CN109686828A - A kind of Micro LED and its array substrate, detection device and detection method - Google Patents
A kind of Micro LED and its array substrate, detection device and detection method Download PDFInfo
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- CN109686828A CN109686828A CN201910015236.5A CN201910015236A CN109686828A CN 109686828 A CN109686828 A CN 109686828A CN 201910015236 A CN201910015236 A CN 201910015236A CN 109686828 A CN109686828 A CN 109686828A
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Abstract
The present invention provides a kind of Micro LED and its array substrate, detection device and detection method, and wherein Micro LED is located on underlay substrate, comprising: n type semiconductor layer；P type semiconductor layer；Luminescent layer between n type semiconductor layer and p type semiconductor layer；The N-type electrode contacted with the n type semiconductor layer；The P-type electrode contacted with the p type semiconductor layer；The orthographic projection of the P-type electrode and the N-type electrode on the underlay substrate is not overlapped, and the difference in height of the P-type electrode and the N-type electrode is more than or equal to 3 microns.It, can be in the case where not encapsulating, when directly using detection device to carrying out brightness detection after two electrodes power-up of Micro LED since the difference in height between P-type electrode and N-type electrode is larger.It if it is detected that the brightness for carrying out certain Micro LED is unsatisfactory for requiring, can be replaced, satisfactory Micro LED is packaged use, detect and replace the easy to operate of Micro LED, cost is relatively low.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of Micro LED and its array substrates, detection device and inspection
Survey method.
Background technique
Micro- light-emitting diode (Micro LED) is self-illuminating structure, is not necessarily to backlight, and volume is reduced to nanoscale.Micro
Light-emitting diode display is micromation LED array, that is, after LED structure designed carrying out filming, microminiaturization and array, flood tide
Ground is transferred on circuit substrate, is recycled physical deposition techniques to generate protective layer, can be formed the LED of nanoscale spacing.
Whether Micro LED needs test brightness normal before the use.It could be powered on after existing Micro LED encapsulation
It tests, power-on test process is specifically included that by Micro LED after tired crystalline substance, element manufacturing are good, will by flood tide transfer techniques
Micro LED is transferred on circuit substrate, then makes the control devices such as the connection metal wire of power-up, to realize power-on test.
But since power-on test process has made connection metal wire and protective layer, it is not easy to replace the Micro of brightness exception
LED。
Therefore, a kind of Micro LED for not needing encapsulation and being powered up detection is needed.
Summary of the invention
The embodiment of the present invention provides a kind of Micro LED and its array base for not needing encapsulation and being powered up detection
Plate and matched detection device and detection method.
In order to achieve the above object, concrete scheme provided in an embodiment of the present invention is as follows:
In a first aspect, being located on underlay substrate, the Micro LED the embodiment of the invention provides a kind of Micro LED
Include:
N type semiconductor layer；
P type semiconductor layer；
Luminescent layer between n type semiconductor layer and p type semiconductor layer；
The N-type electrode contacted with the n type semiconductor layer；
The P-type electrode contacted with the p type semiconductor layer；
The orthographic projection of the P-type electrode and the N-type electrode on the underlay substrate is not overlapped, and the P-type electrode
It is more than or equal to 3 microns with the difference in height of the N-type electrode.
Optionally, the Micro LED is located on the epitaxial layer on the underlay substrate, and the epitaxial layer includes mutually solely
Vertical first area and second area, there are thickness differences for first area and second area；
The n type semiconductor layer is located on the entire epitaxial layer, and the N-type electrode is located on the n type semiconductor layer
And the orthographic projection of the N-type electrode on said epitaxial layer there falls into the first area；
The luminescent layer is located on the n type semiconductor layer and the orthographic projection of the luminescent layer on said epitaxial layer there is fallen into
The second area, the p type semiconductor layer are located on the luminescent layer, and the P-type electrode is located at the p type semiconductor layer
On.
Optionally, the n type semiconductor layer includes first part and second part, the first part and second described
Point there are thickness differences；
The N-type semiconductor is located on entire underlay substrate, and the N-type electrode is located at described the of the N-type semiconductor
In a part；
The luminescent layer is located on the second part of the n type semiconductor layer, and the p type semiconductor layer is located at described shine
On layer, the P-type electrode is located on the P-type semiconductor and orthographic projection of the P-type electrode on the n type semiconductor layer is fallen
Enter the second part.
Optionally, the underlay substrate includes multiple Micro LED forming regions, and each Micro LED forming region is equal
Including mutually independent third region and the fourth region, there are thickness differences with the fourth region in the third region；
The N-type electrode is located on the n type semiconductor layer and the orthographic projection of the N-type electrode over the substrate is fallen into
The third region；
The luminescent layer is located on the n type semiconductor layer and orthographic projection of the luminescent layer on the underlay substrate is fallen
Enter the fourth region, the P-type semiconductor is located on the luminescent layer, and the P-type electrode is located at the p type semiconductor layer
On.
Optionally, the Micro LED further includes transparent electrode；
The transparent electrode is between the p type semiconductor layer and the P-type electrode.
Second aspect, the embodiment of the invention also provides a kind of Micro LED array substrates, including array arrangement is in substrate
Multiple Micro LED as described in any one of first aspect on substrate.
The third aspect, the embodiment of the invention also provides a kind of detection devices, for in such as claim first aspect
Described in any item Micro LED carry out brightness detection, and the detection device includes:
Positive and negative power-up probe and photodetector, the positive and negative power-up probe length difference are more than or equal to the p-type electricity
The difference in height of pole and the N-type electrode.
Optionally, the positive and negative power-up probe length difference is greater than the difference in height of the P-type electrode and the N-type electrode.
Optionally, the positive and negative power-up probe is flexible structure.
The third aspect, the embodiment of the invention also provides a kind of detection methods, will be as described in any one of third aspect
Detection device is crimped on the Micro LED as described in any one of first aspect, so that the anode power-up of the detection device
Probe is contacted with P-type electrode, and the cathode power-up probe of the detection device is contacted with N-type electrode.
In the present embodiment, the Micro LED provided includes P-type electrode, N-type electrode and other functional layers, P-type electrode and N
Difference in height between type electrode is more than or equal to 3 microns.Since the difference in height between P-type electrode and N-type electrode is larger,
It can be in the case where not encapsulating, directly using detection device to progress brightness detection after two electrodes power-up of Micro LED
When.If it is detected that the brightness for carrying out certain Micro LED is unsatisfactory for requiring, can be replaced, by satisfactory Micro
LED is packaged use, detects and replace the easy to operate of Micro LED, cost is relatively low.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, needed in being described below to the embodiment of the present invention
Attached drawing to be used is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention,
For those of ordinary skill in the art, without any creative labor, it can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is a kind of structural schematic diagram of Micro LED provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of another kind Micro LED provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another kind Micro LED provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another kind Micro LED provided in an embodiment of the present invention；
Fig. 5 is the structural schematic diagram of another kind Micro LED provided in an embodiment of the present invention；
Fig. 6 is a kind of structural schematic diagram of detection device provided in an embodiment of the present invention；
Fig. 7 is that detection device provided in an embodiment of the present invention is crimped onto the structural schematic diagram on Micro LED.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
Referring to Fig. 1, Fig. 1 is a kind of structural schematic diagram of Micro LED provided in an embodiment of the present invention.As shown in Figure 1, institute
The Micro LED of offer is located on underlay substrate 100, and the Micro LED includes:
N type semiconductor layer 110；
P type semiconductor layer 120；
Luminescent layer 130 between n type semiconductor layer 110 and p type semiconductor layer 120；
The N-type electrode 150 contacted with the n type semiconductor layer 110；
The P-type electrode 140 contacted with the p type semiconductor layer 120；
The orthographic projection of the N-type electrode 150 and the P-type electrode 140 on the underlay substrate 100 is not overlapped, and institute
The difference in height (i.e. Δ H shown in Fig. 1) for stating N-type electrode 150 and the P-type electrode 140 is more than or equal to 3 microns.
In the present embodiment, Micro LED is located on underlay substrate 100.Micro LED specifically includes that p type semiconductor layer
120, P-type electrode 140, n type semiconductor layer 110, N-type electrode 150 and luminescent layer 130, wherein luminescent layer 130, which is located at p-type, partly leads
Between body layer 120 and n type semiconductor layer 110, P-type electrode 140 is located on P-type semiconductor, and N-type electrode 150 is located at N-type semiconductor
On.In addition, the orthographic projection of N-type electrode 150 and P-type electrode 140 on underlay substrate 100 is not overlapped, and P-type electrode 140 and N-type
There are difference in height between electrode 150, which is more than or equal to 3 microns.In general, P-type electrode 140 is higher than N-type electrode 150
At least 3 microns.Difference in height between two electrodes is more than or equal to 3 microns, and the external detection device of ability is to the two electrodes
Power-on test.Difference in height is smaller, can not accurately accommodate the elements such as the probe of detection device, also just cannot achieve detection.
Due between p-type and N-type electrode 150 there are difference in height, Micro LED can directly external subsidiary power-up
The detection device of probe, P-type electrode 140 and N-type electrode 150 to the Micro LED are powered on, to detect the Micro LED's
Brightness, could power-on test after encapsulation without first Micro LED is transferred in array substrate.
Above-mentioned Micro LED provided in this embodiment, the difference in height being arranged between P-type electrode and N-type electrode be greater than or
Equal to 3 microns.It, can be in the case where not encapsulating, directly since the difference in height between P-type electrode and N-type electrode is larger
When using detection device to brightness detection is carried out after two electrodes power-up of Micro LED.If it is detected that carrying out certain Micro LED
Brightness be unsatisfactory for requiring, can be replaced, satisfactory Micro LED is packaged use, detection and replacement
Micro LED's is easy to operate, and cost is relatively low.
In view of P-type electrode 140 and N-type electrode 150 have multiple relevant functional layers, thus realize P-type electrode 140 with
The mode of the difference in height of N-type electrode 150 can there are many, illustrated below in conjunction with three specific embodiments.
In a specific embodiment, as shown in Fig. 2, the Micro LED be located at it is outer on the underlay substrate 100
Prolong on layer 160, the epitaxial layer 160 includes mutually independent first area 161 and second area 162, first area 161 and the
There are thickness differences in two regions 162；
The n type semiconductor layer 110 is located on the entire epitaxial layer 160, and the N-type electrode 150 is located at the N-type half
In conductor layer 110 and orthographic projection of the N-type electrode 150 on the epitaxial layer 160 falls into the first area 161；
The luminescent layer 130 is located on the n type semiconductor layer 110 and the luminescent layer 130 is on the epitaxial layer 160
Orthographic projection fall into the second area 162, the p type semiconductor layer 120 is located on the luminescent layer 130, the P-type electrode
140 are located on the p type semiconductor layer 120.
In present embodiment, underlay substrate 100 is equipped with epitaxial layer 160, and Micro LED is located on epitaxial layer 160.Extension
Layer 160 includes first area 161 and second area 162, and first area 161 and second area 162 are not overlapped, and first area
161 and second area 162 there are thickness difference, which can make the p-type being set on the epitaxial layer 160 indirectly
The difference in height of electrode 140 and the N-type electrode 150 is more than or equal to 3 microns.In addition, the first area 161 of epitaxial layer 160
With corresponding to second area 162, the thickness of the corresponding region of underlay substrate 100 and n type semiconductor layer 110 can be identical,
Can be different, as long as can guarantee that the difference in height of P-type electrode 140 and N-type electrode 150 is more than or equal to 3 microns, do not limit
It is fixed.
Specifically, n type semiconductor layer 110 is located on the entire epitaxial layer 160, N-type electrode 150 and luminescent layer 130 are equal
On N-type semiconductor, N-type electrode 150 is not contacted with luminescent layer 130, and orthographic projection of the N-type electrode 150 on epitaxial layer 160 is fallen
Enter first area 161, orthographic projection of the luminescent layer 130 on epitaxial layer 160 falls into second area 162.P-type semiconductor, which is located at, to shine
On layer 130, P-type electrode 140 is then located on p type semiconductor layer 120.
In present embodiment, by first area 161 and N-type electrode that the corresponding epitaxial layer 160 of P-type electrode 140 is arranged
There are thickness differences for the second area 162 of 150 corresponding epitaxial layers 160, to realize the height of P-type electrode 140 Yu N-type electrode 150
Difference is more than or equal to 3 microns.
In another embodiment specific implementation mode, such as Fig. 3, the N-type semiconductor is located on entire underlay substrate 100, the N
Type semiconductor layer 110 includes first part 111 and second part 112, and the first part 111 and the second part 112 are deposited
In thickness difference；
The N-type electrode 150 is located in the first part 111 of the n type semiconductor layer 110；
The luminescent layer 130 is located on the second part 112 of the n type semiconductor layer 110, the p type semiconductor layer 120
On the luminescent layer 130, the P-type electrode 140 is located on the P-type semiconductor and the P-type electrode 140 is in the N
Orthographic projection in type semiconductor layer 110 falls into the second part 112.
In present embodiment, as shown in figure 3, the n type semiconductor layer 110 in Micro LED is located at entire underlay substrate 100
On, or as shown in figure 4, n type semiconductor layer 110 is located on the epitaxial layer 160 on entire underlay substrate 100.N type semiconductor layer
110 include first part 111 and second part 112, and there are thickness differences with second part 112 for the first part 111.By N-type electricity
Pole 150 is set in the first part 111 of n type semiconductor layer 110, and luminescent layer 130 is set to n type semiconductor layer 110 second
On part 112, p type semiconductor layer 120 and P-type electrode 140 are then set gradually on luminescent layer 130.In this way, N-type electrode 150
Orthographic projection on n type semiconductor layer 110 falls into first part 111, and P-type electrode 140 is on the n type semiconductor layer 110
Orthographic projection falls into the second part 112.
In present embodiment, first part 111 and the N-type electrode of the corresponding n type semiconductor layer 110 of P-type electrode 140 are set
There are thickness differences for the second part 112 of 150 corresponding n type semiconductor layers 110, to realize P-type electrode 140 and N-type electrode 150
Difference in height is more than or equal to 3 microns.
In another embodiment specific implementation mode, as shown in figure 5, the underlay substrate 100 includes that multiple Micro LED are formed
Region, each Micro LED forming region include mutually independent third region 101 and the fourth region 102, the third region
101 and the fourth region 102 there are thickness differences；
The n type semiconductor layer 110 is located on the entire underlay substrate 100, and the N-type electrode 150 is located at the N-type
On semiconductor layer 110 and orthographic projection of the N-type electrode 150 on the underlay substrate 100 falls into the third region 101；
The luminescent layer 130 is located on the n type semiconductor layer 110 and the luminescent layer 130 is in the underlay substrate 100
On orthographic projection fall into the fourth region 102, the P-type semiconductor is located on the luminescent layer 130, the P-type electrode 140
On the p type semiconductor layer 120.
In present embodiment, underlay substrate 100 includes multiple Micro LED forming regions, is formed in each Micro LED
A Micro LED is formed on region.Specifically, each Micro LED forming region includes third region 101 and the 4th
Region 102, and there are thickness differences to be more than or equal to 3 microns for the third region 101 and the fourth region 102.
As shown in figure 5, n type semiconductor layer 110 can be directly arranged in corresponding Micro LED forming region, or
As shown in Figure 1, n type semiconductor layer 110 can be directly arranged in corresponding Micro LED forming region, epitaxial layer 160 on.N
Type electrode 150 is set on n type semiconductor layer 110, and successively by luminescent layer 130, p type semiconductor layer 120 and P-type electrode 140
It is set to n type semiconductor layer 110, and N-type electrode 150 is not contacted with luminescent layer 130.N-type electrode 150 is on underlay substrate 100
Orthographic projection fall into third region 101, the orthographic projection of luminescent layer 130 and P-type electrode 140 on underlay substrate 100 falls into
Four regions 102.
In present embodiment, third region 101 and the N-type electrode 150 of the corresponding underlay substrate 100 of P-type electrode 140 are set
There are thickness differences to be more than or equal to 3 microns for the fourth region 102 of corresponding underlay substrate 100, so that P-type electrode 140 and N-type
The difference in height of electrode 150 is more than or equal to 3 microns.
In conjunction with above three specific embodiment it can be concluded that, by setting P-type electrode 140 and N-type electrode 150 it is right respectively
It answers, there are thickness for the relevant range of one layer in underlay substrate 100, epitaxial layer 160 and n type semiconductor layer 110 or multilayer
Difference, the difference in height that P-type electrode 140 and N-type electrode 150 can be realized are more than or equal to 3 microns.Substrate base can preferably be passed through
Realize that the difference in height of P-type electrode 140 and N-type electrode 150 is greater than or waits there are the mode of thickness difference in two regions of plate 100
In 3 microns of purpose, cost of manufacture, simplification of flowsheet are further decreased on the basis of facilitating detection Micro LED luminance.
On the basis of the above embodiment, as shown in Figures 1 to 5, the Micro LED can also include transparent electrode
170；
The transparent electrode 170 is between the p type semiconductor layer 120 and the P-type electrode 140.
In present embodiment, transparent electrode 170 is added between p type semiconductor layer 120 and P-type electrode 140, reduces p-type
The light of luminescent layer 130 is blocked in electrode 140 and the area P, improves the brightness of Micro LED.
The embodiment of the invention also provides a kind of Micro LED array substrates, including array arrangement on underlay substrate
Multiple Micro LED as described in any one of first aspect.
In the present embodiment, Micro LED array substrate includes the Micro LED, used Micro of multiple array arrangements
LED includes P-type electrode, N-type electrode and other functional layers, and the difference in height between P-type electrode and N-type electrode is more than or equal to 3
Micron.Since the difference in height between P-type electrode and N-type electrode is larger, inspection can be directly utilized in the case where not encapsulating
When measurement equipment is to brightness detection is carried out after two electrodes power-up of Micro LED.If it is detected that carrying out the brightness of certain Micro LED
It is unsatisfactory for requiring, can be replaced, satisfactory Micro LED is arranged on underlay substrate.Micro LED array
The detection and replacement operation of the Micro LED of substrate is simple, and cost is relatively low.Micro LED array provided in an embodiment of the present invention
The specific implementation process of substrate may refer to the specific implementation for the Micro LED that above-mentioned Fig. 1 is provided to embodiment shown in fig. 5
Process, this is no longer going to repeat them.
Referring to Fig. 6, Fig. 6 is a kind of structural schematic diagram of detection device provided in an embodiment of the present invention, which uses
In to Micro LED progress brightness detection as shown in Figures 1 to 5.As shown in fig. 6, the detection device 200 includes:
Positive and negative power-up probe and photodetector 230, the positive and negative power-up probe length difference are more than or equal to the p-type
The difference in height of electrode 140 and the N-type electrode 150.
As shown in fig. 7, detection device 200 is used to detect the brightness of Micro LED.It will test the anode power-up of equipment 200
Probe 210 is crimped on P-type electrode 140, and the cathode power-up probe 220 that will test equipment 200 is crimped on N-type electrode 150.Due to just
Pole is powered on probe 210 and cathode is powered on height of the length more than or equal to P-type electrode 140 and N-type electrode 150 of probe 220
Difference crimps positive and negative power-up probe with P-type electrode 140 and N-type electrode 150, to carry out brightness detection.
Optionally, the positive and negative power-up probe length difference is greater than the height of the P-type electrode 140 and the N-type electrode 150
Difference.The positive and negative power-up probe length difference of detection device 200 is greater than the difference in height of P-type electrode 140 and N-type electrode 150, in this way, i.e.
When Micro LED P-type electrode 140 and N-type electrode 150 when processing there are error or detection platform are uneven, also can guarantee
The normal detection of detection device 200 operates.
In addition, the positive and negative power-up probe all can be flexible structure.
The positive and negative power-up probe that will test equipment 200 is selected as flexible structure, and the material of flexible structure is soft, can directly by
Gravity is sagging, if the difference in height of two electrode of the length greater than Micro LED of positive and negative power-up probe, can directly take
It connects on two electrodes.Specifically, positive and negative power-up probe is directly overlapped on corresponding electrode, be can be realized and is electrically connected when detection
It connects, detects easy to operate.Further, since positive and negative power-up probe is flexible structure, the electrode of corresponding different height difference is powered on detection
The power-up probe of scheme, detection device can snap on electrode, and it is complete also can only to detect length to avoid hard material
The case where complete matched electrode, improve the adaptability of detection device.
Detection device provided in an embodiment of the present invention, for detecting Micro shown in any one of above-mentioned Fig. 1 to Fig. 5
The brightness of LED, brightness detection can be carried out by not needing to encapsulate wiring in advance, simplify the detection operation of Micro LED.The present invention
The specific implementation process for the detection device that embodiment provides, may refer to the specific reality of Micro LED provided by the above embodiment
Process is applied, this is no longer going to repeat them.
In addition, the embodiment of the invention provides a kind of detection method, by detection device as shown in Figure 6 above be crimped on as
On Micro LED shown in any one of above-mentioned Fig. 1 to Fig. 5, so that the anode power-up probe and P-type electrode of the detection device
The cathode power-up probe of contact, the detection device is contacted with N-type electrode.
Detection device provided in an embodiment of the present invention, brightness detection can be carried out by not needing to encapsulate wiring in advance, be simplified
The detection of Micro LED operates.The specific implementation process of detection device provided in an embodiment of the present invention may refer to above-mentioned implementation
The specific implementation process of Micro LED and detection device that example provides, this is no longer going to repeat them.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (10)
1. a kind of Micro LED, it is located on underlay substrate, which is characterized in that the Micro LED includes:
N type semiconductor layer；
P type semiconductor layer；
Luminescent layer between n type semiconductor layer and p type semiconductor layer；
The N-type electrode contacted with the n type semiconductor layer；
The P-type electrode contacted with the p type semiconductor layer；
The orthographic projection of the P-type electrode and the N-type electrode on the underlay substrate is not overlapped, and the P-type electrode and institute
The difference in height for stating N-type electrode is more than or equal to 3 microns.
2. Micro LED according to claim 1, which is characterized in that the Micro LED is located on the underlay substrate
Epitaxial layer on, the epitaxial layer includes mutually independent first area and second area, and first area and second area exist
Thickness difference；
The n type semiconductor layer is located on the entire epitaxial layer, and the N-type electrode is located on the n type semiconductor layer and institute
It states the orthographic projection of N-type electrode on said epitaxial layer there and falls into the first area；
The luminescent layer is located on the n type semiconductor layer and the orthographic projection of the luminescent layer on said epitaxial layer there fall into it is described
Second area, the p type semiconductor layer are located on the luminescent layer, and the P-type electrode is located on the p type semiconductor layer.
3. Micro LED according to claim 1, which is characterized in that the n type semiconductor layer includes first part and
There are thickness differences for two parts, the first part and the second part；
The N-type electrode is located in the first part of the n type semiconductor layer；
The luminescent layer is located on the second part of the n type semiconductor layer, and the p type semiconductor layer is located at the luminescent layer
On, the P-type electrode is located on the P-type semiconductor and orthographic projection of the P-type electrode on the n type semiconductor layer is fallen into
The second part.
4. Micro LED according to claim 1, which is characterized in that the underlay substrate includes multiple Micro LED shapes
At region, each Micro LED forming region includes mutually independent third region and the fourth region, the third region with
There are thickness differences for the fourth region；
The N-type electrode is located on the n type semiconductor layer and the orthographic projection of the N-type electrode over the substrate fall into it is described
Third region；
The luminescent layer is located on the n type semiconductor layer and orthographic projection of the luminescent layer on the underlay substrate falls into institute
The fourth region is stated, the P-type semiconductor is located on the luminescent layer, and the P-type electrode is located on the p type semiconductor layer.
5. Micro LED according to claim 1, which is characterized in that the Micro LED further includes transparent electrode；
The transparent electrode is between the p type semiconductor layer and the P-type electrode.
6. a kind of Micro LED array substrate, which is characterized in that multiple as right is wanted on underlay substrate including array arrangement
Micro LED described in asking any one of 1 to 5.
7. a kind of detection device, which is characterized in that for being carried out to Micro LED according to any one of claims 1 to 5
Brightness detection, the detection device include:
Positive and negative power-up probe and photodetector, the positive and negative power-up probe length difference be more than or equal to the P-type electrode with
The difference in height of the N-type electrode.
8. detection device according to claim 7, which is characterized in that the positive and negative power-up probe length difference is greater than the P
The difference in height of type electrode and the N-type electrode.
9. according to detection device described in claim 7 or 8, which is characterized in that the positive and negative power-up probe is flexible knot
Structure.
10. a kind of detection method, which is characterized in that being crimped on detection device described in any one of claim 7 to 9 such as power
Benefit require any one of 1 to 5 described on Micro LED so that the anode power-up probe of the detection device connects with P-type electrode
The cathode power-up probe of touching, the detection device is contacted with N-type electrode.
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