CN204597470U - For reducing the circuit arrangement of overvoltage - Google Patents
For reducing the circuit arrangement of overvoltage Download PDFInfo
- Publication number
- CN204597470U CN204597470U CN201420874257.5U CN201420874257U CN204597470U CN 204597470 U CN204597470 U CN 204597470U CN 201420874257 U CN201420874257 U CN 201420874257U CN 204597470 U CN204597470 U CN 204597470U
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- China
- Prior art keywords
- voltage
- semiconductor switch
- zener
- diode
- terminals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
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- Electronic Switches (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
The utility model relates to the circuit arrangement for reducing overvoltage, has: with the first load wiring end, the second load wiring end and the semiconductor switch controlling terminals; At least two the first Zener diodes, the first diodes and the first Ohmic resistance being connected on the first load wiring end and controlling between terminals, wherein the first diode is connected to forward in the Zener voltage of at least two the first Zener diodes; And the electric capacity in parallel with one of at least two first Zener diodes.Discharge circuit is connected to the second load wiring end of semiconductor switch and controls between terminals or the auxiliary emitter electrode terminals of semiconductor switch and to control between terminals and to be configured to, and makes the voltage on electric capacity keep substantially constant and low as much as possible.
Description
Technical field
The utility model relates to a kind of circuit arrangement for reducing the overvoltage in overvoltage, particularly semiconductor switch.
Background technology
Due to the damage that overvoltage produces in semiconductor switch, known different protective circuit.In active protection wiring (Active Voltage Clamp (active voltage clamper)), such as Zener diode is connected with the load wiring end (collector electrode) of semiconductor switch at cathode side.Be in series with in anode-side the diode be connected in the Zener voltage of Zener diode with forward to be connected with Ohmic resistance and with the control terminals (grid) of semiconductor switch.According to the voltage of the maximum permission in circuit, replace an only Zener diode, the Zener diode of multiple series connection also can be set.If there is overvoltage, so conducting is also easily controlled semiconductor switch by Zener diode, and that is, the voltage be applied on semiconductor switch is restricted in the level of the puncture voltage of Zener diode.If overvoltage drops in the value of the summation being less than Zener voltage, so drop to zero-sum semiconductor switch by the electric current of Zener diode and turn off completely again.
If arrange the Zener diode of multiple series connection, so capacitor can be in parallel with one of Zener diode, so that the voltage peak that may occur when being also effectively limited in high-speed switch semiconductor switch.By also effectively limiting short potential pulse, semiconductor switch can be made close to its limit and also more effectively protected at this.But when switching semiconductor switch, this capacitor charges along with each turn off process.But the charging along with capacitor is worth below and constantly raises, the voltage be namely applied on semiconductor switch is limited in this value.The charging of capacitor can cause, and no longer obtains effective overvoltage protection.
In order to avoid capacitor charging known circuit arrangement, potential loop feedback negative in described circuit arrangement connects with Diode series between the grid of semiconductor switch and emitter (or auxiliary emitter electrode, English: auxiliary emitter).It can be that existed in application or additional potential loop feedback connects that potential loop feedback is connected on this.But such device can not all the time or can only realize on high cost ground.
Utility model content
Task of the present utility model is, provides a kind of circuit arrangement, in this circuit arrangement, avoid above-mentioned shortcoming.
This task is solved by device in a circuit according to the invention.
According to an embodiment, circuit arrangement has band first load wiring end, the second load wiring end and controls the semiconductor switch of terminals.The first Ohmic resistance that circuit arrangement has at least two the first Zener diodes, the first diode in addition and is connected on the first load wiring end and controls between terminals, wherein diode is connected in the Zener voltage of at least two the first Zener diodes with forward.Electric capacity is in parallel with one of at least two first Zener diodes.Discharge circuit is connected to the second load wiring end of semiconductor switch and controls between terminals or the auxiliary emitter electrode terminals of semiconductor switch and to control between terminals and to be configured to, and makes the voltage on electric capacity keep substantially constant.
Accompanying drawing explanation
By example shown in the accompanying drawings, the utility model is described in detail below.These diagrams are not necessarily in strict accordance with ratio and the utility model is not only confined to shown aspect.Or rather, it is important to note that the utility model based on principle.Wherein:
Fig. 1 illustrates a kind of for preventing the circuit arrangement of the overvoltage in semiconductor switch with circuit diagram;
Fig. 2 illustrates according to the different voltages in time in the circuit arrangement of Fig. 1 with time graph;
It is a kind of for preventing the circuit arrangement of the overvoltage in semiconductor switch that Fig. 3 illustrates according to an embodiment of the present utility model with circuit diagram;
Fig. 4 illustrates according to the different voltages in time in the circuit arrangement of Fig. 3 with time graph; And
With circuit diagram, Fig. 5 illustrates that another kind according to an embodiment of the present utility model is for preventing the circuit arrangement of the overvoltage in semiconductor switch.
Embodiment
With reference to accompanying drawing in specification below, in the drawing in order to diagram illustrates specific embodiment.Self-evident, the feature of different embodiments described herein can combine mutually, as long as no other explanation.
At Fig. 1, illustrate a kind of for preventing the circuit arrangement of the overvoltage in semiconductor switch 10 with circuit diagram.Semiconductor switch 10 constructs as IGBT (Insulated-Gate Bipolar Transistor (insulated gate bipolar transistor)) in this example and has the first load wiring end (collector electrode) C, the second load wiring end (emitter) E and control terminals (grid) G.Semiconductor switch 10 can have auxiliary emitter electrode terminals E' in addition.Semiconductor switch 10 can construct as IGBT as illustrated in fig. 1 or such as also can construct as MOSFET (metal-oxide-semiconductor field-effect transistor (mos field effect transistor)).At least two the first Zener diodes 31,32 ..., 3n is connected between collector electrode C and grid G.First Zener diode 31,32 ..., 3n series circuit be connected with collector electrode C at cathode side at this.First Zener diode 31,32 ..., be connected with the series circuit be made up of the first diode 50 and the first Ohmic resistance 60 between the series circuit of 3n and grid G.First diode 50 this to be connected to forward the first Zener diode 31,32, in the Zener voltage of 3n.
By the first terminals 20, the grid G of semiconductor switch 10 such as can be connected with control circuit (not shown in FIG).The second Ohmic resistance 70 can be connected with between the first Ohmic resistance 60 and the common node of grid G at the first terminals 20.The emitter E of semiconductor switch 10 is connected with the terminals for reference potential GND.In addition, auxiliary emitter electrode E' can be connected with the second terminals 21.
If there is overvoltage, so the first Zener diode 31,32 ..., 3n is by conducting and easily control semiconductor switch 10, that is, the voltage Vce be applied between the collector electrode C of semiconductor switch 10 and emitter E is limited on prespecified magnitude of voltage.Be applied to voltage Vce between collector electrode C and emitter E at this corresponding to the voltage be applied between collector electrode C and auxiliary emitter electrode E'.This magnitude of voltage pass through the first used Zener diode 31,32 ..., 3n determines.Such as, if this device have four first Zener diodes 31 with the puncture voltage of respectively 400V, 32 ... 3n, so voltage is limited on 4*400V=1600V.If cross drops, so by the first Zener diode 31,32 ..., 3n electric current decline and semiconductor switch 10 be turned off completely again.Under static state (do not have the switching process of semiconductor switch 10), this device effectively prevents overvoltage.But, when switching semiconductor switch 10, very short potential pulse can be there is.In this process fast, by the first Zener diode 31,32 ..., 3n no longer draws effective protection.
For this reason, electric capacity 40 and the first Zener diode 31,32 ..., one of 3n parallel connection.In this example, this is the first Zener diode 31.Under static state, electric capacity 40 does not affect device.If but there is voltage peak when switching semiconductor switch 10, so electric capacity 40 would represent the short circuit of the corresponding Zener diode 31 of bridge joint.Clamper (Clamping) is just reacted from lower voltage value thus.This lower magnitude of voltage be substantially equivalent to not with the first Zener diode 31 of Capacitance parallel connection, 32 ..., 3n-1 summation.In superincumbent example, be therefore 3*400V=1200V.Thus when of short duration voltage peak, also provide effective overvoltage protection.
Exemplarily illustrate according in the time plot in fig. 2 of the different voltage in the circuit arrangement of Fig. 1.Semiconductor switch 10 is connected by positive gate-emitter voltage Vge.Gate-emitter voltage Vge must higher than the so-called threshold voltage of semiconductor switch 10 in order to turn on this.In order to turn off semiconductor switch 10, grid G must be discharged into below threshold voltage.This is realized by the gate-emitter voltage Vge applying to bear usually.Therefore gate-emitter voltage Vge fluctuates between negative (semiconductor switch 10 turns off) and positive value (semiconductor switch 10 is connected).
If semiconductor switch 10 is turned off, so positive voltage Vce is applied between collector electrode C and emitter E (or auxiliary emitter electrode E').If connect semiconductor switch 10, so this voltage Vce gets back to (close) zero.Voltage Vce between collector electrode C and emitter E (or auxiliary emitter electrode E') is therefore along with gate-emitter voltage Vge changes.The voltage Vce of the collector electrode C in the value explanation semiconductor switch 10 of voltage V1 and maximum permission between emitter E (or auxiliary emitter electrode E'), so that this semiconductor switch is not damaged.The value that voltage V2 illustrates should limit voltage when there is voltage peak from this value.V2 be therefore equivalent to not have shunt capacitance the first Zener diode 31,32 ..., 3n the summation of puncture voltage.Clamper process is therefore from exceeding beginning voltage V2.But because circuit can not sufficiently rapidly be made a response to of short duration voltage peak, so proceed to the restriction of the reality in the value of voltage V1.
In this example, between collector electrode C and emitter E (or auxiliary emitter electrode E'), the voltage peak of voltage Vce is there is respectively when turning off semiconductor switch 10.Electric capacity 40 is along with each switching process continuation charging of semiconductor switch 10.Because the voltage Vce therefore on electric capacity 40 is along with each switching process raising of semiconductor switch 10, so the voltage peak of voltage Vce can reach value that is more and more higher, that be greater than voltage V1 and finally damages or damage semiconductor switch 10 between collector electrode C and emitter E (or auxiliary emitter electrode E').
In order to be restricted on magnitude of voltage V1 all the time by voltage Vce between collector electrode C and emitter E (or auxiliary emitter electrode E'), the circuit arrangement in figure 3 has discharge circuit 80.Discharge circuit 80 to be connected between the grid G of semiconductor switch 10 and auxiliary emitter electrode E' and to be configured to, and is discharged by capacitor 40 and therefore makes the voltage Vc on capacitor 40 keep substantially constant.Voltage Vc at this in addition can be as far as possible low, such as, be kept nearly 20V.The value of 20V such as corresponds to the numerical value of voltage on discharge circuit 80.Realize in this manner, the voltage Vce between collector electrode C and emitter E (or auxiliary emitter electrode E') is limited on magnitude of voltage V1 all the time.Therefore damage or the damage of semiconductor switch 10 can be avoided.
Discharge circuit 80 such as can have the series circuit be made up of the second diode 81 and the second Zener diode 82, as shown in FIG. 3.Second diode 81 is connected in the Zener voltage of the second Zener diode 82 with forward at this.Discharge circuit 80 shows as negative voltage source at this, and this negative voltage source causes the electric discharge of electric capacity 40.Second diode 81 and the second Zener diode 82 can realize as the device separated as shown in Figure 3 at this.But also it is possible that; arrange twin zener dioder 83, it is also referred to as TVS diode (transient voltage suppressor diode (transient voltage suppressor diode)) or surge protection diodes (Transildiode).The circuit arrangement that discharge circuit 80 has twin zener dioder 83 is exemplarily illustrated in Figure 5.In this embodiment, discharge circuit 80 is also as the work of negative voltage seedbed.Circuit arrangement shown in figure 3 has auxiliary emitter electrode E'.But circuit arrangement can not have auxiliary emitter electrode E' yet.If there is no auxiliary emitter electrode E', so emitter E can be connected with the second terminals 21 and discharge circuit 80 can be disposed between emitter E and grid G.Such circuit arrangement with the semiconductor switch 10 not with auxiliary emitter electrode E' is exemplarily shown in Figure 5.
Voltage according to the result in the circuit arrangement of Fig. 3 or 5 shown in Figure 4.Gate-emitter voltage Vge has with reference to the distribution that Fig. 2 describes.Voltage Vc on electric capacity 40 has voltage peak when each shutoff semiconductor switch 10.But the lasting raising of voltage Vc is stoped by discharge circuit 80.Voltage Vc substantially falls back to again in the value close to voltage on discharge circuit 80 after each voltage peak.When use has Zener diode 82 of the Zener voltage of 18V, the voltage Vc on electric capacity 40 such as falls back on about 20V.When use has second Zener diode 82 of other Zener voltage, the voltage Vc on electric capacity 40 correspondingly can have other voltage.Because voltage Vc does not continue to rise, be limited to all the time in the value of voltage V1 so realize collector emitter voltage Vce (or the voltage between collector electrode C and auxiliary emitter electrode E').
Claims (4)
1., for reducing the circuit arrangement of overvoltage, have:
With the first load wiring end (C), the second load wiring end (E) and the semiconductor switch (10) controlling terminals (G);
At least two the first Zener diodes (31,32,3n), the first diode (50) and the first Ohmic resistance (60) be connected between described first load wiring end (C) and described control terminals (G), in the Zener voltage of at least two the first Zener diodes described in wherein said first diode (50) is connected to forward (31,32,3n);
The electric capacity (40) in parallel with one of described at least two first Zener diodes (31,32,3n); With
Discharge circuit (80), described discharge circuit to be connected between the second load wiring end (E) of described semiconductor switch (10) and described control terminals (G) or to be configured between the auxiliary emitter electrode terminals (E') of described semiconductor switch (10) and described control terminals (G), makes the voltage (Vc) on electric capacity (40) keep substantially constant.
2. according to circuit arrangement according to claim 1, wherein said discharge circuit (80) has the second diode (81) and the second Zener diode (82), described second diode and described second Zener diode are connected between the second load wiring end (E) of described semiconductor switch (10) and described control terminals (G) or between the auxiliary emitter electrode terminals (E') of described semiconductor switch (10) and described control terminals (G), wherein said second diode (81) is connected in the Zener voltage of the second Zener diode (82) with forward.
3., according to circuit arrangement according to claim 2, wherein said discharge circuit (80) has twin zener dioder (83).
4., according to the circuit arrangement one of aforementioned claim Suo Shu, wherein said semiconductor switch (10) has MOSFET or IGBT.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE202014105631.9 | 2014-11-21 | ||
| DE201420105631 DE202014105631U1 (en) | 2014-11-21 | 2014-11-21 | Circuit arrangement for reducing overvoltages |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204597470U true CN204597470U (en) | 2015-08-26 |
Family
ID=52107779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420874257.5U Expired - Fee Related CN204597470U (en) | 2014-11-21 | 2014-12-02 | For reducing the circuit arrangement of overvoltage |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN204597470U (en) |
| DE (1) | DE202014105631U1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108633118A (en) * | 2017-03-16 | 2018-10-09 | 英飞凌科技股份有限公司 | It operates the method for transistor including protects the circuit and integrated circuit of driver |
| CN109995001A (en) * | 2018-01-02 | 2019-07-09 | 通用电气公司 | For protecting protection circuit and the guard method of controllable switch |
| CN110249528A (en) * | 2017-02-13 | 2019-09-17 | 罗伯特·博世有限公司 | For improving the circuit device and output stage of the floating voltage of inductive load |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115483818A (en) * | 2022-10-11 | 2022-12-16 | 南京南瑞继保电气有限公司 | Module overvoltage protection circuit |
-
2014
- 2014-11-21 DE DE201420105631 patent/DE202014105631U1/en not_active Expired - Lifetime
- 2014-12-02 CN CN201420874257.5U patent/CN204597470U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110249528A (en) * | 2017-02-13 | 2019-09-17 | 罗伯特·博世有限公司 | For improving the circuit device and output stage of the floating voltage of inductive load |
| CN108633118A (en) * | 2017-03-16 | 2018-10-09 | 英飞凌科技股份有限公司 | It operates the method for transistor including protects the circuit and integrated circuit of driver |
| CN108633118B (en) * | 2017-03-16 | 2021-05-11 | 英飞凌科技股份有限公司 | Method of operating a transistor, circuit comprising a protection driver and integrated circuit |
| CN109995001A (en) * | 2018-01-02 | 2019-07-09 | 通用电气公司 | For protecting protection circuit and the guard method of controllable switch |
Also Published As
| Publication number | Publication date |
|---|---|
| DE202014105631U1 (en) | 2014-12-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150826 Termination date: 20181202 |