CN110794281A - Hard cutting measuring circuit and method for dynamic resistance of gallium nitride power tube - Google Patents
Hard cutting measuring circuit and method for dynamic resistance of gallium nitride power tube Download PDFInfo
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- CN110794281A CN110794281A CN201911143046.8A CN201911143046A CN110794281A CN 110794281 A CN110794281 A CN 110794281A CN 201911143046 A CN201911143046 A CN 201911143046A CN 110794281 A CN110794281 A CN 110794281A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
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Abstract
The invention provides a hard cutting measuring circuit and a hard cutting measuring method for a dynamic resistance of a gallium nitride power tube, wherein the hard cutting measuring circuit comprises the following steps: the high-voltage output circuit is used for providing instantaneous high voltage between the drain electrode and the source electrode of the gallium nitride power tube through the main circuit; a high-speed drive circuit for providing drive voltage to the grid electrode of the gallium nitride power tube to be tested; the synchronous program control circuit is used for respectively providing synchronous control signals with set time sequences for the high-speed drive circuit and the high-voltage output circuit and controlling the drive voltage and the instantaneous high voltage to be synchronously supplied and disconnected according to the time sequences; and the voltage sampling circuit is connected in parallel with the two ends of the drain electrode and the source electrode of the tested gallium nitride power tube. The invention can realize fast high-voltage switching, support synchronous control at a plurality of moments and effectively measure the dynamic resistance of the gallium nitride power tube under the dynamic working condition.
Description
Technical Field
The invention relates to the technical field of integrated circuit measurement, in particular to a hard cutting measurement circuit and a hard cutting measurement method for a dynamic resistance of a gallium nitride power tube.
Background
Gallium nitride (GaN) is a new semiconductor material, which has the characteristics of large forbidden band width, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength, high hardness and the like, is widely applied to new energy vehicles, rail transit, smart grids, semiconductor illumination and new-generation mobile communication in the early stage, and is known as a third-generation semiconductor material. With the control of the breakthrough cost, gallium nitride is widely used in consumer electronics and other fields, and a charger is one of them. As the demand for gallium nitride increases and more applications become more and more important, the measurement of gallium nitride becomes more and more important, and the measurement of gallium nitride is divided into two categories, static parameter and dynamic parameter.
The static parameters mainly refer to the intrinsic relevant parameters which are irrelevant to the working conditions, and mainly comprise: the measurement of gate level turn-on voltage, gate level breakdown voltage, collector-emitter withstand voltage, inter-collector-emitter leakage current, parasitic capacitance (input capacitance, transfer capacitance, output capacitance), and the associated characteristic curves of the above parameters.
The dynamic parameter mainly refers to the dynamic on-resistance of the gallium nitride power tube under the dynamic working condition, because the trap in the gallium nitride power tube structure and the long length of the depletion region need to be designed for adapting to the high-voltage breakdown voltage, thus, when the device is turned on immediately after the high voltage blocking state, substantial channel electrons are trapped, therefore, the power tube does not participate in conduction, which results in that the gallium nitride power tube has higher on-resistance under the dynamic working condition than under the static state, the dynamic on-resistance, i.e. the dynamic resistance, is of great significance for studying the operating characteristics of the gan power tube, however in the prior art, there is no simple and effective measuring circuit to measure the dynamic resistance of the gan power tube to reflect the characteristics of the gan power tube under dynamic operating conditions, therefore, it is necessary to design a measuring circuit to effectively measure the dynamic resistance of the gan power tube.
Disclosure of Invention
In view of the above, the main objective of the present invention is to provide a hard-switching measurement circuit and a measurement method for a dynamic resistance of a gan power transistor, which can effectively measure the dynamic resistance of the gan power transistor under dynamic working conditions by designing a hard-switching measurement circuit capable of performing high-voltage switching quickly and supporting multiple timing synchronization program controls.
The invention adopts the technical scheme that a hard cutting measuring circuit of a dynamic resistance of a gallium nitride power tube comprises:
the high-voltage output circuit is used for providing instantaneous high voltage between the drain electrode and the source electrode of the gallium nitride power tube through the main circuit;
a high-speed drive circuit for providing drive voltage to the grid electrode of the gallium nitride power tube to be tested;
the synchronous program control circuit is used for respectively providing synchronous control signals with set time sequences for the high-speed drive circuit and the high-voltage output circuit and controlling the drive voltage and the instantaneous high voltage to be synchronously supplied and disconnected according to the time sequences;
and the voltage sampling circuit is connected in parallel with the two ends of the drain electrode and the source electrode of the tested gallium nitride power tube.
The invention outputs the synchronous control signal of the set time sequence through the synchronous program control circuit to control the hard cutting measuring circuit to be conducted in sequence according to the set time sequence and measure the voltage value and the current value of the gallium nitride power tube under each time sequence, thereby calculating the resistance value corresponding to each time sequence.
Preferably, the high voltage output circuit includes:
the capacitor and the switch module are connected in series and are connected in parallel with a high-voltage source at two ends of the capacitor;
the switch module receives the synchronous control signal provided by the synchronous program control circuit to conduct or cut off.
Therefore, the switch module can control the on or off of the high-voltage output circuit under the control of the synchronous program control circuit, when the switch module is in an off state, the capacitor is charged by the high-voltage source, and when the switch module is in an on state, the capacitor realizes instantaneous high-voltage output to provide instantaneous high voltage for the measuring circuit.
Preferably, the voltage sampling circuit includes:
a voltmeter and a high-voltage clamping circuit which are connected in series.
By last, this voltage sampling circuit accessible high accuracy voltmeter gathers the voltage at gallium nitride power tube both ends in real time, and high-voltage clamp circuit can be used to protect this high accuracy voltmeter, and when the gallium nitride power tube turn-off, the high pressure of drain end can be carried out the clamp by this high-voltage clamp circuit, guarantees that high accuracy voltmeter can not damaged by the high pressure.
Preferably, the current sampling circuit includes:
the current sampling resistor is connected in series with the main circuit, and the voltmeter is connected in parallel with two ends of the current sampling resistor.
Therefore, a current sampling resistor with known resistance is connected in series with the main circuit, and the voltage at two ends of the current sampling resistor is measured by a high-precision voltmeter, so that the current value on the main circuit, namely the current value of the gallium nitride power tube, is calculated.
Preferably, the circuit further comprises a current regulating circuit connected in series with the main circuit, and the current regulating circuit comprises: and the adjustable resistor is connected in series with the main circuit.
Therefore, different current values in the hard cutting measuring circuit can be set by adjusting the resistance value of the adjustable resistor.
Based on the hard cutting measuring circuit of the dynamic resistance of the gallium nitride power tube, the invention also provides a measuring method of the dynamic resistance of the gallium nitride power tube, which comprises the following steps:
A. synchronous control signals with set time sequences are respectively provided for a high-speed drive circuit and a high-voltage output circuit through a synchronous program control circuit, and the drive voltage provided by the high-speed drive circuit to the grid electrode of the gallium nitride power tube to be tested and the instantaneous high voltage provided by the high-voltage output circuit between the drain electrode and the source electrode of the gallium nitride power tube are controlled to be synchronously supplied and disconnected according to the time sequences;
B. obtaining current values and voltage values corresponding to each time sequence through a current sampling circuit and a voltage sampling circuit;
C. and calculating corresponding resistance values according to the current values and the voltage values corresponding to the time sequences to obtain parameters of the dynamic resistance of the measured gallium nitride power tube.
According to the measurement method, synchronous connection and disconnection of the high-speed drive circuit and the high-voltage output circuit are achieved through the synchronous control signals provided by the synchronous program control circuit, the voltage value and the current value of the gallium nitride power tube are synchronously measured under the set time sequence, and the resistance value under each time sequence can be calculated by using the measured voltage value and current value according to the ohm law so as to obtain the parameters of the dynamic resistance of the measured gallium nitride power tube.
Preferably, step C is followed by:
and judging whether the tested gallium nitride power tube is normal or not according to whether the characteristic curve corresponding to the parameter of the dynamic resistor is in accordance with the corresponding characteristic curve of the normal gallium nitride power tube or not.
Therefore, according to the characteristics of the gallium nitride material, when the normal gallium nitride power tube is conducted at a high voltage, the characteristic curve corresponding to the parameters of the dynamic resistance of the normal gallium nitride power tube should continuously rise within a period of time, and gradually fall and tend to be gentle after rising to a peak value, so that whether the gallium nitride power tube meets the characteristics of the gallium nitride power tube or not can be judged according to the characteristic curve of the dynamic resistance generated by the testing method.
Drawings
FIG. 1 is a schematic block diagram of a hard-switching measurement circuit for the dynamic resistance of a GaN power transistor according to the present invention;
FIG. 2 is a schematic circuit diagram of a hard-switching measurement circuit for the dynamic resistance of a GaN power transistor according to the present invention;
FIG. 3 is a flow chart of a method for measuring the dynamic resistance of a GaN power tube according to the present invention;
FIG. 4 is a waveform diagram of each circuit portion under the set timing of the present invention;
FIG. 5 is a diagram illustrating the dynamic resistance characteristic curve of the GaN power transistor according to the present invention.
Detailed Description
The following describes a specific embodiment of the hard-cut measuring circuit for the dynamic resistance of the gan power tube according to the present invention with reference to fig. 1-5.
Fig. 1 is a block schematic diagram of a hard-cut measurement circuit for measuring the dynamic resistance of a gan power transistor according to the present invention, the hard-cut measurement circuit includes: the high-voltage output circuit, the current regulating circuit, the measured gallium nitride power tube and the current sampling circuit are connected in series;
the voltage sampling circuit is connected in parallel with two ends of the tested gallium nitride power tube;
the high-speed driving circuit is used for providing driving voltage for the tested gallium nitride power tube to drive the tested gallium nitride power tube to be switched on or switched off;
the synchronous program control circuit is used for providing synchronous control signals under set time sequence for the high-voltage output circuit, the high-speed driving circuit, the current sampling circuit and the voltage sampling circuit respectively.
Fig. 2 is a schematic circuit diagram of a hard-switching measurement circuit of a dynamic resistance of a gan power tube according to the present invention, in which an output terminal of the high-speed driving circuit is respectively connected to a gate (G) and a source (S) of the gan power tube to be measured, the high-speed driving circuit includes a Driver, the Driver receives a synchronous control signal CTRL0 provided by the synchronous program control circuit, and outputs a high-speed driving signal, i.e., a driving voltage, to the gan power tube to be measured under the control of the synchronous control signal CTRL0, so as to control the gan power tube to be turned on or off;
the high-voltage output circuit comprises a capacitor C1 and a switch K1 which are connected in series, wherein a high-voltage source VI1 is also connected in parallel at two ends of the capacitor C1, the switch K1 receives a synchronous control signal CTRL1 provided by the synchronous program control circuit to be switched on or switched off, and the synchronous control signal CTRL1 is synchronous with the synchronous control signal CTRL0, namely the switch K1 is synchronously switched on or switched off with a Driver; when the switch K1 is turned off, the high voltage source VI1 charges the capacitor CI to make it in a saturated state, and when the switch K1 is turned on, the capacitor C1 can provide an instantaneous high voltage to the gallium nitride power tube, so as to solve the problem that a process of gradual voltage rise is required when a high voltage is directly provided by a power supply, which results in inaccurate measurement results;
the current regulating circuit is connected in series between the high-voltage output circuit and the gallium nitride power tube and comprises an adjustable resistor R1 with a 1000-ohm regulating range, and the control of the current flowing through the measuring circuit can be realized by regulating the resistance value of the adjustable resistor R1 so as to realize the setting of different current values in the measuring circuit;
the voltage sampling circuit is connected in parallel to two ends of a source electrode (S) and a drain electrode (D) of the gallium nitride power tube and comprises a high-precision voltmeter V1 and a high-voltage clamping circuit, the high-precision voltmeter V1 is used for collecting voltage values of the gallium nitride power tube corresponding to various time sequences in real time, the high-voltage clamping circuit can be realized through an Attenuator attentuator, the high-voltage clamping circuit mainly plays a role in high-voltage clamping protection in the circuit, and when the gallium nitride power tube is disconnected, the voltage at the drain end of the gallium nitride power tube is clamped so as to protect the high-precision voltmeter V1 from being damaged by high voltage;
the current sampling circuit is connected with the gallium nitride power tube in series and comprises a current sampling resistor R2 and a high-precision voltmeter V2 which are connected in parallel, the high-precision voltmeter V2 is used for acquiring the voltage value of the current sampling resistor R2 corresponding to each time sequence in real time, and the current value flowing through the gallium nitride power tube corresponding to each time sequence can be calculated according to the resistance value (such as 0.2 ohm) of the circuit sampling resistor R2;
and calculating corresponding resistance values according to the voltage value and the current value of the gallium nitride power tube corresponding to each time sequence, so as to obtain the parameters of the dynamic resistance of the measured gallium nitride power tube.
The synchronous program control circuit can be realized by adopting a programmable FPGA chip, and outputs synchronous control signals with set time sequence to be respectively sent to the high-speed drive circuit and the high-voltage output circuit through programming control, so that the hard-cutting measuring circuit is synchronously switched on or switched off, and the voltage value and the current value of the gallium nitride power tube are synchronously measured by the voltage sampling circuit and the current sampling circuit when the hard-cutting measuring circuit is switched on every time.
As shown in fig. 3, when the dynamic resistance measurement of the gan power tube is performed according to the hard-cut measurement circuit, the method includes the following steps:
s100: synchronous control signals with set time sequences are respectively provided for a high-speed drive circuit and a high-voltage output circuit through a synchronous program control circuit, and the drive voltage provided by the high-speed drive circuit to the grid electrode of the gallium nitride power tube to be tested and the instantaneous high voltage provided by the high-voltage output circuit between the drain electrode and the source electrode of the gallium nitride power tube are controlled to be synchronously supplied and disconnected according to the time sequences;
fig. 4 is a waveform diagram of each circuit part in a set timing output by the synchronous program control circuit, in which, in the set timing, the synchronous program control circuit outputs synchronous control signals CTRL0, CTRL1 to the high-speed driving circuit and the high-voltage output circuit respectively to control the synchronous on/off of the high-speed driving circuit and the high-voltage output circuit for X times, the duration of the synchronous control signals CTRL0, CTRL1 is 20us, the interval time between the synchronous control signals that control the on/off of the high-speed driving circuit and the high-voltage output circuit for two times is t (the time of t can be set according to actual measurement requirements, and can be generally set to 100ms), and the voltage sampling circuit and the current sampling circuit synchronously measure the voltage value and the current value in the duration of the on of the high-speed driving circuit and the high-voltage;
when receiving the synchronous control signals CTRL0 and CTRL1, the high-speed driving circuit and the high-voltage output circuit are turned on and output a high-speed driving signal and an instantaneous high voltage, where the high-speed driving circuit outputs the high-speed driving signal to the gate (G) and the source (S) of the gallium nitride power transistor, that is, the driving voltage is 5V; when the gallium nitride power tube is not conducted, the voltage output by the high-voltage output circuit to the position between the source electrode (S) and the drain electrode (D) of the gallium nitride power tube is 400V, and when the grid electrode (G) and the drain electrode (D) of the gallium nitride power tube are conducted under the driving of the driving voltage, the voltage of 400V between the source electrode (S) and the drain electrode (D) of the gallium nitride power tube is instantly pulled down; the waveform of the current regulating circuit corresponds to the time sequence of the driving voltage and the high voltage, and a preset current value IC can be determined by regulating the adjustable resistor R1, for example, when R1 is 100 ohms, the current value IC can be preset to 4A according to the voltage of 400V, and the current value IC can be switched on or off according to the set time sequence, and the corresponding waveform change is sent.
S200: obtaining current values and voltage values corresponding to each time sequence through a current sampling circuit and a voltage sampling circuit;
in this step, the voltage sampling circuit and the current sampling circuit respectively measure and obtain current values and voltage values corresponding to the time sequences under the set time sequences.
S300: calculating corresponding resistance values according to the current values and the voltage values corresponding to the time sequences to obtain parameters of the dynamic resistance of the measured gallium nitride power tube;
s400: judging whether the tested gallium nitride power tube is normal or not according to whether the characteristic curve corresponding to the parameter of the dynamic resistor is in accordance with the corresponding characteristic curve of the normal gallium nitride power tube or not;
fig. 5 is a schematic diagram of a dynamic resistance characteristic curve of a gan power tube, where RON0, RON1, and RON2 … are the measurement results of the resistance RON of the gan power tube when turned on corresponding to each time sequence, RON X is the measurement result of the resistance RON of the last time sequence, and by integrating the resistance RON measured for X times, a characteristic curve corresponding to the parameters of the dynamic resistance shown in fig. 5 can be generated, and according to the characteristics of the gan material, when the gan power tube in a normal working state is turned on at a high voltage, the characteristic curve of the dynamic resistance should continuously rise for a period of time, and gradually fall and become gentle after rising to a peak value, so that according to the dynamic resistance characteristic curve generated by the testing method, it can be determined whether the gan power tube meets the characteristics, if yes, it is determined to be normal, if not, judging it is abnormal;
as can be seen from the variation curve of fig. 5, at the time T2, the resistance RON of the gallium nitride power tube in the on state reaches the peak value, and then the times T3, T4, and T5 gradually decrease and become gentle, which indicates that the performance of the gallium nitride power tube reaches the steady state after multiple high-voltage conduction, and the variation range of the resistance gradually decreases, and the measurement result shows that:
RON0<RON1<RON2；
RON5<RON4<RON3<RON2；
the difference value between two adjacent RON4, RON5, … … and RONx is smaller than a set value, in this embodiment, the set value is only a floating condition representing two adjacent measurement results, and a specific value of the set value can be limited according to the requirement on precision;
according to the measurement result, the performance of the GaN power tube can be judged to be in accordance with the characteristics thereof, and the GaN power tube is judged to be in a normal state.
The measuring circuit and the measuring method provided by the invention can effectively measure the dynamic resistance of the gallium nitride material under the condition of high-voltage conduction, have simple structure, can realize the measurement of the dynamic resistance parameters of the gallium nitride power tube only by conducting the gallium nitride power tube according to a set time sequence and applying high voltage, and are convenient to use.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (7)
1. A hard-cutting measuring circuit for the dynamic resistance of a gallium nitride power tube is characterized by comprising:
the high-voltage output circuit is used for providing instantaneous high voltage between the drain electrode and the source electrode of the gallium nitride power tube through the main circuit;
a high-speed drive circuit for providing drive voltage to the grid electrode of the gallium nitride power tube to be tested;
the synchronous program control circuit is used for respectively providing synchronous control signals with set time sequences for the high-speed drive circuit and the high-voltage output circuit and controlling the drive voltage and the instantaneous high voltage to be synchronously supplied and disconnected according to the time sequences;
and the voltage sampling circuit is connected in parallel with the two ends of the drain electrode and the source electrode of the tested gallium nitride power tube.
2. The circuit of claim 1, wherein the high voltage output circuit comprises:
the capacitor and the switch module are connected in series and are connected in parallel with a high-voltage source at two ends of the capacitor;
the switch module receives the synchronous control signal provided by the synchronous program control circuit to conduct or cut off.
3. The circuit of claim 1, wherein the voltage sampling circuit comprises:
a voltmeter and a high-voltage clamping circuit which are connected in series.
4. The circuit of claim 1, wherein the current sampling circuit comprises:
the current sampling resistor is connected in series with the main circuit, and the voltmeter is connected in parallel with two ends of the current sampling resistor.
5. The circuit of claim 1, further comprising a current regulation circuit connected in series with the main circuit, comprising: and the adjustable resistor is connected in series with the main circuit.
6. A method for measuring the dynamic resistance of a gallium nitride power tube based on the circuit of any one of claims 1-5, comprising the steps of:
A. synchronous control signals with set time sequences are respectively provided for a high-speed drive circuit and a high-voltage output circuit through a synchronous program control circuit, and the drive voltage provided by the high-speed drive circuit to the grid electrode of the gallium nitride power tube to be tested and the instantaneous high voltage provided by the high-voltage output circuit between the drain electrode and the source electrode of the gallium nitride power tube are controlled to be synchronously supplied and disconnected according to the time sequences;
B. obtaining current values and voltage values corresponding to each time sequence through a current sampling circuit and a voltage sampling circuit;
C. and calculating corresponding resistance values according to the current values and the voltage values corresponding to the time sequences to obtain parameters of the dynamic resistance of the measured gallium nitride power tube.
7. The method of claim 6, further comprising, after step C:
and judging whether the tested gallium nitride power tube is normal or not according to whether the characteristic curve corresponding to the parameter of the dynamic resistor is in accordance with the corresponding characteristic curve of the normal gallium nitride power tube or not.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113252987A (en) * | 2021-07-05 | 2021-08-13 | 西安众力为半导体科技有限公司 | Dynamic resistance test circuit of GaN HEMT power device |
| CN116165504A (en) * | 2023-03-01 | 2023-05-26 | 安徽大学 | Method for detecting and correcting threshold voltage drift of gallium nitride transistor |
-
2019
- 2019-11-20 CN CN201911143046.8A patent/CN110794281A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113252987A (en) * | 2021-07-05 | 2021-08-13 | 西安众力为半导体科技有限公司 | Dynamic resistance test circuit of GaN HEMT power device |
| CN116165504A (en) * | 2023-03-01 | 2023-05-26 | 安徽大学 | Method for detecting and correcting threshold voltage drift of gallium nitride transistor |
| CN116165504B (en) * | 2023-03-01 | 2024-03-22 | 安徽大学 | Method for detecting and correcting threshold voltage drift of gallium nitride transistor |
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