CN211293079U - Multi-station hard cutting measuring circuit for dynamic resistance of gallium nitride power tube - Google Patents
Multi-station hard cutting measuring circuit for dynamic resistance of gallium nitride power tube Download PDFInfo
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- CN211293079U CN211293079U CN201922031219.9U CN201922031219U CN211293079U CN 211293079 U CN211293079 U CN 211293079U CN 201922031219 U CN201922031219 U CN 201922031219U CN 211293079 U CN211293079 U CN 211293079U
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Abstract
The utility model provides a measuring circuit is cut firmly to multistation of gallium nitride power tube dynamic resistance, include: a plurality of measurement sub-circuits connected in parallel to two ends of the high voltage source, each measurement sub-circuit correspondingly measuring a dynamic resistance of a gallium nitride power tube, the measurement sub-circuit comprising: the main circuit is connected between the drain electrode and the source electrode of the tested gallium nitride power tube and comprises a current sampling circuit and a high-voltage capacitor which are connected in series; a high-speed drive circuit for providing drive voltage to the grid electrode of the gallium nitride power tube to be tested; a voltage sampling circuit; the synchronous program control circuit provides a synchronous control signal with a set time sequence for the high-speed drive circuit; and the charging circuit is connected to two ends of the high-voltage capacitor, the high-voltage source charges the high-voltage capacitor through the charging circuit, and the charging circuit is also connected with an isolation circuit in series. The utility model discloses support the multistation and measure, and respectively measure the mutual interference problem between the sub-circuit when having avoided the multistation measurement.
Description
Technical Field
The utility model relates to an integrated circuit measures technical field, in particular to measurement circuit is cut firmly to multistation of gallium nitride power tube dynamic resistance.
Background
Gallium nitride (GaN) is a new semiconductor material, which has the characteristics of large forbidden band width, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength, high hardness and the like, is widely applied to new energy vehicles, rail transit, smart grids, semiconductor illumination and new-generation mobile communication in the early stage, and is known as a third-generation semiconductor material. With the control of the breakthrough cost, gallium nitride is widely used in consumer electronics and other fields, and a charger is one of them. As the demand for gallium nitride increases and more applications become more and more important, the measurement of gallium nitride becomes more and more important, and the measurement of gallium nitride is divided into two categories, static parameter and dynamic parameter.
The static parameters mainly refer to the intrinsic relevant parameters which are irrelevant to the working conditions, and mainly comprise: the measurement of gate level turn-on voltage, gate level breakdown voltage, collector-emitter withstand voltage, inter-collector-emitter leakage current, parasitic capacitance (input capacitance, transfer capacitance, output capacitance), and the associated characteristic curves of the above parameters.
The dynamic parameter mainly refers to the dynamic on-resistance of the gallium nitride power tube under the dynamic working condition, because the trap in the gallium nitride power tube structure and the long length of the depletion region need to be designed for adapting to the high-voltage breakdown voltage, thus, when the device is turned on immediately after the high voltage blocking state, substantial channel electrons are trapped, therefore, the power tube does not participate in conduction, which results in that the gallium nitride power tube has higher on-resistance under the dynamic working condition than under the static state, the dynamic on-resistance, i.e. the dynamic resistance, is of great significance for studying the operating characteristics of the gan power tube, however in the prior art, there is no simple and effective measuring circuit to measure the dynamic resistance of the gan power tube to reflect the characteristics of the gan power tube under dynamic operating conditions, therefore, it is necessary to design a measuring circuit to effectively measure the dynamic resistance of the gan power tube.
SUMMERY OF THE UTILITY MODEL
In view of this, the main objective of the present invention is to provide a measuring circuit is cut firmly to multistation of gallium nitride power tube dynamic resistance, can carry out high-pressure switch fast through designing one kind, and support the synchronous programme-controlled measuring circuit is cut firmly of a plurality of chronogenesis, can effectively measure the dynamic resistance of gallium nitride power tube under the dynamic behavior, support the multistation to measure simultaneously, and each mutual interference problem between the measuring sub-circuit when having avoided the multistation to measure.
The utility model discloses a technical scheme do, a measuring circuit is cut firmly to multistation of gallium nitride power tube dynamic resistance, include:
a plurality of measurement sub-circuits connected in parallel to two ends of the high voltage source, each measurement sub-circuit correspondingly measuring a dynamic resistance of a gallium nitride power tube, the measurement sub-circuit comprising:
the main circuit is connected between the drain electrode and the source electrode of the tested gallium nitride power tube and comprises a current sampling circuit and a high-voltage capacitor which are connected in series, and the high-voltage capacitor is used for providing instantaneous high voltage between the drain electrode and the source electrode of the tested gallium nitride power tube through the main circuit;
a high-speed drive circuit for providing drive voltage to the grid electrode of the gallium nitride power tube to be tested;
the synchronous program control circuit provides a synchronous control signal with a set time sequence for the high-speed driving circuit and controls the driving voltage to be synchronously switched on and off according to the time sequence;
a voltage sampling circuit connected in parallel to the drain and source of the GaN power tube to be tested
The high-voltage source charges the high-voltage capacitor through the charging circuit, and the isolating circuit is connected in series on the charging circuit and used for isolating the high-voltage capacitor and preventing the measuring sub-circuits from interfering with each other.
From the above, the utility model connects a plurality of measuring sub-circuits in parallel, each measuring sub-circuit measures the dynamic resistance of a measured GaN power tube correspondingly, and outputs a synchronous control signal with a set time sequence for each measuring sub-circuit through the synchronous program control circuit, so as to control the plurality of measuring sub-circuits to be conducted or disconnected according to a set time sequence, and each measuring sub-circuit respectively measures the voltage value and the current value of the GaN power tube under each time sequence, thereby calculating the resistance value corresponding to each time sequence, the utility model supports the synchronization of control signals and the processing function of hardware data, realizes the rapid high-voltage switching measurement of the gallium nitride power tube through a high-voltage capacitor, meanwhile, an isolation circuit is connected in series with the charging circuit of each high-voltage capacitor, so that the high-voltage capacitors are isolated, and the mutual interference of a plurality of measuring sub-circuits is prevented.
Preferably, the isolation circuit includes:
a unidirectional diode.
Therefore, the unidirectional diode can ensure unidirectional current transmission on the charging circuit and prevent current backflow from generating interference on other measuring sub-circuits.
Preferably, the isolation circuit includes:
a resistor and a switch module connected in series;
and the voltmeter is connected in parallel to two ends of the resistor.
By last, can adopt the electric current sampling resistance to sample charging circuit's electric current, the voltmeter is used for monitoring the voltage at this resistance both ends to realize the electric current monitoring to charging circuit, whether take place unusually in order to judge, when judging unusually, accessible disconnection switch module keeps apart this measurement subcircuit.
Preferably, the voltage sampling circuit includes:
a voltmeter and a high-voltage clamping circuit which are connected in series.
By last, this voltage sampling circuit accessible high accuracy voltmeter gathers the voltage at gallium nitride power tube both ends in real time, and high-voltage clamp circuit can be used to protect this high accuracy voltmeter, and when the gallium nitride power tube turn-off, the high pressure of drain end can be carried out the clamp by this high-voltage clamp circuit, guarantees that high accuracy voltmeter can not damaged by the high pressure.
Preferably, the current sampling circuit includes:
the current sampling resistor is connected in series with the main circuit, and the voltmeter is connected in parallel with two ends of the current sampling resistor.
Therefore, a current sampling resistor with known resistance is connected in series with the main circuit, and the voltage at two ends of the current sampling resistor is measured by a high-precision voltmeter, so that the current value on the main circuit, namely the current value of the gallium nitride power tube, is calculated.
Preferably, the circuit further comprises a current regulating circuit connected in series with the main circuit, and the current regulating circuit comprises: and the adjustable resistor is connected in series with the main circuit.
Therefore, different current values in the measuring sub-circuit can be set by adjusting the resistance value of the adjustable resistor.
Drawings
Fig. 1 is a schematic circuit diagram of a multi-station hard-cutting measuring circuit for the dynamic resistance of the gallium nitride power tube according to the present invention;
fig. 2 is a schematic circuit diagram of an isolation circuit according to an embodiment of the present invention;
fig. 3 is a schematic circuit diagram of an isolation circuit according to another embodiment of the present invention;
FIG. 4 is a schematic diagram of waveforms of circuit portions under the time sequence setting of the present invention;
fig. 5 is a schematic diagram of a dynamic resistance characteristic curve of the gan power tube according to the present invention.
Detailed Description
The following describes in detail a multi-station hard-cutting measurement circuit for measuring dynamic resistance of a gan power tube according to the present invention with reference to fig. 1 to 5.
Fig. 1 shows a schematic circuit diagram of a multi-station hard cutting measurement circuit for a dynamic resistance of a gan power tube of the present invention, the multi-station hard cutting measurement circuit includes a high voltage source VI1 and a plurality of measurement sub-circuits SITE1-SITEx connected in parallel at two ends of the high voltage source VI1, each measurement sub-circuit corresponds to a dynamic circuit for measuring a gan power tube, and the measurement sub-circuits do not interfere with each other;
taking the measurement sub-circuit of SITE1 as an example, the measurement sub-circuit includes:
the high-voltage capacitor C1 is connected in parallel with the drain (D) and the source (S) of the measured gallium nitride power tube and can be used for providing instantaneous high voltage between the drain (D) and the source (S) of the measured gallium nitride power tube;
the current sampling circuit is connected in series with a source (S) of the tested gallium nitride power tube and comprises a current sampling resistor R2_1 and a voltmeter V2_1 which are connected in parallel, the high-precision voltmeter V2_1 is used for acquiring the voltage value of the current sampling resistor R2_1 corresponding to each time sequence in real time, and the current value flowing through the gallium nitride power tube corresponding to each time sequence can be calculated according to the resistance value (such as 0.2 ohm) of the circuit sampling resistor R2_ 1;
the voltage sampling circuit is connected in parallel with a drain electrode (D) and a source electrode (S) of the measured gallium nitride, the voltage sampling circuit comprises a high-precision voltmeter V1_1 and a high-voltage clamping circuit which are connected in series, the high-precision voltmeter V1_1 is used for collecting voltage values of the gallium nitride power tube corresponding to each time sequence in real time, the high-voltage clamping circuit can be realized through an Attenuator attentuator, the circuit mainly plays a role in high-voltage clamping protection, and when the gallium nitride power tube is disconnected, the voltage at the drain end of the gallium nitride power tube is clamped so as to protect the high-precision voltmeter V1_1 from being damaged by high voltage;
the high-speed driving circuit is used for providing driving voltage for the tested gallium nitride power tube to drive the tested gallium nitride power tube to be switched on or switched off, the output end of the high-speed driving circuit is respectively connected with a grid (G) and a source (S) of the tested gallium nitride power tube, the high-speed driving circuit comprises a Driver, the Driver receives a synchronous control signal CTRL0_1 provided by a synchronous program control circuit, and outputs a high-speed driving signal, namely the driving voltage, to the tested gallium nitride power tube under the control of the synchronous control signal CTRL0_1 so as to control the tested gallium nitride power tube to be switched on or switched off;
the synchronous program control circuit (not shown in the figure) can be realized by adopting a programmable FPGA chip, and the synchronous program control circuit respectively provides synchronous control signals under a set time sequence for the high-speed drive circuit of each quantum measurement circuit through programming control so as to control the high-speed drive circuit to output high-speed drive signals, namely drive voltage, to the gallium nitride power tube to be measured so as to control the conduction or the disconnection of the gallium nitride power tube to be measured;
the adjustable resistor R1_1 is connected in series between the positive output end of the high-voltage capacitor C1 and the drain (D) of the gallium nitride power tube, the adjusting range of the adjustable resistor R1_1 is 1000 ohms, and the control of the current flowing through the measuring sub-circuit can be realized by adjusting the resistance value of the adjustable resistor R1_1 so as to realize the setting of different current values in the measuring sub-circuit;
the two ends of the high-voltage capacitor C1 are also connected with a charging circuit, a high-voltage source VI1 charges the high-voltage capacitor C1 through the charging circuit, and the high-voltage source VI1 supports the output function of multiple channels and different voltage values and can charge the high-voltage capacitors of each measuring sub-circuit; an isolation circuit is also connected in series on the charging circuit between the positive output end of the high-voltage source and the positive output end of the high-voltage capacitor C1, and mutual interference among the measuring sub-circuits can be prevented. For example, when the drain and the source of the gan power tube to be measured on any of the measurement sub-circuits are short-circuited, the high-voltage capacitor on the measurement sub-circuit continuously discharges between the short-circuited drain and source, and cannot maintain a preset voltage, and the presence of the isolation circuit can prevent the short-circuited measurement sub-circuit from interfering with other normally-operating measurement sub-circuits, thereby affecting the measurement result.
As shown in fig. 2, in an embodiment of the present invention, the isolation circuit can be implemented by using a unidirectional diode D1, and the unidirectional diode D1 can ensure the unidirectional transmission of the circuit on the charging circuit by being connected in series between the positive output terminal of the high voltage source VI1 and the positive output terminal of the high voltage capacitor, effectively isolate the high voltage capacitor on each measuring sub-circuit, and prevent the mutual interference between the high voltage capacitors.
As shown in fig. 3, in another embodiment of the present invention, the isolation circuit includes a current sampling resistor R3 and a switch module K1 connected in series, and a voltmeter V is further connected in parallel to two ends of the resistor R3;
in a normal working state, the switch module K1 on the isolation circuit is in a closed state, and the high-voltage source VI1 outputs a set constant voltage value Vset;
when the voltage value output by the high-voltage source VI1 changes, it is determined that one or more measurement sub-circuits connected in parallel with two ends of the high-voltage source are abnormal, at this time, the value of a voltmeter V in each isolation circuit is detected, and the current value on the charging circuit in each measurement sub-circuit can be calculated according to the resistance value of the resistor R3, if the current value tends to be stable, it is determined that the measurement sub-circuit is abnormal, so that the high-voltage source VI1 continuously charges the high-voltage capacitor, at this time, the switch module K1 on the measurement sub-circuit can be disconnected, and the measurement sub-circuit is isolated, so as to prevent the measurement sub-circuit from influencing the measurement accuracy of other measurement sub-circuits.
Fig. 4 is a schematic waveform diagram of each circuit part in a set timing outputted by the synchronous program control circuit, in which, in the set timing, the synchronous program control circuit outputs the synchronous control signal CTRL0_1 for X times to the high-speed driving circuit to control the high-speed driving circuit to turn on or off, the on duration of the synchronous control signal CTRL0_1 is 20us, and the interval time between the synchronous control signals for controlling the high-speed driving circuit to turn on is t (the time of t can be set according to actual measurement requirements, and can be generally set to 100 ms);
when the high-speed driving circuit, namely the Driver receives the synchronous control signal CTRL0_1, the Driver is turned on and outputs a high-speed driving signal, and the Driver outputs high-speed driving signals to the gate (G) and the source (S) of the gan power tube to be tested, namely the driving voltage is 5V; when the tested gallium nitride power tube is not conducted, the voltage applied between the source (S) and the drain (D) of the tested gallium nitride power tube by the high-voltage capacitor C1 is 400V, when the grid (G) and the drain (D) of the gallium nitride power tube are driven by the driving voltage to be conducted, the high-voltage capacitor C1 starts to discharge, and the voltage of 400V between the source (S) and the drain (D) of the gallium nitride power tube is instantly pulled down; the waveform of the adjustable resistor R1_1 corresponds to the timing of the driving voltage, and a preset current value IC can be determined by adjusting the adjustable resistor R1_1, for example, when R1_1 is 100 ohms, the current value IC can be preset to 4A according to 400V voltage, and the current value IC will be changed according to the corresponding waveform corresponding to the turn-on or turn-off of the quantum circuit under the set timing.
The voltage sampling circuit and the current sampling circuit synchronously measure a voltage value and a current value within the duration time of each conduction under the set time sequence, and the voltage value and the current value measured during each conduction are used for calculation, so that the resistance value of the gallium nitride power tube to be measured during each conduction can be calculated, and the dynamic resistance parameter of the gallium nitride power tube to be measured is obtained;
judging whether the tested gallium nitride power tube is normal or not according to whether the characteristic curve corresponding to the parameter of the dynamic resistor is in accordance with the corresponding characteristic curve of the normal gallium nitride power tube or not;
fig. 5 is a schematic diagram of a dynamic resistance characteristic curve of a gan power tube under test in a certain measurement sub-circuit, where RON0, RON1, and RON2 … are the measurement results of the resistance RON of the gan power tube when turned on corresponding to each time sequence, RON X is the measurement result of the resistance RON of the last time sequence, and by integrating the resistance RON measured X times, a characteristic curve corresponding to the parameters of the dynamic resistance shown in fig. 5 can be generated, and according to the characteristics of the gan material, when the gan power tube in a normal working state is turned on at a high voltage, the characteristic curve of the dynamic resistance should continuously rise for a period of time and gradually fall and tend to be gentle after rising to a peak value, so that according to the dynamic resistance characteristic curve generated by the test method, it can be determined whether the gan power tube meets the characteristics thereof, and if so, it is determined to be normal, if not, judging that the test card is abnormal;
as can be seen from the variation curve of fig. 5, at the time T2, the resistance RON of the gallium nitride power tube in the on state reaches the peak value, and then the times T3, T4, and T5 gradually decrease and become gentle, which indicates that the performance of the gallium nitride power tube reaches the steady state after multiple high-voltage conduction, and the variation range of the resistance gradually decreases, and the measurement result shows that:
RON0<RON1<RON2；
RON5<RON4<RON3<RON2；
the difference value between two adjacent RON4, RON5, … … and RONx is smaller than a set value, in this embodiment, the set value is only a floating condition representing two adjacent measurement results, and a specific value of the set value can be limited according to the requirement on precision;
according to the measurement result, the performance of the GaN power tube can be judged to be in accordance with the characteristics thereof, and the GaN power tube is judged to be in a normal state.
The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A multistation hard cutting measuring circuit of dynamic resistance of a gallium nitride power tube is characterized by comprising:
a plurality of measurement sub-circuits connected in parallel to two ends of the high voltage source, each measurement sub-circuit correspondingly measuring a dynamic resistance of a gallium nitride power tube, the measurement sub-circuit comprising:
the main circuit is connected between the drain electrode and the source electrode of the tested gallium nitride power tube and comprises a current sampling circuit and a high-voltage capacitor which are connected in series, and the high-voltage capacitor is used for providing instantaneous high voltage between the drain electrode and the source electrode of the tested gallium nitride power tube through the main circuit;
a high-speed drive circuit for providing drive voltage to the grid electrode of the gallium nitride power tube to be tested;
the voltage sampling circuit is connected in parallel with the two ends of the drain electrode and the source electrode of the tested gallium nitride power tube;
the synchronous program control circuit provides a synchronous control signal with a set time sequence for the high-speed driving circuit and controls the driving voltage to be synchronously switched on and off according to the time sequence;
the high-voltage source charges the high-voltage capacitor through the charging circuit, and the isolating circuit is connected in series on the charging circuit and used for isolating the high-voltage capacitor and preventing the measuring sub-circuits from interfering with each other.
2. The circuit of claim 1, wherein the isolation circuit comprises:
a unidirectional diode.
3. The circuit of claim 1, wherein the isolation circuit comprises:
a resistor and a switch module connected in series;
and the voltmeter is connected in parallel to two ends of the resistor.
4. The circuit of claim 1, wherein the voltage sampling circuit comprises:
a voltmeter and a high-voltage clamping circuit which are connected in series.
5. The circuit of claim 1, wherein the current sampling circuit comprises:
the current sampling resistor is connected in series with the main circuit, and the voltmeter is connected in parallel with two ends of the current sampling resistor.
6. The circuit of claim 1, further comprising a current regulation circuit connected in series with the main circuit, comprising: and the adjustable resistor is connected in series with the main circuit.
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| CN201922031219.9U CN211293079U (en) | 2019-11-20 | 2019-11-20 | Multi-station hard cutting measuring circuit for dynamic resistance of gallium nitride power tube |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118330378A (en) * | 2024-06-14 | 2024-07-12 | 浙江杭可仪器有限公司 | Capacitor service life testing system with pre-charging circuit and detection method thereof |
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2019
- 2019-11-20 CN CN201922031219.9U patent/CN211293079U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118330378A (en) * | 2024-06-14 | 2024-07-12 | 浙江杭可仪器有限公司 | Capacitor service life testing system with pre-charging circuit and detection method thereof |
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