CN107946299B - Load switch and electronic equipment - Google Patents
Load switch and electronic equipment Download PDFInfo
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- CN107946299B CN107946299B CN201711338427.2A CN201711338427A CN107946299B CN 107946299 B CN107946299 B CN 107946299B CN 201711338427 A CN201711338427 A CN 201711338427A CN 107946299 B CN107946299 B CN 107946299B
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- 230000003071 parasitic effect Effects 0.000 claims description 7
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- 230000001052 transient effect Effects 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 19
- 238000010586 diagram Methods 0.000 description 7
- 230000005669 field effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
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- 239000003990 capacitor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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Abstract
The application provides a load switch and electronic equipment, wherein, load switch's first ESD protection branch road includes ESD device and the ESD unit that steps up, make the highest withstand voltage value of load switch's input improve the sum of breakdown voltage of ESD device and the conducting voltage of a plurality of second diodes through ESD device and a plurality of second diodes that concatenate, the first branch road and the second branch road of the ESD unit that step up simultaneously also provide switch unit input end positive ESD energy respectively, switch unit input end negative ESD energy and switch unit output end positive ESD energy release route, under the normal ESD protection's of guaranteeing to switch unit function's prerequisite, the highest withstand voltage value of switch unit's input and output has been promoted.
Description
Technical Field
The present application relates to the field of integrated circuit technologies, and more particularly, to a load switch and an electronic device.
Background
In an electronic system, a load switch (load switch) is generally used to connect or isolate two ports, for example, to cut off or connect power. The load switch may be integrated on the same IC (integrated circuit) as the control circuit, or may be a separate component. A MOSFET (Metal Oxide Semiconductor field effect Transistor) is a commonly used load switching element.
Referring to fig. 1, the MOS transistor and the gate control circuit IN fig. 1 form a switch unit, and IN order to improve an ESD (Electro-Static discharge) capability of the load switch, it is generally required to connect a grounded ESD device IN series to both the input terminal IN and the output terminal OUT of the MOS transistor Q1, so that electrostatic energy generated during transportation, use or production can be discharged through the ESD device, and the load switch and components connected to the load switch are prevented from being damaged by the electrostatic energy. The voltage at which the ESD device starts to turn on to generate protection is called breakdown voltage, in this case, the working voltage of the port of the load switch protected by the ESD device must be lower than the breakdown voltage, otherwise the normal working voltage of the port may burn the ESD device, so the breakdown voltage of the ESD device limits the maximum withstand voltage value of the port of the load switch, and when the maximum withstand voltage value of the load switch needs to be higher than the breakdown voltage of the ESD device, the load switch circuit shown in fig. 1 is difficult to meet the requirement.
Disclosure of Invention
In order to solve the technical problems, the invention provides a load switch and electronic equipment, so as to achieve the purpose of improving the highest voltage withstanding values of an input end and an output end of the load switch.
In order to achieve the technical purpose, the embodiment of the invention provides the following technical scheme:
a load switch, comprising: the ESD protection circuit comprises a switch unit, a first ESD protection branch circuit and a second ESD protection branch circuit; wherein the content of the first and second substances,
the switch unit comprises a first MOS tube and a grid control circuit electrically connected with the grid of the first MOS tube;
the first ESD protection branch circuit comprises an ESD device and a boost ESD unit which are connected in series, one end of the ESD device, far away from the boost ESD unit, is an input end of the first ESD protection branch circuit, the input end of the first ESD protection branch circuit is electrically connected with the input end of the switch unit, and one end of the boost ESD unit, far away from the ESD device, is grounded and is a grounding end of the first ESD protection branch circuit;
the boost ESD unit comprises a first branch circuit and a second branch circuit which are connected in parallel, the first branch circuit comprises a first diode, the conduction direction of the first diode points to the ESD device, the second branch circuit comprises a plurality of second diodes which are connected in series, and the conduction direction of the second diodes points to the grounding end of the first ESD protection branch circuit;
the input end of the second ESD protection branch circuit is electrically connected with the output end of the switch unit, the connection node of the second ESD protection branch circuit and the switch unit is the output end of the load switch, the output end of the second ESD protection branch circuit is grounded, and the second ESD protection branch circuit is used for providing a negative ESD energy discharge path of the output end of the load switch.
Optionally, the second ESD protection branch includes:
a second MOS transistor and a third MOS transistor;
or
A third diode and a fourth diode.
Optionally, when the second ESD protection branch includes: and when the second MOS tube and the third MOS tube are connected, the second MOS tube and the third MOS tube are both N-type MOS tubes or P-type MOS tubes.
Optionally, when the second MOS transistor and the third MOS transistor are both N-type MOS transistors;
the grid electrode of the second MOS tube is electrically connected with the grid electrode of the third MOS tube and is grounded, the drain electrode of the second MOS tube is the input end of the second ESD protection branch circuit, and the source electrode of the second MOS tube is electrically connected with the drain electrode of the third MOS tube;
and the source electrode of the third MOS tube is grounded.
Optionally, when the second MOS transistor and the third MOS transistor are both P-type MOS transistors;
the grid electrode of the second MOS tube is electrically connected with the grid electrode of the third MOS tube and is electrically connected with the source electrode of the second MOS tube to serve as the input end of the second ESD protection branch circuit, and the drain electrode of the second MOS tube is electrically connected with the source electrode of the third MOS tube;
and the drain electrode of the third MOS tube is grounded.
Optionally, when the second ESD protection branch includes a third diode and a fourth diode;
the third diode and the fourth diode are sequentially connected in series, the negative electrode of the third diode is used as the input end of the second ESD protection branch circuit, and the positive electrode of the fourth diode is grounded.
Optionally, the ESD device is a transient voltage suppressor or a varistor or a polymer ESD suppressor.
Optionally, when the first MOS transistor is an N-type MOS transistor, a drain of the first MOS transistor is an input end of the switch unit, and a source of the first MOS transistor is an output end of the switch unit;
when the first MOS tube is a P-type MOS tube, the drain electrode of the first MOS tube is the output end of the switch unit, and the source electrode of the first MOS tube is the input end of the switch unit.
An electronic device, comprising: a load switch as claimed in any preceding claim.
It can be seen from the foregoing technical solutions that, an embodiment of the present invention provides a load switch and an electronic device, where a first ESD protection branch of the load switch includes an ESD device and a boost ESD unit, a maximum withstand voltage value of an input terminal of the load switch is increased to a sum of a breakdown voltage of the ESD device and a conduction voltage of a plurality of second diodes through the ESD device and the plurality of second diodes connected in series, and meanwhile, a first branch and a second branch of the boost ESD unit also respectively provide a discharge path of a positive ESD energy at an input terminal of the switch unit, a negative ESD energy at an input terminal of the switch unit, and a positive ESD energy at an output terminal of the switch unit, and on the premise of ensuring a normal ESD protection function of the switch unit, the maximum withstand voltage values of the input terminal and the output terminal of the switch unit are increased.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic circuit diagram of a load switch in the prior art;
fig. 2 is a schematic circuit diagram of a load switch according to an embodiment of the present application;
fig. 3 is a schematic circuit diagram of a load switch according to another embodiment of the present application;
fig. 4 is a schematic diagram of an ESD energy discharge path of a load switch according to an embodiment of the present application;
fig. 5 is a schematic circuit diagram of a load switch according to another embodiment of the present application;
fig. 6 is a schematic circuit diagram of a load switch according to yet another embodiment of the present application;
fig. 7 is a schematic circuit diagram of a load switch according to a preferred embodiment of the present application.
Detailed Description
As described IN the background of the invention, IN order to improve the ESD (Electro-static discharge) capability of the load switch IN the prior art, it is generally required to connect an ESD device connected to ground IN series to both the input terminal IN and the output terminal OUT of the MOS transistor Q1, so that the electrostatic energy generated during transportation, use or production can be discharged through the ESD device, and the load switch and the components connected to the load switch are prevented from being damaged by the electrostatic energy. The voltage at which the ESD device starts to turn on to generate protection is called breakdown voltage, in this case, the working voltage of the port of the load switch protected by the ESD device must be lower than the breakdown voltage, otherwise the normal working voltage of the port may burn the ESD device, so the breakdown voltage of the ESD device limits the maximum withstand voltage value of the port of the load switch, and when the maximum withstand voltage value of the load switch needs to be higher than the breakdown voltage of the ESD device, the load switch circuit shown in fig. 1 is difficult to meet the requirement.
In view of this, an embodiment of the present application provides a load switch, including: the ESD protection circuit comprises a switch unit, a first ESD protection branch circuit and a second ESD protection branch circuit; wherein the content of the first and second substances,
the switch unit comprises a first MOS tube and a grid control circuit electrically connected with the grid of the first MOS tube;
the first ESD protection branch circuit comprises an ESD device and a boost ESD unit which are connected in series, one end of the ESD device, far away from the boost ESD unit, is an input end of the first ESD protection branch circuit, the input end of the first ESD protection branch circuit is electrically connected with the input end of the switch unit, and one end of the boost ESD unit, far away from the ESD device, is grounded and is a grounding end of the first ESD protection branch circuit;
the boost ESD unit comprises a first branch circuit and a second branch circuit which are connected in parallel, the first branch circuit comprises a first diode, the conduction direction of the first diode points to the ESD device, the second branch circuit comprises a plurality of second diodes which are connected in series, and the conduction direction of the second diodes points to the grounding end of the first ESD protection branch circuit;
the input end of the second ESD protection branch circuit is electrically connected with the output end of the switch unit, the connection node of the second ESD protection branch circuit and the switch unit is the output end of the load switch, the output end of the second ESD protection branch circuit is grounded, and the second ESD protection branch circuit is used for providing a negative ESD energy discharge path of the output end of the load switch.
The first ESD protection branch circuit of the load switch comprises an ESD device and a boosting ESD unit, the highest withstand voltage value of the input end of the load switch is increased to the sum of the breakdown voltage of the ESD device and the conduction voltage of the plurality of second diodes through the ESD device and the plurality of second diodes which are connected in series, meanwhile, the first branch circuit and the second branch circuit of the boosting ESD unit also respectively provide a discharge path of positive ESD energy of the input end of the switch unit, negative ESD energy of the input end of the switch unit and positive ESD energy of the output end of the switch unit, and on the premise of ensuring the normal ESD protection function of the switch unit, the highest withstand voltage values of the input end and the output end of the switch unit are increased.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present application provides a load switch, as shown in fig. 2, including: the ESD protection circuit comprises a switch unit, a first ESD protection branch circuit and a second ESD protection branch circuit; wherein the content of the first and second substances,
the switch unit comprises a first MOS tube and a grid control circuit electrically connected with the grid of the first MOS tube;
the first ESD protection branch circuit comprises an ESD device and a boost ESD unit which are connected in series, one end of the ESD device, far away from the boost ESD unit, is an input end of the first ESD protection branch circuit, the input end of the first ESD protection branch circuit is electrically connected with the input end of the switch unit, and one end of the boost ESD unit, far away from the ESD device, is grounded and is a grounding end of the first ESD protection branch circuit;
the boost ESD unit comprises a first branch circuit and a second branch circuit which are connected in parallel, the first branch circuit comprises a first diode, the conduction direction of the first diode points to the ESD device, the second branch circuit comprises a plurality of second diodes which are connected in series, and the conduction direction of the second diodes points to the grounding end of the first ESD protection branch circuit;
the input end of the second ESD protection branch circuit is electrically connected with the output end of the switch unit, the connection node of the second ESD protection branch circuit and the switch unit is the output end of the load switch, the output end of the second ESD protection branch circuit is grounded, and the second ESD protection branch circuit is used for providing a negative ESD energy discharge path of the output end of the load switch.
It should be noted that, after a Metal Oxide Semiconductor Field effect transistor (MOS transistor) is manufactured in an integrated circuit, a parasitic diode is formed between a source and a drain of the MOS transistor, and then, referring to fig. 3, a parasitic diode DM1 whose conducting direction is from an output end of a load switch to an input end of the load switch is formed between the source and the drain of the first MOS transistor, because the size of the first MOS transistor is generally large according to an application requirement of the load switch, an overcurrent capability of the parasitic diode DM1 is very strong, so in the load switch provided in the embodiment of the present application, a positive ESD energy at the output end of the load switch can be discharged through the parasitic diode DM1 and the first ESD protection branch.
Referring specifically to fig. 4, fig. 4 shows the input positive ESD energy, the output negative ESD energy, and the output positive ESD energy and the output negative ESD energy of the load switch. As can be seen from fig. 4, after the voltage of the positive ESD energy at the input terminal of the load switch reaches the sum of the breakdown voltage of the ESD device and the conducting voltage of the plurality of second diodes, the positive ESD energy is discharged from the input terminal of the load switch to the ground through the ESD device and the second branch of the boost ESD unit (a discharge path shown as I1 in fig. 4); after the voltage of the negative energy ESD at the input end of the load switch reaches the sum of the breakdown voltage of the ESD device and the conducting voltage of the first diode, the voltage of the negative energy ESD is discharged to the ground from the input end of the load switch through the ESD device and the first branch of the boost ESD unit (a discharge path shown as I2 in FIG. 4); after the voltage of the positive energy ESD at the output end of the load switch reaches the sum of the breakdown voltage of the ESD device and the conduction voltages of the plurality of second diodes, the voltage of the positive energy ESD is discharged to the ground from the output end of the load switch through the parasitic capacitor of the first MOS transistor, the ESD device and the second branch of the boost ESD unit (a discharge path shown as I3 in FIG. 4); after the voltage of the negative energy ESD at the output end of the load switch reaches the starting voltage of the second ESD protection branch, the voltage is discharged to the ground through the second ESD protection branch (a discharge path shown as I4 in FIG. 4).
It should be noted that the breakdown voltage of the second ESD protection branch needs to be higher, at least higher than the sum of the breakdown voltage of the ESD device and the turn-on voltage of the plurality of second diodes, because the second ESD protection branch cannot be broken down when the positive ESD energy at the output terminal of the load switch is discharged, so as to ensure that the second ESD protection branch can operate normally.
Through the analysis, the load switch enables the highest withstand voltage value of the input end of the load switch to be increased to the sum of the breakdown voltage of the ESD device and the conduction voltage of the second diodes through the ESD device and the second diodes which are connected in series, meanwhile, the first branch circuit and the second branch circuit of the boosting ESD unit respectively provide discharge paths of positive ESD energy of the input end of the switch unit, negative ESD energy of the input end of the switch unit and positive ESD energy of the output end of the switch unit, and on the premise that the normal ESD protection function of the switch unit is guaranteed, the highest withstand voltage values of the input end and the output end of the switch unit are increased.
Optionally, on the basis of meeting the above requirement, the second ESD protection branch may be implemented by two diodes, or may be implemented by two MOS transistors, and therefore, the second ESD protection branch may be implemented by a second MOS transistor and a third MOS transistor, or may be implemented by a third diode and a fourth diode.
When the second ESD protection branch is composed of a second MOS transistor and a third MOS transistor, the second MOS transistor and the third MOS transistor may be both N-type MOS transistors and P-type MOS transistors.
Referring to fig. 5, when the second MOS transistor and the third MOS transistor are both N-type MOS transistors;
the grid electrode of the second MOS tube is electrically connected with the grid electrode of the third MOS tube and is grounded, the drain electrode of the second MOS tube is the input end of the second ESD protection branch circuit, and the source electrode of the second MOS tube is electrically connected with the drain electrode of the third MOS tube;
and the source electrode of the third MOS tube is grounded.
Referring to fig. 6, when the second MOS transistor and the third MOS transistor are both P-type MOS transistors;
the grid electrode of the second MOS tube is electrically connected with the grid electrode of the third MOS tube and is electrically connected with the source electrode of the second MOS tube to serve as the input end of the second ESD protection branch circuit, and the drain electrode of the second MOS tube is electrically connected with the source electrode of the third MOS tube;
and the drain electrode of the third MOS tube is grounded.
Referring to fig. 7, when the second ESD protection branch is formed by a third diode and a fourth diode, the third diode and the fourth diode are sequentially connected in series, a cathode of the third diode is used as an input end of the second ESD protection branch, and an anode of the fourth diode is grounded.
On the basis of the above embodiments, in a specific embodiment of the present application, the first MOS transistor may be an N-type MOS transistor, or may also be a P-type MOS transistor; when the first MOS tube is an N-type MOS tube, the drain electrode of the first MOS tube is the input end of the switch unit, and the source electrode of the first MOS tube is the output end of the switch unit;
when the first MOS tube is a P-type MOS tube, the drain electrode of the first MOS tube is the output end of the switch unit, and the source electrode of the first MOS tube is the input end of the switch unit.
However, it should be noted that in practical applications, it is preferable to use an N-type MOS transistor as the first MOS transistor, because carrier mobility in the N-type MOS transistor is higher than that in the P-type MOS transistor, and thus, for a MOS transistor of the same size, the on-resistance of the N-type MOS transistor is lower than that of the P-type MOS transistor, which is more suitable for application in a load switch.
Optionally, the ESD device is a Transient Voltage Suppressor (TVS) or a varistor or polymer ESD Suppressor.
In the above embodiment, the first ESD protection branch of the load switch includes an ESD device and a boost ESD unit, the highest voltage withstanding value of the input terminal of the load switch is increased to the sum of the breakdown voltage of the ESD device and the conduction voltages of the plurality of second diodes by the ESD device and the plurality of second diodes connected in series, and meanwhile, the first branch and the second branch of the boost ESD unit also provide a discharge path for positive ESD energy at the input terminal of the switch unit, negative ESD energy at the input terminal of the switch unit, and positive ESD energy at the output terminal of the switch unit, so that the highest voltage withstanding values of the input terminal and the output terminal of the switch unit are increased on the premise of ensuring the normal ESD protection function of the switch unit.
Correspondingly, an embodiment of the present application further provides an electronic device, including the load switch according to any of the above embodiments.
To sum up, the embodiment of the present application provides a load switch and an electronic device, wherein, a first ESD protection branch of the load switch includes an ESD device and a boost ESD unit, a maximum withstand voltage value of an input terminal of the load switch is increased to a sum of a breakdown voltage of the ESD device and a conduction voltage of a plurality of second diodes through the ESD device and the plurality of second diodes connected in series, and meanwhile, a first branch and a second branch of the boost ESD unit also respectively provide a discharge path of a positive ESD energy of an input terminal of the switch unit, a negative ESD energy of the input terminal of the switch unit, and a positive ESD energy of an output terminal of the switch unit.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A load switch, comprising: the ESD protection circuit comprises a switch unit, a first ESD protection branch circuit and a second ESD protection branch circuit; wherein the content of the first and second substances,
the switch unit comprises a first MOS tube and a grid control circuit electrically connected with the grid of the first MOS tube, the first MOS tube comprises a parasitic diode, and the conduction direction of the parasitic diode is directed to the input end of the load switch from the output end of the load switch;
the first ESD protection branch circuit comprises an ESD device and a boost ESD unit which are connected in series, one end of the ESD device, far away from the boost ESD unit, is an input end of the first ESD protection branch circuit, the input end of the first ESD protection branch circuit is electrically connected with the input end of the switch unit, and one end of the boost ESD unit, far away from the ESD device, is grounded and is a grounding end of the first ESD protection branch circuit;
the boost ESD unit comprises a first branch circuit and a second branch circuit which are connected in parallel, the first branch circuit comprises a first diode, the conduction direction of the first diode points to the ESD device, the second branch circuit comprises a plurality of second diodes which are connected in series, and the conduction direction of the second diodes points to the grounding end of the first ESD protection branch circuit;
the input end of the second ESD protection branch circuit is electrically connected with the output end of the switch unit, the connection node of the second ESD protection branch circuit and the switch unit is the output end of the load switch, the output end of the second ESD protection branch circuit is grounded, and the second ESD protection branch circuit is used for providing a negative ESD energy discharge path of the output end of the load switch.
2. The load switch of claim 1, wherein the second ESD protection branch comprises:
a second MOS transistor and a third MOS transistor;
or
A third diode and a fourth diode.
3. The load switch of claim 2, wherein when the second ESD protection branch comprises: and when the second MOS tube and the third MOS tube are connected, the second MOS tube and the third MOS tube are both N-type MOS tubes or P-type MOS tubes.
4. The load switch according to claim 3, wherein when the second MOS transistor and the third MOS transistor are both N-type MOS transistors;
the grid electrode of the second MOS tube is electrically connected with the grid electrode of the third MOS tube and is grounded, the drain electrode of the second MOS tube is the input end of the second ESD protection branch circuit, and the source electrode of the second MOS tube is electrically connected with the drain electrode of the third MOS tube;
and the source electrode of the third MOS tube is grounded.
5. The load switch according to claim 3, wherein when the second MOS transistor and the third MOS transistor are both P-type MOS transistors;
the grid electrode of the second MOS tube is electrically connected with the grid electrode of the third MOS tube and is electrically connected with the source electrode of the second MOS tube to serve as the input end of the second ESD protection branch circuit, and the drain electrode of the second MOS tube is electrically connected with the source electrode of the third MOS tube;
and the drain electrode of the third MOS tube is grounded.
6. The load switch of claim 2, wherein when the second ESD protection branch comprises a third diode and a fourth diode;
the third diode and the fourth diode are sequentially connected in series, the negative electrode of the third diode is used as the input end of the second ESD protection branch circuit, and the positive electrode of the fourth diode is grounded.
7. The load switch of claim 1, wherein the ESD device is a transient voltage suppressor or a varistor or a polymer ESD suppressor.
8. The load switch according to claim 1, wherein when the first MOS transistor is an N-type MOS transistor, a drain of the first MOS transistor is an input terminal of the switch unit, and a source of the first MOS transistor is an output terminal of the switch unit;
when the first MOS tube is a P-type MOS tube, the drain electrode of the first MOS tube is the output end of the switch unit, and the source electrode of the first MOS tube is the input end of the switch unit.
9. An electronic device, comprising: the load switch of any of claims 1-8.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711338427.2A CN107946299B (en) | 2017-12-14 | 2017-12-14 | Load switch and electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711338427.2A CN107946299B (en) | 2017-12-14 | 2017-12-14 | Load switch and electronic equipment |
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| CN107946299A CN107946299A (en) | 2018-04-20 |
| CN107946299B true CN107946299B (en) | 2020-06-02 |
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| CN1381885A (en) * | 2001-04-13 | 2002-11-27 | 华邦电子股份有限公司 | I/O port with high voltage tolerance and electrostatic discharge protection circuit |
| CN101517671A (en) * | 2005-09-19 | 2009-08-26 | 加州大学评议会 | ESD protection circuits |
| CN1992495A (en) * | 2005-12-20 | 2007-07-04 | 国际整流器公司 | Input voltage sensing circuit |
| CN102231598A (en) * | 2011-06-08 | 2011-11-02 | 三一重工股份有限公司 | Power supply circuit |
| CN102820289A (en) * | 2011-06-10 | 2012-12-12 | 瑞鼎科技股份有限公司 | Electrostatic discharge protection circuit |
| CN202798624U (en) * | 2011-09-14 | 2013-03-13 | 快捷半导体(苏州)有限公司 | Load switch and load switch system |
| CN102957140A (en) * | 2012-09-13 | 2013-03-06 | 友达光电股份有限公司 | Electrostatic discharge protection circuit and display device thereof |
| CN103294251A (en) * | 2012-09-25 | 2013-09-11 | 上海天马微电子有限公司 | ESD protecting device for touch screen |
| CN106158849A (en) * | 2015-05-15 | 2016-11-23 | 美国亚德诺半导体公司 | ESD protection circuit for RF communication system |
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| CN107946299A (en) | 2018-04-20 |
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