CN113066895A - 一种CsPbBr3钙钛矿太阳能电池的制备方法 - Google Patents
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- 238000000034 method Methods 0.000 title abstract description 12
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- 238000002360 preparation method Methods 0.000 claims abstract description 15
- 239000002904 solvent Substances 0.000 claims abstract description 15
- 238000004528 spin coating Methods 0.000 claims abstract description 15
- 230000005525 hole transport Effects 0.000 claims abstract description 14
- 238000002156 mixing Methods 0.000 claims abstract description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims abstract description 3
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical group [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims description 28
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 11
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 5
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- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 2
- 229920001167 Poly(triaryl amine) Polymers 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical group Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead(II) nitrate Inorganic materials [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 238000003756 stirring Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 101710089092 Periviscerokinin-1 Proteins 0.000 description 1
- 101800000132 Periviscerokinin-2.2 Proteins 0.000 description 1
- 101710089089 Periviscerokinin-3 Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 1
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Abstract
本发明涉及一种太阳能电池的制备方法,具体涉及一种CsPbBr3钙钛矿太阳能电池的制备方法。解决了现有工艺制备出的CsPbBr3薄膜普遍质量差的问题;本发明制备方法包括如下步骤:S1、将Pb前驱体和第一溶剂混合,得到澄清透明的Pb前驱体溶液;S2、将Cs前驱体与第二溶剂混合,得到澄清透明的Cs前驱体溶液;S3、在glass/FTO/TiO2基底上旋涂Pb前驱体溶液,热处理得到Pb的化合物薄膜;S4、在Pb的化合物薄膜上旋涂Cs前驱体溶液,热处理得到CsPbBr3薄膜;S5、在CsPbBr3薄膜上涂覆空穴传输层,最后在空穴传输层上沉积金属电极,形成CsPbBr3钙钛矿太阳能电池。本发明制备的CsPbBr3薄膜均匀无孔无裂纹,制备得到的CsPbBr3钙钛矿太阳能电池的载流子传输效率高。
Description
技术领域
本发明涉及一种太阳能电池的制备方法,具体涉及一种CsPbBr3钙钛矿太阳能电池的制备方法。
背景技术
作为一种新兴的全固态薄膜太阳能电池,钙钛矿太阳能电池具有制作工艺简单、工艺简单、成本低廉等优点,被认为是硅基太阳能电池的最有力竞争者。与其它种类钙钛矿太阳能电池相比,CsPbBr3钙钛矿太阳能电池具有较高的开路电压和优异的热稳定性,因而备受关注。研究发现CsPbBr3薄膜的制备工艺和形貌会显著影响钙钛矿太阳能电池的光电转换效率。表面光滑、结晶质量好的CsPbBr3薄膜可以明显改善CsPbBr3钙钛矿太阳能电池的光电转换效率。目前CsPbBr3薄膜的制备工艺大体可分为一步法和两步法,但是这两种工艺制备出的CsPbBr3薄膜普遍质量比较差,这主要归因于前驱体材料CsBr的溶解度较低,在旋涂成膜以及退火的过程中,CsPbBr3薄膜表面出现了一些孔洞,降低了薄膜质量,严重影响CsPbBr3太阳能电池的光电转换效率。
发明内容
为了克服现有技术的缺陷,本发明提出了一种CsPbBr3钙钛矿太阳能电池的制备方法。
本发明采用的技术方案具体如下:
一种CsPbBr3钙钛矿太阳能电池的制备方法,包括
S1、将Pb前驱体和第一溶剂混合,得到澄清透明的Pb前驱体溶液;
S2、将Cs前驱体与第二溶剂混合,得到澄清透明的Cs前驱体溶液;
S3、在glass/FTO/TiO2基底上旋涂Pb前驱体溶液,热处理得到Pb的化合物薄膜;
S4、在Pb的化合物薄膜上旋涂Cs前驱体溶液,热处理得到CsPbBr3薄膜;
S5、在CsPbBr3薄膜上涂覆空穴传输层,最后在空穴传输层上沉积金属电极,形成CsPbBr3钙钛矿太阳能电池。
所述Pb前驱体为PbBr2、Pb(Ac)2、Pb(NO3)2中的一种或多种组合。
所述第一溶剂为二甲基亚砜(DMSO)、N,N-二甲基甲酰胺(DMF)、十八烯(ODE)中的一种或多种组合。
4.根据权利要求1所述的一种CsPbBr3钙钛矿太阳能电池的制备方法,其特征在于:所述Cs前驱体为CsBr、CsCO3中的一种或CsBr和CsCO3的组合。
所述第二溶剂为DMSO、DMF、甲醇、乙醇、乙二醇或异丙醇中的一种或多种组合。
所述在Pb薄膜上旋涂Cs前驱体溶液层数为4层至8层。
所述空穴传输层为PEDOT:PSS、TFB、PVK、Spiro-OMeTAD、PTAA、NiO中的一种或多种组合。
所述金属电极为Au、Ag、Al、Cu、Sb中的一种或多种组合。
本发明的有益效果为:1)依本发明得到的制备的CsPbBr3薄膜均匀无孔无裂纹。
2)本发明制备的CsPbBr3薄膜可以应用于光探测器、闪烁体等领域内。
3)本发明制备的CsPbBr3钙钛矿太阳能电池,载流子传输效率高,光电转换效率远远大于一步法和两步法合成的CsPbBr3。
附图说明
图1为实施例1~3中所制的CsPbBr3无机钙钛矿电池的电流-电压(J-V)曲线;
图2为实施例1~3中所制的CsPbBr3无机钙钛矿电池的XRD图;
图3为实施例1~3中所制的CsPbBr3无机钙钛矿电池的PL图;
图4为实施例1~3中所制的CsPbBr3无机钙钛矿电池的紫外-可见光谱图。
具体实施方式
下面结合附图并通过具体的实施例进一步的说明本发明的技术方案:
实施例1
1:将一定量的Pb前驱体PbBr2和溶剂DMF混合,剧烈搅拌后,得到1mol/L的澄清透明PbBr2前驱体溶液,标记为溶液A。
2:将一定量的Cs前驱体CsBr与溶甲醇混合,剧烈搅拌后,得到0.07mol/L的澄清透明CsBr前驱体溶液,标记为溶液B。
3:在预先制备的glass/FTO/TiO2(致密)基底上,先烧结一层介孔状的TiO2薄膜,然后以2000rpm转速旋涂溶液A,80℃退火10min,得到PbBr2薄膜;
4:在得到的PbBr2薄膜上,以2000rpm转速旋涂4次溶液B,210℃退火10min,反应得到CsPbBr3薄膜。
5:在得到的CsPbBr3薄膜上涂覆一层Spiro-OMeTAD空穴传输层。
6:最后在空穴传输层上沉积50nm厚的金属电极,得到CsPbBr3钙钛矿太阳能电池,该电池的电流-电压曲线如图1中PVK-1所示。
所得的CsPbBr3光电转换效率为4.98%,开路电压达到了1.119V,短路电流为6.432,填充因子为69.22。
实施例2
1:将一定量的Pb前驱体PbBr2和溶剂DMF混合,剧烈搅拌后,得到1mol/L的澄清透明PbBr2前驱体溶液,标记为溶液A。
2:将一定量的Cs前驱体CsBr与溶剂甲醇混合,剧烈搅拌后,得到0.07mol/L的澄清透明CsBr前驱体溶液,标记为溶液B。
3:在预先制备的glass/FTO/TiO2(致密)基底上,以2000rpm转速旋涂溶液A,80℃退火10min,得到PbBr2薄膜。
4:在得到的PbBr2薄膜上,3000rpm转速旋涂8次溶液B,210℃退火10min,反应得到CsPbBr3薄膜。
5:在得到的CsPbBr3薄膜上涂覆一层Spiro-OMeTAD空穴传输层。
6:最后在空穴传输层上沉积50nm厚的金属电极,得到CsPbBr3钙钛矿太阳能电池,该电池的电流-电压曲线如图1中PVK-2所示。
所得的CsPbBr3光电转换效率为5.58%,开路电压达到了1.350V,短路电流为5.491,填充因子为68.12。
实施例3
1:将一定量的Pb前驱体PbBr2和溶剂DMF混合,剧烈搅拌后,得到1mol/L的澄清透明PbBr2前驱体溶液,标记为溶液A。
2:将一定量的Cs前驱体CsBr与溶剂甲醇混合,剧烈搅拌后,得到0.05mol/L的澄清透明的CsBr前驱体溶液,标记为溶液B。
3:在预先制备的glass/FTO/TiO2(致密)基底上,以2000rpm转速旋涂溶液A,100℃退火10min,得到PbBr2薄膜。
4:在得到的PbBr2薄膜上,以2000rpm转速旋涂4次溶液B,300℃退火10min,反应得到CsPbBr3薄膜。
5:在得到的CsPbBr3薄膜上涂覆一层Spiro-OMeTAD空穴传输层。
6:最后在空穴传输层上沉积50nm厚的金属电极,得到CsPbBr3钙钛矿太阳能电池,该电池的电流-电压曲线如图1中PVK-3所示。
所得的CsPbBr3光电转换效率为5.91%,开路电压达到了1.376V,短路电流为6.196,填充因子为69.33。
通过对实施1例和实施3例,发现相同条件下介孔TiO2的CsPbBr3的光电转换效率要低于致密TiO2的效率;通过实施2例和实施3例的对比发现,相同条件下,旋涂层数为8层并且基底为致密TiO2要比旋涂层数为4层并且基底为致密TiO2的效率低。通过三种实施例的比较,实施例3中4层致密的TiO2所制备的CsPbBr3钙钛矿太阳能电池是这三种结果中的最优,开压和填充也达到了三个实例中的最高。
对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是上述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。
此外,应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。
Claims (8)
1.一种CsPbBr3钙钛矿太阳能电池的制备方法,其特征在于:包括
S1、将Pb前驱体和第一溶剂混合,得到澄清透明的Pb前驱体溶液;
S2、将Cs前驱体与第二溶剂混合,得到澄清透明的Cs前驱体溶液;
S3、在glass/FTO/TiO2基底上旋涂Pb前驱体溶液,热处理得到Pb的化合物薄膜;
S4、在Pb的化合物薄膜上旋涂Cs前驱体溶液,热处理得到CsPbBr3薄膜;
S5、在CsPbBr3薄膜上涂覆空穴传输层,最后在空穴传输层上沉积金属电极,形成CsPbBr3钙钛矿太阳能电池。
2.根据权利要求1所述的一种CsPbBr3钙钛矿太阳能电池的制备方法,其特征在于:所述Pb前驱体为PbBr2、Pb(Ac)2、Pb(NO3)2中的一种或多种组合。
3.根据权利要求1所述的一种CsPbBr3钙钛矿太阳能电池的制备方法,其特征在于:所述第一溶剂为二甲基亚砜、N,N-二甲基甲酰胺、十八烯中的一种或多种组合。
4.根据权利要求1所述的一种CsPbBr3钙钛矿太阳能电池的制备方法,其特征在于:所述Cs前驱体为CsBr、CsCO3中的一种或CsBr和CsCO3的组合。
5.根据权利要求1所述的一种CsPbBr3钙钛矿太阳能电池的制备方法,其特征在于:所述第二溶剂为DMSO、DMF、甲醇、乙醇、乙二醇或异丙醇中的一种或多种组合。
6.根据权利要求1所述的一种CsPbBr3钙钛矿太阳能电池的制备方法,其特征在于:所述在Pb薄膜上旋涂Cs前驱体溶液层数为4层至8层。
7.根据权利要求1所述的一种CsPbBr3钙钛矿太阳能电池的制备方法,其特征在于:所述空穴传输层为PEDOT:PSS、TFB、PVK、Spiro-OMeTAD、PTAA、NiO中的一种或多种组合。
8.根据权利要求1所述的一种CsPbBr3钙钛矿太阳能电池的制备方法,其特征在于:所述金属电极为Au、Ag、Al、Cu、Sb中的一种或多种组合。
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