CN113820198B - 半导体硅片表面金属回收率及设备的检测方法 - Google Patents
半导体硅片表面金属回收率及设备的检测方法 Download PDFInfo
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- CN113820198B CN113820198B CN202111165702.1A CN202111165702A CN113820198B CN 113820198 B CN113820198 B CN 113820198B CN 202111165702 A CN202111165702 A CN 202111165702A CN 113820198 B CN113820198 B CN 113820198B
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- silicon wafer
- metal
- standard
- recovery
- concentration
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 219
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 219
- 239000002184 metal Substances 0.000 title claims abstract description 218
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 217
- 239000010703 silicon Substances 0.000 title claims abstract description 217
- 238000011084 recovery Methods 0.000 title claims abstract description 177
- 238000000034 method Methods 0.000 title claims abstract description 78
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 81
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 21
- 238000012360 testing method Methods 0.000 claims abstract description 20
- 238000004458 analytical method Methods 0.000 claims abstract description 13
- 239000012498 ultrapure water Substances 0.000 claims abstract description 11
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 150000002739 metals Chemical class 0.000 claims description 25
- 239000012086 standard solution Substances 0.000 claims description 23
- 238000011109 contamination Methods 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 12
- 229910052745 lead Inorganic materials 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 194
- 239000000243 solution Substances 0.000 description 19
- 229910052802 copper Inorganic materials 0.000 description 17
- 230000008569 process Effects 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/40—Concentrating samples
- G01N1/4055—Concentrating samples by solubility techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/34—Purifying; Cleaning
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
- G01N27/626—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode using heat to ionise a gas
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Biomedical Technology (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Sampling And Sample Adjustment (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111165702.1A CN113820198B (zh) | 2021-09-30 | 2021-09-30 | 半导体硅片表面金属回收率及设备的检测方法 |
Applications Claiming Priority (1)
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CN202111165702.1A CN113820198B (zh) | 2021-09-30 | 2021-09-30 | 半导体硅片表面金属回收率及设备的检测方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113820198A CN113820198A (zh) | 2021-12-21 |
CN113820198B true CN113820198B (zh) | 2023-12-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111165702.1A Active CN113820198B (zh) | 2021-09-30 | 2021-09-30 | 半导体硅片表面金属回收率及设备的检测方法 |
Country Status (1)
Country | Link |
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CN (1) | CN113820198B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117191932A (zh) * | 2023-11-06 | 2023-12-08 | 山东有研艾斯半导体材料有限公司 | 一种硅片表面金属回收率的测试方法及系统 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06192861A (ja) * | 1992-12-01 | 1994-07-12 | Piyuaretsukusu:Kk | シリコンウェハの表面処理法 |
US5635463A (en) * | 1995-03-17 | 1997-06-03 | Purex Co., Ltd. | Silicon wafer cleaning fluid with HN03, HF, HCl, surfactant, and water |
JP2005303094A (ja) * | 2004-04-14 | 2005-10-27 | Sumco Corp | シリコンウェーハのゲッタリング効率を評価する方法 |
CN1851016A (zh) * | 2006-05-30 | 2006-10-25 | 姜益群 | 硅废弃片表面金属的去除和贵金属银铂金的回收方法 |
KR20150077095A (ko) * | 2013-12-27 | 2015-07-07 | 주식회사 엘지실트론 | 표준 웨이퍼 제조 방법 |
CN106841364A (zh) * | 2015-12-03 | 2017-06-13 | 有研半导体材料有限公司 | 一种vpd用金属回收液及其配制方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3494102B2 (ja) * | 2000-01-26 | 2004-02-03 | 信越半導体株式会社 | シリコンウエーハ中の金属不純物濃度評価方法 |
-
2021
- 2021-09-30 CN CN202111165702.1A patent/CN113820198B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06192861A (ja) * | 1992-12-01 | 1994-07-12 | Piyuaretsukusu:Kk | シリコンウェハの表面処理法 |
US5635463A (en) * | 1995-03-17 | 1997-06-03 | Purex Co., Ltd. | Silicon wafer cleaning fluid with HN03, HF, HCl, surfactant, and water |
JP2005303094A (ja) * | 2004-04-14 | 2005-10-27 | Sumco Corp | シリコンウェーハのゲッタリング効率を評価する方法 |
CN1851016A (zh) * | 2006-05-30 | 2006-10-25 | 姜益群 | 硅废弃片表面金属的去除和贵金属银铂金的回收方法 |
KR20150077095A (ko) * | 2013-12-27 | 2015-07-07 | 주식회사 엘지실트론 | 표준 웨이퍼 제조 방법 |
CN106841364A (zh) * | 2015-12-03 | 2017-06-13 | 有研半导体材料有限公司 | 一种vpd用金属回收液及其配制方法 |
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Publication number | Publication date |
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CN113820198A (zh) | 2021-12-21 |
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Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230525 Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Applicant after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. |
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Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |