CN209266412U - Integrated enhanced and depletion type HEMT - Google Patents
Integrated enhanced and depletion type HEMT Download PDFInfo
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- CN209266412U CN209266412U CN201920004165.4U CN201920004165U CN209266412U CN 209266412 U CN209266412 U CN 209266412U CN 201920004165 U CN201920004165 U CN 201920004165U CN 209266412 U CN209266412 U CN 209266412U
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Abstract
The application proposes a kind of integrated enhanced and depletion type HEMT, comprising: substrate；First buffer layer on the substrate；The first barrier layer and second buffer layer in the first buffer layer；The first channel layer on the first barrier layer；The second barrier layer positioned at the second buffer layer and the second channel layer positioned at second barrier layer；And the first source electrode, the first drain electrode and first grid on the first channel layer, the second source electrode, the second drain electrode and second grid on second channel layer.The HEMT for the integrated enhanced and depletion type that the utility model is proposed, enhanced and depletion mode transistor can be integrated, be conducive to increase the purposes of gallium nitride HEMT device, the characteristic of circuit is improved, and to realize that single-chip integration high-speed figure/analog mixed-signal radio circuit is laid a good foundation.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors, integrated enhanced and depletion type more particularly to planting
HEMT。
Background technique
As the representative of third generation semiconductor material, gallium nitride (GaN) has many excellent characteristics, high critical breakdown potential
Field, high electron mobility, high two-dimensional electron gas and good high temperature operation capability etc..The third generation based on gallium nitride is partly led
Body structure, such as high electron mobility field-effect tube (HEMT), hetero-structure field effect field-effect tube (HFET) have been obtained
Using especially needing high-power and high-frequency field to have a clear superiority in radio frequency, microwave etc..
GaN HEMT is mainly applied to communications industry and power electronics industry, but it believes in high-speed digital circuit and mixing
Also there is unique advantage in number field.GaN HEMT has outstanding high-temperature stability, can be greatly lowered circuit in heat source and
The cost of thermal field control aspect.And the broad stopband feature of GaN makes it be provided simultaneously with high electron saturation velocities and high-breakdown-voltage,
Device is set to work under higher voltage, and the driving capability of circuit can be improved in this.Therefore, with traditional silicon technology
It compares, can satisfy using the digital circuit of GaN HEMT base in high current voltage swing and the energy to work under harsh environment
Power, so that it has potential huge applications in corresponding field.
It realizes the digital circuit of GaN HEMT base, must just realize the E/D HEMT monolithic collection of high performance gallium nitride base
At.It is relatively difficult to manufacture relative to conventional D-mode (depletion type) GaN HEMT, E-mode (enhanced) GaN HEMT.And E-
Mod GaN HEMT be not only realize DCFL logic needs, and its performance the characteristic of circuit is also played it is vital
Effect.Therefore, on the basis of E-mod GaN HEMT is difficult to manufacture, enhanced and depletion type HEMT single-chip integration is realized just
It is more difficult.
Utility model content
The application proposes a kind of integrated enhanced and depletion type HEMT, comprising:
Substrate；
First buffer layer on the substrate；
The first barrier layer and second buffer layer in the first buffer layer；
The first channel layer on the first barrier layer；
The second barrier layer positioned at the second buffer layer and the second channel layer positioned at second barrier layer；
And the first source electrode, the first drain electrode and first grid on the first channel layer, it is located at second channel layer
On the second source electrode, second drain electrode and second grid.
In one embodiment, institute, first barrier layer with a thickness of 1nm-30nm, the thickness of second barrier layer
Greater than first barrier layer and it is less than 100nm.
In one embodiment, second barrier layer with a thickness of 1nm-30nm, the thickness of first barrier layer is big
In second barrier layer and it is less than 100nm.
In one embodiment, the dielectric layer material is any one in silicon nitride, silica and silicon oxynitride.
In one embodiment, the first buffer layer includes the first doped layer contacted with first barrier layer, institute
Stating the first barrier layer includes the second doped layer contacted with first doped layer.
In one embodiment, the second buffer layer includes the third doped layer contacted with second barrier layer, institute
Stating the second barrier layer includes the 4th doped layer contacted with the third doped layer.
The HEMT for the integrated enhanced and depletion type that the utility model is proposed, can be by enhanced and depletion mode transistor
It integrates, is conducive to the purposes for increasing gallium nitride HEMT device, improve the characteristic of circuit, and to realize that single-chip integration is high
Speed digital/analog mixed-signal radio circuit is laid a good foundation.
Detailed description of the invention
The structure chart for the integrated enhanced and depletion type HEMT that Fig. 1 is proposed by one embodiment.
The structure chart for the integrated enhanced and depletion type HEMT that Fig. 2 is proposed by one embodiment
Specific embodiment
Below in conjunction with the drawings and specific embodiments to the utility model proposes integrated enhanced and depletion type HEMT make into
One step is described in detail.According to following explanation and claims, will be become apparent from feature the advantages of the utility model.It should be noted
It is that attached drawing is all made of very simplified form and using non-accurate ratio, only to facilitate, lucidly aid in illustrating this reality
With the purpose of new embodiment.
In the utility model, in " forming layer on another layer ", rectangular stratification on another layer may mean that, but
Different given layer directly physically or electrically contacts (for example, may exist other one or more layers between the two layers) with another layer.So
And in some embodiments, " ... it is upper to be formed " it can be with the direct object of at least part of expression layer and another layer of top surface
Reason contact.
Integrated enhanced and depletion type HEMT structure of proposition described in the present embodiment is as shown in Figure 1, comprising:
Substrate 1, the first buffer layer 2 on the substrate 1, the first barrier layer 3 in the first buffer layer 2
With second buffer layer 6, the first channel layer 4 on the first barrier layer 3, positioned at the second barrier layer of the second buffer layer 6
7, positioned at the second channel layer 8 of second barrier layer 7,4 10 and of the first source electrode 9, first drain electrode on the first channel layer
First grid 11, the second source electrode 12, second drain electrode 13 and second grid 14 on second channel layer 8.
1 material of substrate includes but is not limited to Si, Sic, GaN or sapphire etc..2 material of first buffer layer can be with
For GaN, InN, AlN, AlGaN, the three-group metal nitrides such as InGaN, the first buffer layer 2 is nitrogen face polar.Such as it is described
2 material of first buffer layer is GaN, then is the polar GaN buffer layer in the face N.First barrier layer 3 can be ternary or quaternary
Nitride compound semiconductor alloy, such as AlGaN, InGaN etc..First channel layer, 4 material can for GaN, InN,
AlN, AlGaN, the three-group metal nitrides such as InGaN, are similarly nitrogen face polar, can be with the material phase of the first buffer layer 2
Together, it can also be different.For example, 2 material of first buffer layer can be GaN, 4 material of the first channel layer can be InN.It is described
The surface that first channel layer 4 is in contact with first barrier layer 3 is formed with the two-dimensional electron gas (void in the first channel layer of Fig. 14
Shown in line), there is high electron mobility and high electron density, make break-over of device as conducting channel.
6 material of second buffer layer can be GaN, InN, AlN, AlGaN, and the three-group metal nitrides such as InGaN are described
Second buffer layer 6 is similarly nitrogen face polar.6 material of second buffer layer can be identical as 2 material of first buffer layer,
It can be different.In one embodiment, 2 material of first buffer layer can be GaN, and 6 material of second buffer layer can be
InN.Second barrier layer 7 can be the nitride compound semiconductor alloy of ternary or quaternary, can be with described first
3 material of barrier layer is identical, can also be different.Second channel layer, 8 material can be GaN, InN, AlN, AlGaN, InGaN etc.
Three-group metal nitride is similarly nitrogen face polar, can be identical as the material of the second buffer layer 6, can also be different.Example
Such as, 6 material of second buffer layer can be GaN, and 8 material of the second channel layer can be InN.Second channel layer 8
The surface being in contact with second barrier layer 7 is formed with two-dimensional electron gas (shown in the dotted line in the second channel layer of Fig. 1 8), tool
There are high electron mobility and high electron density, makes break-over of device as conducting channel.
First channel layer 4 is equipped with the first source electrode 9, first drain electrode 10 and first grid 11, the first grid 11
Between first source electrode 9 and the first drain electrode 10.First source electrode 9 and the first drain electrode 10 can be Ti, Pt, Au, W,
The combination of any one or more metal in Ni.The first grid 11 can be ni au or platinum/gold composition metal is folded
Layer.Second channel layer 8 is equipped with the second source electrode 12, second drain electrode 13 and second grid 14, the second grid 14 are located at
Between second source electrode 12 and the second drain electrode 13.Second source electrode 12 and the second drain electrode 13 can be Ti, Pt, Au, W, Ni
In any one or more metal combination.The second grid 14 can be ni au or platinum/gold composition metal is folded
Layer.
In the present embodiment, it since barrier layer is located at the lower section of conducting channel, needs to eliminate or subtract by doping process
Few radio frequency diverging.Referring to FIG. 2, the first buffer layer 2 includes the first doped layer 21 contacted with first barrier layer 3,
First barrier layer 3 includes the second doped layer 31 contacted with first doped layer 21.The second buffer layer 6 include with
The third doped layer 61 that second barrier layer 7 contacts, second barrier layer 7 includes contacting with the third doped layer 61
4th doped layer 71.Dopant in the doped layer is silicon ion or germanium ion, doping concentration 1*1018/cm3-2*1019/
cm3。
In the present embodiment, first barrier layer 3 depends on ternary or quaternary with a thickness of 1nm-30nm, specific thickness
The component of Al in component, such as AlGaN shared by metal material.The thickness of second barrier layer 7 needs to be greater than first gesture
Barrier layer 3, and need to be less than 100nm.Either second barrier layer 7 depends on three with a thickness of 1nm-30nm, specific thickness
The component of In in component, such as InGaN shared by member or quaternary metal material.The thickness needs of first barrier layer 3 are greater than
Second barrier layer 7, and need to be less than 100nm.
Enhanced field-effect tube refers in the case where grid does not apply voltage, can also be by the two-dimensional electron gas in channel
Truncation, and when grid applies forward voltage, channel is just begun to turn on.Therefore, the first barrier layer than it is relatively thin when, described
The first channel layer 4, the first barrier layer 3, first buffering of one grid 11, the first source electrode 9 and the first drain electrode 10 and corresponding lower section
Layer 2 and substrate 1 constitute enhanced field-effect tube, and the second grid 14, the second source electrode 12 and second drain under 13 and correspondence
The second channel layer 8, the second barrier layer 7, second buffer layer 6, first buffer layer 2 and the substrate 1 of side constitute depletion field effect transistor.
And the second barrier layer than it is relatively thin when, the of the second grid 14, the second source electrode 12 and the second drain electrode 13 and corresponding lower section
Two channel layers 8, the second barrier layer 7, second buffer layer 6, first buffer layer 2 and substrate 1 constitute enhanced field-effect tube, and described
The first channel layer 4, the first barrier layer 3, first buffering of one grid 11, the first source electrode 9 and the first drain electrode 10 and corresponding lower section
Layer 2 and substrate 1 constitute depletion field effect transistor.
Integrated enhanced and depletion type HEMT provided by the present embodiment, can be by enhanced and depletion mode transistor collection
At the purposes for, being conducive to increase gallium nitride HEMT device together, the characteristic of circuit is improved, and to realize single-chip integration high speed
Digital-to-analog mixed signal radio circuit is laid a good foundation.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it cannot be understood as the limitations to utility model patent range.It should be pointed out that for the common skill of this field
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The protection scope of the utility model.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (5)
1. a kind of integrated enhanced and depletion type HEMT characterized by comprising
Substrate；
First buffer layer on the substrate；
The first barrier layer and second buffer layer in the first buffer layer；
The first channel layer on the first barrier layer；
The second barrier layer positioned at the second buffer layer and the second channel layer positioned at second barrier layer；
And the first source electrode, the first drain electrode and first grid on the first channel layer, on second channel layer
Second source electrode, the second drain electrode and second grid.
2. according to claim 1 integrated enhanced and depletion type HEMT, which is characterized in that first barrier layer
With a thickness of 1nm-30nm, the thickness of second barrier layer is greater than first barrier layer and is less than 100nm.
3. according to claim 1 integrated enhanced and depletion type HEMT, which is characterized in that second barrier layer
With a thickness of 1nm-30nm, the thickness of first barrier layer is greater than second barrier layer and is less than 100nm.
4. according to claim 1 integrated enhanced and depletion type HEMT, which is characterized in that the first buffer layer packet
The first doped layer contacted with first barrier layer is included, first barrier layer includes contacted with first doped layer
Two doped layers.
5. according to claim 1 integrated enhanced and depletion type HEMT, which is characterized in that the second buffer layer packet
The third doped layer contacted with second barrier layer is included, second barrier layer includes contacted with the third doped layer
Four doped layers.
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| CN201920004165.4U CN209266412U (en) | 2019-01-04 | 2019-01-04 | Integrated enhanced and depletion type HEMT |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023236523A1 (en) * | 2022-06-08 | 2023-12-14 | 东南大学 | Enhanced integrated structure of n-channel and p-channel gan devices |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023236523A1 (en) * | 2022-06-08 | 2023-12-14 | 东南大学 | Enhanced integrated structure of n-channel and p-channel gan devices |
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Address after: 215000 west side of b0-1f, Zhongyuan industrial building, No. 259, Changyang street, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou City, Jiangsu Province Patentee after: Suzhou Han Hua Semiconductor Co.,Ltd. Address before: Room 303, building 11, Northwest District, Suzhou nano City, 99 Jinjihu Avenue, Suzhou Industrial Park, 215000, Jiangsu Province Patentee before: Suzhou Han Hua Semiconductor Co.,Ltd. |
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