CN212784755U - Reference voltage generating circuit for IGBT short-circuit protection - Google Patents
Reference voltage generating circuit for IGBT short-circuit protection Download PDFInfo
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- CN212784755U CN212784755U CN202021513979.XU CN202021513979U CN212784755U CN 212784755 U CN212784755 U CN 212784755U CN 202021513979 U CN202021513979 U CN 202021513979U CN 212784755 U CN212784755 U CN 212784755U
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Abstract
The utility model discloses a reference voltage produces circuit for IGBT short-circuit protection, discharge module, reference voltage output module and state detection module including on-off control module, first module, the second of discharging. The switch control module is respectively connected with the first discharging module, the second discharging module, the reference voltage output module and the state detection module. The state detection module detects the short-circuit state of the IGBT and sends out a detection signal according to a detection result. The switch control module switches on or off the electric connection between the first discharging module and the reference voltage output module and the electric connection between the second discharging module and the reference voltage output module according to the detection signal, so that the voltage at the output end of the reference voltage output module is discharged at different rates under different states of the IGBT. Therefore, the reference voltage suitable for the voltage drop rate of the IGBT grid electrode can be generated, and the waveform is ideal, stable and reliable.
Description
Technical Field
The utility model relates to a IGBT driver chip field especially relates to a reference voltage produces circuit for IGBT short-circuit protection.
Background
The IGBT driver is widely applied to the hot door industry such as photovoltaic, wind power generation, frequency conversion and electric automobiles, but in practical application, the IGBT short circuit condition can occur due to various fault reasons, so that the IGBT rapidly generates heat, and if the short circuit condition is left for a certain time, for example, the short circuit time exceeds the typical short circuit time of the IGBT by 10us, the IGBT is burnt. Therefore, the IGBT needs to be turned off timely when a short circuit occurs, and the turn-off mode is usually to pull down the gate voltage of the IGBT, but if the turn-off speed of the IGBT is too fast, that is, the gate voltage dv/dt is too large, so that the drain current di/dt of the IGBT is too large, a very high overshoot voltage is generated at the drain of the IGBT due to the parasitic inductance of the drain of the IGBT, and this high voltage may break down and damage the IGBT device, even cause the IGBT module to explode, thereby causing more property loss.
Therefore, when the IGBT is short-circuited, it is desirable that the gate voltage of the IGBT slowly drops following a reference voltage that drops at an ideal rate so that the IGBT can be reliably turned off. In the design process, the problem of how to provide a voltage with an ideal rate drop as the reference voltage is very important.
SUMMERY OF THE UTILITY MODEL
In view of the above, it is desirable to provide a reference voltage generating circuit for IGBT short-circuit protection, which can generate an ideal and reliable reference voltage for turning off the IGBT when the IGBT is short-circuited.
The utility model discloses a reach the technical scheme that above-mentioned purpose proposed as follows:
a reference voltage generating circuit for IGBT short-circuit protection is used for generating a reference voltage for IGBT short-circuit protection when the IGBT is short-circuited, a reference voltage is generated that allows the gate voltage to fall in the same direction to achieve soft turn-off, the reference voltage generating circuit for IGBT short-circuit protection comprises a switch control module, a first discharging module, a second discharging module, a reference voltage output module and a state detection module, the switch control module is respectively and electrically connected with the first discharging module, the second discharging module, the reference voltage output module and the state detection module, the state detection module is used for detecting the short-circuit state of the IGBT, different detection signals are sent to the switch control module according to the detection result, and the switch control module is used for switching on or switching off the electric connection between the first discharging module and the reference voltage output module and the electric connection between the second discharging module and the reference voltage output module according to the detection signals;
when the state detection module detects that the IGBT is short-circuited, the state detection module sends a first state signal to the switch control module, the switch control module conducts the electric connection between the first discharging module and the reference voltage output module according to the first state signal, the first discharging module discharges the initial voltage at the output end of the reference voltage output module, so that the initial voltage at the output end of the reference voltage output module is reduced to a first voltage at a constant rate, and the first voltage is used for corresponding to the gate voltage of the IGBT of 0V;
when the state detection module detects that the IGBT is short-circuited and the grid voltage of the IGBT is 0V, the state detection module sends a second state signal to the switch control module, the switch control module conducts the electric connection between the second discharging module and the reference voltage output module according to the second state signal and turns off the electric connection between the first discharging module and the reference voltage output module, and the second discharging module discharges the first voltage at the output end of the reference voltage output module, so that the first voltage is quickly reduced to the second voltage.
Further, the switch control module includes a first delay unit and a first switch unit, the first delay unit is electrically connected between the state detection module and the first switch unit, the first switch unit is electrically connected between the reference voltage output module and the first discharge module, the first state signal includes a narrow pulse signal and a short circuit signal, the first switch unit is configured to receive the narrow pulse signal and conduct electrical connection between the reference voltage output module and the first discharge module according to the narrow pulse signal, the first discharge module performs constant current discharge on the initial voltage at the output end of the reference voltage output module, so that the initial voltage at the output end of the reference voltage output module is decreased to a third voltage at a constant rate, and the third voltage is greater than the first voltage, the first delay unit is used for receiving the short-circuit signal, delaying the short-circuit signal and transmitting the short-circuit signal to the first switch unit, wherein the delay time is longer than the time for the initial voltage to drop to the third voltage, the first switch unit is also used for conducting the electric connection between the reference voltage output module and the first discharging module according to the delayed short-circuit signal, and the first discharging module continues to perform constant-current discharging on the third voltage at the output end of the reference voltage output module, so that the third voltage drops to the first voltage at a constant speed.
Further, the switch control module further includes a second delay unit and a second switch unit, the second delay unit is electrically connected between the state detection module and the second switch unit, the second switch unit is electrically connected between the reference voltage output module and the second discharge module, the first switch unit receives the second state signal and cuts off the electrical connection between the reference voltage output module and the first discharge module according to the second state signal, the second delay unit receives the second state signal and transmits the second state signal to the second switch unit after delaying for a period of time, the second switch unit is used for conducting the electrical connection between the reference voltage output module and the second discharge module according to the delayed second state signal, and the second discharge module discharges the first voltage at the output end of the reference voltage output module, causing the first voltage to rapidly drop to the second voltage.
Further, the first discharging module includes a current source, one end of the current source is electrically connected to the first switch unit, and the other end of the current source is grounded.
Further, the second discharging module is used for grounding the second switching unit.
Furthermore, the reference voltage output module comprises a capacitor, one end of the capacitor is electrically connected with the switch control module, and the other end of the capacitor is grounded.
Further, the reference voltage generating circuit for IGBT short-circuit protection further comprises a voltage input module, and the voltage input module is electrically connected with the switch control module;
when the state detection module detects that the IGBT is not short-circuited, the state detection module sends a third state signal to the switch control module, the switch control module conducts the electric connection between the voltage input module and the reference voltage output module according to the third state signal, and the voltage input module is used for providing the initial voltage for the reference voltage output module.
Further, the switch control module includes a third switch unit electrically connected between the reference voltage output module and the voltage input module, and the third switch unit is also electrically connected with the state detection module, and is configured to receive the third state signal and conduct the electrical connection between the voltage input module and the reference voltage output module according to the third state signal.
The reference voltage generating circuit for IGBT short-circuit protection detects the short-circuit state of the IGBT through the state detection module so as to send out different detection signals according to the detection result; the switch control module is used for switching on or switching off the electric connection between the first discharging module and the reference voltage output module and the electric connection between the second discharging module and the reference voltage output module according to the detection signal sent by the state detection module, so that the voltage at the output end of the reference voltage output module is discharged at different rates under different states of the IGBT; the detection signal is delayed by controlling the first delay unit and the second delay unit in the switch module, so that the error caused by lack of reaction time and buffering time when the IGBT gate voltage drops along with the reference voltage is avoided. Therefore, the reference voltage suitable for the grid voltage drop rate of the IGBT after short circuit can be formed, and the waveform is ideal, stable and reliable.
Drawings
Fig. 1 is a block diagram of a preferred embodiment of a reference voltage generating circuit for IGBT short-circuit protection according to the present invention.
Fig. 2 is another schematic diagram of a preferred embodiment of the reference voltage generating circuit for IGBT short-circuit protection according to the present invention.
Fig. 3 is a schematic diagram of a gate voltage variation waveform when the IGBT is reliably turned off after short-circuiting.
Fig. 4 is a waveform diagram of a preferred embodiment of the reference voltage generated by the reference voltage generating circuit for IGBT short-circuit protection according to the present invention.
Description of the main elements
Reference voltage generating circuit 100 for IGBT short-circuit protection
Switch control module 10
Reference voltage output module 40
Current source I1
Capacitor C1
The following detailed description of the invention will be further described in conjunction with the above-identified drawings.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, the present invention provides a reference voltage generating circuit 100 for IGBT short-circuit protection, which is used to generate a reference voltage that can make the IGBT gate voltage drop according to the same trend to realize soft turn-off when the IGBT short-circuit occurs.
The reference voltage generating circuit 100 for IGBT short-circuit protection includes a switch control module 10, a first discharging module 20, a second discharging module 30, a reference voltage output module 40, and a state detecting module 50. The switch control module 10 is electrically connected to the first discharging module 20, the second discharging module 30, the reference voltage output module 40, and the state detection module 50, respectively.
The state detection module 60 is configured to detect a short-circuit state of an IGBT (not shown), and send different detection signals to the switch control module 10 according to a detection result. The switch control module 10 is configured to turn on or off the electrical connection between the first discharging module 20 and the second discharging module 30 and the reference voltage output module 50 according to the detection signal sent by the state detection module 50.
When the state detection module 50 detects that the IGBT is short-circuited, the state detection module 50 sends a first state signal to the switch control module 10, the switch control module 10 turns on the electrical connection between the first discharging module 20 and the reference voltage output module 40 according to the first state signal, and the first discharging module 20 performs constant current discharging on the initial voltage at the output end of the reference voltage output module 40, so that the initial voltage is decreased (i.e., linearly decreased) to the first voltage at a constant rate, and thus, the soft turn-off of the IGBT is realized.
In this embodiment, the initial voltage may be 5V, and the first voltage may be 2V. The first voltage is used for the IGBT gate voltage corresponding to 0V, i.e. when the initial voltage is decreased to the first voltage, the IGBT gate voltage will decrease to 0V with the same trend. In this way, the output end of the reference voltage output module 40 provides an ideal reference voltage, so that the gate voltage can slowly drop with reference to the reference voltage waveform after the IGBT is short-circuited, and soft turn-off is realized.
When the state detection module 50 detects that the IGBT is short-circuited and the gate voltage is 0V, that is, the initial voltage is decreased to the first voltage, the state detection module 50 sends a second detection signal to the switch control module 10, the switch control module 10 turns off the electrical connection between the first discharging module 20 and the reference voltage output module 40 according to the second detection signal, and turns on the electrical connection between the second discharging module 30 and the reference voltage output module 40, and the second discharging module 30 discharges the first voltage at the output end of the reference voltage output module 40, so that the first voltage is quickly decreased to the second voltage, so as to achieve quick turn-off of the IGBT after completing the soft turn-off process, thereby decreasing the total turn-off time.
In this embodiment, the second voltage is 0V, and the second voltage is used for an IGBT gate voltage corresponding to-10V. I.e. when the first voltage drops to the second voltage, the IGBT gate voltage will drop from 0V to-10V with the same trend. In this way, the output end of the reference voltage output module 40 will provide a more ideal reference voltage, so that the IGBT completes the whole soft turn-off process with reference to the reference voltage.
Referring to fig. 2, the switch control module 10 includes a first delay unit 11 and a first switch unit 12. The first delay unit 11 is electrically connected between the state detection module 50 and the first switch unit 12. The first switching unit 12 is electrically connected between the reference voltage output module 40 and the first discharging module 20. The first state signal includes a narrow pulse signal and a short circuit signal.
The first switching unit 12 is configured to receive the narrow pulse signal and conduct an electrical connection between the reference voltage output module 40 and the first discharging module 20 according to the narrow pulse signal. The first discharging module 20 performs constant current discharging on the initial voltage at the output terminal of the reference voltage output module 40, so that the initial voltage at the output terminal of the reference voltage output module 40 is decreased to a third voltage at a constant rate. The third voltage is greater than the first voltage. In this embodiment, the third voltage is 4.8V, and the third voltage corresponds to a gate voltage of 14V.
The first delay unit 11 is configured to receive the short-circuit signal, delay the short-circuit signal for a period of time, and transmit the short-circuit signal to the first switch unit 12, where the delay time is longer than a time taken for the initial voltage to drop to the third voltage. The first switch unit 12 is further configured to conduct an electrical connection between the reference voltage output module 40 and the first discharging module 20 according to the delayed short-circuit signal, and the first discharging module 20 performs constant-current discharging on a third voltage at the output end of the reference voltage output module 40, so that the third voltage is reduced to the first voltage at a constant rate.
Because IGBT grid voltage follows the utility model discloses the technique of the reference voltage who produces adopts the form of feedback loop usually, and gets into feedback operating condition and need a reaction time. And the utility model provides a first delay unit 11 is right the delay time of short-circuit signal is greater than initial voltage descends to the time that the third voltage was used, makes the voltage of reference voltage output module 40 output will keep in a period (this time is shorter) the third voltage is unchangeable (please refer to fig. 3 and fig. 4), and this will avoid grid voltage can't normally follow the defect that descends in step effectively to produce more ideal reference voltage in order to be used for realizing the soft turn-off of IGBT.
Further, the switch control module 10 further includes a second delay unit 13 and a second switch unit 14. The second delay unit 13 is electrically connected between the state detection module 50 and the second switch unit 14. The second switching unit 14 is electrically connected between the reference voltage output module 40 and the second discharging module 30. The first switching unit 12 receives the second state signal and cuts off the electrical connection between the reference voltage output module 40 and the first discharging module 20 according to the second state signal. The second delay unit 13 receives the second status signal, delays the second status signal for a period of time, and transmits the delayed second status signal to the second switch unit 14. The second switching unit 14 is configured to electrically connect the reference voltage output module 40 and the second discharging module 30 according to the delayed second state signal. The second discharging module 30 discharges the first voltage at the output end of the reference voltage output module 40, so that the first voltage rapidly drops to the second voltage.
Since the second delay unit 13 delays the second state signal for a period of time and then transmits the second state signal to the second switch unit 14, when the voltage at the output end of the reference voltage output module 40 drops to the first voltage, the first voltage is maintained for a period of time and then the second voltage drops to the second voltage under the control of the second switch unit 14, which provides a buffer stage for the IGBT to enter the hard turn-off process from the soft turn-off process, thereby preventing the error caused by the gate voltage following drop due to the interference signal, so that the generated reference voltage is more ideal and is more reliably used for realizing the turn-off process of the IGBT.
Further, the reference voltage generating circuit 100 for IGBT short-circuit protection further includes a voltage input module 60. The voltage input module 60 is electrically connected to the switch control module 10.
When the state detection module 50 detects that the IGBT does not short (i.e., operates normally), the state detection module 50 sends a third state signal to the switch control module 10, and the switch control module 10 turns on the electrical connection between the voltage input module 60 and the reference voltage output module 40 according to the third state signal. In this case, the first and second discharge modules 20 and 30 and the reference voltage output module 40 are all in the off state. The voltage input module 60 is used for providing the initial voltage at the output end of the reference voltage output module 40 for the reference voltage output module 40.
Further, the switch control module 10 may further include a third switching unit 15. The third switching unit 15 is electrically connected between the reference voltage output module 40 and the voltage input module 60. The third switching unit 15 is further electrically connected to the state detection module 50, and is configured to receive the third state signal and to turn on the electrical connection between the voltage input module 60 and the reference voltage output module 40 according to the third state signal.
In the present embodiment, the first discharging module 20 includes a current source I1. One end of the current source I1 is electrically connected to the first switch unit 12, and the other end of the current source I1 is grounded. The current source I1 is used to ensure that the first discharging module 20 discharges at a constant current, so as to ensure that the voltage value at the output terminal of the reference voltage output module 40 decreases at a constant rate when the voltage is discharged through the first discharging module 20.
In the present embodiment, the second discharging module 30 is grounded and directly grounds the second switching unit 14.
In the present embodiment, the reference voltage output module 40 includes a capacitor C1, one end of the capacitor C1 is electrically connected to the first switch unit 12 and the second switch unit 14 in the switch control module 10, and the other end of the capacitor is grounded.
The reference voltage generating circuit for IGBT short-circuit protection detects the short-circuit state of the IGBT through the state detection module 50 to send out different detection signals according to the detection result; the switch control module 10 turns on or off the electrical connection between the first discharging module 20 and the second discharging module 30 and the reference voltage output module 40 according to the detection signal sent by the state detection module 50, so that the voltage at the output end of the reference voltage output module 40 is discharged at different rates in different states of the IGBT; the detection signal is also delayed by controlling the first delay unit 11 and the second delay unit 12 in the switch module 10, so as to avoid the IGBT gate voltage from being in error due to lack of reaction time and buffering time when the IGBT gate voltage follows the reference voltage drop. Therefore, the reference voltage suitable for the grid voltage drop rate of the IGBT after short circuit can be formed, and the waveform is ideal, stable and reliable.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. A reference voltage generating circuit for IGBT short-circuit protection is used for generating a reference voltage for IGBT short-circuit protection when the IGBT is short-circuited, a reference voltage is generated that allows the gate voltage to fall in the same direction to achieve soft turn-off, it is characterized in that the reference voltage generating circuit for IGBT short-circuit protection comprises a switch control module, a first discharging module, a second discharging module, a reference voltage output module and a state detection module, the switch control module is respectively and electrically connected with the first discharging module, the second discharging module, the reference voltage output module and the state detection module, the state detection module is used for detecting the short-circuit state of the IGBT, different detection signals are sent to the switch control module according to the detection result, and the switch control module is used for switching on or switching off the electric connection between the first discharging module and the reference voltage output module and the electric connection between the second discharging module and the reference voltage output module according to the detection signals;
when the state detection module detects that the IGBT is short-circuited, the state detection module sends a first state signal to the switch control module, the switch control module conducts the electric connection between the first discharging module and the reference voltage output module according to the first state signal, the first discharging module discharges the initial voltage at the output end of the reference voltage output module, so that the initial voltage at the output end of the reference voltage output module is reduced to a first voltage at a constant rate, and the first voltage is used for corresponding to the gate voltage of the IGBT of 0V;
when the state detection module detects that the IGBT is short-circuited and the grid voltage of the IGBT is 0V, the state detection module sends a second state signal to the switch control module, the switch control module conducts the electric connection between the second discharging module and the reference voltage output module according to the second state signal and turns off the electric connection between the first discharging module and the reference voltage output module, and the second discharging module discharges the first voltage at the output end of the reference voltage output module, so that the first voltage is quickly reduced to the second voltage.
2. The reference voltage generating circuit for IGBT short-circuit protection according to claim 1, wherein the switch control module includes a first delay unit and a first switch unit, the first delay unit is electrically connected between the state detection module and the first switch unit, the first switch unit is electrically connected between the reference voltage output module and the first discharging module, the first state signal includes a narrow pulse signal and a short-circuit signal, the first switch unit is configured to receive the narrow pulse signal and conduct an electrical connection between the reference voltage output module and the first discharging module according to the narrow pulse signal, the first discharging module performs constant current discharge on the initial voltage at the output end of the reference voltage output module, so that the initial voltage at the output end of the reference voltage output module drops to a third voltage at a constant rate, the third voltage is greater than the first voltage, the first delay unit is used for receiving the short-circuit signal, delaying the short-circuit signal and transmitting the short-circuit signal to the first switch unit, the delay time is greater than the time for the initial voltage to be reduced to the third voltage, the first switch unit is further used for conducting electric connection between the reference voltage output module and the first discharge module according to the delayed short-circuit signal, and the first discharge module continues to perform constant-current discharge on the third voltage at the output end of the reference voltage output module, so that the third voltage is reduced to the first voltage at a constant rate.
3. The reference voltage generating circuit for IGBT short-circuit protection according to claim 2, wherein the switch control module further includes a second delay unit and a second switch unit, the second delay unit is electrically connected between the state detection module and the second switch unit, the second switch unit is electrically connected between the reference voltage output module and the second discharging module, the first switch unit receives the second state signal and cuts off the electrical connection between the reference voltage output module and the first discharging module according to the second state signal, the second delay unit receives the second state signal and transmits the second state signal to the second switch unit after delaying the second state signal for a period of time, and the second switch unit is configured to turn on the electrical connection between the reference voltage output module and the second discharging module according to the delayed second state signal, the second discharging module discharges the first voltage at the output end of the reference voltage output module, so that the first voltage is rapidly reduced to the second voltage.
4. The reference voltage generation circuit for IGBT short-circuit protection according to claim 2, wherein the first discharging module includes a current source having one end electrically connected to the first switching unit and the other end grounded.
5. The reference voltage generation circuit for IGBT short-circuit protection according to claim 3, wherein the second discharging module is configured to ground the second switching unit.
6. The reference voltage generation circuit for IGBT short-circuit protection according to claim 1, wherein the reference voltage output module includes a capacitor, one end of the capacitor is electrically connected to the switch control module, and the other end of the capacitor is grounded.
7. The reference voltage generation circuit for IGBT short-circuit protection according to claim 1, further comprising a voltage input module electrically connected to the switch control module;
when the state detection module detects that the IGBT is not short-circuited, the state detection module sends a third state signal to the switch control module, the switch control module conducts the electric connection between the voltage input module and the reference voltage output module according to the third state signal, and the voltage input module is used for providing the initial voltage for the reference voltage output module.
8. The reference voltage generating circuit for IGBT short-circuit protection according to claim 7, wherein the switch control module includes a third switching unit electrically connected between the reference voltage output module and the voltage input module, and the third switching unit is further electrically connected to the state detection module, and configured to receive the third state signal and conduct electrical connection between the voltage input module and the reference voltage output module according to the third state signal.
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| CN202021513979.XU CN212784755U (en) | 2020-07-27 | 2020-07-27 | Reference voltage generating circuit for IGBT short-circuit protection |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111864701A (en) * | 2020-07-27 | 2020-10-30 | 深圳青铜剑技术有限公司 | Reference voltage generating circuit and method for IGBT short-circuit protection |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111864701A (en) * | 2020-07-27 | 2020-10-30 | 深圳青铜剑技术有限公司 | Reference voltage generating circuit and method for IGBT short-circuit protection |
| CN111864701B (en) * | 2020-07-27 | 2023-03-21 | 深圳青铜剑技术有限公司 | Reference voltage generating circuit and method for IGBT short-circuit protection |
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