CN1133212C - 高频用半导体封装体 - Google Patents

高频用半导体封装体 Download PDF

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Publication number
CN1133212C
CN1133212C CN99127064A CN99127064A CN1133212C CN 1133212 C CN1133212 C CN 1133212C CN 99127064 A CN99127064 A CN 99127064A CN 99127064 A CN99127064 A CN 99127064A CN 1133212 C CN1133212 C CN 1133212C
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semiconductor element
mentioned
ground plane
earthy
packaging body
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Expired - Fee Related
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CN99127064A
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CN1274172A (zh
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宫胁胜己
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

可得到这样一种高频用半导体封装体，它能以非常短的距离来连接半导体元件正下方的接地区域与在封装体的接地面上被键合了引线的区域，能将成为高频特性恶化的原因的电感分量抑制得非常低。在半导体元件2的外侧以虚线状配置狭缝10，使得接合材料6的流出不会导致引线键合的断开。

Description

高频用半导体封装体
技术领域
本发明涉及一种安装了在高频下工作的半导体元件的、低成本的及低损耗的封装体。
背景技术
在半导体器件中，在工作频率变高的情况下，为了使半导体元件正常地工作，与封装体的接地面(以下，简称为「PKG-GND面」)的接合、此外，封装体(以下，简称为「PKG」)本身的接地(以下，简称为「GND」)结构变得非常重要。迄今，从半导体元件的成为GND的部分开始，向正下方开出称为通路孔的孔，以最短的距离接合到PKG-GND上，或为了使GND面稳定，使用金属PKG(特别是GND面)作为PKG。
但是，最近在这些以高速工作的器件中，存在低价格化的趋势，对上述示出的那样的半导体元件应用通路孔或金属PKG变得困难，代之以朝着由键合引线得到的GND导通、陶瓷基座PKG的方向变化。其中，如果工作频率超过1GHz以上，则由于键合引线本身或PKG-GND面的配置，GND本身会具有L分量(电感分量)，成为特性恶化的原因。
在此，在图6中示出现有的PKG结构。在图6中，1是陶瓷PKG，2是半导体元件，3是使外部电路与半导体元件导电性地导通的内引线布线，4是金线，5是在陶瓷上进行了金属化的GND区域，6是将半导体元件2连接到PKG1上用的接合材料，7是在将半导体元件2的GND端子通过金线4以引线键合的方式接合到PKG的GND区域5上时防止半导体元件的接合材料的流动用的焊锡流动阻挡区(去掉金属化部分的图形)，在其外侧进行了引线键合。此外，图7是该PKG的剖面图。
上述那样的现有的高频用半导体封装体存在下述问题：从半导体元件2到GND金属化部分5之间及从键合引线到半导体元件2正下方的GND面为止，存在如图8中示出的箭头那样的距离，该距离成为L分量(电感分量)，半导体元件2的特性(特别是增益)下降。
本发明是为了解决这样的问题而进行的，本发明的目的是提供这样一种高频用半导体封装体，其中，键合到GND上的引线能以非常短的距离来接合半导体元件上的GND与PKG-GND面，此外，能以非常短的距离来连接半导体元件正下方的GND区域与键合到PKG-GND面上的区域，能将成为高频特性恶化的原因的电感分量抑制得非常低。
与本发明的第1方面有关的高频用半导体封装体中，利用接地用引线来连接半导体元件上的接地用电极与封装体的接地面，在上述封装体的接地面上以虚线状设置了去掉电镀层的狭缝状的区域，上述半导体元件的安装面是接地面。
此外，与本发明的第2方面有关的高频用半导体封装体中，封装体上的虚线状的去掉电镀层的狭缝状的区域防止因半导体元件安装时的接合材料的挤出引起的引线断开，此外，上述半导体元件正下方的接地区域与上述接地用引线的上述封装体的接地区域之间的距离变得非常短。
此外，与本发明的第3方面有关的高频用半导体封装体中，利用接地用引线来连接半导体元件上的接地用电极与封装体的接地面，在上述封装体一侧的接地面上具备介入了导电性粘接剂的金属板，使得连接半导体元件上的接地用电极与封装体的接地面的接地用引线能接合到上述板上，上述半导体元件的安装面是接地面。
此外，与本发明的第4方面有关的高频用半导体封装体中，金属板防止因半导体元件安装时的接合材料的挤出引起的引线断开，此外，上述半导体元件正下方的接地区域与上述接地用引线的上述封装体的接地区域之间的距离变得非常短。
此外，与本发明的第5方面有关的高频用半导体封装体中，利用接地用引线来连接半导体元件上的接地用电极与封装体的接地面，在上述封装体一侧的接地面上设有横长的长方形形状的电介质，使得连接半导体元件上的接地用电极与封装体的接地面的接地用引线能接合到上述电介质的外侧、即与上述半导体元件相反的一侧，上述半导体元件的安装面是接地面。
此外，与本发明的第6方面有关的高频用半导体封装体中，横长的长方形形状的电介质防止因半导体元件安装时的接合材料的挤出引起的引线断开，此外，上述半导体元件正下方的接地区域与上述接地用电极的上述封装体的接地区域之间的距离变得非常短。
图1是示出本发明的实施例1中的高频用半导体封装体的斜视图。
图2是示出本发明的实施例1中的高频用半导体封装体中的电流的流动的斜视图。
图3是示出本发明的实施例2中的高频用半导体封装体的斜视图。
图4是示出本发明的实施例3中的高频用半导体封装体的斜视图。
图5是示出本发明的实施例3中的高频用半导体封装体的剖面图。
图6是示出现有的高频用半导体封装体的斜视图。
图7是现有的高频用半导体封装体的剖面图。
图8是示出现有的高频用半导体封装体中的电流的流动的斜视图。
具体实施方式
以下，使用图1至图5说明本发明的实施例。
实施例1
首先，使用图1和图2，说明本发明的实施例1。
图1是示出本发明的实施例1中的高频用半导体封装体的斜视图。参照图1，1是陶瓷PKG，2是5.0GHz以上工作的GaAs-MMIC等的半导体元件，2a是半导体元件2上的接地用电极，3是使外部电路与半导体元件导电性地导通的内引线布线，4是作为接地用引线的金线，5是在陶瓷上进行了金属化的、作为封装体的接地面的GND区域，6是将半导体元件2连接到PKG1上用的接合材料，10是以虚线状配置的狭缝，其作用是在以引线键合方式通过金线4将半导体元件2的GND端子接合到PKG的GND区域5上时，使接合材料6的流出不会导致该引线键合的断开，该狭缝10是去掉GND面5的电镀层的狭缝，该一个狭缝的大致尺寸是，长度约0.3mm×宽度约0.15mm，该狭缝由陶瓷、或焊锡不流动的金属来覆盖。
如以上所说明的那样，按照本实施例1中的高频用半导体封装体，由于以虚线状来配置狭缝以使接合材料6的流出不会导致引线键合的断开，故键合到GND上的引线能以非常短的距离来接合半导体元件上的GND与PKG-GND面5，此外，如图2的箭头所示那样，能以非常短的距离来连接半导体元件2正下方的GND区域与被键合到PKG-GND面5上的区域，能将成为高频特性恶化的原因的电感分量抑制到非常低。
实施例2
本实施例2的目的与上述实施例1的目的相同，如图3中所示那样，用焊锡或导电性树脂使金属板20接合到半导体元件2的两端，在该金属板20上进行了半导体元件2上的GND键合。该金属板20的材料是Fe-Ni-Co合金或Cu材，其最终表面处理必须进行Au蒸镀或Au电镀。此外，该金属板20的大致尺寸是，宽度约0.3mm×长度约2.5mm×高度约0.2mm，由此，由于可防止半导体元件2的焊锡流动，同时被键合引线的金属板20能从半导体元件2开始以非常短的距离、且以使电感分量显著降低的方式连接到PKG-GND面上，故可防止特性恶化。
实施例3
本实施例3的目的与上述实施例1的目的相同，如图4中所示那样，在PKG-GND面5上，在安装了半导体元件的两端上设置电介质30。该电介质30的大致尺寸是，宽度约0.2mm×长度约2.5mm×高度约30～40μm，该电介质30的正下方为金属面，能以非常短的距离来连接半导体元件正下方与被键合到PKG-GND面上的区域，能将成为高频特性恶化的原因的电感分量抑制得非常低，同时，由于在该图4中电介质30作成堤坝的形状，故不仅能可靠地防止焊锡材料那样的接合材料的流动，而且。能可靠地防止树脂材料那样的接合材料的流动。
此外，在上述实施例3中，说明了电介质是堤坝形状的情况，但不管是上述实施例1那样的虚线状的狭缝，还是上述实施例2那样的横长的长方形形状，都可起到与上述实施例3相同的效果。
由于本发明如以上已说明那样的方式来构成，故可起到以下示出的效果。
按照本发明的第1、第3和第5方面，可防止半导体元件的接合材料的流动，同时，键合到接地面上的引线能以非常短的距离来连接半导体元件正下方的接地区域与在封装体的接地面上被键合引线的区域，能将成为高频特性恶化的原因的电感分量抑制得非常低。
按照本发明的第2、第4和第6方面，可防止因半导体元件安装时的接合材料的挤出引起的引线断开，此外，上述半导体元件正下方的接地区域与上述接地用引线的上述封装体的接地区域之间的距离可变得非常短。

Claims (3)

1.一种高频用半导体封装体，其中，利用接地用引线(4)来连接半导体元件(2)上的接地用电极(2a)与封装体(1)的接地面(5)，其特征在于：
在上述封装体(1)上以虚线状设置了去掉电镀层的狭缝状的区域(10)，通过将上述虚线状设置的狭缝状的区域(10)设置在半导体元件(2)的两侧，将从半导体元件(2)上的接地用电极(2a)与连接封装体(1)的接地面(5)的接地用引线(4)，连接到上述虚线状设置的狭缝状的区域(10)的与上述半导体元件(2)相反的外侧；
上述半导体元件(2)的安装面成为接地面(5)。
2.一种高频用半导体封装体，其中，利用接地用引线(4)来连接半导体元件(2)上的接地用电极(2a)与封装体(1)的接地面(5)，其特征在于：
在上述封装体(1)的接地面(5)上具备介入了导电性粘接剂的金属板(20)，使得连接半导体元件(2)上的接地用电极(2a)与封装体(1)的接地面(5)的接地用引线(4)能接合到上述金属板(20)上，上述半导体元件(2)的安装面成为接地面(5)。
3.一种高频用半导体封装体，其中，利用接地用引线(4)来连接半导体元件(2)上的接地用电极(2a)与封装体(1)的接地面(5)，其特征在于：
在上述封装体(1)的接地面(5)上设有横长的长方形形状的电介质(30)，使得连接半导体元件(2)上的接地用电极(2a)与封装体(1)的接地面(5)的接地用引线(4)能接合到上述电介质(30)的外侧，即上述半导体元件(2)相反的一侧，上述半导体元件(2)的安装面成为接地面(5)。
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