CN111900140A - High-efficiency heat-dissipation gallium nitride transistor based on diamond passivation structure and manufacturing method thereof - Google Patents
High-efficiency heat-dissipation gallium nitride transistor based on diamond passivation structure and manufacturing method thereof Download PDFInfo
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 75
- 239000010432 diamond Substances 0.000 title claims abstract description 75
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 65
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 238000002161 passivation Methods 0.000 title claims abstract description 56
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000010410 layer Substances 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000002346 layers by function Substances 0.000 claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 238000005036 potential barrier Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- 238000009616 inductively coupled plasma Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 230000008719 thickening Effects 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 2
- 238000013461 design Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 3
- 238000009825 accumulation Methods 0.000 description 7
- 238000007726 management method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910021392 nanocarbon Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Abstract
The invention discloses a high-efficiency heat-dissipation gallium nitride transistor based on a diamond passivation structure and a manufacturing method thereof, wherein the high-efficiency heat-dissipation gallium nitride transistor sequentially comprises the diamond passivation layer, a gate source drain functional layer, a barrier layer, a buffer layer and a substrate from top to bottom; the diamond passivation layer is of a multilayer structure, comprises a potential barrier protection layer, a seed layer and a heat conduction layer, has a high heat conduction effect, and effectively reduces the junction temperature of the gallium nitride transistor; the method for realizing the high-efficiency heat dissipation gallium nitride transistor based on the diamond passivation structure adopts a low-temperature diamond growth passivation technology to solve the compatibility with the traditional process of devices. The gallium nitride-based device with the diamond passivation structure has the advantage of high-efficiency heat dissipation capability, and can be used for ultrahigh-power microwave power devices.
Description
Technical Field
The invention belongs to the field of research on a novel semiconductor device thermal management technology, and particularly relates to a high-efficiency heat-dissipation gallium nitride transistor based on a diamond passivation structure and a manufacturing method thereof.
Background
The third generation semiconductor power device represented by gallium nitride has shown excellent high-power application characteristics, the power density of the gallium nitride device in practical application only reaches 3-8W/mm, which is far lower than the theoretical value, and the high-power characteristic advantage of the gallium nitride is far from being exerted. This is mainly because the gallium nitride device can produce a large amount of heat accumulation while outputting high power, the heat accumulation is serious when the power is larger, the heat accumulation causes the increase of the junction temperature of the gallium nitride transistor core, and the performance and the reliability of the device are both sharply attenuated. At present, because the heat conduction capability of the self material of the gallium nitride-based power device can not meet the development of high power of the device, and the heat dissipation problem seriously limits the performance of the gallium nitride device, the heat management development of the gallium nitride semiconductor device becomes a main technical bottleneck for solving the high-power application of the gallium nitride semiconductor device. Therefore, the exploration of the heat management method for integrating the high-heat-conduction material and the near junction region of the gallium nitride device is a main way and a research hotspot for solving the heat accumulation of the gallium nitride device and adapting to the high power of the gallium nitride device.
Disclosure of Invention
The invention aims to provide a high-efficiency heat-dissipation gallium nitride transistor based on a diamond passivation structure and a manufacturing method thereof, which solve the problem of heat accumulation of an active area of a gallium nitride power device chip, develop a chip-level heat management technology and improve the output characteristic and reliability of a gallium nitride device.
The technical solution for realizing the purpose of the invention is as follows: the high-efficiency heat-dissipation gallium nitride transistor based on the diamond passivation structure sequentially comprises a diamond passivation layer, a gate-source-drain functional layer, a barrier layer, a buffer layer and a substrate from top to bottom, wherein the diamond passivation layer is of a multilayer structure and comprises a barrier protection layer, a seed layer and a heat conduction layer.
Furthermore, the material of the barrier protection layer is SiN or AlN medium with the thickness of 10-30 nanometers, the material of the seed layer is carbon-based medium with the thickness of 10-50 nanometers, and the heat conduction layer is diamond medium with the thickness of 400-600 nanometers.
Furthermore, the diamond passivation layer adopts a step-by-step and low-temperature growth process, and firstly grows a barrier protection layer medium, then grows a seed layer material, and finally grows a heat conduction layer material.
A manufacturing method of a high-efficiency heat-dissipation gallium nitride transistor based on a diamond passivation structure comprises the following steps:
1) preparing a source drain functional region: growing source and drain functional regions;
2) and (3) passivating and preparing diamond: firstly, growing a potential barrier protective layer by adopting a CVD (chemical vapor deposition) process, wherein the thickness of the potential barrier protective layer is 10-30 nanometers, and the material is SiN or AlN medium; secondly, growing a seed layer, wherein the thickness of the seed layer is 10-50 nanometers of the carbon-based medium; finally, growing the diamond heat conduction layer by adopting a CVD (chemical vapor deposition) technology, wherein the thickness of the heat conduction layer is 400-600 nm, and the growth temperature is not higher than 750 ℃;
3) etching the gate diamond: etching the diamond passivation layer to realize the preparation of the gallium nitride functional layer gate region;
4) and (3) gate metal growth: growing by adopting a gate process, and preparing gate metal of a gallium nitride functional layer, wherein the thickness of the gate metal is 50-100 nanometers larger than that of a diamond passivation layer;
5) and (3) etching the diamond in the source and drain regions: etching the diamond passivation layer to realize the preparation of the source drain thickened interconnection region of the gallium nitride function layer;
6) interconnection preparation of a source-drain functional region: thickening and interconnecting the source and drain functional regions by adopting a gold evaporation growth process, wherein the thickness of the diamond passivation layer in the total thickness of the source and drain is 50-100 nanometers large; and finishing the manufacture of the high-efficiency heat-dissipation gallium nitride transistor based on the diamond passivation structure.
Further, etching of the diamond passivation layer is carried out in the steps 3) and 5) by adopting photoetching and ICP (inductively coupled plasma) processes.
Compared with the prior art, the invention has the following remarkable advantages: according to the invention, the CVD technology is utilized to carry out diamond passivation growth on the gallium nitride transistor, the preparation of the diamond gate region is realized through the multi-step etching technology, and the high-heat-conductivity diamond heat dissipation layer is formed on the upper surface of the heat source region of the gallium nitride transistor, so that the development of a new chip-level heat management technology of the gallium nitride transistor is realized, the heat dissipation capability of a near-junction region of the gallium nitride transistor is improved, and the problem of heat accumulation is solved; (2) according to the invention, the high-thermal-conductivity diamond material is integrated into the gallium nitride chip, so that the heat dissipation capability of a near junction area in the chip is improved, compared with the traditional gallium nitride device, the thermal resistance of the device can be reduced by more than 20%, the heat accumulation of an active area of the gallium nitride device is solved, and the reliability of the device is greatly improved.
Drawings
Fig. 1 is a schematic structural diagram of a high-efficiency heat-dissipation gallium nitride transistor device based on a diamond passivation structure.
Fig. 2 includes fig. 2a, fig. 2b, fig. 2c, fig. 2d, fig. 2e, and fig. 2f, which are schematic diagrams of the process flow of the design and manufacturing method of the high efficiency heat dissipation gallium nitride transistor based on the diamond passivation structure according to the present invention.
Detailed Description
The following describes in detail a specific embodiment of the present invention with reference to the drawings and examples.
Referring to fig. 1, the invention provides a high-efficiency heat-dissipation gallium nitride transistor based on a diamond passivation structure and a manufacturing method thereof, wherein the high-efficiency heat-dissipation gallium nitride transistor sequentially comprises a diamond passivation layer 3, source drain gate functional layers 1, 2 and 4, a barrier layer 5, a buffer layer 6 and a substrate 7 from top to bottom. The diamond passivation layer 3 is of a multilayer structure, comprises a potential barrier protection layer, a seed layer and a heat conduction layer, has a high heat conduction effect, and effectively reduces the junction temperature of the gallium nitride transistor. The barrier protection layer is made of SiN or AlN medium with the thickness of 10-30 nanometers, the seed layer is made of carbon-based medium with the thickness of 10-50 nanometers, and the heat conduction layer is made of diamond medium with the thickness of 400-600 nanometers. The high-efficiency heat-dissipation gallium nitride transistor substrate 7 is made of any one of Si, sapphire and SiC materials, the buffer layer 6 is made of GaN materials, and the barrier layer is made of AlGaN materials;
referring to fig. 2, in the method for manufacturing the high-efficiency heat-dissipation gallium nitride transistor based on the diamond passivation structure, the compatibility between the traditional process of the transistor and the diamond passivation growth is solved by the following steps:
1) preparing a source drain functional region: the growth of the functional regions of the source 1-1 and drain 2-1 is carried out using conventional processes, as shown in FIG. 2 a;
2) and (3) passivating and preparing diamond: firstly, growing a potential barrier protective layer 3-1 by adopting a CVD (chemical vapor deposition) process, wherein the thickness of the potential barrier protective layer is 10-30 nanometers, and the material is SiN or AlN medium; secondly, growing a seed layer 3-2, wherein the thickness of the seed layer is 10-50 nanometers of the carbon-based medium; finally, growing the diamond heat conduction layer 3-3 by adopting a CVD technology, wherein the thickness of the heat conduction layer is 400-600 nm, and the growth temperature is not higher than 750 ℃; as shown in fig. 2 b;
3) etching the gate diamond: etching the diamond passivation layer by adopting the processes of photoetching, ICP (inductively coupled plasma) and the like to realize the preparation of the gallium nitride functional layer gate region 4-1 as shown in figure 2 c;
4) and (3) gate metal growth: growing by adopting a traditional gate process, and preparing a gallium nitride functional layer gate metal 4, wherein the thickness of the gate metal is 50-100 nanometers larger than that of a diamond passivation layer, as shown in figure 2 d;
5) and (3) etching the diamond in the source and drain regions: : etching the diamond passivation layer by adopting the processes of photoetching, ICP (inductively coupled plasma) and the like to realize the preparation of the source-drain thickened interconnection regions 1-2 and 2-2 of the gallium nitride function layer, as shown in figure 2 e;
6) interconnection preparation of a source-drain functional region: thickening and interconnecting the source 1 and drain 2 functional regions by adopting a traditional gold evaporation growth process, wherein the thickness of the diamond passivation layer with the total thickness of the source and drain is 50-100 nanometers larger, as shown in figure 2 f; and finishing the manufacture of the high-efficiency heat-dissipation gallium nitride transistor based on the diamond passivation structure.
The present invention will be described in detail with reference to examples.
Examples
A method for designing and manufacturing a high-efficiency heat-dissipation gallium nitride transistor based on a diamond passivation structure specifically comprises the following steps:
1) based on GaN epitaxial materials, growing source and drain functional regions by adopting the traditional source and drain evaporation process, wherein the thickness is 200 nanometers;
2) firstly, growing a SiN potential barrier protective layer by adopting a CVD (chemical vapor deposition) process, wherein the thickness of the SiN is 20 nanometers; secondly, growing a nano carbon-based seed layer with the thickness of 20 nanometers; finally, growing the diamond heat conduction layer by adopting a CVD (chemical vapor deposition) technology, wherein the growth thickness is 460 nanometers, and the growth temperature is 740 ℃;
3) designing the gate length to be 0.4 micron, etching the diamond passivation layer by adopting the processes of photoetching, ICP (inductively coupled plasma) and the like, and preparing a gallium nitride functional layer gate region by adopting oxygen and argon as etching gases;
4) growing by adopting a traditional gate process, and preparing gallium nitride functional layer gate metal, wherein the thickness of the gate metal is 550 nanometers;
5) etching the diamond passivation layer on the source and drain by adopting the traditional photoetching, ICP (inductively coupled plasma) and other processes, wherein the etching gas adopts oxygen and argon, and the etching area is consistent with the size of the source and drain, so that the preparation of the thickened interconnection area of the source and drain of the gallium nitride functional layer is completed;
6) finally, thickening interconnection of the source and drain functional regions is carried out by adopting a traditional gold evaporation growth process, the thickness of the interconnection thickened metal is 350 nanometers, and the total thickness of the source and drain is 550 nanometers; and finishing the manufacture of the high-efficiency heat-dissipation gallium nitride transistor based on the diamond passivation structure.
The invention obtains satisfactory trial effect through repeated test verification. The gallium nitride-based device with the diamond passivation structure has the advantage of high-efficiency heat dissipation capability, and can be used for ultrahigh-power microwave power devices.
Claims (8)
1. A high-efficiency heat-dissipation gallium nitride transistor based on a diamond passivation structure is characterized in that the structure design sequentially comprises a diamond passivation layer, a gate source drain functional layer, a barrier layer, a buffer layer and a substrate from top to bottom; the diamond passivation layer is of a multilayer structure and comprises a potential barrier protection layer, a seed layer and a heat conduction layer.
2. The gallium nitride transistor with high heat dissipation efficiency and based on the diamond passivation structure as claimed in claim 1, wherein the barrier protection layer is made of SiN or AlN medium with a thickness of 10-30 nm, the seed layer is made of carbon-based medium with a thickness of 10-50 nm, and the heat conduction layer is made of diamond medium with a thickness of 400-600 nm.
3. The diamond passivation structure-based high efficiency heat dissipation gallium nitride transistor according to claim 2, wherein the diamond passivation layer employs a step growth process, first growing a barrier protection layer dielectric, then growing a seed layer material, and finally growing a thermal conduction layer material.
4. The diamond passivation structure-based high efficiency heat-dissipating gallium nitride transistor according to claim 2, wherein the substrate is Si, sapphire or SiC material.
5. The diamond passivation structure-based high efficiency heat-dissipating gallium nitride transistor according to claim 2, wherein the buffer layer is a GaN material.
6. The diamond passivation structure-based high efficiency heat-dissipating gallium nitride transistor according to claim 2, wherein the barrier layer is an AlGaN material.
7. A method for manufacturing a high efficiency heat-dissipating gallium nitride transistor based on a diamond passivation structure as claimed in any one of claims 1-6, comprising the steps of:
1) preparing a source drain functional region: growing source and drain functional regions;
2) and (3) passivating and preparing diamond: firstly, growing a potential barrier protective layer by adopting a CVD (chemical vapor deposition) process, wherein the thickness of the potential barrier protective layer is 10-30 nanometers, and the material is SiN or AlN medium; secondly, growing a seed layer, wherein the thickness of the seed layer is 10-50 nanometers of the carbon-based medium; finally, growing the diamond heat conduction layer by adopting a CVD (chemical vapor deposition) technology, wherein the thickness of the heat conduction layer is 400-600 nm, and the growth temperature is not higher than 750 ℃;
3) etching the gate diamond: etching the diamond passivation layer to realize the preparation of the gallium nitride functional layer gate region;
4) and (3) gate metal growth: growing by adopting a gate process, and preparing gate metal of a gallium nitride functional layer, wherein the thickness of the gate metal is 50-100 nanometers larger than that of a diamond passivation layer;
5) and (3) etching the diamond in the source and drain regions: etching the diamond passivation layer to realize the preparation of the source drain thickened interconnection region of the gallium nitride function layer;
6) interconnection preparation of a source-drain functional region: thickening and interconnecting the source and drain functional regions by adopting a gold evaporation growth process, wherein the thickness of the diamond passivation layer in the total thickness of the source and drain is 50-100 nanometers large; and finishing the manufacture of the high-efficiency heat-dissipation gallium nitride transistor based on the diamond passivation structure.
8. The method for manufacturing the high-efficiency heat-dissipation gallium nitride transistor based on the diamond passivation structure as claimed in claim 7, wherein the etching of the diamond passivation layer is performed in the steps 3) and 5) by adopting photoetching and ICP (inductively coupled plasma) processes.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113838816A (en) * | 2021-09-29 | 2021-12-24 | 太原理工大学 | Preparation method of gallium nitride-based diode device with diamond passivation layer |
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| US20090146186A1 (en) * | 2007-12-07 | 2009-06-11 | The Government of the United State of America, as represented by the Secretary of the Navy | Gate after Diamond Transistor |
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| CN110349924A (en) * | 2019-06-23 | 2019-10-18 | 中国电子科技集团公司第五十五研究所 | A kind of lifting tab is embedded in the process of diamond gallium nitride transistor thermotransport ability |
| CN110379782A (en) * | 2019-06-23 | 2019-10-25 | 中国电子科技集团公司第五十五研究所 | Diamond heat dissipation gallium nitride transistor and preparation method are embedded in based on the piece for etching and orienting extension |
| US20200203520A1 (en) * | 2018-12-20 | 2020-06-25 | Texas Instruments Incorporated | Gallium nitride devices including a tunnel barrier layer |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20090146186A1 (en) * | 2007-12-07 | 2009-06-11 | The Government of the United State of America, as represented by the Secretary of the Navy | Gate after Diamond Transistor |
| WO2011163318A2 (en) * | 2010-06-23 | 2011-12-29 | Cornell University | Gated iii-v semiconductor structure and method |
| US20200203520A1 (en) * | 2018-12-20 | 2020-06-25 | Texas Instruments Incorporated | Gallium nitride devices including a tunnel barrier layer |
| CN110349924A (en) * | 2019-06-23 | 2019-10-18 | 中国电子科技集团公司第五十五研究所 | A kind of lifting tab is embedded in the process of diamond gallium nitride transistor thermotransport ability |
| CN110379782A (en) * | 2019-06-23 | 2019-10-25 | 中国电子科技集团公司第五十五研究所 | Diamond heat dissipation gallium nitride transistor and preparation method are embedded in based on the piece for etching and orienting extension |
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| CN113838816A (en) * | 2021-09-29 | 2021-12-24 | 太原理工大学 | Preparation method of gallium nitride-based diode device with diamond passivation layer |
| CN113838816B (en) * | 2021-09-29 | 2024-02-02 | 太原理工大学 | Preparation method of gallium nitride-based diode device with diamond passivation layer |
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Application publication date: 20201106 |