CN206301803U - A kind of back of the body potential barrier GaN HEMT-structures of double-heterostructure - Google Patents
A kind of back of the body potential barrier GaN HEMT-structures of double-heterostructure Download PDFInfo
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Abstract
The utility model is related to technical field of manufacturing semiconductors, more particularly to a kind of double-heterostructure back of the body potential barrier GaN HEMT-structures, include successively from the bottom to top：Substrate, SiN/AlN nucleating layers, AlGaN cushions, GaN channel layers, GaN cushions, AlGaN potential barrier, GaN cap layers, can efficiently solve the common excessive problem for causing device to puncture in advance of AlGaN/GaN HEMT cushions internal leakage electric current.
Description
Technical field
The utility model is related to technical field of manufacturing semiconductors, more particularly to a kind of double-heterostructure back of the body potential barrier GaN
HEMT-structure.
Background technology
Silicon base chip experience decades development, as Si base CMOS sizes constantly reduce, its frequency performance is also improved constantly,
When expected characteristic size reaches 25nm, its fT is up to 490GHz.But the Johnson figures of merit of Si materials are only 0.5 THzV, size
The breakdown voltage of diminution Si cmos devices will be substantially less that 1V, this greatly limits silicon base chip in very high speed digital field
Application.In recent years, people constantly search for its substitute, because wide bandgap semiconductor gallium nitride (GaN) material has superelevation
The Johnson figures of merit（5 THzV）, when its device channel size reaches 10nm magnitudes, breakdown voltage remains to keep 10 V or so,
Extensive both at home and abroad attention has gradually been caused.Requiring high conversion efficiency and accurate threshold control, broadband, Larger Dynamic scope
Circuit（Such as ultra wide band ADC, DAC）Digital and electronic field has a wide and special application prospect, supports national defense communication, airborne
And space system.GaN bases digital logic device turns into the focus of Speed Semiconductor area research in recent years, just as Si
Contenders of the CMOS high speed circuits in the follow-up developments in digital-to-analogue and radio circuit field, are the points of state key support
End technology, can be rated as " heart " of information industry.
At present, the processing yardstick of the logical device based on GaN HEMT has had been enter into the category of GaN nano-electrons, and fT has reached
190 GHz, positive fT are marched for the GHz of 300 GHz to 500, as the developing new opportunity of third generation semiconductor,
Ultrahigh speed field has boundless development potentiality.But, wherein big grid leak for these conventional device structures itself
Electric current is to hinder device performance to improve the Main Bottleneck with practical application, is let out in common AlGaN/GaN HEMT devices cushion
The excessive problem for causing device to puncture in advance of leakage current is never resolved at present.
Utility model content
The utility model embodiment is solved existing by providing a kind of back of the body potential barrier GaN HEMT-structures of double-heterostructure
There are the AlGaN/GaN HEMT device excessive technical problems for causing device to puncture in advance of cushion internal leakage electric current in technology.
In order to solve the above-mentioned technical problem, the utility model provides a kind of back of the body potential barrier GaN HEMT of double-heterostructure
Structure, includes successively from the bottom to top：Substrate, SiN/AlN nucleating layers, AlGaN cushions, GaN channel layers, GaN cushions,
AlGaN potential barrier, GaN cap layers.
Further, it is additionally included in the GaN cap layers, using any one gold in photoetching and evaporation Ti/Al/Ni/Au
Category forms source-drain electrode metal.
Further, also include：In the GaN cap layers, photoetching and Cl is used2ICP dry etching isolation is carried out, is carved
Erosion GaN cap and AlGaN potential barrier, until GaN cushions, form a mesa-isolated area.
Further, photoetching and any one metal, stripped technique in evaporation Pt/ Au in the mesa-isolated area
Gate metal is formed, Schottky contacts are formed with the AlGaN potential barrier.
Using one or more technical scheme in the utility model, have the advantages that：
1st, can greatly be opened up with process compatible during conventional silicon base CMOS high speed logic circuits during this period in the utility model
In the application in digital circuit field during GaN wide.
2nd, the back of the body potential barrier HEMT device structure can effectively strengthen GaN device two-dimensional electron gas.
3rd, AlGaN cushions have bigger energy gap and the critical of Geng Gao to puncture compared to GaN cushions in the device
Electric field so that the device has more preferable carrier confinement and pinch-off behavior.
4th, the device architecture can well solve that common AlGaN/GaN HEMT cushions internal leakage electric current is excessive to be caused
The problem that device punctures in advance.
5th, the device can further lift the performance of wide band gap semiconductor device, cost can be greatly lowered again, in digital-to-analogue
Possess huge potentiality with RF circuit applications.
Brief description of the drawings
Fig. 1 is the structural representation of the back of the body potential barrier GaN HEMT-structures of double-heterostructure in the utility model embodiment.
Specific embodiment
The utility model embodiment provides a kind of back of the body potential barrier GaN HEMT-structures of double-heterostructure, solves existing
The excessive technical problem for causing device to puncture in advance of AlGaN/GaN HEMT devices cushion internal leakage electric current in technology.
In order to solve the above-mentioned technical problem, it is new to this practicality below in conjunction with Figure of description and specific embodiment
The technical scheme of type is described in detail.
The utility model embodiment provides a kind of back of the body potential barrier GaN HEMT-structures of double-heterostructure, such as Fig. 1
It is shown, include successively from the bottom to top：Substrate 10, SiN/AlN nucleating layers 20, AlGaN cushions 30, GaN channel layers 40, GaN delay
Rush layer 50, AlGaN potential barrier 60, GaN cap layers 70.
In a particular embodiment, also include：In the GaN cap layers 70, using photoetching and evaporation Ti/Al/Ni/Au
In any one metal formed source-drain electrode metal.Source-drain electrode metal is located at the left and right sides respectively.Also include：In the GaN caps
On layer, photoetching and Cl is used2ICP dry etching isolation is carried out, GaN cap and AlGaN potential barrier is etched, until GaN bufferings
Layer, forms a mesa-isolated area.Photoetching and any one metal in evaporation Pt/ Au in mesa-isolated area are additionally included in, through stripping
Separating process forms gate metal, and Schottky contacts are formed with AlGaN potential barrier.So as to form active area.
Specifically, the material of the substrate 10 is specially any one in Si, SiC, GaN, sapphire, Diamond, mainly
It act as backing material.The SiN/AlN nucleating layers 20 undope, and thickness is 400 ~ 800nm, outer with follow-up for absorbing Si substrates
Prolong the stress produced by lattice mismatch between layer, it is to avoid produce lattice relaxation.The AlGaN cushions are Si substrates to GaN raceway grooves
Between cushion, for absorb Si substrates and subsequent epitaxial layer between because lattice mismatch produce stress, wherein, Al's contains
Measure is 5%.The GaN channel layers using MOCVD grow, under low field for two-dimensional electron gas provide conducting channel.
The AlGaN potential barrier is grown using MOCVD methods, and thickness is 1.5nm, for forming schottky junctions with gate metal
Touch.The GaN cap is undoped, and Si substrates are grown to the cushion between GaN channel layers on barrier layer AlN using MOCVD, is adopted
With GaN, undope, thickness is 1nm ~ 3nm.
Specific beneficial effect：
1st, the GaN HEMT devices structure based on silicon substrate can be with conventional Si bases CMOS high speed logics electricity in the utility model
Road device technology is compatible, greatly widens application of the GaN device in digital circuit field.
2nd, the device can effectively strengthen GaN device two-dimensional electron gas.
3rd, AlGaN cushions have bigger energy gap and the critical of Geng Gao to puncture compared to GaN cushions in the device
Electric field so that the device has more preferable carrier confinement and pinch-off behavior.
4th, the device architecture can well solve that common AlGaN/GaN HEMT cushions internal leakage electric current is excessive to lead
The problem for causing device to puncture in advance.
5th, GaN technology of the device based on silicon substrate can further lift the performance of wide band gap semiconductor device, again may be used
Cost is greatly lowered, huge potentiality are possessed in digital-to-analogue and RF circuit applications.
Although having been described for preferred embodiment of the present utility model, those skilled in the art once know substantially
Creative concept, then can make other change and modification to these embodiments.So, appended claims are intended to be construed to bag
Include preferred embodiment and fall into having altered and changing for the utility model scope.
Obviously, those skilled in the art can carry out various changes and modification without deviating from this practicality to the utility model
New spirit and scope.So, if it is of the present utility model these modification and modification belong to the utility model claim and
Within the scope of its equivalent technologies, then the utility model is also intended to comprising these changes and modification.
Claims (8)
1. back of the body potential barrier GaN HEMT-structures of a kind of double-heterostructure, it is characterised in that include successively from the bottom to top：Substrate,
SiN/AlN nucleating layers, AlGaN cushions, GaN channel layers, GaN cushions, AlGaN potential barrier, GaN cap layers.
2. back of the body potential barrier GaN HEMT-structures of double-heterostructure according to claim 1, it is characterised in that also include：
In the GaN cap layers, source-drain electrode metal is formed using any one metal in photoetching and evaporation Ti/Al/Ni/Au.
3. back of the body potential barrier GaN HEMT-structures of double-heterostructure according to claim 1, it is characterised in that also include：
In the GaN cap layers, photoetching and Cl is used2ICP dry etching isolation is carried out, GaN cap and AlGaN potential barrier is etched, directly
To GaN cushions, a mesa-isolated area is formed.
4. back of the body potential barrier GaN HEMT-structures of double-heterostructure according to claim 3, it is characterised in that also include：
Photoetching and any one metal in evaporation Pt/ Au in the mesa-isolated area, stripped technique forms gate metal, with institute
State AlGaN potential barrier and form Schottky contacts.
5. back of the body potential barrier GaN HEMT-structures of double-heterostructure according to claim 1, it is characterised in that the substrate
Material be specially in Si, SiC, GaN, sapphire, Diamond any one.
6. back of the body potential barrier GaN HEMT-structures of double-heterostructure according to claim 1, it is characterised in that the SiN/
AlN nucleating layers undope, and thickness is 400 ~ 800nm.
7. back of the body potential barrier GaN HEMT-structures of double-heterostructure according to claim 1, it is characterised in that described
The thickness of AlGaN potential barrier is 1.5nm.
8. back of the body potential barrier GaN HEMT-structures of double-heterostructure according to claim 1, it is characterised in that the GaN
Cushion undopes, and thickness is 1nm ~ 3nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111969047A (en) * | 2020-08-27 | 2020-11-20 | 电子科技大学 | Gallium nitride heterojunction field effect transistor with composite back barrier layer |
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2016
- 2016-12-28 CN CN201621451944.1U patent/CN206301803U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111969047A (en) * | 2020-08-27 | 2020-11-20 | 电子科技大学 | Gallium nitride heterojunction field effect transistor with composite back barrier layer |
| CN111969047B (en) * | 2020-08-27 | 2022-05-24 | 电子科技大学 | Gallium nitride heterojunction field effect transistor with composite back barrier layer |
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