CN113529030A - Target material assembly and manufacturing method thereof - Google Patents
Target material assembly and manufacturing method thereof Download PDFInfo
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- CN113529030A CN113529030A CN202110962008.6A CN202110962008A CN113529030A CN 113529030 A CN113529030 A CN 113529030A CN 202110962008 A CN202110962008 A CN 202110962008A CN 113529030 A CN113529030 A CN 113529030A
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- back plate
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- 239000013077 target material Substances 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000004544 sputter deposition Methods 0.000 claims abstract description 42
- 238000003466 welding Methods 0.000 claims description 33
- 238000003756 stirring Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 229910000838 Al alloy Inorganic materials 0.000 claims description 8
- -1 copper-silicon-aluminum Chemical compound 0.000 claims description 5
- 229910000676 Si alloy Inorganic materials 0.000 claims description 4
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 14
- 238000001514 detection method Methods 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000005304 joining Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000001513 hot isostatic pressing Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 229910018182 Al—Cu Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000009924 canning Methods 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
- B23K20/122—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding using a non-consumable tool, e.g. friction stir welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
- B23K20/122—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding using a non-consumable tool, e.g. friction stir welding
- B23K20/1245—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding using a non-consumable tool, e.g. friction stir welding characterised by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a target material component and a manufacturing method thereof, wherein the target material component comprises: the sputtering device comprises a target and a back plate, wherein the back plate is arranged on the periphery of the target, and the sputtering surface of the target protrudes relative to the front end surface of the back plate. According to the target assembly and the manufacturing method thereof, the back plate is arranged at the periphery of the target, and the back plate does not occupy the space on the back surface of the target, so that the thickness of the sputtering range is formed by the target, the target can be indirectly set to be thicker, the service life of the target is prolonged, and compared with the conventional product, the comprehensive power can be prolonged to the end of the service life, and the service life of the target assembly is prolonged.
Description
Technical Field
The invention belongs to the technical field of semiconductor equipment, and particularly relates to a target assembly and a manufacturing method thereof.
Background
In the manufacture of semiconductors, electronic devices, and the like, aluminum alloy sputtering targets for thin film formation are used by being joined to a backing plate made of an aluminum alloy.
The sputtering target and the back plate are jointed by adopting Hot Isostatic Pressing (HIP) diffusion jointing, but the HIP diffusion jointing needs to insert jointing materials such as Ni, and the like, and the HIP diffusion jointing needs to be preprocessed such as canning, degassing and the like, so that the production efficiency is low, the cost is very high, and the service life of the sputtering target is short.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a target material assembly and a manufacturing method thereof aiming at the defects in the prior art, so that the service life of the target material assembly is greatly prolonged.
The technical scheme adopted for solving the technical problem of the invention is to provide a target material assembly, which comprises the following components: the target material and the back plate are arranged on the periphery of the target material and are jointed by a welding method, the sputtering surface of the target material protrudes relative to the front end surface of the back plate, and the sputtering surface of the target material is closer to the inside of the sputtering cavity where the target material is located.
Preferably, the target comprises: the target main part, the concave part of being connected with the target main part, the concave part sets up in the back at target edge, and the back at target edge is the one side of the sputtering face for target edge, and the backplate includes: the sputtering device comprises a back plate main body and a convex part connected with the back plate main body, wherein the convex part is arranged on the front side of the edge of the back plate, the front side of the edge of the back plate is closer to the inside of a sputtering cavity where the back plate is located relative to the back side of the edge of the back plate, and the convex part is arranged in the concave part.
Preferably, the convex portion is adapted to the shape of the concave portion.
Preferably, the protruding portion includes a first side surface facing inward, the recessed portion includes a second side surface facing outward, the first side surface and the second side surface are attached to each other, and the first side surface and the second side surface have the same length along a direction perpendicular to the axial direction of the target, the length being 0.1 to 3 mm.
Preferably, the thickness of the target is 20 to 30 mm.
Preferably, the target material is any one of pure aluminum, aluminum-copper alloy, aluminum-silicon alloy and copper-silicon-aluminum alloy;
the material of the back plate is any one of A5000 series aluminum, A6000 series aluminum and A2000 series aluminum.
Preferably, the target assembly further comprises: and the back plate is connected with the chamber wall of the sputtering chamber in which the back plate is positioned through the connecting piece.
Preferably, the target assembly further comprises: and the grounding shield is respectively in contact connection with the back plate and the target material and is connected with the sputtering cavity in which the grounding shield is positioned through the connecting piece.
Preferably, the target is thicker than the backing plate.
The invention also provides a manufacturing method of the target assembly, which comprises the following steps:
and jointing the periphery of the target material and the back plate to enable the back plate to be positioned at the periphery of the target material, offsetting the welding drill bit from the jointing center line of the periphery of the target material and the back plate to the back plate side by a preset distance, and jointing the periphery of the target material and the back plate in a welding way.
Preferably, the welding temperature is 350-550 ℃.
Preferably, the welding drill is offset from the joint center line toward the back plate side by a predetermined distance of 0.1 to 3 mm.
Preferably, the welding method for welding the target and the back plate is friction stir welding.
Preferably, the bit for welding is rotated at a speed of 1,000 to 2,500rpm at a feed rate of 50 to 300 mm/min.
According to the target assembly and the manufacturing method thereof, the back plate is arranged at the periphery of the target, and the back plate does not occupy the space on the back surface of the target, so that the thickness of the sputtering range is formed by the target, the target can be indirectly set to be thicker, the service life of the target is prolonged, and compared with the conventional product, the comprehensive power can be prolonged to the end of the service life, and the service life of the target assembly is prolonged.
Drawings
Fig. 1 is a schematic structural view of a target assembly in example 2 of the present invention;
FIG. 2 is a view showing a gap at a bonding interface where a target and a backing plate are bonded, which is detected by an ultrasonic flaw detection test in example 3 of the present invention;
fig. 3 is a schematic structural view of a target assembly in example 8 of the present invention;
fig. 4 is a schematic structural view of a target assembly in which a portion of the target is sputtered off in embodiment 8 of the present invention;
fig. 5 is a schematic structural view of a target assembly in embodiment 8 of the present invention.
In the figure: 1-a target material; 11-a target body; 12-a recess; 2-a back plate; 21-a back plate body; 22-a convex part; 3-a first side; 4-a second side; 5-sputtering off the target material; 6-a flange; 7-a first bolt; 8-a second bolt; 9-ground shield.
Detailed Description
In order to make the technical solutions of the present invention better understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Reference will now be made in detail to embodiments of the present patent, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present patent and are not to be construed as limiting the present patent.
Example 1
The present embodiments provide a target assembly, comprising: the sputtering device comprises a target and a back plate, wherein the back plate is arranged on the periphery of the target, the sputtering surface of the target protrudes relative to the front end surface of the back plate, and the sputtering surface of the target is closer to the inside of a sputtering cavity where the target is located.
The present invention further provides a method for manufacturing the target assembly, which includes the following steps:
and jointing the periphery of the target material and the back plate to enable the back plate to be positioned at the periphery of the target material, offsetting the welding drill bit from the jointing center line of the periphery of the target material and the back plate to the back plate side by a preset distance, and jointing the periphery of the target material and the back plate in a welding way.
In the target assembly and the manufacturing method thereof in the embodiment, the back plate is arranged at the periphery of the target, and the back plate does not occupy the space on the back surface of the target, and the thickness of the sputtering range is formed by the target, so that the target can be indirectly set to be thicker, the service life of the target is prolonged, and compared with the conventional product, the comprehensive power can be prolonged to the end of the service life, and the long service life of the target assembly is realized.
Example 2
As shown in fig. 1, the present embodiment provides a target assembly, comprising: the sputtering device comprises a target 1 and a back plate 2, wherein the back plate 2 is arranged on the periphery of the target 1, the target 1 is jointed with the back plate 2 through a welding method, the sputtering surface of the target 1 protrudes relative to the front end surface of the back plate 2, and the sputtering surface of the target 1 is closer to the inside of a sputtering cavity where the target 1 is located.
Since the sputtering surface of the target 1 is projected with respect to the front end surface of the backing plate 2, the plasma mainly bombards the sputtering surface of the target 1, reducing damage to the backing plate 2.
Preferably, the target 1 includes: a target body 11 and a concave portion 12 connected to the target body 11, the concave portion 12 being provided on a back surface of an edge of the target 1, the back surface of the edge of the target 1 being a surface of a sputtering surface opposite to the edge of the target 1, the backing plate 2 including: the sputtering device comprises a back plate main body 21 and a convex part 22 connected with the back plate main body 21, wherein the convex part 22 is arranged on the front surface of the edge of the back plate 2, the front surface of the edge of the back plate 2 is closer to the inside of a sputtering cavity where the back plate 2 is located relative to the back surface of the edge of the back plate 2, and the convex part 22 is arranged in the concave part 12.
Preferably, the projections 22 are form-fit to the recesses 12.
Preferably, the convex portion 22 includes a first side surface 3 facing inward, the concave portion 12 includes a second side surface 4 facing outward, the first side surface 3 and the second side surface 4 are bonded, and the length X of the first side surface 3 and the length X of the second side surface 4 along the direction perpendicular to the axial direction of the target 1 are the same, and the length X is 0.1 to 3 mm.
When the joint line of one surface of the target material 1 and the back plate 2 is welded, the weld joint at the joint line of the other surface of the target material 1 and the back plate 2 is effectively prevented from cracking.
Specifically, the length X of the first side surface 3 and the second side surface 4 in the direction perpendicular to the axial direction of the target 1 in the present embodiment is 1.5 mm.
Preferably, the thickness of the target 1 is 20 to 30 mm.
Specifically, the thickness of the target 1 in this embodiment is 30 mm.
Preferably, the target material 1 is made of any one of pure aluminum, aluminum-copper alloy, aluminum-silicon alloy and copper-silicon-aluminum alloy;
the material of the back plate 2 is any one of A5000 series aluminum, A6000 series aluminum and A2000 series aluminum.
Preferably, the thickness of the target 1 is thicker than that of the back plate 2, so that the thickness of the target 1 is increased, the service life of the target assembly is prolonged, and materials of the back plate 2 are saved.
In the thickness direction of the target 1 in the sputtering range, the material of the target 1 in this example is a copper-silicon-aluminum alloy, and the target 1 is composed of an aluminum target 1 containing Si and Cu additive elements with a purity of 4N5 or higher. The target 1 and the back plate 2 are made of different materials.
The present invention further provides a method for manufacturing the target assembly, which includes the following steps:
1) the target 1(TG) is made of Al-Cu alloy, the back plate 2(BP) is made of A6061 alloy, the target 1 and the back plate 2 are respectively fixed on a special fixture, the periphery of the target 1 is jointed with the back plate 2, the back plate 2 is positioned on the periphery of the target 1, and the seam gap between the target 1 and the back plate is adjusted to be less than 0.2 mm.
2) A drill of a Friction Stir Welding (FSW) stirring tool was aligned with the joint center line, and was shifted toward the back plate 2 side by a predetermined distance of 1mm, an insertion depth of 17mm, an inclination angle of 3 degrees, and a rotation speed of 1600 rpm. The drill bit is deviated towards the side of the back plate 2, so that the molten back plate 2 material can be reduced from entering the molten target material 1, the purity of the sputtering target material 1 is increased, and the stability of the subsequent sputtering process used by the target material 1 is improved.
3) After the FSW tool was inserted into the joint material, it was held in place for 5 seconds and the movement was initiated after the temperature of the joint to be welded exceeded 500 ℃.
4) The target 1 and the backing plate 2 were moved so that the FSW stirring tool moved at a speed of 150mm/min, and joining was started.
5) And (3) after the drill bit rotates 360 degrees from the starting point, overlapping the seam line for more than 30mm, moving to the outer side of the finished product, and pulling out the FSW stirring tool to obtain the target material assembly.
Preferably, the welding step is performed from the sputtering surface, the back surface, or both sides of the target 1.
FSW welding has the characteristics of solid-phase welding, does not need pretreatment such as canning and degassing, can be started immediately after alignment in air, and has the advantages of improving the productivity and reducing the cost by more than twice of HIP diffusion welding.
The direction of rotation of the drill bit is counterclockwise with respect to the direction of advancement of the drill bit.
After the target 1 and the backing plate 2 were joined, the front and back sides of the welded portion were cut and removed by 1.0mm, and an ultrasonic flaw detection test (C-Scan) was performed to confirm that no joining defect was detected at the FSW joint.
After the target material 1 and the back plate 2 are jointed and C-Scan, the front and back sides of the welding part are cut and removed by 1.3mm, a helium leakage test is carried out on the joint interface of the target material 1 and the back plate 2, He gas is filled in the joint interface, leakage detection is carried out, and the condition that the joint interface is 1E-10 Pa.m is confirmed3A sensitivity of not more than s, and no leak was detected.
In the target assembly and the manufacturing method thereof in the embodiment, the back plate 2 is arranged at the periphery of the target 1, and since the back plate 2 does not occupy the back of the target 1, and the thickness of the sputtering range is entirely formed by the target 1, the target 1 can be indirectly set to be thicker, the service life of the target 1 is prolonged, and therefore, compared with the conventional product, the comprehensive power can be prolonged to the end of the service life, and the long service life of the target assembly is realized.
Example 3
The present embodiment provides a target assembly, which is different from the target assembly in embodiment 2 in that:
the length X of the first side surface and the second side surface in the direction perpendicular to the axial direction of the target in this embodiment is 3 mm.
The thickness of the target in this example was 20 mm.
The present invention further provides a method for manufacturing the target assembly, which includes the following steps:
1) the Target (TG) material is Al-Cu alloy, the Back Plate (BP) material is A6061 alloy, the target and the back plate are respectively fixed on a special fixture, the periphery of the target is jointed with the back plate, the back plate is positioned at the periphery of the target, and the seam gap between the target and the back plate is adjusted to be less than 0.2 mm.
2) A drill of a Friction Stir Welding (FSW) stirring tool was aligned with the joint center line, and was shifted toward the back plate side by a predetermined distance of 1mm, an insertion depth of 17mm, an inclination angle of 3 degrees, and a rotation speed of 800 rpm.
3) After the FSW tool was inserted into the joint material, it was held in place for 5 seconds and the movement was initiated after the temperature of the joint to be welded exceeded 500 ℃.
4) The target and the backing plate were moved so that the FSW stirring tool moved at a speed corresponding to 100mm/min, and joining was started.
5) And (3) after the drill bit rotates 360 degrees from the starting point, overlapping the seam line for more than 30mm, moving to the outer side of the finished product, and pulling out the FSW stirring tool to obtain the target material assembly.
After the target and the backing plate were joined, the welded portion was cut to remove 1.0mm from the front and back surfaces, and an ultrasonic flaw detection test (C-Scan) was performed to detect a joining defect at the FSW joining portion, as shown in fig. 2.
After the target material and the back plate are jointed and C-Scan is carried out, the front and back sides of the welding position are cut and removed by 1.3mm, a helium leakage test is carried out, He gas is filled in the welding position, leakage detection is carried out, and the welding position is confirmed to be 1E-10 Pa.m3And a sensitivity of less than or equal to/s, and detecting a leak. Void defects and non-bonding defects occurred in the cross section at the leak, which is considered to be due to the low rotational speed of the drill bit.
As can be seen from fig. 2, in the helium leak test, a leak was detected, and a gap was seen at the joint interface where the target and the backing plate were welded.
Example 4
The present embodiment provides a target assembly, which is different from the target assembly in embodiment 2 in that:
the length X of the first side surface and the second side surface in the direction perpendicular to the axial direction of the target in this embodiment is 0.1 mm.
The thickness of the target in this example was 24 mm.
The present invention further provides a method for manufacturing the target assembly, which includes the following steps:
1) the Target (TG) material is Al-Cu alloy, the Back Plate (BP) material is A6061 alloy, the target and the back plate are respectively fixed on a special fixture, the periphery of the target is jointed with the back plate, the back plate is positioned at the periphery of the target, and the seam gap between the target and the back plate is adjusted to be less than 0.2 mm.
2) A drill of a Friction Stir Welding (FSW) stirring tool was aligned with the joint center line, and was shifted toward the back plate side by a predetermined distance of 1mm, an insertion depth of 17mm, an inclination angle of 3 degrees, and a rotation speed of 2000 rpm.
3) After the FSW tool was inserted into the joint material, it was held in place for 5 seconds and the movement was initiated after the temperature of the joint to be welded exceeded 500 ℃.
4) The target and the backing plate were moved so that the FSW stirring tool moved at a speed corresponding to 200mm/min, and joining was started.
5) And (3) after the drill bit rotates 360 degrees from the starting point, overlapping the seam line for more than 30mm, moving to the outer side of the finished product, and pulling out the FSW stirring tool to obtain the target material assembly.
After the target and the back plate are jointed, the front and back sides of the welded part are cut and removed by 1.0mm, and an ultrasonic flaw detection test (C-Scan) is carried out to confirm that no jointing defect is detected at the FSW joint.
After the target material and the back plate are jointed and C-Scan is carried out, the front side and the back side of the welding position are cut and removed by 1.3mm, a helium leakage test is carried out on the joint interface of the target material and the back plate, the inside of the joint interface is filled with He gas, leakage detection is carried out, and the condition that the joint interface is 1E-10 Pa.m3A sensitivity of not more than s, and no leak was detected.
Example 5
The present embodiment provides a target assembly, which is different from the target assembly in embodiment 2 in that:
the material of the target material is pure aluminum.
The backboard is made of A5000 series aluminum.
The present embodiment provides a method for manufacturing the target assembly, which is different from the method for manufacturing the target assembly in embodiment 2 in that:
and 2) aligning a drill bit of a Friction Stir Welding (FSW) stirring tool to a joint center line, and offsetting the drill bit to the back plate side by a preset distance of 0.1mm at the rotating speed of 1000 rpm.
After inserting the FSW stirring tool into the joint material in the step 3), keeping the FSW stirring tool at the position for 5 seconds, and starting to move after the temperature of the joint to be welded is 350 ℃.
And 4) moving the target and the back plate in the step 4) to enable the moving speed of the FSW stirring tool to correspond to 50mm/min, and starting to joint.
Example 6
The present embodiment provides a target assembly, which is different from the target assembly in embodiment 2 in that:
the target material is aluminum-silicon alloy.
The material of the back plate is A6000 series aluminum.
The present embodiment provides a method for manufacturing the target assembly, which is different from the method for manufacturing the target assembly in embodiment 2 in that:
and 2) aligning a drill bit of a Friction Stir Welding (FSW) stirring tool to a joint center line, and offsetting the drill bit to the back plate side by a preset distance of 3mm at the rotating speed of 2500 rpm.
After inserting the FSW stirring tool into the joint material in the step 3), the FSW stirring tool is kept at the position for 5 seconds, and the movement is started after the temperature of the joint to be welded is 400 ℃.
And 4) moving the target and the back plate in the step 4) to enable the moving speed of the FSW stirring tool to correspond to 300mm/min, and starting to joint.
Example 7
The present embodiment provides a target assembly, which is different from the target assembly in embodiment 2 in that:
the target material is copper-silicon-aluminum alloy.
The backboard is made of A2000 series aluminum.
The present embodiment provides a method for manufacturing the target assembly, which is different from the method for manufacturing the target assembly in embodiment 2 in that:
and 2) aligning a drill bit of a Friction Stir Welding (FSW) stirring tool to a joint center line, and offsetting the drill bit to the back plate side by a preset distance of 2mm at a rotating speed of 2200 rpm.
After inserting the FSW tool into the joint material in step 3), the position was held for 5 seconds and the movement was started after the temperature of the joint to be welded was 520 ℃.
And 4) moving the target and the back plate in the step 4) to enable the moving speed of the FSW stirring tool to correspond to 200mm/min, and starting to joint.
Example 8
As shown in fig. 3, the present embodiment provides a target assembly, which is different from the target assembly of embodiment 2 in that:
the target 1 does not include the convex portion 22, the backing plate 2 does not include the concave portion 12, and the periphery of the target 1 and the backing plate 2 are attached by only one curved surface.
It can be seen from fig. 4 that the sputtered target 5 and the thickness of the target 1 are significantly increased, and by arranging the back plate 2 at the periphery of the target 1, since the back plate 2 does not occupy the space at the back of the target 1, and the thickness in the sputtering range is entirely formed by the target 1, the target 1 can be indirectly set to have a thicker thickness, so that the service life of the target 1 is prolonged, and therefore, compared with the conventional product, the target assembly has the advantages that the comprehensive power can be prolonged to the end of the service life, and the long service life of the target assembly is realized.
Preferably, the target assembly further comprises: and the back plate 2 is connected with the chamber wall of the sputtering chamber in which the back plate is positioned through the connecting piece. Specifically, the connecting member in this embodiment is a flange 6.
Preferably, the target assembly further comprises: the grounding shield 9 is in contact connection with the back plate 2 and the target 1 respectively, and the grounding shield 9 is connected with the sputtering cavity where the grounding shield is located through a connecting piece.
As shown in fig. 5, in the present embodiment, specifically, the backing plate 2 in the target assembly is connected to the chamber wall of the sputtering chamber where the backing plate is located through the flange 6, the backing plate 2 is connected to the flange 6 through the first bolt 7, and the flange 6 is made of a conventional material, which does not cause a mounting problem. Specifically, the flange 6 in this embodiment is made of an aluminum alloy. The earth shield 9 is connected to the flange 6 by means of second bolts 8.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (14)
1. A target assembly, comprising: the sputtering device comprises a target and a back plate, wherein the back plate is arranged on the periphery of the target, and the sputtering surface of the target protrudes relative to the front end surface of the back plate.
2. The target assembly of claim 1, wherein the target comprises: the target main part, the concave part of being connected with the target main part, the concave part sets up in the back at target edge, and the back at target edge is the one side of the sputtering face for target edge, and the backplate includes: the sputtering device comprises a back plate main body and a convex part connected with the back plate main body, wherein the convex part is arranged on the front side of the edge of the back plate, the front side of the edge of the back plate is closer to the inside of a sputtering cavity where the back plate is located relative to the back side of the edge of the back plate, and the convex part is arranged in the concave part.
3. The target assembly of claim 2, wherein the protrusions are shaped to fit the recesses.
4. The target assembly of claim 3, wherein the protrusion comprises a first side surface facing inward, the recess comprises a second side surface facing outward, the first side surface and the second side surface are attached to each other, and the first side surface and the second side surface have the same length along a direction perpendicular to the axial direction of the target, and the length is 0.1mm to 3 mm.
5. The target assembly of any of claims 1 to 4, wherein the target has a thickness of 20 to 30 mm.
6. The target assembly according to any one of claims 1 to 4, wherein the target material is any one of pure aluminum, aluminum-copper alloy, aluminum-silicon alloy and copper-silicon-aluminum alloy;
the material of the back plate is any one of A5000 series aluminum, A6000 series aluminum and A2000 series aluminum.
7. The target assembly of any of claims 1 to 4, further comprising: and the back plate is connected with the chamber wall of the sputtering chamber in which the back plate is positioned through the connecting piece.
8. The target assembly of claim 7, further comprising: and the grounding shield is respectively in contact connection with the back plate and the target material and is connected with the sputtering cavity in which the grounding shield is positioned through the connecting piece.
9. The target assembly of any of claims 1 to 4, wherein the target has a thickness greater than a thickness of the backing plate.
10. A method for manufacturing a target assembly according to any one of claims 1 to 9, comprising the steps of:
and jointing the periphery of the target material and the back plate to enable the back plate to be positioned at the periphery of the target material, offsetting the welding drill bit from the jointing center line of the periphery of the target material and the back plate to the back plate side by a preset distance, and jointing the periphery of the target material and the back plate in a welding way.
11. The method of claim 10, wherein the welding temperature is 350-550 ℃.
12. The method of claim 10, wherein the welding drill is shifted from the joint center line toward the backing plate by a predetermined distance of 0.1 to 3 mm.
13. The method of claim 10, wherein the target and the backing plate are welded together by friction stir welding.
14. The method of manufacturing a target assembly according to any one of claims 10 to 13, wherein the rotational speed of the welding drill is 1,000 to 2,500rpm and the feed rate is 50 to 300 mm/min.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110962008.6A CN113529030A (en) | 2021-08-20 | 2021-08-20 | Target material assembly and manufacturing method thereof |
| JP2021208888A JP2023029179A (en) | 2021-08-20 | 2021-12-23 | Target assembly and method for manufacturing the same |
| KR1020210189662A KR20230028098A (en) | 2021-08-20 | 2021-12-28 | Target assembly and manufacturing method thereof |
| TW111105318A TW202309318A (en) | 2021-08-20 | 2022-02-14 | Target material assembly and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110962008.6A CN113529030A (en) | 2021-08-20 | 2021-08-20 | Target material assembly and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113529030A true CN113529030A (en) | 2021-10-22 |
Family
ID=78122699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110962008.6A Pending CN113529030A (en) | 2021-08-20 | 2021-08-20 | Target material assembly and manufacturing method thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2023029179A (en) |
| KR (1) | KR20230028098A (en) |
| CN (1) | CN113529030A (en) |
| TW (1) | TW202309318A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114273771A (en) * | 2022-01-11 | 2022-04-05 | 先导薄膜材料有限公司 | Friction welding method of target assembly |
| CN114351096A (en) * | 2022-01-26 | 2022-04-15 | 浙江最成半导体科技有限公司 | Sputtering target, target assembly and manufacturing method of target assembly |
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| US20180155821A1 (en) * | 2015-05-22 | 2018-06-07 | Ulvac, Inc. | Magnetron Sputtering Apparatus |
| CN212357372U (en) * | 2020-06-01 | 2021-01-15 | 宁波江丰电子材料股份有限公司 | Long-life sputtering target material assembly |
| CN112475796A (en) * | 2020-11-11 | 2021-03-12 | 宁波江丰电子材料股份有限公司 | Welding method of target assembly |
| CN112916996A (en) * | 2021-01-28 | 2021-06-08 | 宁波江丰电子材料股份有限公司 | Electron beam welding method for circular target and annular back plate |
| CN216192668U (en) * | 2021-08-20 | 2022-04-05 | 浙江最成半导体科技有限公司 | Target material assembly |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8702919B2 (en) * | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
-
2021
- 2021-08-20 CN CN202110962008.6A patent/CN113529030A/en active Pending
- 2021-12-23 JP JP2021208888A patent/JP2023029179A/en active Pending
- 2021-12-28 KR KR1020210189662A patent/KR20230028098A/en not_active Application Discontinuation
-
2022
- 2022-02-14 TW TW111105318A patent/TW202309318A/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180155821A1 (en) * | 2015-05-22 | 2018-06-07 | Ulvac, Inc. | Magnetron Sputtering Apparatus |
| CN212357372U (en) * | 2020-06-01 | 2021-01-15 | 宁波江丰电子材料股份有限公司 | Long-life sputtering target material assembly |
| CN112475796A (en) * | 2020-11-11 | 2021-03-12 | 宁波江丰电子材料股份有限公司 | Welding method of target assembly |
| CN112916996A (en) * | 2021-01-28 | 2021-06-08 | 宁波江丰电子材料股份有限公司 | Electron beam welding method for circular target and annular back plate |
| CN216192668U (en) * | 2021-08-20 | 2022-04-05 | 浙江最成半导体科技有限公司 | Target material assembly |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114273771A (en) * | 2022-01-11 | 2022-04-05 | 先导薄膜材料有限公司 | Friction welding method of target assembly |
| CN114273771B (en) * | 2022-01-11 | 2023-09-05 | 先导薄膜材料(安徽)有限公司 | Friction welding method for target assembly |
| CN114351096A (en) * | 2022-01-26 | 2022-04-15 | 浙江最成半导体科技有限公司 | Sputtering target, target assembly and manufacturing method of target assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230028098A (en) | 2023-02-28 |
| JP2023029179A (en) | 2023-03-03 |
| TW202309318A (en) | 2023-03-01 |
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