 2, and the transparent patterns 81 spaced apart from each other have a multilayer structure. The other components are identical.

That is, the transparent patterns 81 of the vertical light emitting diode according to the present exemplary embodiment have a multilayer structure of layers having different refractive indices, for example, SiO 2 and TiO 2 . The transparent patterns 81 may be formed by stacking a plurality of layers having different refractive indices and then patterning the layers. In this case, the transparent patterns 81 may reflect light in a desired wavelength region and transmit light having different wavelengths according to the stacked structure of the plurality of layers, the refractive index and the thickness of each material layer. That is, the transparent patterns 81 may be a hot mirror that reflects infrared rays and transmits visible and ultraviolet rays. Alternatively, a cold mirror that transmits infrared rays and reflects visible rays and ultraviolet rays may be used. Can be

When the transparent patterns 81 are hot mirrors, light emission efficiency of the infrared light emitting diodes emitting infrared rays to the outside may be further improved, and in the case of cold mirrors, infrared rays may be transmitted to the conductive substrate 71 to radiate heat. Can be promoted.

According to embodiments of the present invention, by forming transparent patterns spaced apart from each other between the metal reflection layer and the compound semiconductor layers, by reducing the light lost by total internal reflection at the surface of the compound semiconductor layers after being reflected from the metal reflection layer It is possible to provide a vertical light emitting diode capable of improving the light emitting efficiency and a method of manufacturing the same. In addition, the transparent patterns may be formed by a hot mirror or a cold mirror to provide an infrared light emitting diode or a light emitting diode having excellent heat emission performance.

Claims (10)

Conductive substrates; Compound semiconductor layers on the conductive substrate and including a first conductivity type compound semiconductor layer, an active layer, and a second conductivity type compound semiconductor layer; A metal reflection layer interposed between the compound semiconductor layers and the conductive substrate; And The vertical light emitting diode interposed between the compound semiconductor layers and the metal reflection layer, formed of a conductive transparent material, and including transparent patterns spaced apart from each other. The method according to claim 1, An adhesive layer interposed between the metal reflection layer and the conductive substrate; And And a diffusion barrier layer interposed between the adhesive layer and the metal reflection layer. The method according to claim 1 or 2, The transparent pattern is a vertical light emitting diode formed of ITO or Ni / Au. Forming compound semiconductor layers including the first conductive compound semiconductor layer, the active layer, and the second conductive compound semiconductor layer on the sacrificial substrate, Form a plurality of transparent patterns spaced apart from each other on the compound semiconductor layers, the transparent patterns are formed of a conductive transparent material, Forming a metal reflection layer on the compound semiconductor layers on which the transparent patterns are formed; Forming a conductive substrate on the metal reflection layer, And separating the sacrificial substrate from the compound semiconductor layers. The method of claim 4, And forming the transparent patterns are performed using a lift-off process. The method of claim 4, Before forming the conductive substrate, further comprising forming a diffusion barrier layer and an adhesive layer on the metal reflection layer. The method of claim 4, Forming the transparent patterns Forming a transparent layer on the compound semiconductor layers, A vertical light emitting diode manufacturing method comprising patterning the transparent layer. The method of claim 7, The transparent layer is a stack of vertical light emitting diode manufacturing method of a plurality of layers. The method according to any one of claims 4 to 7, The transparent pattern is a method of manufacturing a vertical light emitting diode is formed of ITO or Ni / Au. delete
KR1020060092827A 2006-09-25 2006-09-25 Vertical light emitting diode and method of fabricating the same KR101229834B1 (en)

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Publication number Priority date Publication date Assignee Title
KR100982988B1 (en) * 2008-05-14 2010-09-17 삼성엘이디 주식회사 Vertical semiconductor light emitting device and manufacturing method of the same
KR101210172B1 (en) * 2009-03-02 2012-12-07 엘지이노텍 주식회사 Light emitting device
KR101667816B1 (en) * 2010-02-18 2016-10-28 엘지이노텍 주식회사 Light emitting device, method for fabricating the same, light emitting device package, and lighting system including the same
KR101667815B1 (en) * 2010-02-18 2016-10-19 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device and light emitting device package
KR20110096680A (en) 2010-02-23 2011-08-31 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device and light emitting device package
CN102738331A (en) * 2011-04-08 2012-10-17 新世纪光电股份有限公司 Vertical light-emitting diode structure and method for manufacturing the same
TWI604632B (en) * 2013-04-25 2017-11-01 晶元光電股份有限公司 Light emitting device

Citations (2)

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Publication number Priority date Publication date Assignee Title
WO2003052838A2 (en) 2001-12-13 2003-06-26 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
KR100723249B1 (en) * 2006-02-22 2007-05-29 삼성전기주식회사 Vertical nitride semiconductor light emitting diode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003052838A2 (en) 2001-12-13 2003-06-26 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
KR100723249B1 (en) * 2006-02-22 2007-05-29 삼성전기주식회사 Vertical nitride semiconductor light emitting diode

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