CN113129836B - 用于有机发光二极管面板的电流积分器 - Google Patents
用于有机发光二极管面板的电流积分器 Download PDFInfo
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Abstract
本发明公开了一种电流积分器,用于一有机发光二极管面板。该电流积分器包括一运算放大器,其包括一输出级。该输出级耦接于该电流积分器的一输出端,且包括一第一输出晶体管、一第二输出晶体管、一第一堆叠晶体管及一第二堆叠晶体管。该第一堆叠晶体管耦接于该第一输出晶体管与该输出端之间,该第二堆叠晶体管耦接于该第二输出晶体管与该输出端之间。
Description
技术领域
本发明涉及一种电流积分器,尤其涉及一种可用于有机发光二极管(OrganicLight-Emitting Diode,OLED)面板的电流积分器。
背景技术
有机发光二极管(Organic Light-Emitting Diode,OLED)为发光二极管(Light-Emitting Diode,LED)的一种,其电致发光层是由有机化合物所构成,该有机化合物可因接收到电流而发光。有机发光二极管广泛应用于电子装置的显示屏,例如电视屏幕、计算机显示器、各类便携设备例如移动电话、手持式游戏主机及个人数字助理(Personal DigitalAssistant,PDA)等。其中,主动矩阵式有机发光二极管(Active Matrix OLED,AMOLED)为目前有机发光二极管显示器的主流,主动矩阵式有机发光二极管可由薄膜晶体管(Thin-FilmTransistor,TFT)来进行驱动,并包括存储电容用来维持像素的状态,以应用于大尺寸及高分辨率的显示器。
当有机发光二极管面板经过一段长时间的运作之后,在面板上不同像素之间,其部分参数(如薄膜晶体管的临界电压(threshold voltage))可能面临不同程度的衰减或变异。为了改善有机发光二极管面板的画面一致性,需针对以上参数的变化进行补偿,因此需要感测该些参数的特性以判断每一像素单元所需的补偿程度。一般来说,在感测过程中,有机发光二极管像素的衰减或变异信息可作为一电流信号被读出,其可通过电流积分器(current integrator)进行接收。
电流积分器通常包括一运算放大器。考虑运算放大器的稳定性问题,可在运算放大器的输出端设置一米勒补偿电容(Miller compensation capacitor)。在积分过程中,所接收的电流可对耦接于电流积分器输出端的任何电容进行充电,包括积分电容、米勒补偿电容、以及任何寄生电容。积分电容可用来存储积分信息,但积分电容可能在米勒补偿电容和其它寄生电容充满电荷之后才开始充电。换句话说,所接收的部分输入电流无法流入目标积分电容,导致电流积分器的输出信号出现误差。
上述问题可借由后端电路补偿积分结果来解决。然而,不同应用可能被设定具有不同积分时间,使得寄生电容造成不同比例的电荷或电流损失,导致电流积分器的输出信号上出现无法预测的误差。如此一来,将难以判断积分结果补偿所需的增益和偏移。
发明内容
因此,本发明的主要目的即在于提供一种可用于有机发光二极管(OrganicLight-Emitting Diode,OLED)面板的电流积分器,其输出结果能够免于受到运算放大器的寄生电容影响。
本发明的一实施例公开了一种电流积分器,用于一有机发光二极管面板。该电流积分器包括一运算放大器,其包括一输出级。该输出级耦接于该电流积分器的一输出端,且包括一第一输出晶体管、一第二输出晶体管、一第一堆叠晶体管及一第二堆叠晶体管。该第一堆叠晶体管耦接于该第一输出晶体管与该输出端之间,该第二堆叠晶体管耦接于该第二输出晶体管与该输出端之间。
附图说明
图1为本发明实施例一电流积分器的示意图。
图2为一般运算放大器的示意图。
图3为本发明实施例一运算放大器的示意图。
图4为一积分期间内流入电流积分器中的积分电容的电流波形图。
图5为本发明实施例另一运算放大器的示意图。
其中,附图标记说明如下:
10 电流积分器
100、200、300、500 运算放大器
102 模拟数字转换器
Cint 积分电容
SW_IN 输入开关器
SW_RST 重置开关器
IIN 输入电流信号
VOUT 输出信号
VREF 参考电压
I1、I2 输入级
G1 增益级
O1、O2 输出级
M1、M2 输出晶体管
Cgd1、Cgd2 米勒补偿电容
MS1、MS2 堆叠晶体管
VB1、VB2 偏置电压
T_IP 积分期间
具体实施方式
请参考图1,图1为本发明实施例一电流积分器10的示意图。如图1所示,电流积分器10包括一运算放大器100、一积分电容Cint、一输入开关器SW_IN及一重置开关器SW_RST。电流积分器10可用来接收来自于一有机发光二极管(Organic Light-Emitting Diode,OLED)面板的输入电流信号IIN,并且对输入电流信号IIN进行一段预定时间的积分。通过开关器SW_IN及SW_RST的切换电容操作,运算放大器100可在一阶段内进行重置,并且在另一阶段接收输入电流信号IIN,其中,对应于输入电流信号IIN的电荷被接收之后存储于积分电容Cint。其它可行的电路组件例如偏移消除电容和相关的耦合开关器等可能包括在电流积分器10中,为求简化,该些组件省略于图1。一模拟数字转换器(Analog-to-DigitalConverter,ADC)102未包括在电流积分器10中,但示于图1以说明运算放大器100的输出信号VOUT被传送到模拟数字转换器102以转换为数字数据。在一实施例中,模拟数字转换器102可耦接至多个电流积分器,用来依序从各电流积分器接收输出信号。
在一实施例中,运算放大器100可以是一差分放大器,其包括一差分输入级和一单端输出级。在差分输入级中,负输入端耦接于电流积分器10的输入端,用来接收输入电流信号IIN,而正输入端用来接收一参考电压VREF。运算放大器100的输出端耦接于电流积分器10的输出端,可用来输出输出信号VOUT至模拟数字转换器102。
请参考图2,图2为一般运算放大器200的示意图。运算放大器200可以是一AB类放大器(class-AB amplifier),其包括一输入级I1、一增益级G1及一输出级O1。输入级I1可用来接收输入电流信号IIN。在另一实施例中,输入级I1可整合到增益级G1中。输出级O1包括一高侧输出晶体管M1及一低侧输出晶体管M2。为了改善运算放大器200的稳定性,可在高侧输出晶体管M1及低侧输出晶体管M2的漏极端和栅极端之间分别设置米勒补偿电容Cgd1及Cgd2。
当运算放大器200作为电流积分器10中的运算放大器100时,米勒补偿电容Cgd1及Cgd2被视为积分操作上的寄生电容。如上所述,在考虑运算放大器200的稳定性之下,米勒补偿电容Cgd1及Cgd2的设置是有必要的,且米勒补偿电容Cgd1及Cgd2的尺寸须够大,以使稳定性达到良好的等级。在积分过程中,输入电流信号IIN的部分电荷被传送到米勒补偿电容Cgd1及Cgd2,造成积分电容Cint存储的电荷所对应的积分结果受到影响。换句话说,积分电容Cint中实际累积的电荷受到寄生电容(如米勒补偿电容Cgd1及Cgd2)的影响而下降,造成积分结果的误差。
为了解决此问题,本发明提供了一种用于电流积分器的运算放大器,其中,运算放大器的输出级可采用串叠式(cascode)结构来实现。请参考图3,图3为本发明实施例一运算放大器300的示意图。运算放大器300的电路结构类似于运算放大器200的电路结构,故功能相似的电路组件都以相同符号表示。如图3所示,运算放大器300与运算放大器200之间的差异在于,运算放大器300的输出级O2包括两个额外的堆叠晶体管MS1及MS2。高侧堆叠晶体管MS1耦接于高侧输出晶体管M1与运算放大器300的输出端(若运算放大器300作为电流积分器10中的运算放大器100时,也可视为电流积分器10的输出端)之间。低侧堆叠晶体管MS2耦接于低侧输出晶体管M2与运算放大器300的输出端之间。输出晶体管M1及M2和堆叠晶体管MS1及MS2组成输出级O2的串叠式结构。
在输出级O2中,高侧输出晶体管M1耦接于高侧堆叠晶体管MS1与电源供应端之间,低侧输出晶体管M2耦接于低侧堆叠晶体管MS2与接地端之间。一般来说,高侧输出晶体管M1及高侧堆叠晶体管MS1可以是P型金氧半场效晶体管(P-type Metal Oxide SemiconductorTransistor,PMOS Transistor),而低侧输出晶体管M2及低侧堆叠晶体管MS2可以是N型金氧半场效晶体管(N-type Metal Oxide Semiconductor Transistor,NMOS Transistor)。米勒补偿电容Cgd1耦接于高侧输出晶体管M1的栅极端与漏极端之间,米勒补偿电容Cgd2耦接于低侧输出晶体管M2的栅极端与漏极端之间,用来改善稳定性。高侧堆叠晶体管MS1的栅极端可接收适合的偏置电压VB1,而低侧堆叠晶体管MS2的栅极端可接收适合的偏置电压VB2,用以适应输出信号VOUT的电压电平。
在输出级O2的串叠式结构之下,堆叠晶体管MS1及MS2可分别将运算放大器300的输出端与米勒补偿电容Cgd1及Cgd2隔离。因此,若运算放大器300的串叠式结构实施于电流积分器10中的运算放大器100时,电流积分器10的输出端不直接耦接至米勒补偿电容Cgd1及Cgd2。在此情况下,无论积分结果使输出信号VOUT的电压电平出现任何变化,米勒补偿电容Cgd1或Cgd2的跨压都不会出现明显的改变,也就是说,输入电流信号IIN中仅少数电荷用来对米勒补偿电容Cgd1及Cgd2进行充电。如此一来,电流积分器10输出端的等效寄生电容可大幅降低。
请参考图4搭配图1所示,图4示出了当(无串叠式结构的)运算放大器200或(具有串叠式结构的)运算放大器300被使用的情况下,在一积分期间T_IP内流入电流积分器10中的积分电容Cint的电流波形图。流入积分电容Cint的电流代表输入电流信号IIN被积分并存储在积分电容Cint的部分。在此例中,输入电流信号IIN等于0.5μA。如图4所示,当使用具有串叠式输出级的运算放大器300时,流入积分电容Cint的电流快速到达0.5μA,即,在此积分期间T_IP内,对应于输入电流信号IIN的电荷大多数被积分电容Cint接收并存储在积分电容Cint中。相较之下,当使用没有串叠式输出级的运算放大器200时,流入积分电容Cint的电流缓慢地上升,且直到积分期间T_IP结束仍未达到稳态,即,在此积分期间T_IP内,对应于输入电流信号IIN的大量电荷被传送至寄生电容(如米勒补偿电容Cgd1及Cgd2)进行充电。
值得注意的是,本发明的目的在于提供一种可用于有机发光二极管面板的电流积分器,其中,电流积分器可用来接收来自于有机发光二极管面板的电流以进行参数补偿,电流积分器所包括的运算放大器具有串叠式输出级。本领域技术人员当可据此进行修饰或变化,而不限于此。举例来说,运算放大器的电路结构不限于本说明书所描述的结构。只要运算放大器的输出级耦接至电流积分器的输出端,且运算放大器的输出级采用串叠式结构,任何类型的运算放大器都属于本发明的范畴。
请参考图5,图5为本发明实施例另一运算放大器500的示意图。运算放大器500的电路结构类似于运算放大器300的电路结构,故功能相似的电路组件都以相同符号表示。如图5所示,运算放大器500与运算放大器300之间的差异在于,运算放大器300的输入级I1是由差分P型金氧半场效晶体管所组成,而运算放大器500的输入级I2是由差分N型金氧半场效晶体管所组成。在另一实施例中,本发明的运算放大器还可包括多于一组输入差分对,且/或输入级可整合到增益级中。
综上所述,本发明提供了一种可用于有机发光二极管面板的电流积分器。电流积分器可从有机发光二极管面板接收电流,以取得有机发光二极管面板的补偿信息。在电流积分器所包括的运算放大器中,其输出级具有串叠式结构,串叠式输出级可将米勒补偿电容与电流积分器的输出端隔离,因此,进行积分并存入积分电容的电流较不易受到米勒补偿电容的影响。如此一来,只需要在运算放大器的输出级中加入两个堆叠晶体管而形成串叠式结构,即可改善电流积分的效率,也就是说,无须增加过多额外的电路成本即可获得大幅度的改善。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (6)
1.一种电流积分器,用于一有机发光二极管面板,该电流积分器包括一运算放大器,该运算放大器包括:
一输出级,耦接于该电流积分器的一输出端,该输出级包括:
一第一输出晶体管;
一第二输出晶体管;
一第一堆叠晶体管,耦接于该第一输出晶体管与该输出端之间;以及
一第二堆叠晶体管,耦接于该第二输出晶体管与该输出端之间;
其中,该电流积分器用来接收来自于该有机发光二极管面板的电流信号,
并且对该电流信号进行积分。
2.如权利要求1所述的电流积分器,其特征在于,该第一输出晶体管耦接于该第一堆叠晶体管与一电源供应端之间,该第二输出晶体管耦接于该第二堆叠晶体管与一接地端之间。
3.如权利要求1所述的电流积分器,其特征在于,该输出级还包括:
一第一补偿电容,耦接于该第一输出晶体管的一栅极端与该第一输出晶体管的一漏极端之间;以及
一第二补偿电容,耦接于该第二输出晶体管的一栅极端与该第二输出晶体管的一漏极端之间。
4.如权利要求3所述的电流积分器,其特征在于,该第一堆叠晶体管用来隔离该电流积分器的该输出端与该第一补偿电容,该第二堆叠晶体管用来隔离该电流积分器的该输出端与该第二补偿电容。
5.如权利要求1所述的电流积分器,其特征在于,该第一堆叠晶体管及该第二堆叠晶体管分别通过一栅极端接收一偏置电压。
6.如权利要求1所述的电流积分器,其特征在于,该第一输出晶体管及该第一堆叠晶体管为P型金氧半场效晶体管,该第二输出晶体管及该第二堆叠晶体管为N型金氧半场效晶体管。
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