CN113614073B - 聚合物、抗蚀剂组合物、形成有图案的基板的制造方法、以及(甲基)丙烯酸酯及其制造方法 - Google Patents

聚合物、抗蚀剂组合物、形成有图案的基板的制造方法、以及(甲基)丙烯酸酯及其制造方法 Download PDF

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CN113614073B
CN113614073B CN202080023085.9A CN202080023085A CN113614073B CN 113614073 B CN113614073 B CN 113614073B CN 202080023085 A CN202080023085 A CN 202080023085A CN 113614073 B CN113614073 B CN 113614073B
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CN113614073A (zh
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向井一晃
城健
加门良启
佐久间谕
安斋龙一
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Mitsubishi Chemical Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
    • C07B61/00—Other general methods
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/46—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
    • C07D333/48—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom by oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1806—C6-(meth)acrylate, e.g. (cyclo)hexyl (meth)acrylate or phenyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C08F220/382—Esters containing sulfur and containing oxygen, e.g. 2-sulfoethyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CN202080023085.9A 2019-03-27 2020-03-25 聚合物、抗蚀剂组合物、形成有图案的基板的制造方法、以及(甲基)丙烯酸酯及其制造方法 Active CN113614073B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2019-059909 2019-03-27
JP2019-059910 2019-03-27
JP2019059910 2019-03-27
JP2019-060490 2019-03-27
JP2019059909 2019-03-27
JP2019060490 2019-03-27
PCT/JP2020/013457 WO2020196667A1 (ja) 2019-03-27 2020-03-25 重合体、レジスト組成物、パターンが形成された基板の製造方法、並びに（メタ）アクリル酸エステル及びその製造方法

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CN113614073A CN113614073A (zh) 2021-11-05
CN113614073B true CN113614073B (zh) 2024-09-24

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US (2) US11845822B2 (https=)
JP (3) JPWO2020196667A1 (https=)
KR (1) KR102915541B1 (https=)
CN (1) CN113614073B (https=)
TW (2) TW202500605A (https=)
WO (1) WO2020196667A1 (https=)

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JP7546353B2 (ja) * 2019-12-11 2024-09-06 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP2022146199A (ja) * 2021-03-22 2022-10-05 三菱ケミカル株式会社 共重合体、共重合体の製造方法、レジスト組成物及び基板の製造方法
US20240175814A1 (en) * 2021-03-31 2024-05-30 Maruzen Petrochemical Co., Ltd. Method for evaluating resist polymer
CN117024402A (zh) * 2023-08-11 2023-11-10 海南百迈科医疗科技股份有限公司 一种降低α-氰基丙烯酸酯医用胶聚合热的添加剂的制备方法和应用

Citations (5)

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EP1468981A1 (en) * 2003-04-18 2004-10-20 Mitsubishi Gas Chemical Company, Inc. Production method of adamantyl acrylate compounds
WO2005111097A1 (ja) * 2004-05-18 2005-11-24 Idemitsu Kosan Co., Ltd. アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料
JP2007153763A (ja) * 2005-12-01 2007-06-21 Mitsubishi Rayon Co Ltd ３−ヒドロキシスルフォランおよびそのエステルの製造方法
CN101061434A (zh) * 2004-11-22 2007-10-24 Az电子材料美国公司 深uv用光致抗蚀剂组合物及其方法
JP2012234166A (ja) * 2011-04-19 2012-11-29 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法

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US3257319A (en) * 1963-01-21 1966-06-21 Union Carbide Corp Copolymers of 3-hydroxytetrahydrothiophene-1, 1-dioxide and their use as oil additives
JP4442845B2 (ja) 1999-11-09 2010-03-31 三菱レイヨン株式会社 レジスト用モノマーおよびその精製方法
US20080074753A1 (en) * 2005-01-12 2008-03-27 Mitsubishi Rayon Co., Ltd. Compound, Polymer and Optical Component
JP2009196844A (ja) 2008-02-20 2009-09-03 Ngk Insulators Ltd 結晶粒子の製造方法
JP5248138B2 (ja) * 2008-02-22 2013-07-31 株式会社クラレ 新規なアクリル酸エステル誘導体、およびその製造方法
JP5496715B2 (ja) * 2010-03-10 2014-05-21 株式会社クラレ アクリル酸エステル誘導体、高分子化合物およびフォトレジスト組成物
JP5655579B2 (ja) 2011-01-17 2015-01-21 Jsr株式会社 感放射線性樹脂組成物、パターン形成方法、重合体及び化合物
JP2012153662A (ja) 2011-01-27 2012-08-16 Sumitomo Chemical Co Ltd 酸発生剤用の塩、レジスト組成物及びレジストパターンの製造方法
JP2012252244A (ja) * 2011-06-06 2012-12-20 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターン製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1468981A1 (en) * 2003-04-18 2004-10-20 Mitsubishi Gas Chemical Company, Inc. Production method of adamantyl acrylate compounds
WO2005111097A1 (ja) * 2004-05-18 2005-11-24 Idemitsu Kosan Co., Ltd. アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料
CN101061434A (zh) * 2004-11-22 2007-10-24 Az电子材料美国公司 深uv用光致抗蚀剂组合物及其方法
JP2007153763A (ja) * 2005-12-01 2007-06-21 Mitsubishi Rayon Co Ltd ３−ヒドロキシスルフォランおよびそのエステルの製造方法
JP2012234166A (ja) * 2011-04-19 2012-11-29 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法

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TW202039604A (zh) 2020-11-01
US11845822B2 (en) 2023-12-19
US20240092956A1 (en) 2024-03-21
JP2024001025A (ja) 2024-01-09
KR102915541B1 (ko) 2026-01-20
TW202500605A (zh) 2025-01-01
JP7663111B2 (ja) 2025-04-16
TWI858039B (zh) 2024-10-11
JP2025102982A (ja) 2025-07-08
CN113614073A (zh) 2021-11-05
US12384863B2 (en) 2025-08-12
US20220213243A1 (en) 2022-07-07
JPWO2020196667A1 (https=) 2020-10-01
KR20210144702A (ko) 2021-11-30
WO2020196667A1 (ja) 2020-10-01

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