CN113563621A - 一种抗静电哑光非硅离型膜及其制备方法 - Google Patents
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Abstract
本发明公开了一种抗静电哑光非硅离型膜及其制备方法,该离型膜从下往上包括哑光PET、底涂层、抗静电层和非硅离型层;所述底涂层包括聚乙烯醇缩丁醛;所述抗静电层包括如下重量份的组分:混合溶剂500‑1000份、聚噻吩溶液100份、N,N‑二甲基甲酰胺3‑20份、抗坏血酸0‑10份、氨基酸羧酸类螯合剂0‑5份;所述非硅离型层包括如下重量份的组分:甲苯500‑1000份、酮类溶剂50‑500份、氨基改性的丙烯酸类树脂0‑300份、羟基饱和聚酯树脂0‑300份、固化剂5‑50份。
Description
技术领域
本发明属于离型膜及电子产品模切加工领域,具体涉及一种抗静电哑光非硅离型膜及其制备方法。
背景技术
离型膜是在薄膜上涂布了离型剂的膜材料,其特点是表面平整、洁净度高,后续加工尺寸稳定,透明度及颜色可调整,薄膜的厚度与基材的种类可选择的范围广,离型膜与特定的材料在有限的条件下接触后不具有粘性,或轻微的粘性。
目前离型膜市场上的产品一般是以 PET薄膜为基材,以硅油为离型剂而制备的;但随着LCD、LED、PC、手机等行业的发展,华为、苹果等众多公司要求离型膜不能含有任何硅元素,对离型膜的需求与日俱增,并且要求也越来越高;目前需要离型膜自带抗静电功能,且没有硅转移带来的风险,普通的离型膜由于自身基材是聚酯材料,属于绝缘体,在收卷和放卷过程中容易产生静电,而静电轻则会导致吸附灰尘,影响后期产品的加工质量,重则会导致与之接触的电子元器件被高压放电损坏;此外,在柔性线路板的制造和晶圆的加工等电子器件中,转移的有机硅会在后续加工或者应用时直接地影响其柔性线路板的正常使用(断路或者短路)。
发明内容
针对现有技术的不足,本发明的目的在于提供一种抗静电哑光非硅离型膜及其制备方法,解决现有技术中有硅转移、抗静电效果差等问题。
为解决现有技术问题,本发明采取的技术方案为:
第一方面,本发明提供了一种抗静电哑光非硅离型膜,从下往上包括哑光PET、底涂层、抗静电层和非硅离型层;所述底涂层包括聚乙烯醇缩丁醛;所述抗静电层包括如下重量份的组分:混合溶剂500-1000份、聚噻吩溶液100份、N,N-二甲基甲酰胺3-20份、抗坏血酸0-10份、氨基酸羧酸类螯合剂0-5份;所述非硅离型层包括如下重量份的组分:甲苯500-1000份、酮类溶剂50-500份、氨基改性的丙烯酸类树脂0-300份、羟基饱和聚酯树脂0-300份、固化剂5-50份。
结合第一方面,进一步的,底涂层的厚度为0.1-1um。
结合第一方面,进一步的,混合溶剂包括异丙醇和水,其中异丙醇和水的比例是6:4。
结合第一方面,进一步的,抗静电层的厚度为0.1-0.2um。
结合第一方面,进一步的,酮类溶剂是丁酮、环己酮中的一种或两种。
结合第一方面,进一步的,固化剂是二异氰酸酯。
第二方面,本发明还提供了一种抗静电哑光非硅离型膜的制备方法,包括如下步骤:
对哑光PET进行电晕处理,电晕参数为0.5;
在哑光PET上涂布底涂剂,得到底涂层;
在底涂层上涂布抗静电剂,烘烤得到抗静电层;
在抗静电层上涂布非硅离型剂,烘烤得到非硅离型层,熟化后得到抗静电哑光非硅离型膜。
结合第二方面,进一步的,抗静电层使用120目的微凹辊进行涂布,烘烤温度为70-160℃。
结合第二方面,进一步的,非硅离型层使用200目的微凹辊进行涂布,烘烤温度为70-160℃。
与现有技术相比,本发明的有益效果在于:
本发明提供的一种抗静电哑光非硅离型膜及其制备方法,采用哑光PET作为基材,制得的离型膜光泽度非常稳定,模切加工时能有效减少反射光;采用聚噻吩溶液配合N,N-二甲基甲酰胺、抗坏血酸、氨基酸羧酸类螯合剂、混合溶剂作为抗静电剂,制得的离型膜在剥离时消除静电的产生,抗静电效果好,也对模切加工有利;且离型层采用的是非硅离型剂,使用甲苯、酮类溶剂、氨基改性的丙烯酸类树脂、羟基饱和聚酯树脂及固化剂配置非硅离型剂,相比普通离型剂来说避免了硅转移带来的风险。
具体实施方式
下面对本发明作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案,而不能以此来限制本发明的保护范围。
实施例1
本发明提供的一种抗静电哑光非硅离型膜的制备方法,包括以下步骤:
对50um哑光PET进行电晕处理,电晕参数为0.5,在50um哑光PET上涂布聚乙烯醇缩丁醛,涂布量为0.5um,得到底涂层。
将100份聚噻吩溶液、3份N,N-二甲基甲酰胺、1份抗坏血酸、0.5份氨基酸羧酸类螯合剂、700份混合溶剂混合均匀,使用120目的微凹辊进行涂布,涂布量为0.1um,放进80℃烘箱固化至成型,得到抗静电层。
将180份氨基改性的丙烯酸类树脂、20份羟基饱和聚酯树脂、150份甲苯、450份丁酮、5份二异氰酸酯混合均匀,使用200目的微凹辊进行涂布,涂布量为0.1um,放进90℃烘箱固化至成型,再经过35℃熟化3天,得到抗静电哑光非硅离型膜。
对制得的抗静电哑光非硅离型膜进行性能测试,24小时离型力为7(gf/inch),SA为87%,阻抗值为3.7e9。
实施例2
本发明提供的一种抗静电哑光非硅离型膜的制备方法,包括以下步骤:
对50um哑光PET进行电晕处理,电晕参数为0.5,在50um哑光PET上涂布聚乙烯醇缩丁醛,涂布量为0.2um,得到底涂层。
将100份聚噻吩溶液、3份N,N-二甲基甲酰胺、1份抗坏血酸、0.5份氨基酸羧酸类螯合剂、700份混合溶剂混合均匀,使用120目的微凹辊进行涂布,涂布量为0.2um,放进80℃烘箱固化至成型,得到抗静电层。
将140份氨基改性的丙烯酸类树脂、60份羟基饱和聚酯树脂、150份甲苯、450份丁酮、5份二异氰酸酯混合均匀,使用200目的微凹辊进行涂布,涂布量为0.2um,放进90℃烘箱固化至成型,再经过35℃熟化3天,得到抗静电哑光非硅离型膜。
对制得的抗静电哑光非硅离型膜进行性能测试,24小时离型力为29.8(gf/inch),SA为83%,阻抗值为7.7e8。
实施例3
本发明提供的一种抗静电哑光非硅离型膜的制备方法,包括以下步骤:
对50um哑光PET进行电晕处理,电晕参数为0.5,在50um哑光PET上涂布聚乙烯醇缩丁醛,涂布量为0.2um,得到底涂层。
将100份聚噻吩溶液、5份N,N-二甲基甲酰胺、1.5份抗坏血酸、0.7份氨基酸羧酸类螯合剂、700份混合溶剂混合均匀,使用120目的微凹辊进行涂布,涂布量为0.1um,放进80℃烘箱固化至成型,得到抗静电层。
将140份氨基改性的丙烯酸类树脂、60份羟基饱和聚酯树脂、150份甲苯、450份丁酮、5份二异氰酸酯混合均匀,使用200目的微凹辊进行涂布,涂布量为0.1um,放进90℃烘箱固化至成型,再经过35℃熟化3天,得到抗静电哑光非硅离型膜。
对制得的抗静电哑光非硅离型膜进行性能测试,24小时离型力为20.6(gf/inch),SA为82%,阻抗值为3.3e6。
实施例4
本发明提供的一种抗静电哑光非硅离型膜的制备方法,包括以下步骤:
对50um哑光PET进行电晕处理,电晕参数为0.5,在50um哑光PET上涂布聚乙烯醇缩丁醛,涂布量为0.2um,得到底涂层。
将100份聚噻吩溶液、5份N,N-二甲基甲酰胺、1.5份抗坏血酸、0.7份氨基酸羧酸类螯合剂、700份混合溶剂混合均匀,使用120目的微凹辊进行涂布,涂布量为0.2um,放进80℃烘箱固化至成型,得到抗静电层。
将100份氨基改性的丙烯酸类树脂、100份羟基饱和聚酯树脂、150份甲苯、450份丁酮、5份二异氰酸酯混合均匀,使用200目的微凹辊进行涂布,涂布量为0.2um,放进90℃烘箱固化至成型,再经过35℃熟化3天,得到抗静电哑光非硅离型膜。
对制得的抗静电哑光非硅离型膜进行性能测试,24小时离型力为58.5(gf/inch),SA为82%,阻抗值为2.4e6。
本发明提供的一种抗静电哑光非硅离型膜,阻抗值可通过抗静电剂的配方进行调整,阻抗值范围为e4-e11,离型力可通过非硅离型剂的配方进行调整,离型力范围为5-150(gf/inch);本发明提供的一种抗静电哑光非硅离型膜的制备方法,制备过程中,张力控制系统维持在2-50kg,根据不同产品进行调整。
综上所述,本发明提供的一种抗静电哑光非硅离型膜,光泽度非常稳定,模切加工时能有效减少反射光;采用聚噻吩溶液配合N,N-二甲基甲酰胺、抗坏血酸、氨基酸羧酸类螯合剂、混合溶剂作为抗静电剂,制得的离型膜在剥离时消除静电的产生,抗静电效果好,也对模切加工有利;且离型层采用的是非硅离型剂,使用甲苯、酮类溶剂、氨基改性的丙烯酸类树脂、羟基饱和聚酯树脂及固化剂配置非硅离型剂,相比普通离型剂来说避免了硅转移带来的风险。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和变形,这些改进和变形也应视为本发明的保护范围。
Claims (9)
1.一种抗静电哑光非硅离型膜,其特征在于,从下往上包括哑光PET、底涂层、抗静电层和非硅离型层;所述底涂层包括聚乙烯醇缩丁醛;所述抗静电层包括如下重量份的组分:混合溶剂500-1000份、聚噻吩溶液100份、N,N-二甲基甲酰胺3-20份、抗坏血酸0-10份、氨基酸羧酸类螯合剂0-5份;所述非硅离型层包括如下重量份的组分:甲苯500-1000份、酮类溶剂50-500份、氨基改性的丙烯酸类树脂0-300份、羟基饱和聚酯树脂0-300份、固化剂5-50份。
2.根据权利要求1所述的一种抗静电哑光非硅离型膜,其特征在于,所述底涂层的厚度为0.1-1um。
3.根据权利要求1所述的一种抗静电哑光非硅离型膜,其特征在于,所述混合溶剂包括异丙醇和水,其中异丙醇和水的比例是6:4。
4.根据权利要求1所述的一种抗静电哑光非硅离型膜,其特征在于,所述抗静电层的厚度为0.1-0.2um。
5.根据权利要求1所述的一种抗静电哑光非硅离型膜,其特征在于,所述酮类溶剂是丁酮、环己酮中的一种或两种。
6.根据权利要求1所述的一种抗静电哑光非硅离型膜,其特征在于,所述固化剂是二异氰酸酯。
7.根据权利要求1-6任一项所述的一种抗静电哑光非硅离型膜的制备方法,其特征在于,包括如下步骤:
对哑光PET进行电晕处理,电晕参数为0.5;
在哑光PET上涂布底涂剂,得到底涂层;
在底涂层上涂布抗静电剂,烘烤得到抗静电层;
在抗静电层上涂布非硅离型剂,烘烤得到非硅离型层,熟化后得到抗静电哑光非硅离型膜。
8.根据权利要求7所述的一种抗静电哑光非硅离型膜,其特征在于,所述抗静电层使用120目的微凹辊进行涂布,烘烤温度为70-160℃。
9.根据权利要求7所述的一种抗静电哑光非硅离型膜,其特征在于,所述非硅离型层使用200目的微凹辊进行涂布,烘烤温度为70-160℃。
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