CN113261113A - 薄膜晶体管及其制造方法、显示面板、显示装置 - Google Patents
薄膜晶体管及其制造方法、显示面板、显示装置 Download PDFInfo
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- CN113261113A CN113261113A CN201980073008.1A CN201980073008A CN113261113A CN 113261113 A CN113261113 A CN 113261113A CN 201980073008 A CN201980073008 A CN 201980073008A CN 113261113 A CN113261113 A CN 113261113A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 112
- 238000000034 method Methods 0.000 claims abstract description 71
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- VGLYDBMDZXTCJA-UHFFFAOYSA-N aluminum zinc oxygen(2-) tin(4+) Chemical compound [O-2].[Al+3].[Sn+4].[Zn+2] VGLYDBMDZXTCJA-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
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- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910001872 inorganic gas Inorganic materials 0.000 description 1
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- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 1
- 229920002285 poly(styrene-co-acrylonitrile) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
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- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YSRUGFMGLKANGO-UHFFFAOYSA-N zinc hafnium(4+) indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[Hf+4] YSRUGFMGLKANGO-UHFFFAOYSA-N 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/078677 WO2020186450A1 (fr) | 2019-03-19 | 2019-03-19 | Transistor à couches minces et son procédé de fabrication, panneau d'affichage et dispositif d'affichage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113261113A true CN113261113A (zh) | 2021-08-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980073008.1A Pending CN113261113A (zh) | 2019-03-19 | 2019-03-19 | 薄膜晶体管及其制造方法、显示面板、显示装置 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113261113A (fr) |
| WO (1) | WO2020186450A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110634957A (zh) * | 2019-08-28 | 2019-12-31 | 深圳市华星光电半导体显示技术有限公司 | Tft器件及其制备方法、tft阵列基板、显示装置 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101345261A (zh) * | 2007-07-09 | 2009-01-14 | Nec液晶技术株式会社 | 薄膜晶体管及其制造方法 |
| US20100062556A1 (en) * | 2008-09-05 | 2010-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Methods for manufacturing thin film transistor and display device |
| CN101807583A (zh) * | 2009-02-18 | 2010-08-18 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
| CN102543892A (zh) * | 2011-12-21 | 2012-07-04 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管基板及其制造方法和液晶显示装置 |
| KR20150051004A (ko) * | 2013-11-01 | 2015-05-11 | 엘지디스플레이 주식회사 | 표시장치용 박막 트랜지스터 어레이 기판 제조방법 및 박막 트랜지스터 어레이 기판 |
| CN105575819A (zh) * | 2016-02-26 | 2016-05-11 | 华南理工大学 | 一种顶栅结构金属氧化物薄膜晶体管及其制备方法 |
| CN107424935A (zh) * | 2017-05-08 | 2017-12-01 | 京东方科技集团股份有限公司 | 薄膜晶体管、显示基板及其制作方法、显示装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10199507B2 (en) * | 2012-12-03 | 2019-02-05 | Lg Display Co., Ltd. | Thin film transistor, display device and method of manufacturing the same |
| KR102182482B1 (ko) * | 2014-07-15 | 2020-11-25 | 엘지디스플레이 주식회사 | 산화물 반도체 박막 트랜지스터 및 이를 구비한 표시장치용 어레이 기판 |
| CN104485333A (zh) * | 2014-12-11 | 2015-04-01 | 深圳市华星光电技术有限公司 | 一种ltps阵列基板 |
-
2019
- 2019-03-19 CN CN201980073008.1A patent/CN113261113A/zh active Pending
- 2019-03-19 WO PCT/CN2019/078677 patent/WO2020186450A1/fr active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101345261A (zh) * | 2007-07-09 | 2009-01-14 | Nec液晶技术株式会社 | 薄膜晶体管及其制造方法 |
| US20100062556A1 (en) * | 2008-09-05 | 2010-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Methods for manufacturing thin film transistor and display device |
| CN101807583A (zh) * | 2009-02-18 | 2010-08-18 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
| CN102543892A (zh) * | 2011-12-21 | 2012-07-04 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管基板及其制造方法和液晶显示装置 |
| KR20150051004A (ko) * | 2013-11-01 | 2015-05-11 | 엘지디스플레이 주식회사 | 표시장치용 박막 트랜지스터 어레이 기판 제조방법 및 박막 트랜지스터 어레이 기판 |
| CN105575819A (zh) * | 2016-02-26 | 2016-05-11 | 华南理工大学 | 一种顶栅结构金属氧化物薄膜晶体管及其制备方法 |
| CN107424935A (zh) * | 2017-05-08 | 2017-12-01 | 京东方科技集团股份有限公司 | 薄膜晶体管、显示基板及其制作方法、显示装置 |
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| Publication number | Publication date |
|---|---|
| WO2020186450A1 (fr) | 2020-09-24 |
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