TWI821750B - Electronic component measuring equipment, electronic component measuring method, and led manufacturing method - Google Patents

Electronic component measuring equipment, electronic component measuring method, and led manufacturing method Download PDF

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TWI821750B
TWI821750B TW110135673A TW110135673A TWI821750B TW I821750 B TWI821750 B TW I821750B TW 110135673 A TW110135673 A TW 110135673A TW 110135673 A TW110135673 A TW 110135673A TW I821750 B TWI821750 B TW I821750B
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probe
electronic component
carrying platform
substrate
under test
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TW110135673A
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TW202215067A (en
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陳英杰
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台灣愛司帝科技股份有限公司
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Priority to CN202111163068.8A priority Critical patent/CN114295948B/en
Priority to US17/494,864 priority patent/US11488876B2/en
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
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Abstract

An electronic component measuring equipment has a first carrying platform, a second carrying platform, an actuating device, a current output module, a switching device and an optical measuring element. The first carrying platform is used to carry a probe substrate, and a plurality of probe pairs are arranged on the probe substrate. The second carrying platform is used to carry a tested substrate, and a plurality of electronic components to be tested are placed on the tested substrate. The actuating device is used to make at least part of the probe pairs on the probe substrate respectively contact the corresponding electronic components to be tested. The current output module provides a constant current to the probe substrate, and forms a conductive loop between the probe pair and the electronic component to be tested. The switching device is used to switch the constant current provided by the current output module to different probe pairs. The optical measuring component is used to measure the optical signal generated by the electronic component under test.

Description

電子元件量測設備、電子元件量測方法及發光二極體的製 造方法 Electronic component measuring equipment, electronic component measuring method and manufacturing of light emitting diodes manufacturing method

本發明涉及一種電子元件量測設備、電子元件量測方法及發光二極體的製造方法。 The invention relates to an electronic component measuring equipment, an electronic component measuring method and a manufacturing method of a light emitting diode.

現有技術中的多數個待測電子元件需要先從晶圓基底上彼此分離後再各別進行光學檢測,如此的檢測方式不但費時而且又費工。 In the prior art, many electronic components to be tested need to be separated from each other from the wafer substrate and then optically inspected individually. Such inspection method is not only time-consuming but also labor-intensive.

本發明所要解決的技術問題在於,針對現有技術的不足提供一種電子元件量測設備、電子元件量測方法及發光二極體的製造方法。 The technical problem to be solved by the present invention is to provide an electronic component measuring equipment, an electronic component measuring method and a light-emitting diode manufacturing method in view of the shortcomings of the existing technology.

為了解決上述的技術問題,本發明所採用的其中一技術方案是提供一種電子元件量測設備,其包括一第一承載平台、一第二承載平台、一致動裝置、一電流輸出模組、一切換裝置以及一光學量測元件。第一承載平台其係用於承載一探針基板,該探針基板上係設有多數個探針對。第二承載平台其係用於承載一受測基板,該受測基板上係置放有多數個待測電子元件。致動裝置係用於使該第一承載平台與該第二承載平台相互靠近,以使該第一承載平 台所承載之探針基板上至少部分的探針對分別與相對應的該第二承載平台所承載之受測基板上的待測電子元件接觸。電流輸出模組其係可提供一定電流至該第一承載平台所承載之探針基板,並經由該探針對使其與該探針對所接觸的待測電子元件間形成一導電迴路,而該待測電子元件係可藉由該導電迴路產生一光訊號。切換裝置係可切換該電流輸出模組所提供之定電流至不同的探針對。光學量測元件係用於量測該第二承載平台所承載之受測基板上的待測電子元件所產生的光訊號。 In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide an electronic component measuring equipment, which includes a first carrying platform, a second carrying platform, an actuating device, a current output module, and a switching device and an optical measuring element. The first carrying platform is used to carry a probe substrate, which is provided with a plurality of probe pairs. The second carrying platform is used to carry a substrate under test on which a plurality of electronic components under test are placed. The actuating device is used to bring the first load-bearing platform and the second load-bearing platform close to each other, so that the first load-bearing platform can be leveled At least part of the probe pairs on the probe substrate carried by the stage are respectively in contact with the corresponding electronic components to be tested on the substrate under test carried by the second carrying platform. The current output module can provide a certain current to the probe substrate carried by the first carrying platform, and form a conductive loop through the probe pair and the electronic component to be tested in contact with the probe pair, and the to-be-tested electronic component is in contact with the probe pair. The measuring electronic component can generate an optical signal through the conductive loop. The switching device can switch the constant current provided by the current output module to different probe pairs. The optical measuring element is used to measure the optical signal generated by the electronic component under test on the substrate under test carried by the second carrying platform.

為了解決上述的技術問題,本發明所採用的另外一技術方案是提供一種電子元件量測設備,其包括:一第一承載平台、一第二承載平台、一致動裝置、一電流輸出模組、一切換裝置、一電壓量測元件以及一運算裝置。第一承載平台係用於承載一探針基板,該探針基板上係設有多數個探針對。第二承載平台係用於承載一受測基板,該受測基板上係置放有多數個待測電子元件。致動裝置係用於使該第一承載平台與該第二承載平台相互靠近,以使該第一承載平台所承載之探針基板上至少部分的探針對分別與相對應的該第二承載平台所承載之受測基板上的待測電子元件接觸。電流輸出模組係可提供一定電流至該第一承載平台所承載之探針基板,並經由該探針對使其與該探針對所接觸的待測電子元件間形成一導電迴路。切換裝置係可切換該電流輸出模組所提供之定電流至不同的探針對。電壓量測元件係用於量測該第二承載平台所承載之受測基板上的待測電子元件的電壓。 In order to solve the above technical problems, another technical solution adopted by the present invention is to provide an electronic component measuring equipment, which includes: a first carrying platform, a second carrying platform, an actuating device, a current output module, a switching device, a voltage measuring element and a computing device. The first carrying platform is used to carry a probe substrate, which is provided with a plurality of probe pairs. The second carrying platform is used to carry a substrate under test, on which a plurality of electronic components under test are placed. The actuating device is used to bring the first carrying platform and the second carrying platform close to each other, so that at least part of the probe pairs on the probe substrate carried by the first carrying platform are respectively in contact with the corresponding second carrying platform. The electronic components under test on the substrate under test are in contact. The current output module can provide a certain current to the probe substrate carried by the first carrying platform, and form a conductive loop through the probe pair and the electronic component under test in contact with the probe pair. The switching device can switch the constant current provided by the current output module to different probe pairs. The voltage measuring element is used to measure the voltage of the electronic component under test on the substrate under test carried by the second carrying platform.

為了解決上述的技術問題,本發明所採用的另外再一技術方案是提供一種電子元件量測方法,其包括:提供一受測基板,該受測基板上係置放有多數個待測電子元件;使該多數個待測電子元件藉由一線路而形成多數個待測迴路;提供一定電流至該多數個待測迴路之至少一者以形成一導電迴路;以及量測該多數個待測電子元件之至少一者所產生之光訊號。 In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a method for measuring electronic components, which includes: providing a substrate under test on which a plurality of electronic components under test are placed. ; causing the plurality of electronic components to be tested to form a plurality of circuits to be tested through a line; providing a certain current to at least one of the plurality of circuits to be tested to form a conductive circuit; and measuring the plurality of electronic components to be tested A light signal generated by at least one of the components.

為了解決上述的技術問題,本發明所採用的另外再一技術方案是一種電子元件量測方法,其包括:提供一受測基板,該受測基板上係置放有多數個已知電阻值之電阻元件;使該多數個已知電阻值之電阻元件藉由一線路而形成多數個第一待測迴路;提供一定電流至該多數個第一待測迴路之一者以形成一第一導電迴路,於該定電流下量測該第一導電迴路的跨壓,而得到一第一驅動電壓;將該多數個已知電阻值之電阻元件置換為多數個電子元件;使該多數個電子元件藉由該線路而形成多數個第二待測迴路;提供該定電流至該多數個第二待測迴路之一者以形成一第二導電迴路,於該定電流下量測電壓,而得到一第二驅動電壓;以及計算相對應的該第一驅動電壓與該第二驅動電壓之間的電壓差。 In order to solve the above technical problems, another technical solution adopted by the present invention is an electronic component measurement method, which includes: providing a substrate under test on which a plurality of known resistance values are placed. Resistive elements; allowing the plurality of resistive elements with known resistance values to form a plurality of first circuits to be measured through a line; providing a certain current to one of the plurality of first circuits to be measured to form a first conductive circuit , measure the cross-voltage of the first conductive loop under the constant current to obtain a first driving voltage; replace the plurality of resistive elements with known resistance values with a plurality of electronic components; make the plurality of electronic components use A plurality of second circuits to be measured are formed by the circuit; the constant current is provided to one of the plurality of second circuits to be measured to form a second conductive circuit, and a voltage is measured under the constant current to obtain a first two driving voltages; and calculating the voltage difference between the corresponding first driving voltage and the second driving voltage.

為了解決上述的技術問題,本發明所採用的另外再一技術方案是提供一種發光二極體的製造方法,其係包括如上所述之電子元件量測方法。 In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a manufacturing method of a light emitting diode, which includes the electronic component measurement method as described above.

為使能進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。 In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and illustration and are not used to limit the present invention.

Z1~Z4:電子元件量測設備 Z1~Z4: Electronic component measuring equipment

M1:第二承載平台 M1: Second carrying platform

M2:第一承載平台 M2: the first carrying platform

M3:光學量測元件 M3: Optical measuring element

B1:第一對位記號 B1: first counterpoint mark

B2:第二對位記號 B2: Second counterpoint mark

S:受測基板 S: Tested substrate

S1:切換裝置 S1: switching device

C:待測電子元件 C: Electronic components to be tested

C101:第一導電接點 C101: First conductive contact

C102:第二導電接點 C102: Second conductive contact

C1:電流輸出模組 C1: Current output module

E1:致動裝置 E1: Actuating device

D:運算裝置 D: computing device

VD1:電壓量測元件 VD1: Voltage measuring element

V1:電壓輸出模組 V1: Voltage output module

IP:影像處理裝置 IP: image processing device

1:探針基板 1: Probe substrate

101:第一導電線路 101: First conductive line

102:第二導電線路 102: Second conductive line

2G:導電探針群組 2G: Conductive probe group

2:探針對 2: Probe pair

21:第一導電接觸腳 21: First conductive contact pin

211:第一柱體 211:First cylinder

212:第一導電層 212: First conductive layer

213:第一彈性接觸層 213: First elastic contact layer

22:第二導電接觸腳 22: Second conductive contact pin

221:第二柱體 221:Second cylinder

222:第二導電層 222: Second conductive layer

223:第二彈性接觸層 223: Second elastic contact layer

P:導電電極組 P: Conductive electrode group

PG1:第一導電電極組 PG1: First conductive electrode group

PG2:第二導電電極組 PG2: Second conductive electrode group

P1:第一導電電極 P1: first conductive electrode

P2:第二導電電極 P2: Second conductive electrode

3:控制晶片 3: Control chip

T1:第一總導電電極 T1: The first total conductive electrode

T2:第二總導電電極 T2: The second total conductive electrode

L:光源 L: light source

R1:第一材料層 R1: first material layer

R2:第二材料層 R2: Second material layer

W:晶圓材料 W:wafer material

S110、S130、S150、S170、S210、S230、S250、S270、S290、S310、S330:步驟 S110, S130, S150, S170, S210, S230, S250, S270, S290, S310, S330: Steps

圖1為本發明其中一實施例的探針基板的製作方法的步驟中有關形成一第一材料層於一晶圓材料上的俯視示意圖。 FIG. 1 is a schematic top view of forming a first material layer on a wafer material during the steps of a method for manufacturing a probe substrate according to one embodiment of the present invention.

圖2為本發明其中一實施例的探針基板的製作方法的步驟中有關形成一第一材料層於一晶圓材料上的側視示意圖。 FIG. 2 is a schematic side view of forming a first material layer on a wafer material during the steps of a method for manufacturing a probe substrate according to one embodiment of the present invention.

圖3為本發明其中一實施例的探針基板的製作方法的步驟中有關移除一部分的第一材料層以在晶圓材料上形成多個第一柱體、多個第二柱體以及多個第二對位記號的俯視示意圖。 FIG. 3 shows the steps of removing a portion of the first material layer to form a plurality of first pillars, a plurality of second pillars and a plurality of second pillars on the wafer material in the manufacturing method of the probe substrate according to one embodiment of the present invention. A top view of the second counterpoint mark.

圖4為本發明其中一實施例的探針基板的製作方法的步驟中有關移除一部分的第一材料層以在晶圓材料上形成多個第一柱體、多個第二柱體以及多個第二對位記號的側視示意圖。 FIG. 4 shows the steps of removing a portion of the first material layer to form a plurality of first pillars, a plurality of second pillars and a plurality of second pillars on the wafer material in the manufacturing method of the probe substrate according to one embodiment of the present invention. A side view of the second counterpoint mark.

圖5為本發明其中一實施例的探針基板的製作方法的步驟中有關形成一第二材料層於晶圓材料上以覆蓋多個第一柱體、多個第二柱體以及多個第二對位記號的俯視示意圖。 FIG. 5 shows the steps of forming a second material layer on the wafer material to cover a plurality of first pillars, a plurality of second pillars and a plurality of third pillars in the manufacturing method of a probe substrate according to one embodiment of the present invention. A top view of the two counterpoint marks.

圖6為本發明其中一實施例的探針基板的製作方法的步驟中有關形成一第二材料層於晶圓材料上以覆蓋多個第一柱體、多個第二柱體以及多個第二對位記號的側視示意圖。 FIG. 6 shows the steps of forming a second material layer on the wafer material to cover a plurality of first pillars, a plurality of second pillars and a plurality of third pillars in the manufacturing method of a probe substrate according to one embodiment of the present invention. Side view of two counterpoint marks.

圖7為本發明其中一實施例的探針基板的俯視示意圖。 FIG. 7 is a schematic top view of a probe substrate according to one embodiment of the present invention.

圖8為本發明其中一實施例的探針基板的側視示意圖。 FIG. 8 is a schematic side view of a probe substrate according to one embodiment of the present invention.

圖9為本發明其中一實施例的第一總導電電極與多個第一導電電極之間的電性連接關係的功能方塊圖。 FIG. 9 is a functional block diagram of the electrical connection relationship between the first main conductive electrode and the plurality of first conductive electrodes according to one embodiment of the present invention.

圖10為本發明其中一實施例的第二總導電電極與多個第二導電電極之間的電性連接關係的功能方塊圖。 FIG. 10 is a functional block diagram of the electrical connection relationship between the second main conductive electrode and the plurality of second conductive electrodes according to one embodiment of the present invention.

圖11為本發明其中一實施例的受測基板的俯視示意圖。 FIG. 11 is a schematic top view of the substrate under test according to one embodiment of the present invention.

圖12為本發明其中一實施例的受測基板的側視示意圖。 FIG. 12 is a schematic side view of the substrate under test according to one embodiment of the present invention.

圖13為本發明其中一實施例的電子元件量測設備的探針基板電性接觸受測基板之前的側視示意圖。 13 is a schematic side view of the probe substrate of the electronic component measuring equipment before electrical contact with the substrate under test according to one embodiment of the present invention.

圖14為本發明其中一實施例的電子元件量測設備的探針基板電性接觸受測基板之後的側視示意圖。 14 is a schematic side view of the probe substrate of the electronic component measuring equipment according to one embodiment of the present invention after it is electrically in contact with the substrate under test.

圖15為本發明其中一實施例的每一控制晶片電性連接於相對應的導電電極組與相對應的導電探針群組之間的功能方塊圖。 FIG. 15 is a functional block diagram of each control chip electrically connected between the corresponding conductive electrode group and the corresponding conductive probe group according to one embodiment of the present invention.

圖16為本發明其中一實施例電子元件量測設備的系統架構示意 圖。 Figure 16 is a schematic diagram of the system architecture of an electronic component measuring device according to one embodiment of the present invention. Figure.

圖17為本發明其中一實施例電子元件量測設備的系統架構示意圖。 FIG. 17 is a schematic system architecture diagram of an electronic component measuring device according to one embodiment of the present invention.

圖18為本發明其中一實施例的探針基板的俯視示意圖。 Figure 18 is a schematic top view of a probe substrate according to one embodiment of the present invention.

圖19為本發明其中一實施例電子元件量測設備的系統架構示意圖。 FIG. 19 is a schematic system architecture diagram of an electronic component measuring device according to one embodiment of the present invention.

圖20為本發明其中一實施例電子元件量測設備的系統架構示意圖。 FIG. 20 is a schematic system architecture diagram of an electronic component measuring device according to one embodiment of the present invention.

圖21為本發明另外一實施例的探針基板的俯視示意圖。 FIG. 21 is a schematic top view of a probe substrate according to another embodiment of the present invention.

圖22為本發明另外一實施例的探針基板的側視示意圖。 Figure 22 is a schematic side view of a probe substrate according to another embodiment of the present invention.

圖23為本發明另外一實施例的電子元件量測設備的探針基板電性接觸受測基板之後的側視示意圖。 23 is a schematic side view of an electronic component measuring device according to another embodiment of the present invention after the probe substrate electrically contacts the substrate under test.

圖24為本發明實施例之電子元件量測方法步驟流程示意圖。 FIG. 24 is a schematic flowchart of steps of an electronic component measurement method according to an embodiment of the present invention.

圖25為本發明另外一實施例之電子元件量測方法步驟流程示意圖。 FIG. 25 is a schematic flowchart of the steps of an electronic component measurement method according to another embodiment of the present invention.

以下是通過特定的具體實施例來說明本發明所公開有關“電子元件量測設備及電子元件量測方法”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以實行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不背離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。 另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。 The following is a description of the implementation of the "electronic component measurement equipment and electronic component measurement method" disclosed in the present invention through specific embodiments. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. . The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only simple schematic illustrations and are not depictions based on actual dimensions, as is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the scope of the present invention. In addition, the term "or" used in this article shall include any one or combination of more of the associated listed items depending on the actual situation.

參閱圖1至圖15所示,本發明提供一種電子元件量測設備Z1,其包括:一第二承載平台M1、一第一承載平台M2以及一光學量測元件M3。第二承載平台M1用於承載一受測基板S,並且受測基板S上係置放有多數個待測電子元件C。第一承載平台M2設置在第二承載平台M1的上方,並且第一承載平台M2包括一探針基板1以及設置在探針基板1上的多數個探針對2。光學量測元件M3設置在第二承載平台M1的下方,以用於對多數個待測電子元件C進行光學檢測。藉此,待測電子元件C能透過相對應的探針對2所提供的電力而產生光源L,並且待測電子元件C所產生的光源L能透過光學量測元件M3以進行光學檢測。 Referring to FIGS. 1 to 15 , the present invention provides an electronic component measuring device Z1, which includes: a second carrying platform M1, a first carrying platform M2 and an optical measuring element M3. The second carrying platform M1 is used to carry a substrate S under test, and a plurality of electronic components C under test are placed on the substrate S under test. The first carrying platform M2 is disposed above the second carrying platform M1 , and the first carrying platform M2 includes a probe substrate 1 and a plurality of probe pairs 2 provided on the probe substrate 1 . The optical measurement element M3 is disposed below the second carrying platform M1 for optical detection of a plurality of electronic components C to be tested. Thereby, the electronic component C to be tested can generate the light source L through the power provided by the corresponding probe pair 2, and the light source L generated by the electronic component C to be tested can pass through the optical measurement element M3 for optical detection.

[實施例] [Example]

參閱圖1至圖10所示,本發明實施例提供一種探針基板1的製作方法。舉例來說,探針基板1的製作方法可以包括下列步驟:首先,配合圖1與圖2所示,可以透過半導體製程(例如塗佈、蒸鍍、濺鍍)或者非半導體製程,形成一第一材料層R1於一晶圓材料W上,其中第一材料層R1可以是環氧樹酯(epoxy)或者光阻(photoresist)等高分子材料(也可以是SiOx或者SiNx等無機材料,或者是任何的彈性材料或者非彈性材料,或者是任何的導電材料或者非導電材料),並且晶圓材料W可以是藍寶石、石英、玻璃、矽等半導體材料;接著,配合圖1至圖4所示,可以透過半導體製程(例如曝光、顯影)或者非半導體製程,移除一部分的第一材料層R1,以在晶圓材料W上形成多個第一柱體211、多個第二柱體221以及多個第二對位記號B2;然後,配合圖5與圖6所示,可以透過半導體製程(例如塗佈、蒸鍍、濺鍍)或者非半導體製程,形成一第二材料層R2於晶圓材料W上,以覆蓋多個第一柱體211、多個第二柱體221以 及多個第二對位記號B2;接下來,配合圖5至圖8所示,可以透過半導體製程(例如曝光、顯影)或者非半導體製程,圖案化第二材料層R2,以形成一探針基板1。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。 Referring to FIGS. 1 to 10 , an embodiment of the present invention provides a method for manufacturing a probe substrate 1 . For example, the manufacturing method of the probe substrate 1 may include the following steps: First, as shown in FIGS. 1 and 2 , a first semiconductor process (such as coating, evaporation, sputtering) or non-semiconductor process may be used to form a first. A material layer R1 is on a wafer material W, where the first material layer R1 can be a polymer material such as epoxy or photoresist (it can also be an inorganic material such as SiOx or SiNx, or Any elastic material or inelastic material, or any conductive material or non-conductive material), and the wafer material W can be sapphire, quartz, glass, silicon and other semiconductor materials; then, as shown in Figures 1 to 4, A portion of the first material layer R1 may be removed through a semiconductor process (such as exposure, development) or a non-semiconductor process to form a plurality of first pillars 211, a plurality of second pillars 221 and multiple pillars on the wafer material W. A second alignment mark B2; then, as shown in Figures 5 and 6, a second material layer R2 can be formed on the wafer material through a semiconductor process (such as coating, evaporation, sputtering) or a non-semiconductor process. above, to cover the plurality of first cylinders 211, the plurality of second cylinders 221 and and a plurality of second alignment marks B2; next, as shown in Figures 5 to 8, the second material layer R2 can be patterned through a semiconductor process (such as exposure, development) or a non-semiconductor process to form a probe. Substrate 1. However, the above examples are only one of the possible embodiments and are not intended to limit the present invention.

參閱圖16所示,本發明實施例提供一種電子元件量測設備Z1,其包括:一第一承載平台M2、一第二承載平台M1、一光學量測元件M3、一致動裝置E1以及一電流輸出模組C1。致動裝置E1與第一承載平台M2以及第二承載平台M1電性連接,其係用於控制第一承載平台M2與第二承載平台M1之間的相對位置,使第一承載平台M2與第二承載平台M1相互靠近以接觸及對位。電流輸出模組C1係用以提供電流至第一承載平台M2。在一實施例中,電流輸出模組C1係輸出一定電流。在一實施例中,定電流為20μA至20mA。 Referring to FIG. 16 , an embodiment of the present invention provides an electronic component measuring equipment Z1, which includes: a first carrying platform M2, a second carrying platform M1, an optical measuring element M3, an actuating device E1 and a current Output module C1. The actuating device E1 is electrically connected to the first bearing platform M2 and the second bearing platform M1, and is used to control the relative position between the first bearing platform M2 and the second bearing platform M1, so that the first bearing platform M2 and the second bearing platform M1 are electrically connected. The two carrying platforms M1 are close to each other for contact and alignment. The current output module C1 is used to provide current to the first carrying platform M2. In one embodiment, the current output module C1 outputs a certain current. In one embodiment, the constant current is 20 μA to 20 mA.

首先,配合圖11至圖13所示,第二承載平台M1能用於承載一受測基板S,並且受測基板S上係置放有多數個待測電子元件C(多數個待測電子元件C尚未從受測基板S上分離,並且也尚未被任何封裝材料所封裝,例如為裸晶片)。舉例來說,第二承載平台M1與受測基板S都具有透光區域,並且待測電子元件C為尚未封裝完成的裸晶片。另外,當待測電子元件C可為一水平式晶片時,每一待測電子元件C可以包括一第一導電接點C101以及一第二導電接點C102。然而,本發明不以上述所舉的例子為限。 First, as shown in FIGS. 11 to 13 , the second carrying platform M1 can be used to carry a substrate S under test, and a plurality of electronic components to be tested C (a plurality of electronic components to be tested) are placed on the substrate S to be tested. C has not been separated from the substrate S under test, and has not been encapsulated by any packaging material, such as a bare chip). For example, the second carrying platform M1 and the substrate under test S both have light-transmitting areas, and the electronic component C under test is a bare chip that has not yet been packaged. In addition, when the electronic component C to be tested may be a horizontal wafer, each electronic component C to be tested may include a first conductive contact C101 and a second conductive contact C102. However, the present invention is not limited to the above examples.

再者,配合圖7至圖10、圖13以及圖14所示,第一承載平台M2可移動地設置在第二承載平台M1的上方,並且第一承載平台M2包括一探針基板1以及設置在探針基板1上的多數個探針對2。在一實施例中,探針基板1與受測基板S的大小可以是相同或者相異,並且每一探針對2可以包括一第一導電接觸腳21以及一第二導電接觸腳22。然而,本發明不以上述所舉的例子為限。 Furthermore, as shown in FIGS. 7 to 10 , 13 and 14 , the first carrying platform M2 is movably disposed above the second carrying platform M1 , and the first carrying platform M2 includes a probe substrate 1 and a A plurality of probe pairs 2 on the probe substrate 1 . In one embodiment, the size of the probe substrate 1 and the substrate under test S may be the same or different, and each probe pair 2 may include a first conductive contact pin 21 and a second conductive contact pin 22 . However, the present invention is not limited to the above examples.

另外,配合圖13與圖14所示,光學量測元件M3設置在第二承載 平台M1的下方,以用於對多數個待測電子元件C的至少一個進行光學檢測。舉例來說,光學量測元件M3可以是具有影像感測功能的任何影像擷取裝置,然而本發明不以上述所舉的例子為限。藉此,如圖14所示,當第一承載平台M2以及第二承載平台M1藉由圖16的致動裝置E1而彼此靠近且接觸,且每一探針對2的第一導電接觸腳21與第二導電接觸腳22分別電性接觸相對應的待測電子元件C的第一導電接點C101與第二導電接點C102時,待測電子元件C就能與相對應的探針對2建立待測迴路,並藉由通過相對應的探針對2的電力而產生光源L,並且待測電子元件C所產生的光源L就能透過光學量測元件M3以進行光學檢測,藉此以將品質良好的待測電子元件與品質不良的待測電子元件篩選出來。舉例來說,光學檢測可以包括有發光檢測(檢測待測電子元件C是否有產生光源L)、亮度檢測(檢測待測電子元件C所產生的光源L的亮度)、波長檢測、以及色座標檢測(檢測待測電子元件C所產生的光源L在色度座標圖上的分布)。 In addition, as shown in Figure 13 and Figure 14, the optical measurement element M3 is arranged on the second carrier Below the platform M1, it is used for optical inspection of at least one of the plurality of electronic components C to be tested. For example, the optical measuring element M3 can be any image capturing device with an image sensing function, but the present invention is not limited to the above examples. Thereby, as shown in FIG. 14 , when the first carrying platform M2 and the second carrying platform M1 are close to and in contact with each other through the actuating device E1 of FIG. 16 , and the first conductive contact pin 21 of each probe pair 2 and When the second conductive contact pins 22 electrically contact the first conductive contact C101 and the second conductive contact C102 of the corresponding electronic component C to be tested respectively, the electronic component C to be tested can establish a standby relationship with the corresponding probe pair 2. The test loop is used to generate the light source L by the power passing through the corresponding probe pair 2, and the light source L generated by the electronic component C to be tested can pass through the optical measurement element M3 for optical detection, thereby ensuring good quality. The electronic components to be tested and the electronic components to be tested with poor quality are screened out. For example, optical detection may include luminescence detection (detecting whether the electronic component C to be tested produces a light source L), brightness detection (detecting the brightness of the light source L generated by the electronic component C to be tested), wavelength detection, and color coordinate detection. (Detect the distribution of the light source L generated by the electronic component C under test on the chromaticity coordinate diagram).

舉例來說,配合圖7與圖8所示,第一導電接觸腳21包括設置在探針基板1上的一第一柱體211以及覆蓋第一柱體211的一第一導電層212,並且第二導電接觸腳22包括設置在探針基板1上的一第二柱體221以及覆蓋第二柱體221的一第二導電層222。另外,探針基板1包括多個第一導電線路101以及分別與多個第一導電線路101彼此分離的多個第二導電線路102。每一第一導電線路101可電性連接於相對應的第一導電接觸腳21的第一導電層212,並且每一第二導電線路102電性連接於相對應的第二導電接觸腳22的第二導電層222。然而,本發明不以上述所舉的例子為限。 For example, as shown in FIGS. 7 and 8 , the first conductive contact pin 21 includes a first pillar 211 disposed on the probe substrate 1 and a first conductive layer 212 covering the first pillar 211 , and The second conductive contact pin 22 includes a second pillar 221 disposed on the probe substrate 1 and a second conductive layer 222 covering the second pillar 221 . In addition, the probe substrate 1 includes a plurality of first conductive lines 101 and a plurality of second conductive lines 102 that are respectively separated from the plurality of first conductive lines 101. Each first conductive line 101 is electrically connected to the first conductive layer 212 of the corresponding first conductive contact pin 21, and each second conductive line 102 is electrically connected to the corresponding second conductive contact pin 22. Second conductive layer 222. However, the present invention is not limited to the above examples.

舉例來說,配合圖7與圖8所示,多數個探針對2可以被區分成多個導電探針群組2G,並且每一導電探針群組2G包括至少兩個探針對2(例如,圖7顯示最上面的導電探針群組2G包括有3個探針對2)。另外,探針基板1包 括分別電性連接於多個導電探針群組2G的多個導電電極組P,並且每一導電電極組P包括一第一導電電極P1以及一第二導電電極P2。此外,每一導電探針群組2G的每一探針對2的第一導電接觸腳21的第一導電層212能透過相對應的第一導電線路101,以電性連接於(或者電性接觸)相對應的導電電極組P的第一導電電極P1。每一導電探針群組2G的每一探針對2的第二導電接觸腳22的第二導電層222能透過相對應的第二導電線路102,以電性連接於(或者電性接觸)相對應的導電電極組P的第二導電電極P2。然而,本發明不以上述所舉的例子為限。 For example, as shown in FIGS. 7 and 8 , a plurality of probe pairs 2 can be divided into a plurality of conductive probe groups 2G, and each conductive probe group 2G includes at least two probe pairs 2 (for example, Figure 7 shows that the top conductive probe group 2G includes 3 probe pairs 2). In addition, probe substrate 1 pack It includes a plurality of conductive electrode groups P electrically connected to a plurality of conductive probe groups 2G respectively, and each conductive electrode group P includes a first conductive electrode P1 and a second conductive electrode P2. In addition, the first conductive layer 212 of the first conductive contact pins 21 of each probe pair 2 of each conductive probe group 2G can be electrically connected to (or electrically contacted with) through the corresponding first conductive line 101 ) corresponding to the first conductive electrode P1 of the conductive electrode group P. The second conductive layer 222 of the second conductive contact pins 22 of each probe pair 2 of each conductive probe group 2G can be electrically connected to (or electrically contacted with) the phase through the corresponding second conductive line 102. The corresponding second conductive electrode P2 of the conductive electrode group P. However, the present invention is not limited to the above examples.

舉例來說,配合圖7、圖9與圖10所示,探針基板1進一步包括電性連接於多個第一導電電極P1的一第一總導電電極T1以及電性連接於多個第二導電電極P2的一第二總導電電極T2。另外,第一總導電電極T1能透過多個第一導電電極P1,以電性連接於每一導電探針群組2G的每一探針對2的第一導電接觸腳21的第一導電層212,並且第二總導電電極T2能透過多個第二導電電極P2,以電性連接於每一導電探針群組2G的每一探針對2的第二導電接觸腳22的第二導電層222。藉此,第一總導電電極T1以及第二總導電電極T2可將來自電流輸出模組C1的電流提供至對應的探針對2。 For example, as shown in FIGS. 7 , 9 and 10 , the probe substrate 1 further includes a first total conductive electrode T1 electrically connected to a plurality of first conductive electrodes P1 and a plurality of second conductive electrodes P1 . A second overall conductive electrode T2 of the conductive electrode P2. In addition, the first total conductive electrode T1 can be electrically connected to the first conductive layer 212 of the first conductive contact pin 21 of each probe pair 2 of each conductive probe group 2G through the plurality of first conductive electrodes P1 , and the second total conductive electrode T2 can be electrically connected to the second conductive layer 222 of the second conductive contact pin 22 of each probe pair 2 of each conductive probe group 2G through the plurality of second conductive electrodes P2 . Thereby, the first total conductive electrode T1 and the second total conductive electrode T2 can provide the current from the current output module C1 to the corresponding probe pair 2 .

值得注意的是,配合圖7與圖11所示,受測基板S包括多個第一對位記號B1,並且探針基板1包括分別對應於多個第一對位記號B1的多個第二對位記號B2。藉此,本發明能透過多個第一對位記號B1與多個第二對位記號B2的相互對位,以使得每一探針對2的第一導電接觸腳21與第二導電接觸腳22能準確地分別電性接觸相對應的待測電子元件C的第一導電接點C101與第二導電接點C102(如圖13與圖14所示),以降低探針對2與待測電子元件C相互錯位的可能性。 It is worth noting that, as shown in FIGS. 7 and 11 , the substrate S under test includes a plurality of first alignment marks B1 , and the probe substrate 1 includes a plurality of second alignment marks B1 respectively corresponding to the plurality of first alignment marks B1 . Counterpoint mark B2. Thereby, the present invention can align the first conductive contact pins 21 and the second conductive contact pins 22 of each probe pair 2 through the mutual alignment of the plurality of first alignment marks B1 and the plurality of second alignment marks B2. Can accurately electrically contact the first conductive contact C101 and the second conductive contact C102 of the corresponding electronic component C under test (as shown in Figures 13 and 14), so as to reduce the contact between the probe pair 2 and the electronic component under test C possibility of mutual misalignment.

值得注意的是,如圖15所示,當多數個探針對2被區分成多個導 電探針群組2G時(可以被區分成多個矩形區域),第一承載平台M2可進一步包括分別電性連接於多個導電探針群組2G的多個控制晶片3,並且探針基板1包括分別電性連接於多個控制晶片3的多個導電電極組P。舉例來說,當控制晶片3為一限流晶片時,透過限流晶片對於電流量的控制,以使得同一個導電探針群組2G的多數個探針對2能分別提供固定的電流給相對應多數個待測電子元件C(相對應其中一導電探針群組2G的一待測電子元件區域)。因此,當相對應多數個待測電子元件C透過同一個導電探針群組2G的多數個探針對2所提供的固定電流而產生光源時,相對應多數個待測電子元件C所產生的光源就能透過光學量測元件M3以進行光學檢測,以使得位於同一待測電子元件區域的多數個待測電子元件C能依據發光品質來進行分類處理。 It is worth noting that, as shown in Figure 15, when multiple probe pairs 2 are divided into multiple leads When the electrical probe group 2G (can be divided into a plurality of rectangular areas), the first carrying platform M2 may further include a plurality of control chips 3 electrically connected to the plurality of conductive probe groups 2G, and the probe substrate 1 includes a plurality of conductive electrode groups P electrically connected to a plurality of control chips 3 respectively. For example, when the control chip 3 is a current limiting chip, the current limiting chip controls the amount of current, so that multiple probe pairs 2 of the same conductive probe group 2G can respectively provide fixed currents to the corresponding probes. A plurality of electronic components to be tested C (corresponding to an electronic component to be tested area of one of the conductive probe groups 2G). Therefore, when a plurality of corresponding electronic components C under test generate light sources through fixed currents provided by a plurality of probe pairs 2 of the same conductive probe group 2G, the corresponding plurality of electronic components C under test generate light sources. Optical detection can be performed through the optical measuring element M3, so that a plurality of electronic components to be tested C located in the same area of the electronic component to be tested can be classified according to the luminous quality.

值得注意的是,第一承載平台M2的第一總導電電極T1、第二總導電電極T2、多個導電電極組P、多個第一導電線路101、多個第二導電線路102以及多個第二對位記號B2都會被一絕緣保護層(圖未示)所覆蓋,而每一探針對2的第一導電接觸腳21與第二導電接觸腳22不被絕緣保護層所覆蓋。 It is worth noting that the first total conductive electrode T1, the second total conductive electrode T2, a plurality of conductive electrode groups P, a plurality of first conductive lines 101, a plurality of second conductive lines 102 and a plurality of The second alignment mark B2 will be covered by an insulating protective layer (not shown), and the first conductive contact pin 21 and the second conductive contact pin 22 of each probe pair 2 are not covered by the insulating protective layer.

請參閱圖17至圖18所示,本發明實施例提供另一種電子元件量測設備Z2,在本實施例中,電子元件量測設備Z2更進一步包括了一切換裝置S1,其中,切換裝置S1與電流輸出模組C1以及第一承載平台M2電性連接,用以切換電流輸出模組C1所提供之定電流至第一承載平台M2上不同的探針對2。 Referring to Figures 17 and 18, an embodiment of the present invention provides another electronic component measuring equipment Z2. In this embodiment, the electronic component measuring equipment Z2 further includes a switching device S1, wherein the switching device S1 It is electrically connected to the current output module C1 and the first carrying platform M2, and is used to switch the constant current provided by the current output module C1 to different probe pairs 2 on the first carrying platform M2.

在一實施例中,切換裝置S1例如可以切換開關或多通道電路切換盒來實現,但本發明不以此為限制。 In one embodiment, the switching device S1 can be implemented by, for example, a switching switch or a multi-channel circuit switching box, but the invention is not limited thereto.

在此實施例中,探針基板1的多數個探針對2可以被區分成多個導電探針群組2G,並且每一導電探針群組2G包括至少兩個探針對2(例如,圖18顯示最上面的導電探針群組2G包括有5個探針對2)。另外,探針基板1包括 分別電性連接於多數個導電探針群組2G的第一導電電極組PG1以及第二導電電極組PG2,第一導電電極組PG1包括多數個第一導電電極P1,第二導電電極組PG2包括多數個第二導電電極P2,多數個第一導電電極P1彼此不電性連接,多數個第二導電電極P2彼此不電性連接,且同一導電探針群組2G中的多數個探針對2與同一個第一導電電極P1電性連接,且同一導電探針群組2G中多數個探針對2與不同的第二導電電極P2電性連接。 In this embodiment, the plurality of probe pairs 2 of the probe substrate 1 may be divided into a plurality of conductive probe groups 2G, and each conductive probe group 2G includes at least two probe pairs 2 (for example, FIG. 18 The top conductive probe group 2G shown includes 5 probe pairs 2). In addition, the probe substrate 1 includes The first conductive electrode group PG1 and the second conductive electrode group PG2 are respectively electrically connected to the plurality of conductive probe groups 2G. The first conductive electrode group PG1 includes a plurality of first conductive electrodes P1, and the second conductive electrode group PG2 includes A plurality of second conductive electrodes P2, a plurality of first conductive electrodes P1 are not electrically connected to each other, a plurality of second conductive electrodes P2 are not electrically connected to each other, and a plurality of probe pairs 2 in the same conductive probe group 2G are not electrically connected to each other. The same first conductive electrode P1 is electrically connected, and a plurality of probe pairs 2 in the same conductive probe group 2G are electrically connected to different second conductive electrodes P2.

因此,在此實施例中,根據切換裝置S1的控制,在同一時間點,至少一個第一導電電極P1以及至少一個第一導電電極P2將同時提供電力至對應的探針對2,使探針基板1的多數個探針對2可同時有一個探針對2或複數個探針對2接收電力而以進行前述之光學檢測。 Therefore, in this embodiment, according to the control of the switching device S1, at the same point in time, at least one first conductive electrode P1 and at least one first conductive electrode P2 will simultaneously provide power to the corresponding probe pair 2, so that the probe substrate Among the plurality of probe pairs 2 of 1, one probe pair 2 or a plurality of probe pairs 2 can receive power at the same time to perform the aforementioned optical detection.

參閱圖19所示,本發明實施例提供另一種電子元件量測設備Z3,在此實施例中,電子元件量測設備Z3更包括一電壓輸出模組V1、一電壓量測元件VD1以及一運算裝置D,其中,電壓輸出模組V1與第一承載平台M2電性連接,用以提供一定電壓至第一承載平台M2。電壓量測單元VD1與第一承載平台M2電性連接,用於量測第二承載平台M1所承載之受測基板S上的待測電子元件C所形成的電壓。運算裝置D用以接收電壓量測單元VD1所量測的電壓,以計算出待測電子元件C的驅動電壓。 Referring to FIG. 19 , an embodiment of the present invention provides another electronic component measuring device Z3. In this embodiment, the electronic component measuring device Z3 further includes a voltage output module V1, a voltage measuring element VD1 and a computing unit. Device D, in which the voltage output module V1 is electrically connected to the first carrying platform M2 to provide a certain voltage to the first carrying platform M2. The voltage measurement unit VD1 is electrically connected to the first carrying platform M2 and is used to measure the voltage formed by the electronic component C under test on the substrate S under test carried by the second carrying platform M1. The computing device D is used to receive the voltage measured by the voltage measurement unit VD1 to calculate the driving voltage of the electronic component C under test.

進一步地,請同時參考圖18以及圖19。在此實施例中,在同一時間,只有一個第一導電電極P1以及一個第二導電電極P2能提供電力至相對應的待測電子元件C以建立導電迴路。 Further, please refer to Figure 18 and Figure 19 at the same time. In this embodiment, at the same time, only one first conductive electrode P1 and one second conductive electrode P2 can provide power to the corresponding electronic component C under test to establish a conductive loop.

藉此,如圖14所示,當第一承載平台M2以及第二承載平台M1藉由致動裝置E1而彼此靠近且接觸,且每一探針對2的第一導電接觸腳21與第二導電接觸腳22分別電性接觸相對應的待測電子元件C的第一導電接點C101與第二導電接點C102時,多數個待測電子元件C就能與相對應的探針對2建立待 測迴路,且其中一個探針對2將提供的電力傳遞至相對應的待測電子元件C而將使得待測迴路成為導電迴路,待測電子元件C產生光源L,並且待測電子元件C所產生的光源L就能透過光學量測元件M3以進行光學檢測。同時,電壓量測單元VD1(如圖19所示)量測導電迴路所產生的驅動電壓,並將驅動電壓提供至運算裝置D。 Thereby, as shown in FIG. 14 , when the first carrying platform M2 and the second carrying platform M1 are close to and in contact with each other through the actuating device E1 , and the first conductive contact pin 21 and the second conductive contact pin 21 of each probe pair 2 When the contact pins 22 electrically contact the first conductive contact C101 and the second conductive contact C102 of the corresponding electronic component C under test respectively, a plurality of electronic components C under test can establish contact with the corresponding probe pair 2. The circuit under test, and one of the probe pairs 2 will transfer the provided power to the corresponding electronic component under test C, which will make the circuit under test become a conductive circuit, the electronic component under test C generates the light source L, and the electronic component under test C generates The light source L can pass through the optical measuring element M3 for optical detection. At the same time, the voltage measurement unit VD1 (shown in FIG. 19 ) measures the driving voltage generated by the conductive circuit and provides the driving voltage to the computing device D.

在一實施例中,電壓量測單元VD1量測與待測電子元件C建立導電迴路的第一導電電極P1以及第二導電電極P2之間的跨壓來得到驅動電壓。舉例來說,電壓量測單元VD1量測接收定電流的第一導電電極P1或第二導電電極P2的電壓值來得到驅動電壓。 In one embodiment, the voltage measurement unit VD1 measures the voltage across the first conductive electrode P1 and the second conductive electrode P2 that establishes a conductive loop with the electronic component C under test to obtain the driving voltage. For example, the voltage measurement unit VD1 measures the voltage value of the first conductive electrode P1 or the second conductive electrode P2 that receives a constant current to obtain the driving voltage.

在一實施例中,待測電子元件C例如為已知電阻值之電阻元件。 In one embodiment, the electronic component C to be tested is, for example, a resistor component with a known resistance value.

在一實施例中,已知電阻值之電子元件的電阻值係大於0歐姆(Ω)且小於等於100歐姆(Ω)。例如已知電阻值之電子元件的電阻值係0.0001歐姆(Ω)至100歐姆(Ω)之間,但本發明不以此為限制。 In one embodiment, the resistance value of the electronic component with a known resistance value is greater than 0 ohms (Ω) and less than or equal to 100 ohms (Ω). For example, the resistance value of an electronic component with a known resistance value is between 0.0001 ohm (Ω) and 100 ohm (Ω), but the present invention is not limited to this.

因此,在待測電子元件C為已知電阻值之電阻元件的實施例中,多個電阻元件的其中一者可與相對應的探針對2建立第一導電迴路。同時,電壓量測單元VD1量測第一導電迴路所產生的第一驅動電壓,並將第一驅動電壓提供至運算裝置D。藉此,運算裝置D可得到每一電阻元件所產生的第一驅動電壓。 Therefore, in an embodiment in which the electronic component C to be tested is a resistive component with a known resistance value, one of the plurality of resistive components can establish a first conductive loop with the corresponding probe pair 2 . At the same time, the voltage measurement unit VD1 measures the first driving voltage generated by the first conductive loop and provides the first driving voltage to the computing device D. Thereby, the computing device D can obtain the first driving voltage generated by each resistive element.

在一實施例中,待測電子元件C例如為發光二極體。 In one embodiment, the electronic component C to be tested is, for example, a light-emitting diode.

因此,在待測電子元件C為發光二極體的實施例中,多個發光二極體的其中一者就能與相對應的探針對2建立第二導電迴路,其中,上述之第一導電迴路與第二導電迴路彼此可具有對應關係,即第一導電迴路與第二導電迴路係由相同的探針對2所建立的導電迴路。多個發光二極體的其中一者透過相對應的探針對2所提供的電力而產生光源L,並且發光二極體所產生的光 源L就能透過光學量測元件M3以進行光學檢測。同時,電壓量測單元VD1量測第二導電迴路所產生的第二驅動電壓,並將第二驅動電壓提供至運算裝置D。藉此,運算裝置D可得到每一發光二極體所產生的第二驅動電壓。 Therefore, in the embodiment where the electronic component C to be tested is a light-emitting diode, one of the plurality of light-emitting diodes can establish a second conductive loop with the corresponding probe pair 2, wherein the above-mentioned first conductive circuit The loop and the second conductive loop may have a corresponding relationship with each other, that is, the first conductive loop and the second conductive loop are conductive loops established by the same pair of probes 2 . One of the plurality of light-emitting diodes generates a light source L through the power provided by the corresponding probe pair 2, and the light generated by the light-emitting diodes The source L can pass through the optical measuring element M3 for optical detection. At the same time, the voltage measurement unit VD1 measures the second driving voltage generated by the second conductive loop and provides the second driving voltage to the computing device D. Thereby, the computing device D can obtain the second driving voltage generated by each light-emitting diode.

由於第一驅動電壓與第二驅動電壓是由同一探針對2所形成的線路來量測所得,此外第一驅動電壓是由已知電阻值之電阻元件所產生,因此可由第一驅動電壓與第二驅動電壓之間的電壓差得到發光二極體本身的驅動電壓。故,在上述實施例中,運算裝置D可藉由計算相對應的第一驅動電壓與第二驅動電壓之間的電壓差來得到發光二極體本身的驅動電壓。同時,由於第一驅動電壓與第二驅動電壓是由同一探針對2所形成的線路來量測所得,因此線路上的電性狀態(走線阻值、製程變異)將不影響發光二極體的驅動電壓的量測結果,更增進發光二極體的驅動電壓量測的正確性。 Since the first driving voltage and the second driving voltage are measured by the line formed by the same probe pair 2, and the first driving voltage is generated by a resistive element with a known resistance value, the first driving voltage and the second driving voltage can be measured by The voltage difference between the two driving voltages is the driving voltage of the light-emitting diode itself. Therefore, in the above embodiment, the computing device D can obtain the driving voltage of the light-emitting diode itself by calculating the voltage difference between the corresponding first driving voltage and the second driving voltage. At the same time, since the first driving voltage and the second driving voltage are measured by the circuit formed by the same probe pair 2, the electrical state (wiring resistance, process variation) on the circuit will not affect the light-emitting diode. The measurement result of the driving voltage further improves the accuracy of the measurement of the driving voltage of the light-emitting diode.

在一實施例中,運算裝置D例如為電腦伺服器,但本發明不以此為限制。 In one embodiment, the computing device D is, for example, a computer server, but the invention is not limited to this.

參閱圖20所示,本發明實施例提供另一種電子元件量測設備Z4,在此實施例中,電子元件量測設備Z4更包括一影像處理裝置IP,其配置於第一承載平台M2,用以取得包括第一對位記號B1以及第二對位記號B2的影像(如圖7以及圖11所示),並藉由影像比對進行第一承載平台M2與第二承載平台M1之間的對位控制,使第一承載平台M2所承載之探針基板1上的探針對2與第二承載平台M1所承載之受測基板S上的待測電子元件C準確對位(如圖13所示)。 Referring to FIG. 20 , an embodiment of the present invention provides another electronic component measuring equipment Z4. In this embodiment, the electronic component measuring equipment Z4 further includes an image processing device IP, which is configured on the first carrying platform M2. To obtain images including the first alignment mark B1 and the second alignment mark B2 (as shown in Figures 7 and 11), and perform image comparison between the first bearing platform M2 and the second bearing platform M1 Alignment control enables accurate alignment of the probe pair 2 on the probe substrate 1 carried by the first carrying platform M2 and the electronic component under test C on the tested substrate S carried by the second carrying platform M1 (as shown in Figure 13 Show).

在一實施例中,影像處理裝置IP例如為光學影像對位系統,但本發明不以此為限制。 In one embodiment, the image processing device IP is, for example, an optical image alignment system, but the invention is not limited to this.

值得一提的是,配合圖8、圖21以及圖22所示,在圖案化第二材料層R2以形成如圖8所示的探針基板1的步驟後,探針基板1的製作方法可以進 一步包括:可以透過印刷、塗佈、蒸鍍、濺鍍、含浸等方式,將具有彈性緩衝效果的導電材料(例如奈米銀、銀漿、導電UV膠)形成在多個第一導電層212與多個第二導電層222上。舉例來說,導電材料覆蓋在第一導電層212的一頂端上,以形成具有彈性緩衝效果的一第一彈性接觸層213,並且導電材料覆蓋在第二導電層222的一頂端上,以形成具有彈性緩衝效果的一第二彈性接觸層223。藉此,如圖23所示,當每一探針對2的第一導電接觸腳21與第二導電接觸腳22分別電性接觸相對應的待測電子元件C的第一導電接點C101與第二導電接點C102時,由於第一導電接觸腳21的第一彈性接觸層213與第二導電接觸腳22的第二彈性接觸層223會分別直接接觸相對應的待測電子元件C的第一導電接點C101與第二導電接點C102,所以第一導電接觸腳21對第一導電接點C101的撞擊程度或者磨耗程度能夠透過第一彈性接觸層213的使用而降低,並且第二導電接觸腳22對第二導電接點C102的撞擊程度或者磨耗程度能夠透過第二彈性接觸層223的使用而降低,進而有效提升多數個探針對2的使用壽命。 It is worth mentioning that, as shown in Figures 8, 21 and 22, after the step of patterning the second material layer R2 to form the probe substrate 1 as shown in Figure 8, the method for manufacturing the probe substrate 1 can enter One step includes: forming conductive materials with elastic buffering effects (such as nanosilver, silver paste, conductive UV glue) on the plurality of first conductive layers 212 through printing, coating, evaporation, sputtering, impregnation, etc. and a plurality of second conductive layers 222 . For example, the conductive material covers a top end of the first conductive layer 212 to form a first elastic contact layer 213 with an elastic buffering effect, and the conductive material covers a top end of the second conductive layer 222 to form a first elastic contact layer 213 with elastic buffering effect. A second elastic contact layer 223 with elastic buffering effect. Thereby, as shown in FIG. 23 , when the first conductive contact pin 21 and the second conductive contact pin 22 of each probe pair 2 electrically contact the first conductive contact point C101 and the corresponding first conductive contact point C101 of the corresponding electronic component C to be tested. When the two conductive contacts C102 are connected, the first elastic contact layer 213 of the first conductive contact pin 21 and the second elastic contact layer 223 of the second conductive contact pin 22 will directly contact the corresponding first element of the electronic component C to be tested. The conductive contact C101 and the second conductive contact C102, so the impact degree or wear degree of the first conductive contact pin 21 on the first conductive contact C101 can be reduced through the use of the first elastic contact layer 213, and the second conductive contact The degree of impact or wear of the feet 22 on the second conductive contact C102 can be reduced through the use of the second elastic contact layer 223, thereby effectively increasing the service life of the plurality of probe pairs 2.

更進一步來說,配合圖22與圖23所示,第一導電接觸腳21包括部分地(或者完全地)覆蓋第一導電層212的一第一彈性接觸層213,以用於電性接觸相對應的待測電子元件C的第一導電接點C101。另外,第二導電接觸腳22包括部分地(或者完全地)覆蓋第二導電層222的一第二彈性接觸層223,以用於電性接觸相對應的待測電子元件C的第二導電接點C102。 Furthermore, as shown in FIGS. 22 and 23 , the first conductive contact pin 21 includes a first elastic contact layer 213 that partially (or completely) covers the first conductive layer 212 for electrical contact. The corresponding first conductive contact C101 of the electronic component C under test. In addition, the second conductive contact pin 22 includes a second elastic contact layer 223 that partially (or completely) covers the second conductive layer 222 for electrically contacting the corresponding second conductive contact of the electronic component C to be tested. Click C102.

更進一步來說,配合圖21與圖22所示,每一導電探針群組2G的每一探針對2的第一導電接觸腳21的第一彈性接觸層213能透過相對應的第一導電線路101,以電性連接於相對應的導電電極組P的第一導電電極P1。另外,每一導電探針群組2G的每一探針對2的第二導電接觸腳22的第二彈性接觸層223能透過相對應的第二導電線路102,以電性連接於相對應的導電電極組P的第二導電電極P2。 Furthermore, as shown in FIGS. 21 and 22 , the first elastic contact layer 213 of the first conductive contact pins 21 of each probe pair 2 of each conductive probe group 2G can pass through the corresponding first conductive contact layer 213 . The line 101 is electrically connected to the first conductive electrode P1 of the corresponding conductive electrode group P. In addition, the second elastic contact layer 223 of the second conductive contact pins 22 of each probe pair 2 of each conductive probe group 2G can be electrically connected to the corresponding conductive circuit through the corresponding second conductive line 102. The second conductive electrode P2 of the electrode group P.

更進一步來說,配合圖21與圖22所示,第一總導電電極T1能透過多個第一導電電極P1,以電性連接於每一導電探針群組2G的每一探針對2的第一導電接觸腳21的第一彈性接觸層213。另外,第二總導電電極T2能透過多個第二導電電極P2,以電性連接於每一導電探針群組2G的每一探針對2的第二導電接觸腳22的第二彈性接觸層223。也就是說,由於第一總導電電極T1可以同時電性連接於多個第一導電電極P1,所以第一承載平台M2可以透過第一總導電電極T1的使用,而同時對所有的多個第一導電接觸腳21提供電源。另外,由於第二總導電電極T2能同時電性連接於多個第二導電電極P2,所以第一承載平台M2可以透過第二總導電電極T2的使用,而同時對所有的多個第二導電接觸腳22提供電源。 Furthermore, as shown in FIGS. 21 and 22 , the first total conductive electrode T1 can be electrically connected to each probe pair 2 of each conductive probe group 2G through a plurality of first conductive electrodes P1 The first elastic contact layer 213 of the first conductive contact pin 21 . In addition, the second total conductive electrode T2 can be electrically connected to the second elastic contact layer of the second conductive contact pin 22 of each probe pair 2 of each conductive probe group 2G through the plurality of second conductive electrodes P2 223. That is to say, since the first total conductive electrode T1 can be electrically connected to multiple first conductive electrodes P1 at the same time, the first carrying platform M2 can simultaneously support all the plurality of first conductive electrodes P1 through the use of the first total conductive electrode T1. A conductive contact pin 21 provides power. In addition, since the second total conductive electrode T2 can be electrically connected to the plurality of second conductive electrodes P2 at the same time, the first carrying platform M2 can simultaneously connect all the plurality of second conductive electrodes P2 through the use of the second total conductive electrode T2. Contact pin 22 provides power.

由本發明的上述較佳實施例及應用方式可歸納出一種電子元件量測方法,可以上述電子元件量測設備(Z1~Z4)來實現,如圖24所示,方法包括以下步驟:提供受測基板,受測基板上係置放有多數個待測電子元件(S110);使多數個待測電子元件藉由線路而形成多數個待測迴路(S130);線路例如為探針對2與第一導電電極P1及第二導電電極P2之間的待測迴路;提供定電流至多數個待測迴路之至少一者以形成導電迴路(S150);以及量測多數個待測電子元件之至少一者所產生之光訊號(S170)。 From the above-mentioned preferred embodiments and application methods of the present invention, an electronic component measurement method can be summarized, which can be implemented by the above-mentioned electronic component measurement equipment (Z1~Z4). As shown in Figure 24, the method includes the following steps: Provide the measured A plurality of electronic components to be tested are placed on the substrate to be tested (S110); a plurality of electronic components to be tested are formed through lines to form a plurality of circuits to be tested (S130); the lines are, for example, the probe pair 2 and the first A loop under test between the conductive electrode P1 and the second conductive electrode P2; providing a constant current to at least one of a plurality of circuits under test to form a conductive loop (S150); and measuring at least one of a plurality of electronic components under test The generated light signal (S170).

由本發明的上述較佳實施例及應用方式可歸納出另一種電子元件量測方法,可以上述電子元件量測設備(Z2~Z4)來實現,如圖25所示,方法包括以下步驟:提供受測基板,受測基板上係置放有多數個已知電阻值之電阻元件(S210); 使多數個已知電阻值之電阻元件藉由線路而形成多數個第一待測迴路(S230);提供定電流至多數個第一待測迴路之一者以形成第一導電迴路,於定電流下量測第一導電迴路的跨壓,而得到第一驅動電壓(S250);將多數個已知電阻值之電阻元件置換為多數個電子元件(S270);使多數個電子元件藉由線路而形成多數個第二待測迴路(S290);提供定電流至多數個第二待測迴路之一者以形成第二導電迴路,於定電流下量測電壓,而得到第二驅動電壓(S310);以及計算相對應的第一驅動電壓與第二驅動電壓之間的電壓差(S330)。 From the above-mentioned preferred embodiments and application methods of the present invention, another electronic component measurement method can be summarized, which can be implemented by the above-mentioned electronic component measurement equipment (Z2~Z4). As shown in Figure 25, the method includes the following steps: Provide the subject Test substrate, on which a plurality of resistive elements with known resistance values are placed (S210); Make a plurality of resistive elements with known resistance values pass through lines to form a plurality of first circuits to be measured (S230); provide a constant current to one of the plurality of first circuits to be measured to form a first conductive circuit. Measure the cross-voltage of the first conductive loop to obtain the first driving voltage (S250); replace a plurality of resistive elements with known resistance values with a plurality of electronic components (S270); enable the plurality of electronic components to be connected through the circuit Form a plurality of second circuits to be measured (S290); provide a constant current to one of the plurality of second circuits to be measured to form a second conductive circuit, measure the voltage under the constant current, and obtain the second driving voltage (S310) ; and calculate the voltage difference between the corresponding first driving voltage and the second driving voltage (S330).

在一實施例中,上述之電子元件為發光二極體,且發光二極體的製造方法包括上述之電子元件量測方法。 In one embodiment, the above-mentioned electronic component is a light-emitting diode, and the manufacturing method of the light-emitting diode includes the above-mentioned electronic component measurement method.

本發明所提供的一種電子元件量測設備,其能通過“第二承載平台用於承載一受測基板,受測基板包括多數個待測電子元件”、“第一承載平台設置在第二承載平台的上方,第一承載平台包括一探針基板以及設置在探針基板上的多數個探針對”以及“光學量測元件設置在第二承載平台的下方,以用於對多數個待測電子元件進行光學檢測”的技術方案,以使得待測電子元件能藉由通過相對應的探針對的電力而產生光源,並且待測電子元件所產生的光源能透過一光學量測元件以進行光學檢測,藉此以提升待測電子元件的光學檢測效率。 The invention provides an electronic component measuring equipment, which can use "a second carrying platform for carrying a tested substrate, and the tested substrate includes a plurality of electronic components to be tested", and "the first carrying platform is arranged on the second carrying platform." Above the platform, the first carrying platform includes a probe substrate and a plurality of probe pairs arranged on the probe substrate, and the optical measuring element is arranged below the second carrying platform for measuring a plurality of electrons to be measured. The technical solution of "Optical detection of components" enables the electronic component to be tested to generate a light source by passing the electricity through the corresponding probe pair, and the light source generated by the electronic component to be tested can pass through an optical measuring element for optical detection. , thereby improving the optical detection efficiency of the electronic components to be tested.

本發明所提供的一種電子元件量測設備,其能通過“多數個探針對設置在探針基板上”以及“每一探針對包括一第一導電接觸腳以及一第二導電接觸腳”的技術方案,以使得當每一探針對的第一導電接觸腳與第二導電接觸腳分別電性接觸相對應的一待測電子元件的一第一導電接點與一第 二導電接點時,待測電子元件能藉由通過相對應的探針對的電力而產生光源,並且待測電子元件所產生的光源能透過一光學量測元件以進行光學檢測,藉此以提升待測電子元件的光學檢測效率。 The invention provides an electronic component measuring equipment, which can adopt the technology of "a plurality of probe pairs are arranged on the probe substrate" and "each probe pair includes a first conductive contact pin and a second conductive contact pin" The solution is such that when the first conductive contact pin and the second conductive contact pin of each probe pair respectively electrically contact a first conductive contact and a first conductive contact of a corresponding electronic component to be tested, When there are two conductive contacts, the electronic component under test can generate a light source by passing the electricity through the corresponding probe pair, and the light source generated by the electronic component under test can pass through an optical measuring element for optical detection, thereby improving the Optical detection efficiency of electronic components under test.

本發明所提供的一種電子元件量測設備,其能藉由通過量測單一線路與不同電子元件所建立的導電迴路之跨壓,快速計算出與單一線路建立導電迴路的待測電子元件之驅動電壓,提升待測電子元件的電性檢測效率。 The invention provides an electronic component measuring device that can quickly calculate the drive of the electronic component under test that establishes a conductive loop with a single line by measuring the cross-voltage of a conductive loop established by a single line and different electronic components. voltage to improve the electrical detection efficiency of electronic components under test.

以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。 The contents disclosed above are only preferred and feasible embodiments of the present invention, and do not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.

Z1:電子元件量測設備 Z1: Electronic component measuring equipment

M1:第二承載平台 M1: Second carrying platform

M2:第一承載平台 M2: the first carrying platform

M3:光學量測元件 M3: Optical measuring element

S:受測基板 S: Tested substrate

C:待測電子元件 C: Electronic components to be tested

C101:第一導電接點 C101: First conductive contact

C102:第二導電接點 C102: Second conductive contact

1:探針基板 1: Probe substrate

2:探針對 2: Probe pair

21:第一導電接觸腳 21: First conductive contact pin

211:第一柱體 211:First cylinder

212:第一導電層 212: First conductive layer

22:第二導電接觸腳 22: Second conductive contact pin

221:第二柱體 221:Second cylinder

222:第二導電層 222: Second conductive layer

P:導電電極組 P: Conductive electrode group

P1:第一導電電極 P1: first conductive electrode

P2:第二導電電極 P2: Second conductive electrode

L:光源 L: light source

Claims (13)

一種電子元件量測設備,其包括:一第一承載平台,其係用於承載一探針基板,該探針基板上係設有多數個探針對;一第二承載平台,其係用於承載一受測基板,該受測基板上係置放有多數個待測電子元件;一致動裝置,其係用於使該第一承載平台與該第二承載平台相互靠近,以使該第一承載平台所承載之探針基板上至少部分的探針對分別與相對應的該第二承載平台所承載之受測基板上的待測電子元件接觸;一電流輸出模組,其係可提供一定電流至該第一承載平台所承載之探針基板,並經由該探針對使其與該探針對所接觸的待測電子元件間形成一導電迴路,而該待測電子元件係可藉由該導電迴路產生一光訊號;一切換裝置,其係可切換該電流輸出模組所提供之定電流至不同的探針對;以及一光學量測元件,其係用於量測該第二承載平台所承載之受測基板上的待測電子元件所產生的光訊號。 An electronic component measuring equipment, which includes: a first carrying platform, which is used to carry a probe substrate, the probe substrate is provided with a plurality of probe pairs; a second carrying platform, which is used to carry A substrate under test, on which a plurality of electronic components under test are placed; an actuating device, which is used to bring the first carrying platform and the second carrying platform close to each other, so that the first carrying platform At least some of the probe pairs on the probe substrate carried by the platform are in contact with the corresponding electronic components to be tested on the substrate under test carried by the second carrying platform; a current output module can provide a certain current to The probe substrate carried by the first carrying platform forms a conductive loop through the probe pair and the electronic component under test in contact with the probe pair, and the electronic component under test can be generated by the conductive loop. An optical signal; a switching device that can switch the constant current provided by the current output module to different probe pairs; and an optical measurement element that is used to measure the receptor carried by the second carrying platform. Measure the optical signal generated by the electronic component under test on the substrate. 如請求項1所述之電子元件量測設備,其中該電流輸出模組係輸出該定電流至該第一承載平台所承載之探針基板上的一個探針對,再由該切換裝置將該定電流輸出切換至另一個探針對。 The electronic component measuring equipment as described in claim 1, wherein the current output module outputs the constant current to a probe pair on the probe substrate carried by the first carrying platform, and then the switching device switches the constant current to a probe pair on the probe substrate carried by the first carrying platform. The current output switches to the other probe pair. 如請求項1所述之電子元件量測設備,其中該電流輸出模組係輸出該定電流至該第一承載平台所承載之探針基板上的一組探針對,再由該切換裝置將該定電流輸出切換至另一組探針對。 The electronic component measuring equipment as described in claim 1, wherein the current output module outputs the constant current to a group of probe pairs on the probe substrate carried by the first carrying platform, and then the switching device switches the The constant current output switches to another set of probe pairs. 一種電子元件量測設備,其包括: 一第一承載平台,其係用於承載一探針基板,該探針基板上係設有多數個探針對;一第二承載平台,其係用於承載一受測基板,該受測基板上係置放有多數個待測電子元件;一致動裝置,其係用於使該第一承載平台與該第二承載平台相互靠近,以使該第一承載平台所承載之探針基板上至少部分的探針對分別與相對應的該第二承載平台所承載之受測基板上的待測電子元件接觸;一電流輸出模組,其係可提供一定電流至該第一承載平台所承載之探針基板,並經由該探針對使其與該探針對所接觸的待測電子元件間形成一導電迴路;一切換裝置,其係可切換該電流輸出模組所提供之定電流至不同的探針對;一電壓量測元件,其係用於量測該第二承載平台所承載之受測基板上的待測電子元件的電壓;以及一運算裝置,與該電壓量測元件電性連接,接收該電壓量測元件所量測的電壓。 An electronic component measuring equipment, which includes: A first carrying platform, which is used to carry a probe substrate, on which a plurality of probe pairs are arranged; a second carrying platform, which is used to carry a tested substrate, on which the tested substrate A plurality of electronic components to be tested are placed; an actuating device is used to bring the first carrying platform and the second carrying platform close to each other, so that at least part of the probe substrate carried by the first carrying platform Pairs of probes are respectively in contact with the electronic components to be tested on the substrate under test carried by the corresponding second carrying platform; a current output module can provide a certain current to the probes carried by the first carrying platform The substrate forms a conductive loop through the probe pair and the electronic component under test in contact with the probe pair; a switching device that can switch the constant current provided by the current output module to different probe pairs; A voltage measuring element used to measure the voltage of the electronic component under test on the substrate under test carried by the second carrying platform; and a computing device electrically connected to the voltage measuring element to receive the voltage The voltage measured by the measuring element. 如請求項4所述之電子元件量測設備,其中該電流輸出模組係輸出該定電流至該第一承載平台所承載之探針基板上的一個探針對,再由該切換裝置將該定電流輸出切換至另一個探針對。 The electronic component measuring equipment as described in claim 4, wherein the current output module outputs the constant current to a probe pair on the probe substrate carried by the first carrying platform, and then the switching device switches the constant current to a probe pair on the probe substrate carried by the first carrying platform. The current output switches to the other probe pair. 如請求項1或4所述之電子元件量測設備,其進一步包含:一影像處理裝置,其係用於使該第一承載平台所承載之探針基板上的探針對與該第二承載平台所承載之受測基板上的待測電子元件對位。 The electronic component measurement equipment as described in claim 1 or 4, further comprising: an image processing device for aligning the probe pair on the probe substrate carried by the first carrying platform with the second carrying platform The electronic components under test on the substrate under test are aligned. 一種電子元件量測方法,其包括: 提供一受測基板,該受測基板上係置放有多數個待測電子元件;提供一探針基板,該探針基板上係設有多數個探針對;藉由該探針基板使該多數個待測電子元件藉由一線路而形成多數個待測迴路;提供一定電流至該多數個待測迴路之至少一者以形成一導電迴路;以及量測該多數個待測電子元件之至少一者所產生之光訊號。 An electronic component measurement method, which includes: Provide a substrate under test on which a plurality of electronic components under test are placed; provide a probe substrate on which a plurality of probe pairs are arranged; and use the probe substrate to make the plurality of probe pairs The electronic components under test form a plurality of circuits under test through a line; provide a certain current to at least one of the plurality of circuits under test to form a conductive circuit; and measure at least one of the plurality of electronic components under test The light signal generated by it. 如請求項7所述之電子元件量測方法,其中該光訊號係光的波長。 The electronic component measurement method as claimed in claim 7, wherein the optical signal is the wavelength of light. 如請求項7所述之電子元件量測方法,其中該光訊號係光的亮度。 The electronic component measurement method as claimed in claim 7, wherein the optical signal is the brightness of light. 一種電子元件量測方法,其包括:提供一受測基板,該受測基板上係置放有多數個已知電阻值之電阻元件;提供一探針基板,該探針基板上係設有多數個探針對;藉由該探針基板使該多數個已知電阻值之電阻元件藉由一線路而形成多數個第一待測迴路;提供一定電流至該多數個第一待測迴路之一者以形成一第一導電迴路,於該定電流下量測該第一導電迴路的跨壓,而得到一第一驅動電壓;將該多數個已知電阻值之電阻元件置換為多數個電子元件;藉由該探針基板使該多數個電子元件藉由該線路而形成多數個第二待測迴路;提供該定電流至該多數個第二待測迴路之一者以形成一第二導電迴路,於該定電流下量測電壓,而得到一第二驅動電壓;以及 計算相對應的該第一驅動電壓與該第二驅動電壓之間的電壓差。 A method for measuring electronic components, which includes: providing a substrate under test on which a plurality of resistive elements with known resistance values are placed; and providing a probe substrate on which a plurality of resistive elements with known resistance values are placed. A pair of probes; using the probe substrate, the plurality of resistive elements with known resistance values are formed through a line to form a plurality of first circuits to be measured; providing a certain current to one of the plurality of first circuits to be measured To form a first conductive loop, measure the cross-voltage of the first conductive loop under the constant current to obtain a first driving voltage; replace the plurality of resistive elements with known resistance values with a plurality of electronic components; Using the probe substrate, the plurality of electronic components are formed through the circuit to form a plurality of second circuits to be measured; the constant current is provided to one of the plurality of second circuits to be measured to form a second conductive circuit, Measure the voltage under the constant current to obtain a second driving voltage; and Calculate the voltage difference between the corresponding first driving voltage and the second driving voltage. 如請求項10所述之電子元件量測方法,其中該已知電阻值之電子元件的電阻值係大於0Ω且小於等於100Ω。 The electronic component measurement method as claimed in claim 10, wherein the resistance value of the electronic component with known resistance value is greater than 0Ω and less than or equal to 100Ω. 如請求項7或10所述之電子元件量測方法,其中該定電流係20μA至20mA。 The electronic component measurement method as described in claim 7 or 10, wherein the constant current is 20 μA to 20 mA. 一種發光二極體的製造方法,其係包括如請求項7至12中任一項之電子元件量測方法。 A method for manufacturing a light-emitting diode, which includes the electronic component measurement method according to any one of claims 7 to 12.
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