TWI821750B - Electronic component measuring equipment, electronic component measuring method, and led manufacturing method - Google Patents
Electronic component measuring equipment, electronic component measuring method, and led manufacturing method Download PDFInfo
- Publication number
- TWI821750B TWI821750B TW110135673A TW110135673A TWI821750B TW I821750 B TWI821750 B TW I821750B TW 110135673 A TW110135673 A TW 110135673A TW 110135673 A TW110135673 A TW 110135673A TW I821750 B TWI821750 B TW I821750B
- Authority
- TW
- Taiwan
- Prior art keywords
- probe
- electronic component
- carrying platform
- substrate
- under test
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000523 sample Substances 0.000 claims abstract description 187
- 239000000758 substrate Substances 0.000 claims abstract description 110
- 238000012360 testing method Methods 0.000 claims abstract description 78
- 230000003287 optical effect Effects 0.000 claims abstract description 42
- 238000005259 measurement Methods 0.000 claims description 18
- 238000000691 measurement method Methods 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 48
- 239000000463 material Substances 0.000 description 27
- 238000001514 detection method Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000003139 buffering effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000000504 luminescence detection Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
本發明涉及一種電子元件量測設備、電子元件量測方法及發光二極體的製造方法。 The invention relates to an electronic component measuring equipment, an electronic component measuring method and a manufacturing method of a light emitting diode.
現有技術中的多數個待測電子元件需要先從晶圓基底上彼此分離後再各別進行光學檢測,如此的檢測方式不但費時而且又費工。 In the prior art, many electronic components to be tested need to be separated from each other from the wafer substrate and then optically inspected individually. Such inspection method is not only time-consuming but also labor-intensive.
本發明所要解決的技術問題在於,針對現有技術的不足提供一種電子元件量測設備、電子元件量測方法及發光二極體的製造方法。 The technical problem to be solved by the present invention is to provide an electronic component measuring equipment, an electronic component measuring method and a light-emitting diode manufacturing method in view of the shortcomings of the existing technology.
為了解決上述的技術問題,本發明所採用的其中一技術方案是提供一種電子元件量測設備,其包括一第一承載平台、一第二承載平台、一致動裝置、一電流輸出模組、一切換裝置以及一光學量測元件。第一承載平台其係用於承載一探針基板,該探針基板上係設有多數個探針對。第二承載平台其係用於承載一受測基板,該受測基板上係置放有多數個待測電子元件。致動裝置係用於使該第一承載平台與該第二承載平台相互靠近,以使該第一承載平 台所承載之探針基板上至少部分的探針對分別與相對應的該第二承載平台所承載之受測基板上的待測電子元件接觸。電流輸出模組其係可提供一定電流至該第一承載平台所承載之探針基板,並經由該探針對使其與該探針對所接觸的待測電子元件間形成一導電迴路,而該待測電子元件係可藉由該導電迴路產生一光訊號。切換裝置係可切換該電流輸出模組所提供之定電流至不同的探針對。光學量測元件係用於量測該第二承載平台所承載之受測基板上的待測電子元件所產生的光訊號。 In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide an electronic component measuring equipment, which includes a first carrying platform, a second carrying platform, an actuating device, a current output module, and a switching device and an optical measuring element. The first carrying platform is used to carry a probe substrate, which is provided with a plurality of probe pairs. The second carrying platform is used to carry a substrate under test on which a plurality of electronic components under test are placed. The actuating device is used to bring the first load-bearing platform and the second load-bearing platform close to each other, so that the first load-bearing platform can be leveled At least part of the probe pairs on the probe substrate carried by the stage are respectively in contact with the corresponding electronic components to be tested on the substrate under test carried by the second carrying platform. The current output module can provide a certain current to the probe substrate carried by the first carrying platform, and form a conductive loop through the probe pair and the electronic component to be tested in contact with the probe pair, and the to-be-tested electronic component is in contact with the probe pair. The measuring electronic component can generate an optical signal through the conductive loop. The switching device can switch the constant current provided by the current output module to different probe pairs. The optical measuring element is used to measure the optical signal generated by the electronic component under test on the substrate under test carried by the second carrying platform.
為了解決上述的技術問題,本發明所採用的另外一技術方案是提供一種電子元件量測設備,其包括:一第一承載平台、一第二承載平台、一致動裝置、一電流輸出模組、一切換裝置、一電壓量測元件以及一運算裝置。第一承載平台係用於承載一探針基板,該探針基板上係設有多數個探針對。第二承載平台係用於承載一受測基板,該受測基板上係置放有多數個待測電子元件。致動裝置係用於使該第一承載平台與該第二承載平台相互靠近,以使該第一承載平台所承載之探針基板上至少部分的探針對分別與相對應的該第二承載平台所承載之受測基板上的待測電子元件接觸。電流輸出模組係可提供一定電流至該第一承載平台所承載之探針基板,並經由該探針對使其與該探針對所接觸的待測電子元件間形成一導電迴路。切換裝置係可切換該電流輸出模組所提供之定電流至不同的探針對。電壓量測元件係用於量測該第二承載平台所承載之受測基板上的待測電子元件的電壓。 In order to solve the above technical problems, another technical solution adopted by the present invention is to provide an electronic component measuring equipment, which includes: a first carrying platform, a second carrying platform, an actuating device, a current output module, a switching device, a voltage measuring element and a computing device. The first carrying platform is used to carry a probe substrate, which is provided with a plurality of probe pairs. The second carrying platform is used to carry a substrate under test, on which a plurality of electronic components under test are placed. The actuating device is used to bring the first carrying platform and the second carrying platform close to each other, so that at least part of the probe pairs on the probe substrate carried by the first carrying platform are respectively in contact with the corresponding second carrying platform. The electronic components under test on the substrate under test are in contact. The current output module can provide a certain current to the probe substrate carried by the first carrying platform, and form a conductive loop through the probe pair and the electronic component under test in contact with the probe pair. The switching device can switch the constant current provided by the current output module to different probe pairs. The voltage measuring element is used to measure the voltage of the electronic component under test on the substrate under test carried by the second carrying platform.
為了解決上述的技術問題,本發明所採用的另外再一技術方案是提供一種電子元件量測方法,其包括:提供一受測基板,該受測基板上係置放有多數個待測電子元件;使該多數個待測電子元件藉由一線路而形成多數個待測迴路;提供一定電流至該多數個待測迴路之至少一者以形成一導電迴路;以及量測該多數個待測電子元件之至少一者所產生之光訊號。 In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a method for measuring electronic components, which includes: providing a substrate under test on which a plurality of electronic components under test are placed. ; causing the plurality of electronic components to be tested to form a plurality of circuits to be tested through a line; providing a certain current to at least one of the plurality of circuits to be tested to form a conductive circuit; and measuring the plurality of electronic components to be tested A light signal generated by at least one of the components.
為了解決上述的技術問題,本發明所採用的另外再一技術方案是一種電子元件量測方法,其包括:提供一受測基板,該受測基板上係置放有多數個已知電阻值之電阻元件;使該多數個已知電阻值之電阻元件藉由一線路而形成多數個第一待測迴路;提供一定電流至該多數個第一待測迴路之一者以形成一第一導電迴路,於該定電流下量測該第一導電迴路的跨壓,而得到一第一驅動電壓;將該多數個已知電阻值之電阻元件置換為多數個電子元件;使該多數個電子元件藉由該線路而形成多數個第二待測迴路;提供該定電流至該多數個第二待測迴路之一者以形成一第二導電迴路,於該定電流下量測電壓,而得到一第二驅動電壓;以及計算相對應的該第一驅動電壓與該第二驅動電壓之間的電壓差。 In order to solve the above technical problems, another technical solution adopted by the present invention is an electronic component measurement method, which includes: providing a substrate under test on which a plurality of known resistance values are placed. Resistive elements; allowing the plurality of resistive elements with known resistance values to form a plurality of first circuits to be measured through a line; providing a certain current to one of the plurality of first circuits to be measured to form a first conductive circuit , measure the cross-voltage of the first conductive loop under the constant current to obtain a first driving voltage; replace the plurality of resistive elements with known resistance values with a plurality of electronic components; make the plurality of electronic components use A plurality of second circuits to be measured are formed by the circuit; the constant current is provided to one of the plurality of second circuits to be measured to form a second conductive circuit, and a voltage is measured under the constant current to obtain a first two driving voltages; and calculating the voltage difference between the corresponding first driving voltage and the second driving voltage.
為了解決上述的技術問題,本發明所採用的另外再一技術方案是提供一種發光二極體的製造方法,其係包括如上所述之電子元件量測方法。 In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a manufacturing method of a light emitting diode, which includes the electronic component measurement method as described above.
為使能進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。 In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and illustration and are not used to limit the present invention.
Z1~Z4:電子元件量測設備 Z1~Z4: Electronic component measuring equipment
M1:第二承載平台 M1: Second carrying platform
M2:第一承載平台 M2: the first carrying platform
M3:光學量測元件 M3: Optical measuring element
B1:第一對位記號 B1: first counterpoint mark
B2:第二對位記號 B2: Second counterpoint mark
S:受測基板 S: Tested substrate
S1:切換裝置 S1: switching device
C:待測電子元件 C: Electronic components to be tested
C101:第一導電接點 C101: First conductive contact
C102:第二導電接點 C102: Second conductive contact
C1:電流輸出模組 C1: Current output module
E1:致動裝置 E1: Actuating device
D:運算裝置 D: computing device
VD1:電壓量測元件 VD1: Voltage measuring element
V1:電壓輸出模組 V1: Voltage output module
IP:影像處理裝置 IP: image processing device
1:探針基板 1: Probe substrate
101:第一導電線路 101: First conductive line
102:第二導電線路 102: Second conductive line
2G:導電探針群組 2G: Conductive probe group
2:探針對 2: Probe pair
21:第一導電接觸腳 21: First conductive contact pin
211:第一柱體 211:First cylinder
212:第一導電層 212: First conductive layer
213:第一彈性接觸層 213: First elastic contact layer
22:第二導電接觸腳 22: Second conductive contact pin
221:第二柱體 221:Second cylinder
222:第二導電層 222: Second conductive layer
223:第二彈性接觸層 223: Second elastic contact layer
P:導電電極組 P: Conductive electrode group
PG1:第一導電電極組 PG1: First conductive electrode group
PG2:第二導電電極組 PG2: Second conductive electrode group
P1:第一導電電極 P1: first conductive electrode
P2:第二導電電極 P2: Second conductive electrode
3:控制晶片 3: Control chip
T1:第一總導電電極 T1: The first total conductive electrode
T2:第二總導電電極 T2: The second total conductive electrode
L:光源 L: light source
R1:第一材料層 R1: first material layer
R2:第二材料層 R2: Second material layer
W:晶圓材料 W:wafer material
S110、S130、S150、S170、S210、S230、S250、S270、S290、S310、S330:步驟 S110, S130, S150, S170, S210, S230, S250, S270, S290, S310, S330: Steps
圖1為本發明其中一實施例的探針基板的製作方法的步驟中有關形成一第一材料層於一晶圓材料上的俯視示意圖。 FIG. 1 is a schematic top view of forming a first material layer on a wafer material during the steps of a method for manufacturing a probe substrate according to one embodiment of the present invention.
圖2為本發明其中一實施例的探針基板的製作方法的步驟中有關形成一第一材料層於一晶圓材料上的側視示意圖。 FIG. 2 is a schematic side view of forming a first material layer on a wafer material during the steps of a method for manufacturing a probe substrate according to one embodiment of the present invention.
圖3為本發明其中一實施例的探針基板的製作方法的步驟中有關移除一部分的第一材料層以在晶圓材料上形成多個第一柱體、多個第二柱體以及多個第二對位記號的俯視示意圖。 FIG. 3 shows the steps of removing a portion of the first material layer to form a plurality of first pillars, a plurality of second pillars and a plurality of second pillars on the wafer material in the manufacturing method of the probe substrate according to one embodiment of the present invention. A top view of the second counterpoint mark.
圖4為本發明其中一實施例的探針基板的製作方法的步驟中有關移除一部分的第一材料層以在晶圓材料上形成多個第一柱體、多個第二柱體以及多個第二對位記號的側視示意圖。 FIG. 4 shows the steps of removing a portion of the first material layer to form a plurality of first pillars, a plurality of second pillars and a plurality of second pillars on the wafer material in the manufacturing method of the probe substrate according to one embodiment of the present invention. A side view of the second counterpoint mark.
圖5為本發明其中一實施例的探針基板的製作方法的步驟中有關形成一第二材料層於晶圓材料上以覆蓋多個第一柱體、多個第二柱體以及多個第二對位記號的俯視示意圖。 FIG. 5 shows the steps of forming a second material layer on the wafer material to cover a plurality of first pillars, a plurality of second pillars and a plurality of third pillars in the manufacturing method of a probe substrate according to one embodiment of the present invention. A top view of the two counterpoint marks.
圖6為本發明其中一實施例的探針基板的製作方法的步驟中有關形成一第二材料層於晶圓材料上以覆蓋多個第一柱體、多個第二柱體以及多個第二對位記號的側視示意圖。 FIG. 6 shows the steps of forming a second material layer on the wafer material to cover a plurality of first pillars, a plurality of second pillars and a plurality of third pillars in the manufacturing method of a probe substrate according to one embodiment of the present invention. Side view of two counterpoint marks.
圖7為本發明其中一實施例的探針基板的俯視示意圖。 FIG. 7 is a schematic top view of a probe substrate according to one embodiment of the present invention.
圖8為本發明其中一實施例的探針基板的側視示意圖。 FIG. 8 is a schematic side view of a probe substrate according to one embodiment of the present invention.
圖9為本發明其中一實施例的第一總導電電極與多個第一導電電極之間的電性連接關係的功能方塊圖。 FIG. 9 is a functional block diagram of the electrical connection relationship between the first main conductive electrode and the plurality of first conductive electrodes according to one embodiment of the present invention.
圖10為本發明其中一實施例的第二總導電電極與多個第二導電電極之間的電性連接關係的功能方塊圖。 FIG. 10 is a functional block diagram of the electrical connection relationship between the second main conductive electrode and the plurality of second conductive electrodes according to one embodiment of the present invention.
圖11為本發明其中一實施例的受測基板的俯視示意圖。 FIG. 11 is a schematic top view of the substrate under test according to one embodiment of the present invention.
圖12為本發明其中一實施例的受測基板的側視示意圖。 FIG. 12 is a schematic side view of the substrate under test according to one embodiment of the present invention.
圖13為本發明其中一實施例的電子元件量測設備的探針基板電性接觸受測基板之前的側視示意圖。 13 is a schematic side view of the probe substrate of the electronic component measuring equipment before electrical contact with the substrate under test according to one embodiment of the present invention.
圖14為本發明其中一實施例的電子元件量測設備的探針基板電性接觸受測基板之後的側視示意圖。 14 is a schematic side view of the probe substrate of the electronic component measuring equipment according to one embodiment of the present invention after it is electrically in contact with the substrate under test.
圖15為本發明其中一實施例的每一控制晶片電性連接於相對應的導電電極組與相對應的導電探針群組之間的功能方塊圖。 FIG. 15 is a functional block diagram of each control chip electrically connected between the corresponding conductive electrode group and the corresponding conductive probe group according to one embodiment of the present invention.
圖16為本發明其中一實施例電子元件量測設備的系統架構示意 圖。 Figure 16 is a schematic diagram of the system architecture of an electronic component measuring device according to one embodiment of the present invention. Figure.
圖17為本發明其中一實施例電子元件量測設備的系統架構示意圖。 FIG. 17 is a schematic system architecture diagram of an electronic component measuring device according to one embodiment of the present invention.
圖18為本發明其中一實施例的探針基板的俯視示意圖。 Figure 18 is a schematic top view of a probe substrate according to one embodiment of the present invention.
圖19為本發明其中一實施例電子元件量測設備的系統架構示意圖。 FIG. 19 is a schematic system architecture diagram of an electronic component measuring device according to one embodiment of the present invention.
圖20為本發明其中一實施例電子元件量測設備的系統架構示意圖。 FIG. 20 is a schematic system architecture diagram of an electronic component measuring device according to one embodiment of the present invention.
圖21為本發明另外一實施例的探針基板的俯視示意圖。 FIG. 21 is a schematic top view of a probe substrate according to another embodiment of the present invention.
圖22為本發明另外一實施例的探針基板的側視示意圖。 Figure 22 is a schematic side view of a probe substrate according to another embodiment of the present invention.
圖23為本發明另外一實施例的電子元件量測設備的探針基板電性接觸受測基板之後的側視示意圖。 23 is a schematic side view of an electronic component measuring device according to another embodiment of the present invention after the probe substrate electrically contacts the substrate under test.
圖24為本發明實施例之電子元件量測方法步驟流程示意圖。 FIG. 24 is a schematic flowchart of steps of an electronic component measurement method according to an embodiment of the present invention.
圖25為本發明另外一實施例之電子元件量測方法步驟流程示意圖。 FIG. 25 is a schematic flowchart of the steps of an electronic component measurement method according to another embodiment of the present invention.
以下是通過特定的具體實施例來說明本發明所公開有關“電子元件量測設備及電子元件量測方法”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以實行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不背離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。 另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。 The following is a description of the implementation of the "electronic component measurement equipment and electronic component measurement method" disclosed in the present invention through specific embodiments. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. . The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only simple schematic illustrations and are not depictions based on actual dimensions, as is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the scope of the present invention. In addition, the term "or" used in this article shall include any one or combination of more of the associated listed items depending on the actual situation.
參閱圖1至圖15所示,本發明提供一種電子元件量測設備Z1,其包括:一第二承載平台M1、一第一承載平台M2以及一光學量測元件M3。第二承載平台M1用於承載一受測基板S,並且受測基板S上係置放有多數個待測電子元件C。第一承載平台M2設置在第二承載平台M1的上方,並且第一承載平台M2包括一探針基板1以及設置在探針基板1上的多數個探針對2。光學量測元件M3設置在第二承載平台M1的下方,以用於對多數個待測電子元件C進行光學檢測。藉此,待測電子元件C能透過相對應的探針對2所提供的電力而產生光源L,並且待測電子元件C所產生的光源L能透過光學量測元件M3以進行光學檢測。
Referring to FIGS. 1 to 15 , the present invention provides an electronic component measuring device Z1, which includes: a second carrying platform M1, a first carrying platform M2 and an optical measuring element M3. The second carrying platform M1 is used to carry a substrate S under test, and a plurality of electronic components C under test are placed on the substrate S under test. The first carrying platform M2 is disposed above the second carrying platform M1 , and the first carrying platform M2 includes a
參閱圖1至圖10所示,本發明實施例提供一種探針基板1的製作方法。舉例來說,探針基板1的製作方法可以包括下列步驟:首先,配合圖1與圖2所示,可以透過半導體製程(例如塗佈、蒸鍍、濺鍍)或者非半導體製程,形成一第一材料層R1於一晶圓材料W上,其中第一材料層R1可以是環氧樹酯(epoxy)或者光阻(photoresist)等高分子材料(也可以是SiOx或者SiNx等無機材料,或者是任何的彈性材料或者非彈性材料,或者是任何的導電材料或者非導電材料),並且晶圓材料W可以是藍寶石、石英、玻璃、矽等半導體材料;接著,配合圖1至圖4所示,可以透過半導體製程(例如曝光、顯影)或者非半導體製程,移除一部分的第一材料層R1,以在晶圓材料W上形成多個第一柱體211、多個第二柱體221以及多個第二對位記號B2;然後,配合圖5與圖6所示,可以透過半導體製程(例如塗佈、蒸鍍、濺鍍)或者非半導體製程,形成一第二材料層R2於晶圓材料W上,以覆蓋多個第一柱體211、多個第二柱體221以
及多個第二對位記號B2;接下來,配合圖5至圖8所示,可以透過半導體製程(例如曝光、顯影)或者非半導體製程,圖案化第二材料層R2,以形成一探針基板1。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
Referring to FIGS. 1 to 10 , an embodiment of the present invention provides a method for manufacturing a
參閱圖16所示,本發明實施例提供一種電子元件量測設備Z1,其包括:一第一承載平台M2、一第二承載平台M1、一光學量測元件M3、一致動裝置E1以及一電流輸出模組C1。致動裝置E1與第一承載平台M2以及第二承載平台M1電性連接,其係用於控制第一承載平台M2與第二承載平台M1之間的相對位置,使第一承載平台M2與第二承載平台M1相互靠近以接觸及對位。電流輸出模組C1係用以提供電流至第一承載平台M2。在一實施例中,電流輸出模組C1係輸出一定電流。在一實施例中,定電流為20μA至20mA。 Referring to FIG. 16 , an embodiment of the present invention provides an electronic component measuring equipment Z1, which includes: a first carrying platform M2, a second carrying platform M1, an optical measuring element M3, an actuating device E1 and a current Output module C1. The actuating device E1 is electrically connected to the first bearing platform M2 and the second bearing platform M1, and is used to control the relative position between the first bearing platform M2 and the second bearing platform M1, so that the first bearing platform M2 and the second bearing platform M1 are electrically connected. The two carrying platforms M1 are close to each other for contact and alignment. The current output module C1 is used to provide current to the first carrying platform M2. In one embodiment, the current output module C1 outputs a certain current. In one embodiment, the constant current is 20 μA to 20 mA.
首先,配合圖11至圖13所示,第二承載平台M1能用於承載一受測基板S,並且受測基板S上係置放有多數個待測電子元件C(多數個待測電子元件C尚未從受測基板S上分離,並且也尚未被任何封裝材料所封裝,例如為裸晶片)。舉例來說,第二承載平台M1與受測基板S都具有透光區域,並且待測電子元件C為尚未封裝完成的裸晶片。另外,當待測電子元件C可為一水平式晶片時,每一待測電子元件C可以包括一第一導電接點C101以及一第二導電接點C102。然而,本發明不以上述所舉的例子為限。 First, as shown in FIGS. 11 to 13 , the second carrying platform M1 can be used to carry a substrate S under test, and a plurality of electronic components to be tested C (a plurality of electronic components to be tested) are placed on the substrate S to be tested. C has not been separated from the substrate S under test, and has not been encapsulated by any packaging material, such as a bare chip). For example, the second carrying platform M1 and the substrate under test S both have light-transmitting areas, and the electronic component C under test is a bare chip that has not yet been packaged. In addition, when the electronic component C to be tested may be a horizontal wafer, each electronic component C to be tested may include a first conductive contact C101 and a second conductive contact C102. However, the present invention is not limited to the above examples.
再者,配合圖7至圖10、圖13以及圖14所示,第一承載平台M2可移動地設置在第二承載平台M1的上方,並且第一承載平台M2包括一探針基板1以及設置在探針基板1上的多數個探針對2。在一實施例中,探針基板1與受測基板S的大小可以是相同或者相異,並且每一探針對2可以包括一第一導電接觸腳21以及一第二導電接觸腳22。然而,本發明不以上述所舉的例子為限。
Furthermore, as shown in FIGS. 7 to 10 , 13 and 14 , the first carrying platform M2 is movably disposed above the second carrying platform M1 , and the first carrying platform M2 includes a
另外,配合圖13與圖14所示,光學量測元件M3設置在第二承載
平台M1的下方,以用於對多數個待測電子元件C的至少一個進行光學檢測。舉例來說,光學量測元件M3可以是具有影像感測功能的任何影像擷取裝置,然而本發明不以上述所舉的例子為限。藉此,如圖14所示,當第一承載平台M2以及第二承載平台M1藉由圖16的致動裝置E1而彼此靠近且接觸,且每一探針對2的第一導電接觸腳21與第二導電接觸腳22分別電性接觸相對應的待測電子元件C的第一導電接點C101與第二導電接點C102時,待測電子元件C就能與相對應的探針對2建立待測迴路,並藉由通過相對應的探針對2的電力而產生光源L,並且待測電子元件C所產生的光源L就能透過光學量測元件M3以進行光學檢測,藉此以將品質良好的待測電子元件與品質不良的待測電子元件篩選出來。舉例來說,光學檢測可以包括有發光檢測(檢測待測電子元件C是否有產生光源L)、亮度檢測(檢測待測電子元件C所產生的光源L的亮度)、波長檢測、以及色座標檢測(檢測待測電子元件C所產生的光源L在色度座標圖上的分布)。
In addition, as shown in Figure 13 and Figure 14, the optical measurement element M3 is arranged on the second carrier
Below the platform M1, it is used for optical inspection of at least one of the plurality of electronic components C to be tested. For example, the optical measuring element M3 can be any image capturing device with an image sensing function, but the present invention is not limited to the above examples. Thereby, as shown in FIG. 14 , when the first carrying platform M2 and the second carrying platform M1 are close to and in contact with each other through the actuating device E1 of FIG. 16 , and the first
舉例來說,配合圖7與圖8所示,第一導電接觸腳21包括設置在探針基板1上的一第一柱體211以及覆蓋第一柱體211的一第一導電層212,並且第二導電接觸腳22包括設置在探針基板1上的一第二柱體221以及覆蓋第二柱體221的一第二導電層222。另外,探針基板1包括多個第一導電線路101以及分別與多個第一導電線路101彼此分離的多個第二導電線路102。每一第一導電線路101可電性連接於相對應的第一導電接觸腳21的第一導電層212,並且每一第二導電線路102電性連接於相對應的第二導電接觸腳22的第二導電層222。然而,本發明不以上述所舉的例子為限。
For example, as shown in FIGS. 7 and 8 , the first
舉例來說,配合圖7與圖8所示,多數個探針對2可以被區分成多個導電探針群組2G,並且每一導電探針群組2G包括至少兩個探針對2(例如,圖7顯示最上面的導電探針群組2G包括有3個探針對2)。另外,探針基板1包
括分別電性連接於多個導電探針群組2G的多個導電電極組P,並且每一導電電極組P包括一第一導電電極P1以及一第二導電電極P2。此外,每一導電探針群組2G的每一探針對2的第一導電接觸腳21的第一導電層212能透過相對應的第一導電線路101,以電性連接於(或者電性接觸)相對應的導電電極組P的第一導電電極P1。每一導電探針群組2G的每一探針對2的第二導電接觸腳22的第二導電層222能透過相對應的第二導電線路102,以電性連接於(或者電性接觸)相對應的導電電極組P的第二導電電極P2。然而,本發明不以上述所舉的例子為限。
For example, as shown in FIGS. 7 and 8 , a plurality of probe pairs 2 can be divided into a plurality of
舉例來說,配合圖7、圖9與圖10所示,探針基板1進一步包括電性連接於多個第一導電電極P1的一第一總導電電極T1以及電性連接於多個第二導電電極P2的一第二總導電電極T2。另外,第一總導電電極T1能透過多個第一導電電極P1,以電性連接於每一導電探針群組2G的每一探針對2的第一導電接觸腳21的第一導電層212,並且第二總導電電極T2能透過多個第二導電電極P2,以電性連接於每一導電探針群組2G的每一探針對2的第二導電接觸腳22的第二導電層222。藉此,第一總導電電極T1以及第二總導電電極T2可將來自電流輸出模組C1的電流提供至對應的探針對2。
For example, as shown in FIGS. 7 , 9 and 10 , the
值得注意的是,配合圖7與圖11所示,受測基板S包括多個第一對位記號B1,並且探針基板1包括分別對應於多個第一對位記號B1的多個第二對位記號B2。藉此,本發明能透過多個第一對位記號B1與多個第二對位記號B2的相互對位,以使得每一探針對2的第一導電接觸腳21與第二導電接觸腳22能準確地分別電性接觸相對應的待測電子元件C的第一導電接點C101與第二導電接點C102(如圖13與圖14所示),以降低探針對2與待測電子元件C相互錯位的可能性。
It is worth noting that, as shown in FIGS. 7 and 11 , the substrate S under test includes a plurality of first alignment marks B1 , and the
值得注意的是,如圖15所示,當多數個探針對2被區分成多個導
電探針群組2G時(可以被區分成多個矩形區域),第一承載平台M2可進一步包括分別電性連接於多個導電探針群組2G的多個控制晶片3,並且探針基板1包括分別電性連接於多個控制晶片3的多個導電電極組P。舉例來說,當控制晶片3為一限流晶片時,透過限流晶片對於電流量的控制,以使得同一個導電探針群組2G的多數個探針對2能分別提供固定的電流給相對應多數個待測電子元件C(相對應其中一導電探針群組2G的一待測電子元件區域)。因此,當相對應多數個待測電子元件C透過同一個導電探針群組2G的多數個探針對2所提供的固定電流而產生光源時,相對應多數個待測電子元件C所產生的光源就能透過光學量測元件M3以進行光學檢測,以使得位於同一待測電子元件區域的多數個待測電子元件C能依據發光品質來進行分類處理。
It is worth noting that, as shown in Figure 15, when multiple probe pairs 2 are divided into multiple leads
When the
值得注意的是,第一承載平台M2的第一總導電電極T1、第二總導電電極T2、多個導電電極組P、多個第一導電線路101、多個第二導電線路102以及多個第二對位記號B2都會被一絕緣保護層(圖未示)所覆蓋,而每一探針對2的第一導電接觸腳21與第二導電接觸腳22不被絕緣保護層所覆蓋。
It is worth noting that the first total conductive electrode T1, the second total conductive electrode T2, a plurality of conductive electrode groups P, a plurality of first
請參閱圖17至圖18所示,本發明實施例提供另一種電子元件量測設備Z2,在本實施例中,電子元件量測設備Z2更進一步包括了一切換裝置S1,其中,切換裝置S1與電流輸出模組C1以及第一承載平台M2電性連接,用以切換電流輸出模組C1所提供之定電流至第一承載平台M2上不同的探針對2。 Referring to Figures 17 and 18, an embodiment of the present invention provides another electronic component measuring equipment Z2. In this embodiment, the electronic component measuring equipment Z2 further includes a switching device S1, wherein the switching device S1 It is electrically connected to the current output module C1 and the first carrying platform M2, and is used to switch the constant current provided by the current output module C1 to different probe pairs 2 on the first carrying platform M2.
在一實施例中,切換裝置S1例如可以切換開關或多通道電路切換盒來實現,但本發明不以此為限制。 In one embodiment, the switching device S1 can be implemented by, for example, a switching switch or a multi-channel circuit switching box, but the invention is not limited thereto.
在此實施例中,探針基板1的多數個探針對2可以被區分成多個導電探針群組2G,並且每一導電探針群組2G包括至少兩個探針對2(例如,圖18顯示最上面的導電探針群組2G包括有5個探針對2)。另外,探針基板1包括
分別電性連接於多數個導電探針群組2G的第一導電電極組PG1以及第二導電電極組PG2,第一導電電極組PG1包括多數個第一導電電極P1,第二導電電極組PG2包括多數個第二導電電極P2,多數個第一導電電極P1彼此不電性連接,多數個第二導電電極P2彼此不電性連接,且同一導電探針群組2G中的多數個探針對2與同一個第一導電電極P1電性連接,且同一導電探針群組2G中多數個探針對2與不同的第二導電電極P2電性連接。
In this embodiment, the plurality of probe pairs 2 of the
因此,在此實施例中,根據切換裝置S1的控制,在同一時間點,至少一個第一導電電極P1以及至少一個第一導電電極P2將同時提供電力至對應的探針對2,使探針基板1的多數個探針對2可同時有一個探針對2或複數個探針對2接收電力而以進行前述之光學檢測。
Therefore, in this embodiment, according to the control of the switching device S1, at the same point in time, at least one first conductive electrode P1 and at least one first conductive electrode P2 will simultaneously provide power to the
參閱圖19所示,本發明實施例提供另一種電子元件量測設備Z3,在此實施例中,電子元件量測設備Z3更包括一電壓輸出模組V1、一電壓量測元件VD1以及一運算裝置D,其中,電壓輸出模組V1與第一承載平台M2電性連接,用以提供一定電壓至第一承載平台M2。電壓量測單元VD1與第一承載平台M2電性連接,用於量測第二承載平台M1所承載之受測基板S上的待測電子元件C所形成的電壓。運算裝置D用以接收電壓量測單元VD1所量測的電壓,以計算出待測電子元件C的驅動電壓。 Referring to FIG. 19 , an embodiment of the present invention provides another electronic component measuring device Z3. In this embodiment, the electronic component measuring device Z3 further includes a voltage output module V1, a voltage measuring element VD1 and a computing unit. Device D, in which the voltage output module V1 is electrically connected to the first carrying platform M2 to provide a certain voltage to the first carrying platform M2. The voltage measurement unit VD1 is electrically connected to the first carrying platform M2 and is used to measure the voltage formed by the electronic component C under test on the substrate S under test carried by the second carrying platform M1. The computing device D is used to receive the voltage measured by the voltage measurement unit VD1 to calculate the driving voltage of the electronic component C under test.
進一步地,請同時參考圖18以及圖19。在此實施例中,在同一時間,只有一個第一導電電極P1以及一個第二導電電極P2能提供電力至相對應的待測電子元件C以建立導電迴路。 Further, please refer to Figure 18 and Figure 19 at the same time. In this embodiment, at the same time, only one first conductive electrode P1 and one second conductive electrode P2 can provide power to the corresponding electronic component C under test to establish a conductive loop.
藉此,如圖14所示,當第一承載平台M2以及第二承載平台M1藉由致動裝置E1而彼此靠近且接觸,且每一探針對2的第一導電接觸腳21與第二導電接觸腳22分別電性接觸相對應的待測電子元件C的第一導電接點C101與第二導電接點C102時,多數個待測電子元件C就能與相對應的探針對2建立待
測迴路,且其中一個探針對2將提供的電力傳遞至相對應的待測電子元件C而將使得待測迴路成為導電迴路,待測電子元件C產生光源L,並且待測電子元件C所產生的光源L就能透過光學量測元件M3以進行光學檢測。同時,電壓量測單元VD1(如圖19所示)量測導電迴路所產生的驅動電壓,並將驅動電壓提供至運算裝置D。
Thereby, as shown in FIG. 14 , when the first carrying platform M2 and the second carrying platform M1 are close to and in contact with each other through the actuating device E1 , and the first
在一實施例中,電壓量測單元VD1量測與待測電子元件C建立導電迴路的第一導電電極P1以及第二導電電極P2之間的跨壓來得到驅動電壓。舉例來說,電壓量測單元VD1量測接收定電流的第一導電電極P1或第二導電電極P2的電壓值來得到驅動電壓。 In one embodiment, the voltage measurement unit VD1 measures the voltage across the first conductive electrode P1 and the second conductive electrode P2 that establishes a conductive loop with the electronic component C under test to obtain the driving voltage. For example, the voltage measurement unit VD1 measures the voltage value of the first conductive electrode P1 or the second conductive electrode P2 that receives a constant current to obtain the driving voltage.
在一實施例中,待測電子元件C例如為已知電阻值之電阻元件。 In one embodiment, the electronic component C to be tested is, for example, a resistor component with a known resistance value.
在一實施例中,已知電阻值之電子元件的電阻值係大於0歐姆(Ω)且小於等於100歐姆(Ω)。例如已知電阻值之電子元件的電阻值係0.0001歐姆(Ω)至100歐姆(Ω)之間,但本發明不以此為限制。 In one embodiment, the resistance value of the electronic component with a known resistance value is greater than 0 ohms (Ω) and less than or equal to 100 ohms (Ω). For example, the resistance value of an electronic component with a known resistance value is between 0.0001 ohm (Ω) and 100 ohm (Ω), but the present invention is not limited to this.
因此,在待測電子元件C為已知電阻值之電阻元件的實施例中,多個電阻元件的其中一者可與相對應的探針對2建立第一導電迴路。同時,電壓量測單元VD1量測第一導電迴路所產生的第一驅動電壓,並將第一驅動電壓提供至運算裝置D。藉此,運算裝置D可得到每一電阻元件所產生的第一驅動電壓。
Therefore, in an embodiment in which the electronic component C to be tested is a resistive component with a known resistance value, one of the plurality of resistive components can establish a first conductive loop with the
在一實施例中,待測電子元件C例如為發光二極體。 In one embodiment, the electronic component C to be tested is, for example, a light-emitting diode.
因此,在待測電子元件C為發光二極體的實施例中,多個發光二極體的其中一者就能與相對應的探針對2建立第二導電迴路,其中,上述之第一導電迴路與第二導電迴路彼此可具有對應關係,即第一導電迴路與第二導電迴路係由相同的探針對2所建立的導電迴路。多個發光二極體的其中一者透過相對應的探針對2所提供的電力而產生光源L,並且發光二極體所產生的光
源L就能透過光學量測元件M3以進行光學檢測。同時,電壓量測單元VD1量測第二導電迴路所產生的第二驅動電壓,並將第二驅動電壓提供至運算裝置D。藉此,運算裝置D可得到每一發光二極體所產生的第二驅動電壓。
Therefore, in the embodiment where the electronic component C to be tested is a light-emitting diode, one of the plurality of light-emitting diodes can establish a second conductive loop with the
由於第一驅動電壓與第二驅動電壓是由同一探針對2所形成的線路來量測所得,此外第一驅動電壓是由已知電阻值之電阻元件所產生,因此可由第一驅動電壓與第二驅動電壓之間的電壓差得到發光二極體本身的驅動電壓。故,在上述實施例中,運算裝置D可藉由計算相對應的第一驅動電壓與第二驅動電壓之間的電壓差來得到發光二極體本身的驅動電壓。同時,由於第一驅動電壓與第二驅動電壓是由同一探針對2所形成的線路來量測所得,因此線路上的電性狀態(走線阻值、製程變異)將不影響發光二極體的驅動電壓的量測結果,更增進發光二極體的驅動電壓量測的正確性。
Since the first driving voltage and the second driving voltage are measured by the line formed by the
在一實施例中,運算裝置D例如為電腦伺服器,但本發明不以此為限制。 In one embodiment, the computing device D is, for example, a computer server, but the invention is not limited to this.
參閱圖20所示,本發明實施例提供另一種電子元件量測設備Z4,在此實施例中,電子元件量測設備Z4更包括一影像處理裝置IP,其配置於第一承載平台M2,用以取得包括第一對位記號B1以及第二對位記號B2的影像(如圖7以及圖11所示),並藉由影像比對進行第一承載平台M2與第二承載平台M1之間的對位控制,使第一承載平台M2所承載之探針基板1上的探針對2與第二承載平台M1所承載之受測基板S上的待測電子元件C準確對位(如圖13所示)。
Referring to FIG. 20 , an embodiment of the present invention provides another electronic component measuring equipment Z4. In this embodiment, the electronic component measuring equipment Z4 further includes an image processing device IP, which is configured on the first carrying platform M2. To obtain images including the first alignment mark B1 and the second alignment mark B2 (as shown in Figures 7 and 11), and perform image comparison between the first bearing platform M2 and the second bearing platform M1 Alignment control enables accurate alignment of the
在一實施例中,影像處理裝置IP例如為光學影像對位系統,但本發明不以此為限制。 In one embodiment, the image processing device IP is, for example, an optical image alignment system, but the invention is not limited to this.
值得一提的是,配合圖8、圖21以及圖22所示,在圖案化第二材料層R2以形成如圖8所示的探針基板1的步驟後,探針基板1的製作方法可以進
一步包括:可以透過印刷、塗佈、蒸鍍、濺鍍、含浸等方式,將具有彈性緩衝效果的導電材料(例如奈米銀、銀漿、導電UV膠)形成在多個第一導電層212與多個第二導電層222上。舉例來說,導電材料覆蓋在第一導電層212的一頂端上,以形成具有彈性緩衝效果的一第一彈性接觸層213,並且導電材料覆蓋在第二導電層222的一頂端上,以形成具有彈性緩衝效果的一第二彈性接觸層223。藉此,如圖23所示,當每一探針對2的第一導電接觸腳21與第二導電接觸腳22分別電性接觸相對應的待測電子元件C的第一導電接點C101與第二導電接點C102時,由於第一導電接觸腳21的第一彈性接觸層213與第二導電接觸腳22的第二彈性接觸層223會分別直接接觸相對應的待測電子元件C的第一導電接點C101與第二導電接點C102,所以第一導電接觸腳21對第一導電接點C101的撞擊程度或者磨耗程度能夠透過第一彈性接觸層213的使用而降低,並且第二導電接觸腳22對第二導電接點C102的撞擊程度或者磨耗程度能夠透過第二彈性接觸層223的使用而降低,進而有效提升多數個探針對2的使用壽命。
It is worth mentioning that, as shown in Figures 8, 21 and 22, after the step of patterning the second material layer R2 to form the
更進一步來說,配合圖22與圖23所示,第一導電接觸腳21包括部分地(或者完全地)覆蓋第一導電層212的一第一彈性接觸層213,以用於電性接觸相對應的待測電子元件C的第一導電接點C101。另外,第二導電接觸腳22包括部分地(或者完全地)覆蓋第二導電層222的一第二彈性接觸層223,以用於電性接觸相對應的待測電子元件C的第二導電接點C102。
Furthermore, as shown in FIGS. 22 and 23 , the first
更進一步來說,配合圖21與圖22所示,每一導電探針群組2G的每一探針對2的第一導電接觸腳21的第一彈性接觸層213能透過相對應的第一導電線路101,以電性連接於相對應的導電電極組P的第一導電電極P1。另外,每一導電探針群組2G的每一探針對2的第二導電接觸腳22的第二彈性接觸層223能透過相對應的第二導電線路102,以電性連接於相對應的導電電極組P的第二導電電極P2。
Furthermore, as shown in FIGS. 21 and 22 , the first
更進一步來說,配合圖21與圖22所示,第一總導電電極T1能透過多個第一導電電極P1,以電性連接於每一導電探針群組2G的每一探針對2的第一導電接觸腳21的第一彈性接觸層213。另外,第二總導電電極T2能透過多個第二導電電極P2,以電性連接於每一導電探針群組2G的每一探針對2的第二導電接觸腳22的第二彈性接觸層223。也就是說,由於第一總導電電極T1可以同時電性連接於多個第一導電電極P1,所以第一承載平台M2可以透過第一總導電電極T1的使用,而同時對所有的多個第一導電接觸腳21提供電源。另外,由於第二總導電電極T2能同時電性連接於多個第二導電電極P2,所以第一承載平台M2可以透過第二總導電電極T2的使用,而同時對所有的多個第二導電接觸腳22提供電源。
Furthermore, as shown in FIGS. 21 and 22 , the first total conductive electrode T1 can be electrically connected to each
由本發明的上述較佳實施例及應用方式可歸納出一種電子元件量測方法,可以上述電子元件量測設備(Z1~Z4)來實現,如圖24所示,方法包括以下步驟:提供受測基板,受測基板上係置放有多數個待測電子元件(S110);使多數個待測電子元件藉由線路而形成多數個待測迴路(S130);線路例如為探針對2與第一導電電極P1及第二導電電極P2之間的待測迴路;提供定電流至多數個待測迴路之至少一者以形成導電迴路(S150);以及量測多數個待測電子元件之至少一者所產生之光訊號(S170)。
From the above-mentioned preferred embodiments and application methods of the present invention, an electronic component measurement method can be summarized, which can be implemented by the above-mentioned electronic component measurement equipment (Z1~Z4). As shown in Figure 24, the method includes the following steps: Provide the measured A plurality of electronic components to be tested are placed on the substrate to be tested (S110); a plurality of electronic components to be tested are formed through lines to form a plurality of circuits to be tested (S130); the lines are, for example, the
由本發明的上述較佳實施例及應用方式可歸納出另一種電子元件量測方法,可以上述電子元件量測設備(Z2~Z4)來實現,如圖25所示,方法包括以下步驟:提供受測基板,受測基板上係置放有多數個已知電阻值之電阻元件(S210); 使多數個已知電阻值之電阻元件藉由線路而形成多數個第一待測迴路(S230);提供定電流至多數個第一待測迴路之一者以形成第一導電迴路,於定電流下量測第一導電迴路的跨壓,而得到第一驅動電壓(S250);將多數個已知電阻值之電阻元件置換為多數個電子元件(S270);使多數個電子元件藉由線路而形成多數個第二待測迴路(S290);提供定電流至多數個第二待測迴路之一者以形成第二導電迴路,於定電流下量測電壓,而得到第二驅動電壓(S310);以及計算相對應的第一驅動電壓與第二驅動電壓之間的電壓差(S330)。 From the above-mentioned preferred embodiments and application methods of the present invention, another electronic component measurement method can be summarized, which can be implemented by the above-mentioned electronic component measurement equipment (Z2~Z4). As shown in Figure 25, the method includes the following steps: Provide the subject Test substrate, on which a plurality of resistive elements with known resistance values are placed (S210); Make a plurality of resistive elements with known resistance values pass through lines to form a plurality of first circuits to be measured (S230); provide a constant current to one of the plurality of first circuits to be measured to form a first conductive circuit. Measure the cross-voltage of the first conductive loop to obtain the first driving voltage (S250); replace a plurality of resistive elements with known resistance values with a plurality of electronic components (S270); enable the plurality of electronic components to be connected through the circuit Form a plurality of second circuits to be measured (S290); provide a constant current to one of the plurality of second circuits to be measured to form a second conductive circuit, measure the voltage under the constant current, and obtain the second driving voltage (S310) ; and calculate the voltage difference between the corresponding first driving voltage and the second driving voltage (S330).
在一實施例中,上述之電子元件為發光二極體,且發光二極體的製造方法包括上述之電子元件量測方法。 In one embodiment, the above-mentioned electronic component is a light-emitting diode, and the manufacturing method of the light-emitting diode includes the above-mentioned electronic component measurement method.
本發明所提供的一種電子元件量測設備,其能通過“第二承載平台用於承載一受測基板,受測基板包括多數個待測電子元件”、“第一承載平台設置在第二承載平台的上方,第一承載平台包括一探針基板以及設置在探針基板上的多數個探針對”以及“光學量測元件設置在第二承載平台的下方,以用於對多數個待測電子元件進行光學檢測”的技術方案,以使得待測電子元件能藉由通過相對應的探針對的電力而產生光源,並且待測電子元件所產生的光源能透過一光學量測元件以進行光學檢測,藉此以提升待測電子元件的光學檢測效率。 The invention provides an electronic component measuring equipment, which can use "a second carrying platform for carrying a tested substrate, and the tested substrate includes a plurality of electronic components to be tested", and "the first carrying platform is arranged on the second carrying platform." Above the platform, the first carrying platform includes a probe substrate and a plurality of probe pairs arranged on the probe substrate, and the optical measuring element is arranged below the second carrying platform for measuring a plurality of electrons to be measured. The technical solution of "Optical detection of components" enables the electronic component to be tested to generate a light source by passing the electricity through the corresponding probe pair, and the light source generated by the electronic component to be tested can pass through an optical measuring element for optical detection. , thereby improving the optical detection efficiency of the electronic components to be tested.
本發明所提供的一種電子元件量測設備,其能通過“多數個探針對設置在探針基板上”以及“每一探針對包括一第一導電接觸腳以及一第二導電接觸腳”的技術方案,以使得當每一探針對的第一導電接觸腳與第二導電接觸腳分別電性接觸相對應的一待測電子元件的一第一導電接點與一第 二導電接點時,待測電子元件能藉由通過相對應的探針對的電力而產生光源,並且待測電子元件所產生的光源能透過一光學量測元件以進行光學檢測,藉此以提升待測電子元件的光學檢測效率。 The invention provides an electronic component measuring equipment, which can adopt the technology of "a plurality of probe pairs are arranged on the probe substrate" and "each probe pair includes a first conductive contact pin and a second conductive contact pin" The solution is such that when the first conductive contact pin and the second conductive contact pin of each probe pair respectively electrically contact a first conductive contact and a first conductive contact of a corresponding electronic component to be tested, When there are two conductive contacts, the electronic component under test can generate a light source by passing the electricity through the corresponding probe pair, and the light source generated by the electronic component under test can pass through an optical measuring element for optical detection, thereby improving the Optical detection efficiency of electronic components under test.
本發明所提供的一種電子元件量測設備,其能藉由通過量測單一線路與不同電子元件所建立的導電迴路之跨壓,快速計算出與單一線路建立導電迴路的待測電子元件之驅動電壓,提升待測電子元件的電性檢測效率。 The invention provides an electronic component measuring device that can quickly calculate the drive of the electronic component under test that establishes a conductive loop with a single line by measuring the cross-voltage of a conductive loop established by a single line and different electronic components. voltage to improve the electrical detection efficiency of electronic components under test.
以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。 The contents disclosed above are only preferred and feasible embodiments of the present invention, and do not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.
Z1:電子元件量測設備 Z1: Electronic component measuring equipment
M1:第二承載平台 M1: Second carrying platform
M2:第一承載平台 M2: the first carrying platform
M3:光學量測元件 M3: Optical measuring element
S:受測基板 S: Tested substrate
C:待測電子元件 C: Electronic components to be tested
C101:第一導電接點 C101: First conductive contact
C102:第二導電接點 C102: Second conductive contact
1:探針基板 1: Probe substrate
2:探針對 2: Probe pair
21:第一導電接觸腳 21: First conductive contact pin
211:第一柱體 211:First cylinder
212:第一導電層 212: First conductive layer
22:第二導電接觸腳 22: Second conductive contact pin
221:第二柱體 221:Second cylinder
222:第二導電層 222: Second conductive layer
P:導電電極組 P: Conductive electrode group
P1:第一導電電極 P1: first conductive electrode
P2:第二導電電極 P2: Second conductive electrode
L:光源 L: light source
Claims (13)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111163068.8A CN114295948B (en) | 2020-10-07 | 2021-09-30 | Electronic component measuring apparatus, electronic component measuring method, and manufacturing method of light emitting diode |
US17/494,864 US11488876B2 (en) | 2020-10-07 | 2021-10-06 | Electronic component measuring equipment, electronic component measuring method, and LED manufacturing method |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109134667 | 2020-10-07 | ||
TW109134667 | 2020-10-07 | ||
TW109145015 | 2020-12-18 | ||
TW109145015 | 2020-12-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202215067A TW202215067A (en) | 2022-04-16 |
TWI821750B true TWI821750B (en) | 2023-11-11 |
Family
ID=89720657
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110135673A TWI821750B (en) | 2020-10-07 | 2021-09-24 | Electronic component measuring equipment, electronic component measuring method, and led manufacturing method |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI821750B (en) |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200301360A (en) * | 2001-12-03 | 2003-07-01 | Advantest Corp | Contact structure and production method thereof and probe contact assembly using same |
TW200304545A (en) * | 2002-03-22 | 2003-10-01 | Electro Scient Ind Inc | Test probe alignment apparatus |
TW200706880A (en) * | 2005-03-31 | 2007-02-16 | Octec Inc | Microstructure probe card, and microstructure inspecting device, method, and computer program |
US20150192617A1 (en) * | 2014-01-03 | 2015-07-09 | National Cheng Kung University | Multi-electrode conductive probe, manufacturing method of insulating trenches and measurement method using multi-electrode conductive probe |
US20160356750A1 (en) * | 2015-06-05 | 2016-12-08 | Semilab SDI LLC | Measuring semiconductor doping using constant surface potential corona charging |
US20170108547A1 (en) * | 2015-10-20 | 2017-04-20 | International Business Machines Corporation | Wafer probe alignment |
US20170299653A9 (en) * | 2012-04-12 | 2017-10-19 | Larry Ross | Precision probe positioning for at-speed integrated circuit testing using through silicon in-circuit logic analysis |
TW201841278A (en) * | 2017-01-23 | 2018-11-16 | 美商特索羅科學有限公司 | Light emitting diode (led) test apparatus and method of manufacture |
US20190187198A1 (en) * | 2017-12-18 | 2019-06-20 | Rydberg Technologies Inc. | Atom-Based Electromagnetic Field Sensing Element and Measurement System |
US20200025835A1 (en) * | 2017-08-21 | 2020-01-23 | Linh M. Pham | Chopped Bias Magnetic Field Solid-State Spin Sensor For Low Frequency Measurements Of Physical Quantities |
-
2021
- 2021-09-24 TW TW110135673A patent/TWI821750B/en active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200301360A (en) * | 2001-12-03 | 2003-07-01 | Advantest Corp | Contact structure and production method thereof and probe contact assembly using same |
TW200304545A (en) * | 2002-03-22 | 2003-10-01 | Electro Scient Ind Inc | Test probe alignment apparatus |
TW200706880A (en) * | 2005-03-31 | 2007-02-16 | Octec Inc | Microstructure probe card, and microstructure inspecting device, method, and computer program |
US20170299653A9 (en) * | 2012-04-12 | 2017-10-19 | Larry Ross | Precision probe positioning for at-speed integrated circuit testing using through silicon in-circuit logic analysis |
US20150192617A1 (en) * | 2014-01-03 | 2015-07-09 | National Cheng Kung University | Multi-electrode conductive probe, manufacturing method of insulating trenches and measurement method using multi-electrode conductive probe |
US20160356750A1 (en) * | 2015-06-05 | 2016-12-08 | Semilab SDI LLC | Measuring semiconductor doping using constant surface potential corona charging |
US20170108547A1 (en) * | 2015-10-20 | 2017-04-20 | International Business Machines Corporation | Wafer probe alignment |
TW201841278A (en) * | 2017-01-23 | 2018-11-16 | 美商特索羅科學有限公司 | Light emitting diode (led) test apparatus and method of manufacture |
US20200025835A1 (en) * | 2017-08-21 | 2020-01-23 | Linh M. Pham | Chopped Bias Magnetic Field Solid-State Spin Sensor For Low Frequency Measurements Of Physical Quantities |
US20190187198A1 (en) * | 2017-12-18 | 2019-06-20 | Rydberg Technologies Inc. | Atom-Based Electromagnetic Field Sensing Element and Measurement System |
Also Published As
Publication number | Publication date |
---|---|
TW202215067A (en) | 2022-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7105856B1 (en) | Test key having a chain circuit and a kelvin structure | |
KR100374433B1 (en) | Device for detecting wire defects in the wiring board | |
CN109686828B (en) | Micro LED and array substrate, detection equipment and detection method thereof | |
TWI793179B (en) | Resistance measuring device, substrate inspection device, and resistance measuring method | |
KR102386932B1 (en) | Led probe device and transport deveice | |
KR20060119719A (en) | Method and apparatus for testing electrical characteristics of object under test | |
TWI821750B (en) | Electronic component measuring equipment, electronic component measuring method, and led manufacturing method | |
CN103837809B (en) | The IC layout of test MOSFET matching and method of testing | |
KR20140131762A (en) | Substrate of electronic device, electronic device including the same and measuring method of resistance at contact portion | |
CN114295948B (en) | Electronic component measuring apparatus, electronic component measuring method, and manufacturing method of light emitting diode | |
TWM255509U (en) | Testing board component of semiconductor device | |
KR101039049B1 (en) | Chip scale package for detecting open/short of elcectrode pettern using noncontact inspection method and the inspection apparatus thereof | |
KR102559566B1 (en) | Led probe device and transport deveice | |
US8519388B2 (en) | Embedded structure for passivation integrity testing | |
TW202138830A (en) | Inspection apparatus and inspection method capable of facilitating determination of the electrostatic capacitance of wiring | |
US6541992B2 (en) | Apparatus and method for continuity testing of pogo pins in a probe | |
JPH07169806A (en) | Method of inspecting semiconductor integrated circuit | |
JP2020128881A (en) | Short circuit inspection system, and short circuit inspection method | |
JP2004259750A (en) | Wiring board, connecting wiring board and its inspecting method, electronic device and its manufacturing method, electronic module, and electronic equipment | |
JP4810741B2 (en) | Self-scanning light emitting device | |
TWI735915B (en) | A wafer probe card integrated with a light source facing a device under test side and method of manufacturing | |
WO2021261802A1 (en) | Optical inspection apparatus | |
JP2007123430A (en) | Semiconductor wafer and semiconductor inspecting method | |
CN115485572A (en) | Inspection device and inspection method | |
KR20210135037A (en) | Test module for a semiconductor package |