CN113330580A - 压接型半导体装置 - Google Patents
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Abstract
本发明的目的在于提高压接型半导体装置的制造性。本发明的压接型半导体装置具有:半导体芯片(3),其具有第1主面以及与第1主面相对的面即第2主面,在第1主面具有保护环和栅极信号输入输出部;第1外部电极(1),其形成于半导体芯片(3)的第1主面侧;导通图案(12),其形成于第1外部电极(1)之上;触针(10),其将栅极信号输入输出部与导通图案(12)进行连接;板状电极(4),其设置于半导体芯片(3)的第2主面之上;碟形弹簧(7),其设置于板状电极(4)之上;以及第2外部电极(8),其设置于碟形弹簧(7)之上,与第1外部电极(1)一起夹着半导体芯片(3)。
Description
技术领域
本发明涉及通过一对电极对半导体元件进行加压保持的压接型半导体装置。
背景技术
压接型半导体装置具有半导体元件、对半导体元件进行加压保持的一对电极、对半导体元件进行压接的碟形弹簧。与半导体元件的一个面相对的电极的接触面直径小于半导体元件的斜面部。在该电极处,在其中央部设置有供导电管穿过的孔,导电管与半导体元件的栅极信号输入输出部接触,从而能够实现半导体元件与外部电极之间的信号的收发(例如参照专利文献1)。
专利文献1:日本特开昭58-54643号公报
发明内容
以往的压接型半导体装置在半导体元件的具有栅极信号输入输出部的面设置碟形弹簧,因此,存在构造变得复杂,制造性差这样的问题。本发明就是为了解决上述问题而提出的,其目的在于提高压接型半导体装置的制造性。
本发明的压接型半导体装置具有:半导体芯片,其具有第1主面以及与第1主面相对的面即第2主面,在第1主面具有保护环和栅极信号输入输出部;第1外部电极,其形成于半导体芯片的第1主面侧;导通图案,其形成于第1外部电极之上;触针,其将栅极信号输入输出部与导通图案进行连接;板状电极,其设置于半导体芯片的第2主面之上;碟形弹簧,其设置于板状电极之上;以及第2外部电极,其设置于碟形弹簧之上,与第1外部电极一起夹着半导体芯片。
发明的效果
就本发明的半导体装置而言,在半导体芯片的与具有栅极信号输入输出面的第1主面相反侧的第2主面侧设置碟形弹簧,因此,制造性提高。本发明的目的、特征、方案以及优点通过以下的详细说明和附图变得更清楚。
附图说明
图1是实施方式1的压接型半导体装置的剖视图。
图2是实施方式1的压接型半导体装置的斜视图。
图3是实施方式2的压接型半导体装置的剖视图。
图4是实施方式2的压接型半导体装置的斜视图。
图5是实施方式3的压接型半导体装置的剖视图。
图6是实施方式3的压接型半导体装置的斜视图。
图7是实施方式4的压接型半导体装置的剖视图。
图8是实施方式4的压接型半导体装置的斜视图。
具体实施方式
<A.实施方式1>
图1是实施方式1的压接型半导体装置101的剖视图,图2是压接型半导体装置101的斜视图。此外,在图2中,外部电极8和框体9省略图示。
压接型半导体装置101具有外部电极1、电极块2、半导体芯片3、板状电极4、支撑电极5、垫圈6、碟形弹簧7、外部电极8、框体9、触针10、绝缘基板11以及导通图案12。在图1、2中,示出了1个半导体芯片3,但这是为了使说明变得容易,也可以同时压接多个半导体芯片。
在外部电极1的上表面接合电极块2。在电极块2之上搭载半导体芯片3。将与电极块2接触的半导体芯片3的下表面称为第1主面,将与第1主面相对的半导体芯片3的上表面称为第2主面。半导体芯片3的下表面是保护环面。在半导体芯片3的上表面配置板状电极4。板状电极4的下表面的面积是与半导体芯片3的上表面的尺寸相匹配的面积。在板状电极4之上,在俯视观察时与半导体芯片3重叠的位置处配置圆柱状的支撑电极5。支撑电极5具有对碟形弹簧7进行支撑的作用。
碟形弹簧7被支撑电极5支撑而配置于板状电极4之上。在碟形弹簧7的两端配置垫圈6。在配置于碟形弹簧7之上的垫圈6之上配置外部电极8。外部电极8通过框体9而与外部电极1连结。由此,半导体芯片3被从上下方向由外部电极8和外部电极1压接而固定。
板状电极4与支撑电极5也可以是一体的。另外,也可以在半导体芯片3与电极块2之间、或者半导体芯片3与板状电极4之间插入有降低接触电阻的导电性材料。另外,半导体芯片3可以是Si制的IGBT或者MOSFET,也可以是使用了SiC等宽带隙半导体的SiC-MOSFET或者SiC-IGBT。作为宽带隙半导体,除了SiC以外,还能够使用氮化镓类材料或者金刚石等。
半导体芯片3的下表面除了保护环以外还具有栅极信号输入输出部。即,在半导体芯片3的下表面配置栅极信号用的配线。栅极信号输入输出部经由具有弹性的触针10而与绝缘基板11之上的导通图案12接触。由此,实现半导体芯片3的栅极信号的输入输出。在图1中,半导体芯片3的下表面的与触针10接触的部分相当于栅极信号输入输出部。在图1中,栅极信号输入输出部形成于半导体芯片3的下表面的中央部。
如以上所说明的这样,实施方式1的压接型半导体装置101具有:半导体芯片3,其具有第1主面以及与第1主面相对的面即第2主面,在第1主面具有保护环和栅极信号输入输出部;第1外部电极1,其形成于半导体芯片3的第1主面侧;导通图案12,其形成于第1外部电极1之上;触针10,其将栅极信号输入输出部与导通图案12进行连接;板状电极4,其设置于半导体芯片3的第2主面之上;碟形弹簧7,其设置于板状电极4之上;以及第2外部电极8,其设置于碟形弹簧7之上,与第1外部电极1一起夹着半导体芯片3。从半导体芯片3的下表面进行栅极配线的引出,与此相对,碟形弹簧7配置于半导体芯片3的上表面侧。栅极信号输入输出部与碟形弹簧7以半导体芯片3为界而分离,因此能够防止混合接触。由此,组装性提高,配线设计变得容易。
另外,碟形弹簧7配置于半导体芯片3的与具有保护环的下表面相反的上表面侧。假设,在将碟形弹簧7配置于半导体芯片3的具有保护环的下表面侧的情况下,就IGBT或者MOSFET而言,从绝缘的角度出发只能以除了保护环以外的面积进行压接,因此,只能配置与该面积相匹配的大小的碟形弹簧。与此相对,就压接型半导体装置101而言,能够不受由保护环和栅极信号输入输出部带来的限制地配置与半导体芯片3的面积相匹配的大小的碟形弹簧7。
另外,由于栅极信号输入输出部与外部电极1之间的距离近,因此,能够缩短高度方向的配线长度,将配线电感抑制为最小限度,并且,栅极信号向外部的引出变得容易。在使用多个半导体的半导体装置的情况下,该效果更大。
<B.实施方式2>
图3是实施方式2的压接型半导体装置102的剖视图,图4是压接型半导体装置102的斜视图。此外,在图4中,外部电极8和框体9省略图示。
就实施方式1的压接型半导体装置101而言,栅极信号输入输出部设置于半导体芯片3的下表面的中央部,但就压接型半导体装置102而言,栅极信号输入输出部设置于半导体芯片3的第1主面即下表面的端部。除此以外的压接型半导体装置102的结构与压接型半导体装置101相同。通过将栅极信号输入输出部设置于半导体芯片3的下表面的端部,从而如图4所示在排列多个半导体芯片3而使用时,容易将各栅极信号输入输出部连接于共通的导通图案12。
<C.实施方式3>
图5是实施方式3的压接型半导体装置103的剖视图,图6是压接型半导体装置103的斜视图。此外,在图6中,外部电极8和框体9省略图示。压接型半导体装置103与实施方式2的压接型半导体装置102相比较,具有板状电极41而取代板状电极4。
板状电极41的主面的面积大于与板状电极41接触的半导体芯片3的第2主面即上表面的面积。由此,如图5及图6所示,也可以在相邻的多个半导体芯片3间共用板状电极41。板状电极41的主面的面积大于半导体芯片3的上表面的面积,由此得到高的散热性。
<D.实施方式4>
图7是实施方式4的压接型半导体装置104的剖视图,图8是压接型半导体装置104的斜视图。此外,在图8中,外部电极8和框体9省略图示。在实施方式3的压接型半导体装置103的结构的基础上,压接型半导体装置104还具有连结部件13。连结部件13以例如铝、铜、银、金或者钼等导热率高的材料为主材料,将同电位的外部电极8与板状电极4之间连接。通过连结部件13,能够将从半导体芯片3产生的热传导至外部电极1,从外部电极1高效地进行散热。
此外,本发明能够在其发明的范围内,对各实施方式自由地进行组合,或者对各实施方式适当进行变形、省略。对于本发明进行了详细说明,但上述说明在所有方面均为例示,本发明不限定于此。可以理解为在不脱离本发明的范围的情况下能够想到未例示出的无数的变形例。
标号的说明
1、8外部电极,2电极块,3半导体芯片,4、41板状电极,5支撑电极,6垫圈,7碟形弹簧,9框体,10触针,11绝缘基板,12导通图案,13连结部件,101-104压接型半导体装置。
Claims (5)
1.一种压接型半导体装置(101),其具有:
半导体芯片(3),其具有第1主面以及与所述第1主面相对的面即第2主面,在所述第1主面具有保护环和栅极信号输入输出部;
第1外部电极(1),其形成于所述半导体芯片(3)的所述第1主面侧;
导通图案(12),其形成于所述第1外部电极(1)之上;
触针(10),其将所述栅极信号输入输出部与所述导通图案(12)进行连接;
板状电极(4),其设置于所述半导体芯片(3)的所述第2主面之上;
碟形弹簧(7),其设置于所述板状电极(4)之上;以及
第2外部电极(8),其设置于所述碟形弹簧(7)之上,与所述第1外部电极(1)一起夹着所述半导体芯片(3)。
2.根据权利要求1所述的压接型半导体装置(102),其中,
所述栅极信号输入输出部设置于所述半导体芯片(3)的所述第1主面的端部。
3.根据权利要求1或2所述的压接型半导体装置(103),其中,
所述板状电极(41)的主面的面积大于所述半导体芯片(3)的所述第2主面的面积。
4.根据权利要求1至3中任一项所述的压接型半导体装置(104),其中,
还具有将所述板状电极(4)与所述第2外部电极(8)进行连接的连结部件(13),
所述连结部件以铝、铜、银、金或者钼为主材料。
5.根据权利要求1至4中任一项所述的压接型半导体装置,其中,
所述半导体芯片(3)是使用了宽带隙半导体的半导体芯片。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5854643A (ja) * | 1981-09-28 | 1983-03-31 | Hitachi Ltd | 半導体装置 |
JPH06232303A (ja) * | 1993-02-05 | 1994-08-19 | Fuji Electric Co Ltd | 電力用半導体素子 |
JP2001230373A (ja) * | 2000-02-18 | 2001-08-24 | Hitachi Ltd | 平型半導体装置及びこれを用いた電力変換器 |
CN103168356A (zh) * | 2011-10-13 | 2013-06-19 | 丰田自动车株式会社 | 半导体模块 |
CN104253119A (zh) * | 2014-07-21 | 2014-12-31 | 襄阳茂晟源电子科技有限公司 | 一种电力半导体压接式绝缘型模块 |
EP3168873A1 (en) * | 2015-11-11 | 2017-05-17 | ABB Technology AG | Power semiconductor module |
CN107533983A (zh) * | 2015-05-26 | 2018-01-02 | 三菱电机株式会社 | 压接型半导体装置 |
CN108713250A (zh) * | 2016-03-03 | 2018-10-26 | 三菱电机株式会社 | 电力用半导体装置及电力用半导体核心模块 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05218397A (ja) * | 1992-01-31 | 1993-08-27 | Meidensha Corp | 圧接型半導体素子 |
JPH09312305A (ja) * | 1996-05-21 | 1997-12-02 | Hitachi Ltd | 半導体装置及び圧接型半導体装置 |
JPH10335579A (ja) | 1997-05-27 | 1998-12-18 | Toshiba Corp | 大電力半導体モジュール装置 |
JP3516844B2 (ja) * | 1997-08-08 | 2004-04-05 | 三菱電機株式会社 | 圧接型半導体装置 |
JP5218397B2 (ja) | 2007-03-19 | 2013-06-26 | コニカミノルタエムジー株式会社 | 蛍光性材料製膜装置 |
JP5665452B2 (ja) * | 2010-09-22 | 2015-02-04 | 三菱電機株式会社 | 圧接型gtoサイリスタ |
JP6232303B2 (ja) | 2014-01-31 | 2017-11-15 | 株式会社日立製作所 | 情報処理装置 |
CN110268522B (zh) | 2017-02-01 | 2024-01-16 | 日立能源有限公司 | 具有主动短路故障模式的功率半导体装置 |
-
2019
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- 2019-01-23 US US17/293,579 patent/US20220005783A1/en active Pending
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5854643A (ja) * | 1981-09-28 | 1983-03-31 | Hitachi Ltd | 半導体装置 |
JPH06232303A (ja) * | 1993-02-05 | 1994-08-19 | Fuji Electric Co Ltd | 電力用半導体素子 |
JP2001230373A (ja) * | 2000-02-18 | 2001-08-24 | Hitachi Ltd | 平型半導体装置及びこれを用いた電力変換器 |
CN103168356A (zh) * | 2011-10-13 | 2013-06-19 | 丰田自动车株式会社 | 半导体模块 |
CN104253119A (zh) * | 2014-07-21 | 2014-12-31 | 襄阳茂晟源电子科技有限公司 | 一种电力半导体压接式绝缘型模块 |
CN107533983A (zh) * | 2015-05-26 | 2018-01-02 | 三菱电机株式会社 | 压接型半导体装置 |
EP3168873A1 (en) * | 2015-11-11 | 2017-05-17 | ABB Technology AG | Power semiconductor module |
CN108713250A (zh) * | 2016-03-03 | 2018-10-26 | 三菱电机株式会社 | 电力用半导体装置及电力用半导体核心模块 |
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US20220005783A1 (en) | 2022-01-06 |
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