CN113257924B - Schottky diode with high-resistance layer, preparation method of Schottky diode and power diode module - Google Patents
Schottky diode with high-resistance layer, preparation method of Schottky diode and power diode module Download PDFInfo
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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Abstract
The invention discloses a Schottky diode with a high-resistance layer, a preparation method thereof and a power diode module, wherein the Schottky diode with the high-resistance layer comprises a first doping layer, a second doping layer and a high-resistance layer which are sequentially arranged from bottom to top; a cathode electrode and an anode electrode; wherein the carrier concentration of the second doped layer is different from that of the first doped layer; the high-resistance layer comprises an N-type gallium oxide layer, and the carrier concentration comprises 0-1 multiplied by 10 16 cm ‑3 The method comprises the steps of carrying out a first treatment on the surface of the The cathode electrode is arranged on the lower surface of the first doped layer, and ohmic contact is formed between the cathode electrode and the first doped layer; the anode electrode is arranged on the upper surface of the high-resistance layer, and the anode electrode and the high-resistance layer form Schottky contact.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a Schottky diode with a high-resistance layer, a preparation method thereof and a power diode module.
Background
In recent years, fields such as big data, new energy, electric automobiles and the like are vigorously developed, and more stringent requirements are put on the energy efficiency of power devices applied to the fields. The schottky diode is a rectifying device commonly used in a high-power converter by virtue of the characteristics of small turn-on voltage, on resistance, high switching speed and the like. The wide bandgap semiconductor materials such as silicon carbide, gallium nitride and gallium oxide have a wider bandgap than silicon and can withstand higher electric fields than silicon. The Schottky diode based on the wide-bandgap semiconductor has higher breakdown voltage on the premise of being the same as the on-resistance of the silicon-based Schottky diode, and is beneficial to improving the performance of a power electronic system.
The on-resistance and breakdown voltage of the schottky diode are mutually restricted, and the methods of reducing leakage current and increasing breakdown voltage tend to cause the forward on-resistance to increase. To achieve low on-resistance, the reverse leakage characteristics of the schottky diode must be sacrificed.
The leakage current across the schottky barrier is large when the schottky diode is in the off state, which is detrimental to the reduction of the off-state power consumption of the device and the increase of the breakdown voltage. The commonly adopted method for reducing the reverse leakage current, such as reducing the doping concentration of the semiconductor material, increasing the thickness of the drift layer and the like, can directly lead to the increase of the forward on-resistance and the starting voltage of the diode, so that the on-loss of the device is increased.
Disclosure of Invention
In view of the above, the present invention provides a schottky diode with a high-resistance layer, a method for manufacturing the schottky diode, and a power diode module, so as to at least partially solve at least one of the above technical problems.
In order to achieve the above object, as one aspect of the present invention, there is provided a schottky diode with a high-resistance layer, comprising: the first doping layer, the second doping layer and the high-resistance layer are sequentially arranged from bottom to top; a cathode electrode and an anode electrode; wherein the carrier concentration of the second doped layer is different from that of the first doped layer; the high-resistance layer comprises an N-type gallium oxide layer, and the carrier concentration comprises 0-1 multiplied by 10 16 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The cathode electrode is arranged on the lower surface of the first doped layer, and ohmic contact is formed between the cathode electrode and the first doped layer; the anode electrode is arranged on the upper surface of the high-resistance layer, and the anode electrode and the high-resistance layer form Schottky contact.
According to an embodiment of the invention, the thickness of the high-resistance layer comprises 100 nm-3 μm.
According to the embodiment of the invention, the high-resistance layer covers the surface of the second doping layer.
According to the embodiment of the invention, the doped impurities of the first doped layer and the doped impurities of the second doped layer respectively comprise any one of silicon, tin and germanium.
According to the embodiment of the invention, the carrier concentration of the first doped layer and the carrier concentration of the second doped layer are in the range of 1×10 16 cm -3 ～1×10 19 cm -3 。
As another aspect of the present invention, the present invention also provides a method for manufacturing a schottky diode with a high-resistance layer, including: preparing a first doped layer; preparing a second doping layer on the upper surface of the first doping layer; cleaning the surface of the second doped layer; preparing a high-resistance layer on the surface of the second doped layer by adopting a thermal oxidation method; performing inductively coupled plasma etching on the lower surface of the first doped layer, removing the high-resistance layer on the lower surface, and defining the position of the cathode electrode; growing a cathode electrode by adopting an electron beam evaporation or magnetron sputtering method, so that the first doped layer and the cathode electrode form ohmic contact; photoetching is carried out on the upper surface of the high-resistance layer, and the position of an anode electrode is defined; and growing an anode electrode by adopting an electron beam evaporation or magnetron sputtering method, so that the high-resistance layer and the anode electrode form Schottky contact.
According to the embodiment of the invention, the preparation of the high-resistance layer on the surface of the second doped layer by adopting a thermal oxidation method comprises the following steps: and preparing a high-resistance layer on the surface of the second doped layer in an oxygen atmosphere at 900-1200 ℃ and 1 standard atmosphere by adopting a thermal oxidation method.
As another aspect of the present invention, the present invention also provides a power diode module including: the schottky diode and the deep ultraviolet light-emitting diode; the schottky diode is electrically connected with the deep ultraviolet light emitting diode.
According to an embodiment of the present invention, the power diode module further includes: and the substrate, wherein the Schottky diode and the deep ultraviolet light emitting diode are integrated on the substrate, and the electrical connection is realized through the metal layer.
As another aspect of the present invention, the present invention also provides a method for controlling the above power diode module, including: and according to the forward on or reverse off state of the Schottky diode, a voltage control switch is adopted to control the on or off of the deep ultraviolet light emitting diode. When the Schottky diode is in a forward conduction state, the voltage control switch is closed, the deep ultraviolet light emitting diode is turned on and irradiates the Schottky diode, so that electron hole pairs are generated in the Schottky diode, the resistivity is reduced, and the on-resistance of the power diode module is reduced. When the Schottky diode is in a reverse turn-off state, the voltage control switch is turned off, the deep ultraviolet light emitting diode is turned off, the resistivity of the Schottky diode is increased, and the leakage current of the power diode is reduced.
According to the Schottky diode with the high-resistance layer, the gallium oxide layer with high resistance is introduced between the Schottky metal electrode and the gallium oxide drift region, so that the resistance of the Schottky diode is increased, and smaller leakage current can be obtained under the same reverse voltage. Meanwhile, the carrier concentration of the high-resistance layer is very low, the resistance is very high, and a part of reverse voltage originally falling in the depletion region can be born, so that the breakdown voltage is improved.
Drawings
Fig. 1-4 schematically illustrate process flow diagrams of a method of fabricating a schottky diode with a high resistance layer;
fig. 5 schematically shows a schematic structural diagram of a schottky diode with a high-resistance layer;
fig. 6 schematically shows a schematic composition of a power diode module;
fig. 7 schematically shows a circuit schematic in a power diode module;
FIG. 8 schematically shows a circuit schematic employing a transmission gate as a voltage control switch;
fig. 9 schematically shows a schematic structural diagram of a power diode integrated by a metal layer;
fig. 10 schematically illustrates a schematic of packaging a discrete schottky diode with a high resistance layer in the same package as a deep ultraviolet light emitting diode.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent.
The gallium oxide Schottky diode in the prior art has good forward characteristics, low starting voltage and low on-resistance, but larger reverse leakage current. If the leakage current is reduced, a low doped gallium oxide material or a schottky metal with a higher barrier height is required, which causes a decrease in the forward characteristic, and there is a problem in that the forward and reverse characteristics are difficult to be compromised. Moreover, it may cause soft breakdown under the reverse voltage, that is, the leakage current of the diode does not suddenly increase after the reverse voltage reaches a certain value, but increases with the slow increase of the reverse voltage, resulting in larger leakage current under the low reverse voltage and difficult reduction of off-state power consumption.
Accordingly, the present invention provides a schottky diode with a high-resistance layer, and fig. 5 schematically illustrates a structural diagram of the schottky diode with a high-resistance layer. Comprising the following steps: the first doping layer 1, the second doping layer 2 and the high-resistance layer 3 are arranged in sequence from bottom to top; a cathode electrode 4 and an anode electrode 5; wherein the carrier concentration of the second doped layer 2 is different from that of the first doped layer 1; the high-resistance layer 5 comprises an N-type gallium oxide layer, and the carrier concentration comprises 0-1 multiplied by 10 16 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The cathode electrode 4 is arranged on the lower surface of the first doping layer 1, and the cathode electrode 4 and the first doping layer 1 form ohmic contact; the anode electrode 5 is arranged on the upper surface of the high-resistance layer 3, and the anode electrode 5 and the high-resistance layer 3 form schottky contact.
In the embodiment of the invention, a gallium oxide layer with high resistance is introduced between the Schottky metal electrode and the gallium oxide drift region, so that the resistance of the Schottky diode is increased, and smaller leakage current can be obtained under the same reverse voltage. Meanwhile, the carrier concentration of the high-resistance layer 3 is very low, the resistance is very high, and a part of reverse voltage originally falling in the depletion region can be born, so that the breakdown voltage is improved.
According to an embodiment of the present invention, the thickness of the high-resistance layer 3 includes 100nm to 3 μm, for example: 100nm, 300nm, 500nm, 1 μm, 2 μm, 3 μm.
According to an embodiment of the invention, the high-resistance layer 3 covers the surface of the second doped layer 2.
In the embodiment of the invention, the high-resistance layer 3 covers the surface of the second doped layer 2, so that the electric conduction characteristic of the schottky diode is ensured while the resistance of the schottky diode is increased.
According to an embodiment of the present invention, the doping impurities of the first doped layer 1 and the doping impurities of the second doped layer 2 respectively include any one of silicon, tin, and germanium.
According to the inventionIn the present embodiment, the carrier concentration of the first doped layer 1 and the carrier concentration of the second doped layer 2 are in the range of 1×10 16 cm -3 ～1×10 19 cm -3 For example: 1X 10 16 cm -3 、1×10 17 cm -3 、1×10 18 cm -3 、1×10 19 cm -3 。
In the embodiment of the present invention, the carrier concentration of the first doped layer 1 and the carrier concentration of the second doped layer 2 are both higher than the carrier concentration of the high-resistance layer 3.
As another aspect of the present invention, the present invention further provides a method for manufacturing a schottky diode with a high-resistance layer, as shown in fig. 1 to 5, including: preparing a first doped layer; preparing a second doping layer on the upper surface of the first doping layer; cleaning the surface of the second doped layer; preparing a high-resistance layer on the surface of the second doped layer by adopting a thermal oxidation method; performing inductively coupled plasma etching on the lower surface of the first doped layer, removing the high-resistance layer on the lower surface, and defining the position of the cathode electrode; growing a cathode electrode by adopting an electron beam evaporation or magnetron sputtering method, so that the first doped layer and the cathode electrode form ohmic contact; photoetching is carried out on the upper surface of the high-resistance layer, and the position of an anode electrode is defined; and growing an anode electrode by adopting an electron beam evaporation or magnetron sputtering method, so that the high-resistance layer and the anode electrode form Schottky contact.
In the embodiment of the invention, the second doping layer can be removed, and the high-resistance layer can be directly prepared on the surface of the first doping layer.
According to the embodiment of the invention, the preparation of the high-resistance layer on the surface of the second doped layer by adopting a thermal oxidation method comprises the following steps: and preparing a high-resistance layer on the surface of the second doped layer in an oxygen atmosphere at 900-1200 ℃ and 1 standard atmosphere by adopting a thermal oxidation method.
In the embodiment of the invention, the high-resistance layer is prepared by adopting a thermal oxidation method, so that the carrier concentration of the high-resistance layer is low enough, the crystal quality is high, the scattering of the carrier in the movement of the crystal is less, the carrier mobility is high, and compared with other methods, the thermal oxidation method has the advantage of simple process.
In the embodiment of the invention, the method for preparing the high-resistance layer comprises a thermal oxidation method, but is not limited to, and other film deposition methods such as an HVPE (halide vapor phase epitaxy) method, an MBE (molecular beam epitaxy) method, an MOCVD (metal organic chemical vapor deposition) method, a PLD (pulse laser deposition) method, a magnetron sputtering method and the like can be adopted to prepare the high-resistance layer.
In the embodiment of the invention, when the high-resistance layer is prepared by adopting a magnetron sputtering method, the high-resistance layer comprises but is not limited to a monocrystalline gallium oxide material, and an amorphous gallium oxide material can also be adopted.
In the embodiment of the invention, if the high-resistance layer is not formed on the back surface of the material when the high-resistance layer is prepared, the etching step can be omitted. If the high-resistance layer is prepared by adopting a non-high temperature process, the sequence of the steps for preparing the high-resistance layer and growing the cathode electrode can be exchanged.
According to the embodiment of the invention, BCl is adopted 3 And the mixed gas with Ar is subjected to inductively coupled plasma etching on the lower surface of the first doped layer, so that good ohmic contact is formed, the on-resistance of the Schottky diode is reduced, and the forward characteristic is optimized.
In an embodiment of the present invention, the etching gas includes, but is not limited to, BCl 3 The mixed gas with Ar can be any gas or gases with etching effect on gallium oxide.
According to the embodiment of the invention, taking Ti/Au laminated metal as a cathode electrode for example, a Ti metal layer is firstly grown by adopting an electron beam evaporation method, an Au metal layer is regrown, and the temperature is 470 ℃ and N is adopted 2 Annealing is performed for 1min in the atmosphere, so that ohmic contact is formed between the first doped layer 1 and the cathode electrode 4.
In an embodiment of the invention, the cathode electrode includes, but is not limited to, a Ti/Au laminate metal. The growth mode of the cathode electrode comprises but is not limited to an electron beam evaporation method and a magnetron sputtering method, and any suitable metal coating process is applicable, and parameters such as annealing temperature, annealing time, gas atmosphere and the like are only required to be adjusted according to the actually adopted metal coating process.
According to the embodiment of the invention, taking Ni/Au laminated metal as an anode electrode as an example, an electron beam evaporation method is adopted to grow a Ni metal layer firstly and grow an Au metal layer again, and stripping technology is utilized to remove photoresist and redundant metal films attached to the photoresist, so that the high-resistance layer 3 and the anode electrode 5 form Schottky contact.
In the embodiment of the invention, the anode electrode comprises but is not limited to Ni/Au laminated metal, the growing mode of the anode electrode comprises but is not limited to an electron beam evaporation method and a magnetron sputtering method, and any suitable metal coating process is suitable.
As another aspect of the present invention, the present invention also provides a power diode module, fig. 6 schematically illustrates a composition diagram of the power diode module, and fig. 7 schematically illustrates a circuit diagram of the power diode. As shown in fig. 6 and 7, the device comprises: the schottky diode D1 and the deep ultraviolet light emitting diode D2; the schottky diode D1 is electrically connected to the deep ultraviolet light emitting diode D2.
In the embodiment of the invention, but not limited to, the schottky diode with the high-resistance layer and the deep ultraviolet light emitting diode are assembled on the same circuit board, and the discrete schottky diode D1 with the high-resistance layer and the deep ultraviolet light emitting diode D2 can be packaged in the same tube shell after being electrically connected by adopting the circuit of fig. 7, as shown in fig. 10.
In the embodiment of the invention, only gallium oxide material is taken as an example, and the wave band of the selected light emitting diode can be properly adjusted according to the different preparation methods, doping concentrations and the like of the gallium oxide material, for example, an ultraviolet light emitting diode or a blue light emitting diode is selected. If the high-resistance layer is prepared on other semiconductor materials, the light-emitting diode group power diode module of other wavebands can be selected according to the prepared Schottky diode.
According to the embodiment of the invention, the Schottky diode with the high-resistance layer is electrically connected with the deep ultraviolet light-emitting diode to form a power diode module, and the deep ultraviolet light-emitting diode is utilized to irradiate the Schottky diode with the high-resistance layer. Deep ultraviolet light with the wavelength ranging from 250nm to 280nm can excite electrons in a valence band in gallium oxide to a conduction band to generate electron hole pairs, and the resistivity of a gallium oxide material is reduced, so that the resistivity of a Schottky diode is reduced, and the output current of a power diode is increased.
According to an embodiment of the present invention, the power diode module further includes: and the substrate, wherein the Schottky diode and the deep ultraviolet light emitting diode are integrated on the substrate, and the electrical connection is realized through the metal layer.
Fig. 9 schematically shows a schematic structure of a power diode integrated by a metal layer according to an embodiment of the present invention. As shown in fig. 9, the deep ultraviolet light emitting diode adopts the following structure: the p-GaN hole accumulation layer 01A, p-AlGaN hole accumulation layer 01B, alGaN quantum well active layer 02, the n-AlGaN layer 03, the AlN/AlGaN superlattice buffer layer 04 and the AlN layer 05 are sequentially arranged from top to bottom, and an anode 06 and a cathode 07 respectively adopt a Ni/Au lamination and a Ti/Al/Ti/Au lamination. The schottky diode is prepared by the method of the invention, and the deep ultraviolet light emitting diode and the schottky diode are integrated on the same substrate 6, and the electric connection is realized through a metal layer.
As another aspect of the present invention, the present invention also provides a method for controlling the above power diode module, as shown in fig. 7, including: according to the forward on or reverse off state of the schottky diode D1, the voltage control switch K1 is used to control the turn-on or turn-off of the deep ultraviolet light emitting diode D2. As shown in fig. 8, the voltage control switch K1 may employ a transmission gate.
According to the embodiment of the invention, the deep ultraviolet light of the Schottky diode D1 in the wavelength range of 250-280 nm can excite electrons in the valence band of gallium oxide to the conduction band, electron hole pairs are generated, the resistivity of the electron hole pairs is reduced, and the on or off of the deep ultraviolet light emitting diode D2 is controlled by adopting the voltage control switch K1 according to the forward on or reverse off state of the Schottky diode D1.
When the schottky diode D1 is in a forward conduction state, the voltage control switch K1 is turned on, the deep ultraviolet light emitting diode D2 is turned on, and irradiates the schottky diode D1, so that electron hole pairs are generated inside the schottky diode D1, the resistivity is reduced, and the on-resistance of the power diode module is reduced.
When the schottky diode D1 is in the reverse off state, the voltage control switch K1 is turned off, the deep ultraviolet light emitting diode D2 is turned off, and the resistivity of the schottky diode D1 is increased, so that the leakage current of the power diode is reduced.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the invention thereto, but to limit the invention thereto, and any modifications, equivalents, improvements and equivalents thereof may be made without departing from the spirit and principles of the invention.
Claims (7)
1. A method of controlling a power diode module, comprising: the power diode module includes: the semiconductor device comprises a Schottky diode with a high-resistance layer, a deep ultraviolet light-emitting diode and a substrate, wherein the Schottky diode and the deep ultraviolet light-emitting diode are integrated on the substrate and are electrically connected through a metal layer;
according to the forward on or reverse off state of the Schottky diode, a voltage control switch is adopted to control the on or off of the deep ultraviolet light emitting diode;
when the Schottky diode is in a forward conduction state, the voltage control switch is closed, the deep ultraviolet light emitting diode is turned on and irradiates the Schottky diode, so that electron hole pairs are generated in the Schottky diode, the resistivity is reduced, and the on-resistance of the power diode module is reduced;
when the Schottky diode is in a reverse turn-off state, the voltage control switch is turned off, the deep ultraviolet light emitting diode is turned off, the resistivity of the Schottky diode is increased, and the leakage current of the power diode is reduced;
the schottky diode includes:
the first doping layer, the second doping layer and the high-resistance layer are sequentially arranged from bottom to top;
a cathode electrode and an anode electrode;
wherein, the liquid crystal display device comprises a liquid crystal display device,
the carrier concentration of the second doped layer is different from the carrier concentration of the first doped layer;
the high-resistance layer comprises an N-type gallium oxide layer and has concentrated current carriersThe degree includes 0 to 1X 10 16 cm -3 ；
The cathode electrode is arranged on the lower surface of the first doped layer, and ohmic contact is formed between the cathode electrode and the first doped layer;
the anode electrode is arranged on the upper surface of the high-resistance layer, and the anode electrode and the high-resistance layer form Schottky contact.
2. The method according to claim 1, wherein: the thickness of the high-resistance layer is 100 nm-3 mu m.
3. The method according to claim 1, wherein: the high-resistance layer covers the surface of the second doping layer.
4. The method according to claim 1, wherein:
the doped impurities of the first doped layer and the doped impurities of the second doped layer respectively comprise any one of silicon, tin and germanium.
5. The method according to claim 1, wherein:
the carrier concentration of the first doped layer and the carrier concentration of the second doped layer are in the range of 1×10 16 cm -3 ～1×10 19 cm -3 。
6. The method of claim 1, wherein the schottky diode is prepared by a method comprising:
preparing a first doped layer;
preparing a second doping layer on the upper surface of the first doping layer;
cleaning the surface of the second doped layer;
preparing a high-resistance layer on the surface of the second doped layer by adopting a thermal oxidation method;
performing inductively coupled plasma etching on the lower surface of the first doped layer, removing the high-resistance layer on the lower surface, and defining the position of the cathode electrode;
growing the cathode electrode by adopting an electron beam evaporation or magnetron sputtering method to enable the first doping layer and the cathode electrode to form ohmic contact;
photoetching is carried out on the upper surface of the high-resistance layer, and the position of an anode electrode is defined;
and growing the anode electrode by adopting an electron beam evaporation or magnetron sputtering method, so that the high-resistance layer and the anode electrode form Schottky contact.
7. The method of claim 6, wherein preparing a high-resistance layer on the surface of the second doped layer by using a thermal oxidation method comprises: and preparing a high-resistance layer on the surface of the second doped layer in an oxygen atmosphere at 900-1200 ℃ and 1 standard atmosphere by adopting a thermal oxidation method.
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