CN115996050A - Depletion type GaN device direct-drive circuit - Google Patents
Depletion type GaN device direct-drive circuit Download PDFInfo
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- CN115996050A CN115996050A CN202310286190.7A CN202310286190A CN115996050A CN 115996050 A CN115996050 A CN 115996050A CN 202310286190 A CN202310286190 A CN 202310286190A CN 115996050 A CN115996050 A CN 115996050A
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- 230000002093 peripheral effect Effects 0.000 claims abstract description 10
- 238000001514 detection method Methods 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 12
- 230000009977 dual effect Effects 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 92
- 238000004806 packaging method and process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009459 flexible packaging Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a depletion type GaN power device direct drive circuit, which relates to the field of GaN device driving and comprises a driving chip, a driving circuit and at least one depletion type GaN power device; the driving chip is respectively connected with one end of the driving circuit, the source electrode of the depletion type GaN power device and the KS pin; the other end of the driving circuit is connected with the grid electrode of the depletion type GaN power device. The depletion type GaN power device direct-drive circuit has few peripheral circuits, simple circuit structure and easy and simple use by application engineers; the depletion type GaN power device can be packaged in various different forms, and can meet the requirement of high-power application; in addition, the circuit can easily realize the parallel connection of GaN power devices.
Description
Technical Field
The invention relates to the field of GaN device driving, in particular to a depletion type GaN device direct driving circuit.
Background
As a wide forbidden bandwidth semiconductor material, gaN (gallium nitride) has taken an important role in the field of third generation semiconductor chips. Since the forbidden bandwidth of GaN material is 3 times of Si (silicon) and the breakdown electric field is 10 times of Si, gaN power device has the remarkable advantages of fast switching speed, low on-resistance and small chip area, and the like, and the GaN power device has a great application prospect in the fields of industrial power supply and automobile electronics and gradually occupies some markets.
GaN power devices have two types, depletion (normally open) and enhancement (normally closed): the enhancement mode device has a narrow driving voltage range, generally requires a special driving IC for driving, and has relatively weak channel current capability and reliability, and is limited in some applications with higher reliability requirements; the depletion type GaN power device has strong current capability and high reliability, but the gate electrode needs to be turned off by applying negative pressure. While depletion type GaN power devices generally have two routes: one is to form a Cascode structure in a source electrode series enhanced low-voltage Si MOSFET, and control the on-off of GaN by driving the Si MOSFET; the other is to directly develop a circuit or IC with a negative-pressure driving function, directly driving a depletion type GaN device. The Casode structure solves the problem of negative pressure driving of a depletion type GaN device, and has stronger driving reliability and driving compatibility with a traditional high-voltage MOSFET because of directly driving a Si MOSFET, but the structure of up-and-down cascading of the depletion type GaN and the low-voltage Si MOSFET requires better parameter matching of two devices, and meanwhile, the excellent high-frequency characteristic of the GaN device is sacrificed to a certain extent; the depletion type GaN device directly driven perfectly keeps the advantages of high frequency characteristics such as high driving speed, small switching loss, high switching frequency and the like of the GaN device, and meanwhile, the driving range is wider, and the device reliability is higher. The depletion type GaN direct drive scheme is very suitable for industrial-grade and automobile-grade applications with high power and high reliability requirements.
The current depletion type GaN direct drive scheme mainly comprises two schemes, one is a TI scheme, as shown in figure 1; the other is the visual scheme, as shown in fig. 2. The TI scheme is a GaN sealing chip with more functions, and the chip integrates the functions of temperature detection, temperature protection, short circuit protection, overcurrent protection, under-voltage sealing and the like. The method converts positive voltage VDD into negative voltage VNEG through a Buck-Boost circuit positioned between VDD, BBSW, VNEG, so that the negative voltage is realized TO turn off the depletion type GaN device, the proposal needs TO externally add a Buck-Boost inductor between VDD and BBSW, is relatively complex TO use, is not easy TO accept by engineers and application markets, and meanwhile, the Buck-Boost switching circuit also worsens the EMI of the system, and IN terms of packaging, the proposal cannot adopt packages like TO247 (3 Pin/4 Pin), TO263 (3 Pin), TO220 (3 Pin), TOLL and the like which are suitable for high-power application because of ten pins like DRAIN/SOURCE/TEMP/RDRV/VDD/LDO 5V/FAULT/OC/IN/BBSW/VNEG. The scheme of Visic is that two pMOSs and a diode are sealed with depletion type GaN TO form a sealed device GaN, then negative pressure driving is carried out through a driving circuit formed by peripheral discrete devices, the peripheral driving circuit mainly comprises a voltage stabilizing tube D3, a triode Q3, capacitors C1 and C4 and a resistor R6, the sealed device GaN is provided with 7 pins of D/S/G/Com/Cp/EN/As, the discrete devices in the driving circuit are more complex, the external pins of the sealed device are more, the packaging mode of the sealed device is also not suitable for packaging of high power applications such As 247 (3 Pin/4 Pin), TO263 (3 Pin), TO220 (3 Pin), TOLL and the like, and the packaging is just selected TO be the largest in industrial level, automobile level and other applications.
Disclosure of Invention
The invention aims to provide a depletion type GaN device direct drive circuit so as to simplify a drive circuit of a depletion type GaN power device.
In order to achieve the above object, the present invention provides the following solutions:
a depletion type GaN power device direct drive circuit comprising: the driving circuit comprises a driving chip, a driving circuit and at least one depletion type GaN power device;
the driving chip comprises a driving unit, a starting VCC detection unit, a pMOS tube, a first diode, a second diode, a resistor and a capacitor;
the input end of the driving unit is connected with the peripheral equipment and is used for receiving the PWM signal;
the output end of the driving unit is respectively connected with the anode of the first diode and one end of the driving circuit; the cathode of the first diode is connected with the drain electrode of the pMOS tube; the source electrode of the pMOS tube is connected with the source electrode of the depletion type GaN power device;
the grounding end of the driving unit is connected with one end of the capacitor; the other end of the capacitor is respectively connected with one end of the resistor, the cathode of the second diode and a Kelvin Source pin of the depletion type GaN power device; the other end of the resistor is respectively connected with the output end of the starting VCC detection unit and the grid electrode of the pMOS tube; the anode of the second diode is connected with a signal source;
the power end of the driving unit and the power end of the starting VCC detection unit are connected with the signal source; the grounding end of the driving unit and the grounding end of the starting VCC detection unit are grounded;
and the other end of the driving circuit is connected with the grid electrode of the depletion type GaN power device.
Optionally, the driving circuit includes an on resistor; one end of the opening resistor is connected with the output end of the driving unit; and the other end of the opening resistor is connected with the grid electrode of the depletion type GaN power device.
Optionally, the driving circuit further comprises a turn-off resistor and a third diode;
the cathode of the third diode is connected with one end of the opening resistor; the positive electrode of the third diode is connected with one end of the turn-off resistor; the other end of the turn-off resistor is connected with the other end of the turn-on resistor.
Optionally, when the PWM signal is at a high level, the depletion GaN power device is driven to be turned on, and when the PWM signal is at a low level, the depletion GaN power device is driven to be turned off.
Optionally, the depletion mode GaN power device takes the form of a dual flat leadless package DFN, PQFN, TO, TO252, TO247-3L, TO247-4L, or TOLL.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the depletion type GaN power device direct drive circuit comprises a drive chip, a drive circuit and at least one depletion type GaN power device; the driving chip is respectively connected with one end of the driving circuit, the source electrode of the depletion type GaN power device and the KS pin; the other end of the driving circuit is connected with the grid electrode of the depletion type GaN power device. The depletion type GaN power device direct-drive circuit has few peripheral circuits, simple circuit structure and easy and simple use by application engineers; the depletion type GaN power device can be packaged in various different forms, and can meet the requirement of high-power application; in addition, the circuit can easily realize the parallel connection of GaN power devices.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a diagram of a prior art TI depletion GaN direct drive circuit;
FIG. 2 is a diagram of a prior art visual depletion GaN direct drive circuit;
FIG. 3 is a diagram of a depletion type GaN power device direct-drive circuit provided by the invention;
fig. 4 is a diagram of a direct-drive circuit of a depletion type GaN power device provided by the invention, which contains two depletion type GaN power devices connected in parallel.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide a depletion type GaN device direct drive circuit so as to simplify a drive circuit of a depletion type GaN power device.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
As shown in fig. 3, the depletion type GaN power device direct drive circuit of the present invention comprises: the driving circuit comprises a driving chip, a driving circuit and at least one depletion type GaN power device.
The driving chip comprises a driving unit, a starting VCC detection unit, a pMOS tube, a first diode, a second diode, a resistor and a capacitor.
And the input end of the driving unit is connected with the peripheral equipment and is used for receiving the PWM signal.
The output end of the driving unit is respectively connected with the anode of the first diode and one end of the driving circuit; the cathode of the first diode is connected with the drain electrode of the pMOS tube; and the source electrode of the pMOS tube is connected with the source electrode of the depletion type GaN power device.
The grounding end of the driving unit is connected with one end of the capacitor; the other end of the capacitor is respectively connected with one end of the resistor, the cathode of the second diode and a Kelvin Source pin of the depletion type GaN power device; the other end of the resistor is respectively connected with the output end of the starting VCC detection unit and the grid electrode of the pMOS tube; and the anode of the second diode is connected with a signal source.
The power end of the driving unit and the power end of the starting VCC detection unit are connected with the signal source; the grounding end of the driving unit and the grounding end of the starting VCC detection unit are grounded.
And the other end of the driving circuit is connected with the grid electrode of the depletion type GaN power device.
In practical applications, the function of the driving unit is to change the input PWM signal into a driving signal to control the switching of the depletion type GaN power device, when the input PWM signal is at a high level, the output terminal V (OUT-GND) of the driving unit is equal to VCC, and when the input PWM signal is at a low level, the output terminal V (OUT-GND) of the driving unit is equal to 0V; capacitor C 1 The function of (a) is to reduce the output voltage of the driving unit, and the capacitor C is during normal operation 1 The voltage at two ends is VCC, so that the driving signal output end V (DRV-KS) =V (OUT-GND) -VCC of the driving chip; thus, when the input PWM signal is at a high level, V (DRV-KS) = 0V, the depletion type GaN may be driven to be turned on, and when the input PWM signal is at a low level, V (DRV-KS) = -VCC, the negative voltage may drive the depletion type GaN to be turned off. The function of the start-up VCC detection unit is to turn off the pMOS tube (Q) during start-up 2 ) The establishment of the signal source VCC (from 0V to normal VCC) during the start-up process is time-consuming, and when the voltage of the signal source VCC is lower than a certain set value, the start-up VCC detection unit V (OUT-VCC) =0V, so that Q 2 The off state is maintained. When Q is 2 When turned off, the drain-Source voltage V (S_GaN-Source) is at high level, and V (DRV-KS) =V (DRV-S_GaN) =V (DRV-Source) +V (Source-S_GaN) =V (DRV-Source) -V (S_GaN-Source), wherein V (DRV-Source) is the first diode D 1 The forward voltage drop of (a) is generally small, and V (s_gan-Source) is high, so that the driving signal V (DRV-KS) of the depletion type GaN power device is negative, and the depletion type GaN power device is turned off during the start-up process. After completion of VCC establishment, V (OUT-GND) =0V, Q 2 The on state is kept all the time, and at this time, the on and off of the depletion type GaN device can be controlled through an externally input PWM signal, a driving unit and a driving circuit, so that the depletion type GaN power device is directly driven. The driving chip comprises a PWM input Pin (PWM), a VCC power input pin (VCC), a driving signal output pin (DRV), a Kelvin Source pin (KS), a depletion type GaN Source pin (S_GaN), a signal Ground (GND) and a Source pin (Source).
Further, the driving circuit comprises an on resistor, an off resistor and a third diode; one end of the opening resistor is connected with the output end of the driving unit; and the other end of the opening resistor is connected with the grid electrode of the depletion type GaN power device.
The cathode of the third diode is connected with one end of the opening resistor; the positive electrode of the third diode is connected with one end of the turn-off resistor; the other end of the turn-off resistor is connected with the other end of the turn-on resistor.
In practice, the driving circuit may include an on resistor R on A turn-off resistor R off A third diode D connected in series with the turn-off resistor 3 Or only one may beResistors R on (R off And D 3 Can be dispensed with), the function of the drive circuit being via a drive resistor (R on ，R off ) To control the turn-on or turn-off speed of the depletion type GaN device.
The depletion type GaN power device can take various package forms including DFN (double Flat No-lead package), PQFN, TO220, TO252, TO247-3L or TO247-4L, TOLL.
The depletion type GaN power device comprises a Gate pin (Gate), a Drain pin (Drain), a Source pin (S_GaN) and a Kelvin Source pin (KS), and the packaging forms can be packaging forms commonly used for power devices such as TO220, TO252, TO247-3L, TO247-4L, TOLL, DFN, PQFN, TO263 and the like. The depletion type GaN power device may include only the Gate pin (Gate), the Drain pin (Drain), and the Source pin (s_gan), and the Kelvin Source pin (KS) and the depletion type GaN Source pin (s_gan) of the driver chip may be connected to the Source pin (s_gan) of the depletion type GaN power device.
In the depletion type GaN power device direct drive circuit, if power device parallel connection is to be implemented, only Drain, gate, S _gan and KS (if any) of a plurality of depletion type GaN power devices are required to be connected in a one-to-one correspondence, and two depletion type GaN devices are used for parallel connection, for example, as shown in fig. 4. When the power devices are connected in parallel, only the depletion type GaN power device part is required to be connected in parallel, and the driving circuit and the driving chip can share one.
The direct driving of the depletion type GaN power device can be realized by using the driving chip of the depletion type GaN power device direct driving circuit. Has the following advantages:
1. compared with a depletion type GaN device with a Casode structure, which needs to have better parameter matching performance with a low-voltage Si MOSFET, the scheme of the invention completely avoids the problems, so that the device design and the selection are easier, and meanwhile, the advantages of high-frequency characteristics such as high driving speed, small switching loss, high switching frequency and the like of the GaN device are completely reserved. These advantages may allow products using GaN devices (e.g., fast charge, adapter, photovoltaic inverter, data center power, on-board DC-DC power, etc.) to be smaller, lighter in weight, more efficient, and more energy efficient.
2. Compared with the TI direct-drive depletion type GaN device scheme, the scheme does not need an external Buck-Boost inductor, the pins of a peripheral circuit are too few, the circuit is simple, and an application engineer can easily and simply use the device. There is no problem of the Buck-Boost switching circuit deteriorating the EMI of the system. In addition, in terms of packaging, the depletion-mode GaN device in the scheme of the invention can take various flexible packaging forms, including TO220, TO252, TO247-3L, TO247-4L, TOLL, DFN, PQFN, TO263 and the like which are suitable for high-power application.
3. In addition, when the power devices are applied in parallel, the TI and the visual direct drive scheme are required to be connected in parallel together by the integrated sealing devices, and because of more peripheral pins, the wiring on the PCB is complex in practice, the characteristics of the devices after parallel connection, such as the consistency of the on-off edges and the current sharing and temperature rising characteristics after parallel connection, cannot be ensured, and meanwhile, the cost of the integrated sealing devices connected in parallel together is high. The direct-drive depletion type GaN device scheme solves the problems, the depletion type GaN device is only required to be connected in parallel, so that peripheral pins of the device are few, actual PCB wiring is quite simple, the parallel connection characteristics of the device, such as consistency of an on-off edge and current sharing and temperature rising characteristics after parallel connection, can be ensured to a great extent, and the depletion type GaN device is only required to be connected in parallel, so that compared with the scheme of TI and Visic, the cost is lower when the direct-drive depletion type GaN device is used in parallel connection.
4. The invention can greatly expand the application scene of the depletion type GaN device, greatly demonstrate the advantages of the power GaN device in application, promote the popularization of the GaN device in the application with higher power level and higher reliability requirement, and accelerate the GaN device to enter the market of industrial-grade and automobile-grade application.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (5)
1. The utility model provides a depletion type GaN power device direct drive circuit which characterized in that includes: the driving circuit comprises a driving chip, a driving circuit and at least one depletion type GaN power device;
the driving chip comprises a driving unit, a starting VCC detection unit, a pMOS tube, a first diode, a second diode, a resistor and a capacitor;
the input end of the driving unit is connected with the peripheral equipment and is used for receiving the PWM signal;
the output end of the driving unit is respectively connected with the anode of the first diode and one end of the driving circuit; the cathode of the first diode is connected with the drain electrode of the pMOS tube; the source electrode of the pMOS tube is connected with the source electrode of the depletion type GaN power device;
the grounding end of the driving unit is connected with one end of the capacitor; the other end of the capacitor is respectively connected with one end of the resistor, the cathode of the second diode and a Kelvin Source pin of the depletion type GaN power device; the other end of the resistor is respectively connected with the output end of the starting VCC detection unit and the grid electrode of the pMOS tube; the anode of the second diode is connected with a signal source;
the power end of the driving unit and the power end of the starting VCC detection unit are connected with the signal source; the grounding end of the driving unit and the grounding end of the starting VCC detection unit are grounded;
and the other end of the driving circuit is connected with the grid electrode of the depletion type GaN power device.
2. The depletion GaN power device direct drive circuit of claim 1, wherein said drive circuit comprises an on-resistance; one end of the opening resistor is connected with the output end of the driving unit; and the other end of the opening resistor is connected with the grid electrode of the depletion type GaN power device.
3. The depletion GaN power device direct drive circuit of claim 2, further comprising a turn-off resistor and a third diode;
the cathode of the third diode is connected with one end of the opening resistor; the positive electrode of the third diode is connected with one end of the turn-off resistor; the other end of the turn-off resistor is connected with the other end of the turn-on resistor.
4. The direct drive circuit of a depletion GaN power device of claim 1, wherein the depletion GaN power device is driven on when the PWM signal is high and is driven off when the PWM signal is low.
5. The direct drive circuit of a depletion mode GaN power device of claim 1, wherein the depletion mode GaN power device takes the form of a dual flat lead free package DFN, PQFN, TO, TO252, TO247-3L, TO247-4L or a tol.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310286190.7A CN115996050A (en) | 2023-03-23 | 2023-03-23 | Depletion type GaN device direct-drive circuit |
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|---|---|---|---|
| CN202310286190.7A CN115996050A (en) | 2023-03-23 | 2023-03-23 | Depletion type GaN device direct-drive circuit |
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| CN115996050A true CN115996050A (en) | 2023-04-21 |
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| CN202310286190.7A Pending CN115996050A (en) | 2023-03-23 | 2023-03-23 | Depletion type GaN device direct-drive circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116614121A (en) * | 2023-07-19 | 2023-08-18 | 江苏能华微电子科技发展有限公司 | Power device for improving electromagnetic compatibility |
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| CN105356727A (en) * | 2015-11-27 | 2016-02-24 | 矽力杰半导体技术(杭州)有限公司 | Switching tube drive control method for switching power supply and control circuit |
| CN114400996A (en) * | 2021-11-30 | 2022-04-26 | 科能芯(深圳)半导体有限公司 | Direct drive circuit of depletion type power device |
| CN114421946A (en) * | 2022-01-19 | 2022-04-29 | 科能芯(深圳)半导体有限公司 | Direct drive circuit of depletion type power device with low reverse conduction voltage drop |
| CN114465458A (en) * | 2022-01-24 | 2022-05-10 | 北京绿能芯创电子科技有限公司 | GaN device parallel connection-based driving circuit, layout method and equipment |
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2023
- 2023-03-23 CN CN202310286190.7A patent/CN115996050A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105356727A (en) * | 2015-11-27 | 2016-02-24 | 矽力杰半导体技术(杭州)有限公司 | Switching tube drive control method for switching power supply and control circuit |
| CN114400996A (en) * | 2021-11-30 | 2022-04-26 | 科能芯(深圳)半导体有限公司 | Direct drive circuit of depletion type power device |
| CN114421946A (en) * | 2022-01-19 | 2022-04-29 | 科能芯(深圳)半导体有限公司 | Direct drive circuit of depletion type power device with low reverse conduction voltage drop |
| CN114465458A (en) * | 2022-01-24 | 2022-05-10 | 北京绿能芯创电子科技有限公司 | GaN device parallel connection-based driving circuit, layout method and equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116614121A (en) * | 2023-07-19 | 2023-08-18 | 江苏能华微电子科技发展有限公司 | Power device for improving electromagnetic compatibility |
| CN116614121B (en) * | 2023-07-19 | 2023-11-03 | 江苏能华微电子科技发展有限公司 | Power device for improving electromagnetic compatibility |
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