CN212357372U - Long-life sputtering target material assembly - Google Patents
Long-life sputtering target material assembly Download PDFInfo
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- CN212357372U CN212357372U CN202020968641.7U CN202020968641U CN212357372U CN 212357372 U CN212357372 U CN 212357372U CN 202020968641 U CN202020968641 U CN 202020968641U CN 212357372 U CN212357372 U CN 212357372U
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Abstract
The utility model relates to a long-life sputtering target component, which comprises a step-shaped target and an annular back plate; the stepped target comprises a target substrate and a bump protruding out of the sputtering surface of the target substrate, and the center of the target substrate is concentric with the center of the bump; the side wall of the target material substrate is connected with the inner wall of the annular back plate. The utility model discloses a chooseing for use cyclic annular backplate to select the target as the echelonment target, can make the whole thickness of target subassembly keep unchangeable when increasing target thickness, can guarantee the cooling effect of backplate moreover. The utility model provides a long-life target subassembly's simple structure, the processing production of being convenient for, the cost is lower.
Description
Technical Field
The utility model belongs to the technical field of magnetron sputtering, a sputter target subassembly is related to, especially relate to a long-life sputter target subassembly.
Background
The sputtering target material is one of important raw materials in the preparation process of a semiconductor integrated circuit, mainly comprises Al, Ni, Cu, Ti, W, noble metal and alloy, and is mainly used for preparing physical vapor deposition films of contacts, through holes, interconnecting wires, barrier layers, packaging and the like in the integrated circuit.
In the magnetron sputtering process, accelerated ions are used for bombarding the surface of the target material, so that atoms on the surface are deposited on the surface of the substrate. In the use process of the target, the appearance size directly influences the service life of the target, and in order to reduce the manufacturing cost of an integrated circuit and prolong the service life of the target, the production cost can be reduced and the service life of the target can be prolonged by improving the shape and the size of the target.
CN 204097558U discloses a long-life sputtering target, including sputtering face and cooling surface, the sputtering area of sputtering face thickens within 2mm on the basis of the original sputtering area of target, the thickened part is smaller than the original sputtering area of target, and the edge of the thickened part and the original sputtering area of target are in a step shape or a slope shape, the thickness of the original sputtering area is 5.8-6.2 mm. The long-life sputtering target improves the service life of the target by increasing the thickness of a sputtering area, simultaneously, the edge which does not participate in sputtering keeps the original size, the influence on the installation and the integral sputtering performance of the target is avoided, but the service life of the obtained long-life sputtering target can only reach 520kWh at most and is still low.
CN 201793723U discloses a long-life sputtering target, which comprises a sputtering surface, wherein the sputtering surface comprises two sputtering regions, namely a first sputtering region and a second sputtering region from outside to inside in sequence along a radial direction, and the second sputtering region is higher than the first sputtering region. The centers of the two sputtering regions are concentric with the center of the sputtering target. The long-life sputtering target improves the service life of the sputtering target by enabling the height of the second sputtering area to be higher than that of the first sputtering area, but the service life of the sputtering target is related to the thickness of the first sputtering area, and the effect of magnetron sputtering can be influenced by improving the service life only by increasing the thickness of the first sputtering area.
CN 201962347U discloses a long-life sputtering target assembly, which includes a target, wherein the target includes a sputtering surface and a back surface, the back surface is provided with a projection, the size of the projection is not smaller than that of a first area, and the first area is an area surrounded by an area with the fastest sputtering rate of the target; the back plate is provided with a front surface and a back surface, the front surface is provided with a groove, the size of the groove is matched with that of the target bump, and the target bump is arranged in the groove of the back plate. According to the long-life target assembly, the bump is arranged in the region where the target material is consumed quickly, so that the used amount of the whole target material in the sputtering process is increased, and the service life of the whole target material assembly is prolonged. The service life of the target is then increased only to a limited extent, and the difficulty of machining the target assembly is increased.
To the problems existing in the prior art, the target assembly which is simple in structure and convenient to machine and mold is provided, so that the service life of the target is prolonged, the utilization rate of the target can be increased, and the production cost of enterprises is reduced.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a long-life target subassembly is through selecting for use cyclic annular backplate to select the target as the echelonment target, can make the whole thickness of target subassembly remain unchanged when increasing target thickness, can guarantee the cooling effect of backplate moreover. The utility model provides a long-life target subassembly's simple structure, the processing production of being convenient for, the cost is lower.
In order to achieve the purpose of the utility model, the utility model adopts the following technical proposal:
the utility model provides a long-life target assembly, which comprises a step-shaped target and an annular back plate; the stepped target comprises a target substrate and a bump protruding out of the sputtering surface of the target substrate, and the center of the target substrate is concentric with the center of the bump; the side wall of the target material substrate is connected with the inner wall of the annular back plate.
The utility model discloses a make the backplate be annular backplate, with the interior wall connection of target and annular backplate to make the whole thickness of target subassembly remain unchanged when having realized increase target thickness, and then improved the life of target subassembly. Moreover, the utility model provides a long-life target subassembly's simple structure only can reach to be connected target and backplate through the welding, convenient operation is convenient for the popularization and application of long-life target subassembly.
"long-life" can reach more than 1400kWh for life, promptly long-life target subassembly has the life more than 1400 kWh.
Preferably, the stepped target comprises a stepped metal target or a stepped alloy target.
The step-shaped metal target comprises any one of a nickel target, a titanium target, a zinc target, a chromium target, a magnesium target, a niobium target, a tin target, an aluminum target, an indium target, an iron target, a zirconium target, a copper target, a tantalum target, a germanium target, an indium target, a cobalt target, a gold target, a rolling target, a lanthanum target, an yttrium target, a cerium target, a molybdenum target or a tungsten target.
The stepped alloy target comprises any one of an iron-cobalt target, an aluminum-silicon target, a chromium-silicon target, a zinc-aluminum target, a titanium-zinc target, a titanium-aluminum target, a titanium-zirconium target, a titanium-nickel target, a nickel-chromium target, a nickel-aluminum target or a nickel-iron target.
Preferably, the stepped target is a stepped copper target.
Preferably, the back sheet includes any one of a copper back sheet, a copper alloy back sheet, or an aluminum alloy back sheet.
The copper backplane is preferably an oxygen free copper backplane.
The copper alloy back plate comprises a copper-zinc alloy back plate or a copper-chromium alloy back plate.
Preferably, the target substrate comprises a square target substrate or a circular target substrate.
Preferably, the bumps comprise square bumps or round bumps.
Preferably, when the target substrate is a square target substrate, the bump is a square bump; when the target is a circular target substrate, the bumps are circular bumps.
Preferably, the annular back plate comprises a circular back plate or a square annular back plate.
The side wall of the target material substrate is connected with the inner wall of the annular back plate, and the connecting method is welding, preferably electron beam welding. Therefore, when the target substrate is a circular target substrate, the annular back plate is a circular back plate; when the target substrate is a square target substrate, the bump is a square bump.
Preferably, the thickness of the target substrate does not exceed the thickness of the annular backing plate.
The annular back plate is used for controlling the temperature of the target, so that the thickness of the target substrate is not more than that of the annular back plate, the maximum heat exchange area between the target and the annular back plate is ensured, and the heat exchange effect of the annular back plate is further ensured.
Preferably, the target substrate has a thickness of 7 to 9mm, for example, 7mm, 7.5mm, 8mm, 8.5mm or 9mm, but not limited to the recited values, and other values not recited within the numerical range are equally applicable.
Preferably, the thickness of the annular backing plate is 7-10mm, for example 7mm, 7.5mm, 8mm, 8.5mm, 9mm, 9.5mm or 10mm, but is not limited to the values listed, and other values not listed in the numerical range are equally applicable.
Preferably, the bumps have a thickness of 12-15mm, for example 12mm, 12.5mm, 13mm, 13.5mm, 14mm, 14.5mm or 15mm, but not limited to the values recited, and other values not recited within the range of values are equally applicable.
Preferably, the step width of the step-shaped target is 6-10mm, for example, 6mm, 6.5mm, 7mm, 7.5mm, 8mm, 8.5mm, 9mm, 9.5mm or 10mm, but not limited to the values listed, and other values not listed in the range of values are also applicable.
Compared with the prior art, the utility model discloses following beneficial effect has:
the utility model discloses a chooseing for use cyclic annular backplate to select the target as the echelonment target, can make the whole thickness of target subassembly keep unchangeable when increasing target thickness, when making the life of target subassembly improve to more than 1400kWh, can also guarantee the cooling effect of backplate. The utility model provides a long-life target subassembly's simple structure, the processing production of being convenient for, the cost is lower, and the facilitate promotion is used.
Drawings
Fig. 1 is a cross-sectional view of a long-life target assembly provided in example 1;
fig. 2 is a top view of a long life target assembly provided in example 1;
fig. 3 is a cross-sectional view of a long-life target assembly provided in example 4;
fig. 4 is a top view of a long life target assembly provided in example 4;
fig. 5 is a cross-sectional view of a long life target assembly provided in example 5;
fig. 6 is a cross-sectional view of a target assembly provided in comparative example 1.
Wherein: 1, a step-shaped target material; 2, an annular back plate; 3, copper target material; 4, oxygen free copper backplane.
Detailed Description
The technical solution of the present invention will be further explained by the following embodiments. It should be understood by those skilled in the art that the described embodiments are merely provided to assist in understanding the present invention and should not be construed as specifically limiting the present invention.
Example 1
The present embodiment provides a long-life target assembly, which is shown in fig. 1 in a cross-sectional view and fig. 2 in a top view, and includes a stepped target 1 and an annular backing plate 2.
The step-shaped target 1 is a step-shaped copper target and comprises a circular target substrate and a circular bump protruding out of the sputtering surface of the circular target substrate, and the center of the circular target substrate is concentric with the center of the circular bump; the annular back plate 2 is an annular oxygen-free copper back plate; the side wall of the circular target material substrate is connected with the inner wall of the circular oxygen-free copper back plate through electron beam welding.
The thickness of the circular target substrate is 8mm, the thickness of the circular ring oxygen-free copper back plate is 8mm, the thickness of the circular bump is 14mm, and the step width of the step-shaped copper target is 8 mm.
Example 2
The present embodiment provides a long-life target assembly, which includes a stepped target 1 and an annular backing plate 2.
The step-shaped target 1 is a step-shaped copper target and comprises a circular target substrate and a circular bump protruding out of the sputtering surface of the circular target substrate, and the center of the circular target substrate is concentric with the center of the circular bump; the annular back plate 2 is a circular CuZn alloy back plate; the side wall of the circular target substrate is connected with the inner wall of the circular CuZn alloy back plate through electron beam welding.
The thickness of the circular target substrate is 7mm, the thickness of the circular CuZn alloy back plate is 7mm, the thickness of the circular bump is 12mm, and the step width of the step-shaped molybdenum target is 6 mm.
Example 3
The present embodiment provides a long-life target assembly, which includes a stepped target 1 and an annular backing plate 2.
The step-shaped target 1 is a step-shaped copper target and comprises a circular target substrate and a circular bump protruding out of the sputtering surface of the circular target substrate, and the center of the circular target substrate is concentric with the center of the circular bump; the annular back plate 2 is a circular CuCr alloy back plate; the side wall of the circular target material substrate is connected with the inner wall of the circular CuCr alloy back plate through electron beam welding.
The thickness of the circular target substrate is 9mm, the thickness of the circular ring oxygen-free copper back plate is 9mm, the thickness of the circular bump is 15mm, and the step width of the step-shaped titanium target is 10 mm.
Example 4
The present embodiment provides a long-life target assembly, which is illustrated in a cross-sectional view in fig. 3 and a top view in fig. 4, and includes a stepped target 1 and an annular backing plate 2.
The stepped target 1 is a stepped copper target and comprises a square target substrate and a square bump protruding out of the sputtering surface of the square target substrate, and the center of the square target substrate is concentric with the center of the square bump; the annular back plate 2 is a square annular aluminum alloy back plate; the side wall of the square target material substrate is connected with the inner wall of the square annular aluminum alloy back plate through electron beam welding.
The thickness of the square target substrate is 8mm, the thickness of the square annular aluminum alloy back plate is 8mm, the thickness of the square bump is 14mm, and the step width of the step-shaped target 1 is 8 mm.
Example 5
The present embodiment provides a long life target assembly, which is shown in fig. 5 in a cross-sectional view and comprises a stepped target 1 and an annular backing plate 2.
The step-shaped target 1 is a step-shaped copper target and comprises a circular target substrate and a circular bump protruding out of the sputtering surface of the circular target substrate, and the center of the circular target substrate is concentric with the center of the circular bump; the annular back plate 2 is an annular oxygen-free copper back plate; the side wall of the circular target material substrate is connected with the inner wall of the circular oxygen-free copper back plate through electron beam welding.
The thickness of the circular target substrate is 8mm, the thickness of the circular ring oxygen-free copper back plate is 10mm, the thickness of the circular bump is 14mm, and the step width of the step-shaped copper target is 8 mm.
Comparative example 1
The comparative example provides a target assembly, a cross-sectional view of which is shown in fig. 6, and which includes a copper target 3 and an oxygen-free copper back plate 4 disposed at the bottom of the copper target 3, the copper target 3 having a thickness of 14mm, and the oxygen-free copper back plate 4 having a thickness of 10 mm.
The lifetime of the long-life target assemblies provided in examples 1-5 and the lifetime of the target assembly provided in comparative example 1 were measured using the method disclosed in CN 103572222 a, defining a standard residual thickness of 1.5mm, and the lifetime results are shown in table 1.
TABLE 1
| Life (kWh) | |
| Example 1 | 1523 |
| Example 2 | 1458 |
| Example 3 | 1621 |
| Example 4 | 1614 |
| Example 5 | 1580 |
| Comparative example 1 | 857 |
According to table 1, the utility model provides a long-life target subassembly is through chooseing for use cyclic annular backplate to select target as echelonment target 1, can make the whole thickness of target subassembly remain unchanged when increasing target thickness, can guarantee the cooling effect of backplate moreover, make final target subassembly's life improve to 1621 kWh.
To sum up, the utility model discloses a choose for use cyclic annular backplate to select target as echelonment target 1, can make the whole thickness of target subassembly keep unchangeable when increasing target thickness, when making the life of target subassembly improve to more than 1400kWh, can also guarantee the cooling effect of backplate. The utility model provides a long-life target subassembly's simple structure, the processing production of being convenient for, the cost is lower, and the facilitate promotion is used.
The applicant states that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and those skilled in the art should understand that any changes or substitutions easily conceivable by those skilled in the art within the technical scope of the present invention are within the protection scope and the disclosure scope of the present invention.
Claims (11)
1. A long-life sputtering target assembly is characterized by comprising a step-shaped target and an annular back plate;
the stepped target comprises a target substrate and a bump protruding out of the sputtering surface of the target substrate, and the center of the target substrate is concentric with the center of the bump; the side wall of the target material substrate is connected with the inner wall of the annular back plate.
2. The long life sputter target assembly of claim 1, wherein said stepped target comprises a stepped metal target or a stepped alloy target.
3. The long life sputtering target assembly of claim 1, wherein said backing plate comprises any one of a copper backing plate, a copper alloy backing plate, or an aluminum alloy backing plate.
4. The long life sputtering target assembly according to claim 2 or 3, wherein said target substrate comprises a square target substrate or a circular target substrate.
5. The long life sputter target assembly of claim 4, wherein said bumps comprise square bumps or round bumps.
6. The long life sputtering target assembly of claim 4, wherein said annular backing plate comprises a circular ring backing plate or a square ring backing plate.
7. The long life sputtering target assembly of claim 6, wherein said target substrate has a thickness not exceeding the thickness of the annular backing plate.
8. The long life sputtering target assembly of claim 7, wherein said target substrate has a thickness of 7-9 mm.
9. The long life sputter target assembly of claim 8, wherein said annular backing plate has a thickness of 7-10 mm.
10. The long life sputter target assembly of claim 8, wherein said bump has a thickness of 12-15 mm.
11. The long life sputtering target assembly according to any of claims 8 to 10, wherein said stepped target has a step width of 6 to 10 mm.
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| CN202020968641.7U CN212357372U (en) | 2020-06-01 | 2020-06-01 | Long-life sputtering target material assembly |
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| CN202020968641.7U CN212357372U (en) | 2020-06-01 | 2020-06-01 | Long-life sputtering target material assembly |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113529030A (en) * | 2021-08-20 | 2021-10-22 | 浙江最成半导体科技有限公司 | Target material assembly and manufacturing method thereof |
| CN114351096A (en) * | 2022-01-26 | 2022-04-15 | 浙江最成半导体科技有限公司 | Sputtering target, target assembly and manufacturing method of target assembly |
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2020
- 2020-06-01 CN CN202020968641.7U patent/CN212357372U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113529030A (en) * | 2021-08-20 | 2021-10-22 | 浙江最成半导体科技有限公司 | Target material assembly and manufacturing method thereof |
| CN114351096A (en) * | 2022-01-26 | 2022-04-15 | 浙江最成半导体科技有限公司 | Sputtering target, target assembly and manufacturing method of target assembly |
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