CN211263687U - Soft-cutting measuring circuit for dynamic resistance of gallium nitride power tube - Google Patents
Soft-cutting measuring circuit for dynamic resistance of gallium nitride power tube Download PDFInfo
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Abstract
The utility model provides a measuring circuit is cut in soft of gallium nitride power tube dynamic resistance, include: the main circuit is connected between the drain electrode and the source electrode of the tested gallium nitride power tube and comprises a high-voltage output circuit and a low-voltage output circuit which are connected in parallel; a high-speed drive circuit for providing drive voltage to the grid electrode of the gallium nitride power tube to be tested; the synchronous program control circuit is used for respectively providing synchronous control signals with set time sequences for the high-speed drive circuit, the high-voltage output circuit and the low-voltage output circuit and controlling the drive voltage, the high voltage and the low voltage to be synchronously supplied and disconnected according to the time sequences; and the voltage sampling circuit is connected in parallel with the two ends of the drain electrode and the source electrode of the tested gallium nitride power tube. The utility model discloses can realize carrying out the high-low pressure fast and switch, and support the synchro control of a plurality of chronogenesis, can effectively measure the dynamic resistance of gallium nitride power tube under the dynamic behavior.
Description
Technical Field
The invention relates to the technical field of integrated circuit measurement, in particular to a soft-switching measurement circuit for a dynamic resistance of a gallium nitride power tube.
Background
Gallium nitride (GaN) is a new semiconductor material, which has the characteristics of large forbidden band width, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength, high hardness and the like, is widely applied to new energy vehicles, rail transit, smart grids, semiconductor illumination and new-generation mobile communication in the early stage, and is known as a third-generation semiconductor material. With the control of the breakthrough cost, gallium nitride is widely used in consumer electronics and other fields, and a charger is one of them. As the demand for gallium nitride increases and more applications become more and more important, the measurement of gallium nitride becomes more and more important, and the measurement of gallium nitride is divided into two categories, static parameter and dynamic parameter.
The static parameters mainly refer to the intrinsic relevant parameters which are irrelevant to the working conditions, and mainly comprise: the measurement of gate level turn-on voltage, gate level breakdown voltage, collector-emitter withstand voltage, inter-collector-emitter leakage current, parasitic capacitance (input capacitance, transfer capacitance, output capacitance), and the associated characteristic curves of the above parameters.
The dynamic parameter mainly refers to the dynamic on-resistance of the gallium nitride power tube under the dynamic working condition, because the trap in the gallium nitride power tube structure and the long length of the depletion region need to be designed for adapting to the high-voltage breakdown voltage, thus, when the device is turned on immediately after the high voltage blocking state, substantial channel electrons are trapped, therefore, the power tube does not participate in conduction, which results in that the gallium nitride power tube has higher on-resistance under the dynamic working condition than under the static state, the dynamic on-resistance, i.e. the dynamic resistance, is of great significance for studying the operating characteristics of the gan power tube, however in the prior art, there is no simple and effective measuring circuit to measure the dynamic resistance of the gan power tube to reflect the characteristics of the gan power tube under dynamic operating conditions, therefore, it is necessary to design a measuring circuit to effectively measure the dynamic resistance of the gan power tube.
Disclosure of Invention
In view of the above, the main objective of the present invention is to provide a soft-switching measurement circuit and a measurement method for a dynamic resistance of a gan power transistor, which can effectively measure the dynamic resistance of the gan power transistor under dynamic working conditions by designing a soft-switching measurement circuit capable of rapidly switching between high voltage and low voltage and supporting multiple timing synchronization program controls.
The technical scheme adopted by the invention is that the soft switching measuring circuit of the dynamic resistance of the gallium nitride power tube comprises:
the main circuit is connected between the drain electrode and the source electrode of the measured gallium nitride power tube and comprises a high-voltage output circuit and a low-voltage output circuit which are connected in parallel, the high-voltage output circuit is used for providing high voltage between the drain electrode and the source electrode of the gallium nitride power tube through the main circuit, and the low-voltage output circuit is used for providing low voltage between the drain electrode and the source electrode of the gallium nitride power tube through the main circuit;
a high-speed drive circuit for providing drive voltage to the grid electrode of the gallium nitride power tube to be tested;
the synchronous program control circuit is used for respectively providing synchronous control signals with set time sequences for the high-speed drive circuit, the high-voltage output circuit and the low-voltage output circuit and controlling the drive voltage, the high voltage and the low voltage to be synchronously supplied and disconnected according to the time sequences;
and the voltage sampling circuit is connected in parallel with the two ends of the drain electrode and the source electrode of the tested gallium nitride power tube.
Therefore, the invention outputs the synchronous control signal of the set time sequence through the synchronous program control circuit to control the high-voltage output circuit, the low-voltage output current and the high-speed driving circuit in the soft switching measuring circuit to be sequentially conducted according to the set time sequence and measure the voltage value and the current value of the gallium nitride power tube under each time sequence so as to calculate the resistance value corresponding to each time sequence.
Preferably, the high voltage output circuit includes:
the high-voltage source, the first switch and the first resistor are sequentially connected in series;
the first switch receives the synchronous control signal provided by the synchronous program control circuit to conduct or cut off.
Therefore, the high-voltage source can be used for providing a voltage not higher than 1000V, the maximum current capacity of the high-voltage source is 10mA, the first switch can receive the synchronous control signal to control the high-voltage source to be turned on or turned off, and the first resistor is used for realizing current clamping of the high-voltage source when the high-voltage circuit is switched to the low-voltage circuit.
Preferably, the voltage sampling circuit includes:
a voltmeter and a high-voltage clamping circuit which are connected in series.
Therefore, the voltage sampling circuit can acquire the voltages at two ends of the gallium nitride power tube in real time through a high-precision voltmeter, and the high-voltage clamping circuit can clamp the high voltage of the drain electrode of the gallium nitride power tube to be detected when the gallium nitride power tube is switched off, so that the high-precision voltmeter is protected from being damaged by the high voltage.
Preferably, the low voltage output circuit includes:
the low-voltage source is connected with the drain electrode and the source electrode of the gallium nitride power tube to be tested through a four-wire Kelvin circuit;
the low-voltage source is connected with the drain electrode of the tested gallium nitride power tube after being connected with a third switch in series through a Force _ High wire of the four-wire Kelvin circuit; the low-voltage source is also connected with the drain electrode of the tested gallium nitride power tube after being connected with the High-voltage clamping circuit in series through a Sense _ High line of a four-wire Kelvin circuit, and the third switch receives a synchronous control signal provided by the synchronous program control circuit to conduct or shut off;
and a Force _ Low line and a Sense _ Low line of the four-wire Kelvin circuit are respectively connected between the negative output end of the Low-voltage source and the source electrode of the tested gallium nitride power tube.
The High-voltage output circuit provides High voltage for the drain and the source of the gallium nitride power tube to be measured, after the gallium nitride power tube is in a High-voltage environment for a period of time, the Low-voltage output circuit rapidly switches the High voltage between the drain and the source of the gallium nitride power tube to be measured to Low voltage, and then measures the current value and the voltage value of the gallium nitride power tube to be measured to obtain the resistance value change parameters under the dynamic working voltage, the Low-voltage output circuit is connected to the drain and the source of the gallium nitride power tube to be measured through a four-wire Kelvin circuit (Force _ High line, Sense _ High line, Force _ Low line, Sense _ Low line), wherein the Force _ High line of the Kelvin circuit (or High-end driving current line) is connected to the drain of the gallium nitride power tube to be measured through a third switch for isolating the High-voltage source from the Low-voltage source, and the Sense _ High-end line of the four-wire Kelvin circuit (or High-end sensing) is connected to the voltage line of the gallium nitride power tube to be measured after being connected to the High-voltage clamp circuit in series And the drain electrode is used for providing low voltage for the tested gallium nitride power tube.
Preferably, the low voltage output circuit further includes a reverse current suppressing circuit connected in parallel to both ends of the third switch, including: a second resistor and a fourth switch connected in series;
the fourth switch receives the synchronous control signal provided by the synchronous program control circuit to conduct or cut off.
Therefore, the second resistor is a shunt resistor, and the switching speed of the high voltage to the low voltage can be reduced by controlling the on or off of the fourth switch, so that the reverse current flowing to the drain electrode of the gallium nitride power tube to be tested is reduced.
Preferably, a second switch is connected in series between the Force _ High line and the Sense _ High line, and the second switch receives the synchronous control signal provided by the synchronous program control circuit to be turned on or off so as to control the formation of a short circuit or an open circuit between the Force _ High line and the Sense _ High line.
Therefore, when the high-voltage output circuit applies high voltage to the drain electrode and the source electrode of the tested gallium nitride power tube, the low-voltage output circuit is in an off state, and before the high voltage is switched to the low voltage, the second switch needs to be switched on to ensure that the Kelvin circuit of the low-voltage source output end is short-circuited and reaches a preset low-voltage value in advance, otherwise, if the Kelvin circuit of the low-voltage source output end is in an open-circuit state, the low-voltage source needs about 20ms of adjustment time to enable the low-voltage source to reach the preset low-voltage value.
The invention also provides a measuring method of the dynamic resistance of the gallium nitride power tube, which is based on the soft-switching measuring circuit of the dynamic resistance of the gallium nitride power tube, and comprises the following steps:
A. synchronous control signals with set time sequences are respectively provided for a high-speed drive circuit, a high-voltage output circuit and a low-voltage output circuit through a synchronous program control circuit, the drive voltage provided by the high-speed drive circuit to the grid electrode of the tested gallium nitride power tube is controlled, the high-voltage output circuit provides high voltage between the drain electrode and the source electrode of the gallium nitride power tube, and the low-voltage output circuit provides low voltage between the drain electrode and the source electrode of the gallium nitride power tube according to the time sequences for synchronous supply and disconnection;
B. obtaining current values and voltage values corresponding to time sequences through a low-voltage output circuit and a voltage sampling circuit;
C. and calculating corresponding resistance values according to the current values and the voltage values corresponding to the time sequences to obtain parameters of the dynamic resistance of the measured gallium nitride power tube.
According to the measurement method, the high-speed drive circuit, the high-voltage output circuit and the low-voltage output circuit are switched on and off according to the set time sequence through the synchronous control signal provided by the synchronous program control circuit, the voltage value and the current value of the gallium nitride power tube are synchronously measured, and the resistance value of each time sequence can be calculated by using the measured voltage value and current value according to the ohm law so as to obtain the parameter of the dynamic resistance of the measured gallium nitride power tube.
Preferably, step C is followed by:
and judging whether the tested gallium nitride power tube is normal or not according to whether the characteristic curve corresponding to the parameter of the dynamic resistor is in accordance with the corresponding characteristic curve of the normal gallium nitride power tube or not.
Therefore, according to the characteristics of the gallium nitride material, the on-resistance of the normal gallium nitride power tube is smaller in the low-voltage working state, and when the gallium nitride power tube is switched to the low-voltage working state after a period of high voltage is applied to the gallium nitride power tube, the on-resistance of the gallium nitride power tube is increased, so that whether the measurement result is correct can be judged according to the characteristics, and whether the measured gallium nitride power tube is normal is judged.
Preferably, the timing synchronization control signal includes:
controlling the high-speed driving circuit to drive the tested gallium nitride power tube to be conducted and controlling the low-voltage output circuit to provide low voltage between the drain electrode and the source electrode of the gallium nitride power tube, wherein the duration time is T1;
and controlling the high-speed driving circuit to drive the tested gallium nitride power tube to be disconnected and controlling the high-voltage output circuit to provide high voltage between the drain electrode and the source electrode of the gallium nitride power tube, wherein the duration is T2, and T2 is more than T1.
Therefore, in the invention, the low voltage and the high voltage are output at intervals between the drain electrode and the source electrode of the gallium nitride power tube to be tested, so that the gallium nitride power tube is under the dynamic working voltage, and the resistance value under the dynamic working voltage is measured to obtain the parameter of the dynamic resistance.
Drawings
FIG. 1 is a schematic circuit diagram of a soft-switching measurement circuit for a dynamic resistance of a GaN power transistor according to the present invention;
FIG. 2 is a flow chart of a method for measuring the dynamic resistance of a GaN power tube according to the present invention;
FIG. 3 is a waveform diagram of each circuit portion under the set timing of the present invention;
FIG. 4 is a diagram illustrating the dynamic resistance characteristic curve of the GaN power transistor according to the present invention.
Detailed Description
The following describes a specific embodiment of the soft-switching measurement circuit of the dynamic resistance of the gan power tube according to the present invention with reference to fig. 1-4.
Fig. 1 is a schematic circuit diagram of a soft-switching measurement circuit of a dynamic resistance of a gan power transistor according to the present invention, the soft-switching measurement circuit includes:
the synchronous program control circuit (not shown in the figure) can be realized by adopting a programmable FPGA chip, and outputs a synchronous control signal with a set time sequence through programming control, so that the soft-switching measuring circuit is synchronously switched on or switched off, and the voltage value and the current value of the gallium nitride power tube are synchronously measured when the soft-switching measuring circuit is switched on each time;
the positive output end of the high-voltage source VI1 is connected with an MOS switch K1 and a resistor R1 in series in sequence and then connected to the drain (D) of the tested gallium nitride power tube, the MOS switch K1 receives a synchronous control signal CTRL1 provided by a synchronous program control circuit, the resistance value of the resistor R1 is 1000 ohms, and the current clamping of the high-voltage source output end can be realized when the high-voltage source VI1 is switched to the low-voltage source; the negative output end of the high-voltage source VI1 is connected to the source (S) of the tested gallium nitride power tube;
a Low voltage source VI2, the output of which is Low voltage output and current measurement through a four-wire kelvin circuit comprising a drive current line Force _ High and a Sense voltage line Sense _ High connected at the positive output of the Low voltage source VI2, and a drive current line Force _ Low and a Sense voltage line Sense _ Low connected at the negative output of the Low voltage source VI 2; the MOS switch K3 receives a synchronous control signal CTRL3 provided by a synchronous program control circuit, can be used for realizing the isolation of a low-voltage source VI2 and a High-voltage source VI1 so as to protect a low-voltage source VI2, can enable low voltage provided by a low-voltage source VI2 to be quickly established to the drain (D) of the detected gallium nitride power tube due to the quick conduction capability of the MOS switch K3, is also connected with an MOS switch K4 and a resistor R2 in series at two ends of the MOS switch K3 in parallel, receives the synchronous control signal CTRL4 provided by the synchronous program control circuit, and can be used for reducing the switching speed from High voltage to low voltage, and the resistor R2 is a shunt resistor and can be used for reducing reverse current flowing to the drain of the detected gallium nitride power tube; the sensing voltage line Sense _ High is connected in series with an Attenuator attentuator in the voltage sampling circuit and then is connected to the drain (D) of the measured gallium nitride power tube, and low voltage is provided for the drain (D) of the measured gallium nitride power tube; an MOS switch K2 is also connected in series between the driving current line Force _ High and the sensing voltage line Sense _ High, the MOS switch K2 receives a synchronous control signal CTRL2 provided by a synchronous program control circuit, when a High voltage is continuously applied to the gan power tube to be tested, the MOS switch K3 is in an off state, at this time, the MOS switch K2 is turned on, so that the kelvin circuit of the low voltage source VI2 is short-circuited, and the low voltage source VI2 can reach a preset low voltage value in advance, thereby preventing a certain impact from being caused to the low voltage source VI2 by a High voltage at the switching moment when the High voltage is switched to the low voltage, and the low voltage source VI2 needs an adjustment time of about 20ms to reach the preset low voltage value;
the output end of the Driver is respectively connected with the grid (G) and the source (S) of the tested gallium nitride power tube, the Driver receives a synchronous control signal CTRL0 provided by the synchronous program control circuit and outputs a high-speed driving signal, namely a driving voltage to the tested gallium nitride power tube under the control of the synchronous control signal CTRL0 so as to control the conduction or the disconnection of the tested gallium nitride power tube;
the voltage sampling circuit is connected in parallel with two ends of a drain (D) and a source (S) of the gallium nitride power tube and comprises a High-precision voltmeter V1 and an Attenuator attentuator which are connected in series, wherein the Sense _ High of the four-wire Kelvin circuit is connected in series with the Attenuator attentuator to provide low voltage for the gallium nitride power tube to be tested, the High-precision voltmeter V1 acquires voltage values of the gallium nitride power tube corresponding to various time sequences in real time under the control of a synchronous control signal of a set time sequence provided by the synchronous program control circuit, and the Attenuator attentuator mainly plays a role of High-voltage clamping protection in the circuit and clamps the High voltage of the drain of the gallium nitride power tube to be tested when the gallium nitride power tube to be tested is switched off so as to protect the High-precision voltmeter and the low-voltage source VI2 from being damaged by the High voltage;
under the above-mentioned time sequence of settlement, the synchronous control signal logic that the synchronous program control circuit provided is:
when a high voltage source applies high voltage to the measured gallium nitride power tube, the Driver does not output driving voltage, and the measured gallium nitride power tube is not conducted;
when the low-voltage source is conducted, after the high voltage applied to the measured gallium nitride power tube is switched into low voltage, the Driver outputs driving voltage to drive the measured gallium nitride power tube to be conducted, and meanwhile, the voltage sampling circuit and the low-voltage source VI2 synchronously measure the voltage value and the current value;
the high and low pressures are applied at intervals and the low pressure is applied for a much shorter duration than the high pressure, typically 5ms for the low pressure and 100ms for the high pressure.
As shown in fig. 2, when measuring the dynamic resistance of the gan power tube according to the soft-switching measurement circuit, the method comprises the following steps:
s100: synchronous control signals with set time sequences are respectively provided for a high-speed drive circuit, a high-voltage output circuit and a low-voltage output circuit through a synchronous program control circuit, the drive voltage provided by the high-speed drive circuit to the grid electrode of the tested gallium nitride power tube is controlled, the high-voltage output circuit provides high voltage between the drain electrode and the source electrode of the gallium nitride power tube, and the low-voltage output circuit provides low voltage between the drain electrode and the source electrode of the gallium nitride power tube according to the time sequences for synchronous supply and disconnection;
fig. 3 shows a waveform schematic diagram of each circuit part in a set time sequence output by the synchronous program control circuit, where in the set time sequence, the synchronous program control circuit provides synchronous control signals for the high-speed driving circuit, the high-voltage output circuit, and the low-voltage output circuit, respectively, to control their on or off in the set time sequence, in the present invention, the high-voltage to low-voltage switching of the soft-switching measurement circuit is mainly realized by the on or off of the low-voltage output circuit, and in the actual measurement, the switch K1 of the high-voltage output circuit can always maintain an on state, specifically, a complete time sequence synchronous control cycle is as follows:
at time t1, controlling a Driver to output a 5V driving voltage to a grid (G) of the measured gallium nitride power tube to drive the measured gallium nitride power tube to be switched on, switching on switches K1 and K3, switching off switches K2 and K4, pulling down a high voltage 500V output by a high voltage source VI1 by a switched-on switch K3, keeping the voltage applied to the measured gallium nitride power tube at a low voltage of 0.1V, and keeping the low voltage state for 5ms until time t 1';
at time t 1', controlling a Driver to turn off a 5V driving voltage output to a grid (G) of a measured gallium nitride power tube, driving the gallium nitride power tube to be turned off, turning on switches K1 and K2, turning off switches K3 and K4, applying a High voltage 500V output by a High voltage source VI1 to the measured gallium nitride power tube, isolating a low voltage source from the High voltage source, turning on a switch K2 to short-circuit a driving current line Force _ High and a sensing voltage line Sense _ High of a Kelvin circuit, enabling the low voltage source to reach a preset voltage value in advance through the short-circuited Kelvin circuit, and keeping the High voltage state for 100ms until time t 2;
at the time t2, controlling a Driver to output a 5V driving voltage to a grid (G) of the measured gallium nitride power tube to drive the measured gallium nitride power tube to be switched on, switching on switches K1 and K4, switching off switches K2 and K3, and reducing reverse current flowing to the measured gallium nitride power tube at the moment of switching from high voltage to low voltage by a switch K4 and a resistor R2; and then the switches K1 and K3 are turned on, the switches K2 and K4 are turned off, the voltage applied to the tested gallium nitride power tube is pulled down to be 0.1V of low voltage again, and the low voltage state is kept for 5ms until the time t 2'.
S200: obtaining current values and voltage values corresponding to time sequences through a low-voltage output circuit and a voltage sampling circuit;
in the step, voltage values and current values corresponding to low voltage duration time in each time sequence are obtained through synchronous measurement of the voltage sampling circuit and the low voltage source VI 2;
the waveform of the current value IC measured by the low voltage source VI2 in each low voltage duration is shown in fig. 3, and the resistance value of the gan power tube to be measured at each time sequence can be calculated according to the current value IC measured by the low voltage source VI2 and the voltage measured by the voltmeter V1.
S300: calculating corresponding resistance values according to the current values and the voltage values corresponding to the time sequences to obtain parameters of the dynamic resistance of the measured gallium nitride power tube;
s400: judging whether the tested gallium nitride power tube is normal or not according to whether the characteristic curve corresponding to the parameter of the dynamic resistor is in accordance with the corresponding characteristic curve of the normal gallium nitride power tube or not;
fig. 4 is a schematic diagram of a dynamic resistance characteristic curve of a gan power tube, where RON1 and RON2 are measured results of resistance RON of the gan power tube corresponding to the timing sequence shown in fig. 3, respectively, and the measured results are integrated to generate a characteristic curve corresponding to the parameters of the dynamic resistance shown in fig. 4, and according to the characteristics of the gan material, the on-resistance of a normal gan power tube is small in a low-voltage operating state, and after a high voltage is applied to the drain and the source for a certain period of time, according to the characteristics, the on-resistance of the gan power tube is increased in an immediately next low-voltage operating state, and the increasing process may continue for several periods of switching between high voltage and low voltage, and the area is stable; therefore, according to the dynamic resistance characteristic curve obtained by the soft-cutting measuring circuit, whether the gallium nitride power tube accords with the characteristics of the gallium nitride power tube can be judged, if so, the gallium nitride power tube is judged to be normal, and if not, the gallium nitride power tube is judged to be abnormal;
as can be seen from the variation curve of fig. 4, at time T1 (T1-T1 '), the resistance RON1 of the on state of the gallium nitride power tube is low, and then at time T2 (T2-T2'), the resistance RON2 of the on state of the gallium nitride power tube starts to increase, and it is found from the measurement result that:
RON1<RON2；
((RON2-RON1)/RON1)*100％＞x％；
wherein, x% is a floating limit (limit) proposed by the designer of the gallium nitride power tube, and is used for reflecting the dynamic parameter change condition of the gallium nitride power tube in a dynamic working state;
according to the measurement result, the performance of the GaN power tube can be judged to be in accordance with the characteristics thereof, and the GaN power tube is judged to be in a normal state.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (6)
1. A soft switching measuring circuit of dynamic resistance of a gallium nitride power tube is characterized by comprising:
the main circuit is connected between the drain electrode and the source electrode of the measured gallium nitride power tube and comprises a high-voltage output circuit and a low-voltage output circuit which are connected in parallel, the high-voltage output circuit is used for providing high voltage between the drain electrode and the source electrode of the gallium nitride power tube through the main circuit, and the low-voltage output circuit is used for providing low voltage between the drain electrode and the source electrode of the gallium nitride power tube through the main circuit;
a high-speed drive circuit for providing drive voltage to the grid electrode of the gallium nitride power tube to be tested;
the synchronous program control circuit is used for respectively providing synchronous control signals with set time sequences for the high-speed drive circuit, the high-voltage output circuit and the low-voltage output circuit and controlling the drive voltage, the high voltage and the low voltage to be synchronously supplied and disconnected according to the time sequences;
and the voltage sampling circuit is connected in parallel with the two ends of the drain electrode and the source electrode of the tested gallium nitride power tube.
2. The circuit of claim 1, wherein the high voltage output circuit comprises:
the high-voltage source, the first switch and the first resistor are sequentially connected in series;
the first switch receives the synchronous control signal provided by the synchronous program control circuit to conduct or cut off.
3. The circuit of claim 1, wherein the voltage sampling circuit comprises:
a voltmeter and a high-voltage clamping circuit which are connected in series.
4. The circuit of claim 3, wherein the low voltage output circuit comprises:
the low-voltage source is connected with the drain electrode and the source electrode of the gallium nitride power tube to be tested through a four-wire Kelvin circuit;
the low-voltage source is connected with the drain electrode of the tested gallium nitride power tube after being connected with a third switch in series through a Force _ High wire of the four-wire Kelvin circuit; the low-voltage source is also connected with the drain electrode of the tested gallium nitride power tube after being connected with the High-voltage clamping circuit in series through a Sense _ High line of a four-wire Kelvin circuit, and the third switch receives a synchronous control signal provided by the synchronous program control circuit to conduct or shut off;
and a Force _ Low line and a Sense _ Low line of the four-wire Kelvin circuit are respectively connected between the negative output end of the Low-voltage source and the source electrode of the tested gallium nitride power tube.
5. The circuit of claim 4, wherein the low voltage output circuit further comprises a reverse current suppression circuit connected in parallel across the third switch, comprising: a second resistor and a fourth switch connected in series;
the fourth switch receives the synchronous control signal provided by the synchronous program control circuit to conduct or cut off.
6. The circuit according to claim 4, wherein a second switch is connected in series between the Force _ High line and the Sense _ High line, and the second switch receives the synchronous control signal provided by the synchronous programmable circuit to be switched on or off so as to control the formation of a short circuit or an open circuit between the Force _ High line and the Sense _ High line.
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