CN1956159A - Crystal wafer testing method and structure of LED - Google Patents
Crystal wafer testing method and structure of LED Download PDFInfo
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- CN1956159A CN1956159A CNA200510114523XA CN200510114523A CN1956159A CN 1956159 A CN1956159 A CN 1956159A CN A200510114523X A CNA200510114523X A CN A200510114523XA CN 200510114523 A CN200510114523 A CN 200510114523A CN 1956159 A CN1956159 A CN 1956159A
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- 238000012360 testing method Methods 0.000 title claims abstract description 70
- 239000013078 crystal Substances 0.000 title claims description 86
- 239000002390 adhesive tape Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims description 58
- 230000003287 optical effect Effects 0.000 claims description 22
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 238000004382 potting Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- 239000013307 optical fiber Substances 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 15
- 238000005520 cutting process Methods 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 91
- 238000010998 test method Methods 0.000 description 8
- 238000013461 design Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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Abstract
A method for testing grade of chip on LED includes sticking an adhesive tape at back said chip, cutting it to be multiple LED chip with adhesive tape, contacting P type and N type of electrodes on those chips by detection card with multiple detection structures in ohm mode, setting a light detector on each of said detection structure, setting these light detector correspondingly above those chips and using them to detect light source emitted by those Led chips.
Description
Technical field
The present invention relates to a kind of method of testing and structure of light-emitting diode, particularly relate to a kind of crystal wafer testing method and structure of light-emitting diode.
Background technology
Existing known light-emitting diode (Light Emitting Diode is to be made of the P-N bond semiconductor LED), when electric current luminous immediately from the P effluent to the N side, and can the high efficiency light source that converts electric energy to.Have the manufacturing process of known light-emitting diode now, be to prepare a LED semiconductor crystal wafer earlier, wafer is cut into after the led chip, rearrange on a banded conveyer belt, contact the P type electrode and the N type electrode of single led chip with the two ends probe, test its whether luminous after, traveling probe and test next LEDs chip again, so it is to test each led chip to put the survey mode one by one, testing time is tediously long, next each led chip is placed on individually on the substrate (or lead frame), routing electrically connects this led chip and substrate (or lead frame), seals this led chip with transparent resin or glass cover again, the last led chip of testing again after once having encapsulated, need quite multiple different carrying kenel in its processing procedure and the test, and cause making with tester table too much, and efficient is clear.
This shows that the method for testing of above-mentioned existing light-emitting diode and be configured in method of testing, product structure and use obviously still has inconvenience and defective, and demands urgently further being improved.For method of testing that solves light-emitting diode and the problem of constructing existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and the method for testing of general light-emitting diode and structure do not have appropriate method of testing and structure to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that the method for testing of above-mentioned existing light-emitting diode and structure exist, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of crystal wafer testing method and structure of new light-emitting diode, can improve the method for testing and the structure of general existing light-emitting diode, make it have more practicality.Through constantly research, design, and after studying repeatedly and improving, create the present invention who has practical value finally.
Summary of the invention
Main purpose of the present invention is, overcome the defective of the method for testing existence of existing light-emitting diode, and provide a kind of crystal wafer testing method of new light-emitting diode, technical problem to be solved is to make it can reach a large amount of and a plurality of light-emitting diodes of wafer-level test apace, thereby is suitable for practicality more.
Another object of the present invention is to, a kind of crystal wafer testing method of light-emitting diode is provided, technical problem to be solved is it can be reached test the LED crystal covered chip in a large number and apace, thereby is suitable for practicality more.
An also purpose of the present invention is, a kind of wafer scale structure of light-emitting diode is provided, technical problem to be solved is it can be visited in wafer frontside touch indivedual LED crystal covered chips and positive acceptance test light source, reaches the test of LED crystal circle grade, thereby is suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.The crystal wafer testing method of a kind of light-emitting diode (LED) that proposes according to the present invention, it comprises the steps: to provide a LED semiconductor crystal wafer, this LED semiconductor crystal wafer has a positive and back side, and this front is provided with a plurality of P type electrodes and a plurality of N type electrode; Attach the back side of an adhesive tape in this LED semiconductor crystal wafer; Cut this LED semiconductor crystal wafer and form a plurality of led chips on this adhesive tape; And test those led chips with a detecting card, this detecting card includes a plurality of spies and touches structure, each spy is touched structure and is had a plurality of spy contraventions and an optical detector, those visit contravention is those P type electrodes and those N type electrodes of those led chips of ohmic contact, and those optical detectors are to be located at corresponding the spy to touch between the spy contravention of structure, apply and give those led chips when a voltage touches structure by those spies, those optical detectors are light sources that those led chips of detecting take place.
The object of the invention to solve the technical problems also is further achieved by the following technical measures.
The crystal wafer testing method of aforesaid light-emitting diode, P type electrode that wherein said those contact jaws are all those led chips of ohmic contact and N type electrode, and those optical detectors are to aim at and be adjacent to those led chips.
The crystal wafer testing method of aforesaid light-emitting diode, wherein said each optical detector has an optical fiber transfer tube.
The crystal wafer testing method of aforesaid light-emitting diode, wherein said LED semiconductor crystal wafer includes a potting resin layer, and it is for transparent.
The crystal wafer testing method of aforesaid light-emitting diode, wherein said those P type electrodes and those N type electrodes include projection.
The object of the invention to solve the technical problems also realizes by the following technical solutions.The wafer scale structure of a kind of light-emitting diode (LED) that proposes according to the present invention, it comprises: a LED semiconductor substrate, this LED semiconductor substrate have a positive and back side, and this front is provided with a plurality of P type electrodes and a plurality of N type electrode; And a transparent potting resin layer, it is formed at the front of this LED semiconductor substrate.
The object of the invention to solve the technical problems also is further achieved by the following technical measures.
The wafer scale structure of aforesaid light-emitting diode, a wherein said adhesive tape is the back side that is attached at this LED semiconductor substrate.
The wafer scale structure of aforesaid light-emitting diode, wherein said those P type electrodes and those N type electrodes include projection.
The wafer scale structure of aforesaid light-emitting diode, wherein said those P type electrodes and those N type electrodes are to be raised in this potting resin layer.
The wafer scale structure of aforesaid light-emitting diode, wherein said those P type electrodes and those N type electrodes are for contour.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to achieve the above object, the invention provides a kind of crystal wafer testing method of light-emitting diode, at first, provide a LED semiconductor crystal wafer, this LED semiconductor crystal wafer has a positive and back side, and this front is provided with a plurality of P type electrodes and a plurality of N type electrode; Next, an adhesive tape is attached at the back side of this LED semiconductor crystal wafer, cuts this LED semiconductor crystal wafer again and form a plurality of led chips on this adhesive tape; Afterwards, test those led chips with a detecting card, this detecting card includes a plurality of spies and touches structure, this each spy is touched structure and is had a plurality of spy contraventions and an optical detector, those visit contravention is those P type electrodes and those N type electrodes of those led chips of ohmic contact, preferably, be those P type electrodes and those N type electrodes that contacts those led chips fully, and those optical detectors are to be located at corresponding the spy to touch between the spy contravention of structure, apply and give those led chips when a voltage touches structure by those spies, detect the light source that those led chips take place by those optical detectors.This LED semiconductor crystal wafer can be bare silicon wafer or the wafer of encapsulated semiconductor that includes the potting resin layer.
By technique scheme, the crystal wafer testing method of light-emitting diode of the present invention and structure have following advantage at least:
The crystal wafer testing method of light-emitting diode of the present invention, be that to make one LED semiconductor crystal wafer be to be attached at an adhesive tape to cut into a plurality of led chips again, with a P type electrode and the N type electrode with those led chips of detecting card ohmic contact (ohmic contact) of optical detector, those optical detectors are light sources that those led chips of detecting send, and can reach a large amount of and a plurality of light-emitting diodes of wafer-level test apace, thereby be suitable for practicality more.
The crystal wafer testing method of light-emitting diode of the present invention, be that P type electrode and N type electrode on a LED semiconductor crystal wafer front includes projection, and provide the led chip (promptly the back side of this LED semiconductor crystal wafer is light-emitting area) of a plurality of flip chip type attitudes, on the front of this LED semiconductor crystal wafer, carry out test of light source with a detecting card with optical detector, and can reach a large amount of and test the LED crystal covered chip apace, thereby be suitable for practicality more.
The wafer scale structure of light-emitting diode of the present invention, be to be provided with a plurality of P type electrodes and a plurality of N type electrode in the front of a LED semiconductor substrate, and transparent potting resin series of strata are formed at the front of this semiconductor substrate, reach positive wafer scale and visit the light source that touches with positive and accept detection, but and can carry out test low-cost and volume production the LED crystal covered chip.In addition, the LED crystal covered chip can contaminated or scratch when spy is touched under the protection of this transparent potting resin layer.
In sum, the crystal wafer testing method of the light-emitting diode that the present invention is special, it at first provides a LED semiconductor crystal wafer, one adhesive tape is attached to the back side of this LED semiconductor crystal wafer, cut this LED semiconductor crystal wafer again and become a plurality of led chips on this adhesive tape, when those led chips of test, touch the P type electrode and the N type electrode of those led chips of structure ohmic contact with a plurality of spies of a detecting card, each spy is touched structure and is included an optical detector, it is the top corresponding to those led chips, in order to detect the light source that those led chips take place.The present invention can reach a large amount of and a plurality of light-emitting diodes of wafer-level test apace, and it can also reach a large amount of and the effect of testing the LED crystal covered chip apace.The wafer scale structure of light-emitting diode of the present invention can be visited in wafer frontside and touch indivedual LED crystal covered chips and positive acceptance test light source, reaches the test of LED crystal circle grade.It has above-mentioned many advantages and practical value, and in similar method of testing and product, do not see have similar method of testing and structural design to publish or use and really genus innovation, no matter it all has bigger improvement on method of testing, product structure or function, have large improvement technically, and produced handy and practical effect, and the method for testing of more existing light-emitting diode and structure have the multinomial effect of enhancement, thereby be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the crystal wafer testing method according to light-emitting diode of the present invention, the schematic cross-section of the LED semiconductor crystal wafer that is provided.
Fig. 2 is the crystal wafer testing method according to light-emitting diode of the present invention, the schematic cross-section of this LED semiconductor crystal wafer after attaching an adhesive tape.
Fig. 3 is the crystal wafer testing method according to light-emitting diode of the present invention, the schematic cross-section of this LED semiconductor crystal wafer after the wafer cutting.
Fig. 4 is the crystal wafer testing method according to light-emitting diode of the present invention, the schematic cross-section of this LED semiconductor crystal wafer in the detecting card test process.
10:LED semiconductor crystal wafer 11: front
12: back side 13:P type electrode
14:N type electrode 15:LED chip
16: potting resin layer 17: connection pad
20: adhesive tape 30: cutting tool
40: detecting card 41: visit and touch structure
42: contact jaw 43: optical detector
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, the crystal wafer testing method of the light-emitting diode that foundation the present invention is proposed and construct its embodiment, method of testing, step, structure, feature and effect, describe in detail as after.
Seeing also shown in Figure 1ly, is the schematic cross-section according to the LED semiconductor crystal wafer that crystal wafer testing method provided of light-emitting diode of the present invention.Crystal wafer testing method according to light-emitting diode of the present invention, it mainly may further comprise the steps: at first, (LED is the abbreviation for Light Emitting Diode to provide a LED semiconductor crystal wafer 10, or title light-emitting diode), this LED semiconductor crystal wafer 10 has positive 11 and one back side 12, this LED semiconductor crystal wafer 10 includes a substrate layer and by III, V family semiconductor or the P type layer and the N type layer (not drawing among the figure) that constitute by impurity, existing known liquid phase is grown up or the vapour phase growing method all can make this P type layer and this N type layer, the front 11 of this LED semiconductor crystal wafer 10 is provided with a plurality of P type electrodes 13 and a plurality of N type electrode 14, electrically connect this P type layer and this N type layer respectively, in the present embodiment, this LED semiconductor crystal wafer 10 is a kind of wafers through the wafer-level packaging processing procedure, one transparent potting resin layer 16 is the fronts 11 that are formed at LED semiconductor crystal wafer 10, preferably, this transparent potting resin layer 16 can include fluorescent material, to change LED semiconductor crystal wafer 10 (led chips 15, the light source colour that is sent as shown in Figure 3), and another potting resin layer 16 is the back side 12 that can be formed at LED semiconductor crystal wafer 10, and those P type electrodes 13 can be projection or metal gasket with those N type electrodes 14, in the present embodiment, those P type electrodes 13 are for protruding from the projection of potting resin layer 16 with those N type electrodes 14, it is to be electrically conducted connection pad 17 to LED semiconductor crystal wafer 10 by this potting resin layer 16, those P type electrodes 13 and those N type electrodes 14 again with contour be preferable.
Next, seeing also shown in Figure 2ly, is the schematic cross-section according to the crystal wafer testing method of light-emitting diode of the present invention this LED semiconductor crystal wafer after attaching an adhesive tape, an adhesive tape 20 is attached at the back side 12 of LED semiconductor crystal wafer 10, this adhesive tape 20 is to have tackness, for example UV adhesive tape.See also shown in Figure 3 again, it is schematic cross-section according to crystal wafer testing method this LED semiconductor crystal wafer after the wafer cutting of light-emitting diode of the present invention, form a plurality of led chips 15 on adhesive tape 20 with cutting tool 30 cutting LED semiconductor crystal wafers 10, make each led chip 15 include at least one P type electrode 13 and at least one N type electrode 14, and make that the P type layer of adjacent led chip 15 and N type layer are electrically independent.
Next, see also shown in Figure 4, it is schematic cross-section according to crystal wafer testing method this LED semiconductor crystal wafer in the detecting card test process of light-emitting diode of the present invention, with a detecting card 40 those led chips 15 of test, this detecting card 40 includes a plurality of spies and touches structure 41, this each spy is touched structure 41 and is had a plurality of spy contraventions 42 and an optical detector 43, those visit contravention 42 is to be probe or testing bump, each optical detector 43 has an optical fiber transfer tube (glass fabric tube), in the present embodiment, it is fully corresponding those led chips 15 that structure 41 is touched in those spies, in the process of test, those visit those P type electrodes 13 and those N type electrodes 14 that contravention 42 is those led chips 15 of ohmic contact (ohmic contact), preferably, those visit contraventions 42 is to contact fully or subregion contacts those P type electrodes 13 and those N type electrodes 14 of those led chips 15, and those optical detectors 43 are to be arranged at corresponding the spy to touch between the spy contravention 42 of structure 41, apply and give those led chips 15 when a voltage touches structure 41 by those spies, those led chips 15 will send light source, by the brightness and the form and aspect of those those led chips 15 generation light sources of optical detector 43 detectings, to differentiate the very bad of product.In addition, except the wafer of finishing wafer-level packaging, the crystal wafer testing method of light-emitting diode of the present invention can be used in the LED semiconductor crystal wafer of bare silicon wafer, it comprises the LED bare chip of a plurality of for example routing kenels or flip chip type attitude, its testing efficiency is far above surveyed one by one as prior art in the past, and can test a LED semiconductor crystal wafer with holocrystalline circle ohmic contact or block ohmic contact, can significantly shorten the testing time, and can reach the wafer utmost point test of led chip or led chip size packaging structure.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (10)
1, the crystal wafer testing method of a kind of light-emitting diode (LED) is characterized in that it may further comprise the steps:
One LED semiconductor crystal wafer is provided, and this LED semiconductor crystal wafer has a positive and back side, and this front is provided with a plurality of P type electrodes and a plurality of N type electrode;
Attach the back side of an adhesive tape in this LED semiconductor crystal wafer;
Cut this LED semiconductor crystal wafer and form a plurality of led chips on this adhesive tape; And
Test those led chips with a detecting card, this detecting card includes a plurality of spies and touches structure, each spy is touched structure and is had a plurality of spy contraventions and an optical detector, those visit contravention is those P type electrodes and those N type electrodes of those led chips of ohmic contact, and those optical detectors are to be located at corresponding the spy to touch between the spy contravention of structure, apply and give those led chips when a voltage touches structure by those spies, those optical detectors are light sources that those led chips of detecting take place.
2, the crystal wafer testing method of light-emitting diode according to claim 1, it is characterized in that P type electrode and N type electrode that wherein said those contact jaws are all those led chips of ohmic contact, and those optical detectors are to aim at and be adjacent to those led chips.
3, the crystal wafer testing method of light-emitting diode according to claim 1 is characterized in that wherein said each optical detector has an optical fiber transfer tube.
4, the crystal wafer testing method of light-emitting diode according to claim 1 is characterized in that wherein said LED semiconductor crystal wafer includes a potting resin layer, and it is for transparent.
5, the crystal wafer testing method of light-emitting diode according to claim 1 is characterized in that wherein said those P type electrodes and those N type electrodes include projection.
6, the wafer scale of a kind of light-emitting diode (LED) structure is characterized in that it comprises:
One LED semiconductor substrate, this LED semiconductor substrate have a positive and back side, and this front is provided with a plurality of P type electrodes and a plurality of N type electrode; And
One transparent potting resin layer, it is formed at the front of this LED semiconductor substrate.
7, the wafer scale of light-emitting diode according to claim 6 structure is characterized in that a wherein said adhesive tape is the back side that is attached at this LED semiconductor substrate.
8, the wafer scale of light-emitting diode according to claim 6 structure is characterized in that wherein said those P type electrodes and those N type electrodes include projection.
9, the wafer scale of light-emitting diode according to claim 8 structure is characterized in that wherein said those P type electrodes and those N type electrodes are to be raised in this potting resin layer.
10, the wafer scale of light-emitting diode according to claim 6 structure is characterized in that wherein said those P type electrodes and those N type electrodes are for contour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510114523XA CN100470749C (en) | 2005-10-24 | 2005-10-24 | Crystal wafer testing method and structure of LED |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510114523XA CN100470749C (en) | 2005-10-24 | 2005-10-24 | Crystal wafer testing method and structure of LED |
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| Publication Number | Publication Date |
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| CN1956159A true CN1956159A (en) | 2007-05-02 |
| CN100470749C CN100470749C (en) | 2009-03-18 |
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| CNB200510114523XA Active CN100470749C (en) | 2005-10-24 | 2005-10-24 | Crystal wafer testing method and structure of LED |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102136440B (en) * | 2010-01-26 | 2012-10-10 | 旺矽科技股份有限公司 | Accurate pointing and sorting unit |
| CN102881801A (en) * | 2011-07-12 | 2013-01-16 | 宏齐科技股份有限公司 | Back switching type light emitting diode packaging structure and manufacturing method thereof |
| CN101592702B (en) * | 2008-05-30 | 2013-06-26 | 晶元光电股份有限公司 | Alarm system and method of light emitting diodes |
| CN105590867A (en) * | 2014-10-24 | 2016-05-18 | 无锡超钰微电子有限公司 | Manufacturing method of wafer-level chip scale packaging structure |
| CN112710944A (en) * | 2019-10-25 | 2021-04-27 | 台湾爱司帝科技股份有限公司 | Light emitting diode wafer and light emitting diode wafer detection device and method |
| CN112967945A (en) * | 2020-04-16 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Micro light-emitting diode testing device, manufacturing method, system and testing method |
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Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2803157B2 (en) * | 1989-05-16 | 1998-09-24 | 日本電気株式会社 | Light emitting diode manufacturing method |
| CN1477690A (en) * | 2002-08-21 | 2004-02-25 | 南茂科技股份有限公司 | Test method of complex semiconductor packaged structure |
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- 2005-10-24 CN CNB200510114523XA patent/CN100470749C/en active Active
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| CN101592702B (en) * | 2008-05-30 | 2013-06-26 | 晶元光电股份有限公司 | Alarm system and method of light emitting diodes |
| CN102136440B (en) * | 2010-01-26 | 2012-10-10 | 旺矽科技股份有限公司 | Accurate pointing and sorting unit |
| CN102881801A (en) * | 2011-07-12 | 2013-01-16 | 宏齐科技股份有限公司 | Back switching type light emitting diode packaging structure and manufacturing method thereof |
| CN102881801B (en) * | 2011-07-12 | 2015-10-21 | 宏齐科技股份有限公司 | Back of the body cut package structure for LED and preparation method thereof |
| CN105590867A (en) * | 2014-10-24 | 2016-05-18 | 无锡超钰微电子有限公司 | Manufacturing method of wafer-level chip scale packaging structure |
| CN112710944A (en) * | 2019-10-25 | 2021-04-27 | 台湾爱司帝科技股份有限公司 | Light emitting diode wafer and light emitting diode wafer detection device and method |
| CN112710944B (en) * | 2019-10-25 | 2024-03-22 | 台湾爱司帝科技股份有限公司 | Light emitting diode wafer and light emitting diode wafer detection device and method |
| CN112967945A (en) * | 2020-04-16 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Micro light-emitting diode testing device, manufacturing method, system and testing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100470749C (en) | 2009-03-18 |
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