CN113871467A - 一种肖特基二极管及其制造方法 - Google Patents
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Abstract
本发明公开了一种肖特基二极管及其制造方法，所述二极管包括：衬底；制作于所述衬底一侧的外延层；制作于所述外延层一侧的P型保护环；制作于所述外延层一侧的氧化层，从器件边缘延伸到引线窗口边缘位置；制作于所述引线窗口一侧的势垒金属；制作于所述氧化层和势垒金属上的多层金属结构一，从P型保护环外侧向内侧覆盖；制作于所述多层金属结构一外侧的多层金属结构二，从多层金属结构一外层向内侧覆盖，中心区域露出多层金属结构一窗口；制作于所述多层金属结构二外侧钝化薄膜，从多层金属结构二外层向内覆盖，止于向内侧100um距离，本发明的肖特基二极管能够解决贴片烧结封装的肖特基二极管存在的PCT、金属迁移和焊料偏移导致的失效风险。
Description
技术领域
本发明涉及功率半导体器件制造领域，具体地，涉及一种肖特基二极管及其制造方法。
背景技术
现有技术通常采用钝化层薄膜保护肖特基二极管，目前钝化层多采用氮化硅、氮氧化硅、聚酰亚胺、玻璃、磷硅玻璃等结构。
金属铝表面粗糙度较高，和钝化薄膜的结合能力好，但金属银表面的钝化层覆盖难度较大，氮化硅在金属银表面附着能力差，易出现钝化层薄膜脱落问题。聚酰亚胺热膨胀系数比氮化硅大的多，在高温过程中易引入内部应力问题，同时烧结过程中易转化为玻璃态，迸溅在聚酰亚胺上的焊锡无法清洗。
在烧结封装过程中易发生框架和正面金属错位偏移，如偏移框架焊接在芯片终端位置，长期工作过程存在器件短路或漏电大失效风险。
因此，需要解决贴片烧结封装的肖特基二极管存在的PCT、金属迁移和焊料偏移导致的失效风险。
发明内容
为克服上述现有技术的不足，本发明提供了一种肖特基二极管及其制造方法，本发明采用的技术方案是：
一种肖特基二极管及其制造方法，所述二极管包括：
衬底；
制作于所述衬底一侧的外延层；
制作于所述外延层一侧的P型保护环；
制作于所述外延层一侧的氧化层，从器件边缘延伸到引线窗口边缘位置；
制作于所述引线窗口一侧的势垒金属；
制作于所述氧化层和势垒金属上的多层金属结构一，从P型保护环外侧向内侧覆盖；
制作于所述多层金属结构一外侧的多层金属结构二，从多层金属结构一外层向内侧覆盖，中心区域露出多层金属结构一窗口；
制作于所述多层金属结构二外侧钝化薄膜，从多层金属结构二外层向内覆盖，止于向内侧100um距离。
优选地，所述外延层和衬底从上到下分别为N-和N+结构，N-结构电阻率依据产品电压范围确定。
优选地，所述多层金属结构二中心腐蚀露出多层金属结构一。
优选地，所述多层金属结构一在本结构中外层金属为金属银。
优选地，所述多层金属结构二分为内层金属和外层金属，在本结构中外层金属为金属铝，内层金属用来黏附多层金属结构一。
优选地，所述钝化薄膜选用氮化硅。
本发明的有益效果为：
本发明能够解决银表面氮化硅钝化层黏附力差导致的钝化层脱落，或银表面使用聚酰亚胺作为钝化层在烧结过程的锡珠嵌入和热膨胀系数偏大带来的高温参漏电问题，能够有效阻挡水汽和可动离子对于产品的影响，防止银离子迁移和烧结框架偏移带来的失效风险，提升产品的可靠性能力。
附图说明
图1为实施例1的示意图；
图2为实施例2的示意图；
图中所示附图标记为：101-衬底、102-外延层、103-氧化层、104-P型保护环结构、105-肖特基势垒结构、106-多层金属结构一、107-多层金属结构二、108-钝化薄膜、109-背面金属。
具体实施方式
以下结合附图对本设计方案进行详细说明。
一种肖特基二极管及其制造方法，所述二极管包括：
衬底101；
制作于衬底101一侧的外延层102；
制作于外延层102一侧的P型保护环；
制作于外延层102一侧的氧化层103，从器件边缘延伸到引线窗口边缘位置；
制作于引线窗口一侧的势垒金属；
制作于氧化层103和势垒金属上的多层金属结构一106，从P型保护环外侧向内侧覆盖；
制作于多层金属结构一106外侧的多层金属结构二107，从多层金属结构一106外层向内侧覆盖，中心区域露出多层金属结构一106窗口；
制作于多层金属结构二107外侧钝化薄膜108，从多层金属结构二107外层向内覆盖，止于向内侧100um距离。
其中，外延层102和衬底101从上到下分别为N-和N+结构，N-结构电阻率依据产品电压范围确定。
其中，多层金属结构二107中心腐蚀露出多层金属结构一106，使得固定焊盘面形成内侧凹坑结构，在贴片封装焊膏烧结融化过程中，正面框架能够自定位芯片中心区域，起到焊接和连接芯片的作用，防止焊接位置偏移导致芯片存在内应力，导致产品漏电超标。
其中，多层金属结构一106在本结构中外层金属为金属银，金属银保证贴片外形烧结过程中，和框架能够充分焊接结合。
其中，多层金属结构二107分为内层金属和外层金属，在本结构中外层金属为金属铝，内层金属用来黏附多层金属结构一106，金属铝在烧结过程中和焊锡不浸润，防止烧结焊锡迸溅和附着，同时可阻挡多层金属结构一106的银离子的迁移。
其中，钝化薄膜108选用氮化硅，氮化硅可起到耐酸碱腐蚀、阻挡水汽和可动离子的作用。
实施例1
如图1所示，外延层102制作于衬底101的一侧，衬底材料可以是硅、碳化硅、蓝宝石、氮化镓或氮化铝的一种。
氧化层103制作于外延层102一侧。
在氧化层103表面涂覆光刻胶，经过光刻掩膜，在氧化层103表面腐蚀出P型保护环注入窗口。
经过离子注入和高温扩散，形成P型保护环结构104。
再次在氧化层103表面涂覆光刻胶，经过光刻掩膜，在氧化层103表面腐蚀出引线窗口图形。
使用溅射方法在引线孔区域溅射势垒金属，经过高温合金形成肖特基势垒结构105。
在肖特基势垒结构105上使用蒸发工艺，形成多层金属结构一106，最外层金属为银。
在多层金属结构一106表面涂覆光刻胶，经过光刻掩膜，在多层金属结构一106表面腐蚀去掉焊接区域以外的金属。
在多层金属结构一106表面使用蒸发工艺，形成多层金属结构二107，其最外层金属为铝。
在多层金属结构二107表面涂覆光刻胶，经过光刻掩膜，在多层金属结构二107表面腐蚀，中心焊接区域露出多层金属结构一106，保证封装烧结过程中焊膏融化时，正面框架和芯片中心位置保持对准。同时多层金属结构一106外层边缘被多层金属结构二107覆盖，多层金属结构二107外侧露出氧化层。
在多层金属结构二107表面使用PECVD方法淀积一层氮化硅的钝化薄膜108。
在钝化薄膜108表面涂覆光刻胶，经过光刻掩膜，在钝化薄膜108表面腐蚀，钝化薄膜108外侧露出氧化层，覆盖多层金属结构二107外侧边缘，钝化薄膜108向内侧延伸100um。
再接着，在衬底101相反方向一侧做衬底减薄处理，将芯片减薄到要求厚度。
使用蒸发工艺，在衬底101减薄一侧蒸发背面金属109做为背面电极。
实施例2
如图2所示，本实施例为在实施例1的基础上，缩短了多层金属结构一106的边缘长度，延长多层金属结构一106和芯片边缘距离，减小了多层金属结构一106金属银离子向外迁移的可能性。
Claims (6)
1.一种肖特基二极管及其制造方法，其特征在于，所述二极管包括：
衬底；
制作于所述衬底一侧的外延层；
制作于所述外延层一侧的P型保护环；
制作于所述外延层一侧的氧化层，从器件边缘延伸到引线窗口边缘位置；
制作于所述引线窗口一侧的势垒金属；
制作于所述氧化层和势垒金属上的多层金属结构一，从P型保护环外侧向内侧覆盖；
制作于所述多层金属结构一外侧的多层金属结构二，从多层金属结构一外层向内侧覆盖，中心区域露出多层金属结构一窗口；
制作于所述多层金属结构二外侧钝化薄膜，从多层金属结构二外层向内覆盖，止于向内侧100um距离。
2.根据权利要求1所述的一种肖特基二极管及其制造方法，其特征在于，所述外延层和衬底从上到下分别为N-和N+结构，N-结构电阻率依据产品电压范围确定。
3.根据权利要求1所述的一种肖特基二极管及其制造方法，其特征在于，所述多层金属结构二中心腐蚀露出多层金属结构一。
4.根据权利要求1所述的一种肖特基二极管及其制造方法，其特征在于，所述多层金属结构一在本结构中外层金属为金属银。
5.根据权利要求1所述的一种肖特基二极管及其制造方法，其特征在于，所述多层金属结构二分为内层金属和外层金属，在本结构中外层金属为金属铝，内层金属用来黏附多层金属结构一。
6.根据权利要求1所述的一种肖特基二极管及其制造方法，其特征在于，所述钝化薄膜选用氮化硅。
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