CN113383389A - 一种存储器及电子设备 - Google Patents

一种存储器及电子设备 Download PDF

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Publication number
CN113383389A
CN113383389A CN201980090877.5A CN201980090877A CN113383389A CN 113383389 A CN113383389 A CN 113383389A CN 201980090877 A CN201980090877 A CN 201980090877A CN 113383389 A CN113383389 A CN 113383389A
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CN
China
Prior art keywords
transistor
memory
transistors
memory cell
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980090877.5A
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English (en)
Inventor
潘越
刘燕翔
斯蒂芬.巴德尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN113383389A publication Critical patent/CN113383389A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

本申请提供一种存储器及电子设备，该存储器包括存储单元(10)、第一晶体管(21)、第二晶体管(22)，第一位线(BLA)，第二位线(BLB)，其中，所述存储单元(10)通过所述第一晶体管(21)和所述第二晶体管(22)被分别耦合至所述第一位线(BLA)和第二位线(BLB)，所述第一晶体管(21)和第二晶体管(22)在写操作时导通。在采用上述方案时，相对于通过一个晶体管来提供需要的写入电流，通过两个晶体管来提供写入电流，可以使得更小的晶体管就能满足需求，降低了整个存储器需要的面积。同时，本申请的存储器照样能在读操作中支持双端口的特性。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN201980090877.5A 2019-01-30 2019-01-30 一种存储器及电子设备 Pending CN113383389A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/074012 WO2020154988A1 (zh) 2019-01-30 2019-01-30 一种存储器及电子设备

Publications (1)

Publication Number Publication Date
CN113383389A true CN113383389A (zh) 2021-09-10

Family

ID=71840676

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980090877.5A Pending CN113383389A (zh) 2019-01-30 2019-01-30 一种存储器及电子设备

Country Status (4)

Country Link
US (1) US20210358531A1 (zh)
EP (1) EP3910634A4 (zh)
CN (1) CN113383389A (zh)
WO (1) WO2020154988A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103854693A (zh) * 2012-11-29 2014-06-11 台湾积体电路制造股份有限公司 磁阻式随机存取存储器（mram）差分位单元及其使用方法
CN105580083A (zh) * 2013-09-30 2016-05-11 高通股份有限公司 基于电阻的具有多条源线的存储器单元
US20160343436A1 (en) * 2015-05-19 2016-11-24 Freescale Semiconductor, Inc. Systems and methods for sram with backup non-volatile memory that includes mtj resistive elements
CN107134291A (zh) * 2016-02-29 2017-09-05 恩智浦美国有限公司 磁性随机存取存储器（mram）和操作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4047615B2 (ja) * 2002-04-03 2008-02-13 株式会社ルネサステクノロジ 磁気記憶装置
US7184301B2 (en) * 2002-11-27 2007-02-27 Nec Corporation Magnetic memory cell and magnetic random access memory using the same
FR2867300B1 (fr) * 2004-03-05 2006-04-28 Commissariat Energie Atomique Memoire vive magnetoresistive a haute densite de courant
US8009466B2 (en) * 2007-02-21 2011-08-30 Nec Corporation Semiconductor storage device
US7742328B2 (en) * 2007-06-15 2010-06-22 Grandis, Inc. Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors
JP5846124B2 (ja) * 2010-12-14 2016-01-20 日本電気株式会社 半導体記憶装置
US9064589B2 (en) * 2011-11-09 2015-06-23 Qualcomm Incorporated Three port MTJ structure and integration
JP6218353B2 (ja) * 2011-12-16 2017-10-25 凸版印刷株式会社 不揮発性デュアルポートメモリ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103854693A (zh) * 2012-11-29 2014-06-11 台湾积体电路制造股份有限公司 磁阻式随机存取存储器（mram）差分位单元及其使用方法
CN105580083A (zh) * 2013-09-30 2016-05-11 高通股份有限公司 基于电阻的具有多条源线的存储器单元
US20160343436A1 (en) * 2015-05-19 2016-11-24 Freescale Semiconductor, Inc. Systems and methods for sram with backup non-volatile memory that includes mtj resistive elements
CN107134291A (zh) * 2016-02-29 2017-09-05 恩智浦美国有限公司 磁性随机存取存储器（mram）和操作方法

Also Published As

Publication number Publication date
EP3910634A1 (en) 2021-11-17
WO2020154988A1 (zh) 2020-08-06
US20210358531A1 (en) 2021-11-18
EP3910634A4 (en) 2022-01-05

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