JPWO2020196667A1 - - Google Patents

Info

Publication number
JPWO2020196667A1
JPWO2020196667A1 JP2021509539A JP2021509539A JPWO2020196667A1 JP WO2020196667 A1 JPWO2020196667 A1 JP WO2020196667A1 JP 2021509539 A JP2021509539 A JP 2021509539A JP 2021509539 A JP2021509539 A JP 2021509539A JP WO2020196667 A1 JPWO2020196667 A1 JP WO2020196667A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021509539A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020196667A1 publication Critical patent/JPWO2020196667A1/ja
Priority to JP2023148444A priority Critical patent/JP7663111B2/ja
Priority to JP2025062634A priority patent/JP2025102982A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
    • C07B61/00—Other general methods
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/46—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
    • C07D333/48—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom by oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1806—C6-(meth)acrylate, e.g. (cyclo)hexyl (meth)acrylate or phenyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C08F220/382—Esters containing sulfur and containing oxygen, e.g. 2-sulfoethyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2021509539A 2019-03-27 2020-03-25 Pending JPWO2020196667A1 (https=)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023148444A JP7663111B2 (ja) 2019-03-27 2023-09-13 重合体、レジスト組成物、パターンが形成された基板の製造方法、並びに（メタ）アクリル酸エステル及びその製造方法
JP2025062634A JP2025102982A (ja) 2019-03-27 2025-04-04 重合体、レジスト組成物、パターンが形成された基板の製造方法、並びに（メタ）アクリル酸エステル及びその製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019059910 2019-03-27
JP2019059909 2019-03-27
JP2019060490 2019-03-27
PCT/JP2020/013457 WO2020196667A1 (ja) 2019-03-27 2020-03-25 重合体、レジスト組成物、パターンが形成された基板の製造方法、並びに（メタ）アクリル酸エステル及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023148444A Division JP7663111B2 (ja) 2019-03-27 2023-09-13 重合体、レジスト組成物、パターンが形成された基板の製造方法、並びに（メタ）アクリル酸エステル及びその製造方法

Publications (1)

Publication Number Publication Date
JPWO2020196667A1 true JPWO2020196667A1 (https=) 2020-10-01

Family

ID=72612002

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2021509539A Pending JPWO2020196667A1 (https=) 2019-03-27 2020-03-25
JP2023148444A Active JP7663111B2 (ja) 2019-03-27 2023-09-13 重合体、レジスト組成物、パターンが形成された基板の製造方法、並びに（メタ）アクリル酸エステル及びその製造方法
JP2025062634A Pending JP2025102982A (ja) 2019-03-27 2025-04-04 重合体、レジスト組成物、パターンが形成された基板の製造方法、並びに（メタ）アクリル酸エステル及びその製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2023148444A Active JP7663111B2 (ja) 2019-03-27 2023-09-13 重合体、レジスト組成物、パターンが形成された基板の製造方法、並びに（メタ）アクリル酸エステル及びその製造方法
JP2025062634A Pending JP2025102982A (ja) 2019-03-27 2025-04-04 重合体、レジスト組成物、パターンが形成された基板の製造方法、並びに（メタ）アクリル酸エステル及びその製造方法

Country Status (6)

Country Link
US (2) US11845822B2 (https=)
JP (3) JPWO2020196667A1 (https=)
KR (1) KR102915541B1 (https=)
CN (1) CN113614073B (https=)
TW (2) TW202500605A (https=)
WO (1) WO2020196667A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7546353B2 (ja) * 2019-12-11 2024-09-06 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP2022146199A (ja) * 2021-03-22 2022-10-05 三菱ケミカル株式会社 共重合体、共重合体の製造方法、レジスト組成物及び基板の製造方法
US20240175814A1 (en) * 2021-03-31 2024-05-30 Maruzen Petrochemical Co., Ltd. Method for evaluating resist polymer
CN117024402A (zh) * 2023-08-11 2023-11-10 海南百迈科医疗科技股份有限公司 一种降低α-氰基丙烯酸酯医用胶聚合热的添加剂的制备方法和应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007153763A (ja) * 2005-12-01 2007-06-21 Mitsubishi Rayon Co Ltd ３−ヒドロキシスルフォランおよびそのエステルの製造方法
JP2008521039A (ja) * 2004-11-22 2008-06-19 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション 深紫外線（ｄｅｅｐｕｖ）用のフォトレジスト組成物及びその方法
JP2012234166A (ja) * 2011-04-19 2012-11-29 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3257319A (en) * 1963-01-21 1966-06-21 Union Carbide Corp Copolymers of 3-hydroxytetrahydrothiophene-1, 1-dioxide and their use as oil additives
JP4442845B2 (ja) 1999-11-09 2010-03-31 三菱レイヨン株式会社 レジスト用モノマーおよびその精製方法
JP2004315464A (ja) 2003-04-18 2004-11-11 Mitsubishi Gas Chem Co Inc アダマンチルアクリレート類の製造方法
WO2005111097A1 (ja) 2004-05-18 2005-11-24 Idemitsu Kosan Co., Ltd. アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料
US20080074753A1 (en) * 2005-01-12 2008-03-27 Mitsubishi Rayon Co., Ltd. Compound, Polymer and Optical Component
JP2009196844A (ja) 2008-02-20 2009-09-03 Ngk Insulators Ltd 結晶粒子の製造方法
JP5248138B2 (ja) * 2008-02-22 2013-07-31 株式会社クラレ 新規なアクリル酸エステル誘導体、およびその製造方法
JP5496715B2 (ja) * 2010-03-10 2014-05-21 株式会社クラレ アクリル酸エステル誘導体、高分子化合物およびフォトレジスト組成物
JP5655579B2 (ja) 2011-01-17 2015-01-21 Jsr株式会社 感放射線性樹脂組成物、パターン形成方法、重合体及び化合物
JP2012153662A (ja) 2011-01-27 2012-08-16 Sumitomo Chemical Co Ltd 酸発生剤用の塩、レジスト組成物及びレジストパターンの製造方法
JP2012252244A (ja) * 2011-06-06 2012-12-20 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターン製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008521039A (ja) * 2004-11-22 2008-06-19 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション 深紫外線（ｄｅｅｐｕｖ）用のフォトレジスト組成物及びその方法
JP2007153763A (ja) * 2005-12-01 2007-06-21 Mitsubishi Rayon Co Ltd ３−ヒドロキシスルフォランおよびそのエステルの製造方法
JP2012234166A (ja) * 2011-04-19 2012-11-29 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法

Also Published As

Publication number Publication date
TW202039604A (zh) 2020-11-01
US11845822B2 (en) 2023-12-19
US20240092956A1 (en) 2024-03-21
JP2024001025A (ja) 2024-01-09
KR102915541B1 (ko) 2026-01-20
TW202500605A (zh) 2025-01-01
CN113614073B (zh) 2024-09-24
JP7663111B2 (ja) 2025-04-16
TWI858039B (zh) 2024-10-11
JP2025102982A (ja) 2025-07-08
CN113614073A (zh) 2021-11-05
US12384863B2 (en) 2025-08-12
US20220213243A1 (en) 2022-07-07
KR20210144702A (ko) 2021-11-30
WO2020196667A1 (ja) 2020-10-01

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