CN115840123B - Transistor parameter testing device and testing method - Google Patents
Transistor parameter testing device and testing method Download PDFInfo
- Publication number
- CN115840123B CN115840123B CN202310180810.9A CN202310180810A CN115840123B CN 115840123 B CN115840123 B CN 115840123B CN 202310180810 A CN202310180810 A CN 202310180810A CN 115840123 B CN115840123 B CN 115840123B
- Authority
- CN
- China
- Prior art keywords
- transistor
- tested
- voltage
- circuit
- test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention provides a transistor parameter testing device and a testing method, which relate to the field of semiconductor device measurement, wherein the device comprises: the output end of the constant voltage and constant current circuit is connected with the drain electrode of the transistor to be tested, and constant voltage and constant current are provided for the transistor to be tested; the input end of the test circuit is connected with the first output end of the controller, the first output end of the test circuit is connected with the transistor to be tested, the second output end of the test circuit is connected with the input end of the controller, and voltage and current signals of the transistor to be tested are collected; the constant voltage and constant current circuit comprises a resistor array; and the controller determines the parameter value of the transistor to be tested according to the voltage and current signals of the transistor to be tested, which are acquired by the test circuit. The transistor parameter testing device and the transistor parameter testing method solve the output problem of the high-voltage high-power testing power supply so as to realize high-precision testing of the high-power transistor.
Description
Technical Field
The invention relates to the field of semiconductor device measurement, in particular to a transistor parameter testing device and a transistor parameter testing method.
Background
With the development of semiconductor technology, the precision requirement of transistor testers is also increasing. When the transistor is subjected to parameter test, the current is larger when the transistor is turned on, and the set high voltage needs to be quickly returned when the transistor is turned off, so that the transistor is tested with larger instant power for the constant voltage and constant current source.
In the prior art, the parameter test of the high-power transistor can be performed through a constant voltage and constant current type or an inductance current limiting pulse type of the switching power supply, however, the precision requirement of the parameter test cannot be met by a testing device supporting high power, so that how to perform the parameter test on the high-power transistor becomes a key problem.
Disclosure of Invention
Therefore, the invention aims to solve the technical problem that the high-power transistor parameter cannot be tested in the prior art, and further provides a transistor parameter testing device and a transistor parameter testing method.
According to a first aspect, the present invention provides a transistor parameter testing apparatus, the apparatus comprising: a controller, a constant voltage and constant current circuit and a test circuit;
the output end of the constant voltage and constant current circuit is connected with the drain electrode of the transistor to be tested and is used for providing constant voltage and constant current for the transistor to be tested;
the input end of the test circuit is connected with the first output end of the controller, the first output end of the test circuit is connected with the transistor to be tested, the second output end of the test circuit is connected with the input end of the controller, and the test circuit is used for providing grid voltage or current bias for the transistor to be tested according to a control signal of the controller and collecting voltage and current signals of all pins of the transistor to be tested;
the constant voltage and constant current circuit includes: the constant voltage source is connected with the input end of the resistor array, and the output end of the resistor array is connected with the transistor to be tested through the constant current control circuit;
the resistance value adjusting assembly includes: a first resistor and a relay connected in parallel with the first resistor;
the second output end of the controller is respectively connected with the control ends of the relays of the constant voltage and constant current circuit, and the controller adjusts the constant voltage and constant current output by the constant voltage and constant current circuit by controlling the actions of the relays;
and the controller determines the parameter value of the transistor to be tested according to the voltage and current signals of the transistor to be tested, which are acquired by the test circuit.
In one embodiment, the test circuit includes a test source and an acquisition circuit;
the input end of the test source is connected with the first output end of the controller, the first output end is connected with the grid electrode of the transistor to be tested, and the second output end is connected with the source electrode of the transistor to be tested and is used for providing grid voltage or current bias for the transistor to be tested according to the control signal of the controller;
the input end of the acquisition circuit is connected with the transistor to be detected, and the output end of the acquisition circuit is connected with the input end of the controller and is used for acquiring voltage and current signals of the source electrode, the grid electrode and the drain electrode of the transistor to be detected.
In an embodiment, the test circuit further includes a polarity switch, a control end of the polarity switch is connected to the controller, two fixed ends are respectively connected to two output ends of the constant voltage and constant current circuit in a one-to-one correspondence manner, and two movable ends corresponding to each fixed end are respectively connected to a source electrode and a drain electrode of the transistor to be tested.
In one embodiment, the acquisition circuit comprises a second comparator, a third comparator and a current acquisition device;
the positive input end of the second comparator is connected with the drain electrode of the transistor to be tested, the negative input end of the second comparator is connected with the source electrode of the transistor to be tested, and the output end of the second comparator is connected with the input end of the controller;
the positive input end of the third comparator is connected with the grid electrode of the transistor to be tested, the negative input end of the third comparator is connected with the source electrode of the transistor to be tested, and the output end of the third comparator is connected with the input end of the controller;
the current acquisition device is arranged on the source electrode of the transistor to be detected and is connected with the input end of the controller.
In one embodiment, the constant current control circuit comprises a first comparator, a second resistor, a third resistor and a plurality of power tubes;
the positive input end of the first comparator is externally connected with reference voltage and is connected with the transistor to be tested through the second resistor, the negative input end of the first comparator is connected with the output end through a capacitor, and the output ends of the first comparator are respectively connected with the control ends of the power tubes;
the first output end of each power tube is respectively connected with the output end of the resistor array, and the second output end is connected between the second resistor and the transistor to be tested through the third resistor.
In one embodiment, the polarity switch is a relay.
In an embodiment, the acquisition circuit further comprises: and the input end of the analog-to-digital converter is respectively connected with the output end of the second comparator, the output end of the third comparator and the current acquisition device, and the output end of the analog-to-digital converter is connected with the input end of the controller.
In an embodiment, the current collecting device is a current transformer.
According to a second aspect, the present invention provides a transistor parameter testing method, for use in a controller as in any of the first aspect and alternative embodiments thereof, the method comprising:
acquiring a test voltage and a test current;
calculating a test resistance value based on the test voltage and the test current;
controlling relay action of each resistance regulating component based on the test resistance value, and sending a control signal to a test circuit so that the test circuit provides grid voltage or current bias for a transistor to be tested;
receiving voltage and current signals of the transistor to be tested, which are acquired by the test circuit; and determining the parameter value of the transistor to be tested according to the voltage and current signals.
In an embodiment, the test circuit further includes a polarity switch, a control end of the polarity switch is connected to the controller, two fixed ends are respectively connected to two output ends of the constant voltage and constant current circuit in a one-to-one correspondence manner, two movable ends corresponding to each fixed end are respectively connected to a source electrode and a drain electrode of the transistor to be tested, and before controlling the relay of each resistance adjusting component to act based on the test resistance value, the method further includes:
acquiring polarity information of a transistor to be tested;
and controlling a polarity switching switch in a test circuit to act based on the polarity information of the transistor to be tested, so that the constant voltage and constant current circuit is connected with the transistor to be tested according to the polarity of the transistor to be tested.
The technical scheme of the invention has the following advantages:
the embodiment of the invention provides a transistor parameter testing device, which solves the problem of providing high-power voltage and current for a transistor to be tested by adopting a mode that a resistor array is connected in series with a constant-voltage constant-current circuit, and reduces the bearing power of the transistor in the constant-voltage constant-current circuit in the process of testing the transistor parameter to be tested by the voltage division of the resistor array so as to ensure that the transistor is in a safe working interval so as to avoid damage.
The embodiment of the invention provides a transistor parameter testing method, which calculates a test resistance value according to a test voltage and a test current, and controls a relay in a resistance adjusting component according to the test resistance value, so that the adjustability of the resistance value is realized, and the bearing power of a transistor in a constant voltage and constant current circuit is reduced when the transistor to be tested is subjected to parameter testing, so that the transistor is in a safe working range, and damage is avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a block diagram of a transistor parameter testing apparatus according to an embodiment of the present invention;
fig. 2 is a circuit diagram of a constant voltage and constant current circuit according to an embodiment of the present invention;
FIG. 3 is a circuit diagram of a test circuit according to an embodiment of the present invention;
fig. 4 is a flowchart of a transistor parameter testing method according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
With the development of semiconductor technology, the power of the transistor is larger and larger, and the requirement on the tester is higher and higher. In the parameter test process, the transistor has larger instantaneous power, for example, when testing 1000V and 300A transistors, the instantaneous power required to be born by the transistor is 300kW.
In order to solve the problem of high-power test, the common scheme comprises a switching power supply constant voltage constant current type and an inductance current limiting pulse type. The switching power supply has low constant current speed and low precision. The inductance current limiting pulse type is low in test accuracy because of inaccurate current adjustment, and the value is tested by adopting an approximate current testing method. Therefore, it is not easy to perform parameter testing on the high-power transistor.
In order to realize parameter testing of a high-power transistor, an embodiment of the invention provides a transistor parameter testing device, which comprises a controller 1, a constant voltage and constant current circuit 2 and a testing circuit 3 as shown in fig. 1.
The output end of the constant voltage and constant current circuit 2 is connected with the drain electrode of the transistor to be tested and is used for providing constant voltage and constant current for the transistor to be tested.
The input end of the test circuit 3 is connected with the first output end of the controller 1, the first output end is connected with the transistor to be tested, the second output end is connected with the input end of the controller 1, and the test circuit is used for providing grid voltage or current bias for the transistor to be tested according to the control signal of the controller 1 and collecting voltage and current signals of each pin of the transistor to be tested.
The controller 1 determines the parameter value of the transistor to be tested according to the voltage and current signals of the transistor to be tested, which are collected by the test circuit 3.
The controller 1 is a programmable controller, and the constant voltage and the constant current are provided by the constant voltage and constant current circuit 2, so that the transistor to be tested is in a constant voltage and constant current environment, and the test circuit 3 collects voltage and current signals of the transistor to be tested, so as to avoid the situation that the transistor is damaged due to overlarge test instantaneous power.
Specifically, as shown in fig. 2, the constant voltage and constant current circuit 2 includes: the constant voltage source 21, the constant current control circuit 22 and the resistor array 23 formed by connecting a plurality of resistance adjusting components in series are connected, the constant voltage source 21 is connected with the input end of the resistor array 23, and the output end of the resistor array 23 is connected with the transistor to be tested through the constant current control circuit 22.
The resistor array 23 specifically includes a first resistor and a relay connected in parallel with the first resistor, and illustratively, in this embodiment of the present application, sixteen groups of resistor arrays 23 are taken as an example, the resistor array 23 includes sixteen resistors R1 to R16 and sixteen relays K1A to K16A, each relay is connected in parallel with a corresponding resistor, and the relay operates according to a control signal sent by the controller 1.
In order to realize the output of a constant current under the condition of high power, the resistor array 23 and the constant voltage and constant current circuit 2 are combined, so that accurate constant current output can be output under the condition of high power, and the measurement accuracy is improved.
The second output end of the controller 1 is respectively connected with the control ends of the relays of the constant voltage and constant current circuit 2, and the controller 1 adjusts the constant voltage and constant current output by the constant voltage and constant current circuit 2 by controlling the actions of the relays.
The controller 1 determines the parameter value of the transistor to be tested according to the voltage and current signals of the transistor to be tested, which are collected by the test circuit 3.
In the embodiment of the present invention, the constant voltage source 21 can realize a program-controlled constant voltage function and output a constant voltage. The constant current is supplied by a constant voltage source 21 and a resistor array 23 to provide a constant voltage and a constant current to the transistor under test. Sixteen relays are used as sixteen-bit digital potentiometers, and sixteen-bit resistor arrays 23 are formed by adopting the relays and resistors in series connection, so that the resistance value of the resistor is adjusted according to actual test requirements in the parameter test process, and the adjustability of the resistance value of the resistor is ensured.
The resistor array 23 is added on the basis of simulating negative feedback constant voltage and constant current, and the resistance is regulated by a relay, wherein the resistor adopts a high-power constantan wire resistor, the constantan wire resistor bears larger overcurrent and can bear larger power, so that the problem that the transistor is damaged due to the fact that the transistor is instantaneously subjected to high power and exceeds a safe working interval is avoided.
Through the embodiment, the problem that high-power accurate voltage and current are provided for the transistor to be tested is solved by adopting the mode that the resistor array is connected with the constant-voltage constant-current circuit in series, and the bearing power of the transistor in the constant-voltage constant-current circuit is reduced in the parameter testing process of the transistor to be tested through the voltage division of the resistor array, so that the transistor is in a safe working interval of the transistor to be tested, and damage is avoided.
Specifically, in one embodiment, as shown in fig. 3, the test circuit 3 includes a test source 31 and an acquisition circuit 32.
The input end of the test source 31 is connected with the first output end of the controller 1, the first output end is connected with the grid electrode of the transistor to be tested, and the second output end is connected with the source electrode of the transistor to be tested and is used for providing grid voltage or current bias for the transistor to be tested according to the control signal of the controller 1.
The input end of the acquisition circuit 32 is connected with the transistor to be detected, and the output end is connected with the input end of the controller 1, and is used for acquiring voltage and current signals of the source electrode, the grid electrode and the drain electrode of the transistor to be detected.
In the embodiment of the present invention, the test source 31 is a floating gate test VI source, which is a high-precision four-quadrant power module that works with an isolated power supply for providing a voltage or current bias to the gate of the transistor to be tested.
The collection circuit 32 may be a voltage-current measurement module, which is used to collect voltage-current signals of each pin of the transistor to be tested, or may be another module capable of collecting voltage-current signals of the transistor, which is not limited herein.
Specifically, in one embodiment, as shown in fig. 3, the test circuit 3 further includes a polarity switch 33, a control end of the polarity switch 33 is connected to the controller 1, two fixed ends are respectively connected to two output ends of the constant voltage and constant current circuit 2 in a one-to-one correspondence manner, and two movable ends corresponding to each fixed end are respectively connected to a source electrode and a drain electrode of the transistor to be tested.
In the embodiment of the present invention, the polarity switch 33 is a relay, and the polarity switch 33 includes two normally closed ends and two active ends, wherein the two normally closed ends of the polarity switch 33 are respectively connected with the HF end and the LF end of the constant voltage and constant current circuit 2, and the two active ends are respectively connected with the source and the drain of the transistor to be tested.
Illustratively, when the transistor to be tested is positive, the active terminal of the polarity switch 33 is inactive, the HF terminal of the constant voltage constant current circuit 2 is connected to the drain of the transistor to be tested, and the LF terminal is connected to the source of the transistor to be tested; when the transistor to be tested is negative, the active end of the polarity switch 33 is switched, the HF end of the constant voltage and constant current circuit 2 is connected with the source of the transistor to be tested, and the LF end is connected with the drain of the transistor to be tested.
The polarity switch 33 may be any other controlled switch capable of implementing a corresponding function, which is not limited herein.
The polarity of the output of the constant voltage constant current circuit 2 is turned by the polarity switching switch 33, so that the testing of the transistors of both positive and negative polarities can be realized to increase the suitability between the testing device and the transistors of different polarities.
Specifically, in one embodiment, as shown in fig. 3, the acquisition circuit 32 includes a second comparator U2, a third comparator U3, and a current acquisition device 321.
The positive input end of the second comparator U2 is connected with the drain electrode of the transistor to be detected, the negative input end is connected with the source electrode of the transistor to be detected, and the output end is connected with the input end of the controller 1;
the positive input end of the third comparator U3 is connected with the grid electrode of the transistor to be tested, the negative input end is connected with the source electrode of the transistor to be tested, and the output end is connected with the input end of the controller 1;
the current collection device 321 is disposed at the source of the transistor to be tested and connected to the input terminal of the controller 1.
In the embodiment of the present invention, the current collecting device 321 may be a current transformer, or may be other components capable of collecting current, which is not limited herein.
Specifically, in one embodiment, as shown in fig. 2, the constant current control circuit 22 includes a first comparator U1, a second resistor R20, a third resistor R19, and a plurality of power transistors.
The positive input end of the first comparator U1 is externally connected with a reference voltage and is connected with a transistor to be tested through a second resistor R20, the positive input end of the first comparator U1 is also connected with a digital-to-analog converter through a fourth resistor R18, the negative input end of the first comparator U1 is connected with an output end through a capacitor C1, the negative input end of the first comparator U is also grounded through a fifth resistor R17, Q in QGND in fig. 2 represents different reference grounds and is used for distinguishing from the test ground GND, and the output ends of the first comparator U1 are respectively connected with control ends of power tubes.
The first output end of each power tube is respectively connected with the output end of the resistor array 23, and the second output end is connected between the second resistor R20 and the transistor to be tested through the third resistor R19.
In the embodiment of the invention, the power tubes comprise six power tubes Q1-Q6, and the output end of the first comparator U1 is connected with the control end of each power tube to control the conduction state of the power tubes Q1-Q6.
When the transistor to be tested is subjected to parameter test, the test source 31 and the constant current control circuit 22 output simultaneously, and the number of the power transistors is calculated by the maximum test power, the safe working interval of the power transistors and the overcurrent capacity.
Specifically, according to the power of the power tube and 80% of the safe working interval, the maximum power p of the single power tube is obtained. In order to make the constant current accurate, a certain DS voltage adjustment is necessary, in this embodiment, a DS voltage adjustment of 5-10V is selected, so that under the condition that the constant current is 300A, the maximum power p=10wt3000a=3kw of the power tubes, and the number n=p/P of the power tubes can not only ensure the normal constant current, but also reduce the number of the power tubes to the maximum extent, and can also achieve the purpose of saving cost.
Specifically, in one embodiment, as shown in fig. 3, the acquisition circuit 32 further includes: the input end of the analog-to-digital converter 322 is respectively connected with the output end of the second comparator U2, the output end of the third comparator U3 and the current acquisition device 321, and the output end of the analog-to-digital converter 322 is connected with the input end of the controller 1.
In the embodiment of the present invention, the input end of the analog-to-digital converter 322 includes three ends VCE SENSE, I SENSE, and VG SENSE, where the VCE SENSE end is connected to the output end of the second comparator U2, the I SENSE end is connected to the current collecting device 321, and the VG SENSE end is connected to the output end of the third comparator U3. The output of the analog-to-digital converter 322 is connected to the input of the controller 1 so that the controller 1 receives the signal collected by the analog-to-digital converter 322.
The embodiment of the invention also provides a transistor parameter testing method which is applied to the controller of the transistor parameter testing device, as shown in fig. 4, and comprises the following steps S101 to S104.
Step S101: and obtaining a test voltage and a test current.
In the embodiment of the invention, the test voltage and the test current input by the user are obtained, and when the test voltage and the test current input by the user are received, the parameter test is started to be performed on the transistor to be tested.
Step S102: a test resistance value is calculated based on the test voltage and the test current.
In the embodiment of the invention, the product of the test voltage U and the test current I is calculated according to the test voltage U and the test current I, and the corresponding power value is obtained. If the power value is smaller than 3kW, the transistor is a low-power transistor, and the parameter test is directly carried out on the transistor. If the power value is larger than 3kW, the transistor is a high-power transistor, and the corresponding test resistance value R set = (U*I-3000)/I 2 Wherein R is set Is 0 to 3.27KΩ.
Step S103: and controlling relay action of each resistance regulating component based on the test resistance value, and sending a control signal to the test circuit so that the test circuit provides grid voltage or current bias for the transistor to be tested.
In the embodiment of the invention, according to the test resistance value, the control signal of the relay is calculated according to the following formula:
D set = R set /3.27K*65535（1）
pair D set And rounding is carried out, the binary value is converted into sixteen-bit binary values, and the binary values are inverted according to bits, so that the control values of sixteen relays are obtained, wherein 1 is closed, and 0 is open.
For example, when the test resistance value is 50mΩ, dset is 0xFFFE, the corresponding binary values are 1111 1111 1111 1110, and the switches corresponding to K16 to K1 are respectively opened, and the other switches are closed.
Step S104: and receiving the voltage and current signals of the transistor to be tested, which are acquired by the test circuit, and determining the parameter value of the transistor to be tested according to the voltage and current signals.
In the embodiment of the invention, the test circuit finishes VGE, IC and VCE signal sampling, and after sampling, the output is closed, and the parameter test result is obtained for the sampled waveform through a waveform processing program. The processing of the sampled waveform by the waveform processing program is known in the art, and will not be described herein.
According to the embodiment, the test resistance value is calculated according to the test voltage and the test current, so that the relay in the resistance value adjusting component is controlled according to the test resistance value, and adjustability of the resistance value is achieved, and when the transistor to be tested is subjected to parameter test, the bearing power of the transistor in the constant voltage and constant current circuit is reduced, so that the transistor is in a safe working interval, and damage is avoided.
Specifically, in an embodiment, the transistor parameter testing method provided by the embodiment of the invention further includes the following steps:
step S201: and acquiring the polarity information of the transistor to be tested.
Step S202: and controlling a polarity switching switch in the test circuit to act based on the polarity information of the transistor to be tested, so that the constant voltage and constant current circuit is connected with the transistor to be tested according to the polarity of the transistor to be tested.
In the embodiment of the invention, when the polarities of the transistors to be tested are different, the polarity switching switch in the test circuit is required to switch the polarities, so that the polarity switching switch is controlled to act according to the polarity information of the transistors to be tested, and parameter test on the transistors with different polarities can be realized.
The automatic parameter test of the transistor is realized by controlling the action of the polarity change switch according to the polarity of the transistor to be tested, so that the parameter test is automatically carried out on the transistor to be tested after the action of the polarity change switch.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present invention.
Claims (9)
1. The transistor parameter testing device is characterized by comprising a controller, a constant voltage and constant current circuit and a testing circuit;
the output end of the constant voltage and constant current circuit is connected with the drain electrode of the transistor to be tested and is used for providing constant voltage and constant current for the transistor to be tested;
the input end of the test circuit is connected with the first output end of the controller, the first output end of the test circuit is connected with the transistor to be tested, the second output end of the test circuit is connected with the input end of the controller, and the test circuit is used for providing grid voltage or current bias for the transistor to be tested according to a control signal of the controller and collecting voltage and current signals of all pins of the transistor to be tested;
the constant voltage and constant current circuit includes: the constant voltage source is connected with the input end of the resistor array, and the output end of the resistor array is connected with the transistor to be tested through the constant current control circuit;
the resistance value adjusting assembly includes: a first resistor and a relay connected in parallel with the first resistor;
the second output end of the controller is respectively connected with the control ends of the relays of the constant voltage and constant current circuit, and the controller adjusts the constant voltage and constant current output by the constant voltage and constant current circuit by controlling the actions of the relays;
the controller determines the parameter value of the transistor to be tested according to the voltage and current signals of the transistor to be tested, which are acquired by the test circuit;
the constant current control circuit comprises a first comparator, a second resistor, a third resistor and a plurality of power tubes;
the positive input end of the first comparator is externally connected with reference voltage and is connected with the transistor to be tested through the second resistor, the negative input end of the first comparator is connected with the output end through a capacitor, and the output ends of the first comparator are respectively connected with the control ends of the power tubes;
the first output end of each power tube is respectively connected with the output end of the resistor array, and the second output end is connected between the second resistor and the transistor to be tested through the third resistor.
2. The apparatus of claim 1, wherein the test circuit comprises a test source and an acquisition circuit;
the input end of the test source is connected with the first output end of the controller, the first output end is connected with the grid electrode of the transistor to be tested, and the second output end is connected with the source electrode of the transistor to be tested and is used for providing grid voltage or current bias for the transistor to be tested according to the control signal of the controller;
the input end of the acquisition circuit is connected with the transistor to be detected, and the output end of the acquisition circuit is connected with the input end of the controller and is used for acquiring voltage and current signals of the source electrode, the grid electrode and the drain electrode of the transistor to be detected.
3. The device according to claim 2, wherein the test circuit further comprises a polarity switch, the control terminal of the polarity switch is connected to the controller, two fixed terminals are respectively connected to two output terminals of the constant voltage and constant current circuit in one-to-one correspondence, and two movable terminals corresponding to each fixed terminal are respectively connected to the source electrode and the drain electrode of the transistor to be tested.
4. The apparatus of claim 2, wherein the acquisition circuit comprises a second comparator, a third comparator, and a current acquisition device;
the positive input end of the second comparator is connected with the drain electrode of the transistor to be tested, the negative input end of the second comparator is connected with the source electrode of the transistor to be tested, and the output end of the second comparator is connected with the input end of the controller;
the positive input end of the third comparator is connected with the grid electrode of the transistor to be tested, the negative input end of the third comparator is connected with the source electrode of the transistor to be tested, and the output end of the third comparator is connected with the input end of the controller;
the current acquisition device is arranged on the source electrode of the transistor to be detected and is connected with the input end of the controller.
5. A device according to claim 3, wherein the polarity-switching switch is a relay.
6. The apparatus of claim 4, wherein the acquisition circuit further comprises: and the input end of the analog-to-digital converter is respectively connected with the output end of the second comparator, the output end of the third comparator and the current acquisition device, and the output end of the analog-to-digital converter is connected with the input end of the controller.
7. The device of claim 6, wherein the current collection device is a current transformer.
8. A transistor parameter testing method, applied to a controller of a transistor parameter testing apparatus according to any of claims 1-7, the method comprising:
acquiring a test voltage and a test current;
calculating a test resistance value based on the test voltage and the test current;
controlling relay action of each resistance regulating component based on the test resistance value, and sending a control signal to a test circuit so that the test circuit provides grid voltage or current bias for a transistor to be tested;
and receiving the voltage and current signals of the transistor to be tested, which are acquired by the test circuit, and determining the parameter value of the transistor to be tested according to the voltage and current signals.
9. The method of claim 8, wherein the test circuit further comprises a polarity switch, the polarity switch control terminal is connected to the controller, the two fixed terminals are respectively connected to the two output terminals of the constant voltage and constant current circuit in a one-to-one correspondence, the two movable terminals corresponding to each fixed terminal are respectively connected to the source and the drain of the transistor to be tested, and before controlling the relay of each resistance adjustment assembly to operate based on the test resistance value, the method further comprises:
acquiring polarity information of a transistor to be tested;
and controlling a polarity switching switch in a test circuit to act based on the polarity information of the transistor to be tested, so that the constant voltage and constant current circuit is connected with the transistor to be tested according to the polarity of the transistor to be tested.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310180810.9A CN115840123B (en) | 2023-03-01 | 2023-03-01 | Transistor parameter testing device and testing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310180810.9A CN115840123B (en) | 2023-03-01 | 2023-03-01 | Transistor parameter testing device and testing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115840123A CN115840123A (en) | 2023-03-24 |
| CN115840123B true CN115840123B (en) | 2023-05-09 |
Family
ID=85580214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310180810.9A Active CN115840123B (en) | 2023-03-01 | 2023-03-01 | Transistor parameter testing device and testing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115840123B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116449170B (en) * | 2023-06-14 | 2023-08-25 | 佛山市联动科技股份有限公司 | Testing device and testing method for testing two-pin device and three-pin device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320278B (en) * | 2008-06-25 | 2010-04-07 | 苏州中科半导体集成技术研发中心有限公司 | Cmos reference source |
| JP5578612B2 (en) * | 2010-07-30 | 2014-08-27 | 株式会社リガク | Current control device for electron emission device |
| CN202330630U (en) * | 2011-09-14 | 2012-07-11 | 常州科教城新能源汽车工程技术研究院 | Detecting circuit for current and working condition of MOS (Metal Oxide Semiconductor) tube |
| CN104090223B (en) * | 2014-07-16 | 2017-07-18 | 西安芯派电子科技有限公司 | The verification platform and method of testing of field-effect transistor SOA curves |
| CN104796138B (en) * | 2015-04-22 | 2017-12-26 | 西安电子科技大学 | A kind of output voltage swing corrects LC voltage controlled oscillators automatically |
| CN105021969B (en) * | 2015-07-10 | 2018-07-24 | 湘潭大学 | A kind of transistor amplification factor pulse test method |
| CN107229302B (en) * | 2017-06-30 | 2018-08-03 | 西安理工大学 | The system on chip of voltage controlled current source driving circuit and put forward high-precision method using it |
| CN107942159B (en) * | 2017-11-03 | 2020-07-03 | 国网浙江省电力公司电动汽车服务分公司 | Power test load of direct current charger |
| KR102266457B1 (en) * | 2019-11-22 | 2021-07-16 | 현대모비스 주식회사 | Load current monitoring apparatus and method |
| CN113671340B (en) * | 2021-10-21 | 2022-02-22 | 佛山市联动科技股份有限公司 | Switch parameter testing device of IGBT |
| CN114327128B (en) * | 2021-11-30 | 2023-11-03 | 北京奕斯伟计算技术股份有限公司 | Resistance compensation circuit and touch display device |
| CN115684864B (en) * | 2023-01-05 | 2023-03-31 | 佛山市联动科技股份有限公司 | Test circuit and test method suitable for switching time test and threshold voltage test |
-
2023
- 2023-03-01 CN CN202310180810.9A patent/CN115840123B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN115840123A (en) | 2023-03-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112285521B (en) | Self-correcting IGBT health monitoring method | |
| CN115840123B (en) | Transistor parameter testing device and testing method | |
| CN107345996A (en) | FET test circuit and method of testing | |
| CN101210950A (en) | Electronic components voltage-resisting test apparatus and method | |
| CN111446848B (en) | Power supply circuit with adjustable channel switch impedance and electronic equipment | |
| TWI484755B (en) | Switching device and test device | |
| CN111722072B (en) | High-voltage-resistance power semiconductor device conduction voltage drop on-line measurement circuit and system | |
| CN207882786U (en) | A kind of programme control precision adjustable direct voltage source | |
| CN112072762B (en) | Charging circuit and power terminal | |
| CN114113967A (en) | Source measurement unit test system and test method | |
| CN111650443A (en) | Simple capacitance value measuring circuit and method | |
| CN115236481B (en) | High-precision current detection method and chip module thereof | |
| CN110542722A (en) | Fault detection method and device for ultrasonic probe | |
| CN108572273B (en) | Low current measuring circuit and measuring method thereof | |
| CN109342931A (en) | A kind of the power interruptions test macro and its test method of precision voltage source | |
| CN215344364U (en) | Power device drive circuit and electronic equipment | |
| CN115728693A (en) | Power device testing device and calibration equipment and method thereof | |
| CN112363066B (en) | Battery testing method and device capable of automatically switching measuring ranges | |
| CN207037014U (en) | FET test circuit | |
| US10333462B2 (en) | Measuring apparatus for solar cell | |
| CN201096813Y (en) | Power adjustable load circuit | |
| CN212115425U (en) | Fatigue testing device | |
| CN116203373B (en) | Multifunctional semiconductor field effect transistor test circuit and method | |
| CN210444003U (en) | Power distribution module with overvoltage and overcurrent protection | |
| CN117665521A (en) | Testing arrangement that grid resistance infinitely variable control |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |