CN113097113A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

Info

Publication number
CN113097113A
CN113097113A CN202011201480.XA CN202011201480A CN113097113A CN 113097113 A CN113097113 A CN 113097113A CN 202011201480 A CN202011201480 A CN 202011201480A CN 113097113 A CN113097113 A CN 113097113A
Authority
CN
China
Prior art keywords
substrate
turntable
chamber
chambers
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202011201480.XA
Other languages
Chinese (zh)
Other versions
CN113097113B (en
Inventor
吴俊昊
朴永秀
柳守烈
金学杜
孙侐主
朴商弼
许成壹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
System Technology
Original Assignee
System Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by System Technology filed Critical System Technology
Publication of CN113097113A publication Critical patent/CN113097113A/en
Application granted granted Critical
Publication of CN113097113B publication Critical patent/CN113097113B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775—Docking arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention aims to provide a substrate processing device which can stably transfer a substrate among a plurality of chambers. The substrate processing apparatus according to the present invention for achieving the above object includes: a plurality of chambers arranged at predetermined intervals in a circumferential direction for processing a substrate; a turntable configured to rotate in order to transfer the substrate between the plurality of chambers, wherein at least one chamber of the plurality of chambers is provided with a stage on which the substrate is seated and a stage driving part providing a driving force for elevating the stage in an up-down direction, the turntable comprising: a turntable main body which is lifted and rotated by a turntable driving part; an annular turntable ring provided to be detachable from the turntable body in a state of being seated on the turntable body.

Description

Substrate processing apparatus
Technical Field
The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of stably transferring a substrate.
Background
In general, in a semiconductor process, a substrate processing process is performed under various conditions such as heating or cooling a substrate in a chamber isolated from the outside, and a substrate processing apparatus for performing the substrate processing process is being developed.
The substrate processing apparatus arranges a plurality of chambers in a circular shape, and is provided with a turntable for transferring substrates between the chambers in order to sequentially transfer the substrates loaded in the chambers to the respective chambers.
Such a conventional substrate processing apparatus is described in detail in korean patent laid-open publication No. 10-1796647.
The turntable described in the related art includes a plurality of radially formed arms and a substrate support portion for supporting a substrate on a bottom surface of an end portion of the arms.
However, the turntable having such a configuration has a problem that it becomes unstable during the transfer of the substrate by the turntable.
Disclosure of Invention
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a substrate processing apparatus capable of stably transferring a substrate between a plurality of chambers.
The substrate processing apparatus according to the present invention for achieving the above object includes: a plurality of chambers arranged at predetermined intervals in a circumferential direction for processing a substrate; a turntable configured to rotate in order to transfer the substrate between the plurality of chambers, at least one of the plurality of chambers being provided with a stage on which the substrate is seated and a stage driving part providing a driving force for elevating and lowering the stage in an up-down direction, the turntable comprising: a turntable main body which is lifted and rotated by a turntable driving part; an annular turntable ring provided to be detachable from the turntable body in a state of being seated on the turntable body.
A first chamber, among the plurality of chambers, for loading and unloading the substrate includes a first space at an upper portion for loading and unloading the substrate and a second space formed at a lower portion of the first space, and the loading and unloading of the substrate is performed in a state where the first space and the second space are separated from each other, and if the stage and the turntable ring are moved upward together by the stage driving part, the first space and the second space may be separated by the turntable ring being closely attached to a thin plate portion provided at a boundary of the first space and the second space.
A ring separating member may be provided to apply a downward force to the turntable ring when the stage is lowered by the stage driving part in a state where the turntable ring is closely attached to the thin plate part.
The ring separating member may have a lower end portion penetrating the thin portion in the vertical direction, and the penetrating lower end portion may be in contact with an upper surface of the turntable ring to apply the downward force.
A first sealing member for maintaining airtightness is provided between the upper surface of the turntable ring and the thin plate portion, and a second sealing member for maintaining airtightness may be provided between the bottom surface of the turntable ring and the edge position portion upper surface of the stage.
The plurality of chambers includes: a first chamber to perform loading and unloading of the substrate; and a plurality of thermal processing chambers for transferring the substrates loaded in the first chamber and sequentially performing thermal processing on the substrates loaded in the first chamber, wherein the substrates thermally processed in the plurality of thermal processing chambers may be transferred to the first chamber and cooled and then unloaded.
Each of the plurality of thermal processing chambers may be provided with a partition wall that moves to isolate or communicate an inner space of each chamber from or with a space of another chamber during processing of the substrate transferred to the inner space of the respective chamber.
The partition wall is provided to be lifted up and down, the partition wall is lowered to be coupled to an upper surface of the turntable ring in each of the plurality of heat treatment chambers, and a bottom surface of the turntable ring is in contact with and supported by a turntable ring support portion.
According to the present invention, the turntable ring is provided so as to be separable from the turntable body, and the substrate is transferred in a state in which the substrate is supported by the turntable ring, so that the substrate can be stably transferred.
Further, it is possible to prevent the turntable ring provided in the chamber for loading and unloading the substrate from adhering to the sheet portion.
Drawings
Fig. 1 is a plan view showing a substrate processing apparatus according to the present invention.
Fig. 2 is a perspective view showing an internal structure of each chamber in the substrate processing apparatus according to the present invention.
Fig. 3 (a) and (b) are perspective views showing the turntable of the present invention.
Fig. 4 is a sectional view showing a state in which the substrate is supported by the lift pins in a state in which the first space and the second space are separated in the substrate processing apparatus according to the present invention.
Fig. 5 is a sectional view showing a state in which the lift pins are lowered and the substrate is seated on the upper surface of the stage in the state of fig. 4.
Fig. 6 is a sectional view showing a state where the platform and the lift pins are lowered to a position where the turntable ring is seated on the turntable body in the state of fig. 5.
Fig. 7 is a sectional view showing a state in which the turntable is raised in the state of fig. 6, and the substrate is spaced apart from the upper surface of the stage.
Fig. 8 is a sectional view showing a state in which the turntable is rotated in the state of fig. 7, and the substrate of the first chamber is transferred to the second chamber.
Fig. 9 is a sectional view illustrating a state in which the substrate of the second chamber is seated on the upper surface of the stage in the state of fig. 8.
Fig. 10 is a view showing a state in which the first space and the second space in the first chamber are separated, and showing a state in which the internal space of the second chamber in the second chamber is separated from the internal spaces of the other chambers by the partition wall.
Description of reference numerals:
1: substrate processing apparatus 2: equipment front end module
2 a: substrate loading unit 2 b: substrate transfer unit
20: turntable ring support 100: the first chamber
100 a: upper chamber 100 b: lower chamber
100 c: sheet portion 101: inner wall
110. 210, 310, 410, 510: the platform 120: ring separating member
160: the lift pin 171: first seal member
172: second seal member 200: second chamber
271: third seal member 300: third chamber
400: fourth chamber 500: the fifth chamber
600: the rotating disk 610: rotary disc main body
620: opening 630: rotating disc ring
640: substrate support pin 700: partition wall
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1 to 3, a substrate processing apparatus 1 of the present invention includes: : a plurality of chambers 100, 200, 300, 400, 500 arranged at predetermined intervals in a circumferential direction for processing a substrate; a turntable 600 configured to rotate for transferring the substrate between the plurality of chambers 100, 200, 300, 400, 500; a control section (not shown) for controlling the configuration of the substrate processing apparatus 1 including the turntable 600.
In the substrate processing apparatus 1 of the present invention, the reflow process can be performed, for example. In the substrate processing apparatus 1 according to the present invention, the step using heat may be performed without performing the reflow step.
The plurality of chambers 100, 200, 300, 400, 500 may include: a first chamber 100 for performing loading and unloading of the substrate; a second chamber 200, a third chamber 300, and a fourth chamber 400 for heating and thermally treating the substrate loaded in the first chamber 100; a fifth chamber 500 cooling the substrate heat-treated in the fourth chamber 400.
The loading and unloading of the substrate in the first chamber 100 may be performed, and the substrate heat-treated by passing through the second, third, fourth and fifth chambers 200, 300, 400 and 500 in sequence may be cooled. The second, third, fourth, and fifth chambers 200, 300, 400, and 500 may perform a process accompanied by a heat treatment of a substrate, thereby performing a function as a heat treatment chamber.
The fifth chamber 500 may be configured to perform a cooling process before the first chamber 100 is cooled. At this time, the fifth chamber 500 may be configured to be equipped with a heater to heat the substrate, but the substrate is cooled by setting the heating temperature of the substrate to be lower than the temperature at which the substrate is heated in the fourth chamber 400.
An Equipment Front End Module 2 (EFFM) is connected to one side of the first chamber 100.
The device front-end module 2 has the following functions: the unprocessed substrates loaded on the substrate loading portion 2a are loaded into the first chamber 100 of the substrate processing apparatus 1 by a transfer robot (not shown) provided in the substrate transfer portion 2b, or the substrates that have been processed in the substrate processing apparatus 1 are unloaded from the first chamber 100 and loaded on the substrate loading portion 2 a.
The temperature of the substrates heated in the second, third, fourth, and fifth chambers 200, 300, 400, and 500 may be set to 100 to 450 ℃. Also, the second, third, fourth, and fifth chambers 200, 300, 400, and 500 may be respectively equipped with heaters that generate heat in order to heat the substrate. The shape and size of the heater may be variously changed, and the heaters may be respectively provided at the upper and lower portions of the substrate.
The first chamber 100, the second chamber 200, the third chamber 300, the fourth chamber 400, and the fifth chamber 500 may be respectively equipped with stages 110, 210, 310, 410, 510. A substrate is seated on an upper surface of the stage 110 of the first chamber 100 and may be cooled by a cooling unit. The stages 210, 310, 410, 510 of the remaining chambers 200, 300, 400, 500 except for the stage 110 of the first chamber 100 are provided with heaters so that a process of applying heat to a substrate may be performed.
A main body housing 10 is provided, the main body housing 10 surrounding the entire outer sides of the first chamber 100, the second chamber 200, the third chamber 300, the fourth chamber 400, the fifth chamber 500, and the turntable 600, and having a function of a support frame capable of disposing the respective components.
The turntable 600 includes: a turntable main body 610 rotated by a turntable driving part (not shown); a plurality of openings 620 penetrating the turntable main body 610 and formed along a circumferential periphery in a number corresponding to the plurality of chambers 100, 200, 300, 400, 500; an annular dial ring 630 is provided to be supported and installed at an edge of each of the opening portions 620 so as to be separable from the dial body 610.
The turntable driving part may be provided to rotate the turntable 600 and to lift and lower the turntable 600 in the up and down direction. With this configuration, the substrate can be transferred from one chamber to an adjacent chamber.
The turntable ring 630 incorporates a substrate support pin 640 for supporting the bottom surface of the substrate. The substrate support pins 640 are provided in plurality along the circumferential periphery of the turntable ring 630, and one end of the substrate support pins 640 is coupled to the turntable ring 630 with a fastening member (not shown) and the other end is provided toward the center of the turntable ring 630.
The first, second, third, fourth and fifth chambers 100, 200, 300, 400 and 500 are each provided with a plurality of the substrate support pins 640. The plurality of substrate support pins 6400 provided at each of the chambers are provided to be spaced apart at a predetermined interval along the periphery of the central stage 110, 210, 310, 410, 510. A substrate support pin insertion groove 110a having a recessed shape and opened in an upward direction is formed on an upper surface of the stage 110 provided in the first chamber 100, and a substrate support pin 640 is inserted into the substrate support pin insertion groove 110 a.
Fig. 3 (a) shows a state where the turntable ring 630 is mounted on the turntable body 610, and fig. 3 (b) shows a state where the turntable ring 630 is separated from the turntable body 610.
If the turntable driving part is driven, the turntable 600 rotates in a state of fixed vertical height. The turntable ring 630 moves up and down together with the platform 110, which will be described later, and the turntable ring 630 moves up and down in a state of being separated from the turntable main body 610.
The structure and internal configuration of the first chamber 100, which is one of the plurality of chambers 100, 200, 300, 400, and 500, will be described with reference to fig. 4.
The first chamber 100 is composed of an upper chamber 100a and a lower chamber 100b provided at a lower side of the upper chamber 100 a.
The upper chamber 100a is formed with a first space S1 therein, and the lower chamber 100b is formed with a second space S2 therein.
The loading and unloading of the substrate W in the first chamber 100 is performed in a state where the first space S1 and the second space S2 are spatially separated and do not communicate with each other.
The first space S1 has a function as a load lock portion for loading the substrate W on the substrate loading portion 2a by the transfer robot or unloading the substrate W having been subjected to the substrate processing onto the substrate loading portion 2a by the transfer robot.
The second space S2 is disposed with the turntable 600 and communicates with the adjacent other chambers 200, 300, 400, 500 to provide a path for transferring the substrate W between the respective chambers 100, 200, 300, 400, 500. That is, the second space S2 has a function of a passage for transferring the loaded substrate from the first chamber 100 to the second chamber 200, a function of a passage for transferring the substrate, which has been processed in the fifth chamber 500, to the load lock portion, and a function as a process chamber for performing cooling of the substrate before unloading.
An opening portion (not shown) for taking in and out the loaded and unloaded substrate is formed at one side surface of the upper chamber 100a, and the opening portion is opened and closed by a gate valve (not shown).
The first chamber 100 is equipped with: a stage 110 on which a substrate W is placed; lift pins 160 for supporting the bottom surface of the substrate W to lift and lower the substrate; a cooling unit (not shown) for cooling the substrate loaded on the upper portion of the stage 110. And, a stage driving part (not shown) that provides a driving force to enable the stage 110 to ascend and descend in an up-and-down direction may be provided.
A thin sheet portion 100c protruding inward is formed at a boundary portion between the upper chamber 100a and the lower chamber 100 b. The platform 110 and the turntable ring 630 are raised, so that the upper surface of the turntable ring 630 is closely attached to the thin sheet portion 100 c. A first sealing member 171 is interposed between the upper surface of the turntable ring 630 and the thin sheet portion 100c, thereby maintaining airtightness. A second sealing member 172 is interposed between the bottom surface of the turntable ring 630 and the upper surface of the stage 110, thereby maintaining airtightness.
In this state, the inner space of the first chamber 100 is isolated from the upper first space S1 and the lower second space S2 with respect to the stage 110.
The lift pin 160 is provided to penetrate the stage 110 in the up-down direction. A lift pin driving part (not shown) for vertically lifting the lift pin 160 is provided. If the lift pin driving part is driven to move the lift pins 160 up or down, the substrate W is lifted and lowered while the upper ends of the lift pins 160 support the bottom surface of the substrate W.
The table 110 and the lift pins 160 are lifted by the driving of the table driving part and the lift pin driving part, and the turntable ring 630 is separated from the turntable main body 610 and moves upward together with the table 110.
In this state, the substrate W is loaded from the substrate loading portion 2a into the upper chamber 100a or unloaded from the upper chamber 100a to the substrate loading portion 2a by the transfer robot.
The first chamber 100 may be provided with a ring separating member 120, and the ring separating member 120 may apply a downward force to the turntable ring 630 in order to prevent the turntable ring 630 from being adhered to the bottom surface of the thin plate portion 100c when the stage 110 is lowered by the stage driving unit in a state where the turntable ring 630 is closely attached to the thin plate portion 100 c.
The ring separating member 120 may be provided such that a lower end portion thereof penetrates the thin sheet portion 100c, and is lifted up and down by being driven by a separating member driving portion (not shown) that provides a force to lift up and down the ring separating member 120.
The second chamber 200 is provided with a stage 210 on which a substrate W is seated for substrate processing, an inner wall 101 surrounding an upper space of the stage 210, and a partition wall 700 moving in an up-and-down direction from an outer side surface of the inner wall 101.
The inner wall 101 may be integrally formed with the housing surrounding the second chamber 200. The partition wall 700 is provided to be movable up and down in a state of being closely attached to the outer side surface of the inner wall 101. A partition driving part (not shown) for moving the partition 700 up and down may be provided.
The partition 700 is provided to separate an upper space of the stage 210 from other chambers during the substrate processing in the second chamber 200, or to be lifted up and down to communicate with other chambers after the substrate processing is completed. The partition 700 may be provided in the third to fifth chambers 300, 400, and 500, respectively.
As shown in fig. 4, when the partition wall 700 moves upward, the internal space of the second chamber 200 is in a state of being communicated with other chambers, and if the partition wall 700 moves downward and the lower end portion contacts the turntable ring 630, the internal space of the second chamber 200 is in a state of being isolated from the other chambers. The third sealing member 271 is provided on the upper surface 630 of the turntable ring 630, and the third sealing member 271 is interposed between the lower end of the partition wall 700 and the upper surface of the turntable ring 630, so that airtightness can be maintained.
The second chamber 200 is equipped with a turntable ring support 20, and the bottom surface of the turntable ring 630 contacts and is supported on the upper surface of the turntable ring support 20.
In the above embodiment, the lower end portion of the partition wall 700 is configured to contact the dial ring 630, and the bottom surface of the dial ring 630 is configured to contact the dial ring support 20, but the upper surface and the bottom surface of the dial body 610 may be configured to contact the lower end portion of the partition wall 700 and the upper surface of the dial ring support 20, respectively.
Fig. 5 shows a state in which the lifter pin driving unit is driven to lower the lifter pin 160 in the state of fig. 4. If the lift pins 160 are lowered, the substrate W is seated on the stage 110.
Fig. 6 shows a state in which the stage driving unit is driven to lower the stage 110 in the state of fig. 5. At this time, the lift pin 160 is moved downward by the driving of the lift pin driving part. The turntable ring 630 and the substrate support pins 640 are lowered together with the stage 110 until the turntable ring 630 is seated on the turntable body 610.
The state of fig. 5 is a state where the upper surface of the turn ring 630 is in close contact with the thin sheet portion 100c, and the first space S1 and the second space S2 are isolated. In this state, when the table 110 is lowered, the turntable ring 630 may be attached to the bottom surface of the thin sheet portion 100 c. When the first space S1 functions as a load lock, the first space S1 may be formed in a vacuum, and at this time, a phenomenon in which the turntable ring 630 adheres to the bottom surface of the thin sheet part 100c may frequently occur.
Therefore, in the state of fig. 5, when the separating member driving part is driven to move the ring separating member 120 downward while the table 110 is moved downward, the lower end of the ring separating member 120 presses the upper surface of the turn table ring 630, thereby preventing the upper surface of the turn table ring 630 from adhering to the bottom surface of the thin sheet part 100c and preventing the turn table ring 630 from moving downward together with the table 110.
Fig. 7 shows a state in which the turntable driving unit is driven to raise the turntable 600 in the state of fig. 6. When the turntable 600 is raised, the substrate W is raised together with the turntable 600 in a state where the bottom surface thereof is supported by the substrate support pins 640.
Fig. 8 shows a state in which the turntable 600 is rotated by driving the turntable driving unit in the state of fig. 7. When the turntable 600 rotates, the substrate W is transferred from the first chamber 100 to the adjacent second chamber 200. If the fifth chamber 500 has a substrate processed therein, the substrate once positioned in the fifth chamber 500 may be moved to the first chamber 100 by the rotation of the turntable 600.
Fig. 9 illustrates a state in which the turntable 600 is lowered by the driving of the turntable driving part in the state of fig. 8, and the substrate W is seated on the upper surface of the stage 210.
Fig. 10 shows a state in which the partition wall 700 is lowered by the driving of the partition wall driving unit in the state of fig. 9, and the lower end portion of the partition wall 700 is in contact with the upper surface of the turntable ring 630. The lower end of the partition wall 700 is in contact with the upper surface of the turntable ring 630 via a third sealing member 271, and the bottom surface of the turntable ring 630 is supported by a turntable ring support 20. Therefore, the upper internal space S3 and the lower internal space S4 of the second chamber 200 are isolated so as not to communicate with the internal spaces of the other chambers 100, 300, 400, 500.
At this time, when the substrate W transferred from the fifth chamber 500 is positioned in the first chamber 100, the first chamber 100 cools the substrate W and the stage 110 may be raised to bring the upper surface of the turntable ring 630 into close contact with the sheet portion 100c in order to unload the substrate W after cooling. Thereafter, when the lift pins 160 are raised and the bottom surface of the substrate W is spaced apart from the upper surface of the stage 110, the unloading of the substrate W is achieved.
According to the above-described configuration, since the substrate is transferred by rotating the substrate in a state where the substrate is supported by the turntable ring 630 provided in the turntable 600, the substrate can be stably transferred. Also, it is possible to prevent the turntable ring 630 from being adhered to the thin sheet portion 100c when the platform 110 is lowered.
As described above, the present invention has been described in detail by referring to the preferred embodiments, but the present invention is not limited to the above-described embodiments, and can be modified in various ways within the scope of the claims, the detailed description of the invention, and the accompanying drawings, and also belongs to the present invention.

Claims (8)

1. A substrate processing apparatus, comprising: a plurality of chambers arranged at predetermined intervals in a circumferential direction for processing a substrate; a turntable configured to rotate for transferring the substrate between the plurality of chambers,
at least one chamber of the plurality of chambers is provided with a stage on which the substrate is seated and a stage driving part providing a driving force for elevating the stage in an up-down direction,
the turntable includes:
a turntable main body which is lifted and rotated by a turntable driving part;
an annular turntable ring provided to be detachable from the turntable body in a state of being seated on the turntable body.
2. The substrate processing apparatus according to claim 1,
a first chamber among the plurality of chambers, which performs loading and unloading of the substrate, includes a first space at an upper portion where the loading and unloading of the substrate are performed and a second space formed at a lower portion of the first space, the loading and unloading of the substrate being performed in a state where the first space and the second space are isolated from each other,
if the stage and the turntable ring are moved upward together by the stage driving part, the turntable ring is closely attached to a thin plate part provided at the boundary of the first space and the second space, so that the first space and the second space are isolated.
3. The substrate processing apparatus according to claim 2,
a ring separating member is provided to apply a downward force to the turntable ring when the stage is lowered by the stage driving part in a state where the turntable ring is closely attached to the thin plate part.
4. The substrate processing apparatus according to claim 3,
the lower end portion of the ring separating member penetrates the thin sheet portion in the vertical direction, and the penetrating lower end portion contacts the upper surface of the turntable ring to apply the downward force.
5. The substrate processing apparatus according to claim 2,
a first sealing member for maintaining airtightness is provided between the upper surface of the turntable ring and the thin sheet portion,
a second sealing member for maintaining airtightness is provided between the bottom surface of the turntable ring and the upper surface of the edge position portion of the stage.
6. The substrate processing apparatus according to claim 1,
the plurality of chambers includes: a first chamber to perform loading and unloading of the substrate; a plurality of heat treatment chambers for transferring the substrates loaded in the first chamber and sequentially performing heat treatment on the substrates loaded in the first chamber,
the substrates heat-treated in the plurality of heat treatment chambers are unloaded after being transferred to the first chamber to be cooled.
7. The substrate processing apparatus according to claim 1,
the plurality of chambers includes: a first chamber to perform loading and unloading of the substrate; a plurality of heat treatment chambers for transferring the substrates loaded in the first chamber and sequentially performing heat treatment on the substrates loaded in the first chamber,
each of the plurality of thermal processing chambers is provided with a partition wall that moves to isolate or communicate the internal space of each chamber from the space of another chamber during processing of the substrate transferred to the internal space of the respective chamber.
8. The substrate processing apparatus according to claim 7,
the partition wall is configured to be lifted up and down, the partition wall is lowered to contact an upper surface of the turntable ring located in each of the plurality of heat treatment chambers, and a bottom surface of the turntable ring is contacted and supported by a turntable ring support portion.
CN202011201480.XA 2019-12-23 2020-11-02 Substrate processing apparatus Active CN113097113B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020190173395A KR102259121B1 (en) 2019-12-23 2019-12-23 Substrate processing apparatus
KR10-2019-0173395 2019-12-23

Publications (2)

Publication Number Publication Date
CN113097113A true CN113097113A (en) 2021-07-09
CN113097113B CN113097113B (en) 2023-12-05

Family

ID=76375698

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011201480.XA Active CN113097113B (en) 2019-12-23 2020-11-02 Substrate processing apparatus

Country Status (3)

Country Link
KR (1) KR102259121B1 (en)
CN (1) CN113097113B (en)
TW (1) TWI748746B (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100055320A1 (en) * 2008-09-04 2010-03-04 Tokyo Electron Limited Film deposition apparatus, substrate processing apparatus, film deposition method and storage medium
US20100132614A1 (en) * 2008-12-01 2010-06-03 Tokyo Electron Limited Film deposition apparatus
US20110126985A1 (en) * 2009-12-02 2011-06-02 Tokyo Electron Limited Substrate processing apparatus
KR20140090011A (en) * 2013-01-08 2014-07-16 (주)에스티아이 Continuous treatment method of semiconductor wafer
DE102014114947A1 (en) * 2014-05-16 2015-11-19 Aixtron Se Device for depositing semiconductor layers and a susceptor for use in such a device
US20160320091A1 (en) * 2015-03-31 2016-11-03 Lam Research Corporation Apparatus for Thermal Control of Tubing Assembly and Associated Methods
CN107342243A (en) * 2016-05-03 2017-11-10 系统科技公司 Substrate board treatment and substrate processing method using same
US20190341292A1 (en) * 2016-10-12 2019-11-07 Lam Research Corporation Wafer positioning pedestal for semiconductor processing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3799336B2 (en) * 2003-05-12 2006-07-19 キヤノンアネルバ株式会社 Handling method of ring chuck in substrate processing apparatus
KR101406172B1 (en) * 2013-01-08 2014-06-12 (주)에스티아이 Continuous treatment apparatus and method of semiconductor wafer
KR101921597B1 (en) * 2016-12-16 2018-11-26 (주)에스티아이 Continuous treatment apparatus and method of substrate

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100055320A1 (en) * 2008-09-04 2010-03-04 Tokyo Electron Limited Film deposition apparatus, substrate processing apparatus, film deposition method and storage medium
US20100132614A1 (en) * 2008-12-01 2010-06-03 Tokyo Electron Limited Film deposition apparatus
US20110126985A1 (en) * 2009-12-02 2011-06-02 Tokyo Electron Limited Substrate processing apparatus
KR20140090011A (en) * 2013-01-08 2014-07-16 (주)에스티아이 Continuous treatment method of semiconductor wafer
DE102014114947A1 (en) * 2014-05-16 2015-11-19 Aixtron Se Device for depositing semiconductor layers and a susceptor for use in such a device
US20160320091A1 (en) * 2015-03-31 2016-11-03 Lam Research Corporation Apparatus for Thermal Control of Tubing Assembly and Associated Methods
CN107342243A (en) * 2016-05-03 2017-11-10 系统科技公司 Substrate board treatment and substrate processing method using same
US20190341292A1 (en) * 2016-10-12 2019-11-07 Lam Research Corporation Wafer positioning pedestal for semiconductor processing

Also Published As

Publication number Publication date
CN113097113B (en) 2023-12-05
KR102259121B1 (en) 2021-06-01
TW202125683A (en) 2021-07-01
TWI748746B (en) 2021-12-01

Similar Documents

Publication Publication Date Title
US6331095B1 (en) Transportation system and processing apparatus employing the transportation system
JP4048387B2 (en) Load lock mechanism and processing device
US6688375B1 (en) Vacuum processing system having improved substrate heating and cooling
US7371998B2 (en) Thermal wafer processor
US7332691B2 (en) Cooling plate, bake unit, and substrate treating apparatus
TW201824428A (en) Continuous treatment apparatus and method of substrate capable of using plasma to remove an oxide film existing on a substrate without using formic acid
KR20100126545A (en) Processing chamber
KR101770221B1 (en) Substrate holding apparatus
TW202303672A (en) Plasma processing system and method of mounting annular member
JP3585215B2 (en) Substrate processing equipment
KR101940580B1 (en) Loadlock chamber and method for treating substrates using the same
CN112670230B (en) Substrate processing apparatus
KR100944379B1 (en) Apparatus for wafer loading, and the method of wafer loading using the same
CN113097113B (en) Substrate processing apparatus
KR102166269B1 (en) Substrate processing apparatus and substrate processing method
KR102295249B1 (en) Substrate processing apparatus
CN111048444A (en) Heating plate cooling method, substrate processing apparatus and method
KR100526924B1 (en) Wafer lift apparatus of chamber for manufacturing semiconductor
JP2009224423A (en) Substrate processing apparatus
KR101261291B1 (en) Dry apparatus for photoresist on large area substrate
CN112563160B (en) Substrate processing apparatus
CN111834252B (en) Substrate processing apparatus
KR102235493B1 (en) Substrate processing apparatus
JP7109211B2 (en) Substrate processing equipment
KR20170024216A (en) Bake unit and Apparatus for treating usbstrate with the unit

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant