CN113131913B - Input stage circuit, drive circuit and power supply system - Google Patents
Input stage circuit, drive circuit and power supply system Download PDFInfo
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- CN113131913B CN113131913B CN201911392802.0A CN201911392802A CN113131913B CN 113131913 B CN113131913 B CN 113131913B CN 201911392802 A CN201911392802 A CN 201911392802A CN 113131913 B CN113131913 B CN 113131913B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The invention discloses an input stage circuit, a driving circuit and a power supply system, wherein the input stage circuit comprises a level conversion module, a logic module and a negative pressure protection module, the level conversion module is suitable for converting an input signal of a signal input end into a first signal, the logic module generates a logic signal according to the first signal and provides the logic signal to a signal output end, and the negative pressure protection module and the level conversion module are connected to a first node and are suitable for clamping the first node within a safe voltage range when the input signal of the signal input end is constant negative pressure so as to protect an internal circuit of the input stage circuit.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to an input stage circuit, a driving circuit and a power supply system.
Background
In a power supply system, conversion of electric energy and stabilization of output voltage are achieved by controlling on and off of a switching type power Transistor (i.e., a power switching Transistor, for example, implemented by an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)). The gate driving integrated circuit of the power switching tube is one of typical circuits of HVIC (high voltage integrated circuit), has the advantages of high reliability, small area, good effect and the like, and is widely applied to the technical fields of household appliances, industrial equipment, aviation, aerospace, automobiles and the like. Fig. 1 shows a driving diagram of a conventional power switch tube. As shown IN fig. 1, the driving chip 110 includes a power pin VDD, an input pin IN, an output pin OUT, and a ground pin GND. The power supply pin VDD is connected to a power supply voltage VDD, the input pin IN is used for receiving an input signal Vin, the ground pin GND is used for grounding, and the output pin OUT is connected to the gate of the power switch tube M0 to drive the power switch tube M0. When the input signal Vin is at a high level, the power switch tube M0 is turned on; when the input signal Vin is at a low level, the power switch M0 is turned off.
Since the power switch tube generally works under a relatively large current environment, in the conventional driving circuit, when the power switch tube is turned on, a large current therein may pull up a potential of a ground terminal, and since the potential of the input signal Vin of the driving chip 110 is not changed, a negative voltage relatively appears in the input signal Vin, which may damage an internal circuit of the driving chip 110.
Disclosure of Invention
In view of the above, an object of the present invention is to provide an input stage circuit, a driving circuit and a power supply system, in which the input stage circuit can effectively protect the functional circuits inside the chip even when a negative voltage occurs at the signal input terminal, and the input stage circuit also has the functions of high-speed input and ESD protection.
According to a first aspect of embodiments of the present invention, there is provided an input stage circuit, including: the level conversion module is suitable for converting an input signal of the signal input end into a first signal; the logic module is suitable for generating a logic signal according to the first signal and providing the logic signal to a signal output end; and the negative voltage protection module is connected with the level conversion module and the first node, and is suitable for clamping the first node at a safe voltage when the input signal of the signal input end is negative voltage.
Preferably, the level conversion module includes: a transistor having a first terminal connected to the signal input terminal, a control terminal connected to an internal reference voltage, and a second terminal, a first resistor having a first terminal connected to the second terminal of the transistor, and a second terminal connected to ground, wherein a second node between the transistor and the first resistor is used to provide the first signal.
Preferably, the negative pressure protection module includes: a second resistor having a first end connected to the signal input terminal and a second end; a schottky diode having a cathode connected to the second terminal of the second resistor and an anode connected to ground, wherein an intermediate node of the second resistor and the schottky diode and the first terminal of the transistor are connected to the first node.
Preferably, the input stage circuit further comprises a voltage coupling module connected between the signal input terminal and the first node.
Preferably, the voltage coupling module includes a third resistor and a capacitor connected in series between the signal input end and the first node in sequence.
Preferably, the input stage circuit further comprises an ESD protection module, the ESD protection module comprising: a first diode having a cathode connected to a power supply voltage and an anode connected to the signal input terminal; and a second diode having a cathode connected to the power supply voltage and an anode connected to ground.
Preferably, the logic module comprises: a flip-flop having an input connected to the second node to receive the first signal, and an output; an inverter having an input connected to the output of the flip-flop and an output providing the logic signal.
Preferably, the trigger is a schmitt trigger.
According to a second aspect of the embodiments of the present invention, there is provided a driving circuit for a power switch tube, including the input stage circuit described above.
According to a third aspect of embodiments of the present invention, there is provided a power supply system including the input stage circuit described above.
The input stage circuit, the driving circuit and the power supply system have the following advantages.
The input stage circuit comprises a level conversion module, a logic module and a negative voltage protection module, wherein the level conversion module is suitable for converting an input signal of a signal input end into a first signal, the logic module generates a logic signal according to the first signal and provides the logic signal to a signal output end, and the negative voltage protection module and the level conversion module are connected to a first node and are suitable for clamping the first node within a safe voltage range when the input signal of the signal input end is constant negative voltage so as to protect an internal circuit of the input stage circuit.
In a further embodiment, the input stage circuit further includes a voltage coupling module, and by using a high-frequency coupling conduction characteristic of a capacitor in the voltage coupling module, a high-speed input signal at the signal input end can quickly charge and discharge the first node through a resistor and a capacitor branch, so as to realize high-speed transmission from the signal input end to the signal output end. In addition, because the transistor in the level conversion module is a high-voltage tube, the capacitor in the voltage coupling module of the embodiment can be a low-voltage capacitor, which is beneficial to reducing the layout area of the circuit.
In a further embodiment, the input stage circuit further includes an ESD protection module, where the ESD protection module includes a first diode and a second diode, the first diode is used to provide a drain path between the power voltage and the signal input terminal, the second diode is used to provide a drain path between the power voltage and ground, and the first diode and the second diode together provide a drain path from the signal input terminal to ground, so as to ensure the safety of the chip functional circuit in various ESD events and improve the safety and stability of the circuit.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings.
Fig. 1 shows a driving schematic diagram of a conventional power switching tube;
FIG. 2 shows a circuit schematic of an input stage circuit according to a first embodiment of the present invention;
fig. 3 shows a driving schematic diagram of a power switching tube according to a second embodiment of the invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not drawn to scale. Moreover, certain well-known elements may not be shown in the figures.
In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of components, are set forth in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
It should be understood that in the following description, a "circuit" refers to a conductive loop made up of at least one element or sub-circuit by electrical or electromagnetic connection. When an element or circuit is referred to as being "connected to" another element or element/circuit is referred to as being "connected between" two nodes, it may be directly coupled or connected to the other element or intervening elements may be present, and the connection between the elements may be physical, logical, or a combination thereof. In contrast, when an element is referred to as being "directly coupled" or "directly connected" to another element, it is intended that there are no intervening elements present.
In the present application, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) includes a first terminal, a second terminal, and a control terminal, and in an on state of the MOSFET, a current flows from the first terminal to the second terminal. The first end, the second end and the control end of the P-type MOSFET are respectively a source electrode, a drain electrode and a grid electrode, and the first end, the second end and the control end of the N-type MOSFET are respectively a drain electrode, a source electrode and a grid electrode.
Fig. 2 shows a circuit schematic of an input stage circuit according to a first embodiment of the invention. As shown in fig. 2, the input stage circuit 200 includes a level shift module 210, a logic module 220, and a negative voltage protection module 230.
The level shift module 210 is connected between the signal input terminal IN and ground, and is adapted to convert an input signal at the signal input terminal IN into a first signal. In one embodiment, the input signal is a logic signal with a potential from the power voltage Vdd to the ground, and the level shift module 210 is adapted to convert the input signal with a high voltage into the first signal with a low voltage.
The logic module 220 is adapted to generate a logic signal according to the first signal and provide the logic signal to the signal output terminal OUT. Further, when the input stage circuit is used in a driving circuit for driving a power switch tube, subsequent circuits in the driving circuit drive the power switch tube according to the logic signal.
The negative voltage protection module 230 and the level conversion module 210 are connected to a node a, and the negative voltage protection module 230 is configured to clamp a voltage of the node a at a safe voltage when the input signal at the signal input terminal IN is a constant negative voltage, so as to protect an internal circuit IN the input stage circuit 200.
Further, the level shift module 210 includes a transistor M1 and a resistor R3. The transistor M1 and the resistor R3 are sequentially connected IN series between the signal input terminal IN and the ground, a control terminal of the transistor M1 is connected to an internal reference voltage Vreg, and a node B between the transistor M1 and the resistor R3 is used for providing the first signal. The transistor M1 is, for example, an N-type MOSFET.
The logic block 220 comprises a flip-flop I1 and an inverter I2, an input of the flip-flop I1 being connected to the node B for receiving said first signal, an output of the flip-flop I1 being connected to an input of the inverter I2, an input of the inverter I2 being connected to the signal output OUT for providing said logic signal. The flip-flop I1 is, for example, a schmitt trigger, and when the voltage of the first signal reaches a switching threshold of the schmitt trigger, the logic signal is switched.
The negative voltage protection module 230 includes a resistor R2 and a schottky diode SBD, a first end of the resistor R2 is connected to the signal input terminal IN, a second end is connected to a cathode of the schottky diode SBD, and an anode of the schottky diode SBD is grounded. When the input signal of the signal input terminal IN is a constant negative voltage, the resistance of the resistor R2 is relatively large, so that the resistor R2 can effectively limit the negative current, and the negative current is provided by the forward conduction of the schottky diode SBD, because the forward conduction voltage drop of the schottky diode SBD is about 0.2V, the schottky diode SBD clamps the voltage of the node a IN the range of-0.2V, because 0.2V is much smaller than the forward conduction voltage drop (about 0.7V) of the parasitic diode of the transistor M1, the internal devices and the parasitic diode between the node a and the GND have no conduction leakage current, and the internal circuit IN the input stage circuit is completely protected.
Further, the input stage circuit 200 further includes a voltage coupling module 240 connected between the signal input terminal IN and the node a. Further, the voltage coupling module 240 includes a resistor R1 and a capacitor C1 connected IN series between the signal input terminal IN and the node a. When the input signal at the signal input terminal IN is inverted at a high speed, the resistor R2 is a large current-limiting resistor, and if the voltage coupling module 240 is not provided, a large transmission delay is caused between the node a and the node B. After the voltage coupling module 240 is added, by using the high-frequency coupling conduction characteristic of the capacitor C1, the input signal of the signal input terminal IN can quickly charge and discharge the node a and the node B through the branch of the resistor R1 and the capacitor C1, so as to realize the high-speed transmission from the signal input terminal IN to the signal output terminal OUT. In addition, the resistance of the resistor R1 is smaller than that of the resistor R2, and the resistor R1 mainly plays a role of ESD protection of the capacitor C1.
In addition, since the transistor M1 is a high-voltage transistor, the capacitor C1 in the voltage coupling module 240 of this embodiment may be a low-voltage capacitor, so as to reduce the layout area of the circuit.
Fig. 3 shows a driving schematic diagram of a power switch according to a second embodiment of the invention. The driving chip 300 includes the input stage circuit 2 of the above embodiment. Further, as shown IN fig. 3, the driving chip 300 includes a power pin VDD, an input pin IN, an output pin OUT, and a ground pin GND. The power supply pin VDD is connected to a power supply voltage VDD, the input pin IN is used for receiving an input signal Vin, the ground pin GND is used for grounding, and the output pin OUT is connected to the gate of the power switch tube M0 to drive the power switch tube M0. When the input signal Vin is at a high level, the power switch tube M0 is turned on; when the input signal Vin is at a low level, the power switch tube M0 is turned off.
According to another embodiment of the present invention, there is also provided a power supply system, which includes the input stage circuit and the driving chip of the above embodiments.
In summary, an embodiment of the present invention provides an input stage circuit, a driving circuit, and a power supply system, where the input stage circuit includes a level conversion module, a logic module, and a negative voltage protection module, the level conversion module is adapted to convert an input signal of a signal input end into a first signal, the logic module generates a logic signal according to the first signal and provides the logic signal to a signal output end, and the negative voltage protection module and the level conversion module are connected to a first node and are adapted to clamp the first node within a safe voltage range when the input signal of the signal input end is a constant negative voltage, so as to protect an internal circuit of the input stage circuit.
In a further embodiment, the input stage circuit further includes a voltage coupling module, and a high-frequency coupling conduction characteristic of a capacitor in the voltage coupling module is utilized, so that a high-speed input signal at the signal input end can quickly charge and discharge the first node through a resistor and a capacitor branch, and high-speed transmission from the signal input end to the signal output end is realized. In addition, because the transistor in the level conversion module is a high-voltage tube, the capacitor in the voltage coupling module of the embodiment can be a low-voltage capacitor, which is beneficial to reducing the layout area of the circuit.
In a further embodiment, the input stage circuit further includes an ESD protection module, where the ESD protection module includes a first diode and a second diode, the first diode is used to provide a leakage path between a power supply voltage and a signal input terminal, the second diode is used to provide a leakage path between the power supply voltage and ground, and the first diode and the second diode together provide a leakage path from the signal input terminal to ground, so as to ensure the safety of the chip functional circuit in various ESD events, and improve the safety and stability of the circuit.
It should be noted that although the devices are described herein as certain N-channel or P-channel devices, or certain N-type or P-type doped regions, one of ordinary skill in the art will appreciate that complementary devices may also be implemented in accordance with the present invention. It will be understood by those skilled in the art that conductivity type refers to the mechanism by which conduction occurs, for example by conduction through holes or electrons, and thus does not refer to the doping concentration but to the doping type, for example P-type or N-type. It will be understood by those of ordinary skill in the art that the words "during", "when" and "when 8230; \8230;" when "as used herein in connection with the operation of a circuit are not strict terms indicating an action that occurs immediately upon the start of a startup action, but rather that there may be some small but reasonable delay or delays, such as various transmission delays, between it and the reaction action (action) initiated by the startup action. The words "about" or "substantially" are used herein to mean that the element value (element) has a parameter that is expected to be close to the stated value or position. However, as is well known in the art, there is always a slight deviation that makes it difficult for the value or position to be exactly the stated value. It has been well established in the art that a deviation of at least ten percent (10%) for a semiconductor doping concentration of at least twenty percent (20%) is a reasonable deviation from the exact ideal target described. When used in conjunction with a signal state, the actual voltage value or logic state (e.g., "1" or "0") of the signal depends on whether positive or negative logic is used.
Moreover, it is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. An input stage circuit, comprising:
the level conversion module is suitable for converting an input signal of the signal input end into a first signal;
the logic module is suitable for generating a logic signal according to the first signal and providing the logic signal to a signal output end; and
the negative voltage protection module is connected with the level conversion module and the first node, is suitable for clamping the first node at a safe voltage when the input signal of the signal input end is negative voltage,
wherein, negative pressure protection module includes:
a second resistor having a first end connected to the signal input terminal and a second end connected to the second node, the second resistor serving as a current limiting resistor; and
and the Schottky diode is provided with a cathode connected with the second end of the second resistor and an anode connected with the ground, and the turn-on voltage of the Schottky diode is less than the turn-on voltage of the parasitic diode of the level conversion module.
2. The input stage circuit of claim 1, wherein the level translation module comprises:
a transistor having a first terminal connected to the signal input terminal, a control terminal connected to an internal reference voltage, and a second terminal,
a first resistor having a first terminal connected to the second terminal of the transistor and a second terminal connected to ground,
wherein a second node between the transistor and the first resistor is used to provide the first signal.
3. The input stage circuit of claim 2, wherein an intermediate node of the second resistor and the schottky diode is connected to the first node with a first terminal of the transistor.
4. The input stage circuit of claim 1, further comprising a voltage coupling module connected between the signal input and the first node.
5. The input stage circuit of claim 4, wherein the voltage coupling module comprises a third resistor and a capacitor connected in series between the signal input and the first node.
6. The input stage circuit of claim 1, further comprising an ESD protection module comprising:
a first diode having a cathode connected to a power supply voltage and an anode connected to the signal input terminal; and
a second diode having a cathode connected to the power supply voltage and an anode connected to ground.
7. The input stage circuit of claim 2, wherein the logic module comprises:
a flip-flop having an input connected to the second node to receive the first signal, and an output;
an inverter having an input connected to the output of the flip-flop and an output providing the logic signal.
8. The input stage circuit of claim 7, wherein the flip-flop is a Schmitt trigger.
9. A driving circuit for a power switching tube, comprising an input stage circuit according to any one of claims 1 to 8.
10. A power supply system comprising an input stage circuit according to any of claims 1-8.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911392802.0A CN113131913B (en) | 2019-12-30 | 2019-12-30 | Input stage circuit, drive circuit and power supply system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911392802.0A CN113131913B (en) | 2019-12-30 | 2019-12-30 | Input stage circuit, drive circuit and power supply system |
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| CN113131913A CN113131913A (en) | 2021-07-16 |
| CN113131913B true CN113131913B (en) | 2022-10-14 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7719806B1 (en) * | 2006-02-07 | 2010-05-18 | Pmc-Sierra, Inc. | Systems and methods for ESD protection |
| CN104283201A (en) * | 2014-09-11 | 2015-01-14 | 北京大学 | Input stage esd protection circuit |
| CN105009447A (en) * | 2013-03-11 | 2015-10-28 | 高通股份有限公司 | Amplifiers with inductive degeneration and configurable gain and input matching |
| CN109286181A (en) * | 2017-07-21 | 2019-01-29 | 上海韦玏微电子有限公司 | Power clamp ESD protective circuit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI424683B (en) * | 2008-12-11 | 2014-01-21 | Ind Tech Res Inst | Esd clamp circuit applied to power amplifier |
| US9425188B2 (en) * | 2013-09-26 | 2016-08-23 | Texas Instruments Incorporated | Active ESD protection circuit with blocking diode |
| US9472948B2 (en) * | 2013-09-30 | 2016-10-18 | Infineon Technologies Ag | On chip reverse polarity protection compliant with ISO and ESD requirements |
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2019
- 2019-12-30 CN CN201911392802.0A patent/CN113131913B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7719806B1 (en) * | 2006-02-07 | 2010-05-18 | Pmc-Sierra, Inc. | Systems and methods for ESD protection |
| CN105009447A (en) * | 2013-03-11 | 2015-10-28 | 高通股份有限公司 | Amplifiers with inductive degeneration and configurable gain and input matching |
| CN104283201A (en) * | 2014-09-11 | 2015-01-14 | 北京大学 | Input stage esd protection circuit |
| CN109286181A (en) * | 2017-07-21 | 2019-01-29 | 上海韦玏微电子有限公司 | Power clamp ESD protective circuit |
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