CN112967945A - Micro light-emitting diode testing device, manufacturing method, system and testing method - Google Patents
Micro light-emitting diode testing device, manufacturing method, system and testing method Download PDFInfo
- Publication number
- CN112967945A CN112967945A CN202010299585.7A CN202010299585A CN112967945A CN 112967945 A CN112967945 A CN 112967945A CN 202010299585 A CN202010299585 A CN 202010299585A CN 112967945 A CN112967945 A CN 112967945A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- power supply
- testing
- micro light
- supply contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 197
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000523 sample Substances 0.000 claims abstract description 78
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Abstract
The invention discloses a miniature light-emitting diode testing device, a manufacturing method, a system and a testing method, wherein the miniature light-emitting diode testing device comprises a plurality of testing probes arranged at intervals, and the testing probes arranged at intervals are mutually connected in parallel; each test probe is driven in an independent driving mode and is used for testing a micro light-emitting diode chip. The invention can test Micro LED chips in batch, obviously improves the test efficiency and reduces the manufacturing cost.
Description
Technical Field
The invention relates to the technical field of miniature light-emitting diodes, in particular to a miniature light-emitting diode testing device, a manufacturing method, a system and a testing method.
Background
In the manufacturing process of Micro Light-Emitting Diode (Micro LED) products, electrical testing is a problem that people pay attention to, however, with the continuous shrinkage of Micro LED products, the minimum limit (80um) of a traditional contact probe cannot meet the requirement of testing the Micro LED products.
Conventional probe testing requires a single contact to both the positive and negative electrodes of the Micro LED chip to complete the test by forming a complete circuit loop. However, the number of Micro LED chips is huge, and testing the Micro LED chips individually results in long testing time and high manufacturing cost.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, an object of the present invention is to provide a testing apparatus, a manufacturing method, a system and a testing method for Micro light emitting diodes, so as to solve the problems of long testing time and high manufacturing cost caused by the need of individually testing Micro LED chips in the conventional probe testing.
The technical scheme of the invention is as follows:
a micro light-emitting diode testing device comprises a plurality of testing probes arranged at intervals, wherein the testing probes arranged at intervals are connected in parallel; each test probe is driven in an independent driving mode and is used for testing a micro light-emitting diode chip.
The invention further provides that the test probe comprises a drive circuit unit, an insulating layer, a positive power supply contact and a negative power supply contact; the positive power supply contact and the negative power supply contact are arranged on two sides of the upper end face of the insulating layer at intervals and are connected with the driving circuit unit, the driving circuit unit is arranged on the lower end face of the insulating layer, and the upper end face and the lower end face are arranged oppositely; wherein each of the test probes is independently driven by the driving circuit unit.
The invention is further provided that the anode power supply contacts of the test probes arranged at intervals are mutually connected in parallel, and the cathode power supply contacts of the test probes arranged at intervals are mutually connected in parallel.
The invention is further provided that, in the testing process, the positive power supply contact and the negative power supply contact are respectively used for contacting with two electrodes of the micro light-emitting diode chip.
The invention further provides that in the test process, the micro light-emitting diode chip is a flip chip and comprises a light-emitting layer, a first type semiconductor layer, a second type semiconductor layer, a first type electrode and a second type electrode; the light emitting layer is arranged between the first type semiconductor layer and the second type semiconductor layer, the first type electrode is arranged on the first type semiconductor layer, and the second type electrode is arranged on the second type semiconductor layer; in the test process, the positive power supply contact is connected with the first type electrode, and the negative power supply contact is connected with the second type electrode.
The invention is further provided that the distance between the positive power supply contact and the negative power supply contact on each test probe is equal to the distance between the two electrodes on each micro light-emitting diode chip.
The invention further provides that the insulating layer is a silicon dioxide passivation layer.
A manufacturing method of a micro light-emitting diode testing device is applied to the micro light-emitting diode testing device and comprises the following steps:
providing a driving circuit board, wherein a plurality of driving circuit units are arranged on the driving circuit board;
patterning the light resistance on the driving circuit board, and defining a positive power supply contact area and a negative power supply contact area corresponding to each driving circuit unit;
removing redundant photoresist and redundant metal by stripping gold, forming a patterned positive power supply contact in the positive power supply contact area and forming a patterned negative power supply contact in the negative power supply contact area;
manufacturing an insulating layer at the upper end of the driving circuit board, patterning the light resistance again, and defining the areas of the anode power supply contact and the cathode power supply contact;
and etching the insulating layer to expose the anode power supply contact and the cathode power supply contact.
The invention also provides a micro light-emitting diode test system, which comprises: the positioning module is used for searching a detection point of the micro light-emitting diode device; the carrying platform is used for transferring the micro light-emitting diode device to a detection point; the optical equipment is used for detecting optical parameters of the micro light-emitting diode chip; an electrical device; and the micro light-emitting diode testing device is electrically connected with the electrical equipment, and the electrical equipment is used for testing the electrical parameters of the micro light-emitting diode chip through the micro light-emitting diode testing device.
The invention also provides a testing method of the micro light-emitting diode, which comprises the following steps of;
transferring a micro light-emitting diode testing device to a testing point, wherein the micro light-emitting diode testing device comprises a plurality of testing probes, each testing probe is driven in an independent driving mode, and the testing point is provided with a plurality of micro light-emitting diode chips to be tested;
and respectively contacting the anode power supply contact and the cathode power supply contact of each test probe with two electrodes of each micro light-emitting diode chip so as to acquire the electrical parameters of each micro light-emitting diode chip.
The invention provides a miniature light-emitting diode testing device, a manufacturing method, a system and a testing method, wherein the miniature light-emitting diode testing device comprises a plurality of testing probes arranged at intervals, and the testing probes arranged at intervals are mutually connected; and each test probe is driven in an independent driving mode and is used for testing a micro light-emitting diode chip. The invention can test Micro LED chips in batch, obviously improves the test efficiency and reduces the manufacturing cost.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a micro LED testing device according to the present invention.
Fig. 2 is a partial structural view of the test probe of the present invention.
FIG. 3 is a partial schematic view of another angle of the test probe of the present invention.
Fig. 4 is a partial structural schematic diagram of a micro light emitting diode chip.
Fig. 5 is a partial schematic view of another angle of the micro led chip.
Fig. 6 is a schematic structural diagram of micro light emitting diode chips distributed in an array.
FIG. 7 is a schematic structural diagram of a micro LED chip corresponding to the micro LED testing apparatus of the present invention.
FIG. 8 is a schematic diagram of the driving power supply and the test probe according to the present invention.
FIG. 9 is a schematic flow chart of a method for manufacturing a micro LED testing device according to the present invention.
FIG. 10 is a flow chart illustrating a method for testing a micro light emitting diode according to the present invention.
The various symbols in the drawings: 11. testing the probe; 111. a drive circuit unit; 1111. a drive circuit board; 112. an insulating layer; 113. a positive power supply contact; 114. a negative supply contact; 12. a micro light emitting diode chip; 121. a substrate; 122. a light emitting layer; 123. a P electrode; 124. and an N electrode.
Detailed Description
The invention provides a miniature light-emitting diode testing device, a manufacturing method, a system and a testing method. In order to make the objects, technical solutions and effects of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the embodiments and claims, the terms "a" and "an" can mean "one or more" unless the article is specifically limited.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
Referring to fig. 1 to 8, the present invention provides a testing apparatus for micro light emitting diodes according to a preferred embodiment.
As shown in fig. 1 to 7, a micro led testing apparatus includes a plurality of testing probes 11 arranged at intervals, the testing probes 11 arranged at intervals are connected in parallel, each testing probe 11 is driven in an independent driving manner, and each testing probe 11 is used for testing a micro led chip 12. Specifically, a plurality of test probes 11 arranged at intervals are arranged in an array and connected in parallel with each other, and in the test process, each test probe 11 is connected with a corresponding micro light emitting diode chip 12, and the test probes 11 are individually powered to sequentially test the micro light emitting diode chips 12. Therefore, the invention can test Micro LED chips in batch, thereby reducing the test time, shortening the manufacturing time, obviously improving the test efficiency, effectively eliminating the poor Micro LED chips 12 and further reducing the manufacturing cost.
Referring to fig. 2 to 8, in a further implementation of an embodiment, the test probe 11 includes a driving circuit unit 111, an insulating layer 112, a positive power supply contact 113, and a negative power supply contact 114. Specifically, the insulating layer 112 is a silicon dioxide passivation layer, the insulating layer 112 is used for protecting a circuit in a region other than the positive power supply contact 113 and the negative power supply contact 114, the positive power supply contact 113 and the negative power supply contact 114 are arranged at intervals on two sides of an upper end face of the insulating layer 112 and are both connected with the driving circuit unit 111, the driving circuit unit 111 is arranged on a lower end face of the insulating layer 112, the upper end face and the lower end face are arranged oppositely, and each of the test probes 11 is independently driven by the driving circuit unit 111.
It should be noted that the driving circuit unit 111 is composed of a thin film transistor and a storage capacitor, and the driving circuit unit 111 is used for supplying power to the test probe 11, so that the micro light emitting diode chip 12 can be independently driven.
More specifically, each of the test probes 11 can be individually conducted through a circuit design cascade lattice, wherein the circuit is connected with a driving device to form a driving circuit unit 111, and in the testing process, each test probe 11 is correspondingly provided with one driving circuit unit 111 to individually supply power to the test probe 11, so as to sequentially test the micro led chips 12, for example, first conducting the first test probe 11 to test the micro led chip 12 corresponding to the first test probe 11, while the other test probes 11 are in an off state, then testing the second micro led chip 12, while conducting the second test probe 11, disconnecting the first test probe 11, and so on, conducting the third test probe 11, and disconnecting the second test probe 11,. The n-1 test probes 11 are disconnected, so that the purpose of testing the micro light-emitting diode chips 12 through the test probes 11 individually in sequence is achieved.
It should be noted that each of the test probes 11 can be individually conducted through a cascade lattice of circuit design, and can be implemented through cascade array programming, which is the prior art and is not described herein again.
Referring to fig. 1 and 2, in a further implementation manner of an embodiment, the positive power supply contacts 113 of the test probes 11 arranged at intervals are connected in parallel, and the negative power supply contacts 114 of the test probes 11 arranged at intervals are connected in parallel. In one embodiment, the testing of the micro led chips 12 can be continued by connecting the testing probes 11 in parallel so that even if one of the positive power supply contact 113 or the negative power supply contact 114 is damaged, the other positive power supply contact 113 or the negative power supply contact 114 can still work normally.
Referring to fig. 4, 5 and 7, in a further embodiment of an embodiment, the micro light emitting diode chip 12 is a flip chip, the micro light emitting diode chip 12 includes a substrate 121, a light emitting layer 122, a first type semiconductor layer (not shown), a second type semiconductor layer (not shown), a first type electrode and a second type electrode, and particularly, the first type semiconductor layer and the second type semiconductor layer are disposed on the substrate 121, the light emitting layer 121 is disposed between the first type semiconductor layer and the second type semiconductor layer, the first type electrode is disposed on the first type semiconductor layer, the second type electrode is disposed on the second type semiconductor layer, during the test, the positive power supply contact 113 is connected to the first type electrode and the negative power supply contact 114 is connected to the second type electrode. For example, the first-type electrode may be a P-electrode 123, the second-type electrode may be an N-electrode 124, and during the test, the positive power supply contact 113 is connected to the P-electrode 123, and the negative power supply contact 114 is connected to the N-electrode 124, so as to test the micro light emitting diode chip 12.
Alternatively, the first type semiconductor layer may be a P type semiconductor layer, and the second type semiconductor layer may be an N type semiconductor layer, in which case, the first type electrode may be a P electrode 123, and the second type electrode may be an N electrode 124.
Of course, in practical use, the first type semiconductor layer may be an N type semiconductor layer, and the second type semiconductor layer may be a P type semiconductor layer. The first type electrode may be an N electrode 124 and the second type electrode may be a P electrode 123.
It should be noted that all the test probes 11 are connected in parallel, and each test probe 11 is driven independently, that is, each test probe 11 has an independent switch (driving circuit unit), when closed, the circuit is turned on to provide current for testing, and when turned off, the circuit is not turned on, and the test is not performed, the positive and negative electrodes of the test probe 11 depend on the positive and negative electrodes of the power supply, for example, one end of the test probe 11 connected to the positive electrode of the power supply is the positive electrode, and the other end connected to the negative electrode of the power supply is the negative electrode, and the test is performed based on the driving circuit board 1111 under the driving circuit unit 111.
Referring to fig. 7, in a further implementation manner of an embodiment, a distance between the positive power supply contact 113 and the negative power supply contact 114 on each of the test probes 11 is equal to a distance between two electrodes on each of the micro light emitting diode chips 12, for example, a distance between the positive power supply contact 113 and the negative power supply contact 114 on each of the test probes 11 is equal to a distance between the P electrode 123 and the N electrode 124, so as to ensure that the positive power supply contact 113 and the negative power supply contact 114 of the test probe 11 can be in corresponding contact connection with the P electrode 123 and the N electrode 124 of the micro light emitting diode chip 12, respectively.
As shown in fig. 9, the present invention further provides a method for manufacturing a micro light emitting diode testing device, which is applied to the micro light emitting diode testing device, and comprises the following steps:
s1, providing a driving circuit board, wherein a plurality of driving circuit units are arranged on the driving circuit board;
specifically, the driving circuit board may use a glass substrate made of an Indium Tin Oxide (ITO) material. Patterning the glass substrate after yellow light manufacturing (glue homogenizing, exposure and development), etching and gold stripping, and manufacturing a driving circuit unit on the glass substrate;
s2, patterning the photo-resistor on the driving circuit board, and defining a positive power supply contact area and a negative power supply contact area corresponding to each driving circuit unit;
specifically, after the yellow light process is performed again for glue spreading, exposure and development, the photoresist is patterned, and the positive power supply contact region and the negative power supply contact region corresponding to each driving circuit unit are defined.
S3, removing redundant photoresist and redundant metal through gold stripping, forming a patterned positive power supply contact in the positive power supply contact area and forming a patterned negative power supply contact in the negative power supply contact area;
specifically, a gold stripping process (Lift off) is carried out to remove photoresist and excess metal, a patterned positive power supply contact is formed in the positive power supply contact area, and a patterned negative power supply contact is formed in the negative power supply contact area;
and S4, manufacturing an insulating layer at the upper end of the driving circuit board, patterning the photoresist again, and defining the areas of the positive power supply contact and the negative power supply contact.
Specifically, silicon dioxide is deposited on the glass substrate to serve as an insulating layer, and after glue spreading, exposure and development are carried out again through a yellow light process, the photoresist is patterned to define the regions of the positive power supply contact and the negative power supply contact.
And S5, etching the insulating layer to expose the positive power supply contact and the negative power supply contact.
Specifically, the positive power supply contact and the negative power supply contact are exposed by wet etching.
In one embodiment, the present invention further provides a micro led testing system, which includes a positioning module, a carrier, a photonic device, an electrical device, and a micro led testing apparatus. The positioning module can be an industrial camera, the positioning module is used for searching a detection point (to-be-detected area) of the micro light-emitting diode device, the carrier is used for transferring the micro light-emitting diode device to the detection point, the optical equipment is used for detecting optical parameters (such as wavelength and half-wave width) of the micro light-emitting diode chip, the micro light-emitting diode testing device is electrically connected with the electrical equipment, and the electrical equipment is used for testing the electrical parameters (such as voltage and current) of the micro light-emitting diode chip through the micro light-emitting diode testing device. The electrical equipment is positioned right above the micro light-emitting diode chip, and the optical equipment is positioned right below the micro light-emitting diode chip.
Further, the micro led testing system further includes a Computer (PC), the stage, the electrical device, and the optical device are all electrically connected to the PC, and the PC controls the stage, the electrical device, and the optical device to operate.
When the driving circuit unit gives a power supply signal, the micro light-emitting diode chip emits light, the electrical equipment positioned right above the micro light-emitting diode chip tests the electrical parameters of the micro light-emitting diode chip, the optical equipment positioned right below the micro light-emitting diode chip tests the optical parameters, the PC system receives and processes the electrical parameter test result transmitted by the electrical equipment and the optical parameter test result transmitted by the optical equipment, and then the micro light-emitting diode chip is exposed according to the test result to judge whether the currently detected micro light-emitting diode chip is good.
As shown in fig. 10, in an embodiment, the present invention further provides a method for testing a micro light emitting diode, the method comprising the steps of:
s10, transferring the micro light emitting diode testing device to a testing point, wherein the micro light emitting diode testing device comprises a plurality of testing probes, each testing probe is driven in an independent driving mode, and the testing point is provided with a plurality of micro light emitting diode chips to be tested.
Specifically, the side of the micro light emitting diode chip to be detected, which is provided with the electrode, is placed on the carrier upwards, that is, the side of the micro light emitting diode chip, which is provided with the P electrode and the N motor, is placed on the carrier upwards, and an initial detection position is defined. Wherein, the initial detection position, namely the original point, of the micro light-emitting diode testing device is defined by the positioning module. And then transferring the miniature light-emitting diode testing device to a testing point through a carrying platform, namely transferring the miniature light-emitting diode testing device to a position corresponding to a miniature light-emitting diode chip to be detected through the carrying platform.
And S20, respectively contacting the anode power supply contact and the cathode power supply contact of each test probe with two electrodes of each micro light-emitting diode chip so as to acquire the electrical parameters of each micro light-emitting diode chip. Specifically, the anode power supply contact of the test probe is contacted with the P electrode of the micro light-emitting diode chip, and the cathode power supply probe of the test probe is contacted with the N electrode of the micro light-emitting diode chip, so as to detect the micro light-emitting diode chip. And then the micro light-emitting diode testing device sequentially detects the micro light-emitting diode chips. That is, the micro light emitting diode testing device tests the micro light emitting diode chips through the testing probes individually in sequence.
In summary, the invention provides a micro light emitting diode testing device, a manufacturing method, a system and a testing method, wherein the micro light emitting diode testing device comprises a plurality of testing probes arranged at intervals, and the testing probes arranged at intervals are connected in parallel; each test probe is driven in an independent driving mode and is used for testing a micro light-emitting diode chip. The invention can test Micro LED chips in batches, obviously improves the testing efficiency, can effectively remove bad Micro LED chips and reduces the manufacturing cost.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A miniature LED testing arrangement, characterized by, includes:
the test probes are arranged at intervals and are connected in parallel;
each test probe is driven in an independent driving mode and is used for testing a micro light-emitting diode chip.
2. The micro light emitting diode testing device of claim 1, wherein the test probe comprises a driving circuit unit, an insulating layer, a positive power supply contact and a negative power supply contact; the positive power supply contact and the negative power supply contact are arranged on two sides of the upper end face of the insulating layer at intervals and are electrically connected with the driving circuit unit, the driving circuit unit is arranged on the lower end face of the insulating layer, and the upper end face and the lower end face are arranged oppositely; wherein each of the test probes is independently driven by the driving circuit unit.
3. The micro light-emitting diode testing device according to claim 2, wherein the positive power supply contacts of the spaced testing probes are connected in parallel with each other, and the negative power supply contacts of the spaced testing probes are connected in parallel with each other.
4. The micro led testing apparatus of claim 2, wherein the positive power contact and the negative power contact are adapted to contact two electrodes of the micro led chip during testing.
5. The micro light-emitting diode test device of claim 4, wherein the micro light-emitting diode chip is a flip chip, the micro light-emitting diode chip comprising a light-emitting layer, a first type semiconductor layer, a second type semiconductor layer, a first type electrode and a second type electrode; the light emitting layer is arranged between the first type semiconductor layer and the second type semiconductor layer, the first type electrode is arranged on the first type semiconductor layer, and the second type electrode is arranged on the second type semiconductor layer; in the test process, the positive power supply contact is connected with the first type electrode, and the negative power supply contact is connected with the second type electrode.
6. The micro led testing apparatus of any one of claims 2-5, wherein the pitch between the positive power contact and the negative power contact on each of the test probes is equal to the pitch between the two electrodes on each of the micro led chips.
7. The micro led testing apparatus of claim 2, wherein the insulating layer is a silicon dioxide passivation layer.
8. A method for manufacturing a micro light emitting diode testing device, applied to the micro light emitting diode testing device of any one of claims 1 to 7, comprising:
providing a driving circuit board, wherein a plurality of driving circuit units are arranged on the driving circuit board;
patterning the light resistance on the driving circuit board, and defining a positive power supply contact area and a negative power supply contact area corresponding to each driving circuit unit;
removing redundant photoresist and redundant metal by stripping gold, forming a patterned positive power supply contact in the positive power supply contact area and forming a patterned negative power supply contact in the negative power supply contact area;
manufacturing an insulating layer at the upper end of the driving circuit board, patterning the light resistance again, and defining the areas of the anode power supply contact and the cathode power supply contact;
and etching the insulating layer to expose the anode power supply contact and the cathode power supply contact.
9. A micro light emitting diode test system, comprising:
the positioning module is used for searching a detection point of the micro light-emitting diode device; the carrying platform is used for transferring the micro light-emitting diode device to a detection point; the optical equipment is used for detecting optical parameters of the micro light-emitting diode chip; an electrical device; and the micro light emitting diode test apparatus of any one of claims 1-7, electrically connected to the electrical device for testing electrical parameters of the micro light emitting diode chip through the micro light emitting diode test apparatus.
10. A method for testing a micro light-emitting diode is characterized by comprising the following steps of;
transferring a micro light-emitting diode testing device to a testing point, wherein the micro light-emitting diode testing device comprises a plurality of testing probes, each testing probe is driven in an independent driving mode, and the testing point is provided with a plurality of micro light-emitting diode chips to be tested;
and respectively contacting the anode power supply contact and the cathode power supply contact of each test probe with two electrodes of each micro light-emitting diode chip so as to acquire the electrical parameters of each micro light-emitting diode chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010299585.7A CN112967945A (en) | 2020-04-16 | 2020-04-16 | Micro light-emitting diode testing device, manufacturing method, system and testing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010299585.7A CN112967945A (en) | 2020-04-16 | 2020-04-16 | Micro light-emitting diode testing device, manufacturing method, system and testing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112967945A true CN112967945A (en) | 2021-06-15 |
Family
ID=76270869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010299585.7A Pending CN112967945A (en) | 2020-04-16 | 2020-04-16 | Micro light-emitting diode testing device, manufacturing method, system and testing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112967945A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024031819A1 (en) * | 2022-08-12 | 2024-02-15 | 福建兆元光电有限公司 | Test method for integrated micro led |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010047496A1 (en) * | 2000-05-29 | 2001-11-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor test device for conducting an operation test in parallel on many chips in a wafer test and semiconductor test method |
| US20050270055A1 (en) * | 2004-06-02 | 2005-12-08 | Salman Akram | Systems and methods for testing microelectronic imagers and microfeature devices |
| CN1956159A (en) * | 2005-10-24 | 2007-05-02 | 南茂科技股份有限公司 | Crystal wafer testing method and structure of LED |
| US20080169831A1 (en) * | 2006-06-09 | 2008-07-17 | Visera Technologies Company Limited | Batch-test system with a chip tray |
| CN103323792A (en) * | 2012-03-19 | 2013-09-25 | 鸿富锦精密工业（深圳）有限公司 | LED light bar testing fixture |
| WO2018107793A1 (en) * | 2016-12-12 | 2018-06-21 | 厦门三安光电有限公司 | Microelement transfer system, transfer method, manufacturing method, device and electronic device |
| CN109377922A (en) * | 2018-09-26 | 2019-02-22 | 京东方科技集团股份有限公司 | Wireline inspection jig and method for micro- light emitting diode base plate |
| WO2019172707A1 (en) * | 2018-03-09 | 2019-09-12 | 주식회사 나노엑스 | Led testing device and transfer device |
| CN110335831A (en) * | 2018-03-29 | 2019-10-15 | 普因特工程有限公司 | The inspection method of micro- light emitting diode |
-
2020
- 2020-04-16 CN CN202010299585.7A patent/CN112967945A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010047496A1 (en) * | 2000-05-29 | 2001-11-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor test device for conducting an operation test in parallel on many chips in a wafer test and semiconductor test method |
| US20050270055A1 (en) * | 2004-06-02 | 2005-12-08 | Salman Akram | Systems and methods for testing microelectronic imagers and microfeature devices |
| CN1956159A (en) * | 2005-10-24 | 2007-05-02 | 南茂科技股份有限公司 | Crystal wafer testing method and structure of LED |
| US20080169831A1 (en) * | 2006-06-09 | 2008-07-17 | Visera Technologies Company Limited | Batch-test system with a chip tray |
| CN103323792A (en) * | 2012-03-19 | 2013-09-25 | 鸿富锦精密工业（深圳）有限公司 | LED light bar testing fixture |
| WO2018107793A1 (en) * | 2016-12-12 | 2018-06-21 | 厦门三安光电有限公司 | Microelement transfer system, transfer method, manufacturing method, device and electronic device |
| WO2019172707A1 (en) * | 2018-03-09 | 2019-09-12 | 주식회사 나노엑스 | Led testing device and transfer device |
| CN110335831A (en) * | 2018-03-29 | 2019-10-15 | 普因特工程有限公司 | The inspection method of micro- light emitting diode |
| CN109377922A (en) * | 2018-09-26 | 2019-02-22 | 京东方科技集团股份有限公司 | Wireline inspection jig and method for micro- light emitting diode base plate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024031819A1 (en) * | 2022-08-12 | 2024-02-15 | 福建兆元光电有限公司 | Test method for integrated micro led |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109686828B (en) | Micro LED and array substrate, detection equipment and detection method thereof | |
| KR100374433B1 (en) | Device for detecting wire defects in the wiring board | |
| US20200096552A1 (en) | Line detecting tool and line detecting method for light emitting diode substrate | |
| TW201817036A (en) | Temporary carrier device, display panel, and methods of manufacturing both, and method of testing micro light emitting devices | |
| CN110095704B (en) | Device and method for detecting circuit defects in array substrate | |
| CN109670475B (en) | Light sensing module and display panel | |
| CN112582519B (en) | Transfer method and transfer equipment for micro light-emitting diode | |
| CN112649711B (en) | Detection device and method for micro light-emitting diode | |
| CN111463230A (en) | Repairing device for Micro L ED array substrate and repairing method for Micro L ED array substrate | |
| US9958478B2 (en) | Switching apparatus for electrical contact testing | |
| CN112967945A (en) | Micro light-emitting diode testing device, manufacturing method, system and testing method | |
| CN110676368B (en) | Manufacturing method of detection device and detection method | |
| US20230252922A1 (en) | Display module, crack detection method, and display apparatus | |
| US20230091748A1 (en) | Detection device and detection method | |
| US11360361B2 (en) | Array substrate motherboard and display panel moiherboard | |
| CN112635339B (en) | Micro-LED test circuit, device and method | |
| CN112578307A (en) | Light-emitting device testing device, system and testing method | |
| US20010034118A1 (en) | Method for defining windows with defferent etching depths simultaneously | |
| CN101750521A (en) | LED carrying piece and electrical property testing platform thereof | |
| CN112382207B (en) | Pixel array substrate | |
| CN101621038A (en) | Manufacturing method of active element array base plate | |
| JP2001024270A (en) | Burn-in substrate and burn-in method employing it | |
| CN113485578A (en) | Touch display panel, detection method and preparation method thereof, and display device | |
| CN114333615A (en) | Substrate mother board and preparation method thereof, driving substrate and display device | |
| CN113574673B (en) | LED display module, repairing method thereof and display equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210615 |
|
| RJ01 | Rejection of invention patent application after publication |