TWI761232B - Vertical light emitting diode die package with electrical detection position - Google Patents

Abstract

The present invention includes a light-emitting diode die and a carrier board. The light-emitting diode die has a semiconductor epitaxial structure, an interface laterally extending structure, a die conductive base structure, and a semiconductor epitaxial structure. An N-type electrode above the structure and a P-type shunt detection electrode located on the interface laterally extending structure, the die conductive base structure has a P-type main electrode located on the lower side, the package carrier includes a plurality of electrode contacts, The N-type electrode, the P-type shunt detection electrode and the P-type main electrode are connected through the plurality of electrode contacts, so that one of the semiconductor epitaxial structure and the die conductive base structure can be evaluated by detecting electrical characteristics. Substitute the process quality of the substrate adhesive layer and a carrier die bonding adhesive layer between the P-type main electrode and the package carrier. In addition, the present invention also connects the plurality of electrode contacts to the top of the package carrier to achieve simple and accurate electrical characteristic testing.

Description

Vertical light emitting diode die package with electrical detection position

The present invention relates to a die structure of a light emitting diode, and more particularly, to a vertical light emitting diode die with electrical detection points and a corresponding package.

A light emitting diode (LED) is a light source that can generate high brightness by recombining electrons and holes in semiconductors. Products can be used for high-light sterilization (ultraviolet light), vehicle headlights and taillights (blue-yellow-red light), projector light sources (blue-green-red), and infrared security detection (infrared). In addition to high luminosity and luminous density, excellent high-power LED components also need to have good reliability. Taking the car headlight module as an example, once the LED fails, it will affect the safety at night. With the high standard of automotive LEDs, even if a small amount of 1ppm fails, it needs to be improved in the automotive industry, so the accurate photoelectric characteristics of the components are very important. .

As shown in FIG. 1 , in an embodiment, when a vertical LED die 1 is packaged in an SMD package, the P electrode 2 is bonded to the die-bonding conductive base 4 of the package carrier 3 through a die-bonding adhesive layer 4A of the carrier board. On the other hand, the N electrode 5 is electrically connected to the wire bonding terminal 7 by the gold wire 6 through the wire bonding. Anode 9A (Anode) and cathode 9B (Cathode) on the side.

For a vertical LED, the main structure of the vertical LED die 1 includes three parts from top to bottom: a semiconductor epitaxial structure 1A, an interface structure 1B and a die conductive base structure 1C.

The semiconductor epitaxial structure 1A is an N-type semiconductor, a light-emitting layer, and a P-type semiconductor in order from top to bottom. The die conductive base structure 1C is composed of a structural metal layer, a substitute substrate adhesive layer 1C1, and a high thermal conductivity substitute substrate in sequence from top to bottom. The interface structure 1B is generally a structural metal layer with partial or full metal that connects the P-type semiconductor of the semiconductor epitaxial structure 1A and the die conductive base structure 1C in an ohmic contact manner. Below the high thermal conductivity substitute substrate is the P electrode 2 .

The die conductive base structure 1C mainly uses the high thermal conductivity substitute substrate below as the main support structure, and uses the substitute substrate adhesive layer 1C1 to bond with the upper structural metal layer in the wafer process in a wafer-level manner, usually using a metal eutectic. For metal bonding using Eutectic bonding (such as AuSn Eutectic bonding), there is a yield problem in the flat bonding process. If the bonding process is subjected to poor materials and processes, uneven surfaces, holes or When polluted, the impedance will increase abnormally, resulting in the formation of uneven current in the die under high current operation, resulting in local hot spots, resulting in reduced light efficiency and reduced reliability.

In addition, the vertical LED die 1 and the package carrier 3 need to use the carrier die bonding layer 4A to achieve conductive die bonding, (usually metal eutectic bonding is also used for metal die bonding. The uneven bottom of the LED die and the contamination of the attached particles will also cause the resistance of the bottom junction to increase under high current operation, forming a local hot spot and causing the component to burn out.

Finally, for the optoelectronic measurement of the components that need to be carried out in the vertical LED packaging process, the anode (Anode) 9A and the cathode (Cathode) 9B can be used as test contacts and a test instrument can be used for detection to meet the requirements of automotive LEDs. High standard specification.

However, when detecting the vertical LED die 1 in the prior art, abnormal high voltage electrical characteristics (high Vf) are found, which are the overall electrical characteristics of the semiconductor epitaxial structure, the interface structure and the die conductive base structure, and the source of the abnormality cannot be identified. It is a substitute for the substrate adhesive layer and the carrier die bonding layer 4A for the semiconductor epitaxial structure part or the die conductive base structure part.

In addition, for the diode characteristics of the trace voltage and current of the semiconductor layer, due to the influence of the noise of the conductive base structure of the die, it is impossible to accurately measure the tiny electrical characteristics of the forward bias voltage and reverse bias voltage, resulting in epitaxial quality. Judgment is not easy.

Therefore, the main purpose of the present invention is to disclose a vertical light emitting diode die package with a plurality of electrical test position contacts to meet the requirements of semiconductor epitaxial structure, interface structure, die conductive base structure and package carrier structure. Accurate electrical characterization of layers between boards.

The present invention is a vertical light-emitting diode die package with an electrical detection position, which comprises a light-emitting diode die and a carrier board, wherein the light-emitting diode die has a die conductive base A seat structure, an interface lateral extension structure, a semiconductor epitaxial structure, an N-type electrode and a P-type shunt detection electrode. The die conductive base structure has a P-type main electrode located on the lower side, and the P-type main electrode is electrically connected to the package carrier in a planar die-bonding conductive manner. The lateral extension structure of the interface of the present invention comprises a high concentration P-type semiconductor layer, an ohmic contact layer and a high conductive metal layer which are sequentially stacked. The side of the die conductive base structure away from the P-type main electrode is provided with the interface laterally extending structure, and the semiconductor epitaxial structure and the P-type shunt detection electrode are respectively provided on the upper plane of the interface laterally extending structure. An ohmic contact is achieved between the semiconductor epitaxial structure and the die conductive base structure through the interface laterally extending structure.

The N-type electrode is disposed on a side of the semiconductor epitaxial structure away from the die conductive base structure. The die conductive base structure of the present invention further has a structural metal layer, a substitute substrate adhesive layer and a high thermal conductivity substitute substrate, wherein the structural metal layer is located under the laterally extending structure of the interface, and below the structural metal layer The substitute substrate adhesive layer is bonded to the high thermal conductivity substitute substrate, and the P-type main electrode is disposed below the high thermal conductivity substitute substrate. The highly conductive metal layer at the bottom of the laterally extending structure of the interface needs to be chemically stable and favorable for ohmic contact, so as to be connected to the structure metal layer at the top of the die conductive base structure, and the structure metal layer needs to be It is a material that is chemically stable and beneficial to subsequent eutectic bonding.

The high thermal conductivity substitute substrate is located in the die conductive base structure as the main structural support layer, and the high thermal conductivity substitute substrate is bonded with the semiconductor epitaxial above by the substitute substrate bonding layer by metal eutectic bonding (Eutectuc Bonding). The structural metal layer of the structure is connected, and the P-type main electrode is under the high thermal conductivity substitute substrate.

The package carrier has an upper plane and a lower plane on both sides, an anode and a cathode are arranged on the lower plane, and a first electrode of a main element, a second electrode of a main element, a main element are arranged on the upper plane The third electrode of the element, an electrical test first position contact, an electrical test second position contact and an electrical test third position contact, wherein the N-type electrode and the first electrode of the main element are connected by a The first wire bonding metal of the die is electrically connected, the P-type shunt detection electrode and the second electrode of the main element are electrically connected with a second wire bonding metal of the die, and the P-type main electrode is passed through a carrier board. The third electrode of the main element is directly bonded to be electrically connected. The first position contact of the electrical test is electrically connected to the first electrode of the main element and the cathode, the second position of the electrical test is electrically connected to the second electrode of the main element, and the third position of the electrical test is connected to the cathode. The point is electrically connected to the third electrode of the main element and the anode.

Accordingly, the electrical test first position contact is electrically connected to the N-type electrode through the main element first electrode, and the electrical test second position contact is electrically connected to the P through the main element second electrode type shunt detection electrode, and the electrical characteristics between the N-type electrode and the P-type shunt detection electrode are the electrical characteristics of the semiconductor epitaxial structure and the interface laterally extending structure.

Therefore, the electrical characteristics of the semiconductor epitaxial structure and the interface laterally extending structure can be known by detecting the first position contact of the electrical test and the second position contact of the electrical test, especially the semiconductor epitaxial structure can be accurately measured The precise value of the trace electrical properties of the structure (diode) under forward bias and reverse bias can more effectively evaluate the epitaxial process quality of the semiconductor epitaxial structure.

In addition, the third position contact of the electrical test is electrically connected to the P-type main electrode through the third electrode of the main element, so the electrical test is carried out through the second position contact of the electrical test and the third position contact of the electrical test The electrical characteristics of the die conductive base structure and the carrier die bonding layer between the P-type main electrode and the third electrode of the main element can be obtained by testing, and then the substitute substrate bonding layer and the carrier can be evaluated. Process quality of die-bonding bonding layers.

In order to make your members have a more in-depth understanding and recognition of the features, purposes and effects of the present invention, hereby enumerates a preferred embodiment and cooperates with the drawings to describe as follows:

Please refer to FIG. 2 and FIG. 3 , which is a first embodiment of the present invention, which includes a light-emitting diode die 10 and a carrier board 30 , wherein the light-emitting diode die 10 has a die conductive base The base structure 11, an interface lateral extension structure 12, a semiconductor epitaxial structure 13, an N-type electrode 14 and a P-type shunt detection electrode 15, wherein the die conductive base structure 11 has a P-type main Electrode 16, the side of the die conductive base structure 11 away from the P-type main electrode 16 is provided with the interface lateral extension structure 12, and the semiconductor epitaxial structure 13 and the P-type lateral extension structure 12 are respectively on the upper plane of the interface lateral extension structure 12. The shunt detection electrode 15 is in ohmic contact between the semiconductor epitaxial structure 13 and the die conductive base structure 11 through the interface lateral extension structure 12 , and the semiconductor epitaxial structure 13 is far away from the die conductive base structure 11 The N-type electrode 14 is provided on one side.

The package carrier 30 has an upper plane 301 and a lower plane 302 on two sides. An anode 313 and a cathode 311 are disposed on the lower plane 302 , and a main element first electrode 41 and a main element are disposed on the upper plane 301 . The element second electrode 42 , a main element third electrode 43 , an electrical test first position contact 51 , an electrical test second position contact 52 and an electrical test third position contact 53 , wherein the N The P-type electrode 14 and the first electrode 41 of the main element are electrically connected with the first wire bonding metal 61 of a die, and the P-type shunt detection electrode 15 and the second electrode 42 of the main element are the second wire bonding metal 62 of a die. For electrical connection, the P-type main electrode 16 is electrically connected by directly bonding the third electrode 43 of the main element through a die-bonding adhesive layer 431 (die-bonding conductive adhesive or metal) on a carrier board. The electrical test first position contact 51 is electrically connected to the main element first electrode 41 and the cathode 311, the electrical test second position contact 52 is electrically connected to the main element second electrode 42, the electrical test The third position contact 53 is electrically connected to the third electrode 43 of the main element and the anode 313 .

In actual structure, the package carrier 30 can be a ceramic substrate (aluminum nitride, aluminum oxide, silicon carbide), a copper substrate, a BT (Bismaleimide Triazine) board, etc. The package carrier 30 can be a single-layer board or a Multilayer board. The main element first electrode 41 and the cathode 311 are electrically connected through a carrier metal first conductive metal 71 penetrating the package carrier 30 , and the main element third electrode 43 and the anode 313 are electrically connected through a carrier metal first conducting metal 71 penetrating the package carrier 30 . The carrier metal of the board 30 is electrically connected to the second conductive metal 73 . In addition, the package carrier 30 can be a multilayer board structure, the electrical testing first position contact 51 and the main element first electrode 41, the electrical testing second position contact 52 and the main element second The electrical connection between the electrodes 42 and the electrical connection between the electrical test third position contact 53 and the main element third electrode 43 can use the metal conductive layers 303 , 304 , 305 buried in the package carrier 30 . (drawn in FIG. 3 ) are electrically connected, and the metal conductive layers 303 , 304 , 305 can also be formed on the upper plane 301 of the package carrier 30 (as shown in FIG. 7 ).

Referring to FIG. 4 again, in one embodiment, the semiconductor epitaxial structure 13 includes a P-type semiconductor 13A, an active layer 13B and an N-type semiconductor 13C stacked in sequence, wherein the N-type electrode 14 is located on the On the N-type semiconductor 13C, the die conductive base structure 11 further has a high thermal conductivity substitute substrate 11A, a substitute substrate adhesive layer 11B and a structural metal layer 11C stacked in sequence. The P-type semiconductor 13A and the P-type shunt detection electrode 15 are respectively located at different positions of the interface laterally extending structure 12 . The interface lateral extension structure 12 includes a highly conductive metal layer 12A, an ohmic contact layer 12B and a high concentration P-type semiconductor conductive layer 12C stacked in sequence, and the P-type shunt detection electrode 15 is located on the interface lateral extension structure 12 . outside the edge. The highly conductive metal layer 12A is located above the structural metal layer 11C, and the P-type semiconductor 13A and the P-type shunt detection electrode 15 are respectively located on the high-concentration P-type semiconductor conductive layer 12C. In this embodiment, commonly used in quaternary (aluminum, gallium, indium, phosphor) LEDs, the high-concentration P-type semiconductor conductive layer 12C can be p-GaP, and the ohmic contact layer 12B can be an ohmic contact metal 12B1 with a transparent material 12B2, and the ohmic contact metal 12B1 is a complex columnar (BeAu columnar) structure (as shown in the oblique line frame in FIG. 4 ) to contact and connect the upper and lower layers, or the ohmic contact metal 12B1 can also be an ohmic contact conduction block; the high The conductive metal layer 12A is Ag/TiW/Pt.

Referring to FIG. 5 again, in another embodiment, the P-type shunt detection electrode 15 may be directly located on the ohmic contact layer 12B. This structure is usually used for nitride blue LED (aluminum, gallium, indium, nitrogen), the high concentration p-type semiconductor conductive layer 12C can be p-GaN or p-InGaN; the ohmic contact layer 12B is ITO, the high conductive metal Layer 12A is Ag and TiW.

Referring to FIG. 6 again, in another embodiment, the P-type shunt detection electrode 15 may also be directly located on the high conductive metal layer 12A. This structure is usually used for nitride blue LEDs, the high-concentration p-type semiconductor conductive layer 12C can be p-GaN or p-InGaN; the ohmic contact layer 12B is Ag, and the high-conductive metal layer 12A is TiW or Pt or its mixture.

The vertical light-emitting diode die with the P-type shunt detection electrode 15 for electrical detection and the package carrier 30 with the detection position are designed as follows. Referring to FIG. 7 again, the upper plane 301 of the package carrier 30 may have a die-bonding base 33 as the third electrode 43 of the main element, the P-type main electrode 16 of the light-emitting diode die 10 ( FIG. 7 ) (not shown) conductive die-bonding on the die-bonding base 33, the N-type electrode is electrically connected to the first electrode 41 of the main element through the first wire bonding metal 61 of the die, and the P-type shunt detection electrode 15 passes through the second die of the die The wire bonding metal 62 is electrically connected to the second electrode 42 of the main element. And the upper plane 301 of the package carrier 30 may also have two different wire bonding terminals 34A, 34B, and the two different wire bonding terminals 34A, 34B are respectively used as the first electrode 41 of the main element and the second electrode of the main element. Electrode 42 is used.

Referring again to FIG. 8 , in addition to the cathode 311 and the anode 313 , the lower plane 302 of the package carrier 30 can also be provided with an elevated layer 315 , and the height of the elevated layer 315 is equal to that of the cathode 311 and the anode 313 . The anode 313 is of the same height, which can be increased to meet the needs of subsequent processes.

Please refer to FIG. 9 and FIG. 10 , which are the second embodiment of the present invention. Compared with the first embodiment, the package carrier 30 further includes a first electrode 81 of a sub-element and a second electrode 84 of a sub-element and an electrical test fourth position contact 54, wherein the secondary element first electrode 81 is electrically connected to the electrical test first position contact 51, and the secondary element second electrode 84 is electrically connected to the electrical test fourth A Zener diode 85 is electrically connected between the first electrode 81 of the sub-element and the second electrode 84 of the sub-element. In actual implementation, the first electrode 81 of the sub-element and the electrical testing first position contact 51 are electrically connected through the metal conductive layer 303 , and the second electrode 84 of the sub-element is electrically connected to the electrical test In the test, the contacts 54 at the fourth position are electrically connected through a metal conductive layer 306 .

And this Zener diode 85 can choose bidirectional Zener Diodes (Bi-directional Zener Diodes), it comprises the unidirectional Zener diode 85A and the unidirectional Zener diode 85B which are arranged in different directions (as shown in the figure). 9 drawn). Alternatively, only the unidirectional zener diode 85A can be used. If it is a unidirectional zener diode 85A (Zener Diode), the unidirectional zener diode 85A needs to be connected in parallel with the light-emitting diode crystal with opposite polarity. 10 grains.

In the second embodiment of the present invention, the light-emitting diode package structure circuit has four test contacts, namely, the electrical test first position contact 51, the electrical test second position contact 52, the electrical test Test the third position contact 53 and the electrical test fourth position contact 54, as shown in FIG. 9, wherein the electrical test first position contact 51 and the electrical test fourth position contact 54 are selected for testing , which can be used to test whether the Zener diode 85 operates normally. By selecting the electrical test second position contact 52 and the electrical test third position contact 53 for testing, it can be known that the substitute substrate adhesive layer 11B and the connection between the P-type main electrode 16 and the package carrier 30 are Electrical characteristics of the die-bonding adhesive layer 431 of the carrier.

Selecting the electrical test first position contact 51 and the electrical test second position contact 52 for testing can accurately detect the difference between the trace voltage and current of the semiconductor epitaxial structure 13 under forward bias and reverse bias. characteristic.

And in the presence of the Zener diode 85, the small current forward Vf of the light emitting diode die 10 can also be measured, and whether the leakage current of the light emitting diode die 10 under the reverse bias voltage is there. Abnormal increase, and the reason for the increase of reverse bias leakage current is the expansion of semiconductor defects, which can be mechanical stress and thermal stress in the packaging process or product tightening test, entering high temperature furnace aging or applying ESD test, etc.

After the test is completed, the electrical test second position contact 52 , the electrical test third position contact 53 and the electrical test fourth position contact 54 can be electrically connected through a conductive metal 90 . together. The conductive metal 90 can be formed by using gold wires in a wire bonding process, or by using semiconductor thin films.

In addition, in order to protect the components on the package carrier board 30, after the test is completed, as shown in FIG. 3, a package material 91 may be further included. Components on the package carrier 30 are protected.

Alternatively, as shown in FIG. 10 , a first encapsulation material 92 and a second encapsulation material 93 may be further included. The first encapsulation material 92 covers the light-emitting diode die 10 and the die is first A wire bonding metal 61 , the die second wire bonding metal 62 , the Zener diode 85 , the main element first electrode 41 , the main element second electrode 42 , the main element third electrode 43 , the secondary element first electrode 43 An electrode 81 and a second electrode 84 of the secondary element.

Then use the electrical testing first position contact 51 , the electrical testing second position contact 52 , the electrical testing third position contact 53 and the electrical testing fourth position contact 54 that have not yet been packaged for testing , which can solve the problem that during the conventional packaging process, the first wire bonding metal 61 of the die and the second wire bonding metal 62 of the die will be covered by the packaging material 91 (as shown in FIG. 3 ) or the first packaging material 92 (as shown in FIG. 3 ). 10) pulling and indirect pulling may damage the light-emitting diode die 10, causing it to form micro-cracks or film peeling, resulting in failure or instability.

After the test is completed, similarly, the conductive metal 90 can pass through the conductive metal 90 between the electrical test second position contact 52 , the electrical test third position contact 53 and the electrical test fourth position contact 54 . electrically connected together. Finally, let the second package material 93 cover the conductive metal 90 , the electrical test first position contact 51 , the electrical test second position contact 52 , the electrical test third position contact 53 and the electrical test The fourth position contact 54 is tested to complete the overall packaging process.

In addition, if the element fails, the second encapsulation material 93 and the conductive metal 90 can be disassembled separately or disconnected, which will not damage the light-emitting diode die 10, so it can be re-tested to find out the real cause of the element failure. .

Please refer to FIG. 11 , which is a schematic top view of the package carrier according to the second embodiment of the present invention. Compared with FIG. 7 , the fourth position contact 54 for electrical testing, the first electrode 81 of the sub-element, the second electrode 84 of the sub-element and the Zener diode 85 are further provided, wherein the Zener The diode 85 is electrically connected to the first electrode 81 of the auxiliary element and the second electrode 84 of the auxiliary element. The first electrode 81 of the auxiliary element and the first electrode 41 of the main element are formed by the same bonding terminal 34A, and the other The wire bonding terminal 34B is the main component second electrode 42, the secondary component second electrode 84 is formed by another wire bonding terminal 34C, and the secondary component second electrode 84 and the electrical test fourth position contact 54 are It is electrically connected through the metal conductive layer 306 .

As mentioned above, the features of the present invention include at least:

1. The P-type shunt detection electrode is located on the laterally extending structure of the interface at the interface of the semiconductor epitaxial structure and the die conductive base structure, as long as the electrical test second position contact is connected to the P-type shunt detection electrode, That is, the respective electrical properties of the semiconductor epitaxial structure and the die conductive base structure can be measured, so as to achieve accurate semiconductor device characteristic testing and further improve reliability.

2. The first position contact point of the electrical test, the second position contact point of the electrical test, and the third position contact point of the electrical test are centrally arranged on the upper plane of the package carrier board, which can facilitate the probe from top to bottom The lower contact measurement is more convenient and accurate, and after the test, the endpoints of the multiple test points are connected simply and stably, which will not affect the characteristics of the LED components.

3. In Example 2, by adding a fourth position contact for the electrical property test, the electrical properties of the light-emitting diode die under reverse bias can be measured in the presence of the Zener diode, or After applying high temperature aging and ESD test, it is determined whether there is reverse bias leakage current, which helps to improve the reliability of the light emitting diode die 10 .

4. In Embodiment 2, it is possible to test whether the function of the Zener diode is normal, so as to avoid the failure of the whole device due to the failure of the Zener diode.

acquaintance 1: Vertical LED Die 1A: Semiconductor epitaxial structure 1B: Interface Structure 1C: Die conductive base structure 1C1: Alternative Substrate Bonding Layer 2: P electrode 3: Package carrier board 4: Solid crystal conductive base 4A: carrier board die bonding layer 5:N electrode 6: Gold wire 7: Line endpoints 8: Conductive metal 9A: Anode 9B: Cathode this invention 10: Light Emitting Diode Die 11: Die conductive base structure 11A: High thermal conductivity alternative substrate 11B: Alternative Substrate Adhesive Layer 11C: Structural metal layer 12: Interface horizontal extension structure 12A: Highly conductive metal layer 12B: Ohmic Contact Layer 12B1: Ohmic Contact Metal 12B2: Transparent Materials 12C: high concentration P-type semiconductor conductive layer 13: Semiconductor epitaxial structure 13A: P-type semiconductor 13B: Active layer 13C: N-type semiconductor 14: N-type electrode 15: P-type shunt detection electrode 16: P-type main electrode 30: Package carrier board 301: Upper side plane 302: Lower side plane 303, 304, 305, 306: metal conductive layer 311: Cathode 313: Anode 315: Increase the floor 33: Solid crystal base 34A, 34B, 34C: wire end points 41: The first electrode of the main element 42: The second electrode of the main element 43: The third electrode of the main element 431: carrier board die-bonding adhesive layer 51: Electrical test first position contact 52: Electrical test second position contact 53: Electrical test third position contact 54: Electrical test fourth position contact 61: Die first wire bonding metal 62: Die second wire bonding metal 71: The first conductive metal of the carrier metal 73: carrier metal second conductive metal 81: Sub-element first electrode 84: Secondary element second electrode 85: Zener Diode 85A, 85B: Unidirectional Zener Diode 90: Conductive metal 91: Packaging material 92: The first packaging material 93: Second packaging material

FIG. 1 is a schematic cross-sectional view of a conventional light-emitting diode package structure. FIG. 2 is a schematic diagram of a package structure circuit according to the first embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of the package structure according to the first embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a grain structure according to an embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a crystal grain structure according to another embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a crystal grain structure according to another embodiment of the present invention. FIG. 7 is a schematic top view of a package carrier according to the first embodiment of the present invention. FIG. 8 is a schematic bottom view of the package carrier board according to the first embodiment of the present invention. FIG. 9 is a schematic diagram of a package structure circuit according to a second embodiment of the present invention. FIG. 10 is a schematic cross-sectional view of the package structure according to the second embodiment of the present invention. FIG. 11 is a schematic top view of a package carrier board according to the second embodiment of the present invention.

10: Light Emitting Diode Die

11: Die conductive base structure

12: Interface horizontal extension structure

13: Semiconductor epitaxial structure

14: N-type electrode

15: P-type shunt detection electrode

16: P-type main electrode

30: Package carrier board

301: Upper side plane

302: Lower side plane

303, 304, 305: Metal conductive layer

311: Cathode

313: Anode

41: The first electrode of the main element

42: The second electrode of the main element

43: The third electrode of the main element

431: carrier board die-bonding adhesive layer

51: Electrical test first position contact

52: Electrical test second position contact

53: Electrical test third position contact

61: Die first wire bonding metal

62: Die second wire bonding metal

71: The first conductive metal of the carrier metal

73: carrier metal second conductive metal

90: Conductive metal

91: Packaging material

Claims (15)

A vertical light-emitting diode die package with an electrical detection position, comprising: a light-emitting diode die, the light-emitting diode die has a die conductive base structure, an interface lateral extension structure, a semiconductor epitaxial structure, an N-type electrode and a P-type shunt detection electrode, wherein the The die conductive base structure has a P-type main electrode located on the lower side, the side of the die conductive base structure away from the P-type main electrode is provided with the interface laterally extending structure, and the upper plane of the interface laterally extending structure is respectively The semiconductor epitaxial structure and the P-type shunt detection electrode are arranged, the semiconductor epitaxial structure and the die conductive base structure achieve ohmic contact through the interface lateral extension structure, and the semiconductor epitaxial structure is far away from the die The N-type electrode is arranged on one side of the conductive base structure; the die conductive base structure further has a structural metal layer, a substitute substrate adhesive layer and a high thermal conductivity substitute substrate, and the structural metal layer is located between the laterally extending structure of the interface Below, the high thermal conductivity substitute substrate is bonded with the substitute substrate adhesive layer below the structural metal layer, and the P-type main electrode is arranged below the high thermal conductivity substitute substrate; A package carrier, the package carrier has an upper side plane and a lower side plane located on both sides, an anode and a cathode are arranged on the lower side plane, and a main element first electrode and a main element second electrode are arranged on the upper side plane. electrode, a main element third electrode, an electrical test first position contact, an electrical test second position contact and an electrical test third position contact, wherein the N-type electrode and the main element first The electrode is electrically connected with a first wire bonding metal of a die, the P-type shunt detection electrode and the second electrode of the main element are electrically connected with a second wire bonding metal of a die, and the P-type main electrode is passed through a carrier board The die-bonding adhesive layer directly bonds the third electrode of the main element to be electrically connected, and the electrical test first position contact is electrically connected to the main element first electrode and the cathode, and the electrical test second position contact is electrically connected. The second electrode of the main element is electrically connected, and the electrical test third position contact is electrically connected to the third electrode of the main element and the anode. The vertical light-emitting diode die package as claimed in claim 1, wherein the package carrier further comprises a first electrode of a sub-element, a second electrode of a sub-element, and a fourth position contact for electrical testing, wherein The first electrode of the sub-element is electrically connected to the first position contact of the electrical test, the second electrode of the sub-element is electrically connected to the fourth position of the electrical test, and the first electrode of the sub-element is connected to the first position of the sub-element A Zener diode is electrically connected between the two electrodes. The vertical light-emitting diode die package as claimed in claim 2, wherein the Zener diode is a unidirectional diode, and the Zener diode is connected in parallel with the light-emitting diode die with opposite polarities . The vertical light-emitting diode die package as claimed in claim 2, wherein the electrical test second position contact, the electrical test third position contact and the electrical test fourth position contact They are electrically connected together through a conductive metal. The vertical light-emitting diode die package as claimed in claim 4, further comprising an encapsulation material covering the upper plane for encapsulating the package carrier. The vertical light-emitting diode die package according to claim 2, further comprising a first packaging material, the first packaging material covering the light-emitting diode die, the die first wire bonding metal, the die The second wire bonding metal of the die, the Zener diode, the first electrode of the main element, the second electrode of the main element, the third electrode of the main element, the first electrode of the auxiliary element and the second electrode of the auxiliary element. The vertical light-emitting diode die package as claimed in claim 6, wherein the electrical test second position contact, the electrical test third position contact and the electrical test fourth position contact It is electrically connected through a conductive metal. The vertical light-emitting diode die package as claimed in claim 7, further comprising a second packaging material, the second packaging material covering the conductive metal, the electrical property testing first position contact, the electrical property The second position contact for testing, the third position contact for electrical testing and the fourth position contact for electrical testing are tested. The vertical light-emitting diode die package as claimed in claim 1, wherein the first electrode of the main element and the cathode are electrically connected through a carrier metal first conducting metal penetrating the package carrier, and the main element is electrically connected to the cathode. The third electrode of the element and the anode are electrically connected through a carrier metal second conductive metal penetrating the package carrier. The vertical light-emitting diode die package as claimed in claim 1, wherein the semiconductor epitaxial structure comprises a P-type semiconductor, an active layer and an N-type semiconductor sequentially stacked, wherein the N-type electrode is located on the On the N-type semiconductor, the P-type semiconductor and the P-type shunt detection electrode are respectively located at different positions of the laterally extending structure of the interface. The vertical light-emitting diode die package as claimed in claim 10, wherein the interface laterally extending structure comprises a high-conductivity metal layer, an ohmic contact layer and a high-concentration P-type semiconductor conductive layer stacked in sequence, and The P-type shunt detection electrode is located outside the edge of the laterally extending structure of the interface. The vertical light-emitting diode die package as claimed in claim 11, wherein the high-conductivity metal layer is located above the structural metal layer, and the P-type semiconductor and the P-type shunt detection electrode are respectively located on the high-concentration P-type on the semiconductor conductive layer. The vertical light emitting diode die package as claimed in claim 11, wherein the highly conductive metal layer is located above the structural metal layer, the P-type semiconductor is located on the high-concentration P-type semiconductor conductive layer, and the P A type shunt detection electrode is located on the ohmic contact layer. The vertical light emitting diode die package as claimed in claim 11, wherein the highly conductive metal layer is located above the structural metal layer, the P-type semiconductor is located on the high-concentration P-type semiconductor conductive layer, and the P Type shunt detection electrodes are located on the highly conductive metal layer. The vertical light-emitting diode die package as claimed in claim 11, wherein the ohmic contact layer can be an ohmic contact metal and a transparent material, and the ohmic contact metal has a plurality of columnar structures.

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