CN114421946A - Direct drive circuit of depletion type power device with low reverse conduction voltage drop - Google Patents
Direct drive circuit of depletion type power device with low reverse conduction voltage drop Download PDFInfo
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- CN114421946A CN114421946A CN202210060943.8A CN202210060943A CN114421946A CN 114421946 A CN114421946 A CN 114421946A CN 202210060943 A CN202210060943 A CN 202210060943A CN 114421946 A CN114421946 A CN 114421946A
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- 238000001514 detection method Methods 0.000 claims abstract description 86
- 238000002955 isolation Methods 0.000 claims abstract description 26
- 239000003990 capacitor Substances 0.000 claims abstract description 17
- 229910002601 GaN Inorganic materials 0.000 claims description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 16
- 230000000087 stabilizing effect Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 238000011084 recovery Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
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Abstract
The invention provides a direct drive circuit of a depletion type power device with low reverse conduction voltage drop, which comprises a drive circuit, a depletion type power device, a first P-type MOSFET, a power supply voltage detection circuit, a second P-type MOSFET, a diode, a capacitor and a reverse current detection circuit of a current isolation detection circuit, wherein the drive circuit is connected with the depletion type power device; the current isolation detection circuit is used for detecting the flow direction of current at the drain electrode of the first P-type MOSFET and the magnitude of forward current; the reverse current detection circuit is used for controlling the output of the driving circuit according to the flowing direction of current at the drain electrode of the first P-type MOSFET and the magnitude of forward current. Through connecting the current isolation detection circuit on the drain electrode of the first P type MOSFET in series and adding the reverse current detection circuit, the reverse loss of the direct drive circuit is reduced, and the problem of reverse conduction voltage drop is solved.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a direct drive circuit of a depletion type power device with low reverse conduction voltage drop.
Background
The third generation semiconductor material, GaN (gallium nitride), is an outstanding representative of wide bandgap semiconductors. The forbidden band width of GaN is 3 times that of Si, and the breakdown electric field is 10 times that of Si. Therefore, the power device made of gallium nitride has the remarkable characteristics of high switching speed, low on-resistance, small chip area and the like, and is widely applied to the fields of power adapters, industrial power supplies, automobile electronics and the like.
GaN power devices are typically separated into normally-on (depletion) and normally-off gallium nitride (enhancement). The enhancement device has narrow driving voltage range, generally needs a special driving IC to drive, and has weak channel current capability, so the application of the enhancement device is limited to a certain extent; the depletion type GaN power device has strong current capability and high reliability, but needs negative pressure shutoff, and generally needs to be cascaded with a low-voltage Si device to form a normally-closed characteristic.
The cascade type GaN device needs a low-voltage Si MOSFET device and a depletion type GaN power device to be used in a cascade mode to form a normally-closed characteristic, but the low-voltage Si device has reverse recovery charges, which can bring switching loss and reduce system efficiency; that is to say, the conventional cascade structure cannot directly drive the D mode GaN device, and therefore cannot fully exert the advantages of no reverse recovery loss and high switching speed of GaN.
Meanwhile, the cascade GaN device has the problem that the output capacitance of the low-voltage Si MOSFET and the output capacitance of the depletion type GaN are not matched, and the high-frequency switch has failure risk.
Disclosure of Invention
The invention aims to provide a direct drive circuit of a depletion type power device with low reverse conduction voltage drop, which can reduce the reverse loss of the direct drive circuit and solve the problem of reverse conduction voltage drop.
In order to achieve the purpose, the invention provides the following scheme:
a direct drive circuit of a depletion mode power device with low reverse conduction voltage drop comprises the following components: the power supply circuit comprises a driving circuit, a depletion type power device, a first P-type metal-oxide semiconductor field effect transistor (MOSFET), a power supply voltage detection circuit, a second P-type MOSFET, a diode, a capacitor, a current isolation detection circuit and a reverse current detection circuit;
the VCC end of the driving circuit is connected with a power supply voltage;
the grid electrode of the depletion type power device is connected with the output end of the driving circuit;
the source electrode of the first P-type MOSFET is connected with the source electrode of the depletion type power device;
the input end of the power supply voltage detection circuit is connected with the power supply voltage, and the output end of the power supply voltage detection circuit is connected with the grid electrode of the first P-type MOSFET;
the drain electrode of the second P-type MOSFET is connected with a power supply voltage, the gate electrode of the second P-type MOSFET is connected between the power supply voltage detection circuit and the gate electrode of the first P-type MOSFET, and the source electrode of the second P-type MOSFET is connected between the source electrode of the depletion type power device and the source electrode of the first P-type MOSFET;
the anode of the diode is connected between the output end of the driving circuit and the grid electrode of the depletion type power device, and the cathode of the diode is connected with the drain electrode of the first P type MOSFET;
one end of the capacitor is connected with the grounding end of the driving circuit, and the other end of the capacitor is connected between the source electrode of the depletion type power device and the source electrode of the first P-type MOSFET;
the input end of the current isolation detection circuit is connected in series with the drain electrode of the first P-type MOSFET, and the current isolation detection circuit is used for detecting the flow direction of current at the drain electrode of the first P-type MOSFET and the magnitude of forward current;
one end of the reverse current detection circuit is connected with the output end of the current isolation detection circuit, the other end of the reverse current detection circuit is connected with the driving circuit, and the reverse current detection circuit is used for controlling the output of the driving circuit according to the flow direction of current at the drain electrode of the first P-type MOSFET and the magnitude of forward current.
Optionally, the reverse current detection circuit controls an output of the driving circuit according to a flowing direction of a current at the drain of the first P-type MOSFET and a magnitude of a forward current, and specifically includes:
when the current at the drain electrode of the first P type MOSFET flows from the drain electrode of the first P type MOSFET to the source electrode of the depletion type power device, the reverse current detection circuit generates a switching-on signal, and the switching-on signal is used for enabling the driving circuit to output high level and is sent to the driving circuit;
when the forward current exceeds a current threshold value, the reverse current detection circuit generates a limiting signal, and the limiting signal is used for limiting the output pulse width of the driving circuit and is sent to the driving circuit.
Optionally, the direct drive circuit of the depletion mode power device with low reverse conduction voltage drop further includes a first resistor;
one end of the first resistor is connected between the capacitor and the source electrode of the depletion type power device, and the other end of the first resistor is connected between the output end of the power supply voltage detection circuit and the grid electrode of the first P type MOSFET.
Optionally, the supply voltage detection circuit includes: the voltage stabilizing diode, the second resistor, the third resistor and the triode;
the cathode of the voltage stabilizing diode is connected with the power supply voltage;
one end of the second resistor is connected with the anode of the voltage stabilizing diode, and the other end of the second resistor is connected with one end of the third resistor;
the other end of the third resistor is connected with the ground of the power supply voltage;
the base electrode of the triode is connected between the second resistor and the third resistor; the collector of the triode is connected with the grid of the first P-type MOSFET; and the emitter of the triode is connected with the ground of the power supply voltage.
Optionally, the depletion mode power device is a depletion mode gallium nitride device.
Optionally, the depletion mode power device is a depletion mode silicon carbide device.
Optionally, the driving circuit, the depletion mode power device, the first P-type MOSFET, the supply voltage detection circuit, the second P-type MOSFET, the diode, the capacitor, the galvanic isolation detection circuit, the reverse current detection circuit, and the first resistor are sealed together into a whole.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects: the current isolation detection circuit is connected in series with the drain electrode of the first P-type MOSFET, and the current direction of the current at the drain electrode of the P-type MOSFET and the magnitude of the forward current are detected through the current isolation detection circuit; one end of the reverse current detection circuit is connected with the output end of the current isolation detection circuit, and the other end of the reverse current detection circuit is connected with the drive circuit. The reverse current detection circuit controls the output of the driving circuit according to the flow direction of current at the drain electrode of the P-type MOSFET and the magnitude of forward current, so that the reverse loss of the direct drive circuit is reduced, and the problem of reverse conduction voltage drop is solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic diagram of a direct drive circuit of a depletion mode power device with low reverse conduction voltage drop according to the present invention;
FIG. 2 is a schematic diagram of a direct-drive scheme of a power supply voltage detection circuit;
fig. 3 is a schematic diagram of a sealing scheme of the direct drive circuit of fig. 1.
Description of the symbols:
the power supply circuit comprises a driving circuit-1, a power supply voltage detection circuit-2, a current isolation detection circuit-3, a reverse current detection circuit-4, a depletion type power device-S1, a first P type MOSFET-S2, a second P type MOSFET-S4, a diode-D1, a capacitor-C1, a first resistor-R1, a second resistor-R2, a third resistor-R3, a voltage stabilizing diode-D2 and a triode-S3.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The direct drive circuit of the depletion type power device with low reverse conduction voltage drop comprises a first P-type MOSFET, a current isolation detection circuit, a second P-type MOSFET, a third P-type MOSFET and a fourth P-type MOSFET, wherein the current isolation detection circuit is connected in series with the drain electrode of the first P-type MOSFET and detects the flow direction of current at the drain electrode of the P-type MOSFET and the magnitude of forward current; one end of the reverse current detection circuit is connected with the output end of the current isolation detection circuit, the other end of the reverse current detection circuit is connected with the drive circuit, the output of the drive circuit is controlled through the reverse current detection circuit according to the flow direction of current at the drain electrode of the P-type MOSFET and the magnitude of forward current, the reverse loss of the direct drive circuit is reduced, and the problem of reverse conduction voltage drop is solved.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
As shown in fig. 1, the direct drive circuit of the depletion mode power device with low reverse conduction voltage drop of the present invention comprises: the power supply circuit comprises a driving circuit 1, a depletion type power device S1, a first P-type MOSFET S2, a power supply voltage detection circuit 2, a second P-type MOSFET S4, a diode D1, a capacitor C1, a galvanic isolation detection circuit 3 and a reverse current detection circuit 4. The depletion type power device S1 is a depletion type gallium nitride device or a depletion type silicon carbide device. A negative voltage is required between the gate and the source of the depletion mode power device S1 to effectively turn off the channel of the depletion mode power device. The channels of the first P-type MOSFET S2 and the second P-type MOSFET S4 need to have a negative gate-source voltage turned on (the threshold voltage is negative) and a positive gate-source voltage turned off.
The VCC terminal of the driving circuit 1 is connected to a supply voltage.
The gate of the depletion mode power device S1 is connected to the output terminal of the driving circuit 1.
The source of the first P-type MOSFET S2 is connected with the source of the depletion-mode power device S1.
The input end of the supply voltage detection circuit 2 is connected with the supply voltage, and the output end of the supply voltage detection circuit 2 is connected with the grid electrode of the first P-type MOSFET S2.
The drain of the second P-type MOSFET S4 is connected to a supply voltage, the gate of the second P-type MOSFET S4 is connected between the supply voltage detection circuit 2 and the gate of the first P-type MOSFET S2, and the source of the second P-type MOSFET S4 is connected between the source of the depletion mode power device S1 and the source of the first P-type MOSFET.
When the supply voltage VCC is higher than the set value, the second P-type MOSFET S4 is turned on, and the source of the depletion type power device S1 is directly connected to the supply voltage VCC, so that the potential of the source of the depletion type power device S1 is equal to the supply voltage of the driving circuit 1.
The anode of the diode D1 is connected between the output terminal of the driving circuit 1 and the gate of the depletion mode power device S1, and the cathode of the diode D1 is connected to the drain of the first P-type MOSFET S2.
One end of the capacitor C1 is connected to the ground terminal of the driving circuit 1, and the other end of the capacitor C1 is connected between the source of the depletion mode power device S1 and the source of the first P-type MOSFET S2. A capacitor C1 is arranged between the driving circuit 1 and the depletion type power device S1, so that the voltage between the source of the depletion type power device and the power supply ground is kept stable, and interference is prevented.
The input end of the galvanic isolation detection circuit 3 is connected in series with the drain of the first P-type MOSFET S2, and the galvanic isolation detection circuit 3 is used for detecting the flow direction of the current at the drain of the first P-type MOSFET S2 and the magnitude of the forward current.
One end of the reverse current detection circuit 4 is connected to the output end of the galvanic isolation detection circuit 3, the other end of the reverse current detection circuit 4 is connected to the driving circuit 1, and the reverse current detection circuit 4 is configured to control the output of the driving circuit 1 according to the flow direction of the current at the drain of the first P-type MOSFET S2 and the magnitude of the forward current.
Specifically, the detection of the reverse current can be realized by detecting a current signal through a current transformer, then converting the current signal into a voltage signal through a resistor, and conducting in the forward direction if the voltage signal is a positive value, or conducting in the reverse direction otherwise. Or the voltage signal is conducted in the positive direction when the voltage signal is negative, and otherwise, the voltage signal is conducted in the reverse direction. In addition, the detection of the reverse current can also be detected by a resistor directly or by other magnetic field induction circuits, but is not limited to this, and can be specifically adjusted according to different circuits.
Specifically, the reverse current detection circuit 4 controls the output of the driving circuit 1 according to the flowing direction of the current at the drain of the first P-type MOSFET S2 and the magnitude of the forward current, and specifically includes:
when the current at the drain of the first P-type MOSFET S2 flows from the drain of the first P-type MOSFET S2 to the source of the depletion-type power device S1, the reverse current detection circuit 4 generates an on signal for causing the drive circuit 1 to output a high level, and transmits it to the drive circuit 1.
When the forward current exceeds the current threshold, the reverse current detection circuit 4 generates a limit signal for limiting the output pulse width of the drive circuit 1 and sends the limit signal to the drive circuit 1.
Preferably, the direct drive circuit of the depletion mode power device S1 with low reverse conduction voltage drop further comprises a first resistor R1. One end of the first resistor R1 is connected between the capacitor C1 and the source of the depletion mode power device S1, and the other end of the first resistor R1 is connected between the output end of the supply voltage detection circuit 2 and the gate of the first P-type MOSFET S2.
Specifically, as shown in fig. 2, the supply voltage detection circuit includes: a zener diode D2, a first resistor R2, a first resistor R3, and a transistor S3.
Wherein the cathode of the zener diode D2 is connected to the supply voltage.
One end of the first resistor R2 is connected to the anode of the zener diode D2, and the other end of the first resistor R2 is connected to one end of the first resistor R3.
The other end of the first resistor R3 is connected with the ground of the power supply voltage.
The base of the transistor S3 is connected between the first resistor R2 and the first resistor R3; the collector of the triode S3 is connected with the gate of the first P-type MOSFET S2; the emitter of the transistor S3 is connected to ground of the supply voltage.
When the voltage across the first resistor R3 reaches 0.7V, the transistor S3 is turned on, the gates of the first P-type MOSFET S2 and the second P-type MOSFET S4 are pulled to ground, the voltage across the first resistor R1 is VCC, and the first P-type MOSFET S2 and the second P-type MOSFET S4 are turned on.
When the power supply voltage is lower than a certain set value, the triode S3 is in an off state, the voltage across the first resistor R1 is 0, that is, the gate-source voltage of the first P-type MOSFET S2 and the second P-type MOSFET S4 is 0, so that the first P-type MOSFET S2 and the second P-type MOSFET S4 are in an off state. Meanwhile, due to the action of the diode D1, the first P-type MOSFET S2 and the second P-type MOSFET S4 are equivalent to a cascade structure, and the Drain and the Source are in a high-impedance off state. Specifically, the set value is determined by the Zener diode D1 and the first resistor R2 and the first resistor R3.
When the power supply voltage rises to be larger than the set value, the triode S3 is turned on, the point F is pulled to be low, the voltage across the first resistor R1 is the power supply voltage, the gate-source voltage of the first P-type MOSFET S2 and the second P-type MOSFET S4 is-VCC, the first P-type MOSFET S2 and the second P-type MOSFET S4 are turned on, and the turning on and off of the first P-type MOSFET S2 is determined by the output OUT of the driving circuit 1. The supply voltage is directly connected through the turned-on second P-type MOSFET S4 and the source of the depletion mode power device S1 so the source of the depletion mode power device S1 is at the supply voltage level.
When the output OUT of the driving circuit 1 is at a high level, the gate of the depletion-mode power device S1 is at a high level VCC, so the gate-source voltage difference of the depletion-mode power device S1 is 0V, and the depletion-mode power device S1 is turned on. When the output of the driving circuit 1 is at low level 0, the gate of the depletion mode power device S1 is at low level 0V, and the gate-source voltage difference of the depletion mode power device S1 is-VCC (-VCC < Vth) Vth which is a threshold voltage, so the depletion mode power device S1 is turned off.
Therefore, the driving circuit can directly drive the depletion type power device, namely when the driving circuit directly drives the depletion type power device after the supply voltage is established, the output of the driving circuit is 0 level, the depletion type power device is switched off, and the depletion type power device is switched on when the output of the driving circuit is high level.
The invention can make the depletion type power device in a normally closed state and directly drive the depletion type power device, the depletion type power device is directly opened when the driving circuit outputs a high level, and the depletion type power device is turned off when the driving circuit outputs a low level, which is similar to the drive of a common Si MOSFET. Because the depletion type power device is directly driven, the driving speed is high, the driving loss is low, and the system switching loss is small. When the cascade-connected P-type MOSFET works, the cascade-connected P-type MOSFET is in a normally-on state, so that reverse recovery loss can not be generated, namely the overall reverse recovery charge is 0, and the reverse recovery loss is 0.
The reverse current isolation detection circuit is added, so that the reverse conduction current and the overlarge forward current can be detected, and the power tube is switched on or the pulse width of the power is limited correspondingly, so that the reverse conduction loss of the power tube is greatly reduced, and the overlarge forward current is limited.
Meanwhile, after the power supply voltage VCC of the driving circuit is established, the first P-type MOSFET is normally conductive in work, so that the problem that the capacitances of a depletion type power device and a low-voltage Silicon device are not matched does not exist.
As shown in fig. 3, the present invention also provides a sealing scheme: the driving circuit 1, the depletion type power device S1, the first P-type MOSFET S2, the supply voltage detection circuit 2, the second P-type MOSFET S4, the diode D1, the capacitor C1, the galvanic isolation detection circuit 3, the reverse current detection circuit 4, and the first resistor R1 are sealed together. The invention seals all parts into a whole, thereby forming a new power IC, and only 5 Pin pins are needed: PWM signal pin, VCC power supply pin, VCC ground signal pin, Drain pin and Source pin.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (7)
1. A direct drive circuit of a depletion mode power device with low reverse conduction voltage drop is characterized by comprising the following components: the power supply circuit comprises a driving circuit, a depletion type power device, a first P-type metal-oxide semiconductor field effect transistor (MOSFET), a power supply voltage detection circuit, a second P-type MOSFET, a diode, a capacitor, a current isolation detection circuit and a reverse current detection circuit;
the VCC end of the driving circuit is connected with a power supply voltage;
the grid electrode of the depletion type power device is connected with the output end of the driving circuit;
the source electrode of the first P-type MOSFET is connected with the source electrode of the depletion type power device;
the input end of the power supply voltage detection circuit is connected with the power supply voltage, and the output end of the power supply voltage detection circuit is connected with the grid electrode of the first P-type MOSFET;
the drain electrode of the second P-type MOSFET is connected with a power supply voltage, the gate electrode of the second P-type MOSFET is connected between the power supply voltage detection circuit and the gate electrode of the first P-type MOSFET, and the source electrode of the second P-type MOSFET is connected between the source electrode of the depletion type power device and the source electrode of the first P-type MOSFET;
the anode of the diode is connected between the output end of the driving circuit and the grid electrode of the depletion type power device, and the cathode of the diode is connected with the drain electrode of the first P type MOSFET;
one end of the capacitor is connected with the grounding end of the driving circuit, and the other end of the capacitor is connected between the source electrode of the depletion type power device and the source electrode of the first P-type MOSFET;
the input end of the current isolation detection circuit is connected with the drain electrode of the first P-type MOSFET in series, and the current isolation detection circuit is used for detecting the flow direction of current at the drain electrode of the first P-type MOSFET and the magnitude of forward current;
one end of the reverse current detection circuit is connected with the output end of the current isolation detection circuit, the other end of the reverse current detection circuit is connected with the driving circuit, and the reverse current detection circuit is used for controlling the output of the driving circuit according to the flow direction of current at the drain electrode of the first P-type MOSFET and the magnitude of forward current.
2. The direct drive circuit of a depletion mode power device with low reverse conduction voltage drop as claimed in claim 1, wherein said reverse current detection circuit controls the output of said driving circuit according to the flowing direction of the current at the drain of the first P-type MOSFET and the magnitude of the forward current, and specifically comprises:
when the current at the drain electrode of the first P type MOSFET flows from the drain electrode of the first P type MOSFET to the source electrode of the depletion type power device, the reverse current detection circuit generates a turn-on signal and sends the turn-on signal to the driving circuit, and the turn-on signal is used for enabling the driving circuit to output a high level;
when the forward current exceeds a current threshold value, the reverse current detection circuit generates a limiting signal and sends the limiting signal to the drive circuit, and the limiting signal is used for limiting the output pulse width of the drive circuit.
3. The direct drive circuit of the depletion mode power device with low reverse conduction voltage drop as claimed in claim 1, wherein the direct drive circuit of the depletion mode power device with low reverse conduction voltage drop further comprises a first resistor;
one end of the first resistor is connected between the capacitor and the source electrode of the depletion type power device, and the other end of the first resistor is connected between the output end of the power supply voltage detection circuit and the grid electrode of the first P type MOSFET.
4. The direct drive circuit of the depletion mode power device with low reverse conduction voltage drop as claimed in claim 1, wherein said supply voltage detection circuit comprises: the voltage stabilizing diode, the second resistor, the third resistor and the triode;
the cathode of the voltage stabilizing diode is connected with the power supply voltage;
one end of the second resistor is connected with the anode of the voltage stabilizing diode, and the other end of the second resistor is connected with one end of the third resistor;
the other end of the third resistor is connected with the ground of the power supply voltage;
the base electrode of the triode is connected between the second resistor and the third resistor; the collector of the triode is connected with the grid of the first P-type MOSFET; and the emitter of the triode is connected with the ground of the power supply voltage.
5. The direct drive circuit of the depletion mode power device with low reverse conduction voltage drop as claimed in claim 1, wherein the depletion mode power device is a depletion mode gallium nitride device.
6. The direct drive circuit of a low reverse conduction voltage drop depletion mode power device according to claim 1, wherein the depletion mode power device is a depletion mode silicon carbide device.
7. The direct drive circuit of the depletion mode power device with low reverse conduction voltage drop as claimed in claim 1, wherein said driving circuit, said depletion mode power device, said first P-type MOSFET, said supply voltage detection circuit, said second P-type MOSFET, said diode, said capacitor, said current isolation detection circuit, said reverse current detection circuit and said first resistor are sealed together.
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| CN202210060943.8A CN114421946B (en) | 2022-01-19 | 2022-01-19 | Direct drive circuit of depletion type power device with low reverse conduction voltage drop |
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| CN202210060943.8A CN114421946B (en) | 2022-01-19 | 2022-01-19 | Direct drive circuit of depletion type power device with low reverse conduction voltage drop |
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| CN114421946B CN114421946B (en) | 2024-07-02 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115996050A (en) * | 2023-03-23 | 2023-04-21 | 江苏能华微电子科技发展有限公司 | Depletion type GaN device direct-drive circuit |
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| CN114421946B (en) | 2024-07-02 |
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