K78644 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種發光二極體之測試方法，特別 係有關於一種發光二極體之晶圓級測試方法。 【先前技術】 習知發光二極體（Light Emitting Diode, LED)係由 P-N接合半導體構成，當電流從p側流向n側隨即發 光’而能高效率將電能轉換成光源，習知發光二極體 製造流程為先製備一 LED半導體晶圓，將晶圓切割為 LED晶片之後，重新排列在一帶狀輸送帶上，以兩端 探針接觸單一 LED晶片之P型電極與n型電極，測試 其疋否發光之後，再移動探針並測試下一顆led晶 片’故其係以逐一點測方式測試每一 LED晶片，測試 時間冗長，接下來將每一 LED晶片個別放置在一基板 (或導線架）上，打線電性連接該LED晶片與基板（或導 線架），再以透明樹脂或玻璃蓋密封該LED晶片，最後 再測試一次已封裝後之LED晶片，製程與測試中需要 相當多種不同之搬運型態，導致製造與測試機台過 多，且效率不彰。 【發明内容】 本發明之主要目的係在於提供一種發光二極體之 晶圓級測試方法，一 led半導體晶圓係貼附於一膠帶 再切割成複數個L E D晶片，以一具有光偵測器之探測 卡歐姆接觸（ohmic contact)該些LED晶片之P塑電極 Π78644 與N型電極，該些光偵測器係偵測該些LED晶片發出 之光源，以達到大量與快速地晶圓級測試複數個發光 二極體。 本發明之主要目的係在於提供一種發光二極體之 晶圓級測試方法，在一 LED半導體晶圓正面上之P型 電極與N型電極係包含有凸塊，而提供複數個覆晶型 態之LED晶片（即該 LED半導體晶圓之背面為發光 面），在該LED半導體晶圓之正面上以一具有光偵測器 之探測卡進行光源測試，以達到大量與快速地測試 LED覆晶晶片。 依本發明之發光二極體之晶圓級測試方法，首先， 提供有一 LED半導體晶圓，該LED半導體晶圓係具有 一正面及一背面，該正面係設有複數個P型電極及複 數個N型電極，接下來，將一膠帶貼附於該LED半導 體晶圓之背面，再切割該LED半導體晶圓而形成複數 個在該膠帶上之LED晶片，之後，以一探測卡測試該 些LED晶片，該探測卡係包含有複數個探觸結構，每 一探觸結構係具有複數個探觸端及一光偵測器，該些 探觸端係歐姆接觸該些LED晶片之該些P型電極與該 些N型電極，較佳地，係完全接觸該些LED晶片之該 些P型電極與該些N型電極，而該些光偵測器係設於 對應探觸結構之探觸端之間，當一電壓由該些探觸結 構施加予該些 LED晶片，由該些光偵測器偵測該些 LED晶片發生之光源。該LED半導體晶圓係可以是裸 Γ278644 晶圓或是包含有封裝樹脂層之已封裝半導體晶圓。 【實施方式】 參閱所附圖式’本發明將列舉以下之實施例說明。 依據本發明之發光二極體之晶圓級測試方法，請參閱第i 圖，首先，提供有一 LED半導體晶圓1〇(LED係為Ught Emitting Diode之簡稱，或稱發光二極體），該led半導體 晶圓1〇係、具有一正® 11及一背® 12,該LED半導體晶圓 1〇係包含有-基板層以及由m、v族半導體或是由不純物 構成之P型層與N型細未繪出），習知的液㈣長或汽相 成長方法均能製得該P型層與型層，肖㈣半導體晶 圓之正面11係設有複數個p型電極13及複數個N型電 和4 π別電性連接該p型層與該n型層，在本實施例中， :、ED半導體日日圓1〇係一種經過晶圓級封裝製程之晶圓， 一透明之封裝樹脂層1 6俜 係形成於該LED半導體晶圓1〇之 面"，較佳地，該透明之封裝樹脂層16可包 料，以改變該LED半導 材 源顏多日2 導體日日圓10(LED晶片15)所發出之光 原須色，且另一封裝樹 圓w之背面…而該此；型=可形成於該LED半導體晶 以是凸塊或金屬塾，在：眘電極13與該些N型電極14可 些n型電極14料凸^=中，該些p型電極13與該 過該封裝樹脂層16而電性3裝樹脂層16之凸塊，其係透 導接塾17,該些？型雷搞導接至該LED半導體晶圓1〇之 為較佳。 11 13與該些N型電極14又以等高 接下來’请參閱第2同 圖’將一膠帶20貼附於該LED半 1278644 導體晶圓ίο之背面12,該膠帶20係具有黏著性，如1；乂膠 帶。再請參閱第3圖，以切割刀具3G切割該㈣半導體晶 圓1〇而形成複數個在該膠帶20上之LED晶片15，使得Z 一 LED晶片15包含有至少一 p型電極13及至少一 N型電 極14，並且使得相鄰之LED晶片15之p型層與n型層為 電性獨立。 接下來，請參閱第4圖，以一探測卡4〇測試該些 晶片1 5，該探測卡40係包含有複數個探觸結構4丨，每—探 觸結構41係具有複數個探觸端42及一光偵測器43，該些探 觸端42係為探針或測試凸點，每一光偵測器43係具有—光 纖傳遞管（glass fabric tube)，在本實施例中，該些探觸結構 41係το全對應該些LED晶片1 5，在測試過程，該些探觸端 42係歐姆接觸（〇hmic contact)該些LED晶片15之該些p型 電極13與該些N型電極14，較佳地，該些探觸端42係完 全接觸或是分區接觸該些LED晶片15之該些p型電極13 與該些N型電極14,而該些光偵測器43係設於對應探觸結 構41之探觸端42之間，當一電壓由該些探觸結構41施加 予該些LED晶片15，該些LED晶片15將會發出光源，由 該些光偵測器43偵測該些LED晶片15發生光源之亮度與 色相’以判別產品良劣。此外，除了已完成晶圓級封裝之晶 圓之外’本發明之發光二極體之晶圓級測試方法係能運用在 裸晶圓之LED半導體晶圓，打線型態或覆晶型態之LED晶 片並不需要如習知技術逐一點測，而能以全晶圓歐姆接觸或 是區塊歐姆接觸測試一 LED半導體晶圓，大幅縮短測試時 ,1278644 間，而達到LED晶片痞LFD曰μ。 試。 戈“尺寸封裝構造之晶圓極測 本發明之保護範时視後附之中請專利 準，4壬ih左Ο» s t h 斤界疋者為 旱任何熟知此項技藝者，在不脫 所作之杯打辦儿& & 知73之精神和範圍内 所作之任㈣化與修改，均屬於本發明之保護 【圖式簡單說明】 第1圖·依據本發明之發光二極體之曰 探股之日日固級測試方 法，所提供之LED半導體晶圓之 筮〇门 回不恩圖； 圖·依據本發明之發弁—搞辦 1 <知尤一極體之晶圓級測試方 法，在貼附一膠帶之後該LED半導體曰曰圓 截面示意圖； 第 3圖：依 據‘ 本發 明 之 發光 法， 在 晶圓 切 割 之後 面不 意 园 · 圖， 及 第 4圖：依. 據^ 本發 明 之 發光 法， 在 探測 卡 測 試過 之截 面 示意 圖 〇 t 主要元件符 號 說明 ] 10 LED半導體晶圓 11 正面 12 背 面 14 N型電極 15 LED晶片 17 導接墊 20 膠帶 30 切 割 刀具 40 探測卡 41 探觸 結構 13 P型電極 16封裝樹脂層 42接觸端 Γ278644 43光偵測器K78644 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for testing a light-emitting diode, and more particularly to a wafer level test method for a light-emitting diode. [Prior Art] A conventional Light Emitting Diode (LED) is composed of a PN junction semiconductor, and when a current flows from the p side to the n side, it emits light, and the electric energy can be converted into a light source with high efficiency. The manufacturing process is to first prepare an LED semiconductor wafer, and after cutting the wafer into LED wafers, rearrange them on a strip conveyor belt, and touch the P-type electrode and the n-type electrode of the single LED chip with the probes at both ends, and test After the light is emitted, the probe is moved and the next LED chip is tested. Therefore, each LED chip is tested in a one-by-one manner. The test time is tedious, and then each LED chip is individually placed on a substrate (or On the lead frame, the LED chip and the substrate (or lead frame) are electrically connected, and the LED chip is sealed with a transparent resin or a glass cover. Finally, the packaged LED chip is tested once, and a considerable number of processes and tests are required. Different handling types result in too many manufacturing and testing machines and are inefficient. SUMMARY OF THE INVENTION The main object of the present invention is to provide a wafer level test method for a light emitting diode. A LED semiconductor wafer is attached to a tape and then cut into a plurality of LED chips to have a photodetector. The ohmic contact of the LED chip is the P-electrode Π78644 and the N-type electrode of the LED chip, and the photodetectors detect the light source emitted by the LED chip to achieve a large and fast wafer level test. A plurality of light emitting diodes. The main object of the present invention is to provide a wafer level testing method for a light emitting diode. The P-type electrode and the N-type electrode on the front surface of an LED semiconductor wafer include bumps to provide a plurality of flip-chip patterns. The LED chip (ie, the back surface of the LED semiconductor wafer is a light-emitting surface), and a light source test is performed on the front surface of the LED semiconductor wafer with a probe card having a photodetector to achieve large-scale and rapid test of LED flip-chip Wafer. According to the wafer level test method of the light-emitting diode of the present invention, first, an LED semiconductor wafer having a front surface and a back surface, the front surface is provided with a plurality of P-type electrodes and a plurality of N-type electrode, next, a tape is attached to the back surface of the LED semiconductor wafer, and then the LED semiconductor wafer is cut to form a plurality of LED chips on the tape, and then the LEDs are tested by a probe card. The probe card includes a plurality of probe structures, each of the probe structures having a plurality of probe terminals and a photodetector, the probe terminals being ohmically contacting the P-types of the LED chips The electrodes and the N-type electrodes are preferably in contact with the P-type electrodes and the N-type electrodes of the LED chips, and the photodetectors are disposed at the probe end of the corresponding probe structure. When a voltage is applied to the LED chips by the probe structures, the light detectors detect the light sources generated by the LED chips. The LED semiconductor wafer can be a bare 278644 wafer or a packaged semiconductor wafer containing an encapsulating resin layer. [Embodiment] The present invention will be described with reference to the accompanying drawings. According to the wafer level test method of the light-emitting diode of the present invention, please refer to the first diagram. First, an LED semiconductor wafer 1 (LED is referred to as a Ught Emitting Diode, or a light-emitting diode) is provided. The LED semiconductor wafer 1 has a positive layer 11 and a back layer 12, and the LED semiconductor wafer 1 comprises a substrate layer and a p-type layer and a layer of m or a group of semiconductors or impurities. The type of thin (not shown), the conventional liquid (four) long or vapor phase growth method can produce the P-type layer and the type layer, and the front side 11 of the semiconductor wafer is provided with a plurality of p-type electrodes 13 and a plurality of N-type electricity and 4 π are electrically connected to the p-type layer and the n-type layer. In this embodiment, the ED semiconductor Japanese yen 1 is a wafer through a wafer level packaging process, and a transparent package. The resin layer 16 is formed on the surface of the LED semiconductor wafer. Preferably, the transparent encapsulating resin layer 16 can be packaged to change the LED semi-conductor source. 10 (LED wafer 15) emits the original light color, and the other encapsulates the back of the tree circle w... and this type; can be formed in the L The ED semiconductor crystal is a bump or a metal iridium, and the n-type electrode 14 and the n-type electrode 14 may be n-type electrodes 14 and the p-type electrode 13 and the encapsulating resin layer 16 The bumps of the electrical 3 resin layer 16 are through the conductive joints 17, which? It is preferred that the type of lightning is connected to the LED semiconductor wafer. 11 13 and the N-type electrodes 14 are again in the same height and then 'see the same figure 2' to attach a tape 20 to the back surface 12 of the LED half 1278464 conductor wafer ίο, the tape 20 is adhesive, Such as 1; 乂 tape. Referring to FIG. 3 again, the (four) semiconductor wafer is cut by the cutting tool 3G to form a plurality of LED chips 15 on the tape 20, so that the Z-LED chip 15 includes at least one p-type electrode 13 and at least one The N-type electrode 14 is such that the p-type layer and the n-type layer of the adjacent LED wafer 15 are electrically independent. Next, referring to FIG. 4, the wafers 15 are tested by a probe card 40. The probe card 40 includes a plurality of probe structures 4, each of which has a plurality of probe ends. 42 and a photodetector 43, the probe terminals 42 are probes or test bumps, and each photodetector 43 has a glass fabric tube. In this embodiment, the photodetector 43 The probe structures 41 are all corresponding to the LED chips 15 . During the test, the probe terminals 42 are ohmically contacted with the p-type electrodes 13 of the LED chips 15 and the Ns. The electrode 14 is preferably in contact with or partially contacting the p-type electrodes 13 and the N-type electrodes 14 of the LED chips 15, and the photodetectors 43 are Between the probe terminals 42 of the corresponding probe structure 41, when a voltage is applied to the LED chips 15 by the probe structures 41, the LED chips 15 will emit light sources, and the light detectors 43 detecting the brightness and hue of the light source of the LED chip 15 to determine the quality of the product. In addition, in addition to wafers that have been wafer-level packaged, the wafer level test method of the light-emitting diode of the present invention can be applied to bare-film LED semiconductor wafers, wire-type or flip-chip type. The LED chip does not need to be tested one by one as in the prior art, and can test an LED semiconductor wafer with full-wafer ohmic contact or block ohmic contact, which greatly shortens the test time, 1278864, and reaches the LED chip 痞LFD曰μ . test.戈 "The size of the package structure of the wafer pole test of the invention, the scope of the protection of the application of the patent, the 4 壬ih left Ο» sth 疋 疋 为 为 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何 任何The protection and protection of the present invention is the protection of the present invention. [Simplified description of the drawing] Fig. 1 Detecting the light-emitting diode according to the present invention The day-to-day solid-level test method of the stock, the LED semiconductor wafer provided by the door is not shown; Figure 1. According to the invention, the hairpin-doing 1 < knowing the special wafer level test method A schematic cross-sectional view of the LED semiconductor after attaching a tape; FIG. 3: According to the illuminating method of the present invention, after the wafer is cut, the surface is not intended, and FIG. 4: According to the present invention Luminescence method, cross-section diagram tested on the probe card 〇t Main component symbol description] 10 LED semiconductor wafer 11 front 12 back 14 N-type electrode 15 LED wafer 17 lead pad 20 tape 30 cutting tool 40 probe card 41 probe structure 13 P-type electrode 16 encapsulation resin layer 42 contact end Γ278644 43 photodetector
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