CN109256336A - A method of preparing diamond based substrate gallium nitride transistor - Google Patents
A method of preparing diamond based substrate gallium nitride transistor Download PDFInfo
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- CN109256336A CN109256336A CN201811089355.7A CN201811089355A CN109256336A CN 109256336 A CN109256336 A CN 109256336A CN 201811089355 A CN201811089355 A CN 201811089355A CN 109256336 A CN109256336 A CN 109256336A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 106
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 57
- 239000010432 diamond Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 239000010410 layer Substances 0.000 claims abstract description 46
- 238000000151 deposition Methods 0.000 claims abstract description 40
- 239000012792 core layer Substances 0.000 claims abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 15
- 229910052594 sapphire Inorganic materials 0.000 claims description 15
- 239000010980 sapphire Substances 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 238000010899 nucleation Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 238000012546 transfer Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 235000019441 ethanol Nutrition 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229960004756 ethanol Drugs 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000002113 nanodiamond Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
Abstract
A method of diamond based substrate gallium nitride tube device is prepared, semiconductor process technique field is belonged to.The depositing diamond film first after the front GaN deposits certain thickness dielectric layer, then initial substrates and GaN forming core layer are removed, later in the remaining surface GaN depositing high-quality GaN device layer, obtain Buddha's warrior attendant ground mass GaN wafer, transistor device finally is prepared on Buddha's warrior attendant ground mass gallium nitride wafer, to obtain the gallium nitride tube device based on diamond substrate.The method of the present invention not only solves the problem of how GaN wafer being transferred to temporary carrier, and reduces the risk that gallium nitride wafer ruptures in transfer process；The Buddha's warrior attendant ground mass GaN wafer obtained simultaneously belongs to the chip of isoepitaxial growth, and GaN layer quality is higher, and interface binding power is stronger, substantially reduces interface resistance, gives full play to the potentiality of diamond film high thermal conductivity.This Buddha's warrior attendant ground mass gallium nitride wafer can be used for solving the thermal diffusion problem of high-power component.
Description
Technical field
The invention belongs to semiconductor process technique fields, prepare diamond based substrate gallium nitride more particularly to a kind of
The method of pipe.
Background technique
In recent years, using GaN as the third generation semiconductor material of representative have high two-dimensional electron gas, high breakdown field strength,
The features such as high electron saturation velocities.In white light LEDs, short wavelength laser, ultraviolet detector and high temperature high power device
It is with a wide range of applications.But the excellent power performance of GaN base transistor device does not give full play to, the main reason is that
Gallium nitride power device can generate a large amount of heat when exporting high-power, but these a large amount of heats can not be diffused out quickly
It goes, device stability and reliability is caused seriously to reduce.The main epitaxial growth of gallium nitride material at present silicon carbide, sapphire,
On the substrates such as silicon, the thermal conductivity of these substrate materials is lower, and the serious heat dissipation effect for restricting GaN device limits GaN device
Performance.
Therefore, finding highly heat-conductive material becomes the approach for solving heat dissipation problem as gallium nitride device substrate.Currently, Buddha's warrior attendant
Stone is the highest material of thermal conductivity in nature, thus Buddha's warrior attendant ground mass gallium nitride than process for sapphire-based gallium nitride, silicon based gallium nitride and
Silicon carbide-based gallium nitride has preferably heat dissipation advantage.Preparing Buddha's warrior attendant ground mass gallium nitride device at present, there are mainly two types of methods: key
Legal and direct epitaxial growth method.Wherein the Francis D of the 4th teams experiment room in the U.S. and University of California
Wasserbauer J is reported in " Diamond and Related Materials " magazine using atomistic binding technology, is obtained
Obtained gallium nitride-diamond wafer, and discuss thermal dilation difference and cause the warpage and deformation of chip, at the same think how
There is also challenges for reduce wafer distortion and reduce thermal expansion mismatch and improve bonding success rate etc..Science and technology group of China Electronics
Also epitaxial layer of gallium nitride is realized using bonding techniques and shift and obtain Buddha's warrior attendant ground mass GaN wafer, have main steps that and facing
Si base GaN and temporary carrier front are bonded, silicon substrate are removed, is just being looked unfamiliar in diamond by the front Shi Zaiti spin coating binder
Long dielectric layer, activation diamond front；It is realized at room temperature with the bonding of GaN disk and diamond that temporary carrier is support again
Annealing is transferred to GaN epitaxial layer on diamond with binder removal liquid separation diamond and temporary carrier.This method lacks
Point is interface resistance height, is unfavorable for giving full play to diamond substrate high thermal conductivity；It is lower to be bonded uniformity, is easy to produce bonding
Blind spot causes device stability and safety to be difficult to ensure.And 6 company of Dong Liu and element of University of Bristol
Daniel Francis and FiroozFaili et al. " Scripta Materialia " report it is a kind of using LPCVD in nitrogen
After changing the dielectric layer for depositing one layer of 30nm on gallium, it is crystal seed with varigrained nano-diamond powder, gold is deposited on gallium nitride
Hard rock, but do not account for gallium nitride deformation after removal initial substrates and concentrated with stress caused by coefficient of thermal expansion mismatch, and
Crystal seed introduces the damage to gallium nitride, forms continuous through-hole in interface, leading to gallium nitride, there are slight cracks.University of Bristol
6 company of HuaruiSun and Roland B.Simon and element DanielFrancis in " APPLIED PHYSICS
LETTERS " in report a kind of method in gallium nitride backside deposition diamond, mainly report by reduce transition region thickness and
Diamond nucleation thickness degree does not propose how that installation temporary carrier and initial substrates are gone in text the method that reduces interface resistance
Except rear gallium nitride breakage.
Summary of the invention
The purpose of the present invention is to provide a kind of methods for preparing the gallium nitride tube device based on diamond substrate.Its
Purpose is the damage after avoiding gallium nitride surface depositing diamond film to gallium nitride, and this method can not only increase substantially gold
Hard rock base gallium nitride wafer is prepared into power, can also reduce the risk that gallium nitride wafer ruptures in transfer process；Simultaneously
To Buddha's warrior attendant ground mass GaN wafer belong to isoepitaxial growth chip, the GaN layer of high quality and the good combination at interface can be significantly
Interface resistance is reduced, the potentiality of diamond film high thermal conductivity are given full play to.This Buddha's warrior attendant ground mass gallium nitride wafer can be used for
Solve the thermal diffusion problem of high-power component.
A method of diamond based substrate gallium nitride tube device being prepared, it is characterized in that being first in the front GaN
Depositing diamond film after certain thickness dielectric layer is deposited, initial substrates and GaN forming core layer are then removed, later in remaining GaN
Surface depositing high-quality GaN device layer obtains Buddha's warrior attendant ground mass GaN wafer, finally prepares on Buddha's warrior attendant ground mass gallium nitride wafer brilliant
Body tube device, to obtain the gallium nitride tube device based on diamond substrate.
Further, specific implementation step of the present invention are as follows:
(1) clean the gallium nitride wafer of a non-self-supporting with diluted hydrochloric acid, and using acetone and dehydrated alcohol according to
Secondary ultrasonic cleaning, is then rinsed with deionized water, dry；
(2) magnetron sputtering technique dielectric layer SiNx is utilized on gallium nitride wafer surface；
(3) the ultrasonic seeding processing in 1%~30% diamond alcohol suspension by the chip after dielectric layer；
(4) seeding treated GaN/SiN dielectric layer is put into microwave plasma chambers upwardly, first with CVD
Method deposits the diamond film of 50~500 μ m-thicks in gallium nitride front；
(5) GaN wafer of depositing diamond film is taken out, it is using laser lift-off technique that the sapphire of gallium nitride wafer is former
The removal of beginning substrate；
(6) exposed GaN wafer selective etch is fallen into certain thickness GaN forming core layer；
(7) the GaN/ diamond wafer surface depositing high-quality GaN device after removal initial substrates and gallium nitride forming core layer
Part layer；
(8) transistor device is prepared on Buddha's warrior attendant ground mass gallium nitride wafer, to obtain the nitridation based on diamond substrate
Gallium transistor device.
Further, the step (2) is during dielectric layer SiNx, deposition parameter are as follows: silicon is target, deposits function
Rate 80w~150w, base vacuum is less than 4.0 × 10-4Pa, 10~30sccm of nitrogen flow, 10~30sccm of argon flow, reaction
Chamber presses 0.1Pa~0.8Pa, and medium thickness is 10nm~1000nm.
Further, step (3) ultrasonic power is 30W~100W, and ultrasonic time is 1-5 minutes.
Further, the step (4) first in the front GaN using CVD deposition with a thickness of 50 μm~500 μm of thin diamond
When film, deposition parameter: depositing temperature are as follows: 600~900 DEG C, CH4/H2It is 0.1%~10%, argon flow 3.0slm~
5.0slm, chamber pressure are 2.5~4.0Pa, 8~10kw of power.
Further, it is the KrF pulse laser of 248nm from sapphire backsides incidence that the step (5), which uses wavelength, is utilized
Laser energy at GaN and sapphire interface to heating, and heating temperature is not less than 30 DEG C, and heating melts Ga, eliminates residual
Ga.
Further, the step (6) etches away certain thickness GaN forming core using reactive plasma Etch selectivity
Layer, GaN layer is removed to remaining 100nm~1000nm.
Further, the step (7) utilizes mocvd method depositing high-quality gallium nitride device layer on the exposed surface GaN,
Wherein deposition parameter are as follows: using trimethyl gallium as gallium source, NH3For nitrogen source, and with H2And N2Or the mixed gas of two kinds of gas is to carry
Gas, depositing temperature is 800~1200 DEG C, in the GaN device layer of the exposed surface GaN homoepitaxial deposition high quality.
The present invention compared with prior art, remarkable advantage: 1) has broken and has been difficult to epitaxial growth on a diamond substrate
The limitation of gallium nitride.2) wafer uniformity obtained after gallium nitride surface depositing diamond is good, gallium nitride layer be not easily broken or
Person's skinning.3) using can cause to nitrogenize to avoid because of depositing diamond by the way of gallium nitride back side redeposition gallium nitride device layer
The damage of gallium device layer reaches the lossless effect of device layer.4) it is original heavy in gallium nitride surface Direct precipitation diamond film to break
Product limitation of poor quality and transition thickness, is greatly lowered interface resistance.
Detailed description of the invention
Fig. 1 is process for sapphire-based GaN wafer schematic diagram,
Fig. 2 is the process for sapphire-based GaN wafer schematic diagram deposited after SiNx dielectric layer,
Fig. 3 is the GaN wafer surface depositing diamond film schematic diagram with SiNx dielectric layer,
Fig. 4 is the GaN wafer schematic diagram after initial substrates removing,
Fig. 5 is the GaN wafer schematic diagram after removing initial substrates and after further etch nitride gallium forming core layer,
Fig. 6 be in the surface GaN homoepitaxy high-quality GaN device layer schematic diagram,
Fig. 7 is the schematic diagram that transistor device is prepared on Buddha's warrior attendant ground mass gallium nitride.
Specific embodiment
Technical solution of the invention is further described with reference to the accompanying drawing.
Embodiment:
1, preparation of samples: cleaning a process for sapphire-based GaN wafer first with hydrochloric acid, (silicon substrate, silicon carbide-based gallium nitride are brilliant
Piece), then be cleaned by ultrasonic with acetone, it is cleaned with EtOH Sonicate, is finally rinsed with deionized water later, guarantee table
Face is remained without ethyl alcohol, is then placed in dryer and is dried.
2, magnetron sputtering method dielectric layer SiNx, deposition parameter are utilized on gallium nitride wafer surface are as follows: silicon is target, is sunk
Product power 80w~150w, base vacuum is less than 4.0 × 10-4Pa, 10~30sccm of nitrogen flow, 10~30sccm of argon flow,
Reaction chamber presses 0.1Pa~0.8Pa, and medium thickness is 10nm~1000nm, as shown in Figure 2.
3, the chip after dielectric layer is ultrasonic in 1%~30% diamond alcohol suspension, at this time gallium nitride/
SiNx dielectric layer is face-down, improves seeding density, ultrasonic power is unsuitable excessively high, and ultrasonic power range is 30W~100W, and the time is not
It is preferably too long, 1-5 minutes, after ultrasonic, wafer surface, drying were rinsed with deionized water.
4, by treated, the surface GaN/SiNx is put into upwards in microwave plasma chambers, utilizes microwave plasma
CVD method deposits the diamond film (depositing diamond method is not limited to microwave plasma CVD technique) of 50~500 μ m-thicks, deposition ginseng
Number: depositing temperature is 600~900 DEG C, CH4/H2It is 1%~20%, nitrogen flow 1sccm, chamber pressure is 7~15kPa, power
For 1~3KW, as shown in Figure 3.
5, the GaN wafer of depositing diamond film is taken out, it is using laser lift-off technique that the sapphire of gallium nitride wafer is former
The removal of beginning substrate, removes parameter: using wavelength is the KrF pulse laser of 248nm from sapphire backsides incidence, utilizes laser energy
To heating at GaN and sapphire interface, heating temperature is not less than 30 DEG C, and heating melts Ga, to eliminate remaining Ga.
The GaN wafer for removing Sapphire Substrate is placed in hydrochloric acid solution and is cleaned, it is therefore intended that removes remaining metal Ga, cleaning
Spent acid is removed with deionized water afterwards, is then placed in dryer and is dried, as shown in Figure 4.
6, exposed GaN wafer is placed in reactive plasma etch chamber, utilizes reactive plasma Etch selectivity
Certain thickness GaN forming core layer is etched away, while controlling etch thicknesses, guarantee will not cause brokenly the device layer of GaN epitaxial layer
It is bad, GaN layer is removed to remaining 100nm~1000nm, being obtained at this time with diamond film is the GaN device layer supported, such as
Shown in Fig. 5.
7, the GaN/ diamond lattic structure chip for removing initial substrates and gallium nitride forming core layer is placed in MOCVD reaction chamber
It is interior, using trimethyl gallium as gallium source, NH3For nitrogen source, and with H2And N2Or the mixed gas of two kinds of gas is carrier gas, depositing temperature
It is 800~1200 DEG C, in the device layer of the exposed surface GaN homoepitaxial deposition GaN high quality, eliminates due to the removal of forming core layer
The dislocation of introducing, the final Buddha's warrior attendant ground mass GaN wafer for obtaining high quality, as shown in Figure 6.
8, transistor device is prepared on Buddha's warrior attendant ground mass gallium nitride wafer, to obtain the gallium nitride based on diamond substrate
Transistor device.
Claims (8)
1. a kind of method for preparing diamond based substrate gallium nitride tube device, it is characterized in that being to sink in the front GaN first
Depositing diamond film after the certain thickness dielectric layer of product, then removes initial substrates and GaN forming core layer, later in remaining GaN table
Face depositing high-quality GaN device layer obtains Buddha's warrior attendant ground mass GaN wafer, finally prepares crystal on Buddha's warrior attendant ground mass gallium nitride wafer
Tube device, to obtain the gallium nitride tube device based on diamond substrate.
2. a kind of method of novel gallium nitride tube device of the preparation based on diamond substrate as described in claim 1,
It is characterized in that specific implementation step are as follows:
(1) gallium nitride wafer of a non-self-supporting is cleaned with diluted hydrochloric acid, and is successively surpassed using acetone and dehydrated alcohol
Sound cleaning, is then rinsed with deionized water, dry；
(2) magnetron sputtering technique dielectric layer SiNx is utilized on gallium nitride wafer surface；
(3) the ultrasonic seeding processing in 1%~30% diamond alcohol suspension by the chip after dielectric layer；
(4) seeding treated GaN/SiN dielectric layer is put into microwave plasma chambers upwardly, is existed first with CVD method
Gallium nitride front deposits the diamond film of 50~500 μ m-thicks；
(5) GaN wafer of depositing diamond film is taken out, using laser lift-off technique by the original lining of the sapphire of gallium nitride wafer
Bottom removal；
(6) exposed GaN wafer selective etch is fallen into certain thickness GaN forming core layer；
(7) the GaN/ diamond wafer surface depositing high-quality GaN device layer after removal initial substrates and gallium nitride forming core layer；
(8) transistor device is prepared on Buddha's warrior attendant ground mass gallium nitride wafer, so that it is brilliant to obtain the gallium nitride based on diamond substrate
Body tube device.
3. a kind of method for preparing diamond based substrate gallium nitride tube device as claimed in claim 2, it is characterised in that step
Suddenly (2) during dielectric layer SiNx, deposition parameter are as follows: silicon is target, deposition power 80w~150w, and base vacuum is small
In 4.0 × 10-4Pa, 10~30sccm of nitrogen flow, 10~30sccm of argon flow, reaction chamber press 0.1Pa~0.8Pa, dielectric
Layer is with a thickness of 10nm~1000nm.
4. a kind of method for preparing diamond based substrate gallium nitride tube device as claimed in claim 2, it is characterised in that step
Suddenly (3) described ultrasonic power is 30W~100W, and ultrasonic time is 1-5 minutes.
5. a kind of method for preparing diamond based substrate gallium nitride tube device as claimed in claim 2, it is characterised in that step
Suddenly (4) first in the front GaN using CVD deposition with a thickness of 50 μm~500 μm of diamond thin when, deposition parameter: depositing temperature
Are as follows: 600~900 DEG C, CH4/H2It is 0.1%~10%, argon flow 3.0slm~5.0slm, chamber pressure is 2.5~4.0Pa, power
8~10kw.
6. a kind of method for preparing diamond based substrate gallium nitride tube device as claimed in claim 2, it is characterised in that step
Suddenly it is the KrF pulse laser of 248nm from sapphire backsides incidence that (5), which use wavelength, using laser energy to GaN and sapphire circle
It is heated at face, heating temperature is not less than 30 DEG C, and heating melts Ga, eliminates remaining Ga.
7. a kind of method for preparing diamond based substrate gallium nitride tube device as claimed in claim 2, it is characterised in that step
Suddenly (6) etch away certain thickness GaN forming core layer using reactive plasma Etch selectivity, and GaN layer is removed to residue
100nm~1000nm.
8. a kind of method for preparing diamond based substrate gallium nitride tube device as claimed in claim 2, it is characterised in that step
Suddenly (7) utilize mocvd method depositing high-quality gallium nitride device layer on the exposed surface GaN, wherein deposition parameter are as follows: with trimethyl
Gallium is gallium source, NH3For nitrogen source, and with H2Or N2Or the mixed gas of two kinds of gas is carrier gas, depositing temperature is 800~1200
DEG C, in the GaN device layer of the exposed surface GaN homoepitaxial deposition high quality.
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| CN110211880A (en) * | 2019-07-05 | 2019-09-06 | 苏州汉骅半导体有限公司 | Buddha's warrior attendant ground mass gallium nitride HEMT structure making process |
| CN110517950A (en) * | 2019-07-29 | 2019-11-29 | 太原理工大学 | A method of preparing Zinc-Blende GaN film on a diamond substrate |
| CN112992678A (en) * | 2021-02-05 | 2021-06-18 | 中国电子科技集团公司第十三研究所 | Preparation method of GaN field effect transistor based on diamond substrate |
| CN113571410A (en) * | 2021-07-19 | 2021-10-29 | 太原理工大学 | Preparation method of diamond-based gallium nitride wafer material with low interface thermal resistance |
| WO2021253234A1 (en) * | 2020-06-16 | 2021-12-23 | 重庆康佳光电技术研究院有限公司 | Apparatus and method for removing metal gallium, and laser lift off system |
| CN113838816A (en) * | 2021-09-29 | 2021-12-24 | 太原理工大学 | Preparation method of gallium nitride-based diode device with diamond passivation layer |
| CN113841223A (en) * | 2019-05-23 | 2021-12-24 | 三菱电机株式会社 | Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device |
| CN114094439A (en) * | 2021-10-22 | 2022-02-25 | 南京邮电大学 | Gallium nitride surface emitting laser based on silicon nitride photonic crystal and preparation method thereof |
| CN115491764A (en) * | 2022-09-29 | 2022-12-20 | 中国电子科技集团公司第十三研究所 | Method for stripping epitaxial diamond and GaN material |
| CN116705594A (en) * | 2023-08-02 | 2023-09-05 | 中国科学院微电子研究所 | Thin film semiconductor and diamond composite substrate and manufacturing method thereof |
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