CN111800115A - Silicon IC-gallium nitride hybrid driving system - Google Patents
Silicon IC-gallium nitride hybrid driving system Download PDFInfo
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- CN111800115A CN111800115A CN202010669155.XA CN202010669155A CN111800115A CN 111800115 A CN111800115 A CN 111800115A CN 202010669155 A CN202010669155 A CN 202010669155A CN 111800115 A CN111800115 A CN 111800115A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 59
- 239000010703 silicon Substances 0.000 title claims abstract description 59
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 81
- 230000010354 integration Effects 0.000 claims abstract description 18
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 238000004806 packaging method and process Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 13
- 230000003071 parasitic effect Effects 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T90/00—Enabling technologies or technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02T90/10—Technologies relating to charging of electric vehicles
- Y02T90/16—Information or communication technologies improving the operation of electric vehicles
- Y02T90/167—Systems integrating technologies related to power network operation and communication or information technologies for supporting the interoperability of electric or hybrid vehicles, i.e. smartgrids as interface for battery charging of electric vehicles [EV] or hybrid vehicles [HEV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y04—INFORMATION OR COMMUNICATION TECHNOLOGIES HAVING AN IMPACT ON OTHER TECHNOLOGY AREAS
- Y04S—SYSTEMS INTEGRATING TECHNOLOGIES RELATED TO POWER NETWORK OPERATION, COMMUNICATION OR INFORMATION TECHNOLOGIES FOR IMPROVING THE ELECTRICAL POWER GENERATION, TRANSMISSION, DISTRIBUTION, MANAGEMENT OR USAGE, i.e. SMART GRIDS
- Y04S30/00—Systems supporting specific end-user applications in the sector of transportation
- Y04S30/10—Systems supporting the interoperability of electric or hybrid vehicles
- Y04S30/12—Remote or cooperative charging
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Abstract
The invention discloses a silicon IC-gallium nitride hybrid driving system, which comprises a driving module and a gallium nitride power device, wherein the driving module comprises a driving module and a power module; the driving module comprises a silicon IC type linear voltage reduction component and a gallium nitride monolithic integrated driving half-bridge component which are used for outputting preset voltage; the output end of the gallium nitride monolithic integration type driving half-bridge component is in signal connection with a gate electrode circuit of the gallium nitride power device, so that the conductivity of the gallium nitride power device is modulated in a charging and discharging mode; the silicon IC type linear voltage reduction assembly is connected with the gallium nitride monolithic integration type driving half-bridge assembly by wire bonding; the driving module and the gallium nitride power device are matched in a common packaging mode. The invention at least comprises the following advantages: the advantages of silicon IC flexibility, low cost and maturity are combined with the advantages of a gallium nitride monolithic integration half-bridge component to eliminate the parasitic parameters of a driving loop.
Description
Technical Field
The invention relates to the technical field of power electronics and power semiconductors, in particular to a silicon IC-gallium nitride hybrid driving system.
Background
The statements in this section merely provide background information related to the present disclosure and may not constitute prior art.
Gallium nitride, which is referred to as a representative material of the third generation semiconductor, has been mass-produced in the field of adapters with medium and small power, and is expected to fully replace silicon in some fields in the near future. However, the application of the gan power device requires a corresponding gate driving chip, and the common silicon power device driving chip cannot be directly applied to the gan power device because of different requirements on performance such as driving voltage and driving capability.
At present, gallium nitride power devices are mainly in two forms of discrete components and Integrated Circuits (ICs) with driving. The discrete components have good flexibility in design, but the parasitic parameters of an additional driving loop inevitably cause the driving loop to vibrate, so that the conversion efficiency is reduced and even the tube is exploded. There are two implementations of the tape drive integrated IC: the first approach is monolithic integration of gallium nitride, which uses monolithically integrated drive and power devices of gallium nitride (see fig. 1); another approach is to use a relatively mature silicon driver IC packaged with a gan power device (see fig. 2).
The existing monolithic integrated gallium nitride IC has low maturity of gallium nitride process technology, and lacks CMOS logic commonly used in a silicon analog circuit (the existing gallium nitride process does not have a P-type high electron mobility transistor (P-type HEMT), and only can use a mode of matching a depletion type HEMT and an enhancement type HEMT), so that the function of the gallium nitride monolithic integrated analog circuit is limited, some necessary functional units are lacked, and some complex protection and control circuits cannot be realized. Meanwhile, the current cost of monolithic integration of gan is high because the price of gan is far higher than that of silicon per unit area of wafer, and the current process node (minimum line width size) of gan is far larger than that of silicon.
Although the existing co-packaging mode utilizes the advantages of a mature silicon-based analog circuit, because a routing connection is needed between a silicon IC chip and a gallium nitride chip, parasitic inductance is still inevitable although the wire diameter is short. Particularly, when the output terminal bonding pad of the silicon IC chip or the gate electrode bonding pad of the gallium nitride device is not large enough and cannot be used for bonding thick copper wires/gold wires, the parasitic inductance brought by the bonding pad cannot be ignored.
It should be noted that the above background description is only for the sake of clarity and complete description of the technical solutions of the present invention and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the invention.
Disclosure of Invention
To overcome the drawbacks of the prior art, embodiments of the present invention provide a silicon IC-gallium nitride hybrid driving system that combines the advantages of silicon IC integrated circuit flexibility, low cost, maturity, and the benefits of a gallium nitride monolithically integrated half-bridge module to eliminate the parasitic parameters of the driving circuit.
The embodiment of the application discloses: a silicon IC-gallium nitride hybrid driving system comprises a driving module and a gallium nitride power device;
the driving module comprises a silicon IC type linear voltage reduction component and a gallium nitride monolithic integrated driving half-bridge component which are used for outputting preset voltage;
the output end of the gallium nitride monolithic integration type driving half-bridge component is in signal connection with a gate electrode circuit of the gallium nitride power device, so that the conductivity of the gallium nitride power device is modulated in a charging and discharging mode;
the silicon IC type linear voltage reduction assembly is connected with the gallium nitride monolithic integration type driving half-bridge assembly by wire bonding;
the driving module and the gallium nitride power device are matched in a common packaging mode.
Furthermore, the length of a connecting wire used for routing between the silicon IC type linear voltage reduction component and the gallium nitride monolithic integration type driving half-bridge component is less than 2 mm.
Furthermore, the driving module further comprises a silicon IC type under-voltage locking component in signal connection with the gallium nitride monolithic integrated driving half-bridge component.
Further, when the gate voltage of the gallium nitride power device is lower than the threshold voltage of the gallium nitride power device, the gallium nitride power device is in an off state; wherein the threshold voltage is between 1-2V.
Further, when the gate voltage of the gallium nitride power device is higher than the threshold voltage and reaches the preset working voltage of the gallium nitride power device, the gallium nitride power device is in a conducting state; wherein the preset voltage is between 5 and 7V.
Further, the gallium nitride integrated half-bridge assembly includes two half-bridge arranged semiconductor transistors.
Further, the substrate of the gallium nitride power device is made of silicon material.
Further, the wafer size of the gan integrated drive half-bridge and the gan power device are both 6 inches or 8 inches.
Further, the silicon IC type linear buck module is integrated on one chip, and the gallium nitride power device and the gallium nitride monolithic integration type driving half-bridge module are integrated on the other chip.
By means of the technical scheme, the invention has the following beneficial effects: the hybrid drive combines the advantages of flexibility, low cost and maturity of a silicon IC integrated circuit and the advantage of eliminating parasitic parameters of a drive circuit by a gallium nitride monolithic integrated half-bridge component; the advantage of doing so is that the last stage of driving half bridge is made by using the gallium nitride monolithic integration, eliminating the parasitic parameters of the driving loop between the driving module and the gallium nitride power device; and because the monolithic integrated form of gallium nitride is regarded as the half bridge of the drive of the final stage at the same time, the area of upper and lower tube that the same driving force needs is very small compared with silicon technology, can not influence the total cost of the gallium nitride power device.
In order to make the aforementioned and other objects, features and advantages of the invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a gan monolithically integrated driving and power device in the background of the present invention;
FIG. 2 is a schematic diagram of a silicon driver IC and a GaN power device according to the background art;
fig. 3 is a schematic structural diagram of a silicon IC-gan hybrid driving system according to an embodiment of the present invention.
Reference numerals of the above figures: 1. a silicon IC type linear voltage-reducing component; 2. a gallium nitride monolithic integration drive half-bridge assembly; 3. a gallium nitride power device; 4. an MOS tube; 5. a resistance; 6. an operational amplifier; 7. feeding a pipe; 8. and a lower pipe.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, in the description of the present invention, the terms "first", "second", and the like are used for descriptive purposes only and for distinguishing similar objects, and no precedence between the two is considered as indicating or implying relative importance. In addition, in the description of the present invention, "a plurality" means two or more unless otherwise specified.
Referring to fig. 3, the present embodiment discloses a silicon IC-gallium nitride hybrid driving system, which includes a driving module on the left side and a gallium nitride power device 3 on the right side. The driving module comprises a silicon IC type linear voltage reduction assembly 1 for outputting preset voltage, a plurality of driving protection functional assemblies and a gallium nitride monolithic integrated driving half-bridge assembly 2. It is worth noting that: the silicon IC type linear voltage reduction component 1 is integrated on one chip, and the gallium nitride power device 3 and the gallium nitride monolithic integration type driving half-bridge component are integrated on the other chip.
In this embodiment, the silicon IC type linear voltage-dropping component 1 is composed of a MOS transistor 4, an operational amplifier 6 and two resistors 5 connected in series; it is noted that the system comprises a plurality of other drive protection circuits that can cooperate with said silicon IC linear buck module 1. Since the input voltage required for the normal operation of the silicon IC type linear voltage-reducing component 1 is about 12V, and the operating voltage required for the gate of the gallium nitride power device 3 is about 5-7V, in this embodiment, the operating voltage is 6V. With the silicon IC type linear buck module 1(LDO) configuration, a higher input voltage can be more stably adjusted to a voltage range that can be used by the gallium nitride power device 3.
The basic principle of the silicon IC type linear voltage-reducing component 1 is that the input and output voltage is reduced between the drain and the source of the MOS transistor 4, and in order to stabilize the output voltage, the silicon IC type linear voltage-reducing component 1 further has a feedback detection function. Specifically, the two resistors 5 connected in series can realize the function of dividing the output voltage; preferably, by adjusting the resistance value of the resistor 5, an ideal output voltage value and a voltage value corresponding to the bandgap reference can be obtained, and by comparing the difference between the output voltage value and the voltage value, the operational amplifier 6 is used to realize automatic adjustment, thereby achieving the purpose of stabilizing the output voltage.
In this embodiment, the gan monolithic integrated half-bridge module 2 is implemented by gan monolithic integration, and replaces the last driving half-bridge (composed of two N-LDMOS) of the silicon IC driver, compared to the existing silicon IC driver in fig. 2, so that on one hand, parasitic parameters generated by a driving circuit between the gan monolithic integrated half-bridge module 2 and the gan power device 3 can be eliminated, and on the other hand, the area and cost of the chip where the silicon IC linear buck module 1 and the plurality of driving protection function modules are located can be greatly reduced. It should be noted that, compared to the silicon IC-type driving half bridge, the area of the upper and lower tubes 8 required by the gan monolithic driving half bridge 2 is very small under the same driving capability of the gan monolithic driving half bridge 2, which does not affect the area and the total cost of the chip on which the gan monolithic driving half bridge 2 is located.
In the above embodiment, the gan integrated half-bridge module includes two half-bridge semiconductor transistors, which are referred to as an upper tube 7 in the upper portion and a lower tube 8 in the lower portion, as shown in fig. 3.
In this embodiment, in the application of the off-line power supply, the gallium nitride power device 3 is mainly used as a main switch in the system, and has the advantages of a better high breakdown electric field, a lower on-resistance, a lower parasitic capacitance, and the like. The output end of the gan monolithic integrated driving half-bridge component 2 is in signal connection with the gate circuit of the gan power device 3, so as to modulate the conductivity of the gan power device 3 through charging and discharging.
In the above embodiment, when the gate voltage of the gan power device 3 is zero or lower than its threshold voltage (typically about 1.5V), the conductive channel between the drain and the source of the gan power device 3 is in an off state, has very large resistance, and can withstand a high voltage exceeding 650V.
When the external control signal is high, the output terminal of the driving module is at a high potential, and the driving module charges the gate of the gan power device 3. Specifically, a current flows from the upper tube 7 of the gan monolithic integrated drive half-bridge component 2 to the gate of the gan power device 3, so that the gate voltage of the gan power device 3 exceeds the threshold voltage and reaches the gate voltage (usually about 6V) required for normal operation, the gan power device 3 is turned on, and the resistance between the drain and the source becomes very small.
When the external control signal is low, the output end of the driving module is at a low potential, the lower tube 8 of the gallium nitride monolithic integration type driving half-bridge component 2 of the driving circuit is opened, the upper tube 7 is closed, and the current rapidly extracts charges from the gate electrode of the gallium nitride power device 3, so that the gate electrode voltage of the gallium nitride power device 3 is reduced; when the gate voltage of the gallium nitride power device 3 is reduced to be lower than the threshold voltage, the gallium nitride power device 3 is turned off, and the high impedance state is maintained from the drain to the gate, so that the gallium nitride power device can bear high voltage.
In this embodiment, the driving module and the gallium nitride power device 3 are cooperatively packaged together, that is, the driving module and the gallium nitride power device 3 are packaged together in a plastic package. At this moment, two of the hybrid drive system of the application adopt routing connection between the chips. The length of the connecting wire used for routing is very short, usually less than 2mm, the generated parasitic inductance is very small (-1 nH), the parasitic parameters caused by routing are greatly reduced, and meanwhile, the system design is facilitated.
The above arrangement combines the advantages of flexibility, maturity and low cost of a silicon IC type drive circuit and the advantages of low parasitic parameters of the gallium nitride monolithic drive integration, wherein the latter is realized by the gallium nitride monolithic integration design of the last stage of the drive module.
In this embodiment, the driving module further includes a silicon IC type under-voltage locking component in signal connection with the gan monolithic integrated driving half-bridge component 2. The silicon IC type under-voltage locking component has the function that when the voltage of a power supply is lower than a certain voltage value, a corresponding chip is closed for protecting a system. And when the power supply is higher than the preset voltage value, the power supply restarts to work. The driving module also comprises an active clamping component which is used for protecting a gate electrode of the follow-up gallium nitride power device 3 from being influenced by high voltage spike; the reason is that the gate voltage range of 3 devices of the enhancement mode gan power device is narrower than that of silicon or silicon carbide, and the gate voltage exceeding 8V can reduce the device life and even permanently damage the chip.
In this embodiment, the substrate of the gan power device 3 is made of a silicon material, wherein the wafer sizes of the gan monolithic integrated drive half-bridge module and the gan power device 3 are preferably 6 inches or 8 inches.
With respect to the hybrid drive system of the present application, its application fields may include:
1. consumer power products such as cell phone fast charge, adapters, PC power supplies, white appliances, etc.;
2. industrial power supplies such as server power supplies, communication power supplies, and the like;
3. an electric vehicle charger, a vehicle DC-DC converter, etc.
In these application fields, the efficiency of the system can be improved, the system volume is smaller, and simultaneously, the design of the circuit board is further simplified and parasitic parameters are reduced because a hybrid driving system is used.
The principle and the implementation mode of the invention are explained by applying specific embodiments in the invention, and the description of the embodiments is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (9)
1. A silicon IC-gallium nitride hybrid driving system is characterized by comprising a driving module and a gallium nitride power device;
the driving module comprises a silicon IC type linear voltage reduction component and a gallium nitride monolithic integrated driving half-bridge component which are used for outputting preset voltage;
the output end of the gallium nitride monolithic integration type driving half-bridge component is in signal connection with a gate electrode circuit of the gallium nitride power device, so that the conductivity of the gallium nitride power device is modulated in a charging and discharging mode;
the silicon IC type linear voltage reduction assembly is connected with the gallium nitride monolithic integration type driving half-bridge assembly by wire bonding;
the driving module and the gallium nitride power device are matched in a common packaging mode.
2. The silicon IC-gallium nitride hybrid driving system according to claim 1, wherein the length of the connection wire used for wire bonding between the silicon IC type linear buck module and the gallium nitride monolithic integrated drive half-bridge module is less than 2 mm.
3. The silicon IC-gallium nitride hybrid drive system of claim 1, wherein the drive module further comprises a silicon IC under-voltage deadlocking component in signal connection with the gallium nitride monolithic integrated drive half-bridge component.
4. The silicon IC-gallium nitride hybrid drive system according to claim 1, wherein the gallium nitride power device is in an off state when a gate voltage of the gallium nitride power device is below a threshold voltage thereof; wherein the threshold voltage is between 1-2V.
5. The silicon IC-gan hybrid drive system of claim 1, wherein the gan power device is in an on state when the gate voltage of the gan power device is above its threshold voltage and reaches a predetermined voltage for its operation; wherein the preset voltage is between 5 and 7V.
6. The silicon IC-gallium nitride hybrid drive system of claim 1, wherein the gallium nitride integrated half-bridge assembly comprises two half-bridge arranged gallium nitride semiconductor transistors.
7. The silicon IC-gallium nitride hybrid drive system according to claim 1, wherein the substrate of the gallium nitride power device is made of a silicon material.
8. The silicon IC-gallium nitride hybrid drive system of claim 1, wherein the wafer sizes of the gallium nitride integrated drive half bridge and the gallium nitride power device are both 6 inches or 8 inches.
9. The silicon IC-gallium nitride hybrid drive system of claim 1, wherein the silicon IC-based linear buck module is integrated on one chip, and the gallium nitride power device and the gallium nitride monolithically integrated drive half-bridge module are integrated on another chip.
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| CN202010669155.XA CN111800115A (en) | 2020-07-13 | 2020-07-13 | Silicon IC-gallium nitride hybrid driving system |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112531675A (en) * | 2020-12-10 | 2021-03-19 | 基合半导体（宁波）有限公司 | Drive chip and drive system |
| CN114783993A (en) * | 2022-05-18 | 2022-07-22 | 东科半导体(安徽)股份有限公司 | Half-bridge topology integration method and chip for sealing gallium nitride power device |
| CN117476631A (en) * | 2023-12-26 | 2024-01-30 | 广东仁懋电子有限公司 | Gallium nitride microwave power device |
| LU503046B1 (en) * | 2022-10-31 | 2024-04-30 | Cambridge Gan Devices Ltd | Stand-by circuit |
-
2020
- 2020-07-13 CN CN202010669155.XA patent/CN111800115A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112531675A (en) * | 2020-12-10 | 2021-03-19 | 基合半导体（宁波）有限公司 | Drive chip and drive system |
| CN114783993A (en) * | 2022-05-18 | 2022-07-22 | 东科半导体(安徽)股份有限公司 | Half-bridge topology integration method and chip for sealing gallium nitride power device |
| LU503046B1 (en) * | 2022-10-31 | 2024-04-30 | Cambridge Gan Devices Ltd | Stand-by circuit |
| CN117476631A (en) * | 2023-12-26 | 2024-01-30 | 广东仁懋电子有限公司 | Gallium nitride microwave power device |
| CN117476631B (en) * | 2023-12-26 | 2024-03-22 | 广东仁懋电子有限公司 | Gallium nitride microwave power device |
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