CN112979305A - 介电陶瓷组合物的制造方法及由其制造的介电陶瓷组合物 - Google Patents

介电陶瓷组合物的制造方法及由其制造的介电陶瓷组合物 Download PDF

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CN112979305A
CN112979305A CN202010580066.8A CN202010580066A CN112979305A CN 112979305 A CN112979305 A CN 112979305A CN 202010580066 A CN202010580066 A CN 202010580066A CN 112979305 A CN112979305 A CN 112979305A
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dielectric ceramic
ceramic composition
base material
material powder
diffusion
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CN112979305B (zh
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李敞健
丁海硕
朴伦秀
郑东俊
朴然庭
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Samsung Electro Mechanics Co Ltd
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Abstract

本公开提供了一种介电陶瓷组合物的制造方法及由其制造的介电陶瓷组合物。所述介电陶瓷组合物的制造方法包括将反应性官能团附着到钙钛矿结构的基体材料粉末颗粒的表面。

Description

介电陶瓷组合物的制造方法及由其制造的介电陶瓷组合物
本申请要求于2019年12月18日在韩国知识产权局提交的第10-2019-0169620号韩国专利申请的优先权的权益,该韩国专利申请的公开内容通过引用全部包含于此。
技术领域
本公开涉及一种介电陶瓷组合物的制造方法以及一种使用该方法制造的介电陶瓷组合物。
背景技术
诸如电容器、电感器、压电元件、变阻器、热敏电阻等的使用陶瓷材料的电子组件包括由陶瓷材料形成的陶瓷主体、形成在陶瓷主体内部的内电极以及设置在陶瓷主体的表面上以连接到内电极的外电极。近年来,随着这样的电子组件的应用领域扩大,除了电子组件的小型化、超薄化和超高容量之外,对电子组件的高可靠性的需求也增加。
这样的电子组件使用各种介电材料作为主要原料,在各种介电材料之中,具有钙钛矿结构的介电陶瓷组合物用于各种领域中。介电陶瓷组合物可以通过固相反应法、草酸盐法、水热合成法等来制造,在这些方法之中,固相反应法已经有效地用于制造应用为相对厚的片的介电组合物,但是可能存在这样的问题:在使用珠磨机等的分散工艺中发生大量聚集,并且根据添加剂的类型而发生分散度的差异,并且晶粒生长不平衡。
为了解决固相反应法的问题,已经提出了可以在金属的水溶液中分散陶瓷粉末并使其浆化、用于调节pH的液体沉淀法、或者可以在添加了水溶性盐的有机酸水溶液中分散陶瓷粉末并使其浆化、喷雾干燥法等,但是存在添加剂组分不均匀沉淀、阴离子组分残留为杂质、添加剂组分容易与介电粉末分离等限制。
发明内容
本公开的一个方面在于提供一种能够使子组分均匀分散的介电陶瓷组合物的制造方法和介电陶瓷组合物。
本公开的另一方面在于提供一种介电陶瓷组合物的制造方法和介电陶瓷组合物,该介电陶瓷组合物通过提高分散稳定性而直到最终产品具有均匀的浓度梯度。
本公开的另一方面在于提供一种介电陶瓷组合物的制造方法和介电陶瓷组合物,该介电陶瓷组合物通过使子组分的固溶度均匀而具有优异的电特性(诸如介电常数和高温耐压等)。
根据本公开的实施例,可以提供一种介电陶瓷组合物的制造方法,所述制造方法包括将反应性官能团附着到钙钛矿结构的基体材料粉末颗粒的表面的步骤。
根据本公开的另一实施例,一种介电陶瓷组合物可以包括钙钛矿结构的基体材料粉末颗粒和扩散型添加剂。在所述介电陶瓷组合物中,所述扩散型添加剂的浓度峰值层存在于距所述基体材料粉末颗粒的所述表面0.8nm至8.5nm的深度处。
附图说明
通过下面结合附图进行的详细描述,本公开的以上和其它方面、特征以及优点将被更清楚地理解,在附图中:
图1是示出根据本公开的实施例的电子组件的示意性透视图;
图2是沿图1的线I-I'截取的截面图;
图3是图2的区域A的放大图;
图4是图3的区域B的放大图;以及
图5是示出根据本公开的实施例的介电陶瓷组合物的TEM分析结果的曲线图。
具体实施方式
在下文中,将参照附图如下描述本公开的实施例。不旨在将在此描述的技术限制于特定实施例,并且应该理解为包括对本公开的实施例的各种修改、等同和/或替代。结合附图的描述,相似的附图标记可以用于相似的组件。
在附图中,为了清楚的描述,可以省略与描述无关的部分,并且可以放大元件的厚度以清楚地表示层和区域。在同一构思范围内具有相同功能的组件可以使用相同的附图标记来描述。
在本说明书中,诸如“具有”、“可以具有”、“包括”或“可以包括”的表述可以指示相应特征(诸如以数值、功能、操作、组件等为例的组件)的存在,并且可以不排除附加特征的存在。
在本说明书中,诸如“A或B”、“A或/和B中的至少一个(者/种)”或“A或/和B中的一个(者/种)或更多个(者/种)”等的表述可以包括一起列出的项的所有可能的组合。例如,“A或B”或“A或/和B中的至少一个(者/种)”可以指包括(1)至少一个A、(2)至少一个B或者(3)至少一个A和至少一个B两者的所有情况。
本公开涉及一种介电陶瓷组合物,并且包括介电陶瓷组合物的电子组件的示例可以包括电容器、电感器、压电元件、变阻器、热敏电阻等。
图1是示出了电子组件的示意性透视图,电子组件为作为包括根据本公开的实施例的介电陶瓷组合物的示例中的一个的电容器。图2是沿图1的线I-I'截取的截面图。图3是图2的区域A的放大图。图4是图3的区域B的放大图。
参照图1至图4,根据实施例的多层陶瓷电容器100包括陶瓷主体110、形成在陶瓷主体110中的多个内电极121和122以及形成在陶瓷主体110的外表面上的外电极131和132。
陶瓷主体110的形状没有特别限制,但是可以是如附图中所示的长方体形状。
形成在陶瓷主体110中的多个内电极121和122的端部从陶瓷主体110的在长度(X)方向上的相对的表面暴露。
第一外电极131和第二外电极132可以形成在陶瓷主体110的在长度方向上的相对的表面上,以分别电连接到内电极121和122。
包括在介电层111中的介电陶瓷组合物可以利用具有钙钛矿结构11a和扩散型添加剂11b的基体材料粉末颗粒11形成。扩散型添加剂11b距基体材料粉末颗粒11的表面的深度d可以为0.8nm至8.5nm。
根据本公开的实施例的介电陶瓷组合物的制造方法可以包括将反应性官能团附着到钙钛矿结构的基体材料粉末颗粒的表面的步骤。在本说明书中,“钙钛矿结构”可以具有ABX3的结构(其中,A和B是阳离子,并且X是阴离子),并且其可以指其中A阳离子与12个X阴离子配位以形成立方八面体结构,并且B阳离子以八面体结构键合到六个X阴离子的结构。在本说明书中,“反应性官能团”可以指赋予化合物性质的有机化合物的原子团,并且可以指能够与其它化合物键合的官能团。键合可以是包括离子空缺、共价键合和/或氢键合的概念。
通常,为了使添加剂在具有钙钛矿结构的基体材料粉末颗粒中分散,已知优选的是,基体材料粉末颗粒的表面为电中性。这是因为当基体材料粉末颗粒的表面不是电中性时,根据添加剂的电负性难以形成均匀的分散体,并且在一些情况下,可能发生在煅烧工艺期间进行的副反应。在根据本公开的介电陶瓷组合物的制造方法中,与上述问题相反,通过将反应性官能团附着到基体材料粉末颗粒的表面的步骤,可以在基体材料粉末颗粒的表面上涂覆需要固溶的组分,从而改善整个组合物的分散性。
在本公开的示例中,根据本公开的介电陶瓷组合物可以包括(Ba1-xCax)m(Ti1-yZry)O3、PbTiO3和SrTiO3(0≤x≤1,0.995≤m≤1.010,0≤y≤1)中的一种或更多种作为基体材料粉末颗粒。
基体材料粉末颗粒可以是(Ba1-xCax)TiO3、(Ba1-xCax)(Ti1-yZry)O3、Ba(Ti1-yZry)O3(0≤x≤1、0≤y≤1),形成为使得Ca和Zr部分溶置于BaTiO3中,并且当x为0且y为0时,基体材料粉末颗粒可以是BaTiO3
另外,基体材料粉末颗粒可以是PbTiO3和/或SrTiO3,但不限于此。基体材料粉末颗粒没有特别限制,但是考虑到最终组合物的粒径,平均粒径可以在50nm至1000nm的范围内。
在本实施例中,附着到基体材料粉末颗粒的表面的反应性官能团可以是环氧基、氨基、羟基、羧基、(甲基)丙烯酰基和/或(甲基)丙烯酰氧基。反应性官能团可以引起后面描述的包括具有高电负性的原子的扩散型添加剂的快速扩散和固溶。具体地,当如下所述制造基体材料粉末颗粒和扩散型添加剂并将其分散为水性浆料时,可以提高分散稳定性并可以保持均匀的分散性。
将反应性官能团附着到基体材料粉末颗粒的表面的方法没有特别限制。例如,可以在其中溶解有具有反应性官能团的化合物的水溶液或有机溶剂中使基体材料粉末颗粒沉淀以对基体材料粉末颗粒的表面进行改性,或者首先,可以通过化学处理等将基团附着到基体材料粉末颗粒的表面,然后可以使用与具有另一反应性官能团的化合物反应的方法,但不限于此。
在本公开的实施例中,在将反应性官能团附着到基体材料粉末颗粒的表面之后,可以选择性地包括将其干燥的步骤。干燥是为了有助于其中其表面被改性的基体材料粉末颗粒的储存、运输和/或后处理,干燥方法、干燥条件等没有特别限制。然而,为了防止附着到基体材料粉末颗粒的表面的反应性官能团的分解或去除,更优选地,可以在300℃或更低、250℃或更低或者200℃或更低的温度下干燥。
根据本公开的实施例的介电陶瓷组合物的制造方法可以包括将附着有反应性官能团的基体材料粉末颗粒和扩散型添加剂混合的步骤。在混合步骤中,可以使用干法混合和湿法混合两者。例如,在湿法混合的情况下,可以将表面被处理的基体材料粉末颗粒和扩散型添加剂分别制造成水性浆料,然后进行混合。在这种情况下,扩散型添加剂可以为氢氧化物和/或水溶性盐的形式。混合步骤可以是使用球磨机、珠磨机等通过机械研磨将扩散型添加剂分散到基体材料粉末颗粒中的步骤。
在根据本公开的介电陶瓷组合物的制造方法中,添加剂可以指除基体材料粉末颗粒以外的所有组分,并且可以是包括扩散型添加剂和非扩散型添加剂两者的概念。扩散型添加剂可以包括第一子组分和第二子组分,并且可以是在后续工艺中与基体材料粉末颗粒形成固溶体的组分。此外,非扩散型添加剂可以包括第三子组分。
在下文中,将更详细地描述根据本公开的实施例的介电陶瓷组合物的添加剂的组分。
a)第一子组分
根据本公开的实施例,在介电陶瓷组合物的制造方法中,扩散型添加剂可以包括第一子组分,第一子组分包括选自于由Y、Dy、Ho、Er、Gd、Ce、Nd、Sm、Tb、Tm、La、Yb、它们的氧化物和它们的碳酸盐组成的组中的一种或更多种。
基于基体材料粉末颗粒,可以以1.0mol%至3.0mol%的范围包含第一子组分。在本说明书中,相对于基体材料粉末颗粒的任何组分的“包括x mol%”可以指相对于100摩尔的基体材料粉末颗粒包括x摩尔份。第一子组分的含量可以基于包括在第一子组分中的Y、Dy、Ho、Er、Gd、Ce、Nd、Sm、Tb、Tm、La和Yb中的一种或更多种元素的含量,而不区分诸如氧化物或碳酸盐的添加形式。例如,包括在第一子组分中的Y、Dy、Ho、Er、Gd、Ce、Nd、Sm、Tb、Tm、La和Yb中的一种或更多种元素的含量之和相对于100摩尔份的基体材料粉末颗粒可以是1.0摩尔份或更多、1.1摩尔份或更多、1.2摩尔份或更多、1.3摩尔份或更多、1.4摩尔份或更多或者1.5摩尔份或更多,并且可以是3.0摩尔份或更少、2.9摩尔份或更少、2.8摩尔份或更少、2.7摩尔份或更少、2.6摩尔份或更少或者2.5摩尔份或更少。
第一子组分可以扩散到根据本公开的介电陶瓷组合物中,并且可以溶置预定深度,并且可以用于防止应用了根据本公开的介电陶瓷组合物的电子组件的可靠性降低。当第一子组分在上述范围外时,可能使高温耐压特性劣化。
b)第二子组分
根据本公开的另一实施例,在本公开的介电陶瓷组合物的制造方法中,扩散型添加剂可以包括第二子组分,第二子组分包括选自于由Mg、Li、Ti、Cr、Mn、Fe、Co、Ni、Cu、Zn、Sr、Zr、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Ta、W、Pb、Bi、V、Nb、B、它们的氧化物和它们的碳酸盐组成的组中的一种或更多种。在这种情况下,可以包括三种或更多种第二子组分。
第二子组分可以用于改善介电陶瓷组合物的抗还原性能,并且用于改善应用了介电陶瓷组合物的电子组件的高温耐压特性。
基于基体材料粉末颗粒,可以以1.0mol%至1.5mol%的范围包括第二子组分。第二子组分的含量可以基于包括在第二子组分中的元素的总含量,而不区分诸如氧化物或碳酸盐的添加形式。例如,第二子组分的元素的含量之和可以是1.00摩尔份或更多、1.05摩尔份或更多或者1.15摩尔份或更多,并且可以是1.5摩尔份或更少、1.45摩尔份或更少、1.40摩尔份或更少或者1.35摩尔份或更少。
第二子组分可以扩散并溶置于根据本公开的介电陶瓷组合物中,并且当第二子组分的总含量在上述范围之外时,可能降低根据本公开的介电陶瓷组合物的介电常数,并且可能使待制造的电子组件的高温耐压特性劣化。
c)第三子组分
根据本公开的另一实施例,在本公开的介电陶瓷组合物的制造方法中,非扩散型添加剂可以包括第三子组分,第三子组分包括选自于由Si、Ba、Al、Ca、它们的氧化物、它们的碳酸盐和包括它们的玻璃组成的组中的一种或更多种。
第三子组分可以用于在根据本公开的介电陶瓷组合物的烧结的初始阶段在低温下形成液相,以帮助烧结并使基体材料粉末颗粒和扩散型添加剂重排。
然而,由于第三子组分可以在最终烧制工艺中抑制第一子组分和第二子组分与上述基体材料粉末颗粒之间的反应,因此,针对根据本公开的介电陶瓷组合物的制造方法,在如下所述去除反应性官能团之后,添加第三子组分。
相对于基体材料粉末颗粒,可以以0.5mol%至5.0mol%的范围包括第三子组分。第三子组分的含量可以基于包括在第三子组分中的Si、Ba、Al和Ca中的一种或更多种的含量,而不区分诸如氧化物、碳酸盐或玻璃的添加形式。例如,相对于100mol份的基体材料粉末颗粒,包括在第三子组分中的Si、Ba、Al和Ca中的一种或更多种元素的含量之和可以是0.5摩尔份至5.0摩尔份。
当第三子组分的含量在所述范围外时,在介电陶瓷组合物被烧结时,可能出现诸如可烧结性降低、密度降低和二次相产生等的问题,并且可能出现诸如介电常数降低、由介电陶瓷组合物制造的电子组件的高温耐压特性降低等的问题。
在将基体材料粉末颗粒和扩散型添加剂混合之后,如果需要,还可以包括对它们进行干燥的步骤。如上所述,当通过制造水性浆料将基体材料粉末颗粒和扩散型添加剂湿式混合时,可能需要处理或去除残留水。干燥的方法没有特别限制。例如,可以使用除湿干燥机、减压干燥机或热风干燥机执行干燥,并且干燥期间的温度可以在100℃至300℃或120℃至200℃的范围内。
在示例中,根据本公开的介电陶瓷组合物的制造方法可以包括对混合有扩散型添加剂的基体材料粉末颗粒执行热处理的步骤。热处理可以用于去除引入到基体材料粉末颗粒的表面的反应性官能团,同时上述扩散型添加剂组分与基体材料粉末颗粒形成固溶体以形成涂层。当反应性官能团未被去除而保留在基体材料粉末颗粒的表面上时,可能发生其中基体材料粉末颗粒在随后的工艺中彼此聚集并且彼此不分散的问题。
可以在400℃至900℃的范围内的温度下执行热处理。当热处理温度低于400℃时,反应性官能团可能保留而不被去除,并且当热处理温度超过900℃时,基体材料粉末颗粒本身可能成团。热处理温度没有特别限制,只要其是能够充分去除反应性官能团的温度即可,但是可以根据粒径而被不同地施加,优选地,基体材料粉末颗粒的平均粒径越小,热处理温度越高。
在示例中,根据需要,根据本公开的介电陶瓷组合物的制造方法可以包括对热处理粉末进行干式研磨的步骤。干式研磨可以是对其中完成热处理而形成聚集体的组合物进行研磨的工艺。可以使用锤磨机、针磨机等执行研磨,但不限于此。
在本公开的实施例中,热处理后的介电陶瓷组合物可以在距基体材料粉末颗粒的表面0.8nm至8.5nm的深度处形成有上述扩散型添加剂的层。如上所述,在本公开的方法中,可以通过首先将反应性官能团附着到基体材料粉末颗粒并且使扩散型添加剂分散的步骤使分散均匀,从而使第一子组分和第二子组分从基体材料粉末颗粒的表面溶置恒定的深度。
在本公开的另一实施例中,根据本公开的介电陶瓷组合物的制造方法还可以包括将热处理后的基体材料粉末颗粒与包括第三子组分的非扩散型添加剂进行混合的步骤。如上所述,第三子组分可以用于帮助对基体材料粉末颗粒和扩散型添加剂进行烧结和用于使基体材料粉末颗粒和扩散型添加剂重排。
本公开还涉及一种介电陶瓷组合物。根据本公开的介电陶瓷组合物可以包括:基体材料粉末颗粒,具有钙钛矿结构;以及扩散型添加剂。扩散型添加剂的浓度峰值层可以存在于距基体材料粉末颗粒的表面0.8nm至8.5nm的深度处。在一个示例中,在距基体材料粉末颗粒的表面0.8nm至8.5nm的深度范围内,与扩散型添加剂相对于基体材料粉末颗粒的最大质量比相比,扩散型添加剂相对于基体材料粉末颗粒的质量浓度可以为50%或更高。然而,深度范围的确定不限于此,并且可以是由本领域普通技术人员所能够认识到的。
在本公开的示例中,扩散型添加剂可以包括第一子组分,所述第一子组分包括选自于由Y、Dy、Ho、Er、Gd、Ce、Nd、Sm、Tb、Tm、La、Yb、它们的氧化物和它们的碳酸盐组成的组中的一种或更多种。
在本公开的另一示例中,扩散型添加剂可以包括第二子组分中的三种或更多种,所述第二子组分包括选自于由Mg、Li、Ti、Cr、Mn、Fe、Co、Ni、Cu、Zn、Sr、Zr、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Ta、W、Pb、Bi、V、Nb、B、它们的氧化物和它们的碳酸盐组成的组中的一种或更多种。
在一个示例中,根据本公开的介电陶瓷组合物可以具有在100nm至500nm范围内的平均粒径(D50)。在本说明书中,平均粒径(D50)可以通过使用扫描电子显微镜(SEM,Jeol,Inc.的JSM-7400F)拍摄图像,然后使用图像分析程序(Mediacybernetics,Inc.的ImagePro Plus ver 4.5)通过组合物颗粒的长轴和短轴的平均值计算粒径来获得,并且平均粒径(D50)可以基于其粒径来获得,并且可以是500次测量的平均值。平均粒径(D50)可以以本领域技术人员所理解的不同方式和/或通过本领域技术人员所理解的不同工具测量。在本说明书中,D50可以指当通过测量粒径从小颗粒累积体积时对应于总体积的50%的粒径。
由于基体材料粉末颗粒、第一子组分、第二子组分等的描述与上述相同,因此将省略其描述。
在下文中,将参照实验示例更详细地描述本公开。然而,本公开的范围不受实验示例的限制。
实验示例
使用反应性官能团将羟基附着到钛酸钡(BaTiO3)(基体材料粉末颗粒)。羟基以过氧化氢(H2O2)分散在钛酸钡粉末中并附着到钛酸钡的表面。在这种情况下,每10g钛酸钡粉末使用200mL过氧化氢,并在表面处理后对其进行干燥以获得表面改性的钛酸钡粉末。
使用氧化锆球作为介质将表面处理过的钛酸钡粉末与纯水混合,然后球磨以制备钛酸钡水性浆料。
单独地,根据下表1的组成比通过将第一子组分和第二子组分与纯水混合来制备水性浆料。之后,通过球磨2小时将第一子组分和第二子组分的水性浆料与钛酸钡的水性浆料混合。将混合的浆料在150℃的温度下热风干燥,并根据下表1的条件对干燥的粉末进行热处理。
使用刮刀型涂布机将制备的浆料制备成厚度为10μm的模制片。在制备的模制片上执行Ni内电极印刷。通过堆叠25层覆盖片来制造上盖和下盖,并且通过压制并堆叠21层印刷活性片来制造压条。使用切割机将压条切割成具有3.2mm×1.6mm尺寸的片。
将制造的3216尺寸的片煅烧,然后在1.0%H2/99.0%N2(H2O/H2/N2气氛)的还原气氛中在1200℃至1250℃的温度下烧制2小时,并且在N2气氛中在1000℃下通过执行3小时的再氧化进行热处理。在烧制后的片上使用Cu膏通过端接工艺和电极烧制工艺完成外电极。
在表1中,作为示例描述了其中对钛酸钡(基体材料粉末颗粒)进行表面处理并且通过热处理涂覆第一子组分和第二子组分的方法。作为对比示例描述了其中通过常规方法一次混合子组分的方法。
评价如上所述完成的原型多层陶瓷电容器(原型MLCC)样品的介电常数、DF、BDV、MTTF等。
{表1}
Figure BDA0002552046790000111
{表2}
Figure BDA0002552046790000121
表2示出了用于评价表1中所示的特性的标准。例如,可先判断“标准1”,然后判断“标准2”。
在上面的表1中,使用LCR计在1kHz、AC 0.2V/μm下测量介电常数、耗散因子(DF)和平均失效时间(MTTF)。然而,测量不限于此,并且可以以本领域技术人员理解的不同方式执行。
此外,击穿电压(BDV)特性由每单位厚度的最大电压与最小电压之间的差表示,添加剂固溶度在垂直于晶界的方向上基于钛酸钡粉末的表面上Dy含量为最大值(质量%)的1/2的点测量,并且钛酸钡粉末的表面基于Ba含量为最大值的1/2的点。击穿电压(BDV)特性的测量不限于此,并且可以以本领域技术人员理解的不同方式执行。
观察未执行表面处理的对比示例1至对比示例5、示例1至示例15以及示例17至示例21,可以确认,DF和高温耐压特性降低。另外,参照其中对基体材料粉末颗粒进行表面处理但未进行热处理的实施例16,可以确认,用于评价电子组件的可靠性的MTTF显著降低。
此外,在400℃或更低的热处理温度下,由于未充分执行钛酸钡粉末的表面上的有机物质的分解和羟基的去除,因此存在预期的副作用,并且确认了当热处理温度为800℃或更高时,由于粒径的增加和因钛酸钡之间的颗粒结合而导致的粗粒部分的增加,耐压特性的改善效果减半。
另一方面,在其中钛酸钡粉末的表面用羟基改性并完成热处理的示例22至示例29中,可以确认,改善了可靠性,特别地,高温(150℃)耐压特性,同时显示出低的DF以及优异的介电常数和BDV。
图5是根据本公开的实施例的完成热处理后的介电陶瓷组合物的TEM分析照片。参照图5,作为钛酸钡用作基体材料粉末颗粒并且镝(Dy)在基体材料粉末颗粒中用作扩散型添加剂而呈固溶体的结果,可以确认,在距基体材料粉末颗粒的表面约8.1nm的深度处均匀地形成镝层。
如以上所阐述的,根据本公开的实施例,可以提供能够使子组分均匀地分散的介电陶瓷组合物的制造方法和介电陶瓷组合物。
根据本公开的另一实施例,可以提供介电陶瓷组合物的制造方法和介电陶瓷组合物,该介电陶瓷组合物通过提高分散稳定性直到所制造的最终粉末具有均匀的浓度梯度。
根据本公开的另一实施例,可以提供介电陶瓷组合物的制造方法和介电陶瓷组合物,该介电陶瓷组合物通过使子组分的固溶度均匀而具有优异的电特性(诸如介电常数和高温耐压)。
然而,本公开的各种和有利的优点及效果不限于以上描述,并且将在描述本公开的具体实施例的过程中更容易理解。
虽然本公开包括具体示例,但是对于本领域普通技术人员将明显的是,在不脱离权利要求及其等同物的精神和范围的情况下,可以在这些示例中进行形式和细节上的各种改变。

Claims (14)

1.一种介电陶瓷组合物的制造方法,所述制造方法包括:将反应性官能团附着到钙钛矿结构的基体材料粉末颗粒的表面的步骤。
2.根据权利要求1所述的介电陶瓷组合物的制造方法,其中,所述基体材料粉末颗粒包括(Ba1-xCax)m(Ti1-yZry)O3(0≤x≤1,0.995≤m≤1.010,0≤y≤1)、PbTiO3和SrTiO3中的一种或更多种。
3.根据权利要求1所述的介电陶瓷组合物的制造方法,其中,所述反应性官能团是选自于由环氧基、氨基、羟基、羧基、(甲基)丙烯酰基和(甲基)丙烯酰氧基组成的组中的一种或更多种。
4.根据权利要求1所述的介电陶瓷组合物的制造方法,所述制造方法还包括将附着有所述反应性官能团的所述基体材料粉末颗粒和扩散型添加剂混合的步骤。
5.根据权利要求4所述的介电陶瓷组合物的制造方法,其中,所述扩散型添加剂与所述基体材料粉末颗粒形成固溶体。
6.根据权利要求4所述的介电陶瓷组合物的制造方法,其中,所述扩散型添加剂包括:
第一子组分,包括选自于由Y、Dy、Ho、Er、Gd、Ce、Nd、Sm、Tb、Tm、La、Yb、它们的氧化物和它们的碳酸盐组成的组中的一种或更多种;以及
第二子组分,包括选自于由Mg、Li、Ti、Cr、Mn、Fe、Co、Ni、Cu、Zn、Sr、Zr、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Ta、W、Pb、Bi、V、Nb、B、它们的氧化物和它们的碳酸盐组成的组中的一种或更多种。
7.根据权利要求4所述的介电陶瓷组合物的制造方法,所述制造方法还包括对混合有所述扩散型添加剂的所述基体材料粉末颗粒执行热处理的步骤。
8.根据权利要求7所述的介电陶瓷组合物的制造方法,其中,所述热处理在400℃至900℃的温度范围内执行。
9.根据权利要求7所述的介电陶瓷组合物的制造方法,所述制造方法还包括将热处理后的基体材料粉末颗粒与包括第三子组分的非扩散型添加剂混合的步骤。
10.根据权利要求4所述的介电陶瓷组合物的制造方法,其中,所述扩散型添加剂的层形成至距所述基体材料粉末颗粒的所述表面0.8nm至8.5nm的深度。
11.一种介电陶瓷组合物,所述介电陶瓷组合物包括:
钙钛矿结构的基体材料粉末颗粒;以及
扩散型添加剂,
其中,所述扩散型添加剂的浓度峰值层存在于距所述基体材料粉末颗粒的表面0.8nm至8.5nm的深度处。
12.根据权利要求11所述的介电陶瓷组合物,其中,所述扩散型添加剂包括第一子组分,所述第一子组分包括选自于由Y、Dy、Ho、Er、Gd、Ce、Nd、Sm、Tb、Tm、La、Yb、它们的氧化物和它们的碳酸盐组成的组中的一种或更多种。
13.根据权利要求11所述的介电陶瓷组合物,其中,所述扩散型添加剂包括第二子组分,所述第二子组分包括选自于由Mg、Li、Ti、Cr、Mn、Fe、Co、Ni、Cu、Zn、Sr、Zr、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Ta、W、Pb、Bi、V、Nb、B、它们的氧化物和它们的碳酸盐组成的组中的一种或更多种。
14.根据权利要求11所述的介电陶瓷组合物,其中,所述介电陶瓷组合物的平均粒径D50在100nm至500nm的范围内。
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