CN221008902U - Wafer edge etching detection device - Google Patents
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Abstract
The utility model provides a wafer edge etching detection device, which comprises a test wafer, a detection module and a processing module, wherein the test wafer is arranged on the wafer edge etching detection device; the detection modules are arranged at the top end part of the test wafer, each detection module is provided with a plurality of groups, each detection module comprises at least one sensor, the sensors in the same group of detection modules are arranged in a certain radian range along the circumferential direction of the test wafer, and the plurality of groups of detection modules are arranged with the circle center of the test wafer as the circle center and with different radiuses; the processing module is connected with the sensor, the sensor is used for being in contact with chemical agent or water for etching to generate an electric signal and sending the electric signal to the processing module, and the processing module is used for analyzing the distance between the sensor for sending the electric signal and the edge of the test wafer according to the electric signal, so that the etching width of the edge of the wafer is obtained. The device is simple and convenient to the etching width test of wafer edge, and the result is accurate effective, and the commonality is strong, can monitor multiple chemical agent and water simultaneously, and detection efficiency is high, has practiced thrift the cost input, can not cause the pollution.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a wafer edge etching detection device.
Background
With the development of semiconductor processes, the size of semiconductor devices is continuously reduced, the corresponding technology nodes are continuously improved, and the influence of the crystal edge on the process is increasingly large, for example, in the double exposure and quadruple exposure processes of complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) devices of the technology nodes of 10nm and higher, the crystal edge is one of important factors influencing the transfer effect of lithography patterns. The crystal edge etching technology is increasingly receiving attention from the semiconductor manufacturing industry because it can improve defects, breakdown, and excess stress, and the like, and it increases the yield of the manufactured semiconductor devices.
The following two points need to be strictly paid attention to in the crystal edge etching process, otherwise, the yield of the semiconductor device is affected. (1) If the crystal edge etching is uneven in the crystal edge etching process, the wafer warpage problem is caused, and further the problems of defect improvement, breakdown, excessive stress and the like cannot be solved, so that the yield of the semiconductor device cannot be improved; (2) When the wafer edge is etched, the etching width of the wafer edge needs to be strictly controlled, and if the etching width is too large, the effective area of the wafer is damaged, and the yield of the effective area is affected; if the etching width is too small, the effect of etching the crystal edge cannot be achieved, and the wafer is warped and peeled off.
The current monitoring mode of the wafer edge etching machine for etching width mainly utilizes optical edge detection to detect the actual etching width of the wafer edge by a visual means, but the mode has higher requirements on the film, and the selected film needs to react with chemical agents for etching. If the chemical agent for etching is SC1, selecting a TIN film when monitoring the etching width of the edge of the wafer; if the chemical agent for etching is DHF, an OX film can be selected when the etching width of the edge of the wafer is monitored; in contrast, when the etching chemical is DIW, the conventional thin film does not react with DIW, and thus it is necessary to use a special organic film such as AQT. It can be seen that this approach has the following disadvantages: (1) The efficiency is low, different chemical agents need to be selected from different films, and different long film machines need to be used, so that the productivity is wasted; (2) part of the organic film is at risk of polluting the machine; (3) For chemicals such as DIW, which only have a cleaning action but cannot etch away the film, position monitoring cannot be achieved.
Disclosure of utility model
The utility model aims to provide the wafer edge etching detection device which is simple and convenient in testing the etching width of the wafer edge, accurate and effective in result, wide in application range, strong in universality, capable of monitoring various chemical agents and water simultaneously, free of changing films and machines, high in detection efficiency, capable of saving cost input, free of side reaction products and free of pollution.
In order to achieve the above purpose, the wafer edge etching detection device of the present utility model includes a test wafer, a detection module and a processing module; the detection modules are arranged at the top end part of the test wafer, the detection modules are provided with a plurality of groups, each group of detection modules comprises at least one sensor, the sensors in the same group of detection modules are arranged in a certain radian range along the circumferential direction of the test wafer, and the plurality of groups of detection modules are arranged with different radiuses by taking the circle center of the test wafer as the circle center and concentric with the circle center; the processing module is electrically or communicatively connected with the sensor, the sensor is used for being in contact with chemical agent or water for etching to generate an electric signal and sending the electric signal to the processing module, and the processing module is used for analyzing the distance between the sensor for sending the electric signal and the edge of the test wafer according to the electric signal, so that the etching width of the edge of the wafer is obtained.
The wafer edge etching detection device has the beneficial effects that: the detection modules are arranged at the top end part of the test wafer, each detection module is provided with a plurality of groups, each detection module comprises at least one sensor, the sensors in the same group are arranged in a certain radian range along the circumference of the test wafer, the plurality of groups of detection modules are arranged with different radiuses by taking the circle center of the test wafer as the circle center, namely the sensors are respectively arranged at the different radiuses of the test wafer, so that the sensors are contacted with chemical agents or water for etching at the different radiuses of the test wafer to generate electric signals, the distance from the contact point of the chemical agents or water for etching to the edge of the test wafer can be judged by analyzing the electric signals at the processing module, and therefore the etching width of the edge of the wafer is obtained. The test wafer can be manufactured according to the specification of the wafer, so that the condition that chemical agents or water for etching are sprayed on the surface of the wafer is completely simulated, the process verification accuracy is improved, and the process improvement is facilitated; moreover, the device generates an electric signal through the contact of the sensor and the chemical agent or water for etching, so that different chemical agents and water can be detected, the application range is wide, the universality is strong, various chemical agents and water can be monitored simultaneously, a film and a machine are not required to be replaced, the detection efficiency is high, the cost input is saved, no side reaction products are generated, and the pollution is avoided.
Preferably, each group of the detection modules comprises at least 3 sensors, and the sensors in the same group of the detection modules are uniformly distributed on the same circumference taking the circle center of the test wafer as the circle center. The beneficial effects are that: through a plurality of sensors which are uniformly distributed on the same circumference, the chemical agent or water in each area of the test wafer can be detected, so that the uniformity of the etching of the wafer edge in the etching process of the wafer edge is monitored.
Preferably, the sensor includes any one of a galvanic cell sensor, an electrode sensor, and a nano-generator sensor. The beneficial effects are that: can be arbitrarily selected according to actual needs, has strong universality and wide application range.
Preferably, the sensor is embedded on the surface of the test wafer, and the upper surface of the sensor is flush with the upper surface of the test wafer. The beneficial effects are that: the stable rotation of the test wafer is prevented from being influenced, the injection and flow of chemical agents or water can be prevented from being influenced, and the accuracy of the test is guaranteed.
Preferably, the plurality of groups of detection modules are arranged at equal intervals along the radial direction of the test wafer, and the sensors in the same group of detection modules are arranged at equal intervals along the circumferential direction of the test wafer. The beneficial effects are that: the sensors are uniformly distributed on the test wafer, so that the detection of chemical agents or water in each area of the test wafer is facilitated, the uniformity of etching of the wafer edge in the etching process of the wafer edge is monitored, and the unstable rotation of the test wafer caused by unstable gravity center of the test wafer can be effectively prevented, namely, the rotation of the test wafer is facilitated to be stable, and the accuracy of the test is improved.
Preferably, the sensors in each group of the detection modules are respectively arranged along different radial directions of the test wafer to form a plurality of rows of sensor groups, and the included angles formed by the extension lines of the central axes of the sensor groups of adjacent rows are the same. The beneficial effects are that: the sensors are uniformly distributed on the test wafer, so that the detection of chemical agents or water in each area of the test wafer is facilitated, the uniformity of etching of the wafer edge in the etching process of the wafer edge is monitored, and the unstable rotation of the test wafer caused by unstable gravity center of the test wafer can be effectively prevented, namely, the rotation of the test wafer is facilitated to be stable, and the accuracy of the test is improved.
Preferably, each set of said detection modules comprises the same or a different number of said sensors; when the number of the sensors in each group of the detection modules is different, the number of the sensors in the detection modules is sequentially reduced from the edge of the test wafer to the circle center of the test wafer, and the number of the sensors in each group of the sensors is sequentially reduced; or when the number of the sensors in each group of detection modules is different, the sensor groups are symmetrically arranged by taking the diameter of the test wafer as a central axis. The beneficial effects are that: so as to prevent unstable rotation of the test wafer caused by unstable gravity center of the test wafer, i.e. the test wafer is favorable to be rotated stably, thereby improving the accuracy of the test.
Preferably, the distance between the detection module, which is close to the center of the circle of the test wafer, of the plurality of groups of detection modules and the edge of the test wafer along the radius direction of the test wafer is 1-5mm. The beneficial effects are that: the width of the wafer to be etched is generally 1-5mm, so that the sensor is only required to be arranged in the range of the width of the wafer to be etched, and cost investment is saved.
Preferably, the primary cell sensor includes an anode and a cathode between which an electric current is generated by a passage formed by the chemical agent or water to transmit an electric signal to the processing module; the electrode sensor comprises a first electrode and a second electrode, wherein a passage is formed between the first electrode and the second electrode through the chemical agent or water to generate current so as to send an electric signal to the processing module; the nanogenerator sensor includes a surface electrode that generates an electric current by contact with the chemical agent or water to send an electric signal to the processing module. The beneficial effects are that: the primary battery sensor, the electrode sensor and the nano generator sensor are simple in structure, good in sensitivity and high in detection accuracy of chemical agents or water.
Preferably, the nano generator sensor is in a strip structure, the nano generator sensor extends from the center of the circle of the test wafer to the edge of the test wafer along the radial direction of the test wafer, and the length of the nano generator sensor sequentially decreases along the circumferential direction of the test wafer, or the nano generator sensors with different lengths are symmetrically arranged by taking the diameter of the test wafer as a central axis. The beneficial effects are that: so as to prevent unstable rotation of the test wafer caused by unstable gravity center of the test wafer, i.e. the test wafer is favorable to be rotated stably, thereby improving the accuracy of the test.
Drawings
FIG. 1 is a block diagram of a wafer edge etching detection apparatus according to an embodiment of the present utility model;
FIG. 2 is a schematic diagram showing the distribution of the positions of the sensors on the test wafer according to the first embodiment;
FIG. 3 is a schematic diagram showing a position distribution of the sensor on the test wafer according to the second embodiment;
FIG. 4 is a schematic diagram showing a position distribution of a sensor on a test wafer according to a third embodiment;
FIG. 5 is a schematic diagram showing a position distribution of a sensor on a test wafer according to a fourth embodiment;
FIG. 6 is a schematic diagram showing a position distribution of a sensor on a test wafer according to a fifth embodiment;
Fig. 7 is a schematic structural diagram of a galvanic cell sensor in the wafer edge etching detection device according to the embodiment of the utility model;
FIG. 8 is a schematic diagram of an electrode sensor in a wafer edge etching detection apparatus according to an embodiment of the present utility model;
FIG. 9 is a schematic diagram of a nano-generator sensor in a wafer edge etching detection device according to an embodiment of the present utility model;
FIG. 10 is a schematic diagram showing a position distribution of a sensor on a test wafer according to a sixth embodiment;
FIG. 11 is an expanded view of the sensor position distribution on the test wafer shown in FIG. 10;
Fig. 12 is a schematic diagram showing a position distribution of the sensor on the test wafer according to the seventh embodiment.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions in the embodiments of the present utility model will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this utility model belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.
In order to overcome the problems in the prior art, the embodiment of the utility model provides a wafer edge etching detection device which is simple and convenient to test the etching width of the wafer edge, accurate and effective in result, wide in application range, strong in universality, capable of monitoring various chemical agents and water simultaneously, free of changing films and machines, high in detection efficiency, cost-saving, free of side reaction products and free of pollution.
FIG. 1 is a block diagram of a wafer edge etching detection apparatus according to an embodiment of the present utility model; FIG. 2 is a schematic diagram showing the distribution of the positions of the sensors on the test wafer according to the first embodiment; FIG. 3 is a schematic diagram showing a position distribution of the sensor on the test wafer according to the second embodiment; FIG. 4 is a schematic diagram showing a position distribution of a sensor on a test wafer according to a third embodiment; FIG. 5 is a schematic diagram showing a position distribution of a sensor on a test wafer according to a fourth embodiment; fig. 6 is a schematic diagram showing a position distribution of the sensor on the test wafer according to the fifth embodiment.
To achieve the above object, referring to fig. 1 to 6, the wafer edge etching detection apparatus of the present utility model includes a test wafer 1, a detection module 2, and a processing module 3; the detection modules 2 are arranged at the top end part of the test wafer 1, the detection modules 2 are provided with a plurality of groups, each group of detection modules 2 comprises at least one sensor 4, the sensors 4 in the same group of detection modules 2 are arranged in a certain radian range along the circumferential direction of the test wafer 1, and the plurality of groups of detection modules 2 are arranged with the circle center of the test wafer 1 as the circle center and with different radiuses at the same circle center; the processing module 3 is connected with the sensor 4, the sensor 4 is used for contacting with chemical agent or water for etching to generate an electric signal and sending the electric signal to the processing module 3, and the processing module 3 is used for analyzing the distance between the sensor 4 sending the electric signal and the edge of the test wafer 1 according to the electric signal, so that the etching width of the edge of the wafer is obtained.
Specifically, the detection modules are arranged at the top end part of the test wafer, the detection modules are provided with a plurality of groups, each group of detection modules comprises at least one sensor, the sensors in the same group of detection modules are arranged in a certain radian range along the circumferential direction of the test wafer, the plurality of groups of detection modules are arranged with different radiuses with the center of the circle of the test wafer as the center of the circle, namely, the sensors are respectively arranged at the different radiuses of the test wafer, so that the sensors are contacted with chemical agents or water for etching at the different radiuses of the test wafer to generate electric signals, and therefore, the distance from the contact point of the chemical agents or water for etching to the edge of the test wafer can be judged by analyzing the electric signals, so that the etching width of the edge of the wafer is obtained. The test wafer can be manufactured according to the specification of the wafer, so that the condition that chemical agents or water for etching are sprayed on the surface of the wafer is completely simulated, the process verification accuracy is improved, and the process improvement is facilitated; moreover, the device generates an electric signal through the contact of the sensor and the chemical agent or water for etching, so that different chemical agents and water can be detected, the application range is wide, the universality is strong, various chemical agents and water can be monitored simultaneously, a film and a machine are not required to be replaced, the detection efficiency is high, the cost input is saved, no side reaction products are generated, and the pollution is avoided.
In the embodiment of the utility model, the specification, the size and the thickness of the test wafer are respectively the same as those of the wafer.
In the embodiment of the present utility model, the shape of the sensor 4 is not limited to a circular structure, but may be configured in other shapes, such as a square structure, a triangle structure, etc., according to actual needs.
In some embodiments, referring to fig. 2 to 6, the plurality of groups of the detection modules 2 are disposed at equal intervals along the radial direction of the test wafer 1, and the sensors 4 in the same group of the detection modules 2 are disposed at equal intervals along the circumferential direction of the test wafer 1. The sensor 4 can be uniformly distributed on the test wafer 1, so that the detection of chemical agents or water in each area of the test wafer 1 is facilitated, the uniformity of etching at the crystal edge in the etching process is monitored, the unstable rotation of the test wafer 1 caused by unstable gravity center of the test wafer 1 can be effectively prevented, namely, the rotation of the test wafer 1 is facilitated to be stable, and the test accuracy is improved.
In some embodiments, referring to fig. 2 to 6, the sensors 4 in each group of the detection modules 2 are respectively disposed along different radial directions of the test wafer 1 to form a plurality of rows of sensor groups 5, and the included angles formed by the extension lines of the central axes of the sensor groups 5 in each adjacent row are the same. The sensors 4 are uniformly distributed on the test wafer 1, so that the detection of chemical agents or water in each area of the test wafer 1 is facilitated, the uniformity of etching at the crystal edge in the etching process is monitored, the unstable rotation of the test wafer 1 caused by unstable gravity center of the test wafer 1 can be effectively prevented, namely, the rotation of the test wafer 1 is facilitated to be stable, and the test accuracy is improved.
In some embodiments, referring to fig. 2 to 4, each set of said detection modules 2 comprises the same number of said sensors 4.
In some specific embodiments, referring to fig. 2, the detection modules 2 in the first wafer edge etching detection device are provided with 8 groups, each group of detection modules 2 includes 1 sensor 4, and 8 sensors 4 are respectively disposed along different radial directions of the test wafer 1, so as to form 8 rows of sensor groups 5, that is, each row of sensor groups 5 includes 1 sensor 4, and an included angle a1 formed by extension lines of central axes of the sensor groups 5 in each adjacent row is the same.
In other embodiments, referring to fig. 3, the second wafer edge etching detection apparatus is different from the first wafer edge etching detection apparatus shown in fig. 2 in that: the detection modules 2 in the second wafer edge etching detection device are provided with 8 groups, each group of detection modules 2 comprises 8 sensors 4, 8 sensors 4 in each group of detection modules 2 are arranged along different radial directions of the test wafer 1, and 8 directions of 8 sensors 4 in each group of detection modules 2 are the same, namely, the sensors 4 in the detection modules 2 in the second wafer edge etching detection device form 8 rows of sensor groups, each row of sensor groups 5 comprises 8 sensors 4, and an included angle a2 formed by extension lines of central axes of the sensor groups 5 of each adjacent row is the same.
In still other embodiments, referring to fig. 4, the third wafer edge etching detection apparatus is different from the second wafer edge etching detection apparatus shown in fig. 3 in that: the detection modules 2 in the third wafer edge etching detection device are provided with 8 groups, which include a first group of detection modules 21, a second group of detection modules 22, a third group of detection modules 23, a fourth group of detection modules 24, a fifth group of detection modules 25, a sixth group of detection modules 26, a seventh group of detection modules 27 and an eighth group of detection modules 28, which are sequentially arranged from the edge of the test wafer 1 towards the center of the test wafer 1, wherein the arrangement directions of 8 sensors 4 in each group of detection modules 2 are different, 8 directions of 8 sensors 4 in the first group of detection modules 21, the third group of detection modules 23, the fifth group of detection modules 25 and the seventh group of detection modules 27 are the same, 8 directions of 8 sensors 4 in the second group of detection modules 22, the fourth group of detection modules 24, the sixth group of detection modules 26 and the eighth group of detection modules 28 are the same, namely, the arrangement directions of 8 sensors 16 in the detection modules 2 in the third wafer edge detection device are the same, and the sensor arrays 4 in each sensor array form an extension line 5 of sensors 4, and each sensor array 5 is formed by the same.
In other embodiments, referring to fig. 5 and 6, each set of said detection modules 2 comprises a different number of said sensors 4.
In some embodiments, referring to fig. 5, each group of the detecting modules 2 in the fourth wafer edge etching detecting device includes a different number of the sensors 4, the number of the sensors 4 in the detecting module 2 is sequentially reduced from the edge of the test wafer 1 toward the center of the circle of the test wafer 1, and the number of the sensors 4 in each sensor group 5 is sequentially reduced, so as to prevent the unstable center of gravity of the test wafer 1 and cause unstable rotation of the test wafer 1, i.e. facilitate the rotation of the test wafer 1 to be stable, thereby improving the accuracy of the test.
In other embodiments, referring to fig. 6, each group of the detecting modules 2 in the fifth wafer edge etching detecting device includes a different number of sensors 4, and the sensor groups 5 are symmetrically disposed with the diameter of the test wafer 1 as the central axis 6, so as to prevent the unstable rotation of the test wafer 1 caused by unstable center of gravity of the test wafer 1, i.e. facilitate the stable rotation of the test wafer 1, thereby improving the accuracy of the test.
Specifically, the principle of detecting the etching width of the wafer edge by the wafer edge etching detection device is as follows:
Taking fig. 4 as an example, when only the sensors 4 in the first group of detection modules 21 are in contact with the chemical agent or water for etching, an electrical signal is generated and sent to the processing module 3, the processing module 3 analyzes the electrical signal according to the electrical signal, and the distance between the sensors 4 in the first group of detection modules 21 sending the electrical signal and the edge of the test wafer 1 is L1, and the sensors 4 in the second group of detection modules 21 do not send the electrical signal, so that the width of the chemical agent or water for etching sprayed on the test wafer is equal to L1, thereby obtaining the value of the etching width of the edge of the wafer being L1.
When the sensors 4 in the first, second, third and fourth groups of detection modules 21, 22, 23 and 24 are in contact with the chemical agent or water for etching, an electrical signal is generated and sent to the processing module 3, and the processing module 3 analyzes the electrical signal according to the electrical signal, and the distances between the sensors 4 in the first, second, third and fourth groups of detection modules 21, 22, 23 and 24 and the edge of the test wafer 1 are L1, L2, L3 and L4, respectively, so that the width of the chemical agent or water for etching sprayed on the test wafer is equal to L4, thereby obtaining the etching width value of the edge of the wafer being L4.
In some embodiments, referring to fig. 3 and 4, each group of the detection modules 2 includes at least 3 sensors 4, and the sensors 4 in the same group of the detection modules 2 are uniformly distributed on the same circumference centered on the center of the test wafer 1. Through a plurality of sensors 4 uniformly distributed on the same circumference, the chemical agent or water in each area of the test wafer 1 can be detected, so that the uniformity of the etching of the wafer edge in the etching process of the wafer edge is monitored.
Specifically, the principle of detecting the etching uniformity of the wafer edge by the wafer edge etching detection device is as follows:
When only a part of the sensors 4 in the sensor group 5 of the first group of detection modules 21 are in contact with the chemical agent or water for etching, an electric signal is generated and sent to the processing module 3, the processing module 3 finds that only a part of the sensors 4 in the first group of detection modules 21 send an electric signal according to the analysis of the electric signal, and analyzes to obtain that the sensors 4 in a part of the sensor group 5 of the first group of detection modules 21 are not sprayed with the chemical agent or water for etching, so that the uneven etching of the wafer edge can be known.
In some embodiments, the distance between the detection module near the center of the test wafer and the edge of the test wafer in the radial direction of the test wafer in the plurality of groups of detection modules is 1-5mm, and the width of the wafer to be etched is generally 1-5mm, so that only a sensor is required to be arranged within the range of the width of the wafer to be etched, and cost investment is saved.
In some embodiments, the distance between the detection module, which is close to the center of the test wafer, of the plurality of groups of detection modules and the edge of the test wafer along the radius direction of the test wafer is 2-3mm.
In some embodiments, the sensor includes any one of a primary battery sensor, an electrode sensor and a nano generator sensor, and the sensor can be arbitrarily selected according to actual needs, so that the sensor has strong universality and wide application range.
Fig. 7 is a schematic structural diagram of a galvanic cell sensor in the wafer edge etching detection device according to the embodiment of the utility model.
In some embodiments, referring to fig. 7, the primary cell sensor 41 includes an anode 411 and a cathode 412, and a current is generated between the anode 411 and the cathode 412 by forming a path through the chemical agent or water 7 to send an electrical signal to the processing module 3.
Specifically, when the chemical agent or water 7 is sprayed between the anode 411 and the cathode 412 of a certain cell sensor 41, the anode 411 and the cathode 412 communicate to form a passage to generate an electric current, a current signal is detected by the processing module 3, and the number and coordinates of the cell sensor 41 are recorded. The processing module 3 reads and analyzes the serial number and the coordinate of the primary cell sensor 41 on the test wafer, so that the distance between the primary cell sensor 41 and the edge of the test wafer can be known, and the etching width of the edge of the wafer can be obtained.
Fig. 8 is a schematic structural diagram of an electrode sensor in the wafer edge etching detection device according to an embodiment of the present utility model.
In some embodiments, referring to fig. 8, the electrode sensor 42 includes a first electrode 421 and a second electrode 422, and a current is generated between the first electrode 421 and the second electrode 422 by forming a path through the chemical agent or water 7 to send an electrical signal to the processing module 3. Wherein the electrode sensor is also connected to an ammeter 423 and a power source 424.
Specifically, when the chemical agent or water 7 is sprayed between the first electrode 421 and the second electrode 422 of a certain electrode sensor 42, the first electrode 421 and the second electrode 422 communicate to form a path to generate an electric current, the electric current signal is detected by the processing module 3, and the number and coordinates of the electrode sensor 42 are recorded. The processing module 3 reads and analyzes the number and the coordinates of the electrode sensor 42 on the test wafer, so that the distance between the electrode sensor 42 and the edge of the test wafer can be known, and the etching width of the edge of the wafer can be obtained.
Fig. 9 is a schematic structural diagram of a nano-generator sensor in a wafer edge etching detection device according to an embodiment of the present utility model.
In some embodiments, referring to fig. 9, the nanogenerator sensor 43 includes a surface electrode 431, and the surface electrode 431 generates an electric current by contacting with the chemical agent or water 7 to transmit an electric signal to the processing module 3.
Specifically, the nano-generator sensor further includes a metal electrode disposed on the lower surface of the surface electrode 431, where the metal electrode includes a metal anode 432 and a metal cathode 433. When the chemical agent or water 7 is sprayed on the surface electrode 431 of a certain nano-generator sensor 43, negative charges are generated on the surface of the surface electrode 431 due to contact and energization, positive charges are induced into the metal electrode, the metal anode 432 and the metal cathode 433 are communicated to form a passage to generate current, the current is detected by the processing module 3, and the number and the coordinates of the nano-generator sensor 43 are recorded. The processing module 3 reads and analyzes the number and the coordinate of the nano generator sensor 43 on the test wafer, so that the distance between the nano generator sensor 43 and the edge of the test wafer can be known, and the etching width of the edge of the wafer can be obtained.
In some embodiments, the surface electrode is made of Polytetrafluoroethylene (PTFE) or fluorinated ethylene propylene copolymer (FEP).
In some embodiments, the nanogenerator sensor is a single electrode mode liquid-solid triboelectric nanogenerator (TENG) comprising PTFE, copper electrodes and a glass substrate, the mechanism by which the triboelectric nanogenerator generates electricity can be explained as the occurrence and immersion of the nanogenerator sensor in a liquid that generates contact energization and electrostatic induction, driving the electronic exchange between the triboelectrodes (copper electrodes) and the ground. PTFE is a highly negatively charged material, when PTFE is in contact with a liquid (such as water), the PTFE surface will develop a negative charge due to contact energization, and the negatively charged layer of PTFE surface will not dissipate for a long period of time, even if TENG is extracted from the water. In this case, positive charges are induced into the copper electrode to maintain electrostatic balance. When TENG is gradually inserted into water again, the negatively charged layer of the PTFE surface will be partially shielded by the formation of an electric double layer, which will induce electrons to flow from ground to the copper electrode, thereby re-neutralizing the unbalanced charge distributed between the triboelectric layer and the copper electrode. When the copper electrode is completely immersed in water, the process reaches an equilibrium state. When TENG is drawn from the water, the positive charge in the water at the PTFE-water interface will be removed from the PTFE surface due to the good hydrophobicity of the PTFE, while the negative charge remains on the PTFE surface to maintain electrostatic balance and electrons will be induced to flow from the copper electrode to ground until equilibrium is reached when the electrode is fully dehydrated.
FIG. 10 is a schematic diagram showing a position distribution of a sensor on a test wafer according to a sixth embodiment; FIG. 11 is an expanded view of the sensor position distribution on the test wafer shown in FIG. 10.
In some embodiments, referring to fig. 10 and 11, the sensor 4 in the sixth wafer edge etching detection device is a nano generator sensor 43, the nano generator sensor 43 is in a strip structure, the nano generator sensor extends along the radial direction of the test wafer 1 and from the center of the test wafer 1 to the edge of the test wafer 1, and the length of the nano generator sensor 43 sequentially decreases along the circumferential direction of the test wafer 1, so as to prevent the unstable rotation of the test wafer 1 caused by the unstable center of gravity of the test wafer 1, i.e. be beneficial to stabilizing the rotation of the test wafer 1, thereby improving the accuracy of the test.
Fig. 12 is a schematic diagram showing a position distribution of the sensor on the test wafer according to the seventh embodiment.
In some embodiments, referring to fig. 12, the sensor 4 in the seventh wafer edge etching detection device is a nano generator sensor 43, the nano generator sensor 43 is in a strip structure, the nano generator sensor extends from the center of the circle of the test wafer 1 to the edge of the test wafer 1 along the radial direction of the test wafer 1, and the nano generator sensors 43 with different lengths are symmetrically arranged with the diameter of the test wafer 1 as a central axis, so as to prevent the unstable rotation of the test wafer 1 caused by unstable gravity center of the test wafer 1, i.e. be beneficial to stabilizing the rotation of the test wafer 1, thereby improving the accuracy of the test.
The principle that the nano generator sensor with the strip-shaped structure detects the etching width of the edge of the wafer is as follows:
When the nano generator sensor with the first length and the nano generator sensor with the second length are in contact with chemical agent or water for etching, an electric signal is generated and sent to the processing module 3, the processing module 3 analyzes and sends the electric signal according to the electric signal, the distances between the nano generator sensor with the first length and the nano generator sensor with the second length and the edge of the test wafer 1 are L5 and L6 respectively, and the chemical agent or water for etching is obtained, and the width of the chemical agent or water sprayed on the test wafer is equal to L6, so that the etching width value of the edge of the wafer is L6.
In some embodiments, the nano-generator sensor 43 further includes a circular structure or other square and triangular structures as shown in fig. 2-6.
In some embodiments, referring to fig. 2 to 6, the sensor 4 is embedded on the surface of the test wafer 1, and the upper surface of the sensor 4 is disposed flush with the upper surface of the test wafer 1. The stable rotation of the test wafer 1 is prevented from being influenced, the injection and flow of chemical agents or water can be prevented from being influenced, and the accuracy of the test is guaranteed.
In some embodiments, the processing module is electrically connected or communicatively connected with the sensor, and can be selectively set according to actual needs, so that the processing module is strong in universality and wide in application range.
In some embodiments, when the processing module is electrically connected to the sensor, the wafer edge etching detection device further includes a data reading module and a reading portion, where the processing module is embedded in a center of the test wafer, as shown in fig. 10 and fig. 12, and the reading portion is disposed on a back of the test wafer and is connected to the processing module, and the data reading module is configured to read etching width information of an edge of the wafer stored in the processing module.
In some embodiments, when the processing module is electrically connected to the sensor, an upper surface of the processing module is disposed flush with an upper surface of the test wafer.
In some embodiments, when the processing module is communicatively connected to the sensor, the wafer edge etching detection device further includes a communication module, and the sensor sends an electrical signal to the processing module through the communication module. Specifically, the structure and arrangement manner of the communication module are conventional means in the art, and are not described herein. At this time, the etching width information of the wafer edge obtained by the analysis of the processing module can be directly read out through the display module.
While embodiments of the present utility model have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present utility model as set forth in the following claims. Moreover, the utility model described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (10)
1. The wafer edge etching detection device is characterized by comprising a test wafer, a detection module and a processing module;
the detection modules are arranged at the top end part of the test wafer, the detection modules are provided with a plurality of groups, each group of detection modules comprises at least one sensor, the sensors in the same group of detection modules are arranged in a certain radian range along the circumferential direction of the test wafer, and the plurality of groups of detection modules are arranged with different radiuses by taking the circle center of the test wafer as the circle center and concentric with the circle center;
The processing module is electrically or communicatively connected with the sensor, the sensor is used for being in contact with chemical agent or water for etching to generate an electric signal and sending the electric signal to the processing module, and the processing module is used for analyzing the distance between the sensor for sending the electric signal and the edge of the test wafer according to the electric signal, so that the etching width of the edge of the wafer is obtained.
2. The wafer edge etching detection apparatus according to claim 1, wherein each group of the detection modules includes at least 3 of the sensors, and the sensors in the same group of the detection modules are uniformly distributed on the same circumference with the center of the test wafer as the center of the circle.
3. The wafer edge etching detection apparatus of claim 1, wherein the sensor comprises any one of a galvanic cell sensor, an electrode sensor, and a nano-generator sensor.
4. The wafer edge etching detection device according to claim 1, wherein the sensor is embedded in the surface of the test wafer, and an upper surface of the sensor is flush with an upper surface of the test wafer.
5. The wafer edge etching detection apparatus according to claim 1, wherein the plurality of groups of the detection modules are arranged at equal intervals along a radial direction of the test wafer, and the sensors in the same group of the detection modules are arranged at equal intervals along a circumferential direction of the test wafer.
6. The wafer edge etching detection device according to claim 1, wherein the sensors in each group of the detection modules are respectively arranged along different radial directions of the test wafer to form a plurality of rows of sensor groups, and angles formed by extension lines of central axes of the sensor groups in adjacent rows are the same.
7. The wafer edge etching detection apparatus of claim 6, wherein each set of the detection modules includes the same number or a different number of the sensors;
When the number of the sensors in each group of the detection modules is different, the number of the sensors in the detection modules is sequentially reduced from the edge of the test wafer to the circle center of the test wafer, and the number of the sensors in each group of the sensors is sequentially reduced; or when the number of the sensors in each group of detection modules is different, the sensor groups are symmetrically arranged by taking the diameter of the test wafer as a central axis.
8. The wafer edge etching detection device according to claim 1, wherein the distance between the detection module, which is close to the center of the test wafer, among the plurality of groups of detection modules and the test wafer edge along the radius direction of the test wafer is 1-5mm.
9. The wafer edge etching detection apparatus of claim 3, wherein the galvanic cell sensor comprises an anode and a cathode, a current being generated between the anode and the cathode by the chemical agent or water forming a path to send an electrical signal to the processing module;
The electrode sensor comprises a first electrode and a second electrode, wherein a passage is formed between the first electrode and the second electrode through the chemical agent or water to generate current so as to send an electric signal to the processing module;
The nanogenerator sensor includes a surface electrode that generates an electric current by contact with the chemical agent or water to send an electric signal to the processing module.
10. The wafer edge etching detection device according to claim 3 or 9, wherein the nano generator sensor has a strip structure, the nano generator sensor extends from a center of a circle of the test wafer to an edge of the test wafer along a radius direction of the test wafer, and a length of the nano generator sensor sequentially decreases along a circumferential direction of the test wafer, or the nano generator sensors with different lengths are symmetrically arranged with a diameter of the test wafer as a central axis.
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