KR101229834B1 - Vertical light emitting diode and method of fabricating the same - Google Patents
Vertical light emitting diode and method of fabricating the same Download PDFInfo
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- KR101229834B1 KR101229834B1 KR1020060092827A KR20060092827A KR101229834B1 KR 101229834 B1 KR101229834 B1 KR 101229834B1 KR 1020060092827 A KR1020060092827 A KR 1020060092827A KR 20060092827 A KR20060092827 A KR 20060092827A KR 101229834 B1 KR101229834 B1 KR 101229834B1
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Abstract
A vertical light emitting diode and a method of manufacturing the same are disclosed. This light emitting diode includes a conductive substrate. Compound semiconductor layers are located on the conductive substrate. The compound semiconductor layers include a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer. Meanwhile, a metal reflective layer is interposed between the compound semiconductor layers and the conductive substrate, and transparent patterns spaced apart from each other are interposed between the compound semiconductor layers and the metal reflective layer. The transparent patterns reduce light loss due to internal reflection by scattering light incident on the metal reflection layer.
Vertical LEDs, total internal reflection, reflective layers, conductive substrates
Description
1 is a cross-sectional view illustrating a vertical light emitting diode according to the prior art.
2 is a cross-sectional view illustrating a vertical light emitting diode according to an embodiment of the present invention.
3 to 6 are cross-sectional views illustrating a method of manufacturing a vertical light emitting diode according to an embodiment of the present invention.
7 is a cross-sectional view for describing a vertical light emitting diode according to another exemplary embodiment of the present invention.
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical light emitting diode and a method of manufacturing the same, and more particularly, to a vertical light emitting diode employing transparent patterns between a metal reflection layer and a compound semiconductor layer in order to reduce light loss due to internal reflection. .
In general, nitrides of Group III elements, such as gallium nitride (GaN) and aluminum nitride (AlN), have excellent thermal stability and have a direct transition energy band structure. As a lot of attention. In particular, blue and green light emitting devices using gallium nitride (GaN) have been used in various applications such as large-scale color flat panel displays, traffic lights, indoor lighting, high-density light sources, high resolution output systems and optical communication.
The nitride semiconductor layer of such a group III element, in particular GaN, is difficult to fabricate a homogeneous substrate capable of growing it, and thus, a metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy method on a heterogeneous substrate having a similar crystal structure. ; MBE) is grown through the process. A sapphire substrate having a hexagonal system structure is mainly used as a heterogeneous substrate. However, since sapphire is an electrically nonconductive material, it limits the light emitting diode structure and is very stable in terms of mechanics and chemistry, making it difficult to process such as cutting and shaping, and has low thermal conductivity. In recent years, a technology for growing a nitride semiconductor layer on a heterogeneous substrate such as sapphire and then separating the heterogeneous substrate to fabricate a vertical-type LED has been researched.
1 is a cross-sectional view illustrating a conventional vertical light emitting diode.
Referring to FIG. 1, the vertical light emitting diode includes a
The compound semiconductor layers are generally grown on a sacrificial substrate (not shown) such as a sapphire substrate by using a metal organic chemical vapor deposition method or the like. Thereafter, a
However, since the GaN-based compound semiconductor layers have a relatively high refractive index, light loss due to total internal reflection occurs at the surface of the compound semiconductor layers. Internal total reflection occurs when light incident on the surface is incident at an angle greater than the critical angle. To prevent this, techniques for making the upper surface of the compound semiconductor layers into rough surfaces have been used. However, after being reflected from the metal reflection layer, incident to the side surfaces of the compound semiconductor layers at an angle greater than the critical angle, total internal reflection may occur at the side surfaces before entering the upper surface of the compound semiconductor layers, so that light loss may occur. Is generated.
SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a vertical light emitting diode that can improve luminous efficiency by reducing internal reflection generated on surfaces of compound semiconductor layers.
Another object of the present invention is to provide a method of manufacturing a vertical light emitting diode that can reduce internal reflection generated on the surfaces of compound semiconductor layers.
In order to achieve the above technical problem, a vertical light emitting diode according to an aspect of the present invention includes a conductive substrate. Compound semiconductor layers are located on the conductive substrate. The compound semiconductor layers include a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer. Meanwhile, a metal reflection layer is interposed between the compound semiconductor layers and the conductive substrate. In addition, transparent patterns spaced apart from each other are interposed between the compound semiconductor layers and the metal reflection layer. The transparent patterns reduce the total internal reflection generated in the compound semiconductor layers by scattering the light incident on the metal reflection layer or changing the reflection angle of the incident light.
The transparent patterns may be formed of a conductive transparent material such as ITO or Ni / Au. In addition, the transparent patterns may include a highly reflective coating layer such as SiO 2 or TiO 2 .
In addition, each of the transparent patterns may be a hot mirror or a cold mirror having a multilayer structure. Hot mirrors reflect infrared light and transmit ultraviolet and visible light. In contrast, cold mirrors transmit infrared light and reflect ultraviolet and visible light. Therefore, when the transparent patterns are cold mirrors, infrared rays may be transmitted toward the conductive substrate to promote heat dissipation.
Meanwhile, an adhesive layer may be interposed between the metal reflection layer and the conductive substrate. The adhesive layer improves the bonding force between the conductive substrate and the metal reflection layer. In addition, a diffusion barrier layer may be interposed between the adhesive layer and the metal reflection layer. The diffusion barrier layer prevents the diffusion of metal elements from the adhesive layer or the conductive substrate to the metal reflection layer.
According to another aspect of the present invention, a method of manufacturing a vertical light emitting diode includes forming compound semiconductor layers on a sacrificial substrate. The compound semiconductor layers include a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer. A plurality of transparent patterns spaced apart from each other are formed on the compound semiconductor layers. Thereafter, a metal reflection layer is formed on the compound semiconductor layers on which the transparent patterns are formed, and a conductive substrate is formed on the metal reflection layer. Thereafter, the sacrificial substrate is separated from the compound semiconductor layers. Accordingly, a vertical light emitting diode having transparent patterns interposed between the metal reflection layer and the compound semiconductor layers may be manufactured.
Forming the transparent patterns includes forming a transparent layer on the compound semiconductor layers. The transparent layer is patterned to form a plurality of transparent patterns spaced apart from each other. The transparent layer may be a single layer or a stack of multiple layers.
The transparent patterns can also be formed using lift-off techniques. That is, a photoresist is formed using a photoresist to form a photoresist pattern having openings exposing the top surfaces of the compound semiconductor layers, and a transparent layer is formed thereon. The transparent layer fills the openings of the photoresist pattern. Then, the transparent layer filling the openings is left, and the transparent layer superimposed with the photosensitive agent is removed together with the photosensitive agent. As a result, transparent patterns corresponding to the openings are formed.
Meanwhile, before forming the conductive substrate, a diffusion barrier layer and / or an adhesive layer may be formed on the metal reflection layer. In addition, after the conductive substrate is formed, an electrode pad may be formed on the exposed surfaces of the compound semiconductor layers.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.
2 is a cross-sectional view illustrating a vertical light emitting diode according to an embodiment of the present invention.
Referring to FIG. 2, compound semiconductor layers including a first
A
Meanwhile,
In addition, an
Meanwhile, the
In a conventional vertical light emitting diode, an interface between a metal reflection layer and a compound semiconductor layer forms a plane, and light generated in the compound semiconductor layers and incident on the metal reflection layer is reflected at an angle equal to the incident angle. Therefore, the light incident on the metal reflection layer is reflected according to the angle of incidence and directed to the side or top surface of the compound semiconductor layers. Some of this light is emitted to the outside through the side or top surfaces of the compound semiconductor layers, but some are totally internally reflected at the side or top surface, resulting in light loss.
However, according to the embodiment of the present invention, the light incident in the direction of the
On the other hand, the
3 to 6 are cross-sectional views illustrating a method of manufacturing a vertical light emitting diode according to an embodiment of the present invention.
Referring to FIG. 3, compound semiconductor layers are formed on the
Meanwhile, before forming the compound semiconductor layers, the
Referring to FIG. 4,
For example, the
In this case, by reflowing the photoresist pattern, transparent patterns having a shape such as hemisphere, semi-ellipse or truncated pyramid may be formed.
The
Referring to FIG. 5, the
The
Referring to FIG. 6, a
According to the present embodiment, a vertical light emitting diode having
7 is a cross-sectional view for describing a vertical light emitting diode according to another exemplary embodiment of the present invention.
Referring to FIG. 7, the vertical light emitting diode according to the present embodiment is different from the vertical light emitting diode described with reference to FIG. 2, and the
That is, the
When the
According to embodiments of the present invention, by forming transparent patterns spaced apart from each other between the metal reflection layer and the compound semiconductor layers, by reducing the light lost by total internal reflection at the surface of the compound semiconductor layers after being reflected from the metal reflection layer It is possible to provide a vertical light emitting diode capable of improving the light emitting efficiency and a method of manufacturing the same. In addition, the transparent patterns may be formed by a hot mirror or a cold mirror to provide an infrared light emitting diode or a light emitting diode having excellent heat emission performance.
Claims (10)
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KR1020060092827A KR101229834B1 (en) | 2006-09-25 | 2006-09-25 | Vertical light emitting diode and method of fabricating the same |
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KR1020060092827A KR101229834B1 (en) | 2006-09-25 | 2006-09-25 | Vertical light emitting diode and method of fabricating the same |
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KR20080027584A KR20080027584A (en) | 2008-03-28 |
KR101229834B1 true KR101229834B1 (en) | 2013-02-04 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100982988B1 (en) * | 2008-05-14 | 2010-09-17 | 삼성엘이디 주식회사 | Vertical semiconductor light emitting device and manufacturing method of the same |
KR101210172B1 (en) * | 2009-03-02 | 2012-12-07 | 엘지이노텍 주식회사 | Light emitting device |
KR101667816B1 (en) * | 2010-02-18 | 2016-10-28 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the same, light emitting device package, and lighting system including the same |
KR101667815B1 (en) * | 2010-02-18 | 2016-10-19 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
KR20110096680A (en) | 2010-02-23 | 2011-08-31 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
CN102738331A (en) * | 2011-04-08 | 2012-10-17 | 新世纪光电股份有限公司 | Vertical light-emitting diode structure and method for manufacturing the same |
TWI604632B (en) * | 2013-04-25 | 2017-11-01 | 晶元光電股份有限公司 | Light emitting device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2003052838A2 (en) | 2001-12-13 | 2003-06-26 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
KR100723249B1 (en) * | 2006-02-22 | 2007-05-29 | 삼성전기주식회사 | Vertical nitride semiconductor light emitting diode |
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Publication number | Priority date | Publication date | Assignee | Title |
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WO2003052838A2 (en) | 2001-12-13 | 2003-06-26 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
KR100723249B1 (en) * | 2006-02-22 | 2007-05-29 | 삼성전기주식회사 | Vertical nitride semiconductor light emitting diode |
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