CN113782419A - 一种自对准双重图形制作方法 - Google Patents

一种自对准双重图形制作方法 Download PDF

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CN113782419A
CN113782419A CN202010521377.7A CN202010521377A CN113782419A CN 113782419 A CN113782419 A CN 113782419A CN 202010521377 A CN202010521377 A CN 202010521377A CN 113782419 A CN113782419 A CN 113782419A
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layer
pattern
silicon
silicon nitride
amorphous silicon
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邱岩栈
陈颖儒
刘立尧
胡展源
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Shanghai Huali Integrated Circuit Manufacturing Co Ltd
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Abstract

本发明提供一种自对准双重图形制作方法，提供设有第一氧化层、非晶硅层及有机层的硅基底，按光刻胶图形刻蚀有机层及非晶硅层，将第一氧化层上表面暴露出，在非晶硅图形顶部和侧壁覆盖第一氮化硅层；刻蚀去除非晶硅图形顶部的第一氮化硅层，在非晶硅图形侧壁形成第一氮化硅侧壁图形；去除第一氮化硅侧壁图形间的非晶硅图形；定义鳍型晶体管形貌，刻蚀第一氧化层和硅基底形成核心图形，在核心图形上覆盖薄型氮化硅层；沉积第二氧化层并研磨至露出薄型氮化硅层为止；定义鳍型晶体管高度，对第二氧化层回刻至露出核心图形的高度满足所定义的鳍型晶体管高度为止；去除薄型氮化硅层；沉积第三氧化层以覆盖暴露的核心图形的顶部和侧壁。

Description

一种自对准双重图形制作方法
技术领域
本发明涉及半导体技术领域，特别是涉及一种自对准双重图形制作方法。
背景技术
现有技术中的鳍式晶体管逻辑芯片工艺的一般流程为(如图1至图13)：1、在硅基底01上依次形成第一氧化层02、氮化硅硬掩膜层A、氧化硅硬掩膜层B、非晶硅层03、有机层04；2、在有机层上形成光刻胶图形05；3、依照光刻胶图形刻蚀有机层和非晶硅层，形成非晶硅图形06；4、在非晶硅图形上覆盖第一氮化硅层07；5、刻蚀第一氮化硅层07将非晶硅图形顶部暴露；5、去除非晶硅图形并保留非晶硅图形侧壁的氮化硅层，形成第一氮化硅侧壁图形08；6、依照第一氮化硅侧墙图形刻蚀氧化硅硬掩膜层B和氮化硅硬掩膜层A以及第一氧化层02和硅基底，形成硅基底的核心图形10和位于核心图形10上的第一氧化层图形021、位于第一氧化层图形021上的氮化硅硬掩膜图形Aa、位于氮化硅硬掩膜图形Aa上的氧化硅硬掩膜图形Bb；7、沉积一层薄型氧化层110；8、覆盖填充硅基底图形之间间隙的第二氧化层12；9、研磨第二氧化层至氮化硅硬掩膜图形Aa顶部停止；10、第二氧化层12回刻至第一氧化层图形021顶部停止，将氮化硅硬掩膜图形Aa暴露出来；11、去除氮化硅硬掩膜图形；12、定义鳍型晶体管高度并进行第二氧化层12回刻暴露出一部分硅基底的核心图形10；13、在暴露出的核心图形侧壁和顶部沉积第三氧化层13。现有技术中由于核心刻蚀工艺定义出的非晶硅高度较高，造成侧壁氮化硅高度较高，降低光阻间隙填充之工艺窗口，并且由于工艺流程复杂，造成生产效率低下并增加生产成本。
因此，需要提出一种新的自对准双重图形制作工艺来解决上述问题。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种自对准双重图形制作方法，用于解决现有技术中的问题。
为实现上述目的及其他相关目的，本发明提供一种自对准双重图形制作方法，至少包括以下步骤：
步骤一、提供硅基底，所述硅基底上设有第一氧化层；所述第一氧化层上设非晶硅层；所述非晶硅层上设有有机层；
步骤二、使用掩膜板定义多晶硅关键尺寸，之后在所述有机层上悬涂光刻胶，并按照所述多晶硅关键尺寸形成光刻胶图形；
步骤三、定义非晶硅图形的高度和关键尺寸，按照所述光刻胶图形刻蚀所述有机层及非晶硅层，刻蚀至将所述第一氧化层上表面暴露出，并形成具有所定义的高度和关键尺寸的所述非晶硅图形；
步骤四、在所述非晶硅图形顶部和侧壁以及暴露出的所述第一氧化层上表面覆盖第一氮化硅层；
步骤五、刻蚀去除所述非晶硅图形顶部的所述第一氮化硅层，将所述非晶硅图形顶部暴露出来，在所述非晶硅图形侧壁形成第一氮化硅侧壁图形；
步骤六、去除所述第一氮化硅侧壁图形之间的所述非晶硅图形；
步骤七、定义鳍型晶体管形貌，沿所述第一氮化硅侧壁图形刻蚀所述第一氧化层和所述硅基底，形成具有定义的所述鳍型晶体管形貌的硅基底的核心图形以及位于所述核心图形上的第一氧化层图形；
步骤八、去除所述第一氧化层图形；
步骤九、在所述核心图形上覆盖一层薄型氮化硅层；
步骤十、沉积覆盖所述薄型氮化硅层并填充所述核心图形之间空隙的第二氧化层；
步骤十一、研磨所述第二氧化层至露出所述核心图形顶部的所述薄型氮化硅层为止；
步骤十二、定义鳍型晶体管高度，对所述第二氧化层进行回刻，刻蚀至露出所述核心图形的高度满足所定义的鳍型晶体管高度为止；
步骤十三、去除露出的所述核心图形侧壁和顶部的薄型氮化硅层；
步骤十四、沉积第三氧化层以覆盖暴露的所述核心图形的顶部和侧壁。
优选地，步骤一中所述硅基底上设有的所述第一氧化层为氧化硅层，该氧化硅层的形成方法为：将所述硅基底上表面进行氧化，形成一层氧化硅层。
优选地，步骤一中所述第一氧化层上的非晶硅层的形成方法为：在所述第一氧化层上沉积非晶硅，形成所述非晶硅层。
优选地，步骤二中的所述光刻胶图形为多个相互间隔的条形结构。
优选地，步骤三中的所述非晶硅图形上的有机层被完全去除。
优选地，步骤四中形成所述第一氮化硅层的方法为原子层沉积法。
优选地，步骤九中在所述核心图形上覆盖所述薄型氮化硅层的方法为原子层沉积法。
优选地，步骤十中沉积所述第二氧化层的方法为流体化学气相沉积法。
优选地，步骤十一对所述第二氧化层进行研磨的方法为化学机械研磨法。
优选地，步骤十三利用磷酸去除露出的所述核心图形侧壁和顶部的薄型氮化硅层。
如上所述，本发明的自对准双重图形制作方法，具有以下有益效果：本发明的自对准双重图形制作方法定义出高度较低的非晶硅和氧化硅硬掩膜，定义出高度较低的自对准双重图形硬掩膜，并在鳍型晶体管工艺后进行原子沉积氮化硅截止层，使用氧化硅和非晶硅的形貌取代现有技术中的氧化硅/氮化硅/氧化硅/非晶硅的结构，使用原子沉积技术在鳍型晶体管刻蚀工艺后进行氮化硅沉积化学机械研磨工艺的截止层，取代原本在核心刻蚀工艺前进行氮化硅沉积作为截止层，增加光阻间细填充工艺窗口，有效简化自对准双重制作工艺流程。
附图说明
图1至图13显示为现有技术中的自对准双重图形制作工艺流程中形成的各结构示意图；
图14至图26显示为本发明中的自对准双重图形制作工艺流程中形成的各结构示意图；
图27显示为本发明的自对准双重图形制作方法流程图。
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
请参阅图14至图27。需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图式中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。
如图27所示，图27显示为本发明的自对准双重图形制作方法流程图，本发明提供一种自对准双重图形制作方法，该方法至少包括以下步骤：
步骤一、提供硅基底，所述硅基底上设有第一氧化层；所述第一氧化层上设非晶硅层；所述非晶硅层上设有有机层；步骤一中所述硅基底上设有的所述第一氧化层为氧化硅层，该氧化硅层的形成方法为：将所述硅基底上表面进行氧化，形成一层氧化硅层。如图14所示，图14显示为本发明中的硅基底上设有第一氧化层、非晶硅层、有机层以及光刻胶图形的结构示意图。亦即所述硅基底01上设有所述第一氧化层02，所述第一氧化层02上设有覆盖所述第一氧化层02上表面的非晶硅层03，所述非晶硅层03上表面设有所述有机层04。本发明进一步地，本实施例的步骤一中所述第一氧化层02上的非晶硅层03的形成方法为：在所述第一氧化层02上沉积非晶硅，形成所述非晶硅层03。
步骤二、使用掩膜板定义多晶硅关键尺寸，之后在所述有机层上悬涂光刻胶，并按照所述多晶硅关键尺寸形成光刻胶图形；如图14所示，本发明进一步地，本实施例的步骤二中的所述光刻胶图形05为多个相互间隔的条形结构。
步骤三、定义非晶硅图形的高度和关键尺寸，按照所述光刻胶图形刻蚀所述有机层及非晶硅层，刻蚀至将所述第一氧化层上表面暴露出，并形成具有所定义的高度和关键尺寸的所述非晶硅图形；如图15所示，图15显示为刻蚀形成非晶硅图形的结构示意图。该步骤三按照所述光刻胶图形05对所述有机层04和所述非晶硅层03进行刻蚀，在所述第一氧化层02上形成非晶硅图形06，所述非晶硅图形的高度和关键尺寸满足该步骤中在刻蚀前所定义的高度和关键尺寸。本发明进一步地，本实施例的步骤三中的所述非晶硅图形06上的有机层被完全去除，亦即刻蚀形成所述非晶硅图形06后，所述有机层04已经被完全消耗，形成如图15所示的结构。
步骤四、在所述非晶硅图形顶部和侧壁以及暴露出的所述第一氧化层上表面覆盖第一氮化硅层；如图16所示，图16显示为在非晶硅图形及第一氧化层上覆盖第一氮化硅层后的结构示意图。本发明进一步地，本实施例的步骤四中形成所述第一氮化硅层07的方法为原子层沉积法。亦即该步骤采用原子层沉积法在所述非晶硅图形06的顶部、侧壁以及所述第一氧化层02的上表面同步沉积一层第一氮化硅层07。
步骤五、刻蚀去除所述非晶硅图形顶部的所述第一氮化硅层，将所述非晶硅图形顶部暴露出来，在所述非晶硅图形侧壁形成第一氮化硅侧壁图形；如图17所示，图17显示为本发明去除非晶硅图形顶部第一氮化硅层后的结构示意图。该步骤采用刻蚀法去除所述非晶硅图形06顶部的所述第一氮化硅层，保留所述非晶硅图形06侧壁的所述第一氮化硅层，依附在所述非晶硅图形06侧壁的所述第一氮化硅层形成了一个个依附于所述非晶硅图形侧壁的独立的结构，即所述第一氮化硅侧壁图形08。
步骤六、去除所述第一氮化硅侧壁图形之间的所述非晶硅图形；如图18所述，图18显示为本发明去除非晶硅图形后的结构示意图。去除所述非晶硅图形之后，所述第一氮化硅侧壁图形形成了一个个独立的结构。后续工艺中，按照所述第一氮化硅侧壁图形08进行进一步地自对准双重图形制作。
步骤七、定义鳍型晶体管形貌，沿所述第一氮化硅侧壁图形刻蚀所述第一氧化层和所述硅基底，形成具有定义的所述鳍型晶体管形貌的硅基底的核心图形以及位于所述核心图形上的第一氧化层图形；如图19所示，沿所述第一氮化硅侧壁图形08向下刻蚀所述第一氧化层02和所述硅基底01，形成如图19所示的核心图形10和位于所述核心图形10上的第一氧化层图形09，该步骤七在刻蚀完成后，所述核心图形的高度由鳍型晶体管形貌决定，所述第一氮化硅侧壁图形08被全部消耗，而所述第一氧化层没有被完全消耗，剩余的所述第一氧化层形成了所述第一氧化层图形09。
步骤八、去除所述第一氧化层图形；如图20所示，去除所述第一氧化层图形09后只保留了硅基底的所述核心图形10。
步骤九、在所述核心图形上覆盖一层薄型氮化硅层；具体地，步骤九中在所述核心图形上覆盖所述薄型氮化硅层的方法为原子层沉积法。如图21所示，图21显示为在核心图形上覆盖薄型氮化硅层后的结构示意图。该步骤九采用原子层沉积法，在所述核心图形10上沉积一层所述薄型氮化硅层11。
步骤十、沉积覆盖所述薄型氮化硅层并填充所述核心图形之间空隙的第二氧化层；具体地，本实施例中，步骤十中沉积所述第二氧化层的方法为流体化学气相沉积法。如图22所示，沉积的所述第二氧化层12不仅覆盖了所述薄型氮化硅层11的表面，在所述核心图形10之间的空隙，也被所述第二氧化层12填满。
步骤十一、研磨所述第二氧化层至露出所述核心图形顶部的所述薄型氮化硅层为止；进一步地，步骤十一对所述第二氧化层进行研磨的方法为化学机械研磨法。该步骤采用化学机械研磨法将所述核心图形顶部的薄型氮化硅层11上方的所述第二氧化层12进行研磨，研磨至所述核心图形10顶部的所述薄型氮化硅层11被暴露出来为止。
步骤十二、定义鳍型晶体管高度，对所述第二氧化层进行回刻，刻蚀至露出所述核心图形的高度满足所定义的鳍型晶体管高度为止；如图24所示，图24显示为对第二氧化层进行回刻后的结构示意图。
步骤十三、去除露出的所述核心图形侧壁和顶部的薄型氮化硅层；进一步地，步骤十三利用磷酸去除露出的所述核心图形侧壁和顶部的薄型氮化硅层。如图25所示，图25显示为本发明去除核心图形侧壁和顶部的薄型氮化硅层后的结构示意图。去除被暴露出的所述核心图形侧壁和顶部的薄型氮化硅层之后，留下暴露出的所述核心图形的一部分。
步骤十四、沉积第三氧化层以覆盖暴露的所述核心图形的顶部和侧壁。如图26所示，图26显示为在暴露出的核心图形顶部和侧壁形成第三氧化层后的结构示意图。该第三氧化层13沉积后覆盖了所述暴露出的所述核心图形的顶部和侧壁的部分，而并不填充在所述暴露出的核心图形之间的空隙。
综上所述，本发明的自对准双重图形制作方法定义出高度较低的非晶硅和氧化硅硬掩膜，定义出高度较低的自对准双重图形硬掩膜，并在鳍型晶体管工艺后进行原子沉积氮化硅截止层，使用氧化硅和非晶硅取代现有技术中的氧化硅/氮化硅/氧化硅/非晶硅的结构，使用原子沉积技术在鳍型晶体管刻蚀工艺后进行氮化硅沉积化学机械研磨工艺的截止层，取代原本在核心刻蚀工艺前进行氮化硅沉积作为截止层，增加光阻间细填充工艺窗口，有效简化自对准双重制作工艺流程。所以，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (10)

1.一种自对准双重图形制作方法，其特征在于，至少包括以下步骤：
步骤一、提供硅基底，所述硅基底上设有第一氧化层；所述第一氧化层上设非晶硅层；所述非晶硅层上设有有机层；
步骤二、使用掩膜板定义多晶硅关键尺寸，之后在所述有机层上悬涂光刻胶，并按照所述多晶硅关键尺寸形成光刻胶图形；
步骤三、定义非晶硅图形的高度和关键尺寸，按照所述光刻胶图形刻蚀所述有机层及非晶硅层，刻蚀至将所述第一氧化层上表面暴露出，并形成具有所定义的高度和关键尺寸的所述非晶硅图形；
步骤四、在所述非晶硅图形顶部和侧壁以及暴露出的所述第一氧化层上表面覆盖第一氮化硅层；
步骤五、刻蚀去除所述非晶硅图形顶部的所述第一氮化硅层，将所述非晶硅图形顶部暴露出来，在所述非晶硅图形侧壁形成第一氮化硅侧壁图形；
步骤六、去除所述第一氮化硅侧壁图形之间的所述非晶硅图形；
步骤七、定义鳍型晶体管形貌，沿所述第一氮化硅侧壁图形刻蚀所述第一氧化层和所述硅基底，形成具有定义的所述鳍型晶体管形貌的硅基底的核心图形以及位于所述核心图形上的第一氧化层图形；
步骤八、去除所述第一氧化层图形；
步骤九、在所述核心图形上覆盖一层薄型氮化硅层；
步骤十、沉积覆盖所述薄型氮化硅层并填充所述核心图形之间空隙的第二氧化层；
步骤十一、研磨所述第二氧化层至露出所述核心图形顶部的所述薄型氮化硅层为止；
步骤十二、定义鳍型晶体管高度，对所述第二氧化层进行回刻，刻蚀至露出所述核心图形的高度满足所定义的鳍型晶体管高度为止；
步骤十三、去除露出的所述核心图形侧壁和顶部的薄型氮化硅层；
步骤十四、沉积第三氧化层以覆盖暴露的所述核心图形的顶部和侧壁。
2.根据权利要求1所述的自对准双重图形制作方法，其特征在于：步骤一中所述硅基底上设有的所述第一氧化层为氧化硅层，该氧化硅层的形成方法为：将所述硅基底上表面进行氧化，形成一层氧化硅层。
3.根据权利要求1所述的自对准双重图形制作方法，其特征在于：步骤一中所述第一氧化层上的非晶硅层的形成方法为：在所述第一氧化层上沉积非晶硅，形成所述非晶硅层。
4.根据权利要求1所述的自对准双重图形制作方法，其特征在于：步骤二中的所述光刻胶图形为多个相互间隔的条形结构。
5.根据权利要求1所述的自对准双重图形制作方法，其特征在于：步骤三中的所述非晶硅图形上的有机层被完全去除。
6.根据权利要求1所述的自对准双重图形制作方法，其特征在于：步骤四中形成所述第一氮化硅层的方法为原子层沉积法。
7.根据权利要求1所述的自对准双重图形制作方法，其特征在于：步骤九中在所述核心图形上覆盖所述薄型氮化硅层的方法为原子层沉积法。
8.根据权利要求1所述的自对准双重图形制作方法，其特征在于：步骤十中沉积所述第二氧化层的方法为流体化学气相沉积法。
9.根据权利要求1所述的自对准双重图形制作方法，其特征在于：步骤十一对所述第二氧化层进行研磨的方法为化学机械研磨法。
10.根据权利要求1所述的自对准双重图形制作方法，其特征在于：步骤十三利用磷酸去除露出的所述核心图形侧壁和顶部的薄型氮化硅层。
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