CN113675261A - n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法 - Google Patents
n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法 Download PDFInfo
- Publication number
- CN113675261A CN113675261A CN202110678790.9A CN202110678790A CN113675261A CN 113675261 A CN113675261 A CN 113675261A CN 202110678790 A CN202110678790 A CN 202110678790A CN 113675261 A CN113675261 A CN 113675261A
- Authority
- CN
- China
- Prior art keywords
- boron nitride
- type
- nitride film
- monocrystalline silicon
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 109
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000004544 sputter deposition Methods 0.000 claims abstract description 26
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 96
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 5
- 238000011065 in-situ storage Methods 0.000 abstract description 5
- 229910052709 silver Inorganic materials 0.000 abstract description 5
- 239000004332 silver Substances 0.000 abstract description 5
- 238000012360 testing method Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000861 blow drying Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002329 infrared spectrum Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0647—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
- H01L29/66916—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with a PN heterojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Formation Of Insulating Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electron Beam Exposure (AREA)
Abstract
本发明提供了一种n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法，属于半导体材料领域。本发明采用磁控溅射方法在p型(100)面单晶硅基底上制备氮化硼薄膜；采用共溅射手段，在位碳掺杂得到n型氮化硼薄膜；然后在n型氮化硼薄膜一侧和p型单晶硅一侧分别制作银电极，即制得n型氮化硼薄膜/p型单晶硅异质pn结原型器件。本发明通过对氮化硼薄膜进行在位碳掺杂，得到电学性能优异的n型电导层，较比于未掺杂、硅掺杂的氮化硼薄膜的电学性能有显著提升；获得了整流特性良好的pn结原型器件。
Description
本申请为申请日为2019年05月09日提交中国国家知识产权局、申请号为201910382492.8、发明名称为“n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法”的中国专利申请的分案申请。
技术领域
本发明涉及半导体材料领域，尤其涉及一种n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法。
背景技术
随着材料科学的发展和半导体技术的进步，硅基半导体器件的性能已逐渐达到硅材料理论的极限，而工业、科技与军事的发展却不断对半导体器件提出更苛刻的要求，开发具有高强度、高硬度、耐高温、高频率、抗辐射以及耐腐蚀等特性的新型材料已成为当务之急。
宽禁带半导体材料具有高硬度、良好的化学稳定性、高热导率、高击穿场强、高饱和漂移速度和小介电常数，可发射及探测至深紫外的短波长光等诸多特性，是满足工业半导体器件发展需求的理想材料，被称为“第三代半导体”。特别是氮化硼，作为三五族化合物半导体中最简单的材料，具有超宽的带隙(六角氮化硼为5.9eV；立方氮化硼为6.4eV)、极限的物理化学性质、以及优异的半导体和光电性能等，在军事、航空、工业等领域中的应用有着得天独厚的优势。
国际上对基于氮化硼材料的pn结方面的研究仍然处于初级阶段。已有的pn结方面的报道多为高温高压合成的氮化硼块体单晶，无法直接沉积在基底上，不利于在大规模、大面积的集成电路中应用。此外，关于高质量氮化硼薄膜合成和有效掺杂方面的报道也极为有限。氮化硼薄膜的生长窗口非常狭窄，特别是高质量的氮化硼薄膜的生长重复性非常差，沉积手段不同，工艺参数就完全不同，再昂贵精密的设备也是如此。同时，由于氮化硼的禁带宽，难以获得高浓度和低补偿的有效掺杂。因此，导致高质量氮化硼薄膜在半导体等相关领域的应用研究滞缓。
本发明拟采用磁控溅射手段，通过在位碳掺杂，在p型单晶硅基底上生长n型氮化硼薄膜，通过调节共溅射参数，提高氮化硼薄膜的电导率、掺杂率和迁移率等半导体特性，获得具有高整流性能的n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法，对高质量氮化硼薄膜在半导体、电子工业等领域的应用提供重要的依据。
发明内容
本发明的目的是提供一种n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法。
本发明采用的技术方案是：
一种n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法，其特征在于，所述方法包括以下步骤：(1)采用磁控溅射方法在p型单晶硅基底上制备碳掺杂氮化硼薄膜；(2)分别在n型氮化硼薄膜/p型单晶硅异质pn结两侧制备欧姆电极，即制得所述n型氮化硼薄膜/p型单晶硅异质pn结原型器件。
所述磁控溅射设备可以商用或是自行搭建。
所述步骤(2)磁控溅射的靶材为含碳的六角氮化硼靶，或六角氮化硼和碳单质分别作为靶材，采用双靶共溅射。优选为含碳的六角氮化硼靶。
所述步骤(1)磁控溅射方法按以下步骤进行：对磁控溅射室进行预抽真空后加热基底到25～800℃，优选为100～600℃；继续抽真空，直至达到1×10-4～1×10-5Pa后，优选为10-5Pa；通入氩气50～100sccm和氮气0～50sccm至工作气压1～3Pa，优选为氩气50sccm和氮气0～50sccm；施加基底负偏压0～-200V，优选为基底负偏压-100～-150V；控制基底和靶材的距离4～8cm，优选为6～8cm；设置靶溅射功率80～200W并起辉，优选为120～150W；进行薄膜溅射，溅射的时间为30min～3h，制备得到厚度100～1000nm的碳掺杂的氮化硼薄膜，其掺杂浓度为1018～1020cm-3，即获得n型氮化硼薄膜/p型单晶硅异质pn结。
所述步骤(2)中在n型氮化硼薄膜/p型单晶硅异质pn结两侧制备欧姆电极，可以使用常规的制作电极方法，是本领域技术人员公知的技术。
本发明还提供按照上述方法制备得到的n型氮化硼薄膜/p型单晶硅异质pn结。
本发明提供的n型氮化硼薄膜层具有较高的电导率、掺杂率和迁移率等半导体特性，更进一步提供的n型氮化硼薄膜/p型单晶硅异质pn结具有良好的整流性能。
本发明提供一种上述n型氮化硼薄膜/p型单晶硅异质pn结在半导体器件等领域的应用。
本发明的有益效果主要体现在：
(1)本发明通过在位碳掺杂的方式在p型单晶硅基底上生长高质量的n型氮化硼薄膜，可以通过调节生长参数来同时提高氮化硼薄膜的生长质量和掺杂质量，解决了离子注入等非在位掺杂手段通常造成的样品缺陷密度高、补偿高、掺杂效率低等缺点，使得碳单质有效地掺杂到氮化硼基体内，从而改善氮化硼薄膜的掺杂效率、迁移率和电导率等重要半导体性能参数。
(2)本发明采用磁控溅射方法，可以制备大面积的均匀致密的氮化硼薄膜。该方法成本低廉、技术工艺可控、便于操作，易于工业化推广。
(3)本发明通过对氮化硼薄膜进行有效的掺杂，克服了氮化硼薄膜本征电阻高，拓宽其在半导体器件领域内仅仅能做集成电路的绝缘层和保护层等的使用，使其向高可靠和高性能的半导体功能材料方面转型。
(4)本发明提供的具有良好整流性能的n型氮化硼薄膜/p型单晶硅异质pn结原型器件，具有较高的击穿电压和工作电压，并且较低的漏电流，整流比较高，为氮化硼薄膜在宽禁带半导体的潜在应用领域中提供科学依据和技术支持。
附图说明
构成本申请的一部分的说明书附图用来提供对本申请的进一步理解，本申请的示意性实施例及其说明用于解释本申请，并不构成对本申请的不当限定。
图1为本发明实施例1制得的氮化硼薄膜的扫描电子显微镜照片；
图2为本发明实施例2制得的氮化硼薄膜的扫描电子显微镜照片；
图3为本发明实施例3制得的氮化硼薄膜的扫描电子显微镜照片；
图4为本发明实施例4制得的氮化硼薄膜的扫描电子显微镜照片；
图5为本发明实施例1～4制得的氮化硼薄膜的傅里叶红外变换光谱图；
图6为本发明实施例1～4制得的n型氮化硼薄膜/p型硅异质pn结在室温下的I-V曲线图。
具体实施方式
下面将结合具体实施例对本发明进行进一步清楚、完整的描述，但本发明的保护范围并不仅限于此。
实施例1
将按所需尺寸切好的p型硅(100)单晶片依次在丙酮、乙醇、去离子水中超声清洗后，用氮气吹干后放在样品架上，送入真空沉积室，沉积室内真空度抽至3×10-5Pa，加热基底到500℃；继续抽真空，待沉积室的背底真空再次达到3×10-5Pa时，通入反应工作气体氩气50sccm至工作气压为2Pa；基底与靶间的距离为8cm，加基底负偏压-150V，设置靶溅射功率150W后起辉，预溅射2min后，挡板移开，进行薄膜溅射，薄膜溅射时间为2h，即得到n型氮化硼薄膜/p型单晶硅异质pn结。分别在n型氮化硼薄膜/p型单晶硅的异质pn结两侧制备银电极，形成欧姆接触，即制得所述n型氮化硼薄膜/p型单晶硅异质pn结原型器件，采用半导体测试系统获得器件的I-V曲线。
图1为实施例1制得的氮化硼薄膜的扫描电子显微镜照片，可见薄膜表面致密、平整、颗粒均匀。图5为实施例1～4制备得到的氮化硼薄膜的红外光谱图，其中实施例1所制备得到的氮化硼薄膜在770cm-1处为B-N特征峰，在923cm-1处为C-N特征峰，1100cm-1处为C-B特征峰，在1239cm-1处为B-O特征峰。用HL5500霍尔测试系统测得此氮化硼薄膜为n型半导体，其掺杂浓度为1020cm-3，迁移率为5.29cm2/Vs，电阻率为4.1×10-3Ωcm。图6为实施例1～4制得的n型氮化硼薄膜/p型硅异质pn结在室温下的I-V曲线图。测试结果表明，室温下实施例1所制备的异质pn结在±5V处的整流率约为115，反向漏电流约为7×10-8A，具有明显的整流特性。在最大电压量程±10V处，仍未获得饱和时的最大整流率，但从趋势看正向电流远未达到饱和，即pn结的实际整流率应该更高，且击穿电压大于10V。
实施例2
将按所需尺寸切好的p型硅(100)单晶片依次在丙酮、乙醇、去离子水中超声清洗后，用氮气吹干后放在样品架上，送入真空沉积室，沉积室内真空度抽至3×10-5Pa，加热基底到500℃；继续抽真空，待沉积室的背底真空再次达到3×10-5Pa时，通入反应工作气体氩气50sccm和氮气20sccm至工作气压为2Pa；基底与靶间的距离为8cm，加基底负偏压-150V，设置靶溅射功率150W后起辉，预溅射2min后，挡板移开，进行薄膜溅射，薄膜溅射时间为2h，即得到n型氮化硼薄膜/p型单晶硅异质pn结。分别在n型氮化硼薄膜/p型单晶硅异质pn结两侧制备银电极，形成欧姆接触，即制得所述n型氮化硼薄膜/p型单晶硅异质pn结原型器件，采用半导体测试系统获得器件的I-V曲线。
图2为实施例2制得的氮化硼薄膜的扫描电子显微镜照片，可见薄膜致密、平整、颗粒均匀。图5为实施例1～4制得的氮化硼薄膜的红外光谱图，其中实施例2所制得的氮化硼薄膜在774cm-1处为B-N特征峰，在923cm-1处为C-N特征峰，1104cm-1处为C-B特征峰，在1251cm-1处为B-O特征峰。用HL5500霍尔测试系统测得此氮化硼薄膜为n型半导体，其掺杂浓度为1019cm-3，迁移率为214.33cm2/Vs，电阻率为2.12×10-3Ωcm。图6为实施例1～4制得的n型氮化硼薄膜/p型硅异质pn结在室温下的I-V曲线图。测试结果表明，室温下实施例2所制备的异质pn结在±5V处的整流率约为21.5，反向漏电流约为2.7×10-6A，具有明显的整流特性。在最大电压量程约±10V处，仍未获得饱和时的最大整流率，但从趋势看正向电流远未达到饱和，即pn结的实际整流率更高，且击穿电压大于10V。
实施例3
将按所需尺寸切好的p型硅(100)单晶片依次在丙酮、乙醇、去离子水中超声清洗后，用氮气吹干后放在样品架上，送入真空沉积室，沉积室内真空度抽至3×10-5Pa，加热基底到500℃；继续抽真空，待沉积室的背底真空再次达到3×10-5Pa时，通入反应工作气体氩气50sccm和氮气40sccm至工作气压为2Pa；基底与靶间的距离为8cm，加基底负偏压-150V，设置靶溅射功率150W后起辉，预溅射2min后，挡板移开，进行薄膜溅射，薄膜溅射时间为2h，即得到n型氮化硼薄膜/p型单晶硅异质pn结。分别在n型氮化硼薄膜/p型单晶硅异质pn结两侧制备银电极，形成欧姆接触，即制得所述n型氮化硼薄膜/p型单晶硅异质pn结原型器件，采用半导体测试系统获得器件的I-V曲线。
图3为实施例3制得的氮化硼薄膜的扫描电子显微镜照片，可见薄膜表面致密、平整、颗粒均匀。图5为实施例1～4制得的氮化硼薄膜的红外光谱图，其中实施例3所制得的氮化硼薄膜在774cm-1处为B-N特征峰，在936cm-1处为C-N特征峰，1107cm-1处为C-B特征峰，在1251cm-1处为B-O特征峰。用HL5500霍尔测试系统测得此氮化硼薄膜为n型半导体，其掺杂浓度为1019cm-3，迁移率为214cm2/Vs，电阻率为2.08×10-3Ωcm。图6为实施例1～4制得的n型氮化硼薄膜/p型硅异质pn结在室温下的I-V曲线图。测试结果表明，室温下实施例3所制备的异质pn结在±5V处的整流率约为12.3，在反向漏电流约为8.1×10-6A，具有明显的整流特性。在最大电压量程约±10V处，仍未获得饱和时的最大整流率，但从趋势看正向电流远未达到饱和，即pn结的实际整流率更高，且击穿电压大于10V。
实施例4
将按所需尺寸切好的p型硅(100)单晶片依次在丙酮、乙醇、去离子水中超声清洗后，用氮气吹干后放在样品架上，送入真空沉积室，沉积室内真空度抽至3×10-5Pa，加热基底到500℃；继续抽真空，待沉积室的背底真空再次达到3×10-5Pa时，通入反应工作气体氩气50sccm、氮气50sccm至工作气压为2Pa；基底与靶间的距离为8cm，加基底负偏压-150V，设置靶溅射功率150W后起辉，预溅射2min后，挡板移开，进行薄膜溅射，薄膜溅射时间为2h，即得到n型氮化硼薄膜/p型单晶硅异质pn结。分别在n型氮化硼薄膜/p型单晶硅异质pn结两侧制备银电极，形成欧姆接触，即制得所述n型氮化硼薄膜/p型单晶硅异质pn结原型器件，采用半导体测试系统获得器件的I-V曲线。
图4为实施例4制得的氮化硼薄膜的扫描电子显微镜照片，可见薄膜表面致密、平整、颗粒均匀。图5为实施例1～4制得的氮化硼薄膜的红外光谱图，其中实施例4所制得的氮化硼薄膜在776cm-1处为B-N特征峰，在932cm-1处为C-N特征峰，1104cm-1处为C-B特征峰，在1251cm-1处为B-O特征峰。用HL5500霍尔测试系统测得此氮化硼薄膜为n型半导体，其掺杂浓度为1019cm-3，迁移率为193.67cm2/Vs，电阻率为2.1×10-3Ωcm。图6为实施例1～4制得的n型氮化硼薄膜/p型硅异质pn结在室温下的I-V曲线图。测试结果表明，室温下实施例4所制备的异质pn结在±5V处的整流率约为3，反向漏电流约为1.6×10-5A，具有明显的整流特性。在最大电压量程约±10V处，仍未获得饱和时的最大整流率，但从趋势看正向电流远未达到饱和，即pn结的实际整流率更高，且击穿电压大于10V。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。
Claims (10)
1.一种n型碳掺杂氮化硼薄膜/p型单晶硅异质pn结原型器件的制备方法，其特征在于，为以下步骤：
(1)采用磁控溅射方法在p型单晶硅基底上制备碳掺杂氮化硼薄膜；所述p型单晶硅基底的厚度为100～500μm，所述p型单晶硅基底的电阻率为1～5Ωcm，所述磁控溅射的靶材为含碳的六角氮化硼靶；
所述磁控溅射方法按以下步骤进行：
对磁控溅射室进行预抽真空后加热所述p型单晶硅基底至25～800℃；
继续对磁控溅射室抽真空，直至达到1×10-4～1×10-5Pa后；
向磁控溅射室通入氩气50～100sccm和氮气0～50sccm至工作气压1～3Pa；
施加p型单晶硅基底负偏压0～-200V；
控制p型单晶硅基底和靶材的距离为4～8cm；
设置靶溅射功率80～200W并起辉；
进行薄膜溅射，溅射的时间为30min～3h，制备得到碳掺杂的氮化硼薄膜；所述碳掺杂的氮化硼薄膜的厚度为100～1000nm，所述碳掺杂的氮化硼薄膜的电阻率为10-4～10-3Ωcm，所述碳掺杂的氮化硼薄膜的碳掺杂浓度为1018～1020cm-3，即得到所述n型碳掺杂氮化硼薄膜/p型单晶硅异质pn结；
(2)分别在n型碳掺杂氮化硼薄膜/p型单晶硅异质pn结两侧制备Ag接触电极，即制得所述n型碳掺杂氮化硼薄膜/p型单晶硅异质pn结原型器件。
2.根据权利要求1所述的制备方法，其特征在于，对磁控溅射室进行预抽真空后加热所述p型单晶硅基底至100～600℃。
3.根据权利要求1所述的制备方法，其特征在于，抽真空后，向磁控溅射室通入氩气50sccm和氮气0～50sccm至工作气压1～3Pa。
4.根据权利要求1所述的制备方法，其特征在于，向磁控溅射室通入氩气和氮气至工作气压后，施加所述p型单晶硅基底负偏压-100～-150V。
5.根据权利要求1所述的制备方法，其特征在于，向磁控溅射室通入氩气和氮气至工作气压后，控制所述p型单晶硅基底和靶材的距离为6～8cm。
6.根据权利要求1所述的制备方法，其特征在于，向磁控溅射室通入氩气和氮气至工作气压后，设置靶溅射功率120～150W并起辉。
7.根据权利要求1所述的制备方法，其特征在于，进行薄膜溅射，溅射的时间为2h。
8.根据权利要求1所述的制备方法，其特征在于，所述p型单晶硅基底依次在丙酮、乙醇、去离子水中超声清洗后，用氮气吹干。
9.权利要求1所述的制备方法制得的一种n型碳掺杂氮化硼薄膜/p型单晶硅异质pn结原型器件，其特征在于，包括n型碳掺杂氮化硼薄膜层、p型单晶硅层和设置在n型碳掺杂氮化硼薄膜/p型单晶硅异质pn结两侧的Ag接触电极，所述n型碳掺杂氮化硼薄膜层与p型单晶硅层之间形成异质结，所述n型碳掺杂氮化硼薄膜层是磁控溅射含碳的六角氮化硼靶形成的n型碳掺杂氮化硼薄膜层；所述p型单晶硅层的厚度为100～500μm，所述p型单晶硅层的电阻率为1～5Ωcm，所述n型碳掺杂氮化硼薄膜层的厚度为100～1000nm，所述n型碳掺杂氮化硼薄膜层中碳的掺杂浓度为1018～1020cm-3，所述n型碳掺杂氮化硼薄膜层的电阻率为10-4～10-3Ωcm。
10.权利要求9所述一种n型氮化硼薄膜/p型单晶硅异质pn结原型器件在半导体器件领域的应用。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110678790.9A CN113675261A (zh) | 2019-05-09 | 2019-05-09 | n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110678790.9A CN113675261A (zh) | 2019-05-09 | 2019-05-09 | n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法 |
| CN201910382492.8A CN110085679A (zh) | 2019-05-09 | 2019-05-09 | n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910382492.8A Division CN110085679A (zh) | 2019-05-09 | 2019-05-09 | n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113675261A true CN113675261A (zh) | 2021-11-19 |
Family
ID=67419381
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910382492.8A Pending CN110085679A (zh) | 2019-05-09 | 2019-05-09 | n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法 |
| CN202110678790.9A Pending CN113675261A (zh) | 2019-05-09 | 2019-05-09 | n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910382492.8A Pending CN110085679A (zh) | 2019-05-09 | 2019-05-09 | n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN110085679A (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110791805A (zh) * | 2019-10-31 | 2020-02-14 | 中国电子科技集团公司第十三研究所 | 一种衬底、外延片及其生长方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1211636A (zh) * | 1998-07-24 | 1999-03-24 | 吉林大学 | 单晶硅－纳米晶立方氮化硼薄膜类p－n结及其制作方法 |
| CN104882366A (zh) * | 2015-03-31 | 2015-09-02 | 浙江工业大学 | 一种n型纳米金刚石薄膜/p型单晶硅的异质pn结原型器件及其制备方法 |
| CN109161844A (zh) * | 2018-08-03 | 2019-01-08 | 吉林大学 | 一种包络高取向氮化硼纳米晶的硼碳氮薄膜及其制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101719504B (zh) * | 2009-12-03 | 2011-10-12 | 厦门大学 | 用于光电单片集成的硅基光电探测器及其制备方法 |
| CN102332495A (zh) * | 2011-09-26 | 2012-01-25 | 中国科学院宁波材料技术与工程研究所 | 一种晶体硅太阳能电池的制作方法 |
| CN103031516B (zh) * | 2013-01-18 | 2014-12-17 | 浙江大学 | 一种六角相氮化硼薄膜的制备方法 |
-
2019
- 2019-05-09 CN CN201910382492.8A patent/CN110085679A/zh active Pending
- 2019-05-09 CN CN202110678790.9A patent/CN113675261A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1211636A (zh) * | 1998-07-24 | 1999-03-24 | 吉林大学 | 单晶硅－纳米晶立方氮化硼薄膜类p－n结及其制作方法 |
| CN104882366A (zh) * | 2015-03-31 | 2015-09-02 | 浙江工业大学 | 一种n型纳米金刚石薄膜/p型单晶硅的异质pn结原型器件及其制备方法 |
| CN109161844A (zh) * | 2018-08-03 | 2019-01-08 | 吉林大学 | 一种包络高取向氮化硼纳米晶的硼碳氮薄膜及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110085679A (zh) | 2019-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107142460B (zh) | 制造硅异质结太阳能电池的方法与设备 | |
| CN111725072B (zh) | 一种电子浓度稳定的高质量氧化镓薄膜及其制备方法 | |
| CN109585592B (zh) | p-BN/i-AlGaN/n-AlGaN的紫外探测器及制作方法 | |
| CN112086344B (zh) | 一种铝镓氧/氧化镓异质结薄膜的制备方法及其在真空紫外探测中的应用 | |
| CN106711022A (zh) | 一种生长掺杂界面清晰的碳化硅外延薄膜的制备方法 | |
| JP5269414B2 (ja) | 大気圧水素プラズマを用いた膜製造方法、精製膜製造方法及び装置 | |
| CN101339906A (zh) | 新型环境半导体光电子材料β－FeSi2薄膜的制备工艺 | |
| CN100483626C (zh) | 立方氮化硼薄膜的p型掺杂方法 | |
| CN106868596A (zh) | 基于原子层沉积氮化铝的氮化镓生长方法和氮化镓激光器 | |
| US5442199A (en) | Diamond hetero-junction rectifying element | |
| CN102903616A (zh) | 基于ZnO衬底的石墨烯CVD直接外延生长方法及制造的器件 | |
| CN113675261A (zh) | n型氮化硼薄膜/p型单晶硅异质pn结原型器件及制备方法 | |
| CN110265500B (zh) | 一种4H-SiC像素肖特基辐射探测器及其制备方法 | |
| CN111710752A (zh) | 基于立方氮化硼厚膜的msm型深紫外光电探测器及制备方法 | |
| US10804104B2 (en) | Semiconductor device and method for forming p-type conductive channel in diamond using abrupt heterojunction | |
| TWI404129B (zh) | Method for manufacturing carbon film with semiconductor properties | |
| CN106024862B (zh) | 一种带有电极的金刚石薄膜/GaN异质结的制备方法 | |
| Phani et al. | n-type conductivity in c-BN films deposited by microwave plasma-assisted chemical vapour deposition | |
| CN110061046B (zh) | n型硼碳氮薄膜/p型单晶硅异质pn结原型器件及制备方法 | |
| JP7400389B2 (ja) | 炭化珪素多結晶膜、炭化珪素多結晶膜の製造方法および炭化珪素多結晶膜の成膜装置 | |
| CN102903617A (zh) | 基于GaN衬底的石墨烯CVD直接外延生长方法及制造的器件 | |
| CN111733456B (zh) | 用于AlN单晶生长的复合籽晶及其制备方法 | |
| CN112695380A (zh) | 一种新型透明导电氧化物薄膜的制备方法及其应用 | |
| CN109881248A (zh) | 氮硫共掺杂n型半导体金刚石材料及其制备方法 | |
| Hassan et al. | Electrical resistivities of the diamond-like carbon films fabricated from methane and acetylene using RF plasma |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |