CN112635339B - Micro-LED test circuit, device and method - Google Patents
Micro-LED test circuit, device and method Download PDFInfo
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- CN112635339B CN112635339B CN201910906483.4A CN201910906483A CN112635339B CN 112635339 B CN112635339 B CN 112635339B CN 201910906483 A CN201910906483 A CN 201910906483A CN 112635339 B CN112635339 B CN 112635339B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06705—Apparatus for holding or moving single probes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
Abstract
The invention provides a test circuit, a device and a method of a Micro-LED, wherein the test circuit comprises: a first metal lead, a second metal lead, a first test electrode and a second test electrode; the first metal lead is connected with the anode of the LED of the wafer and extends to the outer side of the epitaxial wafer or the light-emitting region; the second metal lead is connected with the cathode of the LED of the wafer and extends to the outer side of the epitaxial wafer or the light-emitting area; the first test electrode is positioned on the extension section of the first metal lead; the second test electrode is positioned on the extension section of the second metal lead; and when the first test electrode and the second test electrode are respectively electrically connected with external test equipment, carrying out batch test on the LEDs of the wafer. The wafer LED testing device and the wafer LED testing method can solve the technical problem that the wafer LED testing efficiency is low, realize batch testing of the wafer LEDs, and remarkably improve the testing efficiency.
Description
Technical Field
The invention relates to a testing circuit, a testing device and a testing method of a Micro-LED (light-emitting diode), and belongs to the technical field of organic light-emitting display.
Background
The Micro-LED display technology has the advantages of high brightness, low power consumption, high resolution, high color saturation, and longer service life, and is therefore applied to more and more display panels. In the Micro-LED manufacturing process, the performance of the LED needs to be tested.
The existing testing method is to cover a glass cover plate on the top surface of an LED light source to fix the LED light source, and then to adopt a double probe to carry out electric connection point testing with an electrode of the LED.
However, the above testing method is inefficient and is not suitable for testing millions of LED chips on a Micro-LED wafer.
Disclosure of Invention
The invention provides a test circuit, a test device and a test method of Micro-LEDs, which are used for solving the problem of low test efficiency of wafer LEDs, realizing batch test of the wafer LEDs and remarkably improving the test efficiency.
In a first aspect, the present invention provides a Micro-LED testing circuit, comprising: a first metal lead, a second metal lead, a first test electrode and a second test electrode; the first metal lead is connected with the anode of the LED of the wafer and extends to the outer side of the epitaxial wafer or the light-emitting region; the second metal lead is connected with the cathode of the LED of the wafer and extends to the outer side of the epitaxial wafer or the light-emitting region; the first test electrode is located on an extended section of the first metal lead; the second test electrode is located on the extended section of the second metal lead; and when the first testing electrode and the second testing electrode are respectively and electrically connected with external testing equipment, carrying out batch testing on the LEDs of the wafer.
As described above, optionally, the extension segment of the first metal lead refers to a segment located outside the epitaxial wafer or the light-emitting region of the wafer; the extending section of the second metal lead is a section located outside the epitaxial wafer or the light-emitting region of the wafer.
In the circuit described above, optionally, the first metal lead and the second metal lead divide the LED of the wafer into two or more test areas, and each test area is electrically connected to an external test circuit through the first test electrode and the second test electrode; and when the first test electrode and the second test electrode are respectively electrically connected with external test equipment, carrying out batch test on the LEDs in the corresponding test areas.
In the circuit as described above, optionally, each of the test regions has the same area.
In the circuit as described above, optionally, the first metal lead and the second metal lead are directly disposed on the wafer, or disposed on the test backplane corresponding to the wafer.
In a second aspect, the present invention provides a testing apparatus for Micro-LEDs, comprising: the test circuit comprises a wafer, a carrying platform, an image collector, a power supply and a computer, wherein the wafer comprises the test circuit in the first aspect; the wafer is arranged on the carrying platform, and the power supply is in contact connection with the first testing electrode and the second testing electrode through probes and is used for providing testing signals for the LEDs of the wafer; the image collector is used for collecting a test image corresponding to the wafer in the test process and sending the test image to a computer; and the computer acquires the test result of the LED of the wafer according to the test image.
The device as described above, optionally, the tip of the probe is provided with a spring, or the probe is an cantilever beam probe.
In a third aspect, the present invention further provides a method for testing Micro-LEDs, the method comprising:
manufacturing a first test electrode and a second test electrode at the edge of an epitaxial wafer or at the outer side of a light-emitting area of the wafer;
drawing a wiring diagram by adopting a photoetching mode;
making a first metal lead and a second metal lead according to the wiring pattern; the first metal lead is connected with an anode of an LED of a wafer and extends to the outer side of an epitaxial wafer or a light-emitting region of the wafer; the second metal lead is connected with the cathode of the LED of the wafer;
and electrically connecting the first test electrode and the second test electrode with external test equipment respectively, and carrying out batch test on the LEDs of the wafer.
The method as described above, optionally, said lithographically patterning the wiring pattern includes:
cleaning the wafer;
spin-coating a photoresist on the wafer;
and exposing the wiring pattern by adopting an exposure and development process.
The method as described above, optionally, said fabricating a first metal lead and a second metal lead according to said wiring pattern, comprising:
manufacturing the first metal lead and the second metal lead by a Sputter process according to the wiring pattern;
and removing the photoresist.
The method as described above, optionally, after performing batch testing on the LEDs of the wafer, further includes:
and removing the first metal lead and the second metal lead on the wafer through alkali solution at normal temperature.
According to the testing circuit, the testing device and the testing method of the Micro-LED, a first metal lead electrically connected with an LED anode and a second metal lead electrically connected with an LED cathode are arranged on a wafer, and the first metal lead and the second metal lead extend to the edge of a wafer epitaxial wafer or the outer side of a light emitting area; the LEDs on the wafer are then batch tested via a first test electrode located on the extension of the first metal lead and a second test electrode located on the extension of the second metal lead. Therefore, the technical problem that the LED testing efficiency of the wafer is low is solved, batch testing of the wafer LEDs is realized, and the testing efficiency is remarkably improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention. Moreover, the drawings and the description are not intended to limit the scope of the inventive concept in any way, but rather to illustrate it by those skilled in the art with reference to specific embodiments.
FIG. 1 is a schematic structural diagram of one embodiment of a test circuit of a Micro-LED in an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another embodiment of a test circuit of the Micro-LED in the embodiment of the invention;
FIG. 3 is a schematic wiring structure diagram of another embodiment of a test circuit of the Micro-LED in the embodiment of the invention;
FIG. 4 is a schematic structural diagram of an embodiment of a testing device for Micro-LEDs in the embodiment of the present invention;
FIG. 5 is a schematic flow chart illustrating one embodiment of a method for testing Micro-LEDs in an embodiment of the present invention;
FIG. 6 is a schematic flowchart illustrating another embodiment of a method for testing a Micro-LED according to an embodiment of the present invention.
Description of reference numerals:
100-a test circuit;
111-a first metal lead;
112-a second metal lead;
113-a first test electrode;
114-a second test electrode;
120-LED；
200-a test device;
210-a stage;
220-an image collector;
230-a power supply;
240-computer;
250-a wafer;
260-Probe.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
Example one
FIG. 1 is a schematic structural diagram of an embodiment of a Micro-LED test circuit in an embodiment of the present invention. As shown in fig. 1, the present embodiment provides a test circuit 100, which includes a first metal lead 111, a second metal lead 112, a first test electrode 113, and a second test electrode 114; the first metal lead 111 is connected to the anode of the LED 120 of the wafer and extends to the outer side of the epitaxial wafer or the light-emitting region; the second metal lead 112 is connected to the cathode of the LED 120 of the wafer and extends to the outer side of the epitaxial wafer or the light-emitting region; the first test electrode 113 is located on the extended section of the first metal lead 111; the second test electrode 114 is located on the extended section of the second metal lead 112; when the first and second test electrodes 113 and 114 are electrically connected to an external test device, respectively, the LEDs 120 of the wafer are batch tested.
In this embodiment, the electrodes of the LEDs are extended to the outer side of the epitaxial wafer or the light-emitting region of the wafer through the metal leads, and then the test electrodes are disposed on the extended sections of the metal leads, so that the test electrodes can be used to transmit test signals to batches of LEDs, thereby realizing batch testing of the LEDs on the wafer and improving the test efficiency.
In an alternative embodiment, the extended segment of the first metal lead 111 refers to a segment located outside the epitaxial wafer or the light emitting region of the wafer; the extended section of the second metal lead 112 refers to a section located outside the epitaxial wafer or the light emitting region of the wafer.
In this embodiment, can draw the contact position of test circuit probe to the border of epitaxial wafer, the outside of luminous region to avoid the electrode on the LED by the risk of probe test in-process pressure destruction. Each LED on the wafer can be loaded with an electric signal, and the problem that Photoluminescence (PL for short) cannot judge the quality of the electrode is solved.
In another alternative embodiment, the first metal leads 111 and the second metal leads 112 are directly disposed on the wafer or disposed on the test backplane corresponding to the wafer.
In this embodiment, the test circuit is fabricated on the test backplane corresponding to the wafer, so that the fabrication process can be reduced, and the reuse rate of the test circuit can be increased.
In the embodiment, a first metal lead electrically connected with an LED anode and a second metal lead electrically connected with an LED cathode are arranged on a wafer, and the first metal lead and the second metal lead extend to the edge of a wafer epitaxial wafer or the outer side of a light-emitting region; the LEDs on the wafer are then batch tested via a first test electrode located on the extension of the first metal lead and a second test electrode located on the extension of the second metal lead. Therefore, the technical problem that the LED testing efficiency of the wafer is low is solved, batch testing of the wafer LEDs is realized, and the testing efficiency is remarkably improved.
Example two
FIG. 2 is a schematic structural diagram of another embodiment of a Micro-LED test circuit in the embodiment of the present invention. As shown in fig. 2, the present embodiment provides a test circuit 100, which includes a first metal lead 111, a second metal lead 112, a first test electrode 113, and a second test electrode 114; the first metal lead 111 is connected to the anode of the LED 120 of the wafer and extends to the outer side of the epitaxial wafer or the light-emitting region; the second metal lead 112 is connected to the cathode of the LED 120 of the wafer and extends to the outer side of the epitaxial wafer or the light-emitting region; the first test electrode 113 is located on the extended section of the first metal lead 111; the second test electrode 114 is located on the extended section of the second metal lead 112; the first metal lead 111 and the second metal lead 112 divide the LED 120 of the wafer into two or more test regions 130, and each test region 130 is electrically connected to an external test circuit through the first test electrode 113 and the second test electrode 114; when the first and second test electrodes 113 and 114 are electrically connected to an external test device, respectively, the LEDs 120 in the corresponding test areas 130 are batch tested.
In the embodiment, a first metal lead electrically connected with an LED anode and a second metal lead electrically connected with an LED cathode are arranged on a wafer, and the first metal lead and the second metal lead extend to the edge of a wafer epitaxial wafer or the outer side of a light-emitting region; and then performing batch test of the LEDs on the wafer in a subarea mode through the first test electrode positioned on the extension section of the first metal lead and the second test electrode positioned on the extension section of the second metal lead.
FIG. 3 is a schematic wiring diagram of another embodiment of a test circuit for Micro-LEDs in an embodiment of the present invention; as shown in fig. 3, the first metal lead 111 is wired to divide the wafer into two areas, i.e., a left semicircle and a right semicircle, and the first test electrode 113 is disposed on the left and right arc-shaped traces respectively; the second metal lead 112 is wired to divide the wafer into two regions of an upper semicircle and a lower semicircle, and second test electrodes 114 are respectively disposed at the lead ends of the upper semicircle and the lower semicircle.
In the wiring mode in the embodiment, the LED of the wafer can be divided into four test areas, and each test area is electrically connected with an external test circuit through a first test electrode and a second test electrode; and when the first test electrode and the second test electrode are respectively and electrically connected with external test equipment, carrying out batch test on the LEDs in the corresponding test areas.
It should be noted that, the present embodiment does not limit the specific dividing manner of the test areas on the wafer, and for example, the wafer may be divided into two test areas or more than two test areas. Wherein the area of each test area may be the same or different.
In this embodiment, the area of each test region is set to be the same, which facilitates the manufacture of the test electrodes, for example, the test electrodes are uniformly disposed at the edge of the wafer epitaxial wafer.
In this embodiment, a person skilled in the art can set the areas of the test areas to be different, for example, reduce the area of the test area where circuit problems easily occur, and increase the area of the test area where circuit problems do not easily occur, so that the number of times of tests can be reduced and the test efficiency can be improved on the premise of ensuring the test accuracy.
In another alternative embodiment, the first metal leads 111 and the second metal leads 112 are directly disposed on the wafer or disposed on the test backplane corresponding to the wafer.
In this embodiment, the test circuit is fabricated on the test backplane corresponding to the wafer, which can reduce the fabrication process and increase the reuse rate of the test circuit.
In the embodiment, a first metal lead electrically connected with an LED anode and a second metal lead electrically connected with an LED cathode are arranged on a wafer, and the first metal lead and the second metal lead extend to the edge of a wafer epitaxial wafer or the outer side of a light-emitting region; the LEDs on the wafer are then batch tested via a first test electrode located on the extension of the first metal lead and a second test electrode located on the extension of the second metal lead. Therefore, the technical problem that the LED testing efficiency of the wafer is low is solved, batch testing of the wafer LEDs is realized, and the testing efficiency is remarkably improved.
EXAMPLE III
FIG. 4 is a schematic structural diagram of an embodiment of a Micro-LED testing device in an embodiment of the present invention. As shown in fig. 4, the present embodiment provides a testing apparatus 200, including: a stage 210, an image acquirer 220, a power supply 230, and a computer 240; the wafer 250 is mounted on the stage 210, and the power supply 230 is in contact connection with the first test electrode and the second test electrode through the probe 260, and is used for providing a test signal to the LED of the wafer 250; the image collector 220 is configured to collect a test image corresponding to the wafer 250 in the test process, and send the test image to the computer 240; the computer 240 obtains the test results of the LEDs of the wafer 250 according to the test images.
In this embodiment, the wafer 250 is provided with the test circuit shown in fig. 1 and fig. 2, and during testing, the wafer 250 is placed on the stage 210, and the probe connected to the power supply 230 or the test equipment is contacted with the first test electrode and the second test electrode on the wafer 250; then, the image collector 220 collects a test image of the wafer 250 in the test process, and sends the test image to the computer 240; the computer 240 obtains the test results of the LEDs of the wafer 250 according to the test images. Therefore, automatic batch test of the wafers can be realized, and the detection efficiency is improved.
In an alternative embodiment, the end of the probe is provided with a spring, or the probe is a cantilever beam probe.
In this embodiment, the spring is arranged at the end of the probe or the cantilever beam type probe is adopted, so that good contact between the probe and the first test electrode and good contact between the probe and the second test electrode can be ensured, and a test result is more accurate.
In this embodiment, a carrier, an image collector, a power supply and a computer are arranged; the wafer is arranged on the carrying platform, and the power supply is in contact connection with the first testing electrode and the second testing electrode through the probes and used for providing testing signals for the LEDs of the wafer; the image collector is used for collecting a test image corresponding to the wafer in the test process and sending the test image to the computer; and the computer acquires the test result of the LED of the wafer according to the test image. Therefore, automatic batch test of the wafers can be realized, and the detection efficiency is improved.
Example four
FIG. 5 is a schematic flow chart illustrating an embodiment of a method for testing a Micro-LED according to the present invention. As shown in fig. 5, the method in this embodiment may include:
s301, manufacturing a first test electrode and a second test electrode at the edge of an epitaxial wafer or outside a light-emitting region of the wafer.
In the embodiment, the testing electrode in the edge area can be simultaneously manufactured in the manufacturing process of the LED epitaxial P/N contact electrode Cr/Pt/Au.
And S302, drawing a wiring diagram by adopting a photoetching mode.
In this embodiment, the wafer may be cleaned first; spin-coating a photoresist on the wafer; and exposing the wiring pattern by using an exposure and development process.
Specifically, after the Micro-LED epitaxial wafer process is finished, cleaning is carried out, then, the thickness of a spin-coated photoresist (positive photoresist) is about 15um, and finally, an exposure and development process is adopted to expose a graph needing wiring.
S303, manufacturing a first metal lead and a second metal lead according to the wiring diagram.
In this embodiment, the first metal lead is connected to an anode of the LED of the wafer and extends to an epitaxial wafer of the wafer or an outer side of the light emitting region; the second metal lead is connected with the cathode of the LED of the wafer, and the second metal lead extends to the outer side of the epitaxial wafer or the light-emitting region.
Alternatively, the first metal lead and the second metal lead may be made of aluminum wires. Specifically, the first metal lead and the second metal lead can be manufactured by a Sputter process, and the thickness of the metal leads is about 5 um. And then removing the photoresist by using a lift-off process.
S304, the first testing electrode and the second testing electrode are respectively and electrically connected with external testing equipment, and batch testing is conducted on the LEDs of the wafer.
In this embodiment, the probe of the external test device is electrically connected to the first test electrode and the second test electrode, respectively, and when a test signal is applied, batch testing of the LEDs of the wafer can be realized.
Specifically, a wafer including test circuits of four test areas is taken as an example for detailed description. First, a wafer with a test circuit is placed on a stage and fixed. Then moving the probe to be respectively arranged on the first test electrode and the second test electrode; because the end of the probe is provided with a spring device, the sufficient contact between the needle tip and the electrode can be ensured. The wafer on the carrying platform is controlled to move stably according to the X axis, the Y axis and the Z axis in a mechanical mode, so that the image collector can be aligned to a test area. After the image collector is aligned with the test area, switching on a power supply and applying a test signal to a test circuit of the wafer; the test signal includes: rated forward current, reverse voltage, ESD signal testing, etc. Monitoring and outputting a test result of each LED core particle and a brightness map of the LED at the corresponding position through an image collector; and finally, sending the image obtained by the test to a computer, and determining the test result of the wafer LED.
It should be noted that, in addition to the above test signals, the test equipment also has a fiber detection function, the diameter of the optical fiber can be controlled to the diameter of the light emitting area of a single LED, and the light emitting spectrum information of the LED is tested by a spectrometer.
In this embodiment, a first test electrode and a second test electrode are fabricated at the edge of an epitaxial wafer or outside a light-emitting region of a wafer; drawing a wiring diagram by adopting a photoetching mode; making a first metal lead and a second metal lead according to the wiring pattern; the first metal lead is connected with the anode of the LED of the wafer and extends to the outer side of the epitaxial wafer or the light-emitting region; the second metal lead is connected with the cathode of the LED of the wafer and extends to the outer side of the epitaxial wafer or the light-emitting region of the wafer; the first test electrode and the second test electrode are electrically connected to an external test device, respectively. Therefore, batch testing of the LEDs of the wafer can be realized, and the testing efficiency is remarkably improved.
EXAMPLE five
FIG. 6 is a schematic flow chart illustrating another embodiment of a method for testing a Micro-LED according to an embodiment of the present invention. As shown in fig. 6, the method in this embodiment may include:
s401, manufacturing a first test electrode and a second test electrode at the edge of an epitaxial wafer or outside a light-emitting region of the wafer.
And S402, drawing a wiring diagram by adopting a photoetching mode.
S403, manufacturing a first metal lead and a second metal lead according to the wiring diagram; the first metal lead is connected with the anode of the LED of the wafer and extends to the outer side of the epitaxial wafer or the light-emitting region; the second metal lead is connected with the cathode of the LED of the wafer, and the second metal lead extends to the outer side of the epitaxial wafer or the light-emitting region.
S404, electrically connecting the first testing electrode and the second testing electrode with external testing equipment respectively, and carrying out batch testing on the LEDs of the wafer.
For specific implementation processes and implementation principles of steps S401 to S404 in this embodiment, refer to relevant descriptions in steps S301 to S304 shown in fig. 5, and are not described herein again.
And S405, removing the first metal lead and the second metal lead on the wafer through alkali solution at normal temperature.
In this embodiment, after the test of one test area is finished, the probe position is moved smoothly, and the test of the remaining test areas is continuously performed until the test of the whole wafer is finished. After the whole wafer test is finished, taking down the probes, and sequentially turning off the power switches; and finally, removing the first metal lead and the second metal lead by using an alkali solution at normal temperature. The embodiment can remove the metal lead wire for testing on the premise of not influencing the LED, thereby keeping the surface of the wafer clean and avoiding the influence of the metal lead wire on the LED circuit.
In this embodiment, a first metal lead electrically connected to an LED anode and a second metal lead electrically connected to an LED cathode are disposed on a wafer, and the first metal lead and the second metal lead extend to an edge of a wafer epitaxial wafer or an outer side of a light-emitting region; and then performing batch test on the LEDs on the wafer through the first test electrode positioned on the extension section of the first metal lead and the second test electrode positioned on the extension section of the second metal lead. Therefore, the technical problem that the LED testing efficiency of the wafer is low is solved, batch testing of the wafer LEDs is realized, and the testing efficiency is remarkably improved.
In addition, in the present invention, unless otherwise explicitly specified or limited, the terms "connected," "stacked," and the like are to be construed broadly, e.g., as being fixedly connected, detachably connected, or integrated; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (13)
1. A test circuit for Micro-LEDs, comprising: a first metal lead, a second metal lead, a first test electrode and a second test electrode; the first metal lead is connected with an anode of an LED of the wafer and extends to the outer side of an epitaxial wafer or a light-emitting region of the wafer; the second metal lead is connected with the cathode of the LED of the wafer and extends to the outer side of the epitaxial wafer or the light-emitting region; the first test electrode is located on an extension section of the first metal lead; the second test electrode is located on the extended section of the second metal lead; when the first test electrode and the second test electrode are respectively electrically connected with external test equipment, carrying out batch test on the LEDs of the wafer;
the first metal lead and the second metal lead divide the LEDs of the wafer into two or more test areas.
2. The test circuit of claim 1, wherein each test region is electrically connected to an external test circuit through the first test electrode and the second test electrode; and when the first test electrode and the second test electrode are respectively and electrically connected with external test equipment, carrying out batch test on the LEDs in the corresponding test areas.
3. The test circuit of claim 2, wherein the area of each of the test regions is different.
4. The test circuit of claim 3, wherein the area of each of the test regions that is prone to circuit problems is less than the area of each of the test regions that is not prone to circuit problems.
5. The test circuit of claim 2, wherein the area of each of the test regions is the same.
6. The test circuit of claim 1, wherein the first metal lead is routed in a manner that divides the wafer into two areas, a left semicircle and a right semicircle, and the first test electrode is disposed on each of the left and right arc-shaped traces; and/or the wafer is divided into an upper semicircle region and a lower semicircle region by the wiring mode of the second metal lead, and the second test electrodes are respectively arranged at the tail ends of the leads of the upper semicircle region and the lower semicircle region.
7. The test circuit of any of claims 1-6, wherein the first metal lead and the second metal lead are routed directly on a wafer or on a corresponding test backplane of the wafer.
8. A Micro-LED testing device is characterized by comprising: a wafer comprising a test circuit as claimed in claims 1-7, a stage, an image collector, a power supply, and a computer; the wafer is arranged on the carrying platform, and the power supply is in contact connection with the first testing electrode and the second testing electrode through probes and is used for providing testing signals for the LEDs of the wafer; the image collector is used for collecting a test image corresponding to the wafer in the test process and sending the test image to the computer; and the computer acquires the test result of the LED of the wafer according to the test image.
9. The device of claim 8, wherein the probe is provided with a spring at its tip or is a cantilever beam probe.
10. A method for testing a Micro-LED is characterized by comprising the following steps:
manufacturing a first test electrode and a second test electrode at the edge of an epitaxial wafer or at the outer side of a light-emitting area of the wafer;
drawing a wiring diagram by adopting a photoetching mode;
making a first metal lead and a second metal lead according to the wiring pattern; the first metal lead is connected with an anode of an LED of a wafer and extends to the outer side of an epitaxial wafer or a light-emitting region of the wafer; the second metal lead is connected with the cathode of the LED of the wafer; the first metal lead and the second metal lead divide the LEDs of the wafer into two or more test areas;
and electrically connecting the first test electrode and the second test electrode with external test equipment respectively, and carrying out batch test on the LEDs of the wafer.
11. The method of claim 10, wherein said photolithographically patterning comprises:
cleaning the wafer;
spin-coating a photoresist on the wafer;
and exposing the wiring pattern by adopting an exposure and development process.
12. The method as claimed in claim 10, wherein said fabricating a first metal lead and a second metal lead according to said wiring pattern comprises:
manufacturing the first metal lead and the second metal lead by a Sputter process according to the wiring pattern;
and removing the photoresist.
13. The method of any of claims 10-12, further comprising, after batch testing the LEDs of the wafer:
and removing the first metal lead and the second metal lead on the wafer through alkali solution at normal temperature.
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| CN112635339B true CN112635339B (en) | 2023-02-28 |
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| CN113281629B (en) * | 2021-04-10 | 2022-07-01 | 深圳市永而佳实业有限公司 | Light emitting diode array detection device and using method thereof |
| CN115356560B (en) * | 2022-08-12 | 2023-06-16 | 福建兆元光电有限公司 | Testing method of integrated Micro LED |
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