CN113838816B - Preparation method of gallium nitride-based diode device with diamond passivation layer - Google Patents
Preparation method of gallium nitride-based diode device with diamond passivation layer Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 206
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 182
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 96
- 239000010432 diamond Substances 0.000 title claims abstract description 96
- 238000002161 passivation Methods 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 230000007704 transition Effects 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000001259 photo etching Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 213
- 238000005516 engineering process Methods 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 238000011282 treatment Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000002113 nanodiamond Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Abstract
The invention discloses a preparation method of a gallium nitride-based diode device with a diamond passivation layer, which comprises the following steps: firstly, combining an undoped intrinsic gallium nitride wafer with a diamond substrate, and sequentially epitaxially growing an n-type gallium nitride layer and a transitional medium layer on the front surface of the intrinsic gallium nitride wafer; then, the transition medium layer is processed to form a graphical n-type gallium nitride layer concave table top; then sequentially epitaxially growing an intrinsic gallium nitride layer or a quantum well layer structure, a p-type gallium nitride layer, a dielectric protection layer and a diamond passivation layer on the surface of the exposed n-type gallium nitride layer; and finally, forming p-type and n-type metal electrodes on the p-type gallium nitride layer and the n-type gallium nitride layer through photoetching, developing, etching, film deposition and other processes, thereby obtaining the gallium nitride-based diode with the diamond substrate and the passivation layer. The obtained product meets the high heat dissipation requirement of a gallium nitride-based high-frequency high-power device, and simultaneously reduces the surface leakage current and radiation resistance of the gallium nitride-based detector device.
Description
Technical Field
The invention relates to a preparation method of a gallium nitride-based diode device with a diamond passivation layer, belonging to the technical field of electronic materials and devices.
Background
The wide-bandgap gallium nitride-based semiconductor material has excellent performances of high saturated electron mobility, high breakdown field strength, good physical and chemical stability, strong spontaneous polarization effect and the like, so that the wide-bandgap gallium nitride-based semiconductor material becomes the first choice in the third-generation semiconductor material, and is widely applied to microelectronic materials and devices such as pn junction diodes and the like, such as power diodes, light-emitting diodes, laser diodes, heterojunction transistors and the like. However, the gallium nitride-based diode device is often limited due to the problems of device structural design and manufacturing, interface defects of gallium nitride material surfaces and the like in the application process, so that the electrical performance and reliability of the gallium nitride-based diode device are reduced, and the high-frequency, high-temperature and high-power application performance of the gallium nitride-based diode device is affected.
The epitaxial substrate of the gallium nitride-based device commonly used at present mainly uses materials such as silicon carbide, sapphire, silicon and the like, and in the GaN-based light emitting diode with an epitaxial structure and a preparation method thereof (CN 201010622204.0), the sapphire substrate is exposed through a graphical substrate technology and an epitaxial technology, so that the light-emitting efficiency is improved, but the method is obviously limited due to low heat conductivity of the sapphire substrate in a high-power light emitting device, and the light-emitting efficiency is affected. Diamond is the material with the highest heat conductivity (up to 2200W m -1 ·K -1 ) The Chinese patent CN201610479524.2 discloses a simple preparation method of a p-type nano diamond film/n-type GaN heterojunction with an electrode, which has good rectification characteristic, however, the method is to directly grow the nano diamond film on a gallium nitride substrate, high-temperature plasma in the growth process can damage the gallium nitride wafer substrate, and the diamond film and gallium nitride have lower interface bonding strength, so that the electrical performance of a heterogeneous pn junction device is affected. In addition, the surface passivation layer structure has obvious improvement effect on the two-dimensional electron gas and the surface leakage current of the gallium nitride-based device. Thus, a gallium nitride-based diode having a diamond substrate and a passivation layer was developed for reducing gallium nitride-based devicesThe interface thermal resistance has important significance in improving the application and reliability of the photoelectric device.
Disclosure of Invention
The invention aims to provide a gallium nitride-based diode device with a diamond passivation layer and a preparation method thereof, and by utilizing the characteristics of high heat conduction performance, high hard wear resistance, high chemical stability, rough growth surface structure and the like of diamond, the heat dissipation effect and the surface state characteristics of the gallium nitride-based power device are improved by designing and optimizing the structures of a diamond substrate, the passivation layer and a gallium nitride semiconductor, so that the gallium nitride-based diode with the diamond substrate and the passivation layer with high quality is obtained.
On the basis of keeping the structure and performance of the gallium nitride-based diode, the structure and composition of the diamond substrate, the passivation layer, the intermediate dielectric layer and the functional layer (the intrinsic semiconductor layer or the quantum well layer) are designed and optimized in the gallium nitride-based device by utilizing the characteristics of the diamond material such as high heat conduction performance, high hardness and wear resistance, good chemical stability and rough growth surface structure, so that the interface thermal resistance can be reduced, the heat dissipation effect of the gallium nitride-based high-power device can be improved, defect dislocation in the surface or interface of the p-type gallium nitride layer can be reduced by introducing the diamond passivation layer, the surface state characteristics of the p-type gallium nitride-based high-power device can be improved, the surface leakage current and radiation resistance of the gallium nitride-based diode serving as a detector device can be reduced, and meanwhile, the method plays a role in wear-resistant and corrosion-resistant protection on the gallium nitride-based device, and is of great significance in improving the service performance and application popularization of the gallium nitride-based diode device.
The invention provides a preparation method of a gallium nitride-based diode device with a diamond passivation layer, which combines the back surface of an undoped intrinsic gallium nitride wafer with a diamond substrate, and sequentially epitaxially grows an n-type gallium nitride layer and a transition medium layer on the front surface of the intrinsic gallium nitride wafer; carrying out photoetching, developing, corrosion and other process treatments on the transition medium layer to form a graphical n-type gallium nitride layer concave table top; sequentially epitaxially growing an intrinsic gallium nitride layer or a quantum well layer structure, a p-type gallium nitride layer, a dielectric protection layer and a diamond passivation layer on the surface of the n-type gallium nitride layer; and forming p-type and n-type metal electrodes on the p-type gallium nitride layer and the n-type gallium nitride layer respectively, thereby obtaining the gallium nitride-based diode with the diamond substrate and the passivation layer.
The preparation method of the gallium nitride-based diode device with the diamond passivation layer specifically comprises the following steps:
(1) Combining the back surface of the undoped intrinsic gallium nitride wafer with the diamond substrate to obtain an intrinsic gallium nitride wafer taking diamond as a substrate;
(2) Doping and epitaxially growing an n-type gallium nitride layer on the surface of an intrinsic gallium nitride wafer taking diamond as a substrate by adopting a metal organic chemical vapor deposition technology;
(3) Depositing a transition medium layer on the surface of the n-type gallium nitride layer by plasma enhanced chemical vapor deposition, electron beam evaporation, pulse laser melting and other technologies;
(4) Carrying out conventional photoetching, developing, wet etching or dry etching and other process treatments on the transition medium layer in sequence to form a patterned n-type gallium nitride layer table top;
(5) Sequentially epitaxially growing an intrinsic gallium nitride layer or a quantum well layer structure and a p-type gallium nitride layer on the surface of the exposed n-type gallium nitride layer by adopting a metal organic chemical vapor deposition technology;
(6) Removing the residual transition medium layer, and sequentially depositing a medium protection layer and a diamond passivation layer on the surface of the p-type gallium nitride layer from bottom to top;
(7) Forming p-type and n-type electrode regions on the p-type gallium nitride layer and the n-type gallium nitride layer sequentially through conventional photoetching, developing, wet etching or dry etching and other processes;
(8) And depositing a metal multilayer film in the p-type and n-type electrode areas by adopting technologies such as electron beam evaporation or magnetron sputtering, stripping the p-type and n-type metal electrodes, and finally carrying out protective atmosphere annealing treatment on the metal electrodes to obtain the gallium nitride-based diode device with the diamond substrate and the passivation layer.
In the above preparation method, in the step (1), the bonding mode of gallium nitride and diamond includes bonding, heteroepitaxial growth, etc., the gallium nitride wafer includes a self-supporting gallium nitride wafer or a sapphire-based gallium nitride thick film wafer, and the diamond substrate includes a diamond self-supporting polycrystalline film or a diamond single wafer;
in the above preparation method, in the step (2), the doping element is phosphorus or silicon, the thickness of the n-type gallium nitride layer is 2-20 μm, and the electron concentration is 10 18 ~10 21 cm -3 ；
In the preparation method, in the step (3), the transition dielectric layer film comprises an etching mask layer with a single-layer or multi-layer structure of silicon oxide, silicon nitride, nickel and the like, and the thickness is 100-800 nm;
in the preparation method, in the step (4), the transition medium layer is etched to expose the round or square top surface of the middle part of the n-type gallium nitride layer;
in the preparation method, in the step (5), the thickness of the intrinsic gallium nitride layer is 5-20 mu m, and the thickness of the quantum well layer is 10-100 nm; the doped element of the p-type gallium nitride layer is magnesium, the thickness is 200-800 nm, and the hole concentration is 10 15 ~10 18 cm -3 ；
In the above preparation method, in the step (6), the dielectric protective layer comprises one of silicon nitride, silicon oxide, silicon oxynitride and aluminum nitride film, and the preparation method comprises plasma enhanced chemical vapor deposition, electron beam evaporation, laser melting evaporation or magnetron sputtering technology; the preparation method of the diamond passivation layer comprises the microwave plasma chemical vapor deposition or hot filament chemical vapor deposition technology; the protective thickness of the dielectric layer is 50-500 nm, and the thickness of the diamond layer is 200-800 nm;
in the preparation method, in the step (8), the metal electrode material comprises titanium/platinum/gold, titanium/aluminum/gold, chromium/platinum/Jin Duoceng thin films, and the thickness of the multilayer film electrode is 1-10 mu m; the protective atmosphere is argon or nitrogen, and the annealing temperature is 300-800 ℃.
The beneficial effects of the invention are as follows:
(1) On the basis of keeping the structure and the performance of the gallium nitride-based diode, the high-heat-conductivity diamond substrate material is introduced, so that the interface thermal resistance of the gallium nitride-based device can be reduced, and the heat dissipation effect and the service performance of the gallium nitride-based device in application are improved.
(2) The invention introduces the diamond passivation layer into the gallium nitride-based device, is beneficial to reducing defect dislocation on the surface or in the interface of the p-type gallium nitride layer, improves the surface state characteristics of the p-type gallium nitride layer, reduces the surface leakage current and radiation resistance of the gallium nitride-based diode serving as a detector device, and has important significance for improving the performance of the gallium nitride-based diode device.
(3) The diamond passivation layer on the surface of the gallium nitride-based diode device has the functions of wear resistance, corrosion resistance and protection.
Drawings
FIG. 1 is a schematic illustration of a diamond substrate bonded to an intrinsic gallium nitride wafer;
FIG. 2 is a schematic diagram of an epitaxial growth of an n-type GaN layer on an intrinsic GaN wafer;
FIG. 3 is a schematic diagram of a deposition transition dielectric layer on the surface of an n-type GaN layer;
FIG. 4 is a schematic diagram of a patterned n-type GaN layer mesa formed on the surface of the transition dielectric layer;
FIG. 5 is a schematic diagram of an n-type GaN layer mesa epitaxially grown intrinsic GaN layer or quantum well layer structure, p-type GaN layer;
FIG. 6 is a schematic diagram of the sequential deposition of a dielectric protective layer and a diamond passivation layer on the surface of a p-type gallium nitride layer;
FIG. 7 is a schematic illustration of the formation of p-type and n-type electrode regions on a p-type GaN layer and an n-type GaN layer;
fig. 8 is a schematic illustration of the formation of p-type and n-type metal electrodes on p-type and n-type gallium nitride layers.
In the figure: 1. a diamond substrate; 2. a binding medium; 3. an intrinsic gallium nitride wafer; 4. an n-type gallium nitride layer; 5. a transition medium layer; 6. an intrinsic gallium nitride layer or quantum well layer structure; 7. a p-type gallium nitride layer; 8. a dielectric protective layer; 9. a diamond passivation layer; 10. an n-type electrode region; 11. a p-type electrode region; 12. an n-type metal electrode; 13. a p-type metal electrode.
Detailed Description
The invention relates to a preparation method of a gallium nitride-based diode device with a diamond passivation layer, which specifically comprises the following steps:
(1) The back surface of the undoped intrinsic gallium nitride wafer 3 and the diamond substrate 1 are bonded through the bonding medium 2, and the intrinsic gallium nitride wafer with diamond as a substrate is obtained. In the step (1), the combination mode of gallium nitride and diamond comprises bonding, heteroepitaxial growth and other methods, the gallium nitride wafer comprises a self-supporting gallium nitride wafer or a sapphire-based gallium nitride thick film wafer, and the diamond substrate comprises a diamond self-supporting polycrystalline film or a diamond monocrystal;
(2) An n-type gallium nitride layer 4 is epitaxially grown on the surface of an intrinsic gallium nitride wafer 3 using diamond as a substrate 1 by doping by adopting a metal organic chemical vapor deposition technology. In the step (2), the doping element is phosphorus or silicon, the thickness of the n-type gallium nitride layer is 2-20 mu m, and the electron concentration is 10 18 ~10 21 cm -3 ；
(3) And depositing a transition medium layer 5 on the surface of the n-type gallium nitride layer 4 by plasma enhanced chemical vapor deposition, electron beam evaporation, pulse laser melting and other technologies. In the step (3), the thin film of the transition medium layer 4 comprises an etching mask layer with a single-layer or multi-layer structure of silicon oxide, silicon nitride, nickel and the like, and the thickness is 100-800 nm.
(4) And carrying out conventional photoetching, developing, wet etching/dry etching and other process treatment on the transition dielectric layer 5 to form a patterned n-type gallium nitride layer mesa. In the step (4), the transition medium layer is etched to expose the round or square top surface of the middle part of the n-type gallium nitride layer.
(5) And sequentially epitaxially growing an intrinsic gallium nitride layer or a quantum well layer junction 6 and a p-type gallium nitride layer 7 on the surface of the exposed n-type gallium nitride layer 4 by adopting a metal organic chemical vapor deposition technology, and removing the residual transition medium layer. In the step (5), the thickness of the intrinsic gallium nitride layer is 5-20 mu m, and the thickness of the quantum well layer is 10-100 nm; the doped element of the p-type gallium nitride layer is magnesium, the thickness is 200-800 nm, and the hole concentration is 10 15 ~10 18 cm -3 。
(6) And a dielectric protection layer 8 and a diamond passivation layer 9 are sequentially deposited on the surface of the p-type gallium nitride layer from bottom to top. In the step (6), the dielectric protective layer comprises silicon nitride, silicon oxide, silicon oxynitride and aluminum nitride film, and the preparation method comprises plasma enhanced chemical vapor deposition, electron beam evaporation, laser melting evaporation or magnetron sputtering technology; the preparation method of the diamond passivation layer comprises the microwave plasma chemical vapor deposition or hot filament chemical vapor deposition technology; the protective thickness of the dielectric layer is 50-500 nm, and the thickness of the diamond layer is 200-800 nm.
(7) The p-type electrode region 11 and the n-type electrode region 10 are formed on the p-type gallium nitride layer and the n-type gallium nitride layer by conventional photolithography, development, wet etching/dry etching, and the like.
(8) And depositing a metal multilayer film in the p-type and n-type electrode areas by adopting technologies such as electron beam evaporation or magnetron sputtering, stripping the p-type metal electrode 13 and the n-type metal electrode 12, and finally carrying out protective atmosphere annealing treatment on the metal electrode to obtain the gallium nitride-based diode device with the diamond passivation layer. In the step (8), the metal electrode material comprises titanium/platinum/gold, titanium/aluminum/gold, chromium/platinum/Jin Duoceng thin films, and the thickness of the multilayer film electrode is 1-10 mu m; the protective atmosphere is argon or nitrogen, and the annealing temperature is 300-800 ℃.
The present invention is further illustrated by, but not limited to, the following examples.
Example 1:
the embodiment provides a preparation method of a gallium nitride-based diode device with a diamond passivation layer, which comprises the following operation steps:
(1) And cleaning the undoped intrinsic gallium nitride self-supporting wafer and the diamond self-supporting polycrystalline film substrate with dilute hydrochloric acid solution and deionized water, drying, and uniformly coating a proper amount of bonding material on the back surface of the gallium nitride wafer and the growth surface of the diamond substrate for bonding to obtain the gallium nitride wafer taking the diamond self-supporting polycrystalline film as the substrate, as shown in figure 1.
(2) Doping silicon element on the surface of an intrinsic gallium nitride wafer taking diamond as a substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) technology, epitaxially growing an n-type gallium nitride layer with the thickness of 5 mu m, wherein the electron concentration is 2.5x10 19 cm -3 As shown in fig. 2.
(3) A single layer of silicon oxide or silicon nitride transition medium layer with the thickness of 200 a nm a is deposited on the surface of the n-type gallium nitride layer by a plasma enhanced chemical vapor deposition technique, as shown in fig. 3.
(4) And carrying out conventional photoetching, developing, exposing, wet etching/dry etching and other process treatments on the silicon oxide or silicon nitride transition medium layer to expose the round top surface of the middle part of the n-type gallium nitride layer, so as to form a patterned n-type gallium nitride layer mesa, as shown in fig. 4.
(5) Epitaxially growing a 6 mu m-thick intrinsic gallium nitride layer on the surface of the exposed n-type gallium nitride layer by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) technology, and then epitaxially growing a 300 nm-thick p-type gallium nitride layer by doping magnesium element, wherein the hole concentration is 2.5X10 17 cm -3 And etching to remove the residual transition dielectric layer of silicon oxide or silicon nitride, and etching to remove residues on the side walls of the mesa of the intrinsic gallium nitride layer and the p-type gallium nitride layer to form smooth side surfaces, as shown in fig. 5.
(6) Firstly, a silicon nitride medium protective layer with the thickness of 100nm is prepared on the surface of a p-type gallium nitride layer by adopting a plasma enhanced chemical vapor deposition method, and then a diamond passivation layer with the thickness of 400 nm is grown by adopting a microwave plasma chemical vapor deposition method, as shown in fig. 6.
(7) A p-type electrode region and an n-type electrode region are formed on the p-type gallium nitride layer and the n-type gallium nitride layer at the step by conventional photolithography, development, exposure, wet etching/plasma etching, and the like, as shown in fig. 7.
(8) And respectively depositing titanium/platinum/Jin Duoceng metal films in the p-type electrode region and the n-type electrode region by adopting an electron beam evaporation technology, stripping the p-type metal electrode and the n-type metal electrode by using a conventional positive photoresist, and carrying out alloying annealing treatment at 500 ℃ on the metal electrodes in a nitrogen protective atmosphere to obtain the gallium nitride-based diode device with the diamond passivation layer, as shown in fig. 8.
Example 2:
the embodiment provides a preparation method of a gallium nitride-based diode device with a diamond passivation layer, which comprises the following operation steps:
(1) And cleaning the undoped intrinsic gallium nitride self-supporting wafer and the diamond self-supporting polycrystalline film substrate with dilute hydrochloric acid solution and deionized water, drying, and uniformly coating a proper amount of bonding material on the back surface of the gallium nitride wafer and the growth surface of the diamond substrate for bonding to obtain the gallium nitride wafer taking the diamond self-supporting polycrystalline film as the substrate, as shown in figure 1.
(2) Doping silicon element on the surface of an intrinsic gallium nitride wafer taking diamond as a substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) technology, epitaxially growing an n-type gallium nitride layer with the thickness of 4 mu m, and ensuring the electron concentration to be 6 multiplied by 10 19 cm -3 As shown in fig. 2.
(3) A single layer of silicon oxide or silicon nitride transition medium layer with the thickness of 300 a nm a is deposited on the surface of the n-type gallium nitride layer by a plasma enhanced chemical vapor deposition technique, as shown in fig. 3.
(4) And carrying out conventional photoetching, developing, exposing, wet etching/dry etching and other process treatments on the silicon oxide or silicon nitride transition medium layer to expose the round top surface of the middle part of the n-type gallium nitride layer, so as to form a patterned n-type gallium nitride layer mesa, as shown in fig. 4.
(5) Epitaxially growing a 6 mu m-thick intrinsic gallium nitride layer on the surface of the exposed n-type gallium nitride layer by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) technology, and then epitaxially growing a 300 nm-thick p-type gallium nitride layer by doping magnesium element, wherein the hole concentration is 5 multiplied by 10 17 cm -3 And etching to remove the residual transition dielectric layer of silicon oxide or silicon nitride, and etching to remove residues on the side walls of the mesa of the intrinsic gallium nitride layer and the p-type gallium nitride layer to form smooth side surfaces, as shown in fig. 5.
(6) A silicon nitride dielectric protective layer with the thickness of 150-nm is firstly prepared on the surface of the p-type gallium nitride layer by adopting a plasma enhanced chemical vapor deposition method, and then a diamond passivation layer with the thickness of 600-nm is grown by adopting a microwave plasma chemical vapor deposition method, as shown in fig. 6.
(7) A p-type electrode region and an n-type electrode region are formed on the p-type gallium nitride layer and the n-type gallium nitride layer at the step by conventional photolithography, development, exposure, wet etching/plasma etching, and the like, as shown in fig. 7.
(8) And respectively depositing titanium/platinum/Jin Duoceng metal films in the p-type electrode region and the n-type electrode region by adopting an electron beam evaporation technology, stripping the p-type metal electrode and the n-type metal electrode by using a conventional positive photoresist, and carrying out alloying annealing treatment at 500 ℃ on the metal electrodes in a nitrogen protective atmosphere to obtain the gallium nitride-based diode device with the diamond passivation layer, as shown in fig. 8.
Example 3:
the embodiment provides a preparation method of a gallium nitride-based diode device with a diamond passivation layer, which comprises the following operation steps:
(1) The undoped intrinsic gallium nitride self-supporting wafer and the diamond single-wafer substrate are cleaned by dilute hydrochloric acid solution and deionized water and then dried, and a proper amount of bonding materials are uniformly coated on the back surface of the gallium nitride wafer and the growth surface of the diamond substrate for bonding, so that the gallium nitride wafer taking the diamond single-wafer as the substrate is obtained, as shown in figure 1.
(2) Doping silicon element on the surface of an intrinsic gallium nitride wafer taking a diamond single wafer as a substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) technology, epitaxially growing an n-type gallium nitride layer with the thickness of 5 mu m, and ensuring the electron concentration to be 3 multiplied by 10 19 cm -3 As shown in fig. 2.
(3) A single layer of silicon oxide or silicon nitride transition medium layer with the thickness of 200 a nm a is deposited on the surface of the n-type gallium nitride layer by a plasma enhanced chemical vapor deposition technique, as shown in fig. 3.
(4) And carrying out conventional photoetching, developing, exposing, wet etching/dry etching and other process treatments on the silicon oxide or silicon nitride transition medium layer to expose the round top surface of the middle part of the n-type gallium nitride layer, so as to form a patterned n-type gallium nitride layer mesa, as shown in fig. 4.
(5) Epitaxially growing a 5 mu m thick intrinsic gallium nitride layer on the surface of the exposed n-type gallium nitride layer by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) technology, and then epitaxially growing a 300 nm thick p-type gallium nitride layer by doping magnesium element, wherein the hole concentration is 5 multiplied by 10 17 cm -3 Etching to remove residual transition dielectric layer of silicon oxide or silicon nitride, and etching to remove intrinsic gallium nitride layer and p-type gallium nitrideThe residues of the layer mesa sidewalls form smooth sides as shown in fig. 5.
(6) Firstly, a silicon nitride medium protective layer with the thickness of 150-nm is prepared on the surface of a p-type gallium nitride layer by adopting a plasma enhanced chemical vapor deposition method, and then a diamond passivation layer with the thickness of 500-nm is grown by adopting a microwave plasma chemical vapor deposition method, as shown in fig. 6.
(7) A p-type electrode region and an n-type electrode region are formed on the p-type gallium nitride layer and the n-type gallium nitride layer at the step by conventional photolithography, development, exposure, wet etching/plasma etching, and the like, as shown in fig. 7.
(8) And respectively depositing titanium/platinum/Jin Duoceng metal films in the p-type electrode region and the n-type electrode region by adopting an electron beam evaporation technology, stripping the p-type metal electrode and the n-type metal electrode by using a conventional positive photoresist, and carrying out 450 ℃ alloying annealing treatment on the metal electrodes in a nitrogen protective atmosphere to obtain the gallium nitride-based diode device with the diamond passivation layer, as shown in fig. 8.
Claims (9)
1. A method of fabricating a gallium nitride-based diode device having a diamond passivation layer, comprising the steps of: combining the back surface of the undoped intrinsic gallium nitride wafer with the diamond substrate, and sequentially epitaxially growing an n-type gallium nitride layer and a transition medium layer on the front surface of the intrinsic gallium nitride wafer; carrying out photoetching, developing and corrosion process treatment on the transition medium layer to form a graphical n-type gallium nitride layer concave table top; then sequentially epitaxially growing an intrinsic gallium nitride layer or a quantum well layer structure, a p-type gallium nitride layer, a dielectric protection layer and a diamond passivation layer on the surface of the exposed n-type gallium nitride layer; and finally, forming p-type and n-type metal electrodes on the p-type gallium nitride layer and the n-type gallium nitride layer through photoetching, developing, etching and film deposition processes, thereby obtaining the gallium nitride-based diode device with the diamond passivation layer.
2. A method of fabricating a gallium nitride-based diode device having a diamond passivation layer according to claim 1, comprising the steps of:
(1) Combining the back surface of the undoped intrinsic gallium nitride wafer with the diamond substrate to obtain an intrinsic gallium nitride wafer taking diamond as a substrate;
(2) Doping and epitaxially growing an n-type gallium nitride layer on the surface of an intrinsic gallium nitride wafer taking diamond as a substrate by adopting a metal organic chemical vapor deposition technology;
(3) Depositing a transition medium layer on the surface of the n-type gallium nitride layer through plasma enhanced chemical vapor deposition, electron beam evaporation and pulse laser melting;
(4) Carrying out conventional photoetching, developing, wet etching or dry etching process treatment on the transition medium layer in sequence to form a patterned n-type gallium nitride layer table top;
(5) Sequentially epitaxially growing an intrinsic gallium nitride layer or a quantum well layer structure and a p-type gallium nitride layer on the surface of the exposed n-type gallium nitride layer by adopting a metal organic chemical vapor deposition technology;
(6) Removing the residual transition medium layer, and sequentially depositing a medium protection layer and a diamond passivation layer on the surface of the p-type gallium nitride layer from bottom to top;
(7) Forming p-type and n-type electrode regions on the p-type gallium nitride layer and the n-type gallium nitride layer sequentially through conventional photoetching, developing, wet etching or dry etching processes;
(8) And depositing a metal multilayer film in the p-type and n-type electrode areas by adopting an electron beam evaporation or magnetron sputtering technology, stripping the p-type and n-type metal electrodes, and finally carrying out protective atmosphere annealing treatment on the metal electrodes to obtain the gallium nitride-based diode device with the diamond passivation layer.
3. A method of fabricating a gallium nitride-based diode device having a diamond passivation layer according to claim 2, wherein: in the step (1), the bonding mode of gallium nitride and diamond comprises bonding and heteroepitaxial growth methods, the gallium nitride wafer comprises a self-supporting gallium nitride wafer or a sapphire-based gallium nitride thick film wafer, and the diamond substrate comprises a diamond self-supporting polycrystalline film or a diamond single crystal wafer.
4. A method of fabricating a gallium nitride-based diode device having a diamond passivation layer according to claim 2, wherein: in the step (2), the doping element is phosphorus or silicon, the thickness of the n-type gallium nitride layer is 2-20 mu m, and the electron concentration is 10 18 ~10 21 cm -3 。
5. A method of fabricating a gallium nitride-based diode device having a diamond passivation layer according to claim 2, wherein: in the step (3), the transition dielectric layer film comprises an etching mask layer with a single-layer or multi-layer structure of silicon oxide, silicon nitride and nickel, and the thickness is 100-800 nm.
6. A method of fabricating a gallium nitride-based diode device having a diamond passivation layer according to claim 2, wherein: in the step (4), the transition medium layer is etched to expose the round or square top surface of the middle part of the n-type gallium nitride layer.
7. A method of fabricating a gallium nitride-based diode device having a diamond passivation layer according to claim 2, wherein: in the step (5), the thickness of the intrinsic gallium nitride layer is 5-20 mu m, and the thickness of the quantum well layer is 10-100 nm; the doped element of the p-type gallium nitride layer is magnesium, the thickness is 200-800 nm, and the hole concentration is 10 15 ~10 18 cm -3 。
8. A method of fabricating a gallium nitride-based diode device having a diamond passivation layer according to claim 2, wherein: in the step (6), the dielectric protective layer comprises silicon nitride, silicon oxide, silicon oxynitride and aluminum nitride film, and the preparation method comprises plasma enhanced chemical vapor deposition, electron beam evaporation, laser melting evaporation or magnetron sputtering technology; the preparation method of the diamond passivation layer comprises the microwave plasma chemical vapor deposition or hot filament chemical vapor deposition technology; the protective thickness of the dielectric layer is 50-500 nm, and the thickness of the diamond layer is 200-800 nm.
9. A method of fabricating a gallium nitride-based diode device having a diamond passivation layer according to claim 2, wherein: in the step (8), the metal electrode material comprises titanium/platinum/gold, titanium/aluminum/gold, chromium/platinum/Jin Duoceng thin films, and the thickness of the multilayer film electrode is 1-10 mu m; the protective atmosphere is argon or nitrogen, and the annealing temperature is 300-800 ℃.
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