CN113671340B - Switch parameter testing device of IGBT - Google Patents
Switch parameter testing device of IGBT Download PDFInfo
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- CN113671340B CN113671340B CN202111223878.8A CN202111223878A CN113671340B CN 113671340 B CN113671340 B CN 113671340B CN 202111223878 A CN202111223878 A CN 202111223878A CN 113671340 B CN113671340 B CN 113671340B
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Abstract
The invention discloses a Switch parameter testing device of IGBT, comprising: the device comprises a power supply module, a control module, a positive voltage input end, a negative voltage input end, an access resistance adjusting module, an inductor, a fly-wheel diode, a collector connecting node, a grid connecting node, an emitter connecting node, an interelectrode voltage sampling circuit, an interelectrode current sampling circuit, a grid voltage sampling circuit, an interelectrode current output node, an interelectrode voltage output node and a grid voltage output node; by providing the Switch parameter testing device of the IGBT, the Switch parameter testing device of the IGBT can test the Switch parameters of the IGBT device in a multi-parameter mode, and is rich in functions. The Switch parameter of the IGBT device can be conveniently tested. The invention is mainly used for the technical field of semiconductor testing.
Description
Technical Field
The invention relates to the technical field of semiconductor testing, in particular to a Switch parameter testing device of an IGBT.
Background
With the development of semiconductor technology, IGBTs are developed from modules to miniaturized packages. Meanwhile, medium and low power IGBTs are also developed. The Switch parameter is one of the necessary test items of the IGBT, and the test parameters include switching time, switching delay, switching loss and the like.
The existing testing instrument for the Switch parameters of the IGBT generally tests the individual parameters of the Switch parameters of the specific IGBT, and the functionality is not strong. Therefore, how to perform multi-parameter testing on the Switch parameter of the IGBT by using one instrument becomes a technical problem to be solved urgently in the industry.
Disclosure of Invention
The invention aims to provide a Switch parameter testing device of an IGBT (insulated gate bipolar transistor), which is used for solving one or more technical problems in the prior art and at least providing a beneficial selection or creation condition.
The solution of the invention for solving the technical problem is as follows: provided is a Switch parameter testing device of an IGBT, comprising: the device comprises a power supply module, a control module, a positive voltage input end, a negative voltage input end, an access resistance adjusting module, an inductor, a fly-wheel diode, a collector connecting node, a grid connecting node, an emitter connecting node, an interelectrode voltage sampling circuit, an interelectrode current sampling circuit, a grid voltage sampling circuit, an interelectrode current output node, an interelectrode voltage output node and a grid voltage output node;
the anode voltage input end is connected with a first input end of the control module, the cathode voltage input end is connected with a second input end of the control module, the output end of the control module is connected with the input end of the access resistance adjusting module, the output end of the access resistance adjusting module is connected with the grid electrode connecting node, the collector electrode connecting node is connected with one end of the inductor and the anode of the fly-wheel diode, the other end of the inductor and the cathode of the fly-wheel diode are both connected with the anode of the power supply module, the emitter electrode connecting node is connected with the cathode of the power supply module, and the interelectrode voltage sampling circuit is used for collecting a signal of a voltage difference between the collector electrode connecting node and the emitter electrode connecting node and transmitting the signal to an interelectrode voltage output node;
the interelectrode current sampling circuit is used for collecting a signal of current flowing out of the emitter connecting node and transmitting the signal to an interelectrode current output node;
the grid voltage sampling circuit is used for collecting a signal of the voltage of the grid connection node and transmitting the signal to a grid voltage output node; the access resistance adjusting module is used for adjusting the resistance of the series gate connecting node; the collector connecting node is used for being connected with a collector of the IGBT device to be tested, the emitter connecting node is used for being connected with an emitter of the IGBT device to be tested, and the grid connecting node is used for being connected with a grid of the IGBT device to be tested; the negative pole of the power supply module is connected to the ground.
Further, the Switch parameter testing device of the IGBT further includes a soft protection Switch, which is connected in series between the positive electrode of the power module and the other end of the inductor, and is configured to disconnect the electrical connection between the inductor and the power module when the current flowing through the inductor is greater than a set threshold value.
Further, the access resistance adjustment module includes: the resistor string is formed by connecting at least two resistors in series, and each resistor is connected with a switch in parallel.
Further, the control module includes: the power amplifier comprises a first amplifier, a PMOS (P-channel metal oxide semiconductor) tube, a second amplifier, an NMOS (N-channel metal oxide semiconductor) tube and a control driving module, wherein the input end of the first amplifier is connected with the positive voltage input end, the output end of the first amplifier is connected with the source electrode of the PMOS tube, the drain electrode of the PMOS tube is connected with the input end of an access resistance adjusting module, the grid electrode of the PMOS tube is connected with the first output end of the control driving module, the input end of the second amplifier is connected with the negative voltage input end, the output end of the second amplifier is connected with the source electrode of the NMOS tube, the drain electrode of the NMOS tube is connected with the input end of the access resistance adjusting module, and the grid electrode of the NMOS tube is connected with the second output end of the control driving module.
Further, the interelectrode current sampling circuit includes: a coaxial resistor, a first attenuation circuit, a first emitter follower and a third amplifier;
one end of the coaxial resistor is connected with the emitter connection node and the input end of the first attenuation circuit respectively, the other end of the coaxial resistor is connected with the ground, the output end of the first attenuation circuit is connected with the input end of the first emitter follower, the output end of the first emitter follower is connected with the interelectrode current output node, the coaxial resistor is used for converting a current signal output from the emitter connection node into a voltage signal, the voltage signal enters the first emitter follower after being attenuated by the first attenuation circuit, the first emitter follower forms high input impedance and outputs the attenuated voltage signal to the third amplifier, and the third amplifier amplifies the attenuated voltage signal and transmits the amplified voltage signal to the interelectrode current output node.
Further, the interelectrode voltage sampling circuit includes: a second attenuation circuit, a third attenuation circuit, a second emitter follower, a third emitter follower and a voltage difference amplifier; the input end of the second attenuation circuit is connected with the collector connecting node, and the output end of the second attenuation circuit is connected with the input end of the second emitter follower;
the input end of the third attenuation circuit is connected with the emitter connection node, the output end of the third attenuation circuit is connected with the input end of a third emitter follower, the output end of the second emitter follower is connected with the first input end of a voltage difference amplifier, the output end of the third emitter follower is connected with the second input end of the voltage difference amplifier, the voltage difference amplifier is used for subtracting the voltage received by the first input end of the voltage difference amplifier from the voltage received by the second input end of the voltage difference amplifier to form an interelectrode voltage, and the interelectrode voltage is output through an interelectrode voltage output node.
Further, the gate voltage sampling circuit includes: the input end of the fourth attenuation circuit is connected with the grid connection node, the output end of the fourth attenuation circuit is connected with the input end of the fourth emitter follower, the output end of the fourth emitter follower is connected with the input end of the fourth amplifier, and the output end of the fourth amplifier is connected with the grid voltage output node.
The invention has at least the following beneficial effects: by providing the Switch parameter testing device of the IGBT, the Switch parameter testing device of the IGBT can test the Switch parameters of the IGBT device in a multi-parameter mode, and is rich in functions. The Switch parameter of the IGBT device can be conveniently tested.
Drawings
In order to more clearly illustrate the technical solution in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly described below.
Fig. 1 is a schematic circuit configuration diagram of a Switch parameter testing device of an IGBT.
Detailed Description
The conception, the specific structure, and the technical effects produced by the present invention will be clearly and completely described below in conjunction with the embodiments and the accompanying drawings to fully understand the objects, the features, and the effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and those skilled in the art can obtain other embodiments without inventive effort based on the embodiments of the present invention, and all embodiments are within the protection scope of the present invention. In addition, all the coupling/connection relationships mentioned herein do not mean that the components are directly connected, but mean that a better coupling structure can be formed by adding or reducing coupling accessories according to specific implementation conditions. All technical characteristics in the invention can be interactively combined on the premise of not conflicting with each other.
Embodiment 1, referring to fig. 1, a Switch parameter testing apparatus of an IGBT includes: the switching regulator includes a power module 100, a control module, a positive voltage input terminal 201, a negative voltage input terminal 202, an access resistance adjustment module 400, an inductor L, a freewheeling diode D, a collector connection node a, a gate connection node c, an emitter connection node b, an inter-electrode voltage sampling circuit, an inter-electrode current sampling circuit, a gate voltage sampling circuit, an inter-electrode current output node 602, an inter-electrode voltage output node 601, and a gate voltage output node 603.
The positive voltage input end 201 is connected with a first input end of the control module, the negative voltage input end 202 is connected with a second input end of the control module, an output end of the control module is connected with an input end of the access resistance adjusting module 400, an output end of the access resistance adjusting module 400 is connected with a grid connecting node c, a collector connecting node a is connected with one end of the inductor L and an anode of the fly-wheel diode D, the other end of the inductor L and a cathode of the fly-wheel diode D are both connected with a positive electrode of the power module 100, and an emitter connecting node b is connected with a negative electrode of the power module 100.
The interpolar voltage sampling circuit is used for collecting a signal of a voltage difference between a collector connecting node a and an emitter connecting node b and transmitting the signal to an interpolar voltage output node 601; the inter-pole current sampling circuit is configured to collect a signal of a current flowing from the emitter connection node b and transmit the signal to the inter-pole current output node 602.
The grid voltage sampling circuit is used for collecting a signal of the voltage of the grid connection node c and transmitting the signal to a grid voltage output node 603; the access resistance adjusting module 400 is configured to adjust a resistance of the series gate connection node c; the collector connecting node a is used for being connected with a collector of the IGBT device 500 to be tested, the emitter connecting node b is used for being connected with an emitter of the IGBT device 500 to be tested, and the grid connecting node c is used for being connected with a grid of the IGBT device 500 to be tested; the negative pole of the power module 100 is connected to ground.
The power module 100 is used for supplying power to the whole testing device; the positive voltage input terminal 201 is used for connecting an external positive voltage, and of course, the magnitude of the positive voltage can be adjusted as needed. The negative voltage input terminal 202 is used for connecting an external negative voltage, and of course, the magnitude of the negative voltage can be adjusted as needed.
The control module is used for comprising: the positive voltage connected to the positive voltage input end 201 can act on the grid of the IGBT device 500 to be tested through the connection resistance adjusting module 400 through output pulse control; the output pulse control enables the cathode voltage connected to the cathode voltage input terminal 202 to act on the gate of the IGBT device 500 to be tested through the connection resistance adjustment module 400. When the positive voltage acts on the grid electrode of the IGBT device 500 to be tested, the IGBT device 500 to be tested is started; when the cathode voltage acts on the gate of the IGBT device 500 to be tested, the IGBT device 500 to be tested is reliably turned off.
The function of the access resistance adjusting module 400 is to output the series resistance of the IGBT device 500 to be tested, and the speed of switching the IGBT device 500 to be tested can be increased by connecting the series resistance in series to the gate of the IGBT device 500 to be tested. Different series resistors need to be arranged in different IGBT devices 500 to be tested, and therefore, different series resistors can be adjusted by the access resistor adjusting module 400 to meet the requirements of different IGBT devices 500 to be tested.
The inter-pole current output node 602 is used for outputting a signal of inter-pole current change; the inter-electrode voltage output node 601 is used for outputting a signal of inter-reaction-electrode voltage change; the gate voltage output node 603 is used to output a signal that reflects the change in gate voltage.
When the IGBT device 500 to be tested is tested, the grid electrode of the IGBT device 500 to be tested is connected with the grid electrode connecting node c, the collector electrode of the IGBT device 500 to be tested is connected with the collector electrode connecting node a, and the emitter electrode of the IGBT device 500 to be tested is connected with the emitter electrode connecting node b. The interelectrode voltage output node 601, the interelectrode current output node 602, and the gate voltage output node 603 are connected to an oscilloscope.
The specific test process of the Switch parameter of the IGBT device is as follows:
step 1, before testing, testing parameters are adjusted through the control module and the access resistance adjusting module 400. The size of the series resistor is adjusted by the access adjusting module to adapt to the IGBT device 500 to be tested. The interpolar current of the IGBT to be tested is adjusted through the control module, and the interpolar current of the IGBT device 500 to be tested can reach 80% -100% of a nominal value through setting two control pulses, namely the first control pulse. The second control pulse allows the inter-electrode current of the IGBT device 500 under test to reach 120% of the nominal value. After the two pulses, the performance of the IGBT device 500 to be tested has no problem, and the overload performance of the IGBT device 500 to be tested is considered to be qualified.
After the overload performance of the IGBT device is tested, the current fall time and the voltage rise time of the IGBT device 500 to be tested can be tested. The specific tests are as follows:
and setting the beat of the control module for controlling the IGBT device 500 to be tested to be turned on or turned off. Through the beat, at the time T0, the control module controls the IGBT to be tested to be switched off. The power module 100 supplies power to the IGBT device 500 to be tested, and the inter-electrode voltage of the IGBT device 500 to be tested rises. The waveform of the interelectrode voltage is detected by an oscilloscope, and the waveform of the interelectrode current is detected by the oscilloscope. Of course, the upper limit of the inter-electrode voltage of the IGBT device 500 to be tested and the upper limit of the inter-electrode current of the IGBT device 500 to be tested are defined in advance. When the inter-electrode current of the IGBT device 500 to be tested reaches the test upper limit, the power supply of the IGBT device 500 to be tested needs to be cut off, so as to avoid damage to the IGBT device 500 to be tested.
At the time T1, the control module controls the IGBT device 500 to be tested to be turned on, and the power module 100 discharges the IGBT device 500 to be tested through the inductor L. The inter-electrode current starts to rise, and the oscilloscope detects the time when the inter-electrode current rises to the reference value, which is the current rise time of the IGBT device 500 to be tested.
At time T2, the control module controls the IGBT device 500 to be tested to turn off, and at this time, the inter-electrode current begins to decrease. The oscilloscope detects the time when the inter-electrode current drops to the reference value, and the time is the current drop time of the IGBT device 500 to be tested.
And after the time T2, delaying for a period of time less than 4 mu s to the time T3 and the time T3, and controlling the IGBT device 500 to be tested to be opened by the control module. Since the time from the time T2 to the time T3 is short, the inductor L consumes little electricity when discharging through the freewheeling diode D, and therefore, the inductor L discharges the IGBT device 500 to be tested with a current close to the time T2, and the oscilloscope detects the time required for the inter-electrode current to reach the current at the time T2 from the current at the time T3, which is the on-time parameter of the IGBT device 500 to be tested.
After the testing of the turn-on time parameter is completed, the control module keeps turning on the IGBT device 500 to be tested, and the inter-electrode current continuously rises until the inter-electrode current rises to the maximum value. The control module turns off the IGBT device 500 to be tested. This process is the over-current performance test process of the IGBT device 500 to be tested.
And after the overcurrent performance of the IGBT device 500 to be tested is tested, the Switch parameter of the IGBT device 500 to be tested is considered to be tested. The control module controls the IGBT device 500 to be tested to be disconnected, the time delay is more than or equal to 50 microseconds after the inter-pole current is reduced to 0, and the power supply of the IGBT device 500 to be tested is closed.
In some preferred embodiments, the Switch parameter testing apparatus of the IGBT further includes a soft protection Switch 600, where the soft protection Switch 600 is connected in series between the positive electrode of the power module 100 and the other end of the inductor L, and is configured to disconnect the electrical connection between the inductor L and the power module 100 when the current flowing through the inductor L is greater than a set threshold. The soft protection switch 600 can disconnect the electrical connection between the inductor L and the power module 100 in real time, so that the power supply of the IGBT device 500 to be tested can be controlled. The IGBT device 500 to be tested can be effectively protected.
In some preferred embodiments, the access resistance adjusting module 400 includes: the resistor string 402 is formed by connecting at least two resistor strings 402, and each resistor is connected with a switch 401 in parallel. The switch 401 can select the resistance value in the access resistor string 402, so as to flexibly adjust the series-access resistance of the IGBT device 500 to be tested.
In some preferred embodiments, the control module comprises: first amplifier 301, PMOS pipe 210, second amplifier 302, NMOS pipe 220 and control drive module 200, the input and the positive voltage input end 201 of first amplifier 301 are connected, the output of first amplifier 301 is connected with the source electrode of PMOS pipe 210, the drain electrode of PMOS pipe 210 is connected with the input of access resistance adjustment module 400, the grid of PMOS pipe 210 is connected with the first output of control drive module 200, the input and the negative voltage input 202 of second amplifier 302 are connected, the output of second amplifier 302 is connected with the source electrode of NMOS pipe 220, the drain electrode of NMOS pipe 220 is connected with the input of access resistance adjustment module 400, the grid of NMOS pipe 220 is connected with the second output of control drive module 200.
The control driving module 200 may control the electrical connection between the positive voltage input terminal 201 and the access resistance adjusting module 400 or the electrical connection between the negative voltage input terminal 202 and the access resistance adjusting module 400 through the first output terminal and the second output terminal thereof.
In some preferred embodiments, the inter-pole current sampling circuit includes: a coaxial resistor CSD, a first attenuator circuit 101, a first emitter follower 310, and a third amplifier 303; one end of the coaxial resistor CSD is connected to the emitter connection node b and the input end of the first attenuation circuit 101, the other end of the coaxial resistor CSD is connected to ground, the output end of the first attenuation circuit 101 is connected to the input end of the first emitter follower 310, the output end of the first emitter follower 310 is connected to the inter-electrode current output node 602, the coaxial resistor CSD is configured to convert a current signal output from the emitter connection node b into a voltage signal, the voltage signal is attenuated by the first attenuation circuit 101 and then enters the first emitter follower 310, the first emitter follower 310 forms high input impedance and outputs the attenuated voltage signal to the third amplifier 303, and the third amplifier 303 amplifies the attenuated voltage signal and transmits the amplified voltage signal to the inter-electrode current output node 602.
In some preferred embodiments, the inter-pole voltage sampling circuit includes: a second attenuation circuit 102, a third attenuation circuit 103, a second emitter follower 320, a third emitter follower 330, and a voltage difference amplifier 305; an input terminal of the second attenuation circuit 102 is connected to the collector connection node a, and an output terminal of the second attenuation circuit 102 is connected to an input terminal of the second emitter follower 320; the input end of the third attenuation circuit 103 is connected to the emitter connection node b, the output end of the third attenuation circuit 103 is connected to the input end of a third emitter follower 330, the output end of the second emitter follower 320 is connected to the first input end of a voltage difference amplifier 305, the output end of the third emitter follower 330 is connected to the second input end of the voltage difference amplifier 305, the voltage difference amplifier 305 is configured to perform a difference between the voltage received at the first input end and the voltage received at the second input end thereof to form an inter-electrode voltage, and the inter-electrode voltage is output through an inter-electrode voltage output node 601.
In some preferred embodiments, the gate voltage sampling circuit includes: a fourth attenuation circuit 104, a fourth emitter follower 340 and a fourth amplifier 304, wherein an input terminal of the fourth attenuation circuit 104 is connected to the gate connection node c, an output terminal of the fourth attenuation circuit 104 is connected to an input terminal of the fourth emitter follower 340, an output terminal of the fourth emitter follower 340 is connected to an input terminal of the fourth amplifier 304, and an output terminal of the fourth amplifier 304 is connected to the gate voltage output node 603.
In some embodiments, the first attenuation circuit 101 includes: the emitter follower circuit comprises a first resistor R1, a second resistor R2, a first capacitor C1 and a second capacitor C2, wherein one end of the first resistor R1 is connected with one end of the second capacitor C2 and one end of a coaxial resistor CSDCSD respectively, and the other end of the first resistor R1 is connected with the other end of the second capacitor C2, one end of the second resistor R2, one end of the first capacitor C1 and the input end of the first emitter follower 310 respectively. The other end of the second resistor R2 and the other end of the first capacitor C1 are both connected to ground. In first decay circuit 101, first resistance R1 and second resistance R2 form voltage divider circuit, and the signal carries out the partial pressure decay, and second electric capacity C2 is parallelly connected with first resistance R1, and first electric capacity C1 is parallelly connected with second resistance R2, first electric capacity C1 and second electric capacity C2 combined action to the effect of putting in order is carried out the border of the voltage signal of one end to coaxial resistance CSD, makes the border of signal more clear.
In some embodiments, the second attenuation circuit 102 includes: the emitter follower circuit comprises a third resistor R3, a fourth resistor R4, a third capacitor C3 and a fourth capacitor C4, wherein one end of the third resistor R3 is connected with one end of the third capacitor C3 and a collector connecting node a, the other end of the third resistor R3 is connected with the other end of the third capacitor C3, one end of the fourth resistor R4, one end of the fourth capacitor C4 and the input end of the second emitter follower 320, and the other end of the fourth resistor R4 and the other end of the fourth capacitor C4 are connected to the ground.
In the second attenuation circuit 102, the third resistor R3 and the fourth resistor R4 form a voltage division circuit to divide and attenuate the signal, the third capacitor C3 is connected in parallel with the third resistor R3, the fourth capacitor C4 is connected in parallel with the fourth resistor R4, and the third capacitor C3 and the fourth capacitor C4 act together, so that the edge of the voltage signal of the collector connecting node a is sorted, and the edge of the signal is clearer.
The third attenuation circuit 103 includes: one end of the fifth resistor R5 is connected to one end of the fifth capacitor C5 and the emitter connection node b, the other end of the fifth resistor R5 is connected to the other end of the fifth capacitor C5, one end of the sixth resistor R6, one end of the sixth capacitor C6 and the input end of the third emitter follower 330, and the other end of the sixth resistor R6 and the other end of the sixth capacitor C6 are all connected to ground.
In the third attenuation circuit 103, a fifth resistor R5 and a sixth resistor R6 form a voltage division circuit to divide and attenuate a signal, a fifth capacitor C5 is connected in parallel with the fifth resistor R5, a sixth capacitor C6 is connected in parallel with the sixth resistor R6, and the fifth capacitor C5 and the sixth capacitor C6 work together to arrange the edge of the voltage signal at the emitter connection node b, so that the edge of the signal is clearer.
The fourth attenuation circuit 104 includes: a seventh resistor R7, an eighth resistor R8, a seventh capacitor C7 and an eighth capacitor C8, wherein one end of the seventh resistor R7 is connected to one end of the eighth capacitor C8 and the gate connection node C, the other end of the seventh resistor R7 is connected to the other end of the seventh capacitor C7, one end of the eighth resistor R8, one end of the eighth capacitor C8 and the input end of the fourth emitter follower 340, and the other end of the eighth resistor R8 and the other end of the seventh capacitor C7 are all connected to ground.
In the fourth attenuation circuit 104, the seventh resistor R7 and the eighth resistor R8 form a voltage division circuit to divide and attenuate the signal, the seventh capacitor C7 is connected in parallel with the eighth resistor R8, the eighth capacitor C8 is connected in parallel with the seventh resistor R7, and the seventh capacitor C7 and the eighth capacitor C8 work together to arrange the edge of the voltage signal at the gate connection node C, so that the edge of the signal is clearer.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that the present invention is not limited to the details of the embodiments shown and described, but is capable of numerous equivalents and substitutions without departing from the spirit of the invention and its scope is defined by the claims appended hereto.
Claims (5)
1. A Switch parameter testing device of IGBT is characterized by comprising: the device comprises a power supply module, a control module, a positive voltage input end, a negative voltage input end, an access resistance adjusting module, an inductor, a fly-wheel diode, a collector connecting node, a grid connecting node, an emitter connecting node, an interelectrode voltage sampling circuit, an interelectrode current sampling circuit, a grid voltage sampling circuit, an interelectrode current output node, an interelectrode voltage output node and a grid voltage output node;
the anode voltage input end is connected with a first input end of the control module, the cathode voltage input end is connected with a second input end of the control module, the output end of the control module is connected with the input end of the access resistance adjusting module, the output end of the access resistance adjusting module is connected with the grid electrode connecting node, the collector electrode connecting node is connected with one end of the inductor and the anode of the fly-wheel diode, the other end of the inductor and the cathode of the fly-wheel diode are both connected with the anode of the power supply module, the emitter electrode connecting node is connected with the cathode of the power supply module, and the interelectrode voltage sampling circuit is used for collecting a signal of a voltage difference between the collector electrode connecting node and the emitter electrode connecting node and transmitting the signal to an interelectrode voltage output node;
the interelectrode current sampling circuit is used for collecting a signal of current flowing out of the emitter connecting node and transmitting the signal to an interelectrode current output node;
the grid voltage sampling circuit is used for collecting a signal of the voltage of the grid connection node and transmitting the signal to a grid voltage output node; the access resistance adjusting module is used for adjusting the resistance of the series gate connecting node; the collector connecting node is used for being connected with a collector of the IGBT device to be tested, the emitter connecting node is used for being connected with an emitter of the IGBT device to be tested, and the grid connecting node is used for being connected with a grid of the IGBT device to be tested; the negative pole of the power supply module is connected to the ground;
the interelectrode current sampling circuit includes: a coaxial resistor, a first attenuation circuit, a first emitter follower and a third amplifier;
one end of the coaxial resistor is connected with an emitter connection node and an input end of a first attenuation circuit respectively, the other end of the coaxial resistor is connected with the ground, an output end of the first attenuation circuit is connected with an input end of a first emitter follower, an output end of the first emitter follower is connected with an interelectrode current output node, the coaxial resistor is used for converting a current signal output from the emitter connection node into a voltage signal, the voltage signal is attenuated by the first attenuation circuit and then enters the first emitter follower, the first emitter follower forms high input impedance and outputs the attenuated voltage signal to a third amplifier, and the third amplifier amplifies the attenuated voltage signal and transmits the attenuated voltage signal to the interelectrode current output node;
the gate voltage sampling circuit includes: the input end of the fourth attenuation circuit is connected with the grid connection node, the output end of the fourth attenuation circuit is connected with the input end of the fourth emitter follower, the output end of the fourth emitter follower is connected with the input end of the fourth amplifier, and the output end of the fourth amplifier is connected with the grid voltage output node;
the first attenuation circuit includes: the emitter follower comprises a first resistor, a second resistor, a first capacitor and a second capacitor, wherein one end of the first resistor is connected with one end of the second capacitor and one end of a coaxial resistor respectively, the other end of the first resistor is connected with the other end of the second capacitor, one end of the second resistor, one end of the first capacitor and the input end of the first emitter follower respectively, and the other end of the second resistor and the other end of the first capacitor are connected with the ground.
2. The apparatus of claim 1, further comprising a soft protection Switch, wherein the soft protection Switch is connected in series between the positive electrode of the power module and the other end of the inductor, and is configured to disconnect the electrical connection between the inductor and the power module when a current flowing through the inductor is greater than a predetermined threshold.
3. The apparatus for testing Switch parameter of IGBT according to claim 1, wherein the access resistance adjusting module comprises: the resistor string is formed by connecting at least two resistors in series, and each resistor is connected with a switch in parallel.
4. The apparatus for testing the Switch parameter of the IGBT according to claim 1, wherein the control module comprises: the power amplifier comprises a first amplifier, a PMOS (P-channel metal oxide semiconductor) tube, a second amplifier, an NMOS (N-channel metal oxide semiconductor) tube and a control driving module, wherein the input end of the first amplifier is connected with the positive voltage input end, the output end of the first amplifier is connected with the source electrode of the PMOS tube, the drain electrode of the PMOS tube is connected with the input end of an access resistance adjusting module, the grid electrode of the PMOS tube is connected with the first output end of the control driving module, the input end of the second amplifier is connected with the negative voltage input end, the output end of the second amplifier is connected with the source electrode of the NMOS tube, the drain electrode of the NMOS tube is connected with the input end of the access resistance adjusting module, and the grid electrode of the NMOS tube is connected with the second output end of the control driving module.
5. The apparatus for testing the Switch parameter of the IGBT according to claim 1, wherein the inter-pole voltage sampling circuit comprises: a second attenuation circuit, a third attenuation circuit, a second emitter follower, a third emitter follower and a voltage difference amplifier; the input end of the second attenuation circuit is connected with the collector connecting node, and the output end of the second attenuation circuit is connected with the input end of the second emitter follower;
the input end of the third attenuation circuit is connected with the emitter connection node, the output end of the third attenuation circuit is connected with the input end of a third emitter follower, the output end of the second emitter follower is connected with the first input end of a voltage difference amplifier, the output end of the third emitter follower is connected with the second input end of the voltage difference amplifier, the voltage difference amplifier is used for subtracting the voltage received by the first input end of the voltage difference amplifier from the voltage received by the second input end of the voltage difference amplifier to form an interelectrode voltage, and the interelectrode voltage is output through an interelectrode voltage output node.
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