CN113658925A - 多层间隔件及包括其的双面冷却电源模块 - Google Patents

多层间隔件及包括其的双面冷却电源模块 Download PDF

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CN113658925A
CN113658925A CN202011083319.7A CN202011083319A CN113658925A CN 113658925 A CN113658925 A CN 113658925A CN 202011083319 A CN202011083319 A CN 202011083319A CN 113658925 A CN113658925 A CN 113658925A
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metal
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layers
semiconductor chip
metal layer
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俞明日
朴准熙
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Hyundai Motor Co
Kia Corp
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Kia Motors Corp
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Abstract

本发明涉及多层间隔件及包括其的双面冷却电源模块。一种热膨胀系数和热导率可控的多层间隔件，以及包括该多层间隔件的双面冷却电源模块，所述多层间隔件设置在双面冷却电源模块中的半导体芯片和基板之间。所述多层间隔件包括第一金属层和第二金属层，所述第一金属层由第一金属制成并且设置为至少各自的最外层，所述第二金属层由第二金属制成并且布置在设置为最外层的第一金属层之间，所述第二金属具有的热膨胀系数低于所述第一金属的热膨胀系数。

Description

多层间隔件及包括其的双面冷却电源模块
技术领域
本发明涉及一种多层间隔件和包括该多层间隔件的双面冷却电源模块。更具体地，本发明涉及一种热膨胀系数和热导率可控的多层间隔件以及包括该多层间隔件的双面冷却电源模块。
背景技术
混合动力车辆或电动车辆需要电动机来进行推进。电动机由电源模块控制。因此，可以调节电动机的起动和输出功率。
由于持续向电源模块施加高输出的电，因此电源模块中会产生大量热量。因此，进行了许多尝试来冷却电源模块。其中，存在一种双面冷却电源模块，其构造为使得每一者均设置有冷却器的基板分别设置在半导体芯片之上和之下，所述半导体芯片是电源模块的关键组件。在这种结构中，从两侧冷却半导体芯片。
为了将操作信号输入至半导体芯片，信号引件经由引线而通过引线结合而连接至半导体芯片。
由于引线结合的特性，引线不可避免地会弯曲，因此当将半导体芯片布置在基板上时，引线与基板的表面接触。为了防止基板与引线之间的接触，在基板与半导体芯片之间设置有间隔件。
半导体芯片中产生的热量和流经半导体芯片的电流很可能传导至间隔件。因此，间隔件必须由具有高电导率、高热导率并且与基板材料的热膨胀系数的差异最小的材料制成。
现有技术中的间隔件通常由Al-SiC、Al-C等制成。在当前情况下，由于这些材料价格昂贵，因此不能以低价格提供现有技术中的间隔件。另一方面，在间隔件由相对便宜的纯铜(Cu)制成的情况下，由于铜具有较高的热膨胀系数而基板具有较低的热膨胀系数，因此在铜间隔件和基板之间，热膨胀系数存在很大差异，从而导致间隔件中的应力很大。
图1是示例性地示出了典型电源模块的截面图，图2是示例性地示出了典型间隔件的截面图。
如图1所示，典型电源模块包括上部基板11和下部基板12。半导体芯片40设置在上部基板11和下部基板12之间。另外，分别在上部基板11和半导体芯片40的上表面之间以及下部基板12和半导体芯片40的下表面之间设置多层结构，每个结构包括金属板21和22(或23/24和25)和插入在金属板21和22(或23/24和25)之间的绝缘层81(或82)。热界面材料TMI71结合在金属板21和上部基板11之间，热界面材料TMI 72结合在金属板23和下部基板12之间。
半导体芯片40通过引线42连接至信号引件41。另外，电源引件50经由金属板22和25连接至半导体芯片40，并且中间间隔件60布置为保持金属层22和金属25之间的距离。
金属板22与间隔件30之间的接合件S以及间隔件30与半导体芯片40之间的接合件S通过焊接形成。
在当前情况下，如图2所示，间隔件30由诸如铜-钼(Cu-Mo)和铝-碳化硅(Al-SiC)的复合材料而非诸如铜(Cu)的纯金属制成，以使间隔件30和焊接接合件S之间的热膨胀系数的差异最小化。图2是由Cu-Mo复合材料(其由铜(Cu)31和钼(Mo)32组成)制成的间隔件的示意图。
间隔件30的表面覆盖有Cu层33，以防止半导体芯片在高温工艺期间由于焊接接合件和半导体芯片之间的金属间扩散而损坏。
间隔件30的材料必须提供高的散热性。因此，间隔件的全部材料中的复合材料的含量是至关重要的。然而，使用复合材料作为间隔件的材料存在许多问题：复合材料的制备复杂；难以控制用于获得均匀复合材料的条件；均匀性差的复合材料会降低电源模块的可靠性。
在间隔件的表面上电镀Cu层33的方法具有增加与品质控制和可加工性相关的成本的问题。
公开于本发明背景技术部分的信息仅仅旨在加深对本发明的总体背景的理解，而不应被视为承认或以任何形式暗示该信息构成已为本领域技术人员所公知的现有技术。
发明内容
本发明的各个方面致力于提供一种热膨胀系数和热导率可控的多层间隔件以及包括该多层间隔件的双面冷却电源模块。
根据本发明的各个方面，在双面冷却电源模块中提供了一种多层间隔件，所述多层间隔件设置在半导体芯片和基板之间。所述多层间隔件包括第一金属层和第二金属层，所述第一金属层由第一金属制成并且设置为至少各自的最外层，所述第二金属层由第二金属制成并且布置在第一金属层之间，所述第二金属的热膨胀系数低于所述第一金属的热膨胀系数。
在多层间隔件中，将第二金属层设置为单个并且堆叠在设置为最外层的第一金属层之间。
在多层间隔件中，多个第一金属层和多个第二金属层可以交替布置在设置为最外层的第一金属层之间。
在多层间隔件中，第二金属可以表现出比第一金属更低的焊料润湿性。
在多层间隔件中，第二金属层可以形成为整个间隔件的厚度的33％至50％。
在多层间隔件中，第一金属可以是Cu，第二金属可以是Mo或CuMo。
根据本发明的各个方面，提供了一种双面冷却电源模块，其包括设置在上部基板和下部基板之间的半导体芯片以及布置在半导体芯片和上部基板之间的间隔件。所述间隔件包括：第一金属层，其由第一金属制成并且设置为最外层；和第二金属层，其由第二金属制成并且设置在第一金属层之间，所述第二金属具有的热膨胀系数低于所述第一金属的热膨胀系数。
所述双面冷却电源模块可以进一步包括：信号引件，通过该信号引件将信号发送至半导体芯片或者从半导体芯片接收信号；引线，其连接半导体芯片和信号引件；以及金属板，其由导电材料制成并且分别形成在间隔件和上部基板之间以及半导体芯片和下部基板之间，其中，金属板和间隔件通过焊接部分彼此连接，间隔件和半导体芯片通过另一焊接部分彼此连接。
在双面冷却电源模块中，第二金属可以表现出比第一金属更低的焊料润湿性。
在双面冷却电源模块中，所述间隔件可以具有单个第二金属层，该单个第二金属层堆叠在设置为最外层的第一金属层之间。
在双面冷却电源模块中，所述间隔件可以包括多个第一金属层和多个第二金属层，所述多个第二金属层交替地堆叠在设置为最外层的第一金属层之间。
在双面冷却电源模块中，第一金属可以是Cu，第二金属可以是Mo或CuMo。
在双面冷却电源模块中，形成间隔件的第二金属层可以形成为整个间隔件的厚度的33％至50％。
根据本发明的各种示例性实施方案，通过堆叠具有不同的热膨胀系数和热导率的多个金属材料层来形成间隔件。因此，可以获得厚度容易调节的间隔件。
另外，不需要形成Cu镀层。这防止了半导体芯片和间隔件之间的热阻的增加，因此可以提高电源模块的可靠性。
此外，通过调节不同金属层的数量和每个不同金属层的厚度，可以容易地控制间隔件的热膨胀系数和热导率。
本发明的方法和装置具有其它特征和优点，这些特征和优点从并入本文中的附图和随后的具体实施方式中将是显而易见的，或者在并入本文中的附图和随后的具体实施方式中进行详细陈述，这些附图和具体实施方式共同用于解释本发明的特定原理。
附图说明
图1是示例性地示出了典型电源模块的截面图；
图2是示例性地示出了典型间隔件的截面图；
图3是示例性地示出了根据本发明各种示例性实施方案的间隔件的截面图；
图4是示例性地示出了根据本发明各种示例性实施方案的间隔件的截面图；以及
图5A和图5B是示出了其中分别形成有间隔件和焊接接合件的对比示例和本发明示例的示意图。
可以理解，附图并不一定按比例绘制，而是显示了说明本发明的基本原理的各种特征的略微简化的画法。本文所包括的本发明的具体设计特征(包括例如具体尺寸、方向、位置和形状)将部分地由具体所要应用和使用的环境来确定。
在这些图中，贯穿附图的多幅图，附图标记指代本发明的相同或等同的部件。
具体实施方式
现在将详细参考本发明的各种实施方案，这些实施方案的示例在附图中示出并描述如下。尽管将与本发明的示例性实施方案相结合来对本发明进行描述，但是将理解，本说明书并非旨在将本发明限制为那些示例性实施方案。相反，本发明旨在不仅覆盖本发明的示例性实施方案，而且还覆盖可以被包括在由所附权利要求所限定的本发明的精神和范围之内的各种选择形式、修改形式、等价形式以及其它实施方案。
下面将参照附图来更详细地描述本发明的实施方案。然而，本发明不限于下文将包括的实施方案，而可以实现其各种不同的实施方案。提供这些实施方案仅仅是为了对本发明进行完整的公开，并且向本发明的各种示例性实施方案所属领域的普通技术人员提供对本发明的范围的充分了解。本发明的范围可以仅由权利要求书限定。相同的组成元件以相同的附图标记提供。
图3是示例性地示出了根据本发明各种示例性实施方案的间隔件的截面图。
类似于图1中所示的间隔件30，根据本发明各种示例性实施方式的间隔件设置在上部基板11和半导体芯片40之间。
在当前情况下，包括间隔件100的电源模块包括：信号引件41，通过该信号引件41而将信号发送至半导体芯片40并从半导体芯片40接收信号；引线42，其将半导体芯片40和信号引件41彼此连接；以及金属板21至25，其由导电材料制成。金属板21和22形成在间隔件100和上部基板11之间，金属板23、24和25形成在半导体芯片40和下部基板12之间。
除了间隔件100、间隔件100的位置和结合方法以外，图1所示的典型电源模块和根据本发明各种示例性实施方案的电源模块100在构成元件方面是相同的。因此，将不给出多余的描述。
然而，根据本发明示例性实施方案的间隔件100是其中堆叠有不同金属材料的层的多层结构。
更具体地，间隔件100包括第一金属层110和第二金属层120，所述第一金属层110由第一金属制成并且作为最外层，所述第二金属层120由第二金属制成并且布置在所述第一金属层110之间，所述第二金属具有比所述第一金属更低的热膨胀系数。即，间隔件100是通过以第一金属层110、第二金属层120和第一金属层110这一顺序依次堆叠而得到的。
在当前情况下，制成第一金属层110的第一金属和制成第二金属层120的第二金属具有不同的热膨胀系数和热导率。因此，通过调节第一金属层110和第二金属层120各自的厚度来调节整个间隔件的热膨胀系数和热导率。
特别地，第一金属的热膨胀系数低于第二金属的热膨胀系数。
而且，第二金属的焊料润湿性低于第一金属。
例如，第一金属由Cu制成，第二金属由Mo或CuMo制成。
作为第一金属层110的材料的Cu具有16.5×10-6/K的热膨胀系数和386W/mK的热导率。作为第二金属层120的材料的CuMo具有9×10-6/K的热膨胀系数和200W/mK的热导率。因此，通过调节第一金属层110和第二金属层120的厚度，可以将间隔件100的热膨胀系数和热导率调节为10×10-6/K以下和195W/mK以上。
间隔件100的最外层由第一金属层110(其由Cu制成)实现。在由Cu制成的第一层110上进行焊接，因此，与现有技术中的间隔件不同，不必在间隔件30的表面上形成Cu镀层33。
根据本发明的示例性实施方案，由于间隔件100的表面镀有铜层，因此第二金属层120暴露在间隔件100的侧面上。在当前情况下，由于制成第二金属层120的Mo或CuMo的焊料润湿性低于制成第一金属层110的Cu的焊料润湿性，因此在进行焊接以将间隔件100与金属板22和半导体芯片40连接时，可以防止在间隔件100的侧面上将间隔件100和金属板22相连接的焊接部分S连接至将间隔件100和半导体芯片40相连接的焊接部分S。
第二金属层120具有足够的厚度，以防止连接至设置为最上金属层的第一金属层110的焊接部分S经由第二金属层120的侧面而与连接至设置为最下金属层的第一金属层110的焊接部分S相连接。
例如，第二金属层120的厚度约占间隔件的总厚度的33％至50％。在第二金属层120的厚度小于以上建议的预定范围的情况下，存在连接至设置为最上金属层的第一金属层110的焊接部分S与连接至设置为最下金属层的第一金属层110的焊接部分S电连接从而导致短路的风险。相反地，在第二金属层120的厚度大于以上建议的预定范围的情况下，形成的第一金属层110过薄，从而不能确保间隔件所需的热膨胀系数和所需的热导率。
本发明不限于使间隔件100构造为使得以第一金属层110、第二金属层120和第一金属层110这一顺序来堆叠。如图4所示，多个第一金属层110和第二金属层120在设置为最外层的两个第一金属层110之间交替堆叠。
例如，金属层按以下顺序依次沉积在彼此的顶部：第一金属层110、第二金属层120、第一金属层110、第二金属层120和第一金属层110。即使在当前情况下，间隔件100的最外层也由第一金属层110来实现。
接下来，将参考对比示例和本发明示例来描述根据本发明示例性实施方案的间隔件上的焊接接合件。
图5A和图5B是示出了其中分别形成有间隔件和焊接接合件的对比示例和本发明示例的示意图。
图5A是示例性示出了现有技术中的间隔件30(其中设置有Cu镀层33)上的焊接接合件S的示意图，图5B是示例性示出了根据本发明示例性实施方案的间隔件100上的焊接接合件S的示意图。
如图5A所示，Cu镀层33覆盖现有技术中的间隔件30的整个表面。因此，形成在间隔件30的上表面上的焊接接合件S和形成在间隔件30的下表面上的焊接接合件S不期望地延伸到间隔件30侧面的一部分。因此，在间隔件30的上部和下部之间发生短路。
相反，在根据本发明示例性实施方案的间隔件100中，由于制成第二金属层120的金属材料具有较差的焊料润湿性，因此由图5B中理解，暴露在间隔件100的侧面上的第二金属层120防止形成在设置为最上金属层的第一金属层110上的焊接接合件S与形成在设置为最下层的第一金属层110上的焊接接合件S相连接。
为了方便解释和准确限定所附权利要求，术语“上部”、“下部”、“内部”、“外部”、“上”、“下”、“向上”、“向下”、“前面”、“后面”、“背面”、“内侧”、“外侧”、“向内”、“向外”、“内部的”、“外部的”、“内部”、“外部”、“向前”和“向后”被用于参照附图中所显示的这些特征的位置来描述示例性实施方案的特征。将进一步理解，术语“连接”或其派生词既指直接连接又指间接连接。
前面对本发明具体示例性实施方案所呈现的描述是出于说明和描述的目的。前面的描述并不旨在成为穷举的或者将本发明限制为所公开的精确形式，显然，根据上述教导，很多修改和变化都是可能的。选择示例性实施方案并进行描述是为了解释本发明的特定原理及其实际应用，从而使得本领域的其它技术人员能够实现并利用本发明的各种示例性实施方案及其各种选择形式和修改形式。本发明的范围旨在由所附权利要求书及其等价形式所限定。

Claims (13)

1.一种多层间隔件，其设置在双面冷却电源模块中的半导体芯片和基板之间，所述多层间隔件包括：
多个第一金属层，所述第一金属层由第一金属制成并且设置为最外层：以及
第二金属层，所述第二金属层由第二金属制成并且布置在多个第一金属层之间，所述第二金属的热膨胀系数低于所述第一金属的热膨胀系数。
2.根据权利要求1所述的多层间隔件，其中，将所述第二金属层设置为单个并且堆叠在设置为最外层的多个第一金属层之间。
3.根据权利要求1所述的多层间隔件，其中：
所述第二金属层设置为多个以形成多个第二金属层；
多个第二金属层交替地堆叠在设置为最外层的多个第一金属层之间。
4.根据权利要求1所述的多层间隔件，其中，所述第二金属的焊料润湿性低于所述第一金属的焊料润湿性。
5.根据权利要求1所述的多层间隔件，其中，所述第二金属层的厚度占所述多层间隔件的总厚度的33％至50％。
6.根据权利要求1所述的多层间隔件，其中，所述第一金属是Cu，所述第二金属是Mo或CuMo。
7.一种双面冷却电源模块，其包括：
上部基板；
下部基板；
半导体芯片，其设置在上部基板和下部基板之间；以及
间隔件，其设置在半导体芯片和上部基板之间，
其中，所述间隔件包括多个第一金属层以及第二金属层，所述第一金属层由第一金属制成并且设置为最外层，所述第二金属层由第二金属制成并且布置在多个第一金属层之间，所述第二金属的热膨胀系数低于所述第一金属的热膨胀系数。
8.根据权利要求7所述的双面冷却电源模块，其进一步包括：
信号引件，通过所述信号引件将信号发送至半导体芯片或者从半导体芯片接收信号；
引线，其连接半导体芯片和信号引件；以及
导电金属板，其分别设置在间隔件和上部基板之间以及半导体芯片和下部基板之间，
其中，金属板和间隔件之间的接合以及间隔件和半导体芯片之间的接合通过焊接进行。
9.根据权利要求8所述的双面冷却电源模块，其中，所述第二金属的焊料润湿性低于所述第一金属的焊料润湿性。
10.根据权利要求7所述的双面冷却电源模块，其中，将所述第二金属层设置为单个并且堆叠在设置为最外层的多个第一金属层之间。
11.根据权利要求7所述的双面冷却电源模块，其中：
所述第二金属层设置为多个以形成多个第二金属层；
多个第二金属层交替地堆叠在设置为最外层的多个第一金属层之间。
12.根据权利要求7所述的双面冷却电源模块，其中，所述第一金属是Cu，所述第二金属是Mo或CuMo。
13.根据权利要求7所述的双面冷却电源模块，其中，所述第二金属层的厚度占所述间隔件的总厚度的33％至50％。
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